Abstract: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.

Abstract: Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.

Abstract: A silicon single crystal is grown by the CZ method. A silicon melt from which the crystal is grown is added with dopant such that the crystal has a resistivity of 0.025 to 0.08 ?cm. As well as the dopant, carbon is added to the silicon melt. The crystal is pulled in a hydrogen-bearing inert atmosphere.

Abstract: Provided is a thermal expansion inhibitor which has a much broader application range and which can be used with ease. Used is a thermal expansion inhibitor comprising a manganese nitride crystal.

Abstract: A process for the reversible storage of hydrogen, comprising bringing an alloy of alkaline metal and silicon into contact with gaseous hydrogen leading to the formation of the hydride or corresponding hydrides, comprises the use of at least one balanced system that corresponds to the formula: MXMSiMXMSiHn where M is selected from among Li, Na, or K and in which atomic ratios XM take on the following values: XLi=1 1?XNa?3 1?XK?2 n is the number of hydrogen atoms corresponding to the stoichiometry of the hydride or formed hydrides. or to the formula MSiXSiMSiXSiH2XSi+1 where M is selected from among Li, Na, or K and in which the atomic ratio XSi=Si/M takes on a value of 1 to 4.

Abstract: This metallic silicon is manufactured by refining molten crude metallic silicon by unidirectional solidification, and has a purity of 3N or more to 6N or less and an average crystal grain diameter of 1 mm or more. This method for manufacturing the metallic silicon includes: solidifying molten crude metallic silicon in a mold which contains fine silica particles in an inner peripheral layer thereof by unidirectional solidification at a rate of 1 mm/min or less; and then cooling to 200° C. or below at a rate of 2° C./min or less.

Abstract: Structures and methods for the fabrication of ceramic nanostructures. Structures include metal particles, preferably comprising copper, disposed on a ceramic substrate. The structures are heated, preferably in the presence of microwaves, to a temperature that softens the metal particles and preferably forms a pool of molten ceramic under the softened metal particle. A nano-generator is created wherein ceramic material diffuses through the molten particle and forms ceramic nanostructures on a polar site of the metal particle. The nanostructures may comprise silica, alumina, titania, or compounds or mixtures thereof.

Abstract: The present invention provides dental fillers having the optical and/or mechanical characteristics required to dental materials, a method of producing the same, and a dental composite material prepared with use of the dental filler. More specifically, the present invention provides a dental filler containing a zirconium silicate compound, especially a zirconium trisilicate compound with a wadeite type crystalline structure and having an average particle diameter in the range from 2 to 50,000 nm, a method of producing the same, a dental composite material containing the dental filler and a hardenable resin selected from an acrylic resin, a methacrylic resin, an epoxy resin, a vinyl resin, a urethane resin and the like.

Abstract: This invention is directed to compositions of matter comprising a hydride ion having a binding energy greater than about 0.8 eV. The claimed hydride ions may be combined with cations, including a proton, to form novel hydrides.

Abstract: A highly pure ultra-fine SiOx (wherein x is from 0.6 to 1.8) powder having a specific surface area of at least 10 m2/g and a total content of Na, Fe, Al and Cl of at most 10 ppm is provided. The SiOx powder is produced by reacting a monosilane gas with a gas capable of oxidizing the monosilane gas in a non-oxidizing gas atmosphere under a pressure of from 10 to 1000 kPa at a temperature of from 500 to 1000° C. In this case, the amount of the non-oxidizing gas is preferably larger than the total amount of the monosilane gas and oxygen participating in the oxidation of the gas capable of oxidizing the monosilane gas.

Abstract: Processes for curing silicon based low k dielectric materials generally includes exposing the exposing the silicon based low k dielectric material to ultraviolet radiation in an inert atmosphere having an oxidant in an amount of about 10 to about 500 parts per million for a period of time and intensity effective to cure the silicon based low k dielectric material so to change a selected one of chemical, physical, mechanical, and electrical properties and combinations thereof relative to the silicon based low k dielectric material prior to the ultraviolet radiation exposure. Also disclosed herein are silicon base low k dielectric materials substantially free of sub-oxidized SiO species.

Abstract: A nitridosilicate-based compound is produced by reacting an alkaline-earth metal compound capable of generating an alkaline-earth metal oxide by heating or a rare earth compound capable of generating a rare earth oxide by heating with at least a silicon compound, while the alkaline-earth metal compound or the rare earth compound is being reduced and nitrided by the reaction with carbon in an atmosphere of nitriding gas. Because of this, a nitridosilicate-based compound of high quality can be produced industrially at low cost.

