Abstract: The semiconductor devices may include a semiconductor substrate, and a guard ring and a crack sensing circuit on the semiconductor substrate. The semiconductor substrate may include a main chip region that is defined by the guard ring and includes the crack sensing circuit, a central portion of the main chip region surrounded by the crack sensing circuit, and a chamfer region that is in a corner portion of the main chip region and is defined by the guard ring and the crack sensing circuit. The semiconductor devices may also include at least one gate structure on the semiconductor substrate in the main chip region, a plurality of metal pattern structures on the at least one gate structure in the chamfer region, and an insulating layer on the plurality of metal pattern structures. The plurality of metal pattern structures may extend in parallel to one another and may have different lengths.

Abstract: Various thermal management devices for providing thermal management of integrated circuit chips are disclosed. In one aspect, a thermal management device is provided that has a heat spreader plate that includes mechanical connection structures to enable the heat spreader plate to mount on a first circuit board and thermally contact the integrated circuit chip when the integrated circuit chip is directly mounted on the first circuit board and to enable the heat spreader plate to mount on a second circuit board having a socket and thermally contact the integrated circuit chip when the integrated circuit chip is mounted in the socket.

Abstract: In an electronic device, an inner lead of a signal terminal includes a base member, and a film on a surface of the inner lead adjacent to a bonding surface. The film includes a metal thin film disposed on the surface of the base member and having a portion to which a bonding wire is connected, and an oxide film made of an oxide of the same metal as a metal being a main component of the metal thin film, and disposed in at least a part of a region of the metal thin film, excluding a connection region of a bonding wire. The oxide film includes an uneven oxide film having a surface with continuous asperities formed by irradiating the metal thin film with pulsed laser light. The uneven oxide film is disposed in at least a part of a front end region of the bonding surface.

Abstract: A composite electronic component includes a composite body in which a multilayer ceramic capacitor and a ceramic electronic component are coupled to each other. The multilayer ceramic capacitor includes a first ceramic body comprising dielectric layers and internal electrodes, the internal electrodes having at least one of the dielectric layers interposed therebetween; and first and second external electrodes disposed on first and second end portions of the first ceramic body. The ceramic electronic component includes a second ceramic body coupled to a lower portion of the multilayer ceramic capacitor and made of ceramic; and first and second terminal electrodes disposed on first and second end portions of the second ceramic body and connected to the first and second external electrodes, and the multilayer ceramic capacitor and the ceramic electronic component have different lengths.

Abstract: A non-magnetic lid for sealing a hermetic package. The lid includes a molybdenum substrate having a sputtered adhesion layer and a copper seed layer. The lid also includes a plated palladium solder base layer, and has a gold/tin solder preform attached to a sealing surface of the lid.

Abstract: A coupler for proximity wireless communication primarily based on an electric induction field generated therein, includes a substrate, a ground layer formed on a first region of the substrate and surrounding a second region of the substrate on three sides of the second region, a fourth side of the second region being defined by an edge of the substrate, and a coupling element electrically isolated from the ground layer and formed on the second region of the substrate. The coupling element includes a first portion that extends adjacent to and along the edge of the substrate and a second portion that is electrically connected to the first portion, extends inwardly from the edge of the substrate, and includes an inductor.

Abstract: A semiconductor package may be provided. The semiconductor package may include a first semiconductor chip and a second semiconductor chip disposed on an interconnection layer. The semiconductor package may include a heat transferring block disposed between the first and second semiconductor chips to be mounted on the interconnection layer. Related methods are also provided.

Abstract: Apparatuses and methods for providing thermal pathways from a substrate to a thermal bonding pad. The thermal pathways may be metal extensions of the thermal bonding pad that are disposed in channels formed in a backside passivation layer underneath the thermal bonding pad, and may be in direct contact with an underlying substrate. The thermal pathways may provide improved thermal dissipation from the substrate.

Abstract: An object of the present invention is to provide a circular support substrate that allows for positioning based solely on its outer periphery shape. As a means for solving the problems, a circular support substrate is provided that has at least three chords along its circumference, wherein the chords are provided at positions where they do not run linearly symmetrical to the straight line passing through the center axis of the circular support substrate.

