Abstract: A method of etching through-substrate vias comprising depositing a layer of embossable material on a first side and a second side of a thin-film stack, the thin-film stack including a base substrate, embossing the embossable material deposited on the first side and the second side of the thin-film stack with a pattern, hardening the embossable material, and etching the first and second sides of the thin-film stack, the etching of the second side of the thin-film stack forming vias through the base substrate.

Abstract: The illustrated embodiments include a selectively removable marking product composed of an aqueous solution of at least one resin complex of polyethyleneimine (PEI) characterized by a total amine number-to-carboxylic acid number ratio in the range of 1/3 to 1 inclusive, an alkaline additive and at least one paint additive. The illustrated embodiments also include a system for semipermanently applying a marking product to the surface of an article to decorate, illustrate or color the article and then selectively removing the marking product therefrom which includes the steps of coating the surface of the article with the marking product having the composition disclosed above, air drying the marking product on the surface to provide a semipermanent coating, and at a later time selectively removing the semipermanent coating by application thereto of an alkaline solution.

Abstract: One or more techniques for nano structure fabrication are provided. In an embodiment, an apparatus for manufacturing a nano structure is disclosed. The apparatus includes a stamp having a line pattern on a surface thereof that comprises a plurality of protrusions, a die configured to hold a substrate thereon, and a mechanical processing unit configured to press the plurality of protrusions of the stamp against the substrate with a predetermined pressure so as to form at least one channel pore therebetween.

Abstract: Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output.

Abstract: Improved methods and apparatus for cleaning substrates and enhancing diffusion limited reaction at substrate surfaces use piezoelectric transducers operating in the gigasonic domain. The resonator assemblies include plural transducer stacks each including a thin film piezoelectric element coupled to a resonator plate that faces the substrate. At the disclosed frequencies and powers used, Eckart or Rayleigh streaming can be induced in a liquid treatment medium without substantial generation of cavitation.

Abstract: An etchant is stored in a treating tank; a glass substrate is transported with transport rollers into the treating tank; the etchant is discharged from below the substrate to raise the substrate to a position above the transport rollers and below the surface of the etchant; the discharge of the etching liquid is stopped and the glass substrate is lowered to a position for contacting the transport rollers; the etchant is drained from the treating tank; and the glass substrate is unloaded with the transport rollers out of the treating tank. The disclosed method and apparatus can treat both front and back surfaces of the substrate uniformly.

Abstract: An apparatus for reducing etching marks on a solar cell surface includes an etching bath, an etchant-feeding pipe configured in the etching bath, and a bubble guiding device that covers the etchant-feeding pipe. The bubble guiding device guides bubbles discharged from the etchant-feeding pipe to move toward at least one end of the etchant-feeding pipe for reducing etching marks on the solar cell surface.

Abstract: An etch apparatus, especially for silicon nitride etch includes a control unit coupled to at least one component of the group of components comprising heater current sensors, a pump transducer sensor and a flow sensor provided for a diluting liquid. A malfunction of the apparatus is avoided and the etching process can be controlled for better performance.

Abstract: The present invention relates to an apparatus and a method for the fluidic inline-treatment of flat substrates with at least one process module. In particular, the invention relates to such a treatment during the gentle and controlled transport of the substrates, wherein the treatment can also just relate to the transport of the substrates. According to the invention, a process module 1 is provided which comprises a treatment chamber 2 having at least one treatment surface 7A being substantially horizontally arranged in a treatment plane 5 and being designed for the formation of a lower fluid cushion 6A, wherein two openings in the form of entry 3 and exit 4 for the linear feed-through of the substrates 22 in the same plane are assigned to the treatment surface 7A, and at least one feed device with at least one catch 10 for the controlled feed 9 of the substrates 22 within the treatment chamber 2. Furthermore, the invention provides a method using the apparatus according to the invention.

