Abstract: A method of forming a catalyst body by forming a first layer of hemispherical grain polysilicon over a substrate, and oxidizing at least a portion of the first layer to form a second layer of silica. Additionally, forming a third layer of nitride material over the second layer, and forming a catalyst material over the nitride layer, can be performed before annealing to form a catalyst body.

Abstract: This invention pertains to complex mixtures of the formula M is a metal having a valence of from 2–6, L1 is an anionic ligand and L2 is a siloxide or silyl amide ligand suited for producing stable thin-film metal silicates, v is equal to the valence of the metal, and 0<x<v. The bonding is such that an M—O—Si or an M—N—Si linkage exists, respectively, and the stability for the complex is provided by the organic ligand. The invention also relates to a process for preparing the metal siloxide complexes. Thus, the complexes can be represented by the formulas (R)mM—(O—SiR1R2R3)n and (R)mM—[N—(SiR1R2R3)y(R4)2- y]n wherein M is a metal having a valence of 2–6, m and n are positive integers and m plus n is equal to the valence of the metal M. The R type groups, i.e., R, R1, R2, R3, and R4 represent an organo ligand.

Abstract: An aerosol delivery apparatus is used to deliver an aerosol into a reaction chamber for chemical reaction to produce reaction products such as nanoparticles. A variety of improved aerosol delivery approaches provide for the production of more uniform reaction products. In preferred embodiments, a reaction chamber is used that has a cross section perpendicular to the flow of reactant having a dimension along a major axis greater than a dimension along a minor axis. The aerosol preferably is elongated along the major axis of the reaction chamber.

Abstract: The invention provides an electrochemical cell which includes a first electrode and a second electrode which is a counter electrode to said first electrode, and an electrolyte material interposed there between. The first electrode includes an active material having an alkali metal-containing oligo phosphate-based electrode active material.

Abstract: A method of producing a single-phase composition Mn+1AzXn, primarily the production of the single-phase material Ti3SiC2, where n lies within a range of 0.8-3.2, where z lies within a range of 0.8-1.2, where M is at least one metal taken from the group of metals Ti (titanium), Sc (scandium), V (vanadium), Cr (chromium), Zr (zirconium), Nb (niobium) and Ta (tantalum), where X is at least one of the non-metals C (carbon) and N nitrogen), and where A is at least one of the chemical elements Si (silicon), Al (aluminum) and Sn (tin) or a compound of those elements, such that the final, desired compound will include the components Mn+1AzXn. A powder mixture of the components is formed and is ignited under an inert atmosphere to prevent promotion of dissociation and to cause the components to react.

Abstract: A method of forming a catalyst body by forming a first layer of hemispherical grain polysilicon over a substrate, and oxidizing at least a portion of the first layer to form a second layer of silica. Additionally, forming a third layer of nitride material over the second layer, and forming a catalyst material over the nitride layer, can be performed before annealing to form a catalyst body.

Abstract: The invention relates to a particulate product comprising at least one microprojectile; characterized in that the or at least one of the microprojectiles comprises silicon. The invention also relates to devices and components used in the microprojectile implantation of the particulate product to a target of cells or target tissue.

Abstract: A method of continuously producing a non-oxide ceramic formed of a metal constituent and a non-metal constituent. A salt of the metal constituent and a compound of the non-metal constituent and a compound of the non-metal constituent are introduced into a liquid alkali metal or a liquid alkaline earth metal or mixtures to react the constituents substantially submerged in the liquid metal to form ceramic particles. The liquid metal is present in excess of the stoichiometric amount necessary to convert the constituents into ceramic particles to absorb the heat of reaction to maintain the temperature of the ceramic particles below the sintering temperature. Ceramic particles made by the method are part of the invention.

Abstract: The disclosure describes an economical and environmentally benign method for using crystalline silicon metal kerf recovered from wiresaw slurries towards the fabrication of complex MEMS and MEMS components, including MEMS packages, with improved design features.

Abstract: A method of controllably altering the mineral matter transformation of mineral compositions such as, for example, vermiculitic micas, to achieve metamorphosed mineral compositions having specifically desired monatomic lattice defects is provided. Compositions formed in accordance with the method are also provided that exhibit physical properties desirable in a variety of industrial applications, including, for example, control and/or reduction of NOx, SOx, COx and other gaseous chemical species from industrial effluents, atmospheric control systems, fabrication and use of chemical detectors, and solid state electronic substrates and devices.

