Abstract: A semiconductor substrate processing chamber is disclosed generally comprising a chamber body that has a semiconductor substrate support assembly disposed in the chamber body. A lid assembly is movably coupled to the chamber body via a dual pivot hinge assembly. The hinge assembly provides two pivot points that minimize the abrasion and pinching of an o-ring disposed between the lid assembly and the chamber body upon closing of the lid assembly.

Abstract: So as to provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on the surface and serving to set the temperature of the substrate, and a chuck mechanism to fix the substrate in contact to a plurality of the projections by chucking the substrate toward the direction of the temperature control plate.

Abstract: Deposited dielectric layers for a semiconductor device are typically formed in a chemical vapor deposition. Often a hydrogen by-product is formed. Especially in a plasma enhanced chemical vapor deposition process, the hydrogen by-product can form free radicals that are introduced into the dielectric layers. The hydrogen free radicals can affect the stability of the threshold and breakdown voltage of MOSFET transistors. Deuterium introduced into the CVD chamber competes to enter the dielectric layer with the hydrogen. The deuterium prevents some of the hydrogen free radicals from entering the dielectric layer and thus increases MOSFET reliability.

Abstract: The invention relates to a chamber for chemical vapor deposition, consisting of an inner quartz tube (1) which is enclosed by a shorter, outer quartz tube. Each end of the inner quartz tube (1) is surrounded by a first flange (3), which presents a groove (3′) which extends in the longitudinal direction of the inner quartz tube (1) and in which in each case the face end of the inner quartz tube (1) is positioned. A seal (5′) is arranged between the first flange (3) and the outside of the inner quartz tube (1). On both first flanges (3) a second flange (4) is positioned in the direction of the tube center which comprises a peripheral rim (4′) for fixing the face end of the shorter, outer quartz tube (2) and contacts both the outside of the inner quartz tube (1) and the outside of the shorter, outer quartz tube (2). A seal (5) is positioned between the second flange (4) and the outside of the shorter, outer quartz tube (2).

Abstract: An object of the present invention is to stably supply a treatment chamber with a treatment gas with a prescribed composition. A spin on dielectric (SOD) system includes a film treatment apparatus of the present invention which comprises, for forming an interlayer insulating film, a treatment chamber for placing a wafer W, a first mass flow controller for NH3 gas, a second mass flow controller for N2 gas with a prescribed water vapor, thereby supplying the treatment chamber with a gas of a prescribed composition.

Abstract: A semiconductor processing system includes a chamber adapted to process a wafer, the chamber having an opening to facilitate access to the interior of the chamber. The system has a lid coupled to the chamber opening, the lid having an open position and a closed position. An actuator is connected to the lid to move the lid between the closed position and the open position. The system may include a floating pivot coupled to the lid and the actuator to align the lid with the opening when the lid closes.

Abstract: A deposition apparatus and shower head are provided. The shower head preferably includes a plurality of plates having gas paths formed therein. A cooling system is arranged in a lower plate of the shower head and includes a plurality of independent inner cooling lines configured to connect coolant inlets to coolant outlets. A separating device is also disclosed herein. The separating device preferably separates a heater stage from a chamber body to thereby separate a processing chamber of the deposition apparatus from a dead volume located beneath the heater stage. Various other improvements are also provided to improve the efficiency of a deposition process, and, in particular, an ALD process.

Abstract: Disclosed are dual chambered bubbler designs for use with solid organometallic source material for chemical vapor phase deposition systems, and a method for transporting a carrier gas saturated with source material for delivery into such systems.

Abstract: A single-substrate-heat-processing method performs a reformation process for a tantalum oxide film on a wafer and a crystallization process for this film in this order. In the reformation process and crystallization process, a heater is set at preset temperatures substantially equal to each other, and a pressure in a process chamber is set at first and second process pressures different from each other. A density of a gas present between a support surface and the wafer is changed by using the pressure in the process chamber as a parameter, and thus a heat transfer rate between the support surface and wafer is changed, thereby setting a wafer temperature at first and second process temperatures different from each other.