Abstract: An active layer side silicon wafer is heat-treated in an oxidizing atmosphere to thereby form a buried oxide film therein. The active layer side silicon wafer is then bonded to a supporting side wafer with said buried oxide film interposed therebetween thus to fabricate an SOI wafer. Said oxidizing heat treatment is carried out under a condition satisfying the following formula: [Oi]?2.123×1021exp(?1.035/k(T+273)), where, T is a temperature of the heat treatment, and [Oi] (atmos/cm3) is an interstitial oxygen concentration.

Abstract: A process for producing a silicon nitride compound is presented. A starting solution comprising fluorosilicic acid is provided. The starting solution is derived from a silicon, etching process wherein silicon is etched with a solution comprising hydrofluoric acid and where silicon powder has been removed. The starting solution is heated to yield a vapor solution comprising silicon tetrafluoride, hydrogen fluoride, and water. The hydrogen fluoride is separated from the vapor solution wherein a pure stream of silicon tetrafluoride and water vapor remain. The silicon tetrafluoride and water vapor are hydrolyzed to yield a concentrated fluorosilicic acid solution. The fluorosilicic acid is reacted with a base to yield a fluorosilicic salt. The fluorosilicic salt is heated to yield anhydrous silicon tetrafluoride. The anhydrous silicon tetrafluoride is reacted with a metal hydride to yield a monosilane. The monosilane is reacted to form a silicon compound and a silicon nitride compound.

Abstract: A nitridosilicate-based compound is produced by reacting an alkaline-earth metal compound capable of generating an alkaline-earth metal oxide by heating or a rare earth compound capable of generating a rare earth oxide by heating with at least a silicon compound, while the alkaline-earth metal compound or the rare earth compound is being reduced and nitrided by the reaction with carbon in an atmosphere of nitriding gas. Because of this, a nitridosilicate-based compound of high quality can be produced industrially at low cost.

Abstract: Pyrogenically produced silicon dioxide powder with a specific surface area of between 5 and 600 m2/g and a carbon content of less than 500 ppm, which displays a specific dibutyl phthalate absorption of less than or equal to 1.2 g dibutyl phthalate/100 g SiO2 per m2 of specific surface area and a specific thickening action of less than 15 mPas/m2 of specific surface area. It is produced by supplying vaporous tetramethoxysilane and/or tetraethoxysilane together with air and separately hydrogen to a burner, and allowing the mixture of gases to react in a flame in a reaction chamber connected in series to the burner, and separating the solid reaction product from the gas stream by known means, the lambda value in the burner being between 0.95 and 1.5 and sufficient secondary air also being supplied to the reaction chamber that the lambda value in the reaction chamber is between 0.8 and 1.6.

Abstract: An electrode material for an anode of a rechargeable lithium battery, containing a particulate comprising an amorphous Sn.A.X alloy with a substantially non-stoichiometric ratio composition. For said formula Sn.A.X , A indicates at least one kind of an element selected from a group consisting of transition metal elements, X indicates at least one kind of an element selected from a group consisting of O, F, N, Mg, Ba, Sr, Ca, La, Ce, Si, Ge, C, P, B, Pb, Bi, Sb, Al, Ga, In, Tl, Zn, Be, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, As, Se, Te, Li and S, where the element X is not always necessary to be contained. The content of the constituent element Sn of the amorphous Sn.A.X alloy is Sn/(Sn+A+X)=20 to 80 atomic %.

Abstract: Provided is a semiconductor doped with an increased binding energy hydrogen species and a method of making the doped semiconductor.

Abstract: An anode active material that can prominently improve lifetime characteristics of a lithium secondary battery includes carbon nanotubes and silicon particles located in an internal space of the carbon nanotubes. The anode active material is manufactured by removing end caps of the carbon nanotubes to provide carbon nanotubes having lengths in the range of 0.1 to 10 ?m, and filling an interior space of the carbon nanotubes with silicon particles. In addition, a lithium secondary battery comprises an anode including an anode collector and the anode active material, a cathode including a cathode collector and cathode active material, and a separator interposed between the anode and the cathode. The anode active material includes carbon nanotubes and silicon particles located in internal spaces of the carbon nanotube.

Abstract: The negative active material for a rechargeable lithium battery of the present invention includes a carbonaceous material and a silicon-based compound represented by Formula 1: Si(1-y)MyO1+x(1) where 0?y?1, ?0.5?x?0.5, and M is selected from the group consisting of Mg, Ca, and mixtures thereof.