Abstract: A hard film formed of a material containing a (M1-xSix)(C1-dNd) compound, wherein M is at least one of Al and the elements in groups 3A, 4A, 5A and 6A, 0.45≦x≦0.98 and 0≦d≦1, where x, 1-x, d and 1-d are atomic ratios of Si, M, N and C, respectively.

Abstract: In high-tech fields such as electronics, the development of new high performance materials which differ from conventional materials has received much attention. An object of the present invention is to provide a clathrate compound which can be used as a thermoelectric material, a hard material, or a semiconductor material. Atoms of an element from group 4B of the periodic table are formed into a clathrate lattice, and a clathrate compound is then formed in which specified doping atoms are encapsulated within the clathrate lattice, and a portion of the atoms of the clathrate lattice are substituted with specified substitution atoms. Suitable doping atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 4A, group 5A, group 6A, and group 8, and suitable substitution atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 5A, group 6A, group 7A, group 5B, group 6B, group 7B, and group 8 of the periodic table.

Abstract: Silicon-chromium cathode targets having 5 to 80 weight percent chromium are used to sputter absorbing coatings of silicon-chromium-containing material in atmospheres of inert gas such as argon, reactive gases such as nitrogen, oxygen, and mixtures thereof to form metallic films and films of nitrides, oxides, and oxynitrides of metals. Chromium in the cathode target in the range of 5 to 80 weight percent provides target stability and enhanced sputtering rates over targets of silicon alone and are comparable to the target stability and sputtering rates of silicon-nickel targets, Chromium in the target may be replaced in part with nickel, preferably in the range of 5 to 15 weight percent, to produce coatings of silicon-chromium-nickel and the oxides, nitrides and oxynitrides thereof.

Abstract: A method of producing a single-phase composition Mn+1AzXn, primarily the production of the single-phase material Ti3SiC2, where n lies within a range of 0.8-3.2, where z lies within a range of 0.8-1.2, where M is at least one metal taken from the group of metals Ti (titanium), Sc (scandium), V (vanadium), Cr (chromium), Zr (zirconium), Nb (niobium) and Ta (tantalum), where X is at least one of the non-metals C (carbon) and N nitrogen), and where A is at least one of the chemical elements Si (silicon), Al (aluminum) and Sn (tin) or a compound of those elements, such that the final, desired compound will include the components Mn+1AzXn. A powder mixture of the components is formed and is ignited under an inert atmosphere to prevent promotion of dissociation and to cause the components to react.

Abstract: A rapid gelation, two-step method for the production of an aerogel precursor is disclosed. The method involves the addition of a small amount of catalyst during mixing of alcogel components in order to allow some pre-polymerization to occur. Next, the addition of the remainder of the catalyst quickly forms or gels the solution into the alcogel. The gelation of the solution to form the alcogel typically takes place in 5 to 60 seconds, but can be done in under 1 second and in as long as several hours. The gel time can be controlled specifically by adjusting the chemical contents of the solution and the amount of time between the two additions of catalyst. The resulting alcogel can then be processed further to form an aerogel which can be put to use in many unique applications including fabrics, insulative blocks, and microchips.

Abstract: A non-single crystalline semiconductor material includes coordinatively irregular structures characterized by distorted chemical bonding, reduced dimensionality and novel electronic properties. A process for forming the material permits variation of the size, concentration and spatial distribution of coordinatively irregular structures. The electronic properties of the material can be changed by controlling the characteristics of the coordinatively irregular structures.

Abstract: According to the present invention, a negative electrode material is provided. The negative electrode material is capable of storing and releasing lithium, and exhibits at least one peak of heat generation in the range of 200° C. to 450° C. in the differential scanning calorimetry (DSC) at a temperature rise speed of 10° C./min. and a peak derived from a crystalline phase in the X-ray diffraction.

Abstract: The present invention relates to the provision of materials intended for use in an oxidative medium at high temperatures, including the manufacture of high-temperature electric heaters, parts, sensors and tools operating at temperatures of up to 1900° C. and higher. On the basis of suicides—solid solutions (Mo,W)5Si3 and (Mo,W)Si2 as well as Novotn{grave over (y)} phase (Mo,W) 5Si3C containing molybdenum and tungsten, a heat-resistant material is proposed, which makes it possible to produce parts fully made therefrom and a broad range of other heat-resistant materials for the provision of protective coatings and soldered joints: “REFSIC” composite materials, carbon, silicon carbide materials, refractory metals and their alloys.

