Abstract: Systems and methods of treating, e.g., stripping and coating, a target surface of an article including a passageway are disclosed. The systems may fluidly connect a pressure masker including pressurized masking fluid to a first side of the passageway, passing the pressurized masking fluid through the passageway from the first side to a second side including the target surface, and, submerging at least a portion of the target surface in a treatment bath, wherein the pressurized masking fluid passing through the passageway prevents the treatment bath from entering the passageway.

Abstract: The invention relates to a method for etching a structure (1) including at least one material (4) to be etched, said method consisting in: selecting at least one chemical species that can react with the material (4) to be etched; selecting at least one soluble compound that can release this chemical species; producing a solution (11) containing the compound and a powder of particles or solid grains (13) in suspension; placing the material to be etched in the presence of the solution; and producing high-frequency ultrasounds in the solution, at at least one frequency, capable of generating active cavitation bubbles such that the chemical species is generated and reacts with the material to be etched, thereby producing a soluble compound or a precipitate.

Abstract: The invention relates to a method for etching a structure (1) including at least one material (4) to be etched, said method consisting in: selecting at least one chemical species that can react with the material (4) to be etched; selecting at least one soluble compound that can release this chemical species; producing a solution (11) containing said compound; placing the structure (1) in a position such that the surface of the material to be etched is in the presence of the solution and additional bubbles of a gas; and producing high-frequency ultrasounds in the solution, at at least one frequency, capable of generating reactive cavitation bubbles such that the chemical species is generated in the presence of these additional bubbles and reacts with the material to be etched, thereby producing a soluble compound or a precipitate.

Abstract: A chemical supplier includes a chemical reservoir containing a chemical mixture at a room temperature, an inner space of the chemical reservoir being separated from surroundings, a supply line through which the chemical mixture is supplied to a process chamber from the chemical reservoir, an inline heater positioned on the supply line and heating the chemical mixture in the supply line to a process temperature, and a power source driving the chemical mixture to move the chemical mixture toward the process chamber.

Abstract: A substrate processing apparatus includes a spin chuck for holding a substrate horizontally, a phosphoric acid supply device for supplying phosphoric acid aqueous solution onto the upper surface of the substrate held on the spin chuck to form a liquid film of phosphoric acid aqueous solution covering the entire upper surface of the substrate, a heating device for heating the substrate with the liquid film of phosphoric acid aqueous solution held thereon and a pure water supply device for supplying pure water onto the liquid film of phosphoric acid aqueous solution.

Abstract: A substrate processing apparatus includes a phosphoric acid supply device for supplying phosphoric acid aqueous solution onto the upper surface of a substrate held on a spin chuck, a heater for emitting heat toward a portion of the upper surface of the substrate with the phosphoric acid aqueous solution being held on the substrate, a heater moving device for moving the heater to move a position heated by the heater within the upper surface of the substrate, a water nozzle for discharging water therethrough toward a portion of the upper surface of the substrate with the phosphoric acid aqueous solution being held on the substrate and a water nozzle moving device for moving the water nozzle to move the water landing position within the upper surface of the substrate.

Abstract: According to one embodiment, a planarization method and a planarization apparatus are provided. In the planarization method, a work surface of a work piece is planarized by bringing the work surface of the work piece containing a silicon oxide film and a surface of a solid plate onto which hydrogen ions are adsorbed, into contact or extremely close proximity with one another in a state in which a process liquid containing fluorine ions is supplied to the surface of the solid plate.

Abstract: A wet chemical processing method and apparatus for use in semiconductor manufacturing and in other applications, is provided. The method and apparatus provide for energizing a processing liquid such as a cleaning or etching liquid using ultrasonic, megasonic or other energy waves or by combining the liquid with a pressurized gas to form a pressurized spray, or using both. The energized, pressurized fluid is directed to a substrate surface using a fluid delivery system and overcomes any surface tensions associated with liquids, solids, or air and enables the processing liquid to completely fill any holes such as contact holes, via holes or trenches, formed on the semiconductor substrate.

Abstract: A fixture for etching PCD drill inserts is provided. The fixture design allows the fixture to be injection molded, significantly reducing costs and allowing the fixture to be disposed of after a single use. The fixture allows for faster use and more accurate etching of the PCD insert.

