Abstract: A wet etch system including a process tank having an inner etch bath chamber and an outer overflow chamber surrounding the etch bath chamber. A frame which is removably mounted on the process tank defines a diversion channel between the upper ends of the etch bath chamber and overflow chamber. The etch bath chamber receives a wafer-containing cassette, which displaces etchant from the etch bath chamber, through the diversion channel and into the overflow chamber, where the etchant is drained from the process tank. Particulate impurities leave the etch bath chamber, enter the overflow chamber and drain from the process tank with the overflow etchant. Fresh etchant is poured into the etch bath chamber prior to a subsequent etch cycle. A water spray loop may be provided in the overflow chamber for removing etch particles from the interior wall surfaces of the overflow chamber.

Abstract: The invention relates to a novel CMP slurry composition used for polishing metals, the composition comprising: (a) a dispersion solution comprising an abrasive; and (b) an oxidizer. The slurry composition has a large particle count of less than about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, one surface of the microelectronic substrate is engaged with a planarizing pad and the opposite surface of the microelectronic substrate is positioned proximate to a substrate support. A bearing liquid, such as a planarizing liquid, is directed toward the second surface of the microelectronic substrate to form a liquid bearing between the substrate and substrate support. The microelectronic substrate can precess relative the substrate support as the substrate support moves relative to the planarizing pad. The substrate support can include a sensor to determine a characteristic, such as a thickness, of the liquid bearing. In another embodiment, a portion of the liquid bearing can be removed from the second surface of the microelectronic substrate to control the thickness of the liquid bearing and/or to remove particulate matter from the liquid bearing.

Abstract: A method and an apparatus for making a light emitting display is provided. The apparatus includes a discharge device with an inlet and an outlet with the portion of the discharge device defining a delivery path. An actuating mechanism is moveably positioned along the delivery path. A substrate retaining device is positioned spaced apart from the outlet of the discharge device in the delivery path. The inlet of the discharge device is adapted to be connected to a pressurized source of a thermodynamically stable mixture of a compressed fluid and one of a hole transporting material, a light emitting material, and an electron transporting material. The compressed fluid is in a gaseous state at a location beyond the outlet of the discharge device and prior to the substrate retaining device.

Abstract: A system (10) produces patterned deposition on a substrate (14) from compressed fluids. A delivery system (12) cooperates with a controlled environment (30, 100, 200) retaining a substrate (14) for receiving precipitated functional material (44) along a fluid delivery path (13) from the delivery system (12). A mask (22) is arranged in close proximity to the substrate (14) for forming the patterned deposition on the substrate (14).

Abstract: Methods for etching a target conducted in an etching solution that is substantially free of entrained oxygen gas, thereby inhibiting oxidation of an etching target, and apparatus for achieving the same. An etching solution that is substantially free of entrained oxygen gas is achieved by driving off the entrained oxygen gas with an inert gas.

Abstract: An apparatus enabling preparation and use of a fixed abrasive polishing member is described. The apparatus includes a patterned three-dimensional substrate, an abrasive coating a surface of the patterned substrate and a vacuum deposition chamber in which the abrasive is applied to the surface of the substrate. In addition, rather than a fixed abrasive, non-abrasive material may be applied to the surface of the patterned substrate, in which case, a conventional slurry may be used in planarization of an applied semiconductor wafer.

Abstract: A substrate holder has a disk-like body with a central recess having diameter smaller than the diameter of the substrate placed onto the upper surface of the holder. The substrate can be clamped in place by the clamps of the edge-grip mechanism or placed into a seat without the use of clamps. In both cases, the substrate forms a partial wall that confines the heating/cooling recess or chamber. The aforementioned recess is filled with a cooling or heating liquid (depending on the mode of metal deposition) selectively supplied from a liquid heating or cooling system. In order to ensure in the working chamber above the substrate a pressure slightly higher than the pressure in the cooling/heating recess, the working chamber is first filled with the working solution under the atmospheric pressure, and then the recess is filled with a heating or cooling liquid with simultaneous increase of pressure in the working chamber to a level slightly exceeding the pressure in the recess.

