Abstract: In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.

Abstract: The present invention is to provide an electromagnetic wave detecting element that can suppress the trapping of charges in a semiconductor layer. Plural lower electrodes, which collect charges generated in the semiconductor layer, are each provided to cover at least a portion in a length direction and the entire region in a width direction of a scan line adjacent thereto, and the lower electrodes are disposed at positions at which the scan lines are provided.

Abstract: A solar cell according to the present invention includes: a photoelectric conversion part having a photoelectric converting function; and a collector electrode provided at a side of a light-receiving surface of the photoelectric conversion part in a way that parts of the light-receiving surface are exposed. Interconnection tabs are connected at a side of a light-receiving surface of the collector electrode with an adhesive being interposed in between. The collector electrode contains a thermosetting first resin, an conductive material and a second resin for forming a sea-island structure between the second resin and the first resin. The collector electrode includes an internal region in the inside, a concentration ratio of the second resin to the first resin being higher in the internal region than in the surface region at the side of either the adhesive or the photoelectric conversion part.

Abstract: A broadband radiation detector includes a first layer having a first type of electrical conductivity type. A second layer has a second type of electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region. A third layer has the second type of electrical conductivity type and an energy bandgap responsive to radiation in a second spectral region comprising longer wavelengths than the wavelengths of the first spectral region. The broadband radiation detector further includes a plurality of internal regions. Each internal region may be disposed at least partially within the third layer and each internal region may include a refractive index that is different from a refractive index of the third layer. The plurality of internal regions may be arranged according to a regularly repeating pattern.

Abstract: It is an object of the present invention to provide a solid-state imaging device that can achieve a high sensitivity, finer pixels for increasing the number of pixels, a high-speed operation, and high image quality, and a method for manufacturing the same. There are provided a plurality of photoelectric conversion portions arranged in a matrix on a substrate, a vertical transfer channel arranged between vertical columns of the photoelectric conversion portions, a plurality of vertical transfer electrodes for transferring a charge of the photoelectric conversion portions to the vertical transfer channel, a light-shielding film that is laminated on the vertical transfer electrodes via a first insulating film and has a plurality of window portions, each defining a light-receiving portion of each of the photoelectric conversion portions, and a shunt wiring that is arranged in a region overlapping the vertical transfer channel and is insulated from the light-shielding film by a second insulating film.

Abstract: A photovoltaic apparatus includes a first photoelectric conversion portion so formed on an insulating surface of a substrate as to cover a first substrate electrode and a second substrate electrode isolated from each other by a first groove, a second photoelectric conversion portion formed on the surface of the first photoelectric conversion portion through a conductive intermediate layer, a first back electrode and a second back electrode formed on the surface of said second photoelectric conversion portion and a connecting passage portion for electrically connecting the first substrate electrode and the second back electrode, provided at a prescribed interval from the side surface of said intermediate layer.

Abstract: The present invention according to one preferred embodiment provides a thermoelectric element device comprising a first electrode including an electrode member, an elastic member that has electrically conductive and is provided on the electrode member, and a heat uniforming member that has electrically conductive and is provided on the elastic member; a thermoelectric element that is made of a thermoelectric material having thermoelectric effect and arranged on the first electrode so as to contact the heat uniforming member; and a second electrode arranged on the thermoelectric element.

Abstract: An image sensor may comprise circuitry, a first lower electrode, a photodiode, an upper electrode, a second lower electrode, and an upper interconnection. The circuitry may comprise a first lower interconnection and a second lower interconnection over a dielectric of a substrate. The first lower electrode, the photodiode, and the upper electrode may be sequentially formed over the first lower interconnection. The second lower electrode may comprise a passivation layer over the second lower interconnection. The upper interconnection may be formed over the second lower electrode and electrically connected to the upper electrode.

Abstract: To provide a photoelectric conversion element that allows connection between adjacent photoelectric conversion elements by use of an inexpensive wiring member.

Abstract: A photodiode array PD1 comprises an n-type semiconductor substrate one face of which is an incident surface of light to be detected; a plurality of pn junction-type photosensitive regions 3 as photodiodes formed on the side of a detecting surface that is opposite to the incident surface of the semiconductor substrate; and a carrier capturing portion 12 formed between adjacent photosensitive regions 3 from among the plurality of photosensitive regions 3 on the detecting surface side of the semiconductor substrate. The carrier capturing portion 12 has one or plurality of carrier capturing regions 13 respectively including pn-junctions, arranged at intervals. Thereby can be realized a semiconductor photodetector and a radiation detecting apparatus which can favorably restrain crosstalk from occurring.

