Abstract: The invention relates to a gate control device for a JFET-type transistor that has a gate, a drain and a source. The gate control device includes a voltage generation circuit comprising an output connected to the gate of the transistor, where the circuit is designed to generate at the output a reference gate-source voltage following a predetermined voltage ramp. A voltage limiting circuit is designed to limit the reference gate-source voltage to a predetermined maximum value when the gate-source voltage at the terminals of the JFET transistor has reached said maximum value.

Abstract: A voltage switch circuit includes a positive voltage supply circuit configured to supply a positive voltage to a control node in response to an enable signal, a negative voltage supply circuit configured to supply a negative voltage to the control node in response to a negative voltage enable signal, a control signal generation circuit configured to generate the negative voltage enable signal in response to the enable signal, and a switch circuit configured to transfer an input voltage with a positive potential or a negative potential to an output node in response to a potential of the control node.

Abstract: This disclosure describes systems, methods, and apparatuses for impedance-matching radio frequency power transmitted from a radio frequency generator to a plasma load in a semiconductor processing chamber. Impedance-matching can be performed via a match network having a variable-reactance circuit. The variable-reactance circuit can comprise one or more reactive elements all connected to a first terminal and selectively shorted to a second terminal via a switch. The switch can comprise a bipolar junction transistor (BJT) or insulated gate bipolar transistor (IGBT) controlled via bias circuitry. In an on-state, the BJT base-emitter junction is forward biased, and AC is conducted between a collector terminal and a base terminal. Thus, AC passes through the BJT primarily from collector to base rather than from collector to emitter. Furthermore, the classic match network topology used with vacuum variable capacitors can be modified such that voltages do not overload the BJT's in the modified topology.

Abstract: An apparatus is provided that includes a first field effect transistor with a source tied to zero volts and a drain tied to voltage drain drain (Vdd) through a first resistor. The apparatus also includes a first node configured to tie a second resistor to a third resistor and connect to an input of a gate of the first field effect transistor in order for the first field effect transistor to receive a signal. The apparatus also includes a second field effect transistor configured as a unity gain buffer having a drain tied to Vdd and an uncommitted source.

Abstract: A power switch circuit includes a control circuit, and first and second detecting circuits. The control circuit includes first and second field effect transistors (FETs) and first and second sensing resistors. The first detecting circuit includes two input terminals connected to the first and second ends of the first sensing resistor and an output terminal connected to the first FET. The first detecting circuit controls the first FET to be turned on or turned off according to the voltages of the first and second ends of the first sensing resistor. The second detecting circuit includes two input terminals connected to the first and second ends of the second sensing resistor and an output terminal connected to the second FET. The second detecting circuit controls the second FET to be turned on or turned off according to the voltages of the first and second ends of the second sensing resistor.

Abstract: In some embodiments, an input/output (I/O) circuit sends and receives a high-level signal and a low-level signal via a coupling capacitance provided on a communication line. The I/O circuit includes a receiving portion including a first detection circuit arranged to detect one of the signals and a second detection circuit arranged to detect the other signal, a transmitting portion including a three-value output circuit configured to output one of signals consisting of a high-level signal, a low-level signal, and a high impedance signal, and a control circuit configured to control the receiving portion and the transmitting portion. The control circuit judges a level of an inputted signal depending on detection results of the first detection circuit and the second detection circuit in a receiving state and controls an output value of the three-value output circuit in a transmitting state.

Abstract: Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.

Abstract: Voltage switches, memory devices, memory systems, and methods for switching are disclosed. One such voltage switch uses a pair of switch circuits coupled in series, each switch circuit being driven by a level shift circuit. Each switch circuit uses a group of series coupled transistors with a parallel control transistor where the number of transistors in each group may be determined by an expected switch input voltage and a maximum allowable voltage drop for each transistor. A voltage of a particular state of an enable signal is shifted up to the switch input voltage by the level shift circuits. The particular state of the enable signal turns on the voltage switch such that the switch output voltage is substantially equal to the switch input voltage.

Abstract: A pass transistor circuit according to an embodiment includes: a first input/output terminal connected to a first signal line; a second input/output terminal connected to a second signal line; a first device having a first terminal connected to a first power supply and a second terminal; a second device having a third terminal connected to the second terminal and a fourth terminal connected to a second power supply; a first transistor having one of source/drain connected to the second terminal, a gate receiving a first control signal; and a second transistor having a gate connected to the other one of source/drain of the first transistor, one of source/drain connected to the first input/output terminal, and the other one of source/drain connected to the second input/output terminal. One of the first and second devices is a nonvolatile memory device, the other one of the first and second devices is a MOSFET.