Abstract: In cycles of charging and discharging, an excellent capacity maintenance rate is obtained. The charging and discharging cycle characteristic of battery is enhanced. Further, an excellent initial discharging capacity is obtained. A negative electrode, a positive electrode, and a non-aqueous electrolyte are contained. The negative electrode includes an alloy of Si, a first element and a second element. The first element includes at least one element selected from the group consisting of the second group element except Mg in the periodic table, transition elements, twelfth group element, thirteenth group element except B, and fourteenth group element except Si. The second element includes at least one element of B and Mg.

Abstract: A composition useful for making in-situ silicon carbide whiskers and fibers in an inorganic composite matrix selected from silicon carbide carbon and carbon composite matrix, wherein the said composition comprises: Natural Fiber (1.6-6.5 Wt %); TetraEthyl Orthosilicate (10.4-42 Wt %); Phenolic Resin (38-73.5 Wt %); Curing agent (4.2-11 Wt %); Optionally, Silicon Carbide (9.4-12 Wt %); Organic Solvent (requisite amount to dissolve the Phenolic resin). The fiber preferably is a natural fiber selected from the group consisting of jute, sisal, hem and other natural fiber having cellulosic or hemicellulosic constituent at its backbone. The curing agent preferably is selected from hexamine, para toluenesulphonic acid and para formaldehyde, most preferably hexamine. The molecular weight of phenolic resin preferably is in the range of 450-700, and the organic solvent preferably is selected from methanol, toluene and benzene.

Abstract: The present invention relates to stevensite or kerolite type trioctahedral phyllosilicates 2:1 containing fluorine, fluorinated in synthesis in an acid medium and modified post-synthesis to bring about Si/Al and/or Mg/Al substitutions which impart acid properties to the solid. These phyllosilicates may be incorporated in the composition of catalysts used to convert hydrocarbons, in particular for hydrocracking.

Abstract: This invention discloses a process for making dilithium initiators in high purity. This process can be conducted in the absence of amines which is desirable since amines can act as modifiers for anionic polymerizations. The dilithium compounds made are highly desirable because they are soluble in aromatic solvents. The present invention more specifically discloses a process for synthesizing a dilithium initiator which comprises reacting disopropenylbenzene with a tertiary alkyl lithium compound in an aromatic solvent at a temperature which is within the range of about 0° C. to about 100° C. The present invention further discloses a process for synthesizing m-di-(1-methyl-3,3-dimethylbutyllithio)benzene which comprises reacting diisopropenylbenzene with tertiary-butyllithium in an aromatic solvent at a temperature which is within the range of about 0° C. to about 100° C.

Abstract: Dangling bonds of silicon atoms tend to take place in silicon oxide grown on a silicon wafer due to oxygen deficiency; hypofluorous acid is introduced into the silicon oxide so that the hypofluorous acid reaches the dangling bonds through diffusion; the hypofluorous acid is decomposed into fluorine atoms and hydroxyl groups, and the fluorine atoms and hydroxyl groups deactivate the dangling bonds of silicon atoms; even if electric charges are injected into the silicon oxide, the deactivation is never broken so that the silicon oxide layer is stable and highly reliable.

Abstract: An aerosol delivery apparatus is used to deliver an aerosol into a reaction chamber for chemical reaction to produce reaction products such as nanoparticles. A variety of improved aerosol delivery approaches provide for the production of more uniform reaction products. In preferred embodiments, a reaction chamber is used that has a cross section perpendicular to the flow of reactant having a dimension along a major axis greater than a dimension along a minor axis. The aerosol preferably is elongated along the major axis of the reaction chamber.

Abstract: A silicon based conductive material based on a semiconductor silicon and having an electric resistivity of 10−3(&OHgr;·m) or less at ambient temperature which has been unattainable heretofore, while facilitating production and handling. An electric resistivity of 10−6 (&OHgr;·m) or less, which is common for conductors can be realized by adding relatively large quantities of various kinds of elements to silicon. The conductive material can be provided in a semiconductor silicon substrate in a desired pattern by ion beam implantation and patterning. It can be employed not only in the form of a substrate, a rod or a wire, but also in the form of fine particles dispersed in a resin or glass to be employed in various applications requiring conduction, including a conductive sheet material.

Abstract: A negative electrode active material includes a composition A-B-C containing a first element A which is at least one selected from copper and iron, a second element B which is at least one selected from silicon and tin, and a third element C which is at least one selected from the group consisting of indium, antimony, bismuth, and lead. A nonaqueous electrolyte battery includes a negative electrode containing the negative electrode active material, a positive electrode containing a positive electrode active material, and a nonaqueous electrolyte. The nonaqueous electrolyte battery has a large discharge capacity and excellent cycle performance.