Abstract: Provided is a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate, wherein the system comprises a plurality of substrates containing the masking layer and a layer of silicon or silicon oxide, an etch processing chamber configured to process the plurality of substrates, the processing chamber containing a treatment liquid for etching the masking layer, and a boiling apparatus coupled to the processing chamber and configured to generate a supply of steam water vapor mixture at elevated pressure, wherein the steam water vapor mixture is introduced into the processing chamber at a controlled rate to maintain a selected target etch rate and a target etch selectivity ratio of the masking layer to silicon or silicon oxide.

Abstract: To ensure a uniform flow over the surface of a product W, an apparatus is provided for the wet chemical treatment of the product W that is disposed in the apparatus 100. This apparatus comprises at least one flow member 150 that includes respectively at least one paddle-like flow element 155, wherein at least one flow member 155 is disposed situated opposite the surface of the product W and is moveable substantially parallel to the surface of the product W.

Abstract: An etching method includes: applying a radiation to an etching aqueous solution; and etching a material to be etched by using the etching aqueous solution irradiated with the radiation.

Abstract: A method of chemically milling a workpiece includes depositing a masking material on portions of the workpiece according to a predefined masking pattern such that other portions of the workpiece that are desired to be milled are unmasked. Material from the unmasked desired milling areas of the workpiece is chemically removed.

Abstract: Among other things, methods, systems and apparatus are described for implementing nanomotor-based micro- and nanofabrication. In one aspect, a method of fabricating nanoobjects comprises functionalizing a nanomotor with a reagent. The method also includes controlling a movement of the functionalized nanomotor in a solution containing material to react with the reagent to induce a localized deposition or precipitation of a product onto a surface of a substrate or etching of the substrate.

Abstract: A cluster beam generating apparatus that generates a cluster beam includes a mixer that mixes a gas source material and a liquid source material; a nozzle that supplies a cluster beam including clusters originating from the gas source material and the liquid source material that are mixed in the mixer; and a temperature adjusting portion that adjusts a temperature of the nozzle, thereby controlling a ratio of the clusters originating from the gas source material and the clusters originating from the liquid source material in the cluster beam.

Abstract: A method for texturing a surface of a semiconductor substrate is proposed. Therein, the surface is etched with an etching solution which etches the semiconductor substrate material, wherein a wetting agent is added to the etching solution, which wetting agent contains water-soluble polymers, in particular in the form of polyvinyl alcohol. Therein, the process temperatures of the etching solution can be increased in comparison to conventional texturing methods, as a result of which the process time can be reduced. Process guidance is simplified and process stability is increased. A suitable texturing device for carrying out the method can, in addition to a basin for accommodating the etching solution and a heater for heating the etching solution to at least 85° C.

Abstract: An improved design for a closed chamber process module for single wafer wet processing utilizes a combination lid and gas showerhead for sealing the chamber from above. One or more media arms dispense liquid onto a wafer in the chamber. The media arms are mounted inside the chamber but are connected by a linkage that passes through the chamber wall to a drive unit mounted outside the chamber.

Abstract: There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate.

Abstract: Phosphoric acid, sulfuric acid, and water are supplied to a flow path for a processing liquid from a first tank to a substrate held by a substrate holding unit. As a result, a mixed liquid containing the phosphoric acid, the sulfuric acid, and the water is generated. A liquid containing the sulfuric acid and a liquid containing the water are mixed together in the flow path, and the temperature of the mixed liquid containing the phosphoric acid, the sulfuric acid, and the water rises. A mixed liquid containing a phosphoric acid aqueous solution whose temperature is close to its boiling point is supplied to the substrate held by the substrate holding unit.

Abstract: The wafer processing apparatus 100 included in an etching apparatus selectively etches the peripheral portion of a wafer 200. The wafer processing apparatus 100 includes a lower electrode 112 as a stage on which the wafer 200 is placed, a process gas introducing duct 120 supplying therethgouh a process gas etching the peripheral portion, an etching-interfering gas introducing duct 118 supplying therethrough an etching-interfering gas interfering supply of the process gas to the center portion of the wafer, and a movable alignment mechanism 102 aligning the wafer on the lower electrode 112. The etching-interfering gas introducing duct 118 and the process gas introducing duct 120 can be provided in an upper electrode 106.