Abstract: Target processing temperatures for a wafer and offset values are tabulated and stored in a temperature controller in advance. When a target processing temperature is changed, a hot plate temperature corresponding to the target processing temperature for the wafer is calculated based on the offset value in the table. Based on the calculated value, a heater controller controls a heater to change the hot plate temperature. Thereby, in a substrate heat processing apparatus for performing heat processing at different temperatures, an offset value corresponding to each temperature is automatically changed, whereby the substrate can be heated at an appropriate temperature.

Abstract: An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices is disclosed. The apparatus includes an enclosure containing a plurality of apertures. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A chamber is formed within the enclosure. Spherical shaped devices move through the input conduit where they are preheated by a furnace. The preheated devices then move into the chamber where chemical precursors are added. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.

Abstract: The present invention is directed to apparatus and methods for wet processing electronic components using ozonated process fluids. In the apparatus and methods of the present invention, the ozonated process fluid is provided by an apparatus having a vessel for containing a stock fluid; an ozone source connected to the vessel for supplying ozone to the vessel; a fluid source in fluid communication with the vessel for supplying a fluid to the vessel; and a back-pressure regulator connected with an exhaust for regulating pressure within the vessel.

Abstract: There are disclosed an apparatus and a method for chemical vapor deposition for a semiconductor film and the like, wherein a feed gas is supplied in a horizontal tubular reactor in the direction parallel to a substrate; a forcing gas is supplied therein in the direction perpendicular to the substrate; and the flow rate per unit area of the forcing gas which is supplied from a forcing gas introduction portion into the reactor is made lower in the central portion of the forcing gas introduction portion than in the peripheral portion thereof, or lower in the middle of a feed gas passageway than at both the end portions of the passageway.

Abstract: A method and apparatus for depositing a protective film on a data recording disk, including the steps of depositing a magnetic film layer as a data recording layer on a surface of a substrate while the substrate is at a magnetic film deposition temperature; heating the substrate with the magnetic film layer thereon to a protective film deposition temperature; and depositing a protective film on the magnetic film layer while the substrate is at the protective film deposition layer; wherein the protective film deposition temperature is higher than the magnetic film deposition temperature.

Abstract: A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III-V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method. The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.

Abstract: An apparatus for processing a workpiece in a micro-environment is set forth. The apparatus includes a rotor motor and a workpiece housing. The workpiece housing is connected to be rotated by the rotor motor. The workpiece housing further defines a substantially closed processing chamber therein in which one or more processing fluids are distributed across at least one face of the workpiece by centripetal acceleration generated during rotation of the housing.

Abstract: A steel blade for turbomachinery, for example, a vane or blade of stainless steel for a steam turbine, has its working surface smoothed, for example, by tumble polishing, to a smoothness of about 0.25 microns Ra or less. Then the smoothed surface is subjected to plasma nitriding to harden the surface to a value of, for example, about 1000 on the Vickers hardness scale. The hardened nitrided layer in the steel can be 25 to 100 microns thick. The plasma nitriding process does not affect the smoothness of the area of surface being nitrided, and the resultant surface hardness preserves smoothness of the surface while the blade is in use.

Abstract: The cathode electrode for plasma sources of a vacuum coating device, preferably for the application of coating layers on optical substrates, consists at least partially of a material with preferably as wide a band gap as possible of at least 3 eV between its energy bands. In this case, the wide band gap material of the cathode electrode doped for an optimal primary and secondary electron emission and can consist of diamond doped with nitrogen (N) or sulfur (S) or diamond with a codoping of boron (B) and nitrogen (N) or N-doped crystalline 6H—SiC and 4H—SiC (silicon carbide), or GaN, AlN and AlGaInN alloys doped with Zn, Si or Zn+Si, as well as BN, CN, BCN and other n-doped nitrides, borides and oxides.