Abstract: One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg1n-Rg3n of a near-I/O FET Qn1 near to a common input/output terminal I/O connected with an antenna are set to be higher in linearity than V-I characteristics of middle-portion gate resistances Rg3n and Rg4n of middle-portion FETs Qn3 and Qn4. Thus, even in case that an uneven RF leak signal is supplied to near-I/O gate resistances Rg1n-Rg3n, and middle-portion gate resistances Rg3n and Rg4n, the distortion of current flowing through the near-I/O gate resistances Rg1n-Rg3n near to the input/output terminal I/O can be reduced.

Abstract: A transistor has variation in a threshold voltage or mobility due to accumulation of factors such as variation in a gate insulating film which is caused by a difference of a manufacturing process or a substrate to be used and variation in a crystal state of a channel formation region. The present invention provides an electric circuit which is arranged such that both electrodes of a capacitance device can hold a voltage between the gate and the source of a specific transistor. Further, the present invention provides an electric circuit which has a function capable of setting a potential difference between both electrodes of a capacitance device so as to be a threshold voltage of a specific transistor.

Abstract: Switch circuits are disclosed, for providing a single-ended and a differentially switched high-voltage output signals by switching a high supply voltage in response to at least one logic-level control signal. The switch that provides the single-ended switched high-voltage output signal includes a chain of at least three serially coupled field effect transistors (FETs). The chain receives the high supply voltage and switches it to output the high-voltage output signal. The switch that provides the differentially switched high-voltage output signal includes two differentially coupled chains, each having at least three serially coupled FETs. The chains receive the high supply voltage and switch it to output the differential high-voltage output signal. A control/bias circuit provides a control voltage to at least one of the FETs in the chains, responsive to the control signal.

Abstract: Apparatus and methods are disclosed related to using one or more field effect transistors as a resistor. One such apparatus includes a field effect transistor with a first series circuit in parallel with the gate and the source of the field effect transistor and a second series circuit in parallel with the gate and the drain of the field effect transistor. Each series circuit can include a capacitor and a switch in series with the capacitor. The switch can be configured to be on when the field effect transistor is on, and to be off when the field effect transistor is off. This can improve the linearity of the field effect transistor as a resistor. In some implementations, the apparatus can further include an isolation resistor having a first end and a second end, the first end electrically coupled to the gate of the field effect transistor.

Abstract: A circuit is constituted by a plurality of n-channel-type transistors, the circuit including: among the plurality of transistors, a transistor including a drain terminal for receiving a voltage of VDD, a source terminal, and a gate terminal for receiving an input signal; among the plurality of transistors, a transistor including a drain terminal for receiving the voltage of VDD, a source terminal connected to an output terminal, and a gate terminal connected to the source terminal of the transistor; and a capacitor provided between a node and a clock terminal for receiving a clock signal. In at least one embodiment, the clock signal inputted into the clock terminal has a frequency higher than that of an output signal outputted from the output terminal.

Abstract: A regenerative load electric power management system can include a system bus, an input filter coupled to the system bus, a first bidirectional solid state power controller coupled to the system bus, a motor drive inverter coupled to the input filter, a second bidirectional solid state power controller coupled to the motor drive inverter, a bidirectional direct current DC-DC converter coupled to the second bidirectional solid state power controller and an energy storage bus coupled to the bidirectional DC-DC converter, the energy storage bus providing access to an energy storage device.

Abstract: A circuit for improving the control of a change in state of a signal in an electronic device between a first state and a second state, wherein a first change in state occurs when the state changes from the second state to the first state and a second change in state occurs when the state changes from the first state to the second state and wherein the first and second changes in state have associated therewith a first and a second time delay over which each change in state occurs, characterized in that said circuit comprises a determining unit for measuring the first time delay and a calculator for calculating a common delay to replace one or more of the first and second delays to thereby improve the control of the change in state of the signal.

Abstract: A monolithic microwave integrated circuit (MMIC) includes a transistor, coupled line and multiple air bridges. The coupled line is configured to output a coupled signal from the transistor, the coupled line running parallel to a drain of the transistor. The air bridges connect the drain of the transistor with a bond pad for outputting a transistor output signal, the bridges being arranged parallel to one another and extending over the coupled line. The air bridges and the coupled line effectively provide coupling of the transistor output signal to a load.