Abstract: A substrate treatment device including a cleaning chamber that is capable of decreasing a thick waste solution from the chamber, and improving use efficiency of a diluted waste solution from the chamber. The chamber supplies a cleaning solution onto a front surface of a chemical-treated substrate being transferred tilted toward its back surface side at some degrees to the upright by a cleaning-solution discharge unit. The chamber is partitioned into rough and fine cleaning chambers (103) (104) at upstream and downstream sides, each having vents on bottom walls, with a partition standing on the bottom wall, the rough chamber including a gutter (112) collecting the solution discharged from the discharge unit and falling down without being supplied onto the front surface, the gutter inclined down toward the fine chamber and having a vent draining the solution flowing therethrough, the gutter's vent approaching the fine chamber across the partition.

Abstract: Techniques are here disclosed for a solar cell pre-processing method and system for annealing and gettering a solar cell semiconductor wafer having an undesirably high dispersion of transition metals, impurities and other defects. The process forms a surface contaminant layer on the solar cell semiconductor (e.g., silicon) wafer. A surface of the semiconductor wafer receives and holds impurities, as does the surface contaminant layer. The lower-quality semiconductor wafer includes dispersed defects that in an annealing process getter from the semiconductor bulk to form impurity cluster toward the surface contaminant layer. The impurity clusters form within the surface contaminant layer while increasing the purity level in wafer regions from which the dispersed defects gettered. Cooling follows annealing for retaining the impurity clusters and, thereby, maintaining the increased purity level of the semiconductor wafer in regions from which the impurities gettered.

Abstract: An apparatus for wet treatment of an object includes a treatment bath in which an object to be treated is received and treated; a plurality of object supporting rods rotatably installed in the treatment bath and having a plurality of slots formed in surfaces thereof to support an object so that the object stands in a direction perpendicular to a bottom surface of the treatment bath; and a rotating means connected to the object supporting rods to rotate the object in a circumferential direction by rotating the object supporting rods. Treatment fluid injecting holes for injecting a treatment fluid to the object and treatment fluid channels for supplying the treatment fluid to the treatment fluid injecting holes are formed in the object supporting rods. Thus, a dead zone in the treatment bath is removed and the treatment fluid may flow uniformly and smoothly, which improves treatment efficiency and treatment uniformity.

Abstract: A chemical treatment apparatus includes an outer bath; an inner bath, located inside the outer bath; a circulation system, connecting the outer bath to the inner bath; and a draining system, having a first draining pipe and a connecting pipe, wherein the connecting pipe connects the first draining pipe to the circulation system. The suction force generated by a pump of the circulation system is thereby transferred to the first draining pipe. Therefore when the chemical solution is to be drained out from the inner bath, the draining of the chemical solution into the first draining pipe can be quickly done with the aid of the suction force.

Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.

Abstract: A substrate processing apparatus discharges a hydrofluoric acid solution from discharge nozzles toward grooves formed in side walls of an inner bath. The hydrofluoric acid solution discharged from the discharge nozzles impinges upon the grooves to diffuse, thereby moving toward a top portion of the inner bath in the form of low-speed uniform liquid flows. Thus, a metal component and foreign substances generated in the inner bath float up toward the top portion of the inner bath without being agitated within the inner bath, and are rapidly drained to an outer bath together with the hydrofluoric acid solution.

Abstract: An ink mixed with spacer members is ejected onto one or both of a TFT substrate and a CF substrate while an ink jet head having a plurality of ink jet nozzles is moved. The excursions of a predetermined number of ink jet nozzles from an end of the ink jet head overlap those of a next excursion of the ink jet head without causing overlapping of ejected ink within the overlapping area. An abrupt stepwise change in the amount of ejected ink is suppressed whereby an uneven gap is suppressed.