Abstract: A substrate processing apparatus that removes an unwanted material on a surface of a peripheral portion of a substrate through etching by supplying etching liquid to the surface of the peripheral portion. The apparatus includes an etching liquid supplying mechanism that supplies the etching liquid to the peripheral portion of the substrate, and an annular member that has an inner periphery on or inside an outer periphery of the substrate and thereby defines a processing width to be processed by the etching liquid on the surface of the peripheral portion of the substrate. The annular member may be placed in close proximity to the surface of the peripheral portion of the substrate while securing a certain gap such that allows the annular member to come in contact with a liquid film of the etching liquid formed on the surface of the peripheral portion.

Abstract: An integrated oxide removal and processing system (10) includes a process module (30) that may intentionally add at least one film layer to a single semiconductor wafer (32). The integrated oxide removal and processing system (10) also includes a transfer chamber module (20) used to align the semiconductor wafer (32) for the process module (30). The transfer chamber module (20) may expose the semiconductor wafer (32) to a vaporous solution that is inert with respect to the semiconductor wafer (32) and operable to remove an oxide layer (110) therefrom. More specifically, the semiconductor wafer (32) includes silicon. In a further embodiment, the vaporous solution includes HF. In yet a further embodiment, the vaporous solution includes 0.049% to 49% HF.

Abstract: In an apparatus for etching a glass substrate according to the present invention, impurities that are attached to the surface of a glass substrate, which are formed by assembling a color filter substrate and a TFT substrate provided in the etching bath filled with etchant, are removed by using ultrasonic oscillation generated from an ultrasonic oscillator, by which a glass substrate having uniform thickness and surface is obtained.

Abstract: In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.

Abstract: The invention intends to provide an etching method in which a bank 12 is formed to a member to be processed 10, and thereby a precise etching can be applied to a predetermined position, and apparatus for the method.

Abstract: A polishing solution is dispensed onto a polishing pad that has a polishing surface, a substrate is brought into contact with the polishing surface, relative motion is created between the substrate and the polishing pad, a light beam is directed through a window in the polishing pad to impinge the substrate, and an intensity of a reflected light beam from the substrate is monitored. The polishing solution has a first refractive index, and the window has a second index of refraction that is approximately equal to the first index of refraction.

Abstract: A tank is set up to hold a precise volume of acid by first adjusting an overflow pipe to establish a volume that is larger than the desired volume and then adjusting the vertical position of a volume occupying element that extends above and below the surface of the acid. The apparatus includes a drain pipe for directing the acid to a tank that holds deionized water that the acid is mixed with. The bath is used for etching a silicon dioxide layer on a semiconductor wafer.

Abstract: Of a substrate-facing surface 24 of an atmosphere blocking member 2, a central area 241 which is faced with an approximately central portion of a substrate S is a flat surface while a periphery edge area 242 which is faced with a periphery edge of the substrate S is an angled surface which becomes closer to the substrate S with a distance toward a periphery edge of the substrate-facing surface 24. Hence, a micro-space SP between the substrate S and the atmosphere blocking member 2 becomes gradually narrower in a direction R which is toward the periphery edge of the substrate S. As an atmosphere gas is fed into the micro-space SP, the atmosphere gas is compressed in the vicinity of a periphery edge of the micro-space SP and a pressure rises. As a result, the micro-space SP becomes positively pressurized as compared with a mist-splashed atmosphere, which effectively prevents a mist from invading other major surface S2 of the substrate S.

Abstract: A method and composition for planarizing a substrate surface having a barrier layer disposed thereon. In one aspect, the invention provides for planarizing a substrate surface having a barrier layer and a copper containing material disposed thereon including chemical mechanical polishing the substrate to selectively remove excess copper containing material, chemical mechanical polishing the substrate to selectively remove residual copper containing material and a portion of the barrier layer, and chemical mechanical polishing the substrate to selectively remove residual barrier layer.

Abstract: A substrate (W) is held and rotated in its horizontal position on a spin base (10). A processing liquid can be supplied from a processing liquid lower nozzle 15 to the lower surface of the substrate (W). The upper surface of the substrate (W) is covered with an atmosphere blocking plate (30). A splash guard (50) is disposed so as to circumscribe the substrate (W). A guard (52) is curved such that the vertical cross section of a recovery port (52f) of the splash guard (50) is of substantially U-shape opening to the center of the splash guard (50), so that the maximum internal diameter part of the recovery port (52f) is brought near a guard (53). The space between the internal wall surface of the recovery port (52f) and the substrate (W) is increased to thereby suppress the bounce of the processing liquid flying spattering from the substrate (W) in rotation.