Abstract: The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each of the plurality of sensor elements configured to receive light directed towards the backside surface. The method further includes forming a dielectric layer on the backside surface of the substrate, wherein the dielectric layer has a compressive stress to induce a tensile stress in the substrate. A backside illuminated semiconductor device fabricated by such a method is also disclosed.

Abstract: An image sensor device includes a semiconductor substrate having a light-sensing region, and a first and second electrode embedded within the substrate. The first and second electrode forms an array of slits, the array of slits is configured to allow a wavelength of light to pass through to the light-sensing region. A method for making an image sensor device includes providing a semiconductor substrate, forming a plurality of pixels on the semiconductor substrate, and forming a plurality of slits embedded within each of the plurality of pixels. The plurality of slits is configured to allow a wavelength of light to pass through to each of the plurality of pixels.

Abstract: A method of bonding a semiconductor structure to a substrate to effect both a mechanical bond and a selectively patterned conductive bond, comprising the steps of mechanically bonding a semiconductor structure to a substrate by means of a bonding layer; providing gaps in the bonding layer generally corresponding to a desired conductive bond pattern; providing vias though the substrate generally positioned at the gaps in the bonding layer; causing electrically conductive material to contact the semiconductor structure exposed through the vias. A device made in accordance with the method is also described.

Abstract: The invention relates to a method of producing a radiation detector comprising a photosensitive receiver (1; 30; 41) associated with a radiation converter (5) which is fixed by bonding to the photosensitive receiver (1; 30; 41). The method uses a film of adhesive (6; 61; 62) protected on each of its faces by a protective film and in carrying out the following operations in succession. A one protective film is removed. The film of adhesive (6; 61; 62) is laminated to the first element (5). The second protective film is removed. The second element (1; 30; 41) is brought into contact with the film of adhesive (6; 61; 62). The invention also relates to a tool for producing a radiation detector and to a method of employing this tool.

Abstract: Provided is an image sensor. The image sensor can include a readout circuitry on a first substrate. An interlayer dielectric is formed on the first substrate, and comprises a lower line therein. A crystalline semiconductor layer is bonded to the interlayer dielectric. A photodiode can be formed in the crystalline semiconductor layer, and comprises a first impurity region and a second impurity region. A via hole can be formed passing through the crystalline semiconductor layer and the interlayer dielectric to expose the lower line. A plug is formed inside the first via hole to connect with only the lower line and the first impurity region. A device isolation region can be formed in the crystalline semiconductor layer to separate the photodiode according to unit pixel.

Abstract: Provided is an image sensor and method for manufacturing the same. The image sensor includes a semiconductor substrate including a photodiode for each unit pixel, an interlayer insulating layer including metal lines on the semiconductor substrate, and an optical refractive part in a region of the interlayer insulating layer corresponding to the photodiode for focusing light on the photodiode. The optical refractive part can be formed by implanting impurities into the interlayer insulating layer.

Abstract: The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hybrid (MSH) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors. In experimentation with an exemplary embodiment, ultrahigh spatial resolution 4-point optoconductance measurements using Helium-Neon laser radiation reveal a strikingly large optoconductance property, an observed maximum measurement of 9460% EOC, for a 250 nm device. Such an exemplary EOC device also demonstrates specific detectivity higher than 5.06×1011 cm?Hz/W for 632 nm illumination and a high dynamic response of 40 dB making such sensors technologically competitive for a wide range of practical applications.

Abstract: A biosensor device is provided, including a first semiconductor layer formed over an interconnect structure. A plurality of detection elements are formed in the first semiconductor layer. An optical filter layer is formed over and physically contacts the first semiconductor layer. A second semiconductor layer is formed over the optical filter layer, having opposing first and second surfaces, wherein the first surface physically contacts the optical filter layer. A plurality of isolation walls are formed over the second semiconductor layer from the second surface thereof, defining a plurality of micro-wells over the second semiconductor layer, wherein the isolation walls and the second semiconductor layer comprises the same material, and the micro-wells are correspondingly arranged with the detection elements. An immobilization layer is formed over the second semiconductor layer exposed by the micro-wells and a plurality of capture molecules are formed over the immobilization layer in the micro-wells.

