Abstract: Methods of the present invention can be used to synthesize nanowires with controllable compositions and/or with multiple elements. The methods can include coating solid powder granules, which comprise a first element, with a catalyst. The catalyst and the first element should form when heated a liquid, mixed phase having a eutectic or peritectic point. The granules, which have been coated with the catalyst, can then be heated to a temperature greater than or equal to the eutectic or peritectic point. During heating, a vapor source comprising the second element is introduced. The vapor source chemically interacts with the liquid, mixed phase to consume the first element and to induce condensation of a product that comprises the first and second elements in the form of a nanowire.

Abstract: A process for producing an aqueous silica-based sol is disclosed wherein a cationic ion exchange resin having part of its ion exchange capacity in hydrogen form is contacted with an aqueous alkali metal silicate to form a slurry having a pH from 5.0 to 11.5 and/or having particle aggregation or microgel formation corresponding to a S value up to 45%; adjusting the pH using a material comprising an aluminum compound; and separating the resin from the slurry. Silica-based sols having an S value from 15 to 25%, mole ratio Si:Al from 20:1 to 50:1, mole ratio Si:X, where X=alkali metal, from 5:1 to 17:1, SiO2 content of at least 5% by weight and containing silica-based particles having a specific surface area of at least 300 m2/g, as well as the use of such silica-based sols in producing paper are disclosed.

Abstract: The present invention is generally directed toward a method to create an enhanced carbon nanotube spaceframe network. The spaceframe network contains an assembly of regiofunctional carbon nanotube beams by crown-to-crown connection into nodes to form a networked lattice configuration. The inventive method includes selecting crown materials and applying appropriate processing conditions which result in the production of secondary forms. The crown materials include polymers with unsaturated sites, polymeric crowns, silicon boron, poly(hydridocarbyne). The processing conditions include radical initiation, vulcanization, pyrolysis, hydroboration at unsaturation sites, using silicon bearing polymers in the Rf-CNB crowns, dissolution of silicon containing organics into the nodes and poly(hydridocarbyne). The secondary forms include cross-linked polymers, carbonized, graphitized, ceramic, diamond-like along with tailored functionalization.

Abstract: The present invention provides a method for producing a nanoporous carbide-derived carbon composition with a tunable pore structure and a narrow pore size. Also provided are compositions prepared by the method.

Abstract: The present invention provides silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the compounds. The compounds are defined by formula: SiHnI (GeHn2)y, wherein y is 2, 3, or 4 wherein n1 is 0 1, 2 or 3 to satisfy valency and wherein n2 is independently 0, 1, 2 or 3 for each Ge atom in the compound, to satisfy valency.

Abstract: A coating includes a titanium aluminum silicon carbon-nitride layer including a first surface and an opposite second surface. The atomic carbon content and/or the atomic nitrogen content in the titanium aluminum silicon carbon-nitride layer gradually increases from the first surface to the second surface.

Abstract: A process for producing silicon comprises the steps of a reduction step [1] of depositing silicon by reacting chlorosilanes and hydrogen in a reactor under heat and discharging an exhaust gas that contains hydrogen, oligomers of silanes, and a silicon powder; a carring step [2] of carrying the exhaust gas that has been exhausted in the step [1] while keeping a temperature of the exhaust gas at not less than 105° C.; a removal step [3] of supplying the exhaust gas that has been carried in the step [2] to a filter at a temperature of not less than 105° C. and discharging the exhaust gas from the filter at a temperature of not less than 105° C. to remove the silicon powder from the exhaust gas and give a mixed gas that contains the hydrogen and the oligomers of silanes; and a separation step [4] of cooling the mixed gas that has been obtained in the step [3] to separate the hydrogen as a gas phase from the mixed gas.

Abstract: A method for making iron silicide nano-wires comprises the following steps. Firstly, providing an iron object and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the iron object into the reacting room. Thirdly, introducing a silicon-containing gas into the reacting room. Finally, heating the reacting room to a temperature of 600˜1200° C.

Abstract: A phosphor comprising a CaAlSiN3 group crystal as a host crystal and emitting highly-intense light, a manufacturing method and an application of the same are provided. In the present invention, the phosphor comprises at least lithium (Li), calcium (Ca), silicon (Si), aluminum (Al), oxygen (O), nitrogen (N), and cerium (Ce) elements, and has a CaAlSiN3 crystal or a crystal having the same crystal structure as CaAlSiN3. And a phosphor emitting yellow, orange, or red luminescence can be produced by controlling a composition thereof.

Abstract: A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-xSiHx, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.

Abstract: The present invention relates to a mixture of an oligomeric, blocked aminosilane (azomethine structure) and a monomeric, blocked, primary amine (azomethine structure). This mixture is suitable in particular as a curing agent, crosslinker and adhesion promoter.