Abstract: A chemical-mechanical jet etching method rapidly removes large amounts of material in wafer thinning, or produces large-scale features on a silicon wafer, gallium arsenide substrate, or similar flat semiconductor workpiece, at etch rates in the range of 10-100 microns of workpiece thickness per minute. A nozzle or array of nozzles, optionally including a dual-orifice nozzle, delivers a high-pressure jet of machining etchant fluid to the surface of the workpiece. The machining etchant comprises a liquid or gas, carrying particulate material. The liquid may be a chemical etchant, or a solvent for a chemical etchant, if desired. The areas which are not to be etched may be shielded from the jet by a patterned mask, or the jet may be directed at areas from which material is to be removed, as in wafer thinning or direct writing, depending on the size of the desired feature or etched area.

Abstract: A system and method for removing a predetermined length of coating from a fiber optic cable. The system includes a chemical bath, and a system for forming a loop in a fiber optic cable. The loop forming system includes a vertical column, and a slide arm having a guide collar portion slidably provided on the vertical column, and a distal portion extending away from and integral with the guide collar portion. The loop forming system further includes a mount shaft extending from and connected to the distal portion of the slide arm, the mount shaft having clamps and a tensioning spring for retaining portions of the fiber optic cable. A push rod movably extends through the mount shaft, and connects to a fiber optic cable loop former. The fiber optic cable loop former engages a surface of the mount shaft and is pushed away therefrom by the push rod during formation of the loop in the fiber optic cable.

Abstract: A method of removing polymer adhered to a sidewall of an etched metal layer formed on a substrate, includes (a) dissolving the polymer by providing chemicals onto a surface of the substrate, and (b) rinsing the chemicals out of the substrate by providing pure water onto a surface of the substrate, wherein at least a part of the step (a) is carried out in oxidation atmosphere.

Abstract: In a first aspect, a liquid delivery system is provided that includes a first liquid delivery module adapted to store and dispense a first chemical and a second liquid delivery module adapted to store and dispense a second chemical. The liquid delivery system further includes at least one connecting mechanism coupled to the first and second delivery modules and adapted to couple the first and second delivery modules to a substrate processing device. Each delivery module includes a vessel including a first chamber and a second chamber. The vessel is configured to receive a liquid from a bulk supply and to receive a pressurized flow of gas from a gas source. Each liquid delivery module also includes a valve assembly operable to selectively permit fluid communication between the first chamber and the second chamber during a non-refill state and to prevent fluid communication between the first chamber and the second chamber during a refill state.

Abstract: A device for scouring a coating from a fibrous material includes a tank for immersing a plurality of fibers in scouring solvent therein. The device also includes a bubbling device positioned therein and having a chamber formed between a base plate and a cover plate with a plurality of holes. The plurality of fibers is mounted within the tank above the cover plate and holes of the bubbling device, so that gas bubbles produced thereby move through the scouring solvent and through the plurality of fibers. The holes are arranged in a pattern on the cover plate that corresponds to a shape assumed by the plurality of fibers when mounted within the tank. A process for scouring a coating from a fibrous material is also disclosed and involves immersing a plurality of fibers in a scouring solvent and producing a plurality of gas bubbles that move through the solvent and the plurality of fibers.

Abstract: A support member of a rotary base member engages with a substrate for preventing the substrate from horizontal movement and rotation with respect to the rotary base member while allowing vertical movement of the substrate, and a proximity suction plate is provided above the rotary base member so that the lower surface thereof is formed on a plane on the rotary base member parallel to the substrate for downwardly and outwardly injecting gas toward the overall upper surface of the substrate and sucking the substrate in a proximity state by Bernoulli effect. It is possible to provide an apparatus capable of reliably preventing mist of a processing solution or the processing solution from reaching the upper surface of the substrate when rotating the substrate and supplying the processing solution to the lower surface for processing the substrate.

Abstract: An apparatus for forming a loop in a filament comprising a first wall having a first guide slot formed therein and a second wall having a second guide slot formed therein coplanar and parallel to the first guide slot. The first wall is opposite the second wall and each of the guide slots has opposing ends. A first gripper holds a filament at a first location. The first gripper is mounted from the first wall to the second wall at an end of each of the first guide slot and the second guide slot. The apparatus also includes a movable gripper to hold the filament at a second location. The movable gripper has a separation from the first gripper and is mounted from the first wall to the second wall adjacent to the other end of each of the first guide slot and the second guide slot for movement towards the first gripper to reduce the separation between them. This produces a loop of filament between the first gripper and the moveable gripper.