Abstract: A switching circuit for switching a time-varying input signal, the switching circuit comprising: at least one switch including a N-channel MOSFET and a P-channel MOSFET, each having a gate configured to receive a drive signal to change the ON/OFF state of the switch; and a drive circuit configured and arranged so as to selectively apply a pair of drive signals to change the ON/OFF state of the switch, the drive circuit being configured and arranged to generate the drive signals as a function of (a) a pair DC signal components sufficient to change the ON/OFF state of the switch and (b) a pair of time-varying signal components as at least a partial replica of the signal present on the source terminal of each MOSFET so that when applied with the DC signals to the gates of the n-channel MOSFET and p-channel MOSFET respectively, the drive signals will be at the appropriate level to maintain the ON/OFF state of the switch and keep the gate-source voltages of each MOSFET within the gate-source breakdown limit of the

Abstract: At least one exemplary embodiment is directed to a semiconductor power switching device including a ctrl switch, a sync switch, where a resistor is electrically connected between the ctrl switch and the sync switch.

Abstract: Power switching circuits and power management techniques are provided that can reduce static power of ICs, including digital core processors. In one embodiment, the power switching circuit includes a footer (power-gating transistor) between the core and a ground rail and at least two additional power-gating transistors parallel to the footer. The power-gating transistors are controlled by respective control signals to enable selective switching. In a specific embodiment, for each sleep mode, at most, a single one of the transistors is turned on. Multiple sleep modes are accomplished according to the relative sizing of the additional power-gating transistors. A larger of the additional transistors is used to provide a standby mode during short idling times by providing a fast wake-up time and some reduction in static power. For standby modes during longer idling periods, smaller sized transistors are turned on. For longest idling periods, all transistors are turned off.

Abstract: A power supply control circuit comprises an output transistor which controls supply of electric power to a load and a gate driving circuit which generates control signals “a” and “b” for controlling on/off of the output transistor 32 based on an external input signal. A transistor 37 discharges a gate charge of the output transistor based on the control signals “a” and “b”, when turning off the output transistor. A transistor 39 discharges more slowly than the transistor. A diode is coupled to the transistor 37 in series and which cuts off a discharge path through the transistor 37 transistor and the diode when the gate voltage of the output transistor falls to a voltage level higher than the sum of the power supply voltage Vcc and a threshold voltage of the output transistor, at a time of turning off the output transistor.

Abstract: A semiconductor device includes one or more transistor cells mounted on a first conductive type silicon carbide (SiC) substrate, wherein each of the transistor cells includes a second conductive type wall region formed on a first surface of the SiC substrate, a first conductive type source region formed in the wall region, a gate electrode formed with a gate insulating film; a source electrode formed in such a way as to be brought into contact with the source region, and a drain electrode formed on a second surface of the SiC substrate. The semiconductor device further includes a second conductive type region located close to an outside of an outermost cell of the transistor cells, the second conductive type region surrounding the wall region and being insulated from both of the gate electrode and the source electrode.

Abstract: A switch circuit can include an impedance selection switch and a multi-output-resistance switch driver. The impedance selection switch can electrically connect an impedance to an input of an amplifier in response to a driver output signal, and include at least one transistor. The multi-output-impedance switch driver may provide the driver output signal to the switch, and have a first, relatively higher output resistance when providing a first logic state of the driver output signal to turn on the switch, and a second, relatively lower output resistance when providing a second logic state of the driver output signal to turn off the switch. The ratio of the first output resistance to the second output resistance can be greater than a selected predetermined ratio value.

Abstract: A switch can be implemented by a switch circuit, which can include a pair of NMOS transistors connected in series as pass-through transistors to transmit an input signal at an input terminal to produce an output signal at output terminal in response to an active state of a switching signal, and a pair of PMOS transistors connected in series as pass-through transistors to transmit the input signal at the input terminal to produce the output signal at output terminal in response to the active state of the switching signal. The switch circuit can also include a switch network connecting, in response to the active state of the switching signal, sources to bodies of the pairs of NMOS and PMOS transistors, and connecting, in response to an inactive state of the switching signal, the bodies of the pair of NMOS transistors to a first reference voltage, the bodies of the pair of PMOS transistors to a second reference voltage, and the sources of the pairs of NMOS and PMOS transistors to a third reference voltage.