Abstract: A semiconductor device package includes a first circuit layer, at least one electrical element, a first molding layer, an electronic component and a second molding layer. The at least one electrical element is disposed over a first surface of the first circuit layer and electrically connected to the first circuit layer. The first molding layer is disposed over the first surface of the first circuit layer. The first molding layer encapsulates an edge of the at least one electrical element, and a lower surface of the first molding layer and a lower surface of the at least one electrical element are substantially coplanar. The electronic component is disposed over a second surface of the first circuit layer and is electrically connected to the first circuit layer. The second molding layer is disposed over the second surface of the first circuit layer and encapsulates the electronic component.

Abstract: A method for manufacturing an electrical connector, including: S1: providing a bearing tray, where the bearing tray is concavely provided with multiple holding slots at intervals; S2: providing multiple solders correspondingly placed in the multiple holding slots; S3: heating the bearing tray, so as to soften the solders; S4: providing an insulating body and multiple terminals disposed at the insulating body, where each of the terminals has a soldering portion exposed from the insulating body, and moving the insulating body and the terminals entirely to the bearing tray, so that the soldering portion of each of the terminals is correspondingly inserted into a corresponding one of the softened solders; and S5: sticking the solder to the soldering portion, moving the insulating body away from above the bearing tray, and separating the solders from the bearing tray. The electrical connector has good electrical connection performance.

Abstract: Packaged semiconductor devices and packaging devices and methods are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a first integrated circuit die that is coupled to a first surface of a substrate that includes through-substrate vias (TSVs) disposed therein. A conductive ball is coupled to each of the TSVs on a second surface of the substrate that is opposite the first surface of the substrate. A second integrated circuit die is coupled to the second surface of the substrate, and a molding compound is formed over the conductive balls, the second integrated circuit die, and the second surface of the substrate. The molding compound is removed from over a top surface of the conductive balls, and the top surface of the conductive balls is recessed. A redistribution layer (RDL) is formed over the top surface of the conductive balls and the molding compound.

Abstract: An inventive semiconductor device includes: a semiconductor chip including an integrated circuit; a plurality of electrode pads provided on the semiconductor chip and connected to the integrated circuit; a rewiring to which the electrode pads are electrically connected together, the rewiring being exposed on an outermost surface of the semiconductor chip and having an exposed surface area greater than the total area of the electrode pads; and a resin package which seals the semiconductor chip.

Abstract: The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

Abstract: A placement base (100) of a semiconductor device (90) comprises a body (10) on which the semiconductor device (90) is disposed, and a fixing unit (40) for fixing the semiconductor device (90) to the body (10). The body (10) has a supporting unit (12) and a bottom surface (11) placed in an inner periphery of the supporting unit (12) and placed lower than the supporting unit (12). A difference in height ?H between the supporting unit (12) and the bottom surface (11) is larger than a sum (H1+H2) of a calculated or measured maximum upward warp H1 of the bottom surface (11) and a calculated or measured maximum downward warp H2 of a base of the semiconductor device (90).

Abstract: A placement base (100) of a semiconductor device (90) comprises a body (10), to which a radiation agent (80) having viscosity is applied and on which a semiconductor device (90) is disposed, and a protrusion (20), which is placed in an outer periphery of the body (10) and on which the semiconductor device (90) is not disposed. A detective groove (30) for introducing the radiation agent (80) is provided on a surface of the protrusion (20).

Abstract: Package on package (PoP) devices and methods of packaging semiconductor dies are disclosed. A PoP device includes a first packaged die and a second packaged die coupled to the first packaged die. Metal stud bumps are disposed between the first packaged die and the second packaged die. The metal stud bumps include a stick region, a first ball region coupled to a first end of the stick region, and a second ball region coupled to a second end of the stick region. The metal stud bumps include a portion that is partially embedded in a solder joint.

Abstract: Wafer-level packaged components are disclosed. In a wafer-level-packaged, an integrated circuit die has first contacts in an inner third region of a surface of the integrated circuit die. A redistribution layer has second contacts in an inner third region of a first surface of the redistribution layer and third contacts in an outer third region of a second surface of the redistribution layer opposite the first surface thereof. The second contacts of the redistribution layer are coupled for electrical conductivity to the first contacts of the integrated circuit die with the surface of the integrated circuit die face-to-face with the first surface of the redistribution layer. The third contacts are offset from the second contacts for being positioned in a fan-out region for association at least with the outer third region of the second surface of the redistribution layer, the third contacts being surface mount contacts.