Abstract: A wafer transfer robot for a wafer processing system, such as a wet bench system, and a method for utilizing the robot. The wafer transfer robot can be constructed by a robot arm that is equipped with a plurality of wafer blades each adapted for picking-up and carrying one of a plurality of wafers. The plurality of wafer blades each has a predetermined thickness, a top surface, a bottom surface and a predetermined spacing from adjacent wafer blades. A plurality of sensors, such as optical sensors, capacitance sensors or magnetic sensors, with at least one mounted on the bottom side of one of the plurality of wafer blades for sensing the presence of metal on a wafer carried on an adjacent wafer blade immediately below the one of the plurality of wafer blades.

Abstract: A liquid processing apparatus is capable of uniformly processing substrates by a liquid process. The liquid processing apparatus has a chemical liquid tank (21) containing a processing liquid for processing wafers (W) by a predetermined liquid process, a carrying device (24) provided with a wafer holder (42) capable of holding a plurality of wafers (W) to be subjected to the liquid process in a vertical position, and capable of carrying the wafers (W) between a processing position where the wafers (W) are immersed in the chemical liquid contained in the chemical liquid tank (21) and a position above the processing position, and a cover (50) for covering a space extending over the wafers (W) held on the wafer holder (42) of the carrying device (24) so that any air currents may not be substantially generated in the same space.

Abstract: The present invention provides a method of forming a circuit pattern on an integrally bonded member, the method not requiring a correction step of a laminate film or a resist film which has been necessary at the time of wet treatment of the integrally bonded member. After a circuit pattern forming metal plate 13 is bonded on a part of a ceramic substrate 12 so as to expose an outer peripheral edge portion of the ceramic substrate 12 in an integrally bonded member 10, the integrally bonded member 10 is set on a treating apparatus 30 while being covered with a masking member 20 having a window portion 22 from which the circuit pattern forming metal plate 13 of the integrally bonded member 10 is exposed.

Abstract: A process and system for removing photoresist from semiconductor wafers comprises applying pressure in excess of one atmosphere to ozone, mixing the ozone with ambient temperature or higher deionized water via a sparger plate, and exposing the semiconductor wafers to the mixture of ozone and deionized water. The system is comprised of a tank capable of holding the semiconductor wafers, a sparger plate within the tank, a source of ozone connected to the tank, a source of deionized water connected to the tank; and finally a means for recirculating the deionized water connected to the tank. No chiller is included in the system as required by the prior art.

Abstract: The present invention relates to a web handling apparatus and process ideally suited for applications involving wet chemistry. The invention involves the horizontal processing of webs in processing containers. The web is redirected into the processing container by inserting a cassette across the web and into the processing container. The cassette includes at least one functional fluid element that facilitates processing of the web. The web handling practices of the invention improve the quality of the processed web. The invention is preferably used in electrodeposition processes.

Abstract: An apparatus for etching a glass substrate includes a first bath containing an etchant, at least one porous panel having a plurality of jet holes in the first bath, the porous panel containing the etchant to jet the etchant against the glass substrate, a container storing the etchant, and a pump supplying the etchant from the container to the porous panel, the pump being connected to the container and the porous panel.

Abstract: An apparatus for supercritical processing and non-supercritical processing of a workpiece comprises a transfer module, a supercritical processing module, a non-supercritical processing module, and a robot. The transfer module includes an entrance. The supercritical processing module and the non-supercritical processing module are coupled to the transfer module. The robot is preferably located within the transfer module. In operation, the robot transfers a workpiece from the entrance of the transfer module to the supercritical processing module. After supercritical processing, the robot then transfers workpiece from the supercritical processing module to the non-supercritical processing module. After the non-supercritical processing, the robot returns the workpiece to the entrance of the transfer module. Alternatively, the non-supercritical processing is performed before the supercritical processing.

Abstract: A developing processing apparatus for supplying a developing solution to a wafer on which a photoresist film has been formed to thereby perform developing processing includes a wafer holding portion for horizontally holding the wafer, a linear nozzle held above the wafer holding portion for supplying the developing solution onto the wafer while moving in a predetermined horizontal direction, and a resistance bar for imparting discharge resistance to the developing solution discharged from the linear nozzle. This allows all discharge ports to discharge the developing solution uniformly, especially even when discharge pressure for the developing solution to be supplied is low in development of a scan method using a linear nozzle or a slit nozzle.