Abstract: A material can be locally etched with arbitrary changes in the direction of the etch. A ferromagnetic-material-including catalytic particle is employed to etch the material. A wet etch chemical or a plasma condition can be employed in conjunction with the ferromagnetic-material-including catalytic particle to etch a material through a catalytic reaction between the catalytic particle and the material. During a catalytic etch process, a magnetic field is applied to the ferromagnetic-material-including catalytic particle to direct the movement of the particle to any direction, which is chosen so as to form a contiguous cavity having at least two cavity portions having different directions. The direction of the magnetic field can be controlled so as to form the contiguous cavity in a preplanned pattern, and each segment of the contiguous cavity can extend along an arbitrary direction.

Abstract: Semiconductor die break strength and yield are improved with a combination of laser dicing and etching, which are followed by dicing an underlying layer of material, such as die attach film (DAF) or metal. A second laser process or a second etch process may be used for dicing of the underlying layer of material. Performing sidewall etching before cutting the underlying layer of material reduces or prevents debris on the kerf sidewalls during the sidewall etching process. A thin wafer dicing laser system may include either a single laser process head solution or a dual laser process head solution to meet throughput requirements.

Abstract: A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.

Abstract: Methods and apparatus for forming a sacrificial during a novel process sequence of lithography and photoresist patterning are provided. In one embodiment, a method of processing a substrate having a resist material and an anti-reflective coating material thereon includes depositing an organic polymer layer over the surface of the substrate inside a process chamber using a CVD technique. The CVD technique includes flowing a monomer into a processing region of the process chamber, flowing an initiator into the processing region through one or more filament wires heated to a temperature between about 200° C. and about 450° C., and forming the organic polymer layer. In addition, the organic polymer layer is ashable and can be removed from the surface of the substrate when the resist material is removed from the surface of the substrate.

Abstract: There is provided a method and system for adjusting the weight of a golf clubs. The method includes receiving a target additional weight for the golf club. A weighted filler is selected corresponding to the target additional weight and the interior volume of the golf club. The initially viscous weighted filler is injected into the golf club interior and allowed to cure.

Abstract: Stripping structure strips insulation from ends of a plurality of leads of a lead bundle. Each lead includes a conductor member coated with the insulation. The structure includes a housing having wall structure defining a stripping chamber, an inlet in fluid communication with the stripping chamber, and an outlet in fluid communication with the stripping chamber. A cover has an opening for receiving an end of the lead bundle in a sealing manner so that the leads thereof are received in the stripping chamber. Chemical stripping solution is in communication with the inlet. When the lead bundle is received through the opening with the leads in the stripping chamber and when the chemical stripping solution is provided though inlet and in the stripping chamber, the chemical stripping solution strips the insulation from the conductor members, with the stripping solution along with stripped insulation exiting through the outlet.

Abstract: A cleaning and purifying apparatus 40 cleans a cleaning object 51 in cleaning liquid generated by a plasma generator 1 and pours liquid from a water injection portion 60 toward the cleaning object 51 at the end of cleaning.

Abstract: There is provided an apparatus for treating a substrate using a plurality of treatment solutions in sequence. The apparatus includes treatment liquid collecting vessels for separately collecting used treatment solutions, and an exhaust member for separately discharging pollutant gases generated during a process.

Abstract: A protective chuck is disposed on a substrate with a gas bearing layer between the bottom surface of the protective chuck and the substrate surface. The gas bearing layer protects a surface region against a fluid layer covering the substrate surface. The protection of the gas bearing is a non-contact protection, reducing or eliminating potential damage to the substrate surface due to friction. The gas bearing can enable combinatorial processing of a substrate, providing multiple isolated processing regions on a single substrate with different material and processing conditions.

Abstract: A chamber with a fluid distribution network for uniform fluid flow within the chamber is provided. The chamber includes a first chamber wall that has a first surface and an opposing interior surface. The first surface is formed with a first set of channels, and the interior surface is exposed to the interior of the chamber and includes a plurality of interior ports that are connected to a plurality of the first set of channels. The chamber also includes a second chamber wall that has a second surface and an opposing exterior surface. The second surface has a second set of channels that partially intersect the first set of channels when the first surface is mated with the second surface. The exterior surface also includes at least one exterior port that provides access to the second set of channels.

Abstract: An etching method includes: applying a radiation to an etching aqueous solution; and etching a material to be etched by using the etching aqueous solution irradiated with the radiation.

Abstract: A manufacturing method of a phase retardation film is provided. A flexible light-transmissive substrate is provided. The flexible light-transmissive substrate is aligned to form an alignment substrate. A birefringent material film is formed on the alignment substrate. A reaction-causing light is used to expose and induce a reaction on a first patterned region of the birefringent material film. A second patterned region of the birefringent material film is not exposed by the reaction-causing light. The second patterned region of the birefringent material film is removed. A manufacturing system configured to produce a phase retardation film is also provided.

