Abstract: A photochemical vapor phase reaction apparatus and a method of causing a photochemical vapor phase reaction are described. The apparatus comprises a vacuum chamber, a substrate holder provided in the vacuum chamber for holding a substrate to be treated by a vapor phase reaction, a gas feeding system for supplying a reactive gas to the reaction space, a light source housed in a light source room for emitting light rays through a light window, an optical system for condensing and projecting the light rays emitted from the light source onto the substrate on the holder. By this configuration, the intensity of light is relatively low at the light window and relatively high at the surface of a substrate to be treated.

Abstract: An in-line type chemical vapor deposition apparatus having an etching device for cleaning at least substrate holders, which is provided downstream of the substrate unloading station in which the processed substrates are removed from the substrate holders at atmosphere pressure. The etching device comprises a plasma etching means in which the substrate holders are positioned on an anode side or a dry-etching means in which the substrate holders are positioned on a cathode side, thereby reducing the down time of the apparatus without any influence of an exfoliation of an adhered film from the substrate holders or other portions.

Abstract: In supersonic molecular beam etching, the reactivity of the etchant gas and substrate surface is improved by creating etchant gas molecules with high internal energies through chemical reactions of precursor molecules, forming clusters of etchant gas molecules in a reaction chamber, expanding the etchant gas molecules and clusters of etchant gas molecules through a nozzle into a vacuum, and directing the molecules and clusters of molecules onto a substrate. Translational energy of the molecules and clusters of molecules can be improved by seeding with inert gas molecules. The process provides improved controllability, surface purity, etch selectivity and anisotropy. Etchant molecules may also be expanded directly (without reaction in a chamber) to produce clusters whose translational energy can be increased through expansion with a seeding gas.

Abstract: A multi-switch processing methodology and a multi-channel time-division plasma chopping device (10) for in-situ plasma-assisted semiconductor wafer processing associated with a plasma and/or photochemical processing equipment. The device (10) comprises a main transfer channel (72) associated with the processing reactor for transferring process gas and activated plasma mixtures into the reactor. A plurality of gas discharge channels (18, 22, 26, and 30) associate with the main transfer channel (72) for independently directing various gases and activated plasma combinations to main transfer channel (72). Process excitation sources (16, 20, 24 and 28) associate with at least one of said gas discharge or activation channels to independently and selectively activate process gases and to control gas activation and flow from the discharge channels to the main transfer channel (72).

Abstract: A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.

Abstract: A wafer processing cluster tool, having one or more load-locks, is provided with one or more batch preheating modules that receive wafers only from the cluster tool transport module at the internal vacuum pressure of the machine. The loading, unloading, handling and processing of wafers in the machine can occur while other wafers are being preheated. The preheat module has a vertically moveable rack and is loaded with various sized batches of wafers with no vacant positions between them. Wafer shaped shields may occupy positions adjacent top and bottom wafers to cause them to heat the same as other wafers in the rack. Infrared lamps positioned outside of quartz windows heat wafers in the preheat module. The rack may rotate to improve heating uniformity. Temperature sensors, such as pyrometers, that do not contact the wafers being preheated, measure temperature for control of the heating of the lamps.

Abstract: In a surface treatment apparatus, an organic substance is removed through ashing by ultraviolet rays and ozone at atmospheric pressure. A transparent partition plate is provided in closely spaced, opposed relation to a material to be treated, and at least one gas outlet is open to that surface of the partition plate opposed to the material to be treated. With this arrangement, the gas can be directly collected via the gas outlet during the treatment, and the end point of the organic substance removal treatment can be detected by analyzing the collected gas.

Abstract: Provided is a method and apparatus for in-situ measuring filament temperature and the thickness of a film deposited on a substrate disposed within a hot-filament chemical vapor deposition reactor. In accordance with the invention, white light which is emitted directly from the filament and that reflects from the top and bottom surfaces of a deposited film are collected and converted to monochromatic light through the use of simple narrow-banned interference filters operative over specific, yet different, optical banned widths. This information is thereafter used to mathematically calculate the filament temperature, film thickness and growth rate of the deposited film.