Abstract: An apparatus and a method for mounting a wafer and etching a wafer backside in an etchant solution are provided. The apparatus is constructed by a first circular disc that has a first sidewall integrally formed, a gas inlet in the first circular disc or the first sidewall, a second circular disc that has a second sidewall integrally formed for positioning inside the first circular disc and forming a first cavity therein between, a third circular disc that has a third sidewall integrally formed for positioning inside the second circular disc and forming a second cavity therein between, a gas outlet in the second circular disc for withdrawing air from the second cavity, and sealing means positioned on top of the sidewalls for providing a substantially sealed second cavity when a wafer is positioned on top of the sidewalls.

Abstract: An apparatus for supplying chemicals in a chemical mechanical polishing (CMP) process includes a plurality of chemical solution supply sources for supplying different chemical solutions in a pump-less manner by using a pressure applied at the chemical solution supply sources, each supply source having an associated feed line, re-circulating line, and means for measuring and controlling flow rates of the chemical solutions supplied through the feed lines. The chemical solutions are delivered via a plurality of delivery lines to a mixer, thereby providing a mixed chemical solution to a chemical injection part of a polishing apparatus. Each means for measuring and controlling flow rates is mounted in the feed lines.

Abstract: A polishing method comprising mechanically polishing the surface of a metal film by the use of a polishing solution comprising an oxidizer, a substance which renders an oxide water-soluble, a thickener and water, is suitable for polishing the metal film at a high removal rate with suppressed scratching, delamination, dishing and erosion, and can be applied to production of semiconductors, etc.

Abstract: A substrate processing apparatus injects gas from an injection port formed on a shielding surface of an atmosphere shielding part and sucks a substrate by Bernoulli effect. The substrate is sucked in a state coming into contact with a contact supporting surface of a support member provided on the atmosphere shielding part, and rotated with the upper surface shielded by a shielding surface of the shielding part. A solution supply part supplies a chemical solution to the lower surface of the substrate. Therefore, mist of a processing solution or the processing solution can be reliably prevented from reaching the upper surface of the substrate. Thus provided is a substrate processing apparatus capable of reliably preventing the mist of the processing solution or the processing solution from reaching the upper surface of the substrate.

Abstract: Disclosed is an improved apparatus for holding a bubble plate of an etching apparatus, in place with a cylinder, which is applicable to a glass substrate etching process, in order to facilitate changing and cleaning of the as bubble plate in a short period of time, as well as to prevent a low-quality etching and damage of the glass substrate caused by displacement of cassette guides in the etching apparatus. The etching apparatus according to the invention includes an etching bath having an etching solution, a plurality of cassette guides on a bottom surface of the etching bath, a cylinder on an external side of the etching bath, a plurality of plungers on the cylinder and the cassette guides, and a bubble plate fixed by the cassette guides.

Abstract: A method of producing a semiconductor device having a multilayered wiring conductors and a system for producing the same. The nonuniformity of SOG coating film effectively suppressed and various treatments are simple and less time-consuming. A wiring conductor is formed on a semiconductor substrate, and an insulating layer covering the wiring conductor and the semiconductor substrate is formed, and the insulating layer is then subjected to a wet etching prior to the formation of SOG layer, thereby to increase a wettabiltity by the coating solution on the insulating layer.

Abstract: The present invention generally provides an improved apparatus and method for removing an edge bead from a substrate. The apparatus includes a processing chamber having an edge bead removal fluid distribution system positioned therein and a substrate support member positioned in the processing chamber proximate the fluid distribution system. The substrate support member generally includes an upper substrate support surface having a plurality of fluid dispensing apertures formed therein, at least three capillary ring support posts radially positioned about a perimeter of the upper substrate support surface, and a annular capillary ring having a planar upper surface rigidly mounted to the capillary ring support posts.

Abstract: The present invention provides an apparatus for removing an edge bead from a substrate. The apparatus includes a substrate support member, a plurality of mounting posts positioned along a perimeter of the substrate support member, and a rigid annular capillary ring mounted to the plurality of mounting posts. The rigid annular capillary ring includes a substantially planar upper capillary surface and is configured to maintain the substantially planar capillary surface when attached to the mounting posts.

