Abstract: Advanced environmental barrier coating bond coat systems with higher temperature capabilities and environmental resistance are disclosed. These bond coat systems can be applied to ceramic substrates such as SiC/SiC ceramic matrix composite substrates, and can provide protection from extreme temperature, mechanical loading and environmental conditions, such as in high temperature gas turbines. Example bond coat systems can include either an advanced silicon/silicide component, an oxide/silicate component, or a combination thereof.

Abstract: A method of forming a metal chalcogenide material. The method comprises introducing a metal precursor and a chalcogenide precursor into a chamber, and reacting the metal precursor and the chalcogenide precursor to form a metal chalcogenide material on a substrate. The metal precursor is a carboxylate of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid. The chalcogenide precursor is a hydride, alkyl, or aryl precursor of sulfur, selenium, or tellurium or a silylhydride, silylalkyl, or silylaryl precursor of sulfur, selenium, or tellurium. Methods of forming a memory cell including the metal chalcogenide material are also disclosed, as are memory cells including the metal chalcogenide material.

Abstract: A fluidized bed reactor is disclosed. The fluidized bed reactor includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas comprising silicon elements to the silicon particles provided in the reaction pipe; and a heater unit configured to supply heat to an internal space of the reaction pipe, with a heater channel in which inert gas flows serially.

Abstract: A fluidized bed reactor is disclosed. The fluidized bed reactor includes a head; a first body part connected with the head, located under the head, the first body part having a first reaction pipe provided therein; a second body part connected with the first body part, located under the first body part, the second body part having a second reaction pipe provided therein; and a bottom part connected with the second body part, located under the second body part, the bottom part having a flowing-gas supply nozzle, a reaction gas supply nozzle, a heater and an electrode assembled thereto.

Abstract: A silicon wafer preferable to a semiconductor device is produced by determining a heat treatment condition hardly causing slip dislocations and heat-treating the silicon wafer under the condition. The resistance is calculated by using a calculation formula used for predicting the slip resistance of the wafer from the density, size, and residual solid-solution oxygen concentration of the oxygen precipitation in the silicon wafer, the state of oxygen precipitation such that heat treatment not causing any slip dislocation can be carried out is designed, and thus a silicon wafer heat treatment method under the heat treatment condition not causing any slip dislocation is determined. A silicon wafer heat-treated under such a condition can be provided.

Abstract: A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 ?s and about 9.9 ?s.

Abstract: A uniform Si—NH—Si terminated Si(111) surface is formed by contacting a chlorine-terminated silicon surface with ammonia and a solvent such as an ether.

Abstract: A method for preparation of high purity silicon suitable for photovoltaic cells using reduction of silica, which is pre-purified in an aqueous solution, in presence of a reducing agent, preferably carbonaceous agent, where the pre-purified silica has a low amount of boron suitable for photovoltaic cells is described.

Abstract: The present invention is directed to a condensed phase batch process for synthesis of trisilylamine (TSA). An improved synthesis method that incorporates a solvent to help promote a condensed-phase reaction between ammonia gas (or liquid) and liquified monochlorosilane (MCS) in good yields is described. This method facilitates the removal of the byproduct waste with little to no reactor down time, substantial reduction of down-stream solids contamination and high-purity product from first-pass distillation.

Abstract: A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-xSiHx, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.

Abstract: Disclosed are a negative active material for a secondary lithium battery and a secondary lithium battery including the same. The negative active material for a secondary lithium battery includes an amorphous silicon-based compound represented by the following Chemical Formula 1. SiAxHy??Chemical Formula 1 In Chemical Formula 1, A is at least one element selected from C, N, or a combination thereof, 0<x, 0<y, and 0.1?x+y?1.5.

Abstract: Disclosed herein is a method of preparing a fused aerogel-polymer composite in which aerogel and an organic polymer is mixed in a dry state to adsorb polymer particles on the surface of the aerogel and are then subjected to thermal treatment, thus forming a polymer coating on the aerogel. The fused aerogel-polymer composite can be used for thermal insulation in a variety of applications. The fused aerogel-polymer composite exhibits high thermal insulation properties and superior physical strength and processability while still maintaining the properties of an aerogel that does not have a polymer coated on its surface.

Abstract: The present invention provides a metal material comprising an alloy that is represented by the compositional formula Mn3-xM1xSiyAlzM2a, wherein M1 is at least one element selected from the group consisting of Ti, V, Cr, We, Co, Ni, and Cu; M2 is at least one element selected from the group consisting of B, P, Ga, Ge, Sn, and Bi, where 0?x?3.0, 3.5?y?4.5, 2.5?z?3.5, and 0?a?1, the alloy having a negative Seebeck coefficient and an electrical resistivity of 1 m?·cm or less at a temperature of 25° C. or higher. The metal material of the present invention is a novel material that has good thermoelectric conversion capability in the intermediate temperature region and excellent durability, and that is useful as an n-type thermoelectric conversion material.