Abstract: An in-situ deep-ultraviolet light generation module (126) for photon-assisted processing of semiconductor wafers (44) comprises a process environment space (152) for photochemical processing applications. Process gas injection space (182) receives reactive process gases and injects them into process environment space (152). Plasma fill space (124) receives a plasma (120) and may direct plasma (120) away from or into the process environment space (152) according to the presence or absence of control gas (160) flow. Control gas space (174) and flow/pressure switch space (154) receive control gas (160) to selectively permit deep-ultraviolet photons or plasma to reach process environment space (152) and interact with wafer (44) for photo-enhanced or plasma-enhanced wafer processing.

Abstract: A photo-assisted chemical vapor deposition system includes a reaction chamber, a susceptor in the reaction chamber supporting a wafer, a source for introducing reactant gas into the reaction chamber through an inlet port, and a cover positioned in sealed relationship to the housing and partially bounding the reaction chamber, the cover including a plurality of elongated light pipe openings each having a length comparable to the thickness of a boundary layer of the reactant gas and a diameter-to-length ratio small enough to maintain one-dimensional purge gas flow through the light pipe openings. A plurality of transparent windows are disposed in sealed relationship with the cover and bound an outer end of each of the light pipe openings. Ultraviolet light is introduced through the light pipe openings, which also provide a thick gas layer through which reactant species of the reactant gas must diffuse to reach the window surface.

Abstract: A chemical vapor deposition apparatus having a gas purifier for purifying a raw-material gas such as AsH.sub.3 or PH.sub.3 gas, the gas purifier being constructed as the combination of an organometal and a molecular sieve. Gas of AsH.sub.3, PH.sub.3 or the like is introduced into the organometal whereby impurities such as H.sub.2 O or O.sub.2 contained in the raw-material gas (AsH.sub.3, PH.sub.3, etc) are removed. Further, organometal vapor occured from gas purifier is removed by the molecular sieve.

Abstract: An argon (Ar.sup.+) laser has a resonator. A reaction chamber is integrally formed in the resonator. A voltage is applied to electrodes, which discharge electricity to excite argon atoms in the resonator to produce a laser beam. The laser beam is continuously oscillated between total reflection mirrors disposed at opposite ends of the resonator. A substrate is disposed in the reaction chamber into which a material gas is introduced. The material gas absorbs the laser beam, to decompose and deposit as a thin film over the substrate.

Abstract: A photo CVD apparatus includes a reaction chamber, a light source for radiating light to the inside of the chamber through a light window, and a pair of electrodes disposed in the chamber for glow discharge, one of the electrodes being located on the light window. After deposition by photo CVD, a light window for transmission of UV light is cleaned by plasma etching by virtue of glow discharge taking place between the electrodes. The light source and the electrodes for plasma etching share one power supply for supplying high frequency electric power.

Abstract: A remote plasma enhanced CVD apparatus and method for growing semiconductor layers on a substrate, wherein a intermediate feed gas, which does not itself contain constituent elements to be deposited, is first activated in an activation region to produce plural reactive species of the feed gas. These reactive species are then spatially filtered to remove selected of the reactive species, leaving only other, typically metastable, species which are then mixed with a carrier gas including constituent elements to be deposited on the substrate. During this mixing, the selected spatially filtered reactive species of the feed gas chemically interacts, i.e., partially dissociates and activates, in the gas phase, the carrier gas, with the process variables being selected so that there is no back-diffusion of gases or reactive species into the feed gas activation region. The dissociated and activated carrier gas along with the surviving reactive species of the feed gas then flows to the substrate.

Abstract: A method and apparatus for manufacturing a semiconductor device having a thin layer of material formed on a semiconductor substrate with a much improved interface between them are disclosed. A silicon substrate is heated up to a temperature around 300.degree. C. in the presence of ozone gas under exposure to UV light. Through this process, organic contaminants that might be present on the surface of the silicon substrate are dissipated by oxidation, and a thin oxide film is formed on the substrate surface on the other. The silicon substrate with the thin oxide film coated thereon is then heated up to temperatures of 200.degree.-700.degree. C. in the presence of HCl gas under illumination to UV light to strip the oxide film off the substrate surface, thereby exposing the cleaned substrate surface. Finally, HCl cleaned surface of the silicon substrate is coated with a thin layer of material such as monocrystalline silicon without exposing the cleaned substrate surface.

