Thin Film Unipolar Transistor (epo) Patents (Class 257/E21.411)
  • Patent number: 10396236
    Abstract: Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: August 27, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Miyuki Hosoba, Suzunosuke Hiraishi
  • Patent number: 10355086
    Abstract: A semiconductor device includes a fin patterned in a substrate; a gate disposed over and substantially perpendicular to the fin; a pair of epitaxial contacts including a III-V material over the fin and on opposing sides of the gate; and a channel region between the pair of epitaxial contacts under the gate comprising an undoped III-V material between doped III-V materials, the doped III-V materials including a dopant in an amount in a range from about 1e18 to about 1e20 atoms/cm3 and contacting the epitaxial contacts.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: July 16, 2019
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES, INC., STMICROELECTRONICS, INC.
    Inventors: Xiuyu Cai, Qing Liu, Kejia Wang, Ruilong Xie, Chun-Chen Yeh
  • Patent number: 10297688
    Abstract: Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes forming a semiconductor fin on a source/drain region, forming a liner including a first dielectric material along sidewalls of the semiconductor fin and along sidewalls of the source/drain region, forming a second dielectric material along sidewalls of the liner including the first dielectric material, and removing the liner including the first dielectric material from sidewalls of the semiconductor fin. Removing the liner including the first dielectric material includes exposing portions of the source/drain region. The method further includes forming a spacer layer on the second dielectric material and portions of the source/drain region exposed by removing the liner including the first dielectric material and forming a gate material on the spacer layer.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: May 21, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kangguo Cheng, Xin Miao, Philip J. Oldiges, Wenyu Xu, Chen Zhang
  • Patent number: 10170715
    Abstract: The invention relates to a method for producing a vertical organic field-effect transistor, in which a vertical organic field-effect transistor with a layer arrangement is produced on a substrate, said layer arrangement including transistor electrodes, namely a first electrode (23; 24), a second electrode (23; 24) and a third electrode (32), electrically insulating layers (25; 34) and an organic semiconductor layer (28). In addition, a vertical organic field-effect transistor is provided, which includes a layer arrangement with transistor electrodes on a substrate (21).
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: January 1, 2019
    Assignee: Novaled GmbH
    Inventors: Hans Kleemann, Gregor Schwartz
  • Patent number: 10134601
    Abstract: Embodiments herein describe techniques for forming a zinc oxide mask used when performing RIE. In one embodiment, the zinc oxide mask is near-amorphous which means the zinc oxide has a grain size that is less than 50 nanometers. In contrast, metal masks such as aluminum, chromium, and titanium have a less robustness to RIE process. When performing RIE, the edges of these RIE masks can form pits or holes which harm the features of the underlying substrate. However, a near-amorphous zinc oxide RIE mask is less susceptible to pitting, and thus, can improve the geometry of the etched features.
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: November 20, 2018
    Assignee: International Business Machines Corporation
    Inventors: Joel P. De Souza, Yun Seog Lee, Devendra K. Sadana
  • Patent number: 10121903
    Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: November 6, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasutaka Nakazawa, Masami Jintyou, Junichi Koezuka, Kenichi Okazaki, Takuya Hirohashi, Shunsuke Adachi
  • Patent number: 10002762
    Abstract: Multi-angled deposition and masking techniques are provided to enable custom trimming and selective removal of spacers that are used for patterning features at sub-lithographic dimensions. For example, a method includes forming a sacrificial mandrel on a substrate, and forming first and second spacers on opposing sidewalls of the sacrificial mandrel. The first and second spacers are formed with an initial thickness TS. A first angle deposition process is performed to deposit a material (e.g., insulating material or metallic material) at a first deposition angle A1 to form a first trim mask layer on an upper portion of the first spacer and the sacrificial mandrel while preventing the material from being deposited on the second spacer. A spacer etch process is performed to trim the first spacer to a first thickness T1, which is less than TS, using the first trim mask layer as an etch mask.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: June 19, 2018
    Assignee: International Business Machines Corporation
    Inventors: Marc A. Bergendahl, Sean D. Burns, Lawrence A. Clevenger, Christopher J. Penny, Michael Rizzolo
  • Patent number: 10002934
    Abstract: A semiconductor device includes a first planar semiconductor (e.g., silicon) layer, first and second pillar-shaped semiconductor (e.g., silicon) layers, a first gate insulating film, a first gate electrode, a second gate insulating film, a second gate electrode, a first gate line connected to the first and second gate electrodes, a first n-type diffusion layer, a second n-type diffusion layer, a first p-type diffusion layer, and a second p-type diffusion layer. A center line extending along the first gate line is offset by a first predetermined amount from a line connecting a center of the first pillar-shaped semiconductor layer and a center of the second pillar-shaped semiconductor layer.