Abstract: A semiconductor package includes a molding member, a chip embedded in the molding member to have a warped shape, and connectors disposed in the molding member. The molding member includes an extendible material which includes a first part having a warped shape, a second part extending from one end of the first part to be flat, and a third part extending from the other end of the first part to be flat, where first surfaces of the connectors are exposed at a surface of the molding member and second surfaces of the connectors are coupled to the chip.

Abstract: An electric circuit device connecting first and second external elements, the electric circuit device including: a first electronic component; a first bus bar electrically connected to the first electronic component; a second bus bar electrically connected to the electronic component and overlapped with the first bus bar in a direction perpendicular to main surfaces of the first and second bus bars; a first external terminal electrically connecting the first bus bar to the first external element; a second external terminal electrically connecting the second bus bar to the second external element; a first region in the first external terminal electrically coupled to the first external element; and a second region in the second external terminal electrically coupled to the second external element, and at least partially overlapped with the first region in the direction.

Abstract: Embodiments of the present disclosure are directed to die adhesive films for integrated circuit (IC) packaging, as well as methods for forming and removing die adhesive films and package assemblies and systems incorporating such die adhesive films. A die adhesive film may be transparent to a first wavelength of light and photoreactive to a second wavelength of light. In some embodiments, the die adhesive film may be applied to a back or “inactive” side of a die, and the die surface may be detectable through the die adhesive film. The die adhesive film may be cured and/or marked with laser energy having the second wavelength of light. The die adhesive film may include a thermochromic dye and/or nanoparticles configured to provide laser mark contrast. UV laser energy may be used to remove the die adhesive film in order to expose underlying features such as TSV pads.

Abstract: Multiple devices, including a first device and a second device, have operational circuitry and opposing first and second surfaces. First and second electrical contacts are formed at the first surface, while a third electrical contact is formed at the second surface opposite the first electrical contact. The first electrical contact is electrically connected to the operational circuitry, and the second electrical contact is electrically connected to the third electrical contact. The first device and the second device are subsequently stacked such that the first surface of the second device is located adjacent the second surface of the first device such that the first electrical contact of the second device is aligned with the third electrical contact of the first device. The first electrical contact of the second device is electrically connected to the third electrical contact of the first device.

Abstract: An inventive semiconductor device includes: a semiconductor chip including an integrated circuit; a plurality of electrode pads provided on the semiconductor chip and connected to the integrated circuit; a rewiring to which the electrode pads are electrically connected together, the rewiring being exposed on an outermost surface of the semiconductor chip and having an exposed surface area greater than the total area of the electrode pads; and a resin package which seals the semiconductor chip.

Abstract: An organic light-emitting display apparatus, including a substrate including a display region and a fan-out region outside the display region; a plurality of pixel electrodes in the display region of the substrate; a plurality of first signal lines connected electrically to the pixel electrodes in the display region in one direction and constituting a plurality of first line portions in the fan-out region; a plurality of second signal lines connected electrically to the pixel electrodes in the display region to intersect the first signal lines and constituting a plurality of second line portions in the fan-out region; and a dummy pattern between the first line portions.

Abstract: An integrated circuit package may include a first conductive pad on an interposer substrate, and a second conductive pad formed on a front surface of an integrated circuit die. The second conductive pad may directly contact the first conductive pad on the interposer substrate. The integrated circuit package may further include a package substrate having a cavity, in which the interposer substrate and the integrated circuit are disposed in the cavity. The interposer substrate may include interconnect pathways that are electrically coupled to the first and second conductive pads. A heat spreader may subsequently form over the integrated circuit die and the package substrate.

Abstract: Embodiments of the present disclosure provide an apparatus comprising a semiconductor substrate having a first surface, a second surface that is disposed opposite to the first surface, wherein at least a portion of the first surface is recessed to form a recessed region of the semiconductor substrate, and one or more vias formed in the recessed region of the semiconductor substrate to provide an electrical or thermal pathway between the first surface and the second surface of the semiconductor substrate, and a die coupled to the semiconductor substrate, the die being electrically coupled to the one or more vias formed in the recessed region of the semiconductor substrate. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure provide a semiconductor device, a semiconductor package, and a method for manufacturing a semiconductor device. The semiconductor device comprises: a semiconductor die; an electrical isolation layer formed on a surface of the semiconductor die; a substrate; and a non-conductive adhesive layer disposed between the electrical isolation layer and the substrate, so as to adhere the electrical isolation layer to the substrate.