Abstract: A delay circuit used in a schedule controller includes a voltage detection unit, a timer, and a first electronic switch. The voltage detection unit receives an input voltage and compares the input voltage with a predetermined voltage. The timer is controlled by the voltage detection unit to calculate duration of an interval time. The first electronic switch is switched on or off under the control of the timer. When the input voltage substantially equals or exceeds the predetermined voltage, the timer calculates duration of the interval time, the timer generates and transmits a switch signal to the first electronic switch when the timing is reached, and the first electronic switch is switched on by the switch signal and provides an output voltage.

Abstract: A circuit comprises a first voltage source, a second voltage source, a first switch, firsts transistors, and a control circuitry. The first switch is configured to selectively couple the first voltage source or the second voltage source to a first signal line. The first transistors are in an IO circuitry and have first bulks configured to receive the first signal line. The control circuitry is configured to receive a clock and a command signal on a command signal line, and generate a first control signal on a first control signal line to control the first switch based on the clock and the command signal.

Abstract: Embodiments of the present invention provide an electronic switch for commodity use. Specifically, embodiments of this invention provide a high capacity intelligent electronic switch for commodity use. A flexible film substrate is used along with a field-effect transistor (FET) to produce a commodity switch. Multiple printed flexible electronics PFE substrates are stacked to and integrated into an electronic switch system. Various methods are used to measure power consumption within the switch. The modular cell design allows for horizontal and vertical scaling.

Abstract: A circuit includes a first current source, a second current source, a third current source and a fourth current source. A load includes a first terminal connected to a first node between the first current source and the second current source and a second terminal connected to a second node between the third current source and the fourth current source. A bias control module includes a first output configured to output a first bias signal to the first and fourth current sources and a second output configured to provide a second bias signal to the second and third current sources. A capacitance is connected to the first and second outputs of the bias control module.

Abstract: Provided is a transmission gate capable of adapting to various input voltages to attain high S/N characteristics. The transmission gate includes: a PMOS transistor (11) which includes a drain to which an input voltage (Vin) is input, is turned ON when a voltage (Vin?Vs1) is input to a gate thereof, and includes a source from which the input voltage (Vin) is output as an output voltage (Vout); and an NMOS transistor (12) which has a gate length, a gate width, a gate oxide thickness, and an absolute value of a threshold voltage which are the same as those of the PMOS transistor (11), includes a drain to which the input voltage (Vin) is input, is turned ON when a voltage (Vin+Vs1) is input to a gate thereof, and includes a source from which the input voltage (Vin) is output as the output voltage (Vout).

Abstract: A switch circuit is disclosed. The switch circuit may include one or more arrangements of transistors coupled in a cascode configuration. The transistors used to implement the switch circuit may be configured for operation within a first range of voltages. The application in which the switch circuit may be implemented may require conveying signals within a second range of voltages that is greater than the first range of voltages. Thus, the switch circuit may include one or more additional transistors to ensure that a voltage drop between any two terminals of the transistors used in the switch circuit is within the first range of voltages.

Abstract: Power switching circuits including an inductive load and a switching device are described. The switches devices can be either low-side or high-side switches. Some of the switches are transistors that are able to block voltages or prevent substantial current from flowing through the transistor when voltage is applied across the transistor.

Abstract: A low-power, low-latency power-gate (LPLLPG) circuit is used to shut off or otherwise reduce power that is provided to electronic component(s), such as in a sleep or standby mode. ON-rush current is controlled by sizing at least one transistor in the power-gate circuit, and power consumption of the power-gate circuit in both standby state and active state is reduced by not using additional delay elements. Ramping up a gated voltage supply with low ON-rush current is performed by applying/using logic rather than delay signals. This logic does not turn ON transistors in the power-gate circuit until the gated voltage supply has ramped up close to a level of an ungated voltage supply. By not using additional delay cells, faster turn OFF of the gated voltage supply is obtained.

Abstract: To reduce adverse effect of variations in threshold voltage. A semiconductor device includes a transistor including a gate connected to one electrode of a capacitor and one terminal of a SW1, a source and a drain one of which is connected to one terminal of a SW2 and one terminal of a SW3 and the other of which is connected to the other terminal of the SW1 and one terminal of a SW4; a first wiring electrically connected to the other terminal of the SW2; a second wiring electrically connected to the other terminal of the SW4; a load including electrodes one of which is connected to one electrode of the capacitor and the other terminal of the SW3; and a third wiring connected to the other electrode of the load.