Abstract: An apparatus for performing laser-assisted deposition of material on a target surface includes a reaction chamber enclosure having a window therein. The reaction chamber is partially evacuated, and a reactive gas is introduced into the reaction chamber enclosure. A laser directs a laser beam into the interior of the reaction chamber enclosure through the window, and the laser beam causes the reactive gas to react to produce an ionized reaction product gas. Optionally, a catalyst is provided within the reaction chamber enclosure to catalyze this reaction. The ionized gaseous reaction product flows from the interior of the reaction chamber enclosure toward a target surface through a nozzle opening in a wall of the reaction chamber enclosure. A voltage is applied between an electrode in the interior of the reaction chamber enclosure and the target surface to accelerate the ionized reaction product out the nozzle and toward the target surface.

Abstract: An inert ultraviolet light reaction chamber is provided with a flow of liquid on its light transmitting wall surface. The fluid prevents the build up of light blocking deposits, controls the temperature, and filters out undesired portions of the spectrum.

Abstract: An apparatus for coating substrates by photolytic dissociation or decomposition of a coating material includes a reactor vessel. A UV radiation source and the substrate to be coated are both disposed in the reactor vessel.

Abstract: A method and apparatus for manufacturing a magnetic recording medium at high efficiency. A flexible web is passed around first and second cooling cans. The web is reversed between the two cans so that the same surface of the web is directed to the outside on both cans. A single evaporation source produces an evaporated stream of magnetic film forming material which impinges on the web as it passes around both cans, thereby to form two films of the evaporated magnetic material on the same surface of the web.

Abstract: The present invention discloses methods and apparatus for depositing thin films of complex (compound) materials, including ferroelectrics, superconductors, and materials with high dielectric constants through a technique which is hereby entitled photo-enhanced chemical vapor deposition and activation (PECVDA). The technique involves the use of multiple heating sources including a resistive heat bias heater, a tuned optical source (UV or laser) and a source (halogen lamps or microwave sources) for applying high energy, rapid thermal pulses in a precise time sequence.

Abstract: A thin film vacuum evaporation device having a reaction gas supplier for locally supplying a reaction gas to the evaporating point on a target. The device includes a reaction chamber that can be kept under vacuum with a light transmitting window disposed therein allowing the passage of a laser beam on the target. Also, a differential pressure chamber may be provided between the target and the light transmitting window, and a gas introducing section may be connected to the differential pressure chamber. Thus, the vapor generated by the target is prevented from adhering to the light transmitting window, and the light transmitting window can be kept clean.

Abstract: An apparatus for producing semiconductor devices. A first automatic carrying system operates for taking from a lead frame tray a lead frame which mounts thereon semiconductor chips and for setting the lead frame on the suscepter. A thin film forming device operates for forming an insulating film on a surface of the lead frame disposed on the suscepter. A second automatic carrying system operates for taking from the suscepter the lead frame formed with the insulating film and for setting the lead frame into another lead frame tray. A transferring device operates for transferring the lead frame disposed on the suscepter from the first automatic carrying system through the thin film forming device to the second automatic carrying system.

Abstract: A laser sputtering apparatus includes a vacuum chamber, a laser for radiating a laser beam, a vacuum sealing window arranged at the chamber for introducing the beam into the chamber, a film transporting device for transporting a film while the film is passing near the window and a substrate holder arranged opposite to the window with the film therebetween for holding a substrate. The film has high laser transmission and a surface over which material for a thin film to be formed on the substrate is deposited. The device transports the film while the surface of the film is opposed to the substrate. The laser beam sputters the material on the thin film onto the substrate.

Abstract: Light from a Q-switched laser passes through a metal-containing gas and through a field oxide of an integrated circuit structure. The laser light is preferentially absorbed by an underlying substrate. The substrate, but not the oxide, is heated above a threshold temperature that allows rapid chemical vapor deposition of metal through a relatively deep via hole in the oxide. The oxide has low thermal conductivity. The upper portions of the via hole walls are not heated enough to allow deposition of metal thereon. The via hole therefore can be uniformly filled by deposition of the metal on the bottom of the via hole, with no obstruction or shadowing from buildup of deposited metal on the upper wall portions of the via hole.