Abstract: A semiconductor package, a semiconductor module, a method of fabricating a semiconductor package are disclosed. The semiconductor package may include a substrate, a semiconductor chip, a connection terminal, a mold layer, and a protection layer. The protection layer may be provided to cover the substrate, the connection terminal, and the mold layer. The protection layer may be removed from a lower portion of the connection terminal, and thus, the lower portion of the connection terminal may be exposed. The connection terminal may be coupled to a module substrate through the lower portion, and a result, the semiconductor module may be fabricated. The connection terminal, the substrate, and the mold layer may be prevented from being exposed to outer air or moisture, owing to the presence of the protection layer.

Abstract: A semiconductor device (1,21) includes a solid state device (2,22), a semiconductor chip (3) that has a functional surface (3a) on which a functional element (4) is formed and that is bonded on a surface of the solid state device with the functional surface thereof facing the surface of the solid state device and while maintaining a predetermined distance between the functional surface thereof and the surface of the solid state device, an insulating film (6) that is provided on the surface (2a, 22a) of the solid state device facing the semiconductor chip and that has an opening (6a) greater in size than the semiconductor chip when the surface of the solid state device facing the semiconductor chip is vertically viewed down in plane, and a sealing layer (7) that seals a space between the solid state device and the semiconductor chip.

Abstract: The described embodiments of mechanisms of forming a package on package (PoP) structure involve bonding with connectors with non-solder metal balls to a packaging substrate. The non-solder metal balls may include a solder coating layer. The connectors with non-solder metal balls can maintain substantially the shape of the connectors and control the height of the bonding structures between upper and lower packages. The connectors with non-solder metal balls are also less likely to result in bridging between connectors or disconnection (or cold joint) of bonded connectors. As a result, the pitch of the connectors with non-solder metal balls can be kept small.

Abstract: An electronic component module includes a substrate, an electronic component mounted on the substrate, and a resin sealing portion that seals the electronic component and covers a principal surface of the substrate. The resin sealing portion includes a film-shaped resin layer that covers upper and side surfaces of the electronic component and the principal surface of the substrate, and an embedding resin layer that covers the film-shaped resin layer. The embedding resin layer has a smaller coefficient of linear expansion than that of the film-shaped resin layer. A portion of the film-shaped resin layer covering the side surfaces has a smaller thickness than either of a thickness of a portion of the film-shaped resin layer covering the upper surface and a thickness of a portion of the film-shaped resin layer covering the principal surface.

Abstract: An integrated device die and package is disclosed. The integrated device die includes a unitary body. The unitary body can have an upper portion comprising one or more active components. The upper portion can have first and second opposing lateral sides defining at least a portion of a periphery of the upper portion such that an upper surface of the upper portion is disposed between upper edges of the first and second opposing lateral sides. The unitary body can also have a lower portion monolithically formed with the upper portion. The lower portion can comprise a pedestal extending downwardly from the upper portion. The pedestal can be laterally inset from lower edges of the first and second opposing lateral sides. The pedestal can include a distal end portion configured to couple to a carrier.

Abstract: A terminal pressing frame of a semiconductor device is disposed so as to form a first gap partially from the bottom surface of an L-shaped leg portion of an external terminal and a second gap from an inside surface of a resin case. Adhesive spreads to the second gap and further spreads to the first gap connected to the second gap, consequent to the pressure when a metal base is assembled. The spreading of the adhesive to the first gap fixes an L-shaped leg portion of the external terminal and the terminal pressing frame to each other; and the spreading of adhesive to the second gap fixes the resin case and the terminal pressing frame to each other.

Abstract: A printed substrate includes: a substrate; a copper layer formed on the substrate; and a resin formed on the substrate to cover a part of the copper layer, wherein the copper layer includes a first region covered by the resin and a second region in which a shield sheet metal is installed, the shield sheet metal surrounding a predetermined region of the substrate, and wherein an angle formed between an outer edge portion of the copper layer covered by the resin and an outer edge portion of the resin which covers the copper layer at a location at which the outer edge portion of the copper layer and the outer edge portion of the resin intersect each other as viewed in plan is an obtuse angle.