Abstract: An improved vacuum plasma etching device for plasma etching semiconductor wafers that have a photo-resist pattern. The improved plasma etching device has a reaction chamber in which the plasma etching is performed during a process cycle, an entrance vacuum loadlock for holding the next semiconductor wafer to be plasma etched, an exit vacuum loadlock for transporting the semiconductor wafers out of the reaction chamber after the plasma etching process, and a source of ultraviolet light. Exposing the semiconductor wafer to the ultraviolet light cures the photo-resist patterns, thereby improving CD dispersion, enhancing pattern transfer, and preventing photo-resist reticulation. Curing the photo-resist patterns while the semiconductor wafer is being held during the process cycle in the entrance vacuum loadlock, increases efficiency and productivity.

Abstract: A thermal CVD apparatus is provided with a substrate heating source which includes a reaction chamber and an electromagnetic wave generator connecting to the reaction chamber. Silicon substrates are placed in the reaction chamber. The electromagnetic wave generator supplies electromagnetic waves to the reaction chamber to form a thin film on the front face of each silicon substrate. Alternatively, the thermal CVD apparatus may be provided with a cavity resonator for placing the substrates therein and the electromagnetic wave generator may be connected to the cavity resonator.

Abstract: A method and apparatus is provided for preparing an optical information medium comprising a disk-shaped substrate having a center hole, an information recording layer thereon, and a resin-based light-transmitting layer thereon by which recording/reading laser beam is transmitted. The apparatus includes a rotating table (2) for holding and rotating the substrate (100) having the information recording layer borne thereon, a plug means (3) including a disk member (31) for closing the center hole (101) and an integral support shaft (32), and a nozzle (4) for feeding a coating fluid containing the resin to the outer periphery of the support shaft (32), wherein the coating fluid is flowed from the support shaft to the disk member, then over the substrate, thereby forming the light-transmitting layer having a minimized thickness variation.

Abstract: The plasma processing apparatus includes an electrostatic adhesion electrode for having a wafer electrostatically adhere to it, a helium gas introducing element for introducing a helium gas in a pressure-controlled manner between the wafer and the electrostatic adhesion electrode when the wafer adheres electrostatically, and a rear surface pressure setting element for setting the pressure of the helium gas to a first pressure during the preliminary adhering step and for setting the pressure of the helium gas to a second pressure higher than the first pressure in the steady state after plasma ignition.

Abstract: An apparatus for forming a high dielectric oxide film includes a controllable atomic oxygen source and a vaporized precursor source. A deposition chamber for receiving the atomic oxygen from the atomic oxygen source and vaporized precursor from the vaporized precursor source is used for deposition of the high dielectric oxide film on a surface of a structure located therein. The apparatus further includes a detection mechanism for detecting a characteristic of the deposition of the high dielectric oxide film on the surface of the structure. The controllable atomic oxygen source is controlled as a function of the detected characteristic.

Abstract: In a plasma CVD apparatus including a reaction chamber and a susceptor to form a thin film on a semiconductor substrate, a pretreatment step is conducted to form a surface layer on the surface of the susceptor so that the surface layer can prevent the semiconductor substrate from electrostatically adhering to the surface of the susceptor. The pretreatment step includes steps of introducing into the reaction chamber a gas containing, e.g., the same gas as the gas for use in a film-forming treatment, and forming a surface layer on the susceptor surface by a CVD process.

Abstract: Systems and methods of achieving optimal light transmittance through a gas and light transmittance region. This invention is directed at the application of specific activated carbon based materials for the protection of imaging lenses which are targeting optimal transmittance at specific wavelengths. Specifically, it outlines a use of a specific type of carbon to obtain improved/constant transmittance at a specific wavelength or range of wavelengths. In addition, it also presents the use of a mixture of activated carbon types in order to obtain improved/constant transmissions over a broad range of wavelengths.

Abstract: A method and apparatus for the production of solar cells by directly spraying metal powder for both lines and layers on the front and back sides of a silicon wafer using focused plasma spray technique for making contacts on solar cells.