Abstract: Provided is an SiGe crystal having an improved performance index and excellent machinability as a material constituting a thermoelectric element, neither degradation in characteristics nor cracking occurring during use. Crystal grains forming the crystal are 5×10−5 mm3 or more in size.

Abstract: A silicon-based film of excellent photoelectric characteristics can be obtained by introducing a source gas containing silicon halide and hydrogen into the interior of a vacuum vessel, at least a part of the interior being covered with a silicon-containing solid, generating plasma in the space of the interior of the vacuum vessel, and forming a silicon-based film on a substrate provided in the interior of the vacuum vessel.

Abstract: A process is provided for forming a material comprising an M3X1Z2 phase comprising the steps of: (a) providing a mixture of (i) at least one transition metal species, (ii) at least one co-metal species selected from the group consisting of aluminum species, germanium species and silicon species, and (iii) at least one non-metal species selected from the group consisting of boron species, carbon species and nitrogen species; (b) heating said mixture to a temperature of about 1000° C. to about 1800° C., in an atmosphere within a substantially enclosed heating zone, for a time sufficient to form said M3X1Z2 phase; wherein the atmosphere has an O2 partial pressure of no greater than about 1×10−6 atm. The process provides a substantially single phase material comprising very little MZx-phase.

Abstract: The present invention provides a clathrate compound which can be used as a thermoelectric material, a hard material, or a semiconductor material. Silicon or carbon are formed into a clathrate lattice, and a clathrate compound is then formed in which specified doping atoms are encapsulated within the clathrate lattice, and a portion of the atoms of the clathrate lattice are substituted with specified substitution atoms. The clathrate lattice is, for example, a silicon clathrate 34 (Si34) mixed lattice of a Si20 cluster including a dodecahedron of Si atoms, and a Si28 cluster including a hexahedron of Si atoms. Suitable doping atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 4A, group 5A, group 6A, and group 8, and suitable substitution atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 5A, group 6A, group 7A, group 5B, group 6B, group 7B, and group 8 of the periodic table.

Abstract: A proportion of Cu3Si in a contact mass is determined by treating the mass with an inorganic ammonium salt, which selectively dissolves all forms of copper including free copper in deference to Cu3Si, which is not dissolved. An initial copper content of the contact mass is determined, the contact mass is treated with an inorganic ammonium salt composition to extract copper in a molecular form other than Cu3Si and extracted copper is subtracted from the initial copper content.

Abstract: A luminescent substance contains silicon and nitrogen as major components and has an amorphous structure. The silicon content of the luminescent substance is greater than the stoichiometric silicon content of Si3N4, and the luminous intensity of the luminescent substance has a maximum at approximately 2.2 eV. The luminescent substance has a high luminous efficiency and a short luminous decay lifetime. A light-emitting device includes this luminescent substance and a substrate. The luminescent substance can be readily formed on the substrate by a chemical vapor deposition process.

Abstract: A highly active bioactivating substance which exhibits suppressing action on histamine liberation and inhibition of hyaluronidase activity may be obtained by adding a silicate to an extracted substance from tissues activated by adding internal or external stressors to animals or animal tissues such as infecting with poxvirus. The highly active bioactivating substance may also be obtained by performing a special extraction to effect a high content of silicic acid in the extracted substance from the activated tissues. The bioactivating substance may be in the form of a powder and may have a silicon component content which is more than 20 &mgr;g, for example greater 22 &mgr;g, preferably greater than 25 &mgr;g, calculated as silicon per mg of dried substance.

Abstract: Silicon-chromium cathode targets comprising 5 to 80 weight percent chromium are disclosed for sputtering absorbing coatings of silicon-chromium alloy in atmospheres comprising inert gas, reactive gases such as nitrogen, oxygen, and mixtures thereof which may further comprise inert gas, such as argon, to form nitrides, oxides, and oxynitrides as well as metallic films. The presence of chromium in the cathode target provides target stability and enhanced sputtering rates over targets of silicon alone, comparable to the target stability and sputtering rates of silicon-nickel, for sputtering in oxygen, inert gas, nitrogen or a mixture of nitrogen and oxygen. The chromium in the target may be replaced in part with nickel to produce coatings of silicon-chromium-nickel and the oxides, nitrides and oxynitrides thereof.