    Type: Grant
    Filed: January 22, 2015
    Date of Patent: June 19, 2018
    Assignee: Unisantis Electronics Singapore Pte. Ltd.
    Inventors: Fujio Masuoka, Nozomu Harada, Hiroki Nakamura
  • Patent number: 9947793
    Abstract: Disclosed is a method of forming a vertical pillar-type field effect transistor (FET). One or more semiconductor pillars are formed by epitaxial deposition in one or more openings, respectively, that extend through a first dielectric layer and that have high aspect ratios in two directions. The first dielectric layer is etched back and the following components are formed laterally surrounding the semiconductor pillar(s): a first source/drain region above and adjacent to the first dielectric layer, a second dielectric layer on the first source/drain region, a gate on the second dielectric layer and a gate cap on the gate. The gate cap extends over the top surface(s) of the semiconductor pillar(s). A recess is formed in the gate cap to expose at least the top surface(s) of the semiconductor pillar(s) and a second source/drain region is formed within the recess. Also disclosed is the vertical pillar-type FET structure.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: April 17, 2018
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Ruilong Xie, Kangguo Cheng, Tenko Yamashita
  • Patent number: 9923099
    Abstract: A method for manufacturing a thin-film transistor (TFT) is provided, including the following steps. A gate is formed on a substrate. A gate insulating layer is formed on the gate. A patterned semiconductor layer is formed on the gate insulating layer. A source is formed on the patterned semiconductor layer. The peripheral portion of the source is oxidized to form an oxide layer, wherein the oxide layer covers the source and a portion of the patterned semiconductor layer. A protective layer and hydrogen ions are formed, wherein the protective layer covers the oxide layer and the patterned semiconductor layer. The patterned semiconductor layer not covered by the oxide layer is doped with the hydrogen ions to form a drain. A TFT is also provided.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: March 20, 2018
    Assignee: CHUNGHWA PICTURE TUBES, LTD.
    Inventors: Chin-Tzu Kao, Ya-Ju Lu, Hsiang-Hsien Chung, Wen-Cheng Lu
  • Patent number: 9876039
    Abstract: A thin-film transistor substrate constituting a liquid crystal display includes: a thin-film transistor including, a gate electrode, a gate insulating film covering the gate electrode, a semiconductor layer opposing the gate electrode via the gate insulating film, a channel protective film covering the semiconductor layer, a protective film covering over the channel protective film, source and drain electrodes in contact with the semiconductor layer through first contact holes penetrating through the protective film and the channel protective film; a first electrode electrically connected to the drain electrode; a gate wiring extending from the gate electrode; and a source wiring electrically connected to the source electrode. The source wiring and first electrode are respectively electrically connected to the source electrode and drain electrode through respective second contact holes penetrating through the protective film.
    Type: Grant
    Filed: January 5, 2016
    Date of Patent: January 23, 2018
    Assignee: Mitsubishi Electric Corporation
    Inventors: Rii Hirano, Naoki Nakagawa, Takaaki Murakami, Kazunori Inoue, Koji Oda
  • Patent number: 9818775
    Abstract: An array substrate, a manufacturing method thereof, a display device, a thin-film transistor (TFT) and a manufacturing method thereof are disclosed. The method for manufacturing the TFT comprises: forming a pattern of an active layer and a gate insulating layer provided with a metal film on a base substrate; patterning the metal film by one patterning process, and forming patterns of a gate electrode, a source electrode, a drain electrode, a gate line and a data line; forming a passivation layer on the base substrate; patterning the passivation layer by one patterning process, and forming a source contact hole, a drain contact hole and a bridge structure contact hole; and forming a transparent conductive film on the base substrate, and removing partial transparent conductive film to form a source contact portion, a drain contact portion (214), a pixel electrode and a bridge structure. The manufacturing method can reduce the number of the patterning processes.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: November 14, 2017
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Chunping Long, Jang Soon Im, Chien Hung Liu
  • Patent number: 9685540
    Abstract: A semiconductor device includes an active region with a first gate trench formed when a gate region is etched to a first depth, a device isolation film defining the active region and including a second gate-trench formed when a gate region is etched to a second depth, a gate buried below the first gate trench and the second gate trench, and a source plug and a drain plug formed when a conductive material is deposited in a source region and a drain region of the active region.