Abstract: In a method for manufacturing a printed circuit board, a substrate, including a number of plated through holes (PTHs) is provided. Each of the PTHs has an electrically conductive layer plated on its inner wall and includes an electrically connecting portion and a stub. A protective layer is formed on a surface of the substrate adjacent to the stub. An etching device, including an upper plate and a number of spray tubes corresponding to the PTHs, is provided. Each of the spray tubes includes a protruding portion beyond the upper plate. The substrate is arranged in such a manner that the protective layer is in contact with the upper plate and the protruding portions are received in the stubs. After that, the protruding portions spray an etchant to etch and remove the electrically conductive layer of the stubs, and the protective layer is removed.

Abstract: A solution supplying unit includes a body, a first supplying tube and a second supplying tube. The body includes a chamber having a substantially circular cross-section to receive a solution and an out-flowing part connected to the chamber to flow out the solution. The first supplying tube is disposed at a side of the body, tangentially connected to the chamber, and supplying a first solution into the chamber to rotate the first solution in the chamber. The second supplying tube has an end portion, and supplying a second solution into the chamber to mix the first solution with the second solution. The end portion is formed through the body and is adjacent to a central axis of the body.

Abstract: The present invention generally provides semiconductor substrates having submicronsized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Abstract: The disclosure provides methods of manufacturing semiconductive structures using stamping and VLS techniques.

Abstract: There is provided an apparatus including an image sensor of a back-illuminated type using a complementary metal oxide semiconductor (CMOS), including a light receiving unit, formed in a semiconductor substrate, which receives incident light, an anti-reflection film formed on a back-surface side of the semiconductor substrate in which the light receiving unit is formed, and a silicon oxide film, formed on a back-surface side of the anti-reflection film, which has a refractive index lower than a silicon nitride film and has a higher density in a back-surface side than in a front-surface side thereof.

Abstract: A substrate treatment apparatus is provided which is used for removing a resist from a front surface of a substrate. The apparatus includes a substrate holding unit which holds the substrate, and a sulfuric acid ozone/water mixture supplying unit which supplies a sulfuric acid ozone/water mixture to the front surface of the substrate held by the substrate holding unit, the sulfuric acid ozone/water mixture being a mixture which is prepared by mixing water with sulfuric acid ozone prepared by dissolving ozone gas in sulfuric acid.

Abstract: To provide a liquid processing apparatus capable of processing substrates with a high throughput with the lesser number of nozzles for chemical-liquid, when the substrates that are horizontally held in cup bodies are liquid-processed by supplying a chemical liquid to the substrates. Taking a developing process as an example of a liquid process, two-types of developing nozzles are prepared for two types of developing methods. The developing nozzle, which is used in the method in which the nozzle is engaged with the process for a longer period of time, is individually disposed on each of a first processing module 1 and a second processing module 2. On the other hand, the developing nozzle, which is used in the method in which the nozzle is engaged with the process for a shorter period of time, is used in common in the first liquid processing module 1 and the second liquid processing module 2. The common developing nozzle is configured to wait on an intermediate position between the modules 1 and 2.

Abstract: A chemical process for obtaining anti-reflective glass, comprising immersion in an acid solution, for the simultaneous and continuous production of one or more parts and/or sheets of glass having standard, special or variable dimensions, thicknesses, colours, uses and applications.

Abstract: A mask fixture for etching an item includes: a top fixture disposed over the item, including a reservoir centered within the top fixture for containing an etchant; a bottom fixture underneath the item to be etched including a recessed surface area centered within the bottom fixture; and an etch-resistant window for holding the item to be etched, the etch-resistant window disposed entirely within the recessed surface area. In addttion, a small via centered within and intersecting both the top and bottom fixtures acts as a path for a high intensity light beam.

Abstract: A substrate processing system includes a chemical liquid preparation unit preparing a chemical liquid to be supplied to a substrate and a processing unit which supplies the chemical liquid, prepared by the chemical liquid preparation unit, to the substrate. The chemical liquid preparation unit supplies an oxygen-containing gas, containing oxygen gas, to a TMAH-containing chemical liquid, containing TMAH (tetramethylammoniumhydroxide),tomaketheoxygen-containing gas dissolve in the TMAH-containing chemical liquid.