Abstract: Disclosed is a powder consisting of particles of a cured fluoro-silicone rubber having a specified average particle diameter and a specified rubber hardness. The fluorosilicone rubber has a siloxane composition consisting of three types of units expressed by the unit formulas of [R1R2SiO2/2], [R22SiO2/2] and [R23SiO1/2], in which R1 is preferably a 3,3,3-trifluoropropyl group and R2 is preferably a methyl group, in such a proportion that the molar ratio of R1:(R1+R2) is in the range from 0.05 to 0.5. The powder is useful as an ingredient in a cosmetic or toiletry preparation to effect improved sustainability of the cosmetic finish and decreased unevenness of coloring on human skin.

Abstract: Silicon-chromium cathode targets comprising 5 to 80 weight percent chromium are disclosed for sputtering absorbing coatings of silicon-chromium alloy in atmospheres comprising inert gas, reactive gases such as nitrogen, oxygen, and mixtures thereof which may further comprise inert gas, such as argon, to form nitrides, oxides, and oxynitrides as well as metallic films. The presence of chromium in the cathode target in the range of 5 to 80 weight percent provides target stability and enhanced sputtering rates over targets of silicon alone, comparable to the target stability and sputtering rates of silicon-nickel, not only when sputtering in oxygen to produce an oxide coating, but also when sputtering in inert gas, nitrogen or a mixture of nitrogen and oxygen to produce coatings of silicon-chromium, silicon-chromium nitride or silicon-chromium oxynitride respectively.

Abstract: Rapid methods and means for hybridizing DNA, RNA and analogs thereof are provided. Hybridization occurs on a partition assembly through which nucleobase-containing sequences are driven by a force, such as centrifugal force, electrophoretic force, gravitational force vacuum force and/or pressure. The unbound sequences hybridize with complementary sequences bound to the partition assembly. The force applied to drive the sequences through the partition assembly increases the rate of hybridization by increasing the rate of collisions between complementary sequences.

Abstract: Catalysts that are useful for hydrocarbon conversions and oxygenate conversions, and a method for making such catalysts. The method for making the catalysts comprises forming a mixture comprising molecular sieves comprising pores having a diameter smaller than about 10 Angstroms, an inorganic sol, and an external phosphorus source, and drying the mixture.

Abstract: A novel material Si.sub.X C.sub.y N.sub.z, having a crystal structure similar to that of a.Si.sub.3 N.sub.4 with carbon atoms substituting most of the Si sites, is synthesized in crystalline form onto crystalline Si substrates by microwave plasma enhanced decomposition of carbon, silicon and nitrogen containing gasses.

Abstract: A high quality non-single-crystal silicon alloy material including regions of intermediate range order (IRO) silicon alloy material up to but not including the volume percentage required to form a percolation path within the material. The remainder of the material being either amorphous or a mixture of amorphous and microcrystalline materials. The materials were prepared by CVD using differing amounts of hydrogen dilution to produce materials containing differing amounts of IRO material. Preferably the material includes at least 8 volume percent of IRO material.

Abstract: The invention relates to a p-type silicon macromolecule, with a multifaceted structure in which silicon atoms form the corners of an inner multifaceted structure having sides. Attached to each silicon atom is a doping atom. The doping atoms are attached to the silicon atoms and radiate out from the center of the molecule to form an outer multi-faceted structure having sides parallel to the inner multifaceted structure. The macromolecule forms a base facility in a transistor that comprises an emitter layer, a collector layer, connected to the base facility, and a control input structure. The control input structure comprises a dipole connected to a boundary surface on the transistor and at least one external modulation capacitor connected to the dipole. The capacitor receives a carrier signal from a control input signal. The dipole is spaced from the center a boundary surface by half a wavelength of the carrier signal.

Abstract: Compounds of the formulae I and II ##STR1## are prepared by an addition reaction of a compound of the formula IIIR.sup.1 OH IIIwith an acetylene or allene of the formula IV or V ##STR2## where R.sup.1 and R are as defined, in the gas phase at elevated temperatures in the presence of a heterogeneous, silicate-containing catalyst, by a process in which the catalyst used is one which contains or consists of, as the active component, a zinc silicate obtained by precipitation in aqueous solution from a soluble silicon compound and zinc compound, zinc silicate beinga) an essentially X-ray amorphous zinc silicate of the formula VIZn.sub.a Si.sub.c O.sub.a+2c-0.5e (OH).sub.e.fH.sub.2 O VI,where e is from 0 to 2a+4c and the ratio a:c is from 1 to 3.5, and the ratio f:a is from 0 to 200, and/orb) a crystalline zinc silicate having the structure of hemimorphite of the formula Zn.sub.4 Si.sub.2 O.sub.7 (OH).sub.2.H.sub.2 O.