Abstract: A hydrogen storage material is expressed by a composition formula, (Ca1-xAx)1-z(Si1-yBy)z, wherein “A” is at least one member selected from the group consisting of alkali metal elements, alkaline-earth metal elements, rare-earth elements, the elements of groups 3 through 6, Ni, Au, In, Tl, Sn, Fe, Co, Cu and Ag; “B” is at least one member selected from the group consisting of the elements of groups 7 through 17, rare-earth elements, Hf and Be; 0?x<1 by atomic ratio; 0?y<1 by atomic ratio; and 0.38?z?0.58 by atomic ratio. It is lightweight as well as less expensive. In principle, neither high-temperature nor high-pressure activation is required, because it exhibits a high initial activity. The operation temperature can be lowered and the hydrogen absorption content can be enlarged by controlling the kind and substitution proportion of the substituent elements appropriately.

Abstract: The invention provides adducts comprising a carbon nanotube with covalently attached silane moieties, and methods of making such adducts. Examples of silane moieties include trimethoxysilane; hexaphenyldisilane; silylphosphine; 1,1,1,3,5,5,5-heptamethyltrisiloxane; polydimethylsiloxane, poly(N-bromobenzene-1,3-disulfonamide); N,N,N?,N?-tetrabromobenzene-1,3-disulfonamide; hexamethyldisilazane (HMDS); chlorotrimethylsilane (TMCS); trichloromethylsilane (TCMS); an alkyl(alkylamino)silane; a tri(alkoxy)silane; tert-butyldimethylsilane; monochloroaminosilane; dichloroaminosilane; trichloroaminosilane; and dimethylaminosilane.

Abstract: The present invention provides silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the compounds. The compounds are defined by formula: SiHnI (GeHn2)y, wherein y is 2, 3, or 4 wherein n1 is 0 1, 2 or 3 to satisfy valency and wherein n2 is independently 0, 1, 2 or 3 for each Ge atom in the compound, to satisfy valency.

Abstract: The present invention relates to new compositions of matter, particularly metals and alloys, and methods of making such compositions. The new compositions of matter exhibit long-range ordering and unique electronic character.

Abstract: Provided is a thermal expansion inhibitor which has a much broader application range and which can be used with ease. Used is a thermal expansion inhibitor comprising a manganese nitride crystal.

Abstract: An object is to provide a polishing carrier that can prevent scratches from occurring on the edge face of a substrate, and prevent debris from being produced from the edge face, while a single crystal silicon substrate, which is fragile, and has a high cleavage strength, is polished, and to make it difficult for debris to be produced due to rubbing against a cassette when it is stored in a cassette in subsequent processing, and prevent the substrate from being broken. Therefore a part of the internal circumference of a substrate holding hole in a polishing carrier, that makes contact with the silicon substrate is formed from a cushion whose hardness is less than that of the silicon substrate. For the cushion, any type selected from for example suede, polyamide resin, polypropylene resin, or epoxy resin may be used. Especially, the use of epoxy resin is desirable.

Abstract: A system and process for gasification of a carbonaceous feedstock uses pyrolysis to produce a gas product, which may include methane, ethane, and other desirable hydrocarbon gases, and a solids product, which includes activated carbon or carbon. The gas product may then be filtered using at least a portion of the activated carbon from the solids product as a filtering medium. In an embodiment, at least some of the noxious chemicals are sequestered or removed from the gas product in one or more filtering steps using the activated carbon as a filtering medium. In a further embodiment, the filtering steps are performed in stages using activated carbon at different temperatures. A high-temperature pyrolysis system that produces activated carbon may be combined with another high-temperature pyrolysis system that does not produce activated carbon to provide filtering of noxious compounds using activated carbon from the first high-temperature pyrolysis system.

Abstract: The negative active material for a rechargeable lithium battery of the present invention includes a carbonaceous material and a silicon-based compound represented by Formula 1: Si(1-y)MyO1+x ??(1) where 0<y<1, ?0.5?x?0.5, and M is selected from the group consisting of Mg, Ca, and mixtures thereof.

Abstract: The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si136-yGey, where y indicates the number of Ge atoms present in the main framework and 136-y indicates the number of Si atoms present in the main framework, and wherein y>0.