Abstract: The present invention relates a method for producing clathrate compounds, comprising producing a homogeneous melt containing the desired elements in the desired ratio, and subsequently solidifying said melt to obtain the clathrate compound by quickly cooling the melt.

Abstract: The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.

Abstract: This invention provides a dense, high-purity colloidal silica containing silica secondary particles having a branched and/or bent structure, and a production method thereof. Specifically, this invention provides a method for producing a colloidal silica, comprising the steps of 1) preparing a mother liquid containing an alkali catalyst and water, and having a pH of 9 to 12; and 2) adding a hydrolysis liquid obtained by hydrolysis of an alkyl silicate to the mother liquid, wherein the step of adding the hydrolysis liquid to the mother liquid sequentially comprises A) step 1 of adding the hydrolysis liquid until the pH of the resulting liquid mixture becomes less than 7; B) step 2 of adding an aqueous alkali solution until the pH of the liquid mixture becomes 7 or more; and C) step 3 of adding the hydrolysis liquid while maintaining the pH of the liquid mixture at 7 or more, and a colloidal silica containing silica secondary particles having a branched and/or bent structure, obtained by this method.

Abstract: In one embodiment, a method for cooling a reaction effluent gas includes feeding a sufficient amount of a suitable silicon source cooling gas into a stream of the reaction effluent gas, wherein the reaction effluent gas is produced by a thermal decomposition of at least one silicon source gas in a reactor, and wherein sufficient amount of the suitable silicon source cooling gas is defined based a concentration of the at least one chemical species in the reaction effluent gas; cooling the reaction effluent gas to a sufficient temperature so that: the cooled reaction effluent gas is capable of being handled by a material that is not suitable for handling the reaction effluent gas.

Abstract: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.

Abstract: Disclosed is a belt for an image forming apparatus including a releasing coating layer including a layered inorganic compound.

Abstract: There is described an apparatus, a tubular laminar flow, plug flow reactor, for making silylamines and particularly trisilylamine (TSA) in high yields from ammonia gas and a monohalosilane gas. The apparatus can be a tubular flow reactor comprising a first portion of the reactor defining a gas entry zone, a second portion of the reactor defining a reaction zone and a third portion of the reactor defining a separation zone, the reaction zone providing a reactant contacting region. Trisilylamine can be recovered in the separation zone in a cold trap collection vessel.

Abstract: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.

Abstract: The present invention is directed to a condensed phase batch process for synthesis of trisilylamine (TSA). An improved synthesis method that incorporates a solvent to help promote a condensed-phase reaction between ammonia gas (or liquid) and liquified monochlorosilane (MCS) in good yields is described. This method facilitates the removal of the byproduct waste with little to no reactor down time, substantial reduction of down-stream solids contamination and high-purity product from first-pass distillation.

Abstract: A method is provided for treating silica sand scrubs (SSS) generated and accumulated as waste in the chloride manufacturing process of titanium dioxide pigment. A hydrothermal process is used to produce sodium silicate solutions of modulus 3.0 to 3.8, and precipitated silicas. In some embodiments, the process uses two specific principal reaction stages. A sodium silicate solution having a low SiO2:Na2O molar ratio, in the range from 2.0 to 2.8, is first produced by reaction of the SSS, as a cost-effective SiO2 source, with aqueous caustic soda. The conversion of this intermediate sodium silicate solution of low modulus to a high SiO2:Na2O molar ratio is made possible by using a SiO2 source that is prepared as precipitated amorphous silica from the intermediate sodium silicate solution produced above.

Abstract: Disclosed are liquid phase synthesis methods to produce trisilylamine.

Abstract: Provided is a method of purifying monosilane. More particularly, the method includes removing impurities from a crude material containing monosilane and ethylene by fractional distillation (operation 1), and removing ethylene and residual impurities by passing the crude material purified in operation 1 through activated carbon (operation 2). According to the method, high-purity monosilane may be more simply and effectively obtained without additional production of byproducts by selectively adsorbing ethylene, which is difficult to separate by fractional distillation, using an activated carbon.

Abstract: In one embodiment of the invention, the silane and hydrogen (and inert gas) mixture is produced using catalytic gasification of silicon (or si-containing compounds including silicon alloys) with a hydrogen source such as hydrogen gas, atomic hydrogen and proton. By not separating silane from hydrogen and co-purifying all the gases (silane and hydrogen, inert gas) in the gas mixture simultaneously, the mixture is co-purified and then provide feed stock for downstream application without further diluting the silane gas. One aspect of the invention addresses the need for an improved production method, apparatus and composition for silane gas mixtures for large scale low cost manufacturing of high purity silicon and distributed on-site turnkey applications including but not limited to the manufacture of semiconductor integrated circuits, photovoltaic solar cells, LCD-flat panels and other electronic devices.