    Type: Grant
    Filed: June 23, 2016
    Date of Patent: June 20, 2017
    Assignee: SK HYNIX INC.
    Inventor: Kang Yoo Song
  • Patent number: 9620479
    Abstract: A first semiconductor structure including a first bonding oxide layer having a metal resistor structure embedded therein and a second semiconductor structure including a second bonding oxide layer having a metallic bonding structure embedded therein are provided. A nitride surface treatment process is performed to provide a nitrided surface layer to each structure. Each nitrided surface layer includes nitridized oxide regions located in an upper portion of the bonding oxide layer and nitridized metallic regions located in an upper portion of either the metal resistor structure or the metallic bonding structure. The nitrogen within the nitridized metallic region located in the upper portion of the metallic bonding structure is then selectively removed to restore the upper portion of the metallic bonding structure to its original composition. Bonding is then performed to form a dielectric bonding interface and a metallic bonding interface between.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: April 11, 2017
    Assignee: International Business Machines Corporation
    Inventors: Daniel C. Edelstein, Chih-Chao Yang
  • Patent number: 9601606
    Abstract: An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: March 21, 2017
    Assignee: International Business Machines Corporation
    Inventors: Alan B. Botula, Max L. Lifson, James A. Slinkman, Theodore G. Van Kessel, Randy L. Wolf
  • Patent number: 9552985
    Abstract: The invention provides an oxide semiconductor layer that has less cracks and is excellent in electrical property and stability, as well as a semiconductor element and an electronic device each including the oxide semiconductor layer. The invention provides an exemplary method of producing an oxide semiconductor layer, and the method includes the precursor layer forming step of forming, on or above a substrate, a layered oxide semiconductor precursor including a compound of metal to be oxidized into an oxide semiconductor dispersed in a solution including a binder made of aliphatic polycarbonate, and the annealing step of heating the precursor layer at a first temperature achieving decomposition of 90 wt % or more of the binder, and then annealing the precursor layer at a temperature equal to or higher than a second temperature (denoted by X) that is higher than the first temperature, achieves bonding between the metal and oxygen, and has an exothermic peak value in differential thermal analysis (DTA).
    Type: Grant
    Filed: July 4, 2014
    Date of Patent: January 24, 2017
    Assignees: JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, SUMITOMO SEIKA CHEMICALS CO., LTD.
    Inventors: Satoshi Inoue, Tatsuya Shimoda, Tomoki Kawakita, Nobutaka Fujimoto, Kiyoshi Nishioka
  • Patent number: 9466756
    Abstract: An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer.
    Type: Grant
    Filed: July 9, 2013
    Date of Patent: October 11, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi Okazaki, Hotaka Maruyama
  • Patent number: 9425061
    Abstract: The present disclosure relates to method of forming a MIM (metal-insulator-metal) structure having a buffer cap layer that reduces stress induced by an overlying stress-inducing protective layer, and an associated apparatus. The method is performed by forming a lower conductive layer over a semiconductor substrate, forming a dielectric layer over the lower conductive layer, and forming an upper conductive layer over the dielectric layer. A buffer cap layer is formed over the upper conductive layer and a stress-inducing protective layer is formed onto the buffer cap layer. The buffer cap layer reduces a stress induced onto the upper conductive layer by the stress-inducing protective layer, thereby reducing leakage current between the lower and upper conductive layers.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: August 23, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yao-Wen Chang, Jian-Shiou Huang, Hsing-Lien Lin, Cheng-Yuan Tsai, Chia-Shiung Tsai
  • Patent number: 9419143
    Abstract: A semiconductor device with a structure in which an increase in the number of oxygen vacancies in an oxide semiconductor layer can be suppressed and a method for manufacturing the semiconductor device are provided. The semiconductor device includes an oxide insulating layer; intermediate layers apart from each other over the oxide insulating layer; a source electrode layer and a drain electrode layer over the intermediate layers; an oxide semiconductor layer that is electrically connected to the source electrode layer and the drain electrode layer and is in contact with the oxide insulating layer; a gate insulating film over the source electrode layer, the drain electrode layer, and the oxide semiconductor layer; and a gate electrode layer that is over the gate insulating film and overlaps with the source electrode layer, the drain electrode layer, and the oxide semiconductor layer.