Abstract: An image sensor package includes an image sensor die having an active side and a backside, wherein an image sensor device region and a bond pad are provided on the active side. A through-silicon-via (TSV) structure extending through the thickness of the image sensor die is provided to electrically connect the bond pad. A multi-layer re-distributed interconnection structure is provided on the backside of the image sensor die. A solder mask or passivation layer covers the multi-layer re-distributed interconnection structure.

Abstract: Provided are embodiments of an image sensor. The image sensor can comprise a first substrate including a transistor circuit, a lower interconnection layer, an upper interconnection layer, and a second substrate including a vertical stacked photodiode. The lower interconnection layer is disposed on the first substrate and comprises a lower interconnection connected to the transistor circuit. The upper interconnection layer is disposed on the lower interconnection layer and comprises an upper interconnection connected with the lower interconnection. The vertical stacked photodiode can be disposed on the upper interconnection layer and connected with the upper interconnection through, for example, a single plug connecting a blue, green, and red photodiode of the vertical stack or a corresponding plug for each of the blue, green, and red photodiode of the vertical stack.

Abstract: A detector includes a first semiconductor substrate and a second substrate, wherein the first semiconductor substrate includes a detector element for detecting a radiation or a particle and the second substrate includes a control circuit. The detector element extends from a first main surface of the first semiconductor substrate to a second main surface of the first semiconductor substrate.

Abstract: A pixel cell having a photo-conversion device at a surface of a substrate and at least one contact area from which charge or a signal is output or received. A first insulating layer is located over the photo-conversion device and the at least one contact area. The pixel cell further includes at least one conductor in contact with the at least one contact area. The conductor includes a polysilicon material extending through the first insulating layer and in contact with the at least one contact area. Further, a conductive material, which includes at least one of a silicide and a refractory metal, can be over and in contact with the polysilicon material.

Abstract: According to one embodiment, a solid state imaging device includes a first photoelectric conversion film disposed above a semiconductor substrate, a first common electrode pattern which covers a first portion of the first photoelectric conversion film and has an opening pattern corresponding to a second portion of the first photoelectric conversion film, an insulating film which covers the first common electrode pattern and covers the second portion of the first photoelectric conversion film via the opening pattern, a pixel electrode pattern which covers the insulating film, a second photoelectric conversion film which covers the pixel electrode pattern, a second common electrode pattern which covers the second photoelectric conversion film, and a contact plug which penetrates through the insulating film and the second portion of the first photoelectric conversion film so as to electrically connect the pixel electrode pattern and the semiconductor substrate, wherein the width of the opening pattern is larger

Abstract: Provided is a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A plurality of image sensor elements are formed on the front surface of the semiconductor substrate. At least one of the image sensor elements includes a transfer transistor and a photodetector. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. In one embodiment, the gate overlies the photodetector by at least 5%.

Abstract: The invention provides a semiconductor device manufactured with a plurality of photodiodes so that it does not short circuit, and includes an opening without leakage. A second semiconductor layer (12, 16) of second conductivity type is formed on a main surface of a first semiconductor layer (10, 11) of the first conductivity type. Element-separating regions (13, 14, 15, 17) are formed at least on the second semiconductor layer to separate the device into the regions of photodiodes (PD1-PD4). A conductive layer (18) is formed on the second semiconductor layer 16 in a divided pattern that provides a segment for each photodiode and is connected to the second semiconductor layer (16) along the an outer periphery with respect to all photodiodes. An insulation layer (19, 21) is formed on the entire surface to cover conductive layer (18). An opening, which reaches the second semiconductor layer (16), is formed in the insulation layer (19, 21) in the region inside the pattern of conductive layer (18).

Abstract: A semiconductor device including a drift layer of a first conductivity type formed on a surface of a semiconductor substrate. A surface of the drift layer has a second area positioned on an outer periphery of a first area. A cell portion formed in the first area includes a first base layer of a second conductivity type, a source layer and a control electrode formed in the first base layer and the source layer. The device also includes a terminating portion formed in the drift layer including a second base layer of a second conductivity type, an impurity diffused layer of a second conductivity type, and a metallic compound whose end surface on the terminating portion side is positioned on the cell portion side away from the end surface of the impurity diffused layer on the terminal portion side.