Abstract: The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current.

Abstract: Example reference current distribution circuitry described herein include current mirrors having resistive elements of varying sizes between gate nodes of sense amplifier transistors along a voltage distribution line. Examples of counter coupling capacitances which may be coupled to the gate nodes of sense amplifier transistors are also described.

Abstract: A stage circuit includes an output unit for outputting the voltage of a first or second power source to a first output terminal, corresponding to a voltage at a first or second node; a bidirectional driver for receiving sampling signals of previous and next stages; a first driver coupled to the bidirectional driver to control the voltages at the first and second nodes, corresponding to first and second clock signals; and a second driver coupled to the bidirectional driver to output a sampling signal corresponding to the first and second clock signals. The first driver includes a first transistor coupled between the first power source and the second node; a second transistor coupled between the second node and the second power source; a third transistor coupled between the bidirectional driver and the first node; and a first capacitor coupled between the second node and a second input terminal.

Abstract: A low-side driver circuit includes a low-side driver integrated circuit and a controllable switch. The low-side driver integrated circuit is responsive to an on-off command input signal to selectively operate in an ON mode and an OFF mode. The controllable switch is responsive to the on-off command signal to selectively operate in a CLOSED mode and an OPEN mode. The low-side driver integrated circuit and the controllable switch are configured to simultaneously operate in the ON mode and the CLOSED mode, respectively, and in the OFF mode and the OPEN mode, respectively. During a voltage transient the potential will be realized across the controllable switch, thus protecting the lower voltage rated low-side integrated circuit.

Abstract: A system and method for providing an accurate current reference using a low-power current source is disclosed. A preferred embodiment comprises a system comprises a first section and a second section. The first section comprises a first simple current reference, an accurate current reference, and a circuit that generates a digital error signal based upon a comparison of an output of the first simple current reference and an output of the accurate current reference. The second section comprises a second simple current reference providing a second reference current, an adjustment circuit providing an adjustment current based upon the digital error signal, and a circuit biased with current equivalent to a summation of the second reference current and the adjustment current. The first simple current reference and the second simple current reference may be equivalent circuits.

Abstract: A voltage buffer may include a first signal path extending from an input terminal to an output terminal in which the first signal path further may include a buffer transistor that may have a control terminal, and a first and second current terminals responsive to the control terminal. In the first signal path, the control terminal may be connected to the input terminal, the first current terminal may be connected to the output terminal, and the first signal path may supply a load current to a load device responsive to an input signal at the input terminal. The voltage buffer further may include a second signal path extending from the input terminal to a current source node. The second signal path may include a replica load device. The voltage buffer further may include a current source supplying substantially constant current and coupled to the current source node.

Abstract: Disclosed are an apparatus and a method for switching RF signals. An RF switching apparatus according to an exemplary embodiment of the present invention includes: a plurality of FETs passing or blocking high-frequency signals depending on driving voltage applied to a gate; a control power supply generating control voltage for controlling the passing or blocking of the high-frequency signals; and a charge pump increasing the level of the control voltage and outputting the corresponding voltage as the driving voltage. According to the exemplary embodiment of the present invention, it is possible to minimize insertion loss generated in an RF switch.

Abstract: An object is to provide a semiconductor device that can realize a function of a thyristor without complication of the process. A semiconductor device including a memory circuit that stores a predetermined potential by reset operation and initialization operation is provided with a circuit that rewrite data in the memory circuit in accordance with supply of a trigger signal. The semiconductor device has a structure in which a current flowing through the semiconductor device is supplied to a load by rewriting data in the memory circuit, and thus can function as a thyristor.

Abstract: An example solid state contactor assembly includes a switching element having a field-effect transistor and a diode in parallel. The switching element is configured to communicate electric current along a current flow path extending from a first bus bar to a second bus bar. A control device is configured to selectively communicate current along a portion of the current flow path through the field-effect transistor or the diode of the switching element.

Abstract: Apparatuses and methods for disabling well bias are disclosed. In one embodiment, an apparatus includes a complimentary metal oxide semiconductor (CMOS) switch having a gate, a drain, a source, and a well. The source and drain are formed in the well. The gate is formed adjacent the well between the source and drain, and the source is configured to receive a bias voltage from a power amplifier. The apparatus further includes a well bias control block for biasing the well voltage of the first switch and a disable circuit for disabling the well bias control block so as to prevent the well bias control block from biasing the well. The well bias control block can bias the well voltage of the first switch to at least two voltage levels.