    Type: Grant
    Filed: November 4, 2014
    Date of Patent: August 16, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuya Hanaoka, Naoto Kusumoto
  • Patent number: 9240425
    Abstract: It is an object of one embodiment of the present invention to manufacture a light-emitting display device by simplifying a manufacturing process of a transistor, without an increase in the number of steps as well as the number of photomasks as compared to those in the conventional case. A step for processing a semiconductor layer into an island shape is omitted by using a high-resistance oxide semiconductor which is intrinsic or substantially intrinsic for the semiconductor layer, used to form transistors. Formation of an opening in the semiconductor layer or an insulating layer formed over the semiconductor layer and etching of an unnecessary portion of the semiconductor layer are performed at the same time; thus, the number of photolithography steps is reduced.
    Type: Grant
    Filed: July 20, 2015
    Date of Patent: January 19, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Kaoru Hatano
  • Patent number: 9041111
    Abstract: A flat panel detector includes a photoelectric conversion layer and a pixel detecting element disposed under the photoelectric conversion layer. The pixel detecting element includes: a pixel electrode for receiving charges, a storage capacitor for storing the received charges, and a thin film transistor for controlling outputting of the stored charges. The storage capacitor includes a first electrode and a second electrode. The first electrode includes an upper electrode and a bottom electrode that are disposed opposite to each other and electrically connected. A second electrode is sandwiched between the upper electrode and the bottom electrode. It is insulated between the upper electrode and the second electrode and between the second electrode and the bottom electrode.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: May 26, 2015
    Assignee: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventor: Zhenyu Xie
  • Patent number: 9023706
    Abstract: The present invention relates to a transistor and the method for forming the same. The transistor of the present invention comprises a semiconductor substrate; a gate dielectric layer formed on the semiconductor substrate; a gate formed on the gate dielectric layer; a channel region under the gate dielectric layer; and a source region and a drain region located in the semiconductor substrate and on respective sides of the channel region, wherein at least one of the source and drain regions comprises a set of dislocations that are adjacent to the channel region and arranged in the direction perpendicular to a top surface of the semiconductor substrate, and the set of dislocations comprises at least two dislocations.
    Type: Grant
    Filed: September 10, 2013
    Date of Patent: May 5, 2015
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Haizhou Yin, Huilong Zhu, Zhijiong Luo
  • Patent number: 9024288
    Abstract: Embodiments of the present invention provide an array substrate, a manufacturing method thereof and a display device. The manufacturing method of an array substrate, comprising: forming a gate electrode on a base substrate by a first patterning process, and then depositing a gate insulating layer on the base substrate on which the gate electrode is formed; forming source and drain electrodes on the base substrate obtained after the above step, by a second patterning process; forming an active layer formed of a graphene layer, and a protective layer disposed on the active layer, on the base substrate obtained after the above steps, by a third patterning process; and forming a planarizing layer on the base substrate, obtained after the above steps, by a fourth patterning process, in which the planarizing layer is provided with a through hole through which the source or drain electrode is exposed.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: May 5, 2015
    Assignee: BOE Technology Group Co., Ltd.
    Inventor: Tuo Sun
  • Patent number: 9006047
    Abstract: A method for thermally processing a minimally absorbing thin film in a selective manner is disclosed. Two closely spaced absorbing traces are patterned in thermal contact with the thin film. A pulsed radiant source is used to heat the two absorbing traces, and the thin film is thermally processed via conduction between the two absorbing traces. This method can be utilized to fabricate a thin film transistor (TFT) in which the thin film is a semiconductor and the absorbers are the source and the drain of the TFT.