Abstract: A solution supplying unit includes a body, a first supplying tube and a second supplying tube. The body includes a chamber having a substantially circular cross-section to receive a solution and an out-flowing part connected to the chamber to flow out the solution. The first supplying tube is disposed at a side of the body, tangentially connected to the chamber, and supplying a first solution into the chamber to rotate the first solution in the chamber. The second supplying tube has an end portion, and supplying a second solution into the chamber to mix the first solution with the second solution. The end portion is formed through the body and is adjacent to a central axis of the body.

Abstract: The present invention provides a substrate processing apparatus for processing substrates by immersing the substrates in a processing liquid. This substrate processing apparatus includes a processing tank having a pair of side walls arranged to be opposed to each other; and a pair of processing-liquid supply mechanisms provided respectively corresponding to the pair of side walls. The pair of processing-liquid supply mechanisms are respectively configured for supplying the processing liquid toward a central portion of the processing tank in the width direction connecting the pair of side walls, thereby to create a rising flow of the processing liquid in a central area in the width direction of the processing tank. Each inner wall face of the pair of side walls includes a main body, a projecting portion located above the main body, and a discharge guide portion located uppermost and providing a discharge port configured for allowing the processing liquid to overflow.

Abstract: A method and apparatus for machining, or forming a feature in, a patterned silicon wafer includes removing portions of surface layers on the wafer using a first pulsed laser (4) beam with a pulse width between 1 ps and 1000 ps; and removing portions of bulk silicon (1) underlying the surface layers from the wafer using a second pulsed laser (5) beam with a wavelength between 200 nm and 1100 nm. Re-deposited silicon may be removed from the wafer by etching.

Abstract: A method for encapsulating structures (11) (typically MEMS structures) supported by a carrier substrate (12) (typically made of glass or silicon), includes: application, on the carrier substrate (12), of at least one cover (7) supported by a mould (1, 2, 6), the mould including a catching layer (6), each cover (7) being in contact with the catching layer (6); then fastening of at least one cover (7) onto the carrier substrate (12); and then separation of the mould (1, 2, 6) from the at least one cover (7). The catching layer (6) includes a fluoropolymer. Preferably, the mould (1, 2, 6) is mechanically separated from the at least one cover (7), by pulling the mould (1, 2, 6) away from the at least one cover (7). Thus, the mould (1) can be reused, which considerably simplifies encapsulating operations carried out on an industrial scale.

Abstract: The wet-processing apparatus includes a wet-step bath in which a wet-step is carried out, and a vibration-type film separator for separating impurities out of a solution used in the wet-step. The wet-processing apparatus further includes a re-supply path through which the solution out of which the impurities were removed by means of the vibration-type film separator is re-supplied to the wet-step bath. Thus, it is possible to reuse a solution and a material of which a pattern is composed. Since the vibration-type film separator is used, it is possible to reduce a frequency of exchanging filters equipped in the vibration-type film separator, and ensure a high rate at which a material of which a pattern is composed is recovered, regardless of a specific gravity of the material.

Abstract: The present invention provides systems and methods for x-ray imaging. In some embodiments, an aperture, or a plurality thereof, are configured to have image transfer functions lacking a zero within a usable spatial frequency range. In further embodiments, the image transfer function is determined according to the shape of the aperture and the usable spatial frequency range is deter mined according to a usable signal to noise ratio.

Abstract: Proposed are a composite material having a high adhesiveness, wherein non-penetrating pores that are formed in a silicone surface layer are filled up with a metal or the like without leaving any voids by using the plating technique and the silicone surface layer is coated with the metal or the like, and a method of producing the composite material. A composite material, which has a high adhesiveness between a second metal or an alloy of the second metal (106a, 106b) and a silicone surface, can be obtained by filling up non-penetrating pores that are formed in the surface of a silicone substrate (100) substantially with a second metal or an alloy of the second metal (106a) with the use of the autocatalytic electroless plating technique wherein a first metal located at the bottom of the non-penetrating pores as described above serves as the starting point, and coating the surface of the silicone substrate (100) with the second metal (106b).