Abstract: A product for reinforcing the natural plant defense system a mixture of one or several silicon-rich substances (A), one or more activators of plant immune system (B) and substance (C) which supply to (A) and (B) activity. Activators are substances or physical effects and substances, which transport the information about stress and provide the synthesis of non specific and/or specific stress-proteins, stress ferments and other stress-protecting substances to the plant cells. Using various forms of Si-rich substances will help plants to synthesize non-specific, specific substances and ferments which protect plants against stress. The substance (C) could serve for optimization of plant growth or for reinforcing Si or the activator component and they can be added to the new product also. The application of all these ingredients can be conducted via soil application (both broadcasting and incorporation) together with the irrigation water, by foliar applications or as dust application.

Abstract: This invention relates to a solid divided composition comprising grains whose mean size is greater than 25 ?m and less than 2.5 mm, wherein each grain is provided with a solid porous core and a homogeneous continuous metal layer consisting of at least one type of transition non-oxidised metal and extending along a gangue coating the core in such a way that pores are inaccessible. A method for the production of said composition and for the use thereof in the form of a solid catalyst is also disclosed.

Abstract: A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AIN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

Abstract: The present invention provides novel compounds of the formula Gei-x-ySixSny, wherein 0.01<y<0.11, and 0.26<x<0.35, and semiconductor structures comprising such compounds. The present invention also provides novel semiconductor structures comprising silicon substrates, an SiGe buffer layer, and a Group III-V or II-VI active layer. The present invention also provides novel semiconductor structures comprising silicon substrates, an SiGe buffer layer, an SiGeSn template layer, and an SiGe, Ge, Group III-V, or Group II-VI active layer.

Abstract: A process for recovering nickel and cobalt values from nickel- and cobalt-containing laterite ores as an enriched mixed nickel and cobalt sulphide intermediate and for producing nickel and cobalt metal from the nickel and cobalt sulphide intermediate. The laterite ore is leached as a slurry in a pressure acid leach containing an excess of aqueous sulphuric acid at high pressure and temperature, excess free acid in the leach slurry is partially neutralized to a range of 5 to 10 g/L residual free H2SO4 and washed to yield a nickel- and cobalt-containing product liquor, the product liquor is subjected to a reductant to reduce any Cr(VI) in solution to Cr(III), the reduced product liquor is neutralized to precipitate ferric iron and silicon at a pH of about 3.5 to 4.0, and the neutralized and reduced product liquor is contacted with hydrogen sulphide gas to precipitate nickel and cobalt sulphides.

Abstract: A production method, comprising a step of synthesizing silicon particle-containing silicon oxide particles by performing a gas phase reaction of monosilane gas and oxidizing gas for oxidizing the monosilane gas and a step of removing the silicon oxide with hydrofluoric acid after holding the silicon oxide particle powder in an inert atmosphere at 800-1400?, provides high-purity silicon nanoparticles which are highly practical as material powder for high-performance light-emitting elements and electronic parts in an industrial scale.

Abstract: A method for the preparation of aerogels that involves the exchange of the liquid present in the aquagel with xenon and the subsequent extraction thereof.

Abstract: There is obtained a silicon wafer which has a large diameter, where no slip generated therein in a wide range of a density of oxygen precipitates even though a heat treatment such as SLA or FLA is applied thereto, and which has high strength. First, by inputting as input parameters combinations of a plurality of types of oxygen concentrations and thermal histories set for manufacture of a silicon wafer a Fokker-Planck equation is solved to calculate each of a diagonal length L and a density D of oxygen precipitates in the wafer after a heat treatment step to form the oxygen precipitates (11) and immediately before a heat treatment step of a device manufacturing process is calculated.

Abstract: A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structures are found to have unprecedented stability.

Abstract: In the carbon science literature, there have been various reports over the previous few decades of potentially novel crystalline forms of carbon emerging as nanometer scale fragments recovered from the explosive remnants of heated, shock compressed graphite and other precursors of C. Two nanometric and crystalline forms of C that are particularly prominent in these studies are the so-called n-diamond and i-carbon forms. In previous work by us, we have shown that the commonly observed diffraction pattern of n-diamond nanocrystals recorded by several research groups around the world, is consistent with the calculated diffraction pattern of a novel form of carbon we have proposed called glitter. Glitter is a tetragonal allotrope of carbon with a calculated density of about 3.08 g/cm3, and the density functional theory (DFT-CASTEP) optimized lattice parameters given as a=0.2560 nm and c=0.5925 nm.