    Type: Grant
    Filed: September 11, 2013
    Date of Patent: April 14, 2015
    Assignee: NCC Nano, LLC
    Inventors: Kurt A. Schroder, Robert P. Wenz
  • Patent number: 9006050
    Abstract: A first resist pattern is formed by exposure using a first multi-tone photomask, and a first conductive layer, a first insulating layer, a first semiconductor layer, and a second semiconductor layer are etched, so that an island-shaped single layer and an island-shaped stack are formed. Here, sidewalls are formed on side surfaces of the island-shaped single layer and the island-shaped stack. Further, a second resist pattern is formed by exposure using a second multi-tone photomask, and a second conductive layer and the second semiconductor layer are etched, so that a thin film transistor, a pixel electrode, and a connection terminal are formed. After that, a third resist pattern is formed by exposure from a rear side using metal layers of the first conductive layer and the second conductive layer as masks, and the third insulating layer are etched, so that a protective insulating layer is formed.
    Type: Grant
    Filed: February 17, 2012
    Date of Patent: April 14, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kunio Hosoya, Saishi Fujikawa
  • Patent number: 8987705
    Abstract: Carbon nanotubes can be aligned with compatibility with semiconductor manufacturing processes, with scalability for forming smaller devices, and without performance degradation related to structural damages. A planar structure including a buried gate electrode and two embedded electrodes are formed. After forming a gate dielectric, carbon nanotubes are assembled in a solution on a surface of the gate dielectric along the direction of an alternating current (AC) electrical field generated by applying a voltage between the two embedded electrodes. A source contact electrode and a drain contact electrode are formed by depositing a conductive material on both ends of the carbon nanotubes. Each of the source and drain contact electrodes can be electrically shorted to an underlying embedded electrode to reduce parasitic capacitance.
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: March 24, 2015
    Assignees: International Business Machines Corporation, Karlsruher Institut fuer Technologie (KIT)
    Inventors: Phaedon Avouris, Yu-ming Lin, Mathias B. Steiner, Michael W. Engel, Ralph Krupke
  • Patent number: 8981377
    Abstract: A semiconductor device and method of making the same are provided. The method of forming semiconductor device uses non-implant process to form doped layers, and thus is applicable for large-size display panel. The method of forming semiconductor device uses annealing process to reduce the resistance of the doped layers, which improves the electrical property of the semiconductor device. A first dielectric layer of the semiconductor device is able to protect a semiconductor layer disposed in a first region of the substrate from being damaged during the process, and an etching stop layer of the semiconductor device is able to protect the semiconductor layer disposed in a second region of the substrate from being damaged when defining second doped layers. The first dielectric layer and the etching stop layer are formed by the same patterned dielectric layer, thus no extra process is required, fabrication cost is reduced, and yield is increased.
    Type: Grant
    Filed: April 16, 2012
    Date of Patent: March 17, 2015
    Assignee: AU Optronics Corp.
    Inventor: Shou-Peng Weng
  • Patent number: 8969875
    Abstract: The present invention relates to a thin film transistor substrate and method for fabricating the same which can secure an alignment margin and reduce the number of mask steps. A thin transistor substrate according to the present invention includes a gate line and a data line crossing each other to define a pixel, a gate metal pattern under the data line, a thin film transistor having a gate electrode, a source electrode and a drain electrode in the pixel, and a pixel electrode connected to the drain electrode of the thin film transistor by a connection electrode, wherein the data line has a plurality of first slits to disconnect the gate metal pattern from the gate line.
    Type: Grant
    Filed: October 17, 2012
    Date of Patent: March 3, 2015
    Assignee: LG Display Co., Ltd.
    Inventor: Seung Hee Nam
  • Patent number: 8952368
    Abstract: A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.
    Type: Grant
    Filed: May 20, 2013
    Date of Patent: February 10, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jong-Hyun Park, Chun-Gi You, Sun Park, Jin-Hee Kang, Yul-Kyu Lee
  • Patent number: 8952387
    Abstract: According to embodiments of the present invention, there are provided a TFT array substrate, a method for manufacturing the TFT array substrate and an electronic device.
    Type: Grant
    Filed: November 28, 2012
    Date of Patent: February 10, 2015
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Ce Ning, Xuehui Zhang, Jing Yang
  • Patent number: 8946712
    Abstract: A light blocking member having variable transmittance, a display panel including the same, and a manufacturing method thereof. A light blocking member having a variable transmittance according to one exemplary embodiment includes a polymerizable compound, a binder, and a thermochromic material that exhibits a black color at a temperature below a threshold temperature and becomes transparent at a temperature above the threshold temperature.