Abstract: Silicon substrates are applied to the package structure of solid-state lighting devices. Wet etching is performed to both top and bottom surfaces of the silicon substrate to form reflecting cavity and electrode access holes. Materials of the reflecting layer and electrode can be different from each other whose preferred materials can be chosen in accordance with a correspondent function. Formation of the electrode can be patterned by an etching method or a lift-off method.

Abstract: Provided is a backside-illuminated solid-state image pickup device capable of allowing peripheral circuits to produce stable waveforms and thereby achieving image characteristics with less noise, the device including: a first-conductivity-type semiconductor layer having a first principal surface and a second principal surface opposed to the first principal surface and also having a pixel area and an analog circuit area; a first P type area formed to lie between the second principal surface and the first principal surface in the analog circuit area; a metal layer formed at least partially on the second principal surface of the first P type area; a VSS electrode electrically connected to the metal layer; a photo-conversion area formed in the pixel area and used to accumulate electric charges generated by photoelectric conversion; and a microlens provided on the second principal surface in the pixel area so as to correspond to the photo-conversion area.

Abstract: An image sensor module includes a semiconductor chip. Photodiode units are disposed in an active region of the semiconductor chip to convert light into electric signals. Pads are disposed in a peripheral region formed around the active region and the pads are electrically connected to the photodiode units. A connecting region is formed around the peripheral region. Re-distribution layers are electrically connected to respective pads and extend to the connecting region. A transparent substrate covers the photodiode units and the pads and exposes at least a portion of the re-distribution layers. Connecting layers are electrically connected to the respective re-distribution layers and extend to a top surface of the transparent substrate. Connecting members are connected to the respective connecting layers disposed on the top surface of the transparent substrate.

Abstract: An image sensor with a plurality of photodiode pixels supported by a substrate. At least one of the photodiode pixels includes a reflective element that prevents light from traveling onto an adjacent photodiode pixel. The reflective element may be a floating contact on a dielectric barrier that insulates the contact from a substrate. The reflective element may be a via that may or may not be an essential part of an electrical connection between two or more integrated devices. The reflective element may be elongated in a horizontal section parallel to the substrate to maximize the reflective surface area and thus longer than standard vias and contacts. The reflective element may be non-rectilinear. The via may be directly above but insulated from a conductor by a dielectric layer thinner than an inter-metal dielectric (IMD) thickness between interconnect layers, and may straddle one or more conductors.

Abstract: A method of making a semiconductor radiation detector includes the steps of providing a semiconductor substrate having front and rear major opposing surfaces, forming a solder mask layer over the rear major surface, patterning the solder mask layer into a plurality of pixel separation regions, and after the step of patterning the solder mask layer, forming anode pixels over the rear major surface. Each anode pixel is formed between adjacent pixel-separation regions and a cathode electrode is located over the front major surface of the substrate. The solder mask can be used as a permanent photoresist in developing patterned electrodes on CdZnTe/CdTe devices as well as a permanent reliability protection coating. The method is very robust and ensures long-term reliability, outstanding detector performance, and may be used in applications such as medical imaging and for demanding other highly spectroscopic applications.

Abstract: The uppermost metallic wiring layer in light-blocking layers constituted by multilevel metallic wiring that prevents light from impinging on areas other than the light-receiving area of a photodiode in each picture cell is used as a measurement electrode to be directly contacted with a specimen to measure electrical signals. Furthermore, in each picture cell including a circuit for reading out electrical signals collected through the measurement electrode, another circuit for reading out electrical signals generated by the photodiode is provided in an independent or shared form. This configuration enables the photodiode for optical measurements and the measurement electrode for electrical measurements to be provided in every picture cell.

Abstract: A first oxide film (102) is formed on a semiconductor substrate (101). A first nitride film (103) is formed on first gate electrode formation regions of the first oxide film (102). A plurality of first gate electrodes (104) are provided on the first nitride film (103) so as to be spaced apart from one another with a predetermined distance therebetween. A second oxide film (105) covers upper part and side walls of each of the first gate electrodes (104). A sidewall spacer (106) of a third oxide film is buried in an overhang portion generated on each side wall of each of the first gate electrodes (104) covered by the second oxide film (105). A second nitride film (107) covers the second oxide film (105), the sidewall spacer (106) and part of the first oxide film (102) located between the first gate electrodes (104). A plurality of second gate electrodes (108) are formed on at least part of the second nitride film (107) located between adjacent two of the first gate electrodes (104).

