Amorphous Semiconductor Material Patents (Class 257/52)
- With impurity other than hydrogen to passivate dangling bonds (e.g., halide) (Class 257/58)
- In array having structure for use as imager or display, or with transparent electrode (Class 257/59)
- With field electrode under or on a side edge of amorphous semiconductor material (e.g., vertical current path) (Class 257/60)
- With heavily doped regions contacting amorphous semiconductor material (e.g., heavily doped source and drain) (Class 257/61)