Abstract: A semiconductor integrated circuit which reduces and increase in the level of a harmonic signal of an RF transmission output signal at the time of supplying an RF transmission signal to a bias generation circuit of an antenna switch, including an antenna switch having a bias generation circuit, a transmitter switch, and a receiver switch. The on/off state of a transistor of the transmitter switch coupled between a transmitter port and an I/O port is controlled by a transmit control bias. The on/off state of the transistors of the receiver switch coupled between the I/O port and a receiver port is controlled by a receiver control bias. An RF signal input port of the bias generation circuit is coupled to the transmit port, and a negative DC output bias generated from a DC output port is supplied to a gate control port of transistors of the receiver switch.

Abstract: A circuit and method are provided for switching in a semiconductor based high power switch. Complementary p-type based transistors are utilized along insertion loss insensitive paths allowing biasing voltages to alternate between supply and ground, allowing for negative voltage supplies and blocking capacitors to be dispensed with, while improving performance.

Abstract: A system and method for driving a bipolar junction transistor is provided. The system includes a first transistor including a first gate, a first terminal, and a second terminal. The first gate is configured to receive a first control signal. Additionally, the system includes a second transistor including a second gate, a third terminal, and a fourth terminal. The second gate is configured to receive a second control signal. Moreover, the system includes a first resistor including a fifth terminal and a sixth terminal. The fifth terminal is connected to the first terminal, and the sixth terminal is biased to a first predetermined voltage. The fourth terminal is biased to a second predetermined voltage. The second terminal and the third terminal are connected at a node, and the node is connected to a base for a bipolar junction transistor.

Abstract: An apparatus comprising: a first control switch driven by a first bit value; a first weighted switch driven by a first clock signal; a first intermediate node coupled between the first control switch and the second weighted switch; a first precharge transistor coupled to the first intermediate node, wherein the precharge transistor is driven by an inverse of the clock signal; a second control switch driven by an inverse of the bit; a second weighted switch driven by a second clock signal; a second intermediate node coupled between the second control switch and the second weighted switch; a second precharge transistor coupled to the second intermediate node, wherein the second precharge transistor is driven by an inverse of the second clock signal; and a capacitor coupled to the first control switch, the second control switch, the first precharge transistor and the second precharge transistor.

Abstract: A switch can be implemented by a switch circuit, which can include a pair of NMOS transistors connected in series as pass-through transistors to transmit an input signal at an input terminal to produce an output signal at output terminal in response to an active state of a switching signal, and a pair of PMOS transistors connected in series as pass-through transistors to transmit the input signal at the input terminal to produce the output signal at output terminal in response to the active state of the switching signal. The switch circuit can also include a switch network connecting, in response to the active state of the switching signal, sources to bodies of the pairs of NMOS and PMOS transistors, and connecting, in response to an inactive state of the switching signal, the bodies of the pair of NMOS transistors to a first reference voltage, the bodies of the pair of PMOS transistors to a second reference voltage, and the sources of the pairs of NMOS and PMOS transistors to a third reference voltage.

Abstract: In order to reduce power consumption, an arithmetic circuit having a function of performing a logic operation processing based on an input signal, storing a potential set in accordance with the result of the logic operation processing as stored data, and outputting a signal with a value corresponding to the stored data as an output signal. The arithmetic circuit includes an arithmetic portion performing the logic operation processing, a first field-effect transistor controlling whether a first potential, which is the potential corresponding to the result of the logic operation processing is set, and a second field-effect transistor controlling whether the potential of the output signal data is set at a second potential which is a reference potential.

Abstract: A control circuit controls a driving transistor connected in series with an electrical load between a power supply voltage and a ground. The control circuit includes a pull-up resistor connected at one end to a power supply voltage side of the driving transistor, a current detection resistor for detecting an electric current flowing from the driving transistor to the ground, a current mirror circuit including a starting transistor connected between the pull-up transistor and the current detection resistor. The current mirror circuit supplies a mirror current of the electric current. The control circuit further includes a current source circuit for supplying a driving current to a control terminal of the driving transistor in accordance with the mirror current to turn ON the driving transistor in response to an external control signal.