Abstract: Apparatuses (10, 100), and methods of using same, for the simultaneous thinning of the backside surfaces of a plurality of semiconductor wafers (W) using a non-crystallographic and uniform etching process, are described. The apparatuses (10, 100) include a fixture (12, 102) having a plurality of horizontal receptacles (14, 16, 18, 20, 104, 106, 108, 110) for receiving the semiconductor wafers (W). The loaded fixtures (12, 102) are then immersed into an etchant solution (36, 146) that is capable of isotropically removing a layer of semiconductor material from the backside surface of the semiconductor wafers (W). The etchant solution (36, 146) is preferably heated to about 40° C.-50° C. and constantly stirred with a magnetic stirring bar (48, 158). Once a sufficient period of time has elapsed, the thinned semiconductor wafers (W) are removed from the etchant solution (36, 146).

Abstract: There is provided a grating fabrication device and method to form gratings on a semiconductor substrate. The substrate is loaded into a reactor filled with an etchant solution, and an array of parallel light of interference light with different periods is projected onto the substrate to etch the portion of the substrate that is exposed to the light via an oxidation-reduction reaction. At the same time, the inclination angle of the substrate is selectively varied to obtain the different grating periods.

Abstract: An annular receptacle is described, particularly for a rotating carrier for receiving a disk-shaped object such as a semiconductor.

Abstract: Method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of abrasive particles which contact the wafer surface in combination with a reactive liquid solution essentially free of abrasive particles wherein the ionic strength of the solution is changed to effect a change in polishing.

Abstract: A method of processing specimens, an apparatus therefor, and a method of manufacture of a magnetic head are provided wherein a complicated conventional post processing step for removing corrosion products is eliminated by a corrosion prevention processing for removing only a residual chlorine compound produced in the gas plasma etching. More specifically, the method is comprised of the steps of: forming a lamination film including a seed layer made of NiFe alloy, an upper magnetic pole made of NiFe alloy connected to the seed layer, a gap layer made of oxide film in close contact with the seed layer, and a shield layer made of NiFe alloy in close contact with the gap layer; plasma-etching the seed layer with a gas which contains chlorine using the upper magnetic pole as a mask; and after that removing the residual chlorine compound by a plasma post treatment with a gas plasma which contains H2O or methanol.

Abstract: A device for etching the backside of a wafer is disclosed. The etching device directly feeds an etchant to a target wafer without using any medium, such as a conventional absorption fabric, thus uniformly etching the backside of the wafer, and prevents the wafer from coming into contact with the etchant during the removal of the wafer from the device, thus almost completely protecting the wafer from any damage. This etching device consists of a cylindrical housing having a conical bottom wall and an annular etching dam seated in the housing while forming an etchant collecting chamber and an etching bat An etchant supply unit is provided on the conical bottom wall of the housing. At least one first etchant discharging part communicates the etching bath with the collecting chamber, while at least one second etchant discharging part communicates the etchant collecting chamber with the outside.

Abstract: An apparatus and associated method for removing deposits from a substrate. In one aspect, a system is provided which supplies etchant to an edge bead removal chamber. The apparatus includes an etchant delivery system, an etchant tank, a sensor, and a mixing tank.

Abstract: A wafer protected by a protective film on a first surface is mounted on a base member. An etching bath cylinder, to which a gasket for sealing the periphery of the wafer on a second surface that is opposite to the first surface is attached, is placed on the wafer. An etching chamber is formed by vacuum chucking with a vacuum chuck cylinder in an etching pot. Nitrogen gas is supplied from a high pressure gas supply source to a hermetic room, which is formed by the base member and the wafer, while being regulated by a pressure regulator. The pressure regulator includes a water reservoir, a decompressing room having an orifice, a first balance tube, and a second balance tube. The wafer is etched while a pressure higher than that applied to the second surface from an etchant is put on the protective film by the nitrogen gas.

Abstract: A method of forming a buried wiring comprising the steps of: (A) forming a wiring and a first insulating layer filled between the wirings on a substratum, (B) immersing the first insulating layer in a fluid which can dissolve the first insulating layer, to dissolve the first insulating layer into the fluid, (C) substituting, for the fluid, a raw material solution containing a raw material for forming a second insulating layer, without bringing the wiring into contact with a gas, and (D) filling a second insulating layer formed by gelation in the raw material solution at least between the wirings, and then, drying off the raw material solution, thereby to form the second insulating layer at least between the wirings.