    Type: Grant
    Filed: August 15, 2012
    Date of Patent: February 3, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byung-Duk Yang, Vladimir Urazaev, Sung-Wook Kang
  • Patent number: 8912538
    Abstract: Embodiments of the present invention provide a thin film transistor array substrate, a method for manufacturing the same, a display panel and a display device. The method for manufacturing the thin film transistor array substrate comprises: sequentially depositing a first metal oxide layer, a second metal oxide layer and a source and drain metal layer, conductivity of the first metal oxide layer being smaller than conductivity of the second metal oxide layer; patterning the first metal oxide layer, the second metal oxide layer and the source and drain metal layer, so as to form an active layer, a buffer layer, a source electrode and a drain electrode, respectively. According to technical solutions of the embodiments of the invention, it is possible that the manufacturing process of the metal oxide TFT array substrate is simplified, and the production cost of products is reduced.
    Type: Grant
    Filed: December 17, 2012
    Date of Patent: December 16, 2014
    Assignee: Boe Technology Group Co., Ltd.
    Inventors: Xiang Liu, Woobong Lee
  • Patent number: 8912057
    Abstract: A semiconductor device with an n-type transistor and a p-type transistor having an active region is provided. The active region further includes two adjacent gate structures. A portion of a dielectric layer between the two adjacent gate structures is selectively removed to form a contact opening having a bottom and sidewalls over the active region. A bilayer liner is selectively provided within the contact opening in the n-type transistor and a monolayer liner is provided within the contact opening in the p-type transistor. The contact opening in the n-type transistor and p-type transistor is filled with contact material. The monolayer liner is treated to form a silicide lacking nickel in the p-type transistor.
    Type: Grant
    Filed: June 5, 2013
    Date of Patent: December 16, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventor: Derya Deniz
  • Patent number: 8912027
    Abstract: A display device according to an exemplary embodiment of the present invention includes a semiconductor layer; a data line disposed on the semiconductor layer, and a source electrode as well as a drain electrode disposed on the semiconductor layer and facing the source electrode. The semiconductor layer is made of an oxide semiconductor including indium, tin, and zinc. An atomic percent of indium in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 90 at %, an atomic percent of zinc in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 60 at %, and an atomic percent of tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %, and the data line and the drain electrode comprise copper.
    Type: Grant
    Filed: January 3, 2013
    Date of Patent: December 16, 2014
    Assignee: Samsung Display Co., Ltd
    Inventors: Byung Du Ahn, Kyoung Won Lee, Gun Hee Kim, Young Joo Choi
  • Patent number: 8906756
    Abstract: An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. In a manufacturing process of a bottom-gate transistor including an oxide semiconductor layer, heat treatment in an atmosphere containing oxygen and heat treatment in vacuum are sequentially performed for dehydration or dehydrogenation of the oxide semiconductor layer. In addition, irradiation with light having a short wavelength is performed concurrently with the heat treatment, whereby elimination of hydrogen, OH, or the like is promoted. A transistor including an oxide semiconductor layer on which dehydration or dehydrogenation treatment is performed through such heat treatment has improved stability, so that variation in electrical characteristics of the transistor due to light irradiation or a bias-temperature stress (BT) test is suppressed.
    Type: Grant
    Filed: May 18, 2011
    Date of Patent: December 9, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Ryosuke Watanabe, Suzunosuke Hiraishi, Junichiro Sakata
  • Patent number: 8901691
    Abstract: A touch sensing substrate includes a substrate, a first light sensing element, a second light sensing element and a first bias line. The first light sensing element includes a first gate electrode, a first active pattern overlapping with the first gate electrode, a first source electrode partially overlapping with the first active pattern and a first drain electrode partially overlapping with the first active pattern. The second light sensing element includes a second gate electrode, a second active pattern overlapping with the second gate electrode, a second source electrode partially overlapping with the second active pattern and a second drain electrode partially overlapping with the second active pattern. The first bias line is connected to the first and second gate electrodes.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: December 2, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yun-Jong Yeo, Byeong-Hoon Cho, Ki-Hun Jeong, Hong-Kee Chin, Jung-Suk Bang, Woong-Kwon Kim, Sung-Ryul Kim, Hee-Joon Kim, Dae-Cheol Kim, Kun-Wook Han
  • Patent number: 8895977
    Abstract: A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.