Abstract: The invention discloses a method and apparatus for transferring nano-carbon material. The nano-carbon material is grown, by chemical vapor deposition, on a catalyst layer provided between a first and a second oxide layer of a multilayer film structure grown on a first substrate through chemical vapor deposition, and then separated from the first substrate by etching away the first and second oxide layers by a wet etching process. The separated nano-carbon material floats on the etchant, and is then pulled up by an etch-resistant continuous conveyance device and transferred to a second substrate. And, in a further imprinting process, large area nano-carbon material can be continuously imprinted onto the second substrate to show a particularly designed pattern.

Abstract: A method and system for treating a surface structure of a workpiece. The method provides a carrier-gel to the surface structure of the workpiece. The carrier-gel includes an etchant for selectively etching a first material of the surface structure and has a gel particle size larger than the surface structure. The method etches the first material from the surface structure by a reaction of the etchant included in the carrier-gel with the first material of the surface structure in order to remove a part of the first material from the surface structure for subsequent device fabrication. The system includes a chemical reactor supporting the workpiece. The chemical reactor is configured to flow the carrier-gel noted to the surface structure of the workpiece in order to remove the first material from the surface structure.

Abstract: Method and device for selectively etching a first material (4) relative to a second material (2), comprising a bath (11) of a solution capable of producing at least one chemical species for etching the first material (4) but not the second (2) and a system (12) for generating ultrasound at a frequency between 100 kHz and 3 MHz in the bath in order to produce cavitation bubbles.

Abstract: An etching apparatus for substrates includes an etching tank including an etching solution, a cassette having a plurality of substrates mounted therein and which is installed inside the etching tank, a porous plate installed on a lower surface of the cassette and a plurality of discharge sections provided in the porous plate corresponding to the substrates and each of the discharge sections having a plurality of discharge ports. The etching apparatus further includes a plurality of first lines connected to the discharge ports respectively, and supplied with a gas to provide bubbles to the substrates through the discharge ports. The first lines are divided into a plurality of groups, and at least one group is supplied with a gas having a pressure different from a pressure of a gas supplied to other groups.

Abstract: A glass article having an anti-glare surface. The anti-glare surface has a distinctness-of-reflected image of less than 95, and a haze of less than or equal to 50%. In one embodiment, the glass article further includes a smudge-resistant surface disposed on the anti-glare surface. Methods of making the glass article and anti-glare surface are also described.

Abstract: A process apparatus and a method for making semiconductor devices is implemented in a semiconductor equipment and utilizes three magnetic objects arranged in a helical path. Chemicals within the chemical pipe are magnetized, and the chemicals include etch acids, photoresist stripper and clean chemicals. Then, efficiency of semiconductor process is increased.

Abstract: The invention relates to a method for forming a plurality of electrically conductive islands in a working layer of a multilayer structure made from semiconductor materials, with the structure including an electrically insulating layer located beneath the working layer. This method includes the steps of selectively masking certain regions of the working layer in order to define several islands therein, with each region masked from the working layer corresponding to a respective island, and then wet chemical etching of the masked working layer to form a plurality of working layer islands each surrounded by the electrically insulating layer. The invention also proposes the application of such a method to the characterization of the electrical properties of a structure, and an associated device.

Abstract: A method for manufacturing a glass cliché using laser etching includes a dipping step for dipping a glass cliché, which will be etched, into an etching solution, a patterning step for irradiating laser to the glass cliché dipped in the etching solution to form a pattern therein, and a washing step for washing the patterned glass cliché. This method allows making a cliché with a high aspect ratio and fine line widths in comparison to a conventional cliché manufacturing method using photoresist for etching, and also ensures more efficient energy consumption and higher etching efficiency rather than an etching method using laser only.

Abstract: A method for producing a metallized image on a sheet material includes impregnating the material with a metal salts-containing solution and exposing the specified material points to a pulse laser radiation. The interaction of the pulses with the solution within a laser spot irritates a photochemical reaction resulting in a metal ion reduction into the elementary state thereof by associating the required number of electrons and deposition of metallic film which is firmly fixed to the filler of the sheet material in the laser spot area on the material surface. In case of sufficient laser radiation power, a recess is formed on the sheet material surface, and the metallic film is deposited on the bottom of the recess.