Abstract: There is provided a deposition system (1) for yielding substantially uniform deposition of an evaporant material onto a substrate. The deposition system (1) comprises: a source (10) for generating a coherent energy beam; a substantially planar target (60) containing the evaporant material and disposed in spaced relation to the substrate; a focusing element (30) optically coupled to the source for focusing the coherent energy beam onto the target (60); and, an actuator (40) coupled to the focusing element (30) for reversibly translating the focusing element (30) along a scanning path directed substantially parallel to a target plane defined by the target (60). The focused coherent energy beam defines an impingement spot (14) on the target (60). The impingement spot (14) is displaced responsive to the translation of the focusing element (30) along the scanning path. The focus of the coherent energy beam on the target (60) thus remains substantially preserved.

Abstract: A film forming apparatus includes a silicon film forming vacuum chamber for forming a crystalline silicon film on a substrate; a film forming device provided for the vacuum chamber for forming a pre-film of the crystalline silicon film on a target surface of the substrate; and an energy beam irradiating device provided for the vacuum chamber for irradiating the pre-film with an energy beam for crystallizing the pre-film. This film forming apparatus produce a crystalline silicon film having a good quality as a semiconductor film for a TFT or the like with good productivity.

Abstract: An apparatus for forming a ultra-thin film of a semiconductor device includes: a reactive chamber consisting of an upper container and a lower container junctioned by an O-ring; a suscepter installed inside the reactive chamber for supporting a target substrate on which a ultra-thin film is to be formed; at least two gas supply pipes for respectively supplying at least two material gases into the reactive chamber to form a ultra-thin film on the substrate; gas supply controllers respectively installed at the gas supply pipes to repeatedly supply the material gases into the chamber; a gas outlet for discharging the gas from the chamber; remote plasma generators installed outside the reactive chamber and connected to the gas supply pipes for activating the material gases supplied through the gas supply pipes; and a temperature controller for controlling the temperature inside the chamber in a heat exchange method, the temperature controller being installed to surround the chamber.

Abstract: A plasma processing apparatus has a vacuum vessel, a processing chamber arranged in the vacuum vessel and supplied with gas, a support electrode arranged in the processing chamber to support an object to be processed, a radio frequency providing unit for supplying a radio frequency in UHF or VHF band, and a magnetic field generating unit for generating a magnetic field in the processing chamber, wherein the radio frequency providing unit includes an antenna having a groove or step formed in its surface opposing the process object, whereby plasma of high density and high uniformity can be generated in a wide parameter region.

Abstract: A part of the outer wall of the processing chamber supplied with an active gas for an intended processing forms a protruding section extending out from the outer wall into the air. An incident side window through which laser light is guided is mounted to the protruding portion. A baffle is provided inside the protruding portion for intercepting unnecessary portion of light guided in the processing chamber even if irregularly reflecting light arises, when laser light is guided into the window. An antireflection coating is coated on the air side surface of the window. A purge gas inlet port for blowing out a purge gas along the inside surface of the window is formed in the protruding portion.

Abstract: In connection with a unit (3) for irradiating electron beams to a curable coating on a filament (1) for curing the coating, x-ray shielding tubes (6 and 7) are disposed upstream of an inlet (3a) and downstream of an outlet (3b) of the irradiating unit (3), respectively, for shielding secondary x-rays resulting from the electron beam irradiation. Secondary x-rays emanating from electron beams irradiated to the curable coating on the filament can be shielded in a simple way. The invention helps establish a safe working environment without detracting from process efficiency.

Abstract: semiconductor device, including the step of supplying an oxidizing gas and a nitriding gas onto one main surface of a semiconductor substrate while heating the substrate so as to oxynitride the surface region of the substrate, wherein the supplying step is performed such that the gaseous phase above the main surface of the substrate forms a first region having a substantially uniform temperature in a direction perpendicular to the main surface of the substrate and a second region interposed between the first region and the substrate and having a temperature gradient in a direction perpendicular to the main surface of the substrate such that the temperature is elevated toward the substrate, and the distance from the main surface of the substrate to the interface between the first and second regions is set at 9.5 cm or less.