    Type: Grant
    Filed: November 9, 2012
    Date of Patent: November 25, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Doo Hyoung Lee, Bo Sung Kim, Chan Woo Yang, Seung-Ho Jung, Yeon Taek Jeong, June Whan Choi, Tae-Young Choi
  • Patent number: 8889499
    Abstract: A semiconductor device includes an oxide semiconductor layer including a channel formation region which includes an oxide semiconductor having a wide band gap and a carrier concentration which is as low as possible, and a source electrode and a drain electrode which include an oxide conductor containing hydrogen and oxygen vacancy, and a barrier layer which prevents diffusion of hydrogen and oxygen between an oxide conductive layer and the oxide semiconductor layer. The oxide conductive layer and the oxide semiconductor layer are electrically connected to each other through the barrier layer.
    Type: Grant
    Filed: September 17, 2013
    Date of Patent: November 18, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kengo Akimoto
  • Patent number: 8883571
    Abstract: A method of manufacturing a transistor includes: forming an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate electrode facing the channel region; and forming an insulating film covering the gate electrode and the oxide semiconductor film. Infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: November 11, 2014
    Assignee: Sony Corporation
    Inventors: Narihiro Morosawa, Motohiro Toyota
  • Patent number: 8884345
    Abstract: The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: November 11, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-seong Heo, Hyun-jong Chung, Sun-ae Seo, Sung-hoon Lee, Hee-jun Yang
  • Patent number: 8878184
    Abstract: A display device having the high aperture ratio and a storage capacitor with high capacitance is to be obtained. The present invention relates to a display device and a manufacturing method thereof. The display device includes a thin film transistor which includes a gate electrode, a gate insulating film, a first semiconductor layer, a channel protective film, a second semiconductor having conductivity which is divided into a source region and a drain region, and a source electrode and a drain electrode; a third insulating layer formed over the second conductive film; a pixel electrode formed over the third insulating layer, which is connected to one of the source electrode and the drain electrode; and a storage capacitor formed in a region where a capacitor wiring over the first insulating layer and the pixel electrode are overlapped with the third insulating layer over the capacitor wiring interposed therebetween.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: November 4, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Kunio Hosoya
  • Patent number: 8878181
    Abstract: An oxide thin film transistor (TFT) and a fabrication method thereof are provided.
    Type: Grant
    Filed: November 12, 2013
    Date of Patent: November 4, 2014
    Assignee: LG Display Co., Ltd.
    Inventors: Hoon Yim, Dae-Hwan Kim
  • Patent number: 8866137
    Abstract: A thin film transistor array panel includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a first electrode and an oxide semiconductor disposed directly on the gate insulating layer; a source electrode and a drain electrode formed on the oxide semiconductor; a passivation layer disposed on the first electrode, the source electrode, and the drain electrode; and a second electrode disposed on the passivation layer.
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: October 21, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jin-Won Lee, Woo Geun Lee, Kap Soo Yoon, Ki-Won Kim, Hyun-Jung Lee, Hee-Jun Byeon, Ji-Soo Oh
  • Patent number: 8853691
    Abstract: A transistor and a manufacturing method thereof are provided. The transistor includes a first gate, a second gate disposed on one side of the first gate, a first semiconductor layer, a second semiconductor layer, an oxide layer, a first insulation layer, a second insulation layer, a source, and a drain. The first semiconductor layer is disposed between the first and second gates; the second semiconductor layer is disposed between the first semiconductor layer and the second gate. The oxide layer is disposed between the first semiconductor layer and the second semiconductor layer. The first insulation layer is disposed between the first gate and the first semiconductor layer; the second insulation layer is disposed between the second gate and the second semiconductor layer. The source and the drain are disposed between the first insulation layer and the second insulation layer and respectively disposed on opposite sides of the oxide layer.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: October 7, 2014
    Assignee: E Ink Holdings Inc.