Abstract: On a hot plate, jigs and wafers are joined by bonding wax. A first transport mechanism, a posture change mechanism, a pusher and a second transport mechanism transport the jigs joined with the wafers from the hot plate to a treating transport mechanism. The treating transport mechanism immerses the jigs joined with the wafers in a treating solution stored in a treating tank. Thus, the wafers may be thinned, or otherwise treated, without a turn table directly contacting and damaging the wafers as in the prior art.

Abstract: An exemplary film hole forming apparatus (400) includes a chemical etching system (410) and a driving system (420). The driving system includes a transmission belt, which passes through the chemical etching system. A material of the transmission belt is polytetrafluoroethylene, polytetrafluoroethylene-containing material, polyvinylidene fluoride, metal, or metal-sandwiched composite. An exemplary method for forming film holes includes the following steps: providing a flexible printed circuit board (300) to be etched, with copper holes (321) pre-formed thereat and the copper holes exposing a base film (310) at corresponding positions; and transporting the flexible printed circuit board into a chemical etching system by a transmission belt to form film holes in the base film.

Abstract: Disclosed is a method for smoothing the surface of at least one side of a wafer which is obtained by slicing a semiconductor ingot. In this method, a fluid is applied according to projections of the wafer surface, thereby reducing the projections. Alternatively, a fluid is applied over the wafer surface, thereby smoothing the entire surface of the wafer while reducing the projections in the wafer surface.

Abstract: A novel semiconductor wafer lifter is disclosed for handling wafers during wet bench processing. In particular, the lifter has a plurality of holes formed in its vertical support surface to allow cleaning or rinsing fluid to flow through the vertical support instead of around its sides. These holes facilitates a constant flow of fluid across the wafer during recirculation of the tank contents during etching and rinsing operations, thus ensuring more even etching of all wafers and minimizing the deposition of particulate matter on wafer surfaces.

Abstract: A micro-fluid ejection device is assembled by wafer-to-wafer bonding at a temperature below about 150° C. a first silicon oxide layer of a first wafer, having flow features patterned in the first silicon oxide layer on an actuator chip in a first silicon substrate of the first wafer, to a second silicon oxide layer of a second wafer, defining a nozzle plate on a second silicon substrate of the second wafer. Nozzle holes are formed in the nozzle plate in alignment with actuator elements of the actuator chip of the first wafer either before or after bonding the first and second wafers together. The second silicon substrate of the second wafer is used as a handle and then removed from the silicon oxide layer of the second wafer after bonding the first and second wafers together.

Abstract: A method and an apparatus for removing fine-grain silicon material from coarse-grain ground silicon material are disclosed. In the method, ground silicon material is selected that exhibits a predominantly brown color in an aqueous suspension, indicating that a considerable fraction of the ground silicon material has a grain size of less than 0.25 ?m, and the ground silicon material is supplied to a reaction vessel. An aqueous or water-containing solution of a base is added to the ground silicon material, causing an etching process which chemically removes a fine fraction with a grain size of less than approximately 1 ?m. Acid or water is then added to terminate etching and cause rapid sedimentation of a suspension in form of a relatively coarse-grain solid, which can be removed for further processing. The solution formed above the relatively coarse-grain solid can also be withdrawn.

Abstract: A method for manufacturing a flash memory device is capable of controlling a phenomenon in which a length of the channel between a source and a drain is decreased due to undercut. The method includes forming a gate electrode comprising a floating gate, an ONO film and a control gate using a hard mask pattern over a semiconductor substrate, forming a spacer over the sidewall of the gate electrode, forming an low temperature oxide (LTO) film over the entire surface of the semiconductor substrate including the gate electrode and the spacer, etching the LTO film such that a top portion of the source/drain region and a top portion of the gate electrode are exposed, and removing the LTO film present over the sidewall of the gate electrode by wet-etching.