Abstract: A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.

Abstract: A method of processing a substrate 25 comprises placing the substrate 25 in a process zone and introducing process gas into the process zone through a gas distributor 35 through which energized gas may be introduced into the process zone. The method also comprises detecting radiation transmitted through the gas distributor 25, which may comprise a monocrystalline material portion. In another version, the gas distributor 25 comprises a thermal expansion isolator.

Abstract: A method and apparatus for improved metal oxide chemical vapor deposition on a substrate surface where the application boundary layer is reduced and where the uniformity of the application boundary layer is greatly enhanced in a reactor. Primary and secondary sonic or other disturbance sources are introduced to the interior chamber or an oscillating chuck is incorporated to influence the boundary layer thickness and uniformity.

Abstract: A system that employs thermophoresis to protect lithographic surfaces from particle deposition and operates in an environment where the pressure is substantially constant and can be sub-atmospheric. The system (thermophoretic pellicle) comprises an enclosure that surrounds a lithographic component whose surface is being protected from particle deposition. The enclosure is provided with means for introducing a flow of gas into the chamber and at least one aperture that provides for access to the lithographic surface for the entry and exit of a beam of radiation, for example, and further controls gas flow into a surrounding low pressure environment such that a higher pressure is maintained within the enclosure and over the surface being protected.

Abstract: In a cleaning method and a cleaning apparatus of a silicon substrate, after wet cleaning or etching of the substrate having a silicon surface is carried out, and during or after a pure water rinse of the substrate, an oxide film with a thickness of 10 to 30 Å is formed on the silicon surface by rinsing the substrate by pure water added with an oxidizer, and then the substrate is dried. Since drying is carried out after the oxide film is formed on the silicon surface, the occurrence of a water mark can be prevented.

Abstract: An end point window assembly in an etching apparatus includes an end point bracket having an inducing tube connected to an optic cable. The end point bracket is connected to a process chamber of the etching apparatus and a main window is provided to cut off a gap between the optic cable and the process chamber. The end point window assembly further includes at least a spare window insertion groove between the main window and the process chamber about the inner circumference of the inducing tube. A spare window guiding groove corresponding in location to the spare window insertion groove is connected to and tunnelled through an inside of a body of the end point bracket, a spare window is displacably movable between the spare window insertion groove and the window guiding groove wherein the spare quartz window selectively closes the inducing tube, and a moving mechanism for transferring the spare window along the spare window guiding groove in accordance with an extent of contamination of the spare window.

Abstract: An ozone-processing apparatus for a semiconductor process system includes an airtight process chamber and a lamp chamber, which are partitioned by a window for transmitting ultraviolet rays. A plurality of ultraviolet-ray lamps is arrayed along the window in the lamp chamber. A measurement space is defined between the window and the lamps in the lamp chamber. The lamp chamber is provided with a mount portion to set up a measuring unit therein. The measuring unit includes a sensor to be inserted into the measuring space, for measuring the light quantity of the lamps. The sensor is movable in a direction in which the lamps are arrayed.

Abstract: Particle traps for semiconductor wafer vapor processors and methods of filtering particles in a semiconductor wafer processor are described. In accordance with a preferred implementation, a semiconductor wafer processor includes a processing chamber for containing a gas during processing of a semiconductor wafer. A particle trap is positioned within the reaction chamber and is operative for removing particles within the processing chamber. In one version, the particle trap is an electrostatic precipitator charged for removing particles from the gas. In accordance with another implementation, a semiconductor wafer vapor processor includes a processing chamber for containing a gas during processing of a semiconductor wafer. A wafer holder is provided within the processing chamber. A particle trap comprising at least two chargeable elements is positioned within the processing chamber and is spaced from the wafer holder. In one version, the processing chamber is a reaction chamber.