Abstract: The invention relates to a method for preparing a composition, that is a talcose composition, comprising synthetic mineral particles which contain silicon, germanium and metal, have a crystalline and lamellar structure, and are of formula (SixGe1?x)4M3O10(OH)2, wherein M is at least one divalent metal and is of formula Mgy(1)COy(2)Zny(3)Cuy(4)Mny(5)Fey(6)Niy(7)Cry(8), and x is a real number of the interval [0; 1]. According to said method, a gel containing silicon, germanium and metal, of formula —(SixGe1?x)4M3O11, n?H2O—, in the liquid state, is subjected to a hydrothermal treatment over a defined period of time and at a temperature of between 300° C. and 600° C., said time and temperature being selected according to the desired particle size and structural stability for the mineral particles containing silicon, germanium and metal, to be prepared.

Abstract: The invention provides metal oxide particles surface-treated with at least one alkoxysilane compound, methods of making such, and toners comprising same.

Abstract: The present invention is directed to a condensed phase batch process for synthesis of trisilylamine (TSA). An improved synthesis method that incorporates a solvent to help promote a condensed-phase reaction between ammonia gas (or liquid) and liquified monochlorosilane (MCS) in good yields is described. This method facilitates the removal of the byproduct waste with little to no reactor down time, substantial reduction of down-stream solids contamination and high-purity product from first-pass distillation.

Abstract: Disclosed is a phosphor and a method for preparing the same. The phosphor comprises a material having a general composition formula expressed by M1Si6N8?xOx (satisfying 0?x?1), where M is alkaline earth metal.

Abstract: A photocatalyst produced from an easily available, relatively low-cost silicon oxide material is disclosed which is capable of decomposing environmental pollutants with improved efficiency. The photocatalyst is produced by pulverizing an artificial crystal, specifically machining waste thereof, into powder particles having a particle diameter of not more than 3.0 mm and then immersing the particles into a solution containing a hydrogen fluoride for activation. Environmental pollutants such as nitrogen oxides (NOx) and harmful organic compounds can be efficiently decomposed by coming into contact with this photocatalyst while being irradiated with activation light under oxidizing conditions.

Abstract: Adhesive and sealant systems Adhesive and sealant systems on the basis of unsaturated polyester resins, epoxy resins, polyurethane, silane-terminated polymers, vinyl ester resins, acrylates, polyvinyl acetate, polyvinyl alcohol, polyvinyl ethers, ethylene-vinyl acetate, ethylene-acrylic acid copolymers, polyvinyl acetates, polystyrene, polyvinyl chloride, styrene-butadiene rubber, chloroprene rubber, nitrile rubber, butyl rubber, polysulphide, polyethylene, polypropylene, fluorinated hydrocarbons, polyamides, saturated polyesters and copolyesters, phenol-formaldehyde resins, cresol-/resorcinol-formaldehyde resins, urea-formaldehyde resins, melamine-formaldehyde resins, polyimides, polybenzimidazoles or polysulphones and containing 1% to 15% by weight of a hydrophilic fumed silica structurally modified by grinding.

Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

Abstract: The invention provides structurally modified, pyrogenically prepared silicas obtained by reaction of pyrogenic silicas with cyclic polysiloxanes of the type —[O—Si(R2)]n—, where R is a C1 to C6 alkyl group and n is 3 to 9, and subsequent structural modification of the silanized silicas obtained. The invention further provides an adhesive comprising the structurally modified, pyrogenically prepared silicas.

Abstract: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.

Abstract: In the apparatus for producing trichlorosilane in which metal silicon powder supplied into the reactor is reacted with hydrogen chloride gas while being fluidized by the gas, thereby taking out trichlorosilane generated by the reaction from the upper part of the reactor, and a plurality of gas flow controlling members are installed at the internal space of the reactor along the vertical direction.

Abstract: Compositions and methods for controlled polymerization and/or oligomerization of silane (and optionally cyclosilane) compounds, including those of the general formulae SinH2n and SinH2n+2, as well as halosilanes and arylsilanes, to produce soluble polysilanes, polygermanes and/or polysilagermanes having low levels of carbon and metal contaminants, high molecular weights, low volatility, high purity, high solubility and/or high viscosity. The polysilanes, polygermanes and/or polysilagermanes are useful as a precursor to silicon- and/or germanium-containing conductor, semiconductor and dielectric films.

Abstract: A process for preparing hydrogenated polygermasilane as a pure compound or mixture of compounds includes hydrogenating halogenated polygermasilane.