Abstract: The invention concerns a peroxosilicated, optionally phosphatized, disinfecting compound with scale preventive effect obtained by reacting an alkaline or alkaline-earth metasilicate with an active oxygen-releasing compound, for example potassium monopersulphate and/or oxygen peroxide, in inert medium. The compound can be stabilized with sodium hexametaphosphate. Copper and aluminium in salt form can be encapsulated or complexed with the metasilicate so that the resulting peroxosilicated compound can be used for its disinfecting, scale preventive, anticorrosive, flocculating and algicidal properties for more than three weeks.

Abstract: A system for hydrogen storage comprising a porous nano-structured material with hydrogen absorbed on the surfaces of the porous nano-structured material. The system of hydrogen storage comprises absorbing hydrogen on the surfaces of a porous nano-structured semiconductor material.

Abstract: The present invention relates to a single crystal silicon ingot or wafer wherein the lateral incorporation effect of intrinsic point defects has been manipulated such that the formation of agglomerated intrinsic point defects and/or oxygen precipitate clusters in a ring extending radially inward from about the lateral surface of the ingot segment is limited.

Abstract: A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm2) of surface area that has a basal plane dislocation volume density of less than about 500 cm?2 for a 4 degree off-axis wafer.

Abstract: This invention presents a process to produce bulk quantities of nanowires of a variety of semiconductor materials. Large liquid gallium drops are used as sinks for the gas phase solute, generated in-situ facilitated by microwave plasma. To grow silicon nanowires for example, a silicon substrate covered with gallium droplets is exposed to a microwave plasma containing atomic hydrogen. A range of process parameters such as microwave power, pressure, inlet gas phase composition, were used to synthesize silicon nanowires as small as 4 nm (nanometers) in diameter and several micrometers long. As opposed to the present technology, the instant technique does not require creation of quantum sized liquid metal droplets to synthesize nanowires. In addition, it offers advantages such as lower growth temperature, better control over size and size distribution, better control over the composition and purity of the nanowires.

Abstract: A silicon wafer that has a carbon concentration of 5×1015 to 5×1017 atoms/cm3, interstitial oxygen concentration of 6.5×1017 to 13.5×1017 atoms/cm3, and a resistivity of 100 ?cm or more.

Abstract: This invention presents a process to produce bulk quantities of nanowires of a variety of semiconductor materials. Large liquid gallium drops are used as sinks for the gas phase solute, generated in-situ facilitated by microwave plasma. To grow silicon nanowires for example, a silicon substrate covered with gallium droplets is exposed to a microwave plasma containing atomic hydrogen. A range of process parameters such as microwave power, pressure, inlet gas phase composition, were used to synthesize silicon nanowires as small as 4 nm (nanometers) in diameter and several micrometers long. As opposed to the present technology, the instant technique does not require creation of quantum sized liquid metal droplets to synthesize nanowires. In addition, it offers advantages such as lower growth temperature, better control over size and size distribution, better control over the composition and purity of the nanowires.

Abstract: An electrode composition for a lithium ion battery having the formula SixSnqMyCz where q, x, y, and z represent atomic percent values and (a) (q+x)>2y+z; (b) q?0, (c) z?0; and (d) M is one or more metals selected from manganese, molybdenum, niobium, tungsten, tantalum, iron, copper, titanium, vanadium, chromium, nickel, cobalt, zirconium, yttrium, or a combination thereof. The Si, Sn, M, and C elements are arranged in the form of a multi-phase microstructure comprising: (a) an amorphous phase comprising silicon; (b) a nanocrystalline phase comprising a metal silicide; and (c) a phase comprising silicon carbide phase when z>0; and (d) an amorphous phase comprising Sn when q>0.

Abstract: An electrode material for an anode of a rechargeable lithium battery, containing a particulate comprising an amorphous Sn.A.X alloy with a substantially non-stoichiometric ratio composition. For said formula Sn.A.X, A indicates at least one kind of an element selected from a group consisting of transition metal elements, X indicates at least one kind of an element selected from a group consisting of O, F, N, Mg, Ba, Sr, Ca, La, Ce, Si, Ge, C, P, B, Pb, Bi, Sb, Al, Ga, In, Tl, Zn, Be, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, As, Se, Te, Li and S, where the element X is not always necessary to be contained. The content of the constituent element Sn of the amorphous Sn.A.X alloy is Sn/(Sn+A+X)=20 to 80 atomic %.

Abstract: A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.003 ?·cm.

Abstract: The invention relates to a ceramic material comprising at least one transition metal silicate and/or transition metal disilicate. The ceramic material can be characterized by having one or more monosilicates, one or more disilicates and mixtures consisting of monosilicates and disilicates.