Abstract: A method of processing a substrate is disclosed. The method uses a substrate processing apparatus including a processing tank that retains a processing liquid and that accommodates a workpiece substrate, a recirculation system recirculating the processing liquid into the processing tank by supplying the processing liquid heated by a recirculation system heater from a lower portion of the processing tank and collecting the processing liquid from an upper portion of the processing tank, a plurality of heaters distributed on an upper portion and a lower portion of the processing tank to heat the processing liquid. The method includes setting a first temperature setpoint to a heater located on the upper portion of the processing tank, and setting a second temperature setpoint lower than the first temperature setpoint to a heater located on the lower portion of the processing tank.

Abstract: Methods of fabricating solar cells and apparatuses for fabricating solar cells are described. In an example, a method of fabricating a solar cell includes treating a light-receiving surface of a substrate with a gaseous ozone (O3) process. Subsequently, the light-receiving surface of the substrate is texturized.

Abstract: A highly polished surface on an aluminum substrate is formed using any number of machining processes. During the machining process, intermetallic compounds are typically generated at a top surface area of the aluminum substrate caused by spot heat generated between the tool edge and the cut tip of the aluminum substrate during the cutting process. The intermetallic compounds can leave surface imperfections after conventional mechanical polishing operations that render the surface of the aluminum substrate difficult to obtain a desired high glossiness due to exfoliation of the intermetallic compounds from the top surface. In order to remove the effect of the intermetallic compounds, an electron beam is applied to the surface resulting in Joule heating to melt down a top surface zone. In this way, any tooling traces and intermetallic compounds are eliminated.

Abstract: A wet etching method that includes forming an insulating film on a substrate, and irradiating laser light to the insulating film during wet etching of the insulating film using an etching solution.

Abstract: The invention relates to a masking system for masking a cylinder bore (2) of a combustion engine (3) during a thermal coating procedure including a masking body (4) which can be placed during the thermal coating of a first cylinder (5) of the combustion engine (3) in the cylinder bore (2) of a second cylinder (7) to cover a cylinder wall (6) of the second cylinder (7). In this arrangement the masking body (4) is designed in such a way that a flow gap (10) of predeterminable breadth can be set between the masking body (4) and the cylinder wall (6) of the second cylinder (7) for the production of a flow (8) of a fluid (9).

Abstract: In accordance with an embodiment of the present invention, a method of polishing a device includes providing a layer having a non-uniform top surface. The non-uniform top surface includes a plurality of protrusions. The method further includes removing the plurality of protrusions by exposing the layer to a fluid that has gas bubbles and a liquid.

Abstract: Methods and apparatus for etching materials using tetramethylammonium hydroxide (TMAH) are described. The methods may involve including an additive when applying the TMAH to the material to be etched. The additive may be a gas, and in in some situations may be clean dry air. The clean dry air may be provided with the TMAH to minimize or prevent the formation of hillocks in the etched structure. Apparatus for performing the methods are also described.

Abstract: A method and a mechanism for nano scale patterns with high aspect ratios etched on both photoresist layers and a carrier substrate and uses two complementary photoresist layers as an etch mask and the laser direct-write lithography technology to quickly fabricate large-size & nano scale patterns features (1) inorganic photoresist as material of a first layer of photoresist for nano scale patterns defined by laser beam direct-write lithography and (2) polymeric organic photoresist as material of a second layer of photoresist to thicken an etch mask because of effect of oxygen plasma, which has a higher etching rate on a polymeric organic photoresist layer but a lower one on an inorganic photoresist layer. For various materials of carrier substrates applied to the present invention, there are several types of Inductively Coupled Plasma-Reactive Ion Etching technologies available for nano scale patterns continuously transferred to a carrier substrate.

Abstract: According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.

Abstract: Provided is a fusing method of a substrate layer including: treating a joining surface of a substrate layer formed from a resin using an organic solvent having solubility with respect to the resin; and heating the treated substrate layer at less than a glass transition temperature or a softening point temperature of the resin and crimping the heated substrate layer.

Abstract: A heating step is performed in a printing operation where a gas jet emitting from a nozzle assembly impinges the exterior surface of a printing plate. The gas impingement provides rapid and specific convective heat flux to the exterior surface of the printing plate.

Abstract: In order to form a texture structure of inverse pyramid concavities with high speed and accuracy, when a reflection preventing texture is formed on a surface of a photovoltaic power device by laser patterning of an etching resistance film and wet etching, a plurality of laser apertures are machined in a diagonal direction of a square to be a base of the intended pyramid concavity by using a pulse laser and a laser beam splitting means, and a laser aperture pitch between the squares is set to be larger than a pitch on the diagonal.