Abstract: A method is provided for treating silica sand scrubs (SSS) generated and accumulated as waste in the chloride manufacturing process of titanium dioxide pigment. A hydrothermal process is used to produce sodium silicate solutions of modulus 3.0 to 3.8, and precipitated silicas. In some embodiments, the process uses two specific principal reaction stages. A sodium silicate solution having a low SiO2:Na2O molar ratio, in the range from 2.0 to 2.8, is first produced by reaction of the SSS, as a cost-effective SiO2 source, with aqueous caustic soda. The conversion of this intermediate sodium silicate solution of low modulus to a high SiO2:Na2O molar ratio is made possible by using a SiO2 source that is prepared as precipitated amorphous silica from the intermediate sodium silicate solution produced above.

Abstract: The present disclosure provides an illuminating system including a light emitting diode (LED); and a tunable luminescent material disposed approximate the light-emitting diode, wherein the tunable luminescent material includes alkaline earth metal (AE) and silicon aluminum nitride doped by a rare earth element (RE), formulated as (AE)Si6?pAlpN8, wherein p is a parameter defining a relative aluminum content in weight and p is greater than zero.

Abstract: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.

Abstract: Disclosed are high resistivity silicon wafers, wherein the interstitial oxygen concentration thereof is 8×1017 atoms/cm3 (ASTM F121-1979) or less, BMD (Bulk Micro Defect) density—oxygen precipitate within wafer—is 5×107 pieces/cm3 or less, and an electric resistivity thereof is 100 ?·cm or more. And further disclosed are high resistivity silicon wafers having an electric resistivity of 100 ?·cm or more, which are cut from crystal region where no COP (Crystal Originated Particle) exist, and in which neither COP (Crystal Originated Particle) nor oxygen precipitate exist at the area from wafer surface to the depth of 5 ?m or more owing to high temperature treatment. It is preferable that, in said high resistivity wafers, carbon concentration in wafers is 1×1016 atoms/cm3 or more (ASTM F123-1981), and/or nitrogen concentration is 1×1013 atoms/cm3 or more.

Abstract: In one embodiment, a method for cooling a reaction effluent gas includes feeding a sufficient amount of a suitable silicon source cooling gas into a stream of the reaction effluent gas, wherein the reaction effluent gas is produced by a thermal decomposition of at least one silicon source gas in a reactor, and wherein sufficient amount of the suitable silicon source cooling gas is defined based a concentration of the at least one chemical species in the reaction effluent gas; cooling the reaction effluent gas to a sufficient temperature so that: the cooled reaction effluent gas is capable of being handled by a material that is not suitable for handling the reaction effluent gas.

Abstract: The present invention provides a coating liquid for forming an insulation film, which has a small shrinkage in the calcination step in water vapor and is not likely to cause cracking of a resulting silica coating film or detachment thereof from a semiconductor substrate; an insulation film using the same; and a method of producing a compound used in the same. The coating liquid of comprises an inorganic polysilazane whose ratio of a peak area at 4.5 to 5.3 ppm attributed to SiH1 group and SiH2 group with respect to a peak area at 4.3 to 4.5 ppm attributed to SiH3 group in 1H-NMR spectrum is 4.2 to 50; and an organic solvent. The insulation film is obtained using the coating liquid.

Abstract: A reactor, a plant, and a continuous, industrial process carried out therein for preparing high-purity silicon tetrachloride or high-purity germanium tetrachloride by treating the silicon tetrachloride or germanium tetrachloride to be purified, which is contaminated by at least one hydrogen-containing compound, by a cold plasma and isolating purified high-purity silicon tetrachloride or germanium tetrachloride from the resulting treated phase by fractional distillation. The treatment is carried out in a plasma reactor in which longitudinal axes of a dielectric, of a high-voltage electrode, and of a grounded, metallic heat exchanger are oriented parallel to one another and at the same time parallel to the force vector of gravity.

Abstract: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.

Abstract: A method of forming a ceramic article including providing a ceramic body comprising silicon carbide, and treating the ceramic body in an atmosphere comprising an oxidizing material to remove a portion of the ceramic body through a chemical reaction between a portion of the ceramic body and the oxidizing material.

Abstract: Heterocyclosilane compounds and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous silicon film (that may also be hydrogenated to some extent) or doped polycrystalline semiconductor film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a “doped liquid silicon” composition.

Abstract: The invention provides a process for thermal cleavage of the high-boiling residues of the direct Müller-Rochow synthesis to give silanes with hydrogen chloride in a fluidized bed of silicon dioxide-containing, aluminum-free particles.

Abstract: A multilayered material is provided which includes a substrate and a silicon-containing film formed on the substrate, wherein the silicon-containing film has a nitrogen-rich area including silicon atoms and nitrogen atoms, or silicon atoms, nitrogen atoms, and an oxygen atoms and the nitrogen-rich area is formed by irradiating a polysilazane film formed on the substrate with an energy beam in an atmosphere not substantially including oxygen or water vapor and denaturing at least a part of the polysilazane film. A method of producing the multilayered material is also provided.