Abstract: The invention relates to a process for the preparation of crystalline sodium silicates having a sheet structure and high .delta. phase content from water glass, which has been prepared predominantly hydrothermally, by dehydration of the water glass and subsequent crystallization at elevated temperature, wherein the water glass is a mixture of water glass prepared hydrothermally and tank furnace water glass, and also to its use.

Abstract: Preparation of inorganic aerogels based on oxides of the metals magnesium, aluminum, silicon, tin, lanthanum, titanium, zirconium, chromium and/or thorium by producing a hydrogel in a sol/gel process, replacing the water in the hydrogel by an organic solvent, and drying the solvent-moist gel, takes place by conducting the drying step by exposing the solvent-moist gel to an ambient temperature which is above the boiling temperature of the solvent and at a pressure which is below the supercritical pressure of the solvent in such a way that the solvent within the gel is heated up very rapidly and evaporates.

Abstract: A method for selecting chemical grade silicon metalloid having improved performance in a direct process for making organohalosilanes. The method comprises (A) heating a chemical grade silicon metalloid sample at a temperature ramp speed controlled to effect a stepwise reduction of oxide impurities present in the chemical grade silicon metalloid to a temperature greater than about 2300.degree. C. in the presence of a carbon source thereby effecting the formation of a reduction product consisting of carbon monoxide and carbon dioxide, (B) determining the amount of the reduction product formed above a temperature of about 1900.degree. C., and (C) selecting a chemical grade silicon metalloid for use in the direct process for making organohalosilanes based upon the amount of the reduction product formed above a temperature of about 1900.degree. C.

Abstract: Products having single phases or solid solutions of the formula M.sub.3 X.sub.1 Z.sub.2 wherein M is a transition metal, X is Si, Al or Ge and Z is B, C or N can be prepared by taking a powdered mixture containing M, X and Z to a temperature of about 1000.degree. C. to about 1800.degree. C., optionally simultaneously under a pressure of about 5 MPa to about 200 MPa. The products so formed have excellent shock resistance, oxidation resistance and machinability. The products may also be present as composites, preferably composites which are in thermal equilibrium with the single phase or solid solutions of the formula M.sub.3 X.sub.1 Z.sub.2.

Abstract: The present invention provides a novel crystalline material Si.sub.x C.sub.y N.sub.z possessing a direct optical band gap of 3.8 eV. Many optoelectronic applications, such as blue light emitting diode and laser diode, may utilize this property.

Abstract: A non-oxide, transition metal based ceramic material has the general formula A.sub.y M.sub.2 Z.sub.x, wherein A is a group IA element, M is a transition metal and Z is selected from the group consisting of N, C, B, Si, and combinations thereof, and wherein x.ltoreq.2 and y.ltoreq.6-x. In these materials, the group IA element occupies interstitial sites in the metallic lattice, and may be readily inserted into or released therefrom. The materials may be used as catalysts and as electrodes. Also disclosed herein are methods for the fabrication of the materials.

Abstract: A treatment apparatus for analyzing the impurities in silicic material with high precision, includes a container having an inner space in which at least one analysis sample container and a sample decomposing solution are accommodated. The container is divided into a lid body and a lower body, each of the lid body and the lower body being opened at the division surface side thereof to form an open end and being closed at the surface side opposite to the division surface side to form a close end thereof. The inner peripheral surface of the open end of the lower body is formed in a stepwise shape so that the analysis sample container is disposed to be spaced from the surface of the decomposing solution which is stocked in the lower body, and the inner peripheral surfaces of the lid body and the lower body are smoothly continuously threadily engaged with each other through abutment faces thereof to keep the container in an appropriate hermetic level.

Abstract: Silicon sulfide is manufactured from the fine powder of silicon having a particle size in the range of 60 to 100.mu., covered thoroughly with sulfur at lower temperature less than 700.degree. C. in vacuum. In order to produce the silicon sulfide, silicon should be ground in a non-oxidizing atmosphere to prevent the formation of a silicon oxide layer that remains in the product and degrades the purity of the product. The silicon powder is dispersed sufficiently in the molten sulfur. At this time, the quantity of added sulfur needs more than 1.1 times in comparison with the stoichiometric quantity of silicon sulfide. All surfaces of silicon powder should be covered with sulfur to avoid sintering between silicon particles in the whole process of the reaction.