Abstract: A semiconductor is disclosed. The semiconductor may include a transparent layer having a first surface. The semiconductor may further include a first doped layer formed over the first surface of the transparent layer. The first doped layer may have a plurality of first-type metal electrodes formed thereon. The semiconductor may further include a second doped layer formed over the first surface of the transparent layer. The second doped layer may have a plurality of second-type metal electrodes formed thereon. The semiconductor may also include an active layer formed over the first surface of the transparent layer and disposed between the first doped layer and the second doped layer. The first-type metal electrodes and the second-type metal electrodes may be alternately arranged and the distances between each first-type metal electrode and its adjacent second-type metal electrodes may be substantially equal.

Abstract: According to an aspect of the invention, a solid-state image sensor having a plurality of pixels includes a plurality of lower electrode, a photoelectric conversion layer, an upper electrode, a wiring portion and a plurality of connection portions. The plurality of lower electrodes respectively corresponds to the plurality of pixels. The photoelectric conversion layer is stacked on the lower electrodes. The upper electrode is stacked on the photoelectric conversion layer. The wiring portion supplies, to the upper electrode, a voltage to generate an electric field between the upper electrode and the lower electrode. The plurality of connection portions connects the wiring portion and the upper electrode. The plurality of connection portions are disposed in a circumference region which is a region other than a sensor region in which a plurality of photoelectric conversion elements are arranged. The plurality of connection portions is disposed in a symmetrical arrangement.

Abstract: An octagonal structure of photodiodes using standard CMOS technology has been developed to serve as a de-multiplexer for spatially multiplexed fiber optic communication systems.

Abstract: A semiconductor light receiving device includes: a first semiconductor light receiving element that is provided on a semiconductor substrate and has a mesa structure having an upper electrode to be coupled to an electrode wiring of a mounting carrier and a lower electrode; a first mesa that is provided on the semiconductor substrate and has an upper electrode coupled electrically to a lower electrode of the first semiconductor light receiving element with a wiring provided on the semiconductor substrate; and a second mesa that is provided on the semiconductor substrate and has an upper electrode that has a same electrical potential as the upper electrode of the first semiconductor light receiving element when coupled to the electrode wiring on the mounting carrier.

Abstract: The invention provides an LCD panel with main slits corresponding to alignment protrusions. The gate lines are shielded by the electrode portion and do not overlap the main slits. Because the gate line and the major slits do not overlap, the liquid crystal molecule arrangement of the liquid crystal layer is not affected by the operating voltage of the gate line.

Abstract: A solar cell includes a p-type semiconductor substance, and an n-type semiconductor substance. The p-type semiconductor substance and the n-type semiconductor substance form a pn junction or a pin junction, and the p-type semiconductor substance or the n-type semiconductor substance includes a structure film having a plurality of carbon nanotubes electrically connected to each other.

Abstract: Embodiments of the invention provide a method and an apparatus for forming a photodiode. One embodiment provides a thin dielectric layer sandwiched between two metallic plates (electrodes), one or both of which are periodically patterned in one or two dimensions. The effect of the pattern is to couple incident light within some range of wavelength and/or incidence angles to surface excitations of the metal surface called surface plasmons, enhancing the electric field near the surface and resulting in dramatically increased photo-absorption and carrier generation in the dielectric layer.

Abstract: A pixel for detecting incident radiation (In) over a large area with high sensitivity and low power consumption. The pixel comprises a semiconductor substrate (1), covered by a thin insulating layer (2), on top of which a dendritic or arborescent gate structure (3) is arranged. The dendritic gate (3) is electrically connected at two or more contacts (C1, C2) with voltage sources, leading to the flow of a current and a position-dependent potential distribution in the gate (3). Due to the use of arborescent structures and various materials (31, 32), the pixel can be optimized for a certain application, in particular in terms of the electric field distribution, the RC time constant, the power consumption and the spectral sensitivity. Due to its compact size, the photo sensor can be arranged in linear or two-dimensional manner for the realization of line and area sensors.