Abstract: A remote plasma enhanced CVD apparatus and method for growing semiconductor layers on a substrate, wherein an intermediate feed gas, which does not itself contain constituent elements to be deposited, is first activated in an activation region to produce plural reactive species of the feed gas. These reactive species are then spatially filtered to remove selected of the reactive species, leaving only other, typically metastable, species which are then mixed with a carrier gas including constituent elements to be deposited on the substrate. During this mixing, the selected spatially filtered reactive species of the feed gas chemically interacts, i.e., partially dissociates and activates, in the gas phase, the carrier gas, with the process variables being selected so that there is no back-diffusion of gases or reactive species into the feed gas activation region. The dissociated and activated carrier gas along with the surviving reactive species of the feed gas then flows to the substrate.

Abstract: A plasma process and apparatus are provided for coating one or more planar substrates by a plasma-induced chemical vapor deposition in which plasma electrodes provide a plurality of overlapping plasma columns which extend over the entire surface of the substrate to be coated. A plurality of plasma electrodes are fixed in planes above, between, or below the substrates, and the individual plasma electrodes can be separately controlled. With a plasma pulse/CVD process, the spacing and angle between the substrates can be varied to alter the thickness of the coating. The process can be used for coating large area, planar vitreous bodies with multilayer optical coatings.

Abstract: A substrate is exposed to a gas of reactive material and an oxidizing gas. The oxidizing gas includes an ozone gas. A laser light beam is applied to the substrate through the reactive material gas and the oxidizing gas. The laser light beam activates the oxidizing gas. The activated oxidizing gas reacts with the reactive material gas to form an oxide deposited on the substrate.

Abstract: A reaction chamber for performing a chemical vapor deposition process wherein the window through which the light must pass is prevented from becoming clouded. The chamber is divided by baffles into a reactant zone, a buffer zone, and a window zone, and the momentum flux densities of the gases flowing in the respective zones are about matched. Additionally, discontinuities are provided on the walls of the reactor to impede diffusion of the reactant gas towards the window.

Abstract: A distributed electron cyclotron resonance remote plasma processing apparatus and method which includes generating electron cyclotron resonance activated species in plasma formation regions distributed peripherally around, remote from the wafer processing chamber and in fluid communication with the main transfer chamber; containing the activated species using a microwave gas discharge and a magnetic field in the plasma formation regions; introducing the plasma streams to the main transfer chamber; creating a magnetic mirror in the main transfer chamber using a magnetic field; and introducing the species to the process chamber and to a face of the workpiece. Such an apparatus could use multiple energy/excitation sources.

Abstract: Precursor (9) is atomized by being ionized (11,12) and is then vaporized (14) prior to deposition. The ionized vapor is controlled by electrodes (2,15) to control its flow and/or its deposition on a substrate.

Abstract: In an apparatus for forming a deposited film on a substrate by the hybrid excitation chemical vapor deposition method, said apparatus comprising a substantially enclosed reaction vessel having means for holding said substrate thereon, a plasma generating means and means for irradiating light through a light introducing window provided with said reaction vessel to the surface of said substrate in said reaction vessel; the improvement that at least part of the circumferential side wall of said reaction vessel is hermetically constituted by an insulating member having an external cathode electrode member on the outer surface thereof, said external cathode electrode member being electrically connected to a high frequency power source, an internal electrode member to serve as the anode is installed in said reaction vessel at a position opposite to said external cathode electrode member, said internal electrode member being electrically grounded, said means for holding the substrate is positioned below said interna

Abstract: A reactor for laser-assisted CVD has a cylindrical symmetry and includes a high-speed horizontal rotating disk susceptor. The reactor of the invention provides for radiation, preferably UV laser radiation, to be introduced into the reactor radially along an axis. The radiation is constrained to occupy a thin region of space at or immediately adjacent to substrate surfaces upon which deposition is to occur. Preferably the radiation is provided as an annular beam that is reflected uniformly by a conical reflector to provide a relatively thin and uniform sheet of UV radiation that is approximately 0.1 mm to approximately 1.0 mm thick. In addition the reactor provides for Hg vapor, or any other gaseous reactant, to be introduced into the reactor at a same point on the axis as the laser radiation, separately from other reactants, and from a source coaxially disposed and external to the reactor.