Abstract: Packaging devices, methods of manufacture thereof, and packaging methods are disclosed. In some embodiments, a packaging device includes a first substrate including a post passivation interconnect (PPI) structure including a PPI pad disposed thereon, and a second substrate including a contact pad disposed thereon. A conductive bump is coupled between the PPI pad and the contact pad. A molding material is disposed over portions of the PPI structure proximate the conductive bump. A top surface of the molding material contacts the conductive bump at a height of the conductive bump having a width C, and the contact pad has a width B. A ratio R of C:B comprises about 1.0 or greater.

Abstract: In a method of manufacturing a module board, an electronic component is mounted on a first principal surface of a small board. A cavity defining a through hole is formed in a core board. The electronic component is housed in the cavity by mounting the small board on a surface electrode arranged around the cavity. Resin layers are formed on both principal surfaces of the core board, and resin flows through a gap between the core board and the small board. Hence, the inside of the cavity is filled with the resin, and the electronic component is sealed with the resin.

Abstract: A semiconductor device of the present invention includes: a first substrate (1) on which a power semiconductor element (2) is mounted; a heat-dissipating plate (12); an insulating layer (11) disposed between the first substrate (1) and the heat-dissipating plate (12); and molding resin (4) that molds the first substrate (1), the heat-dissipating plate (12), and the insulating layer (11). The heat-dissipating plate (12) has a first surface opposite to the insulating layer (12), the first surface being exposed from the molding resin (4). The insulating layer (11) has a curved area (11a) that is curved to the first surface and an end that is located in the molding resin (4).

Abstract: A semiconductor assembly is described. In accordance with one example of the invention, the semiconductor assembly comprises a semiconductor body, a top main electrode arranged on a top side, a bottom main electrode arranged on an underside, and a control electrode arranged on the top side. The semiconductor assembly further includes a spring element for the pressure contacting of the control electrode with a pressure force generated by the spring element.

Abstract: A housing component, for example a housing which accommodates electronics, such as a transmission control has a plurality of feedthroughs and a flatness zone. The housing component has a recess area in the region of the flatness zone. The housing component is reinforced through the recess and the flatness zone, which is disposed in the region of the recess, has a deviation from flatness of ?0.1 millimeter (mm), for example in the range of 0.005 mm to 0.02 mm per 10 mm length.

Abstract: A semiconductor device composed of a plurality of semiconductor modules exhibiting a large current carrying capacity for a semiconductor device as a whole is disclosed. The connection between the plurality of semiconductor modules is conducted by means of optimum construction suited to the semiconductor device. The device comprises a semiconductor module having externally connecting terminals protruding out of a casing, bus bars electrically connecting the specific externally connecting terminals of the plurality of semiconductor modules arranged in parallel with each other, and a semiconductor module case covering and fastening the plurality of semiconductor modules connected with the bus bars. The bus bars and the externally connecting terminals of the semiconductor modules are joined by means of laser welding.

Abstract: A method of controlling temperature in a semiconductor device that includes a stacked device configuration is disclosed. The method includes providing a Peltier element having a metal-based heat sink formed above a first substrate of the stacked device configuration and a metal-based heat source formed above a second substrate of the stacked device configuration, and establishing a current flow through the Peltier element when the semiconductor device is in a specified operating phase.

Abstract: A chip package and a packaging method are provided, which relates to the field of communications technologies, and is invented to implement high-frequency electromagnetic interference shielding and effectively improve chip performance. The package includes a package substrate and a metal cap covering the package substrate, where a silicon chip placement area is arranged on an upper surface of the package substrate, multiple first conductive parts are arranged in a peripheral area of the silicon chip placement area, and an edge of the metal cap is in contact with the package substrate and electrically connected to the multiple first conductive parts, where at least a portion of first conductive parts in the multiple first conductive parts are electrically connected to a grounding part by using the metal cap, and the grounding part is arranged on the package substrate, and configured to ground the package substrate.

Abstract: An alignment adjusting mechanism for a probe card includes a frame, a substrate and positioning screws. The frame has an opening, an inner periphery wall surrounding around the opening, and an outer periphery wall corresponding to the inner periphery wall. The substrate is disposed in the opening and supported by a support flange extending from the inner periphery wall toward a center of the opening. The frame is provided with a plurality of positioning threaded holes each extending from the outer periphery wall to the inner periphery wall in communication with the opening. Each positioning screw is threaded into one of the positioning threaded holes and has an end stopped at a lateral side of the substrate. By turning the positioning screws, the planimetric position of the substrate on an imaginary plane is adjustable.