Abstract: A knife edge ring apparatus is provided for use during semiconductor manufacturing which includes a ring-shaped body having an inner side wall, an outer side wall and a top surface having a predetermined width. A multi-staged inclined portion is formed in the outer side wall and a plurality of discharge holes penetrate the body. Each of the discharge holes have an inlet associated therewith positioned at the inclined portion. The knife edge ring allows developer and cleaning solution to be discharged away from the wafer. A method of cleaning the bottom surface of a semiconductor wafer is also provided which employs the use of the knife edge ring. Developer is supplied onto the top surface of a wafer. Spraying solution is sprayed onto the bottom surface of the wafer.

Abstract: A method of forming an aperture (e.g., a through via, a blind via, a trench, an alignment feature, etc.) within a substrate includes irradiating a substrate with a laser beam to form a laser-machined feature having a sidewall. The laser-machined feature is then processed to change at least one characteristic (e.g., the sidewall surface roughness, diameter, taper, aspect ratio, cross-sectional profile, etc.) of the laser-machined feature. The laser-machined feature can be processed to form the aperture by performing an isotropic wet-etch process employing an etchant solution containing HNO3, HF and, optionally acetic acid.

Abstract: A substrate processing apparatus comprises a single-substrate processing apparatus for processing substrates one by one, and an anti-static liquid storage part for storing an anti-static liquid having electrical resistivity maintained at target electrical resistivity higher than the electrical resistivity of an SPM liquid. A plurality of substrates held in a cartridge are immersed in the anti-static liquid inside the anti-static liquid storage part and both main surfaces of the substrate entirely come into contact with the anti-static liquid. From the substrates, static electricity is relatively gently removed. Then, after the static elimination process are finished, a processing liquid supply part supplies the SPM liquid onto an upper surface of the substrate and an SPM process is thereby performed. It is thereby possible to prevent a large amount of electric charges from rapidly moving from the substrate to the SPM liquid and also possible to prevent any damage to the substrate.

Abstract: A plasma system for treating a workpiece is disclosed. The plasma system includes: a plasma device including an electrode formed from a metal alloy and a dielectric layer covering the electrode, the dielectric layer including a distal portion extending distally past a distal end of the electrode by a predetermined distance; a liquid source configured to supply a liquid to a workpiece; an ionizable media source coupled to the plasma device and configured to supply ionizable media thereto; and a power source coupled to the electrode and configured to ignite the ionizable media at the plasma device to form a plasma effluent in the presence of the liquid, whereby the plasma effluent reacts with the liquid to form at least one reactive species that interacts with the workpiece.

Abstract: Disclosed are a liquid processing apparatus and a liquid processing method. The liquid processing apparatus includes an ejection port ejecting a first liquid to a wafer, a first liquid supply mechanism supplying sulphuric acid to the ejection port, and a second liquid supply mechanism supplying hydrogen peroxide solution to the ejection port. The first liquid supply mechanism includes a first temperature adjustment mechanism maintaining the first liquid heated to a first temperature, a second temperature adjustment mechanism connected to the first temperature adjustment mechanism, and an ejection line connecting the second temperature adjustment mechanism with the ejection port. The second temperature adjustment mechanism includes a second circulation line and a second heater. The ejection line connects the second circulation line through a switching valve at a location further downstream than the second heater.

Abstract: A cup member, a rotary table which is provided in the cup member and is driven to rotate, holding the substrate, a treatment liquid receiver which has a ring shape open upward and is provided to be movable in vertical directions, between inner circumference of the cup member and outer circumference of the rotary table, to receive the plurality of kinds of treatment liquids scattering from the substrate rotating, a linear motor which sets the treatment liquid receiver to height levels by driving the treatment liquid receiver in the vertical directions, respectively corresponding to the plurality of types of treatment liquids supplied for the substrate, and first to third separate flow channels which are provided on the cup member and separately collect the treatment liquids received by the treatment liquid receiver, respectively corresponding to the height levels set by the linear motor.

Abstract: A high purity, non-toxic, environmentally friendly method for anisotropically etching single crystal silicon and etching polysilicon, suitable for microelectronics, optoelectronics and microelectromechanical (MEMS) device fabrication, using high purity aqueous ammonium hydroxide (NH4OH) solution generated at the point of use, is presented. The apparatus of the present invention supports generation of high purity aqueous NH4OH solution from ammonia NH3 gas dissolved into distilled/deionized water and maintained in equilibrium with an overpressure of NH3, within a hermetically enclosed chamber at the optimal temperature between 70-90° C., preventing evaporation of NH3 gas from aqueous NH4OH solution for achieving a high anisotropic etching rate. Other liquid anisotropic etching methods for silicon may use tetramethylammonium hydroxide (TMAH).