Abstract: A thin film forming apparatus of the present invention comprises: a reaction chamber for receiving therein a substrate and a thin film forming gas; an ultraviolet laser beam oscillator for generating an ultraviolet laser beam for causing dissociation of the thin film forming gas to thereby form a thin film over the surface of the substrate; and a plasma generator for generating ions for controlling growth of a thin film.

Abstract: An improved semiconductor processing is desclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

Abstract: An apparatus for depositing metal thin film on predetermined portions of an underlayer of a substrate by a chemical deposition method with good selectivity, good reproducibility and high deposition rate. Hydrogen atoms are prevented from adhering to portions of the substrate not to be deposited with a metal using a light source for heating only the substrate while cooling other portions exposed to starting material gases or a special gas flow controlling plate or shading plate.

Abstract: An apparatus for forming a high quality film at high speed includes a wafer susceptor provided wiht a vacuum exhaust system, a stock gas supply system, and a heating mechanism for directly heating the susceptor. A ceramic filter means is disposed in opposite juxtaposed face to face position relative to the wafer susceptor for blowing stock gas in a uniform manner against a wafer. Means for activating the stock gas is provided to thereby increase the probability of adsorption of the stock gas on the wafer surface.

Abstract: A photochemical vapor reaction apparatus wherein a silicon film is deposited by photo-CVD. The photo-CVD is implemented by irradiating a reactive gas with ultraviolet rays which are emitted from a mercury lamp. The emission of the mercury lamp becomes continuous when the frequency of input power is 20 KHz or higher. By virtue of such a continuous light, the deposition is implemented uniformly and a close-packed and hard film can be formed.

Abstract: The present invention relates to an apparatus to form a thin film on a specimen in a chamber by introducing electromagnetic waves into the chamber through a dielectric provided on a window of the chamber and activating the material gas in the chamber, and the forming apparatus according to the present invention has such a construction that an electrode connected to a high-frequency generating source is mounted near the dielectric. Consequently, when a high frequency is applied to the electrode, self-biases are generated on the inner surface of the dielectric (the surface on the side of the specimen), the plus ions in the chamber being attracted to the inner surface to strike thereon, and the sputtering being caused on the inner surface by the incidence energy. As a result, due to the sputtering effect, the generation of a pile of films on the inner surface of the dielectric can be prevented, while in the case where films are already piled on the inner surface of the dielectric these films can be removed.

Abstract: An equipment for manufacturing semiconductor devices has: a reaction chamber in which a substrate to be processed is placed; means for evacuating the reaction chamber; means for introducing a reaction gas into the reaction chamber; means for applying polarized light to the surface of the substrate for the purpose of depositing a thin film on the surface of the substrate using a photochemical reaction between the light and the reaction gas; and means for adjusting the direction of polarization of the light so as to be substantially perpendicular to the longitudinal axis of a stepped circuit pattern present on the surface of the substrate for the purpose of flattening the circuit pattern.

Abstract: An apparatus for treating a sample comprises an ion source for irradiating a designated area of the sample with a focused ion beam, a vessel for storing compound to be vaporized, a heater surrounding the vessel for heating the compound to vaporize the same inside the vessel to produce compound vapor, and a nozzle for directing the compound vapor in the form of a vapor stream onto the designated area of the sample being irradiated with the focused ion beam. A valve is disposed along the fluid communication path between the vessel and the nozzle and has a closed state for blocking the flow of compound vapor through the nozzle and an open state for permitting the flow of compound vapor through the nozzle. The apparatus can be used to form pattern films on substrates, to repair defects in photo-masks and X-ray masks, and to cut or connect wiring in integrated circuits.