Abstract: Provided are a wafer level package and a manufacturing method thereof. The wafer level package method includes preparing a patterned wafer, forming a recess in a position, in which a semiconductor chip is to be attached, of the patterned wafer through an etching process, fixing the semiconductor chip to the interior of the recess, and applying a passivation material to portions other than the semiconductor chip within the recess and to an upper end of the wafer. The wafer level package includes a silicon or glass wafer including a recess formed through etching and having an area larger than a semiconductor chip, a semiconductor chip fixed to the interior of the recess, and a passivation material filling an empty space other than the semiconductor chip within the recess and applied to a portion corresponding to an area larger than the semiconductor chip on an upper end of the wafer.

Abstract: A portable apparatus, an IC packaging structure, an IC packaging object, and an IC packaging method thereof are disclosed. The IC packaging structure includes an IC packaging object and a substrate. The packaging object includes a die and a metallurgy layer. The die has a contact portion, a saw reserved portion, and a seal ring. The seal ring is disposed between the contact portion and the saw reserved portion. The metallurgy layer is disposed on the contact portion. At least a part of the metallurgy layer overlaps the seal ring. The metallurgy layer includes a solderable layer coated by a solder paste. The substrate includes a solder pad. The solder pad is coupled to the solderable layer coated by the solder paste.

Abstract: A method of manufacturing a printed circuit board includes: supplying solder paste so as to be offset from an electrode pad of a printed wiring board; flowing the solder paste during melting; and forming a region that is not covered with solder resist on the outer peripheral region adjacent to the electrode pad of the printed wiring board to which solder paste is supplied, thereby increasing a gap between a semiconductor package and the printed wiring board to prevent separation of the solder.

Abstract: A semiconductor device has a first substrate with a plurality of first conductive vias formed partially through the first substrate. A first semiconductor die is mounted over the first substrate and electrically connected to the first conductive vias. A plurality of bumps is formed over the first substrate. A second substrate has a plurality of second conductive vias formed partially through the second substrate. A penetrable encapsulant is deposited over the second substrate. The second substrate is mounted over the first substrate to embed the first semiconductor die and interconnect structure in the penetrable encapsulant. The encapsulant can be injected between the first and second substrates. A portion of the first substrate is removed to expose the first conductive vias. A portion of the second substrate is removed to expose the second conductive vias. A second semiconductor die is mounted over the second substrate.

Abstract: Aspects of the invention provide a semiconductor module that can be manufactured without using a bending jig for bearing the stress in bending process of the terminal and scarcely generates cracks in the resin parts of the semiconductor module. In some aspects of the invention, a semiconductor module can include a casing made of a resin material accommodating a semiconductor chip, a terminal one end of which is electrically connected to the semiconductor chip and the other end of which is projecting out of the casing and bent and a lid made of a resin material fitted on an opening of the casing, a part of end region of the lid being in contact with the terminal and being a thick part with a thickness thicker than a thickness of other parts of the lid.

Abstract: A semiconductor device includes a ball grid array (BGA) package including first bumps. A first semiconductor die is mounted to the BGA package between the first bumps. The BGA package and first semiconductor die are mounted to a carrier. A first encapsulant is deposited over the carrier and around the BGA package and first semiconductor die. The carrier is removed to expose the first bumps and first semiconductor die. An interconnect structure is electrically connected to the first bumps and first semiconductor die. The BGA package further includes a substrate and a second semiconductor die mounted, and electrically connected, to the substrate. A second encapsulant is deposited over the second semiconductor die and substrate. The first bumps are formed over the substrate opposite the second semiconductor die. A warpage balance layer is formed over the BGA package.

Abstract: A fusible switch assembly including a line base assembly and load base assembly is disclosed. Line base assembly includes a low-profile fuse clip assembly and line bus connector assembly with single-piece connector body and sliding nuts. Load base assembly includes a fuse clip and lug assembly having a lug body including a multiple lugs and a fuse clip at least partially formed by the lug body. Line base assemblies, load base assemblies, fuse clip assemblies, line bus connector assemblies, fuse clip and lug assemblies, and methods of operating line base assemblies are provided, as are other aspects.