Abstract: A solid-state imaging device includes a first wiring layer, a second wiring layer, a substrate contact, and a first contact. The arrangement of the substrate contact with respect to a light-receiving section forming a peripheral pixel is shifted, or not shifted, from the arrangement of the substrate contact with respect to a light-receiving section forming a central pixel, by a shift amount r from the peripheral portion toward the central portion. The arrangement of the first contact with respect to the light-receiving section of the peripheral pixel is shifted from the arrangement of the first contact with respect to the light-receiving section of the central pixel, by a shift amount s1 from the peripheral portion toward the central portion. The shift amount s1 is greater than the shift amount r.

Abstract: To provide a photoelectric conversion element that allows connection between adjacent photoelectric conversion elements by use of an inexpensive wiring member.

Abstract: Edge illumination photovoltaic devices based on multicomponent semiconductors and low cost methods for fabricating such devices are provided. The photovoltaic devices can find application in a variety of photovoltaic and thermophotovoltaic systems including solar concentrator based systems.

Abstract: A lateral p-i-n photodetector is provided that includes an array of vertical semiconductor nanowires of a first conductivity type that are grown over a semiconductor substrate also of the first conductivity type. Each vertically grown semiconductor nanowires of the first conductivity type is surrounded by a thick epitaxial intrinsic semiconductor film. The gap between the now formed vertically grown semiconductor nanowires-intrinsic semiconductor film columns (comprised of the semiconductor nanowire core surrounded by intrinsic semiconductor film) is then filled by forming an epitaxial semiconductor material of a second conductivity type which is different from the first conductivity type. In a preferred embodiment, the vertically grown semiconductor nanowires of the first conductivity type are n+ silicon nanowires, the intrinsic epitaxial semiconductor layer is comprised of intrinsic epitaxial silicon, and the epitaxial semiconductor material of the second conductivity type is comprised of p+ silicon.

Abstract: This invention comprises manufacture of photovoltaic cells by deposition of thin film photovoltaic junctions on metal foil substrates. The photovoltaic junctions may be heat treated if appropriate following deposition in a continuous fashion without deterioration of the metal support structure. In a separate operation, an interconnection substrate structure is provided, optionally in a continuous fashion. Multiple photovoltaic cells are then laminated to the interconnection substrate structure and conductive joining methods are employed to complete the array. In this way the interconnection substrate structure can be uniquely formulated from polymer-based materials employing optimal processing unique to polymeric materials. Furthermore, the photovoltaic junction and its metal foil support can be produced in bulk without the need to use the expensive and intricate material removal operations currently taught in the art to achieve series interconnections.

Abstract: This invention comprises manufacture of photovoltaic cells by deposition of thin film photovoltaic junctions on metal foil substrates. The photovoltaic junctions may be heat treated if appropriate following deposition in a continuous fashion without deterioration of the metal support structure. In a separate operation, an interconnection substrate structure is provided, optionally in a continuous fashion. Multiple photovoltaic cells are then laminated to the interconnection substrate structure and conductive joining methods are employed to complete the array. In this way the interconnection substrate structure can be uniquely formulated from polymer-based materials employing optimal processing unique to polymeric materials. Furthermore, the photovoltaic junction and its metal foil support can be produced in bulk without the need to use the expensive and intricate material removal operations currently taught in the art to achieve series interconnections.

Abstract: A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.

Abstract: It is to provide a vapor phase growth method in which an epitaxial layer consisting of a compound semiconductor such as InAlAs, can be grown, with superior reproducibility, on a semiconductor substrate such as Fe-doped InP. In vapor phase growth method for growing an epitaxial layer on a semiconductor substrate, a resistivity of the semiconductor substrate at a room temperature is previously measured, a set temperature of the substrate is controlled depending on the resistivity at the room temperature such that a surface temperature of the substrate is a desired temperature regardless of the resistivity of the semiconductor substrate, and the epitaxial layer is grown.

Abstract: A semiconductor device includes a through electrode penetrating a semiconductor substrate, a conductor pad formed on the through electrode and made of a conductor electrically connected to the through electrode, and an interconnection layer formed on a surface of the semiconductor substrate and electrically connected to the conductor pad.