Abstract: A semiconductor producing apparatus for use in photochemical vapor deposition for forming various types of film on a substrate at a low temperature as a first reaction gas excited and decomposed by a laser beam and a second reaction gas converted into a plasma state by a plasma generator react with each other in a reaction chamber in which a substrate is mounted. Two kinds of electrodes are provided in upper and lower positions in the reaction chamber opposing each other. The upper electrode is connected to a high-frequency power source and the lower electrode is used as a common electrode on which the substrate is mounted to control film forming speed, while an ultraviolet light source for irradiating the interior of the reaction chamber with ultraviolet rays is provided to obtain a dense film.

Abstract: An apparatus for controlling a flow of fine particles is provided which comprises a convergent-divergent nozzle in a flow path of the fine particles. The nozzle may be operated under an optimum expansion condition, and the differential coefficient of the streamline at the channel inside the nozzle varies continuously and is equal to zero at a throat portion of the nozzle.

Abstract: A processing apparatus and method utilizing a single process chamber for deposition of silicon nitride with a silicon source, a remote plasma including a nitrogen source, additional ultraviolet energy coupled into the process chamber to provide additional molecular excitation of the silicon source.

Abstract: In a photo-CVD apparatus, a holder on which an article is held is provided in a main chamber. The holder is moved in a predetermined direction to coincide a predetermined point of the article with a imaging point of light radiated from a light source, so that a thin film is grown on the predetermined point of the article. A process chamber is defined on the holder of the main chamber is accordance with the separation of a seal wall. Process gas is supplied to the process chamber for the growing of the thin film on the article, while inert gas is supplied to the remaining portion of the main chamber. A gas pressure of the main chamber is slightly greater than that of the process chamber, so that the process gas is prevented from flowing to the main chamber. For this structure, a size of the process chamber can be small, so that a consumption of process gas is decreased.

Abstract: A reactor for producing single crystal metal carbide, nitride, or carbonitride whiskers, where the metal is one or more of Ti, Zr, Hf, Nb, Ta or W. The reactor walls and inner fixtures provide the substrate surfaces, greatly increasing the surface area available for whisker growth. Preferred substrate materials are nickel or high nickel alloy coated with TiC or TiN, or, for carbide or carbonitride whiskers, nickel impregnated graphite. An alternate embodiment provides a collecting chamber and vibrating means to mechanically detach whiskers, allowing for more efficient batch, or continuous operation.

Abstract: A photo chemical reaction apparatus comprises a vacuum container partitioned into a reaction chamber and a carrier chamber by use of partition board. The partition board has an opening into which a carrier tray can be detachably inserted so as to cause the rection chamber to be hermetically sealed. The carrier tray has a substrate holder opposite to a light-penetrating window. A reaction gas flows between this window and a substrate to be processed mounted on the substrate holder.

Abstract: A thin film manufacturing system comprises a reaction vessel with a window that is transparent to ultraviolet radiation; a means of exhausting gas from the reaction vessel to a reduced pressure condition, a means of introducing a gas into the reaction vessel to form a thin film, a source of ultraviolet radiation that activates the gas, and slits provided at a predetermined interval on the window that is transparent to ultraviolet radiation.

Abstract: A coating hood for applying uniform protective coatings to glass containers, while minimizing the escape of noxious fumes from the hood to the ambient atmosphere, which includes a pair of spaced side walls having inclined end surfaces adjacent the entrance and exit ends to reduce the amount of stagnant ambient air thereat; coating air supply slots in the side walls for supplying process air to the containers; and finish air supply slots positioned at a height above the coating air supply slots for supplying coating free air.

Abstract: A plasma operation apparatus utilizes plasma generated by a microwave cooperative with a magnetic field as to perform a surface operation on a specimen such as semiconductor substrates, such as, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.

Abstract: In an apparatus for the coating of bands on both sides with zinc in a vacuum, consisting of a housing (32) surrounding a coating chamber (28) and a winding chamber (45), a removable cover disposed on at least one side of the housing (32) for the hermetic closure of the coating chamber and winding chamber (28, 45), a winding system with rotatably mounted pulley rolls, guide rolls and tension rolls (5 to 17), with coating rolls (18, 53) and a take-up roll and supply roll (35', 37') and with coating sources (19, 54) disposed in the coating chamber, a tube (33) leading into the winding chamber (45) is provided for the introduction of a gas which prevents any sticking of the coated band (50) on the take-up roll (35').