    Inventors: Chih-Hsiang Yang, Ted-Hong Shinn, Wei-Tsung Chen, Hsing-Yi Wu
  • Patent number: 8852978
    Abstract: A thin film transistor fabrication method allows forming a first photoresist pattern on a triple layer of insulation, conductive and metal films opposite to a semiconductor pattern. A first metal pattern and a conductive pattern are formed through an etch process before forming source and drain regions through a first ion injection process. A second photoresist pattern with a narrower width than that of the first photoresist pattern is derived from the first photoresist pattern. The first metal pattern is reformed into a second metal pattern with a narrower width than that of the second photoresist pattern. A process is performed that includes removing the second photoresist pattern, forming LDD (Lightly Doped Drain) regions in the semiconductor pattern, and forming GOLDD (Gate Overlap LDD) regions in the semiconductor pattern. A second insulation film is formed before forming source and drain electrodes on the second insulation film.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: October 7, 2014
    Assignee: LG Display Co., Ltd.
    Inventor: Hee Dong Choi
  • Patent number: 8853011
    Abstract: A repairing method, repairing device and repairing structure for repairing a signal line of an array substrate having the disconnected defect, including: setting a repairing route according to a position of the disconnected defect and determining a position at which a filling portion is required to be formed according to the repairing route; forming the filling portion at the position at which the filling portion is required to be formed; and forming a repairing line along the repairing route. By detecting the repairing route before repairing the disconnected defect by forming the filling portion according to the repairing route, the present disclosure can avoid the disconnection of the repairing line caused by great height differences of the surface under the repairing line and improve the repairing success rate of the disconnected defect.
    Type: Grant
    Filed: December 13, 2012
    Date of Patent: October 7, 2014
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
    Inventors: Wen-da Cheng, Chujen Wu
  • Patent number: 8853010
    Abstract: A semiconductor device comprises a substrate and first and second stress-generating epitaxial regions on the substrate and spaced apart from each other. A channel region is on the substrate and positioned between the first and second stress-generating epitaxial regions. A gate electrode is on the channel region. The channel region is an epitaxial layer, and the first and second stress-generating epitaxial regions impart a stress on the channel region.
    Type: Grant
    Filed: February 8, 2012
    Date of Patent: October 7, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Heung-Kyu Park, Woo-Bin Song, Nam-Kyu Kim, Su-Jin Jung, Byeong-Chan Lee, Young-Pil Kim, Sun-Ghil Lee
  • Patent number: 8853695
    Abstract: A substrate supporting thin film transistors thereon, each including a semiconductor layer and source-drain electrodes, wherein the source-drain electrodes are formed from a nitrogen-containing layer or oxygen/nitrogen-containing layer and a thin film of pure copper or copper alloy. The nitrogen-containing layer or oxygen/nitrogen-containing layer has respectively part or all of its nitrogen or part or all of its oxygen or nitrogen connected to silicon in the semiconductor layer of the thin film transistor, and the thin film of pure copper or copper alloy is connected to the semiconductor layer of said thin film transistor through the nitrogen-containing layer or oxygen/nitrogen-containing layer.
    Type: Grant
    Filed: October 12, 2007
    Date of Patent: October 7, 2014
    Assignee: Kobe Steel, Ltd.
    Inventors: Aya Hino, Hiroshi Gotou
  • Patent number: 8847294
    Abstract: There are provided a substrate including an oxide TFT having improved initial threshold voltage degradation characteristics included in a driving circuit of a liquid crystal display (LCD) device, a method for fabricating the same, and a driving circuit for an LCD device using the same. The substrate including an oxide thin film transistor (TFT) includes: a base substrate divided into a pixel region and a driving circuit region; and a plurality of TFTs formed on the base substrate, wherein an initial threshold voltage of at least one of the plurality of TFTs formed in the driving circuit region is positive-shifted to have a predetermined level.
    Type: Grant
    Filed: December 27, 2012
    Date of Patent: September 30, 2014
    Assignee: LG Display Co., Ltd.
    Inventors: TaeSang Kim, Hun Jeoung
  • Patent number: 8841194
    Abstract: In one aspect, a method of forming a polysilicon (poly-Si) layer and a method of manufacturing a thin film transistor (TFT) using the poly-Si layer is provided. In one aspect, the method of forming a polysilicon (poly-Si) layer includes forming an amorphous silicon (a-Si) layer on a substrate in a chamber; cleaning the chamber; removing fluorine (F) generated while cleaning the chamber; forming a metal catalyst layer for crystallization, on the a-Si layer; and crystallizing the a-Si layer into a poly-Si layer by performing a thermal processing operation.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: September 23, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jong-Ryuk Park, Yun-Mo Chung, Tak-Young Lee, Kil-Won Lee