Abstract: Invented is a method and system for wet processing substrates (especially for semiconductor wafers and flat panel displays) using nebulized chemicals created and carried by heated chemical gases. Different heated nebulized process chemicals are sequentially pressurized into a process chamber based on various process recipes. The micro nebulized chemicals would penetrate the intricate topologies on the substrates with heated and pressurized energy, and form a process effective thin film on each substrate. The process chamber is made of a material that is well compatible to all process chemicals and gases. It is designed to have the capability of circulating the flow of nebulized chemicals and gases to uniformly treat the inside substrates. The chamber is also designed having minimum open space to save process chemicals and deionized (DI) water.

Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

Abstract: In this impurity eliminating apparatus, a mounting stand on which a wafer is mounted and a casing which confronts the mounting stand are provided in a container. A lower face of the casing consists of. quartz glass. Inside the casing, an irradiating body for irradiating ultraviolet rays toward the wafer on the mounting stand is provided. The casing is full of inactive gas atmosphere supplied from an inactive gas supply pipe. The atmosphere above the wafer is exhausted from one side by an exhauster. Following the treatment by the impurity eliminating apparatus with the above structure, coating treatment with a treatment solution for forming a SOG film is performed. Thus, organic substances on the surface of the wafer is eliminated to form the SOG film.

Abstract: An end point window assembly in an etching apparatus includes an end point bracket having an inducing tube connected to an optic cable. The end point bracket is connected to a process chamber of the etching apparatus and a main window is provided to cut off a gap between the optic cable and the process chamber. The end point window assembly further includes at least a spare window insertion groove between the main window and the process chamber about the inner circumference of the inducing tube. A spare window guiding groove corresponding in location to the spare window insertion groove is connected to and tunnelled through an inside of a body of the end point bracket, a spare window is displacably movable between the spare window insertion groove and the window guiding groove wherein the spare quartz window selectively closes the inducing tube, and a moving mechanism for transferring the spare window along the spare window guiding groove in accordance with an extent of contamination of the spare window.

Abstract: The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate.The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.

Abstract: A process chamber 15 for processing a semiconductor substrate comprising a support 20 for holding the substrate, a gas distributor 35 for distributing process gas into the process chamber, a gas energizer for energizing the process gas, and an exhaust 60 for exhausting process gas from the process chamber. The gas distributor 35 comprises monocrystalline material that provides increased erosion resistance and withstands high temperatures. Preferably, a thermal expansion isolator 115 supports the gas distributor 35 to allow portions of the gas distributor 35 to thermally expand different amounts. The gas distributor 35 can also comprise a transparent window 170 of solid material that transmits an light beam therethrough. Also, the gas distributor 35 can comprise a transparent portion facing the substrate 25 that allows light emissions from the energized gas to pass through without being reflected back onto the substrate.

Abstract: This invention provides a method and apparatus for depositing a two-layer structure, including an antireflective coating and a dielectric layer, without any intervening process steps, such as a cleaning step. The invention is capable of providing more accurate and easier fabrication of structures by reducing inaccuracies caused by the reflection and refraction of incident radiant energy within a photoresist layer used in the patterning of the dielectric layer. Additionally, the antireflective coating of the present invention may also serve as an etch stop layer during the patterning of a layer formed over the antireflective coating.

Abstract: A system that employs thermophoresis to protect lithographic surfaces from particle deposition and operates in an environment where the pressure is substantially constant and can be sub-atmospheric. The system (thermophoretic pellicle) comprises an enclosure that surrounds a lithographic component whose surface is being protected from particle deposition. The enclosure is provided with means for introducing a flow of gas into the chamber and at least one aperture that provides for access to the lithographic surface for the entry and exit of a beam of radiation, for example, and further controls gas flow into a surrounding low pressure environment such that a higher pressure is maintained within the enclosure and over the surface being protected.

Abstract: Chemical vapor deposition coating is carried out in a cylindrical cavity. The fibers are heated by a microwave source that is uses a TM0N0 mode, where O is an integer, and produces a field that depends substantially only on radius. The fibers are observed to determine their heating, and their position can be adjusted. Once the fibers are uniformly heated, a CVD reagent is added to process the fibers.