Abstract: A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A8TMy11TMy22 . . . TMynnMzX46-y1-y2- . . . -yn-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM1, TM2, and TMn are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y1, y2, yn and Z are actual compositions of TM1, TM2, TMn, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8·qA?|?q1|y1?|?q2|y2? . . . ?|?qn|yn, wherein qA is a charge state of A, and wherein ?q1, ?q2, ?qn are, respectively, the nominal charge state of the first, second, and n-th TM.

Abstract: The invention relates to a thin-film solar cell (10) comprising a substrate (1) of metal or glass, a dielectric barrier layer (2) based on a polysilazane and a photovoltaic layer structure (4) of the copper-indium sulphide (CIS) type or the copper-indium selenide (CIGSe) type.

Abstract: A sintered silicon oxide for film vapor deposition having a density of 1.0 to 2.0 g/cm3, three-point flexural strength of at least 50 g/mm2, and a BET specific surface area of 0.1 to 20 m2/g is provided. When this sintered silicon oxide is used for evaporation source of a film, pin holes and other defects of the film caused by the problematic splash phenomenon can be reliably prevented and stable production of a reliable package material having excellent gas barrier property is been enabled. This invention also provides a method for producing such sintered silicon oxide, and this method can be used in a large scale production without requiring any special technology, and therefore, this method is capable of supplying the market with the sintered silicon oxide at reduced cost.

Abstract: A method is provided for treating silica sand scrubs (SSS) generated and accumulated as waste in the chloride manufacturing process of titanium dioxide pigment. A hydrothermal process is used to produce sodium silicate solutions of modulus 3.0 to 3.8, and precipitated silicas. In some embodiments, the process uses two specific principal reaction stages. A sodium silicate solution having a low SiO2:Na2O molar ratio, in the range from 2.0 to 2.8, is first produced by reaction of the SSS, as a cost-effective SiO2 source, with aqueous caustic soda. The conversion of this intermediate sodium silicate solution of low modulus to a high SiO2:Na2O molar ratio is made possible by using a SiO2 source that is prepared as precipitated amorphous silica from the intermediate sodium silicate solution produced above.

Abstract: Fibrous composite comprising a plurality of carbon nanotubes; and a silica-containing moiety having one of the structures: (SiO)3Si—(CH2)n—NR1R2) or (SiO)3Si—(CH2)n—NCO; where n is from 1 to 6, and R1 and R2 are each independently H, CH3, or C2H5.

Abstract: The present invention is drawn to a method for removing colloidal titanium dioxide and titanium oxychloride from by-product hydrochloric acid. The method includes adding phosphate ion source and quaternary amine to the by-product acid to cause the titanium dioxide and the titanium oxychloride to form a precipitate. The precipitate can then be separated from the acid, thus producing a decontaminated hydrochloric acid product with reduced levels of titanium.

Abstract: The present invention provides novel compounds of the formula Gei-x-ySixSny, wherein 0.01<y<0.11, and 0.26<x<0.35, and semiconductor structures comprising such compounds. The present invention also provides novel semiconductor structures comprising silicon substrates, an SiGe buffer layer, and a Group III-V or II-VI active layer. The present invention also provides novel semiconductor structures comprising silicon substrates, an SiGe buffer layer, an SiGeSn template layer, and an SiGe, Ge, Group III-V, or Group II-VI active layer.

Abstract: A clathrate compound of formula (I): M8AxBy-x (I) wherein: M is an alkaline earth metal, a rare earth metal, an alkali metal, Cd, or a combination thereof, A is Ga, Al, In, Zn or a combination thereof; B is Ge, Si, Sn, Ni or a combination thereof; and 12?x?16, 40?y?43, x and y each is or is not an integer. Embodiments of the invention also include method of making and using the clathrate compound.

Abstract: A solution is to be created, with a method and a device for generating hydrogen, in which silicon and/or an alloy that contains silicon is reacted in a reaction vessel (1), with an alkaline solution as a catalyst, so that the process, after starting, runs continuously and catalytically in the presence of silicon dioxide as a nucleating agent, without further addition of lye and without using higher pressures and temperatures (hydrothermal conditions). This is achieved in that the alkaline solution is used in a strongly sub-stoichiometric amount with reference to the entire reaction, whereby the silicon dioxide that is formed is precipitated onto crystallization nuclei.

Abstract: A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-XSiHX, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HXSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HXSi(OSO2CF3)4-x or HXSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.

Abstract: Submicron powders of metal silicon nitrides and metal silicon oxynitrides are synthesized using nanoscale particles of one or more precursor materials using a solid state reaction. For example, nanoscale powders of silicon nitride are useful precursor powders for the synthesis of metal silicon nitride and metal silicon oxynitride submicron powders. Due to the use of the nanoscale precursor materials for the synthesis of the submicron phosphor powders, the product phosphors can have very high internal quantum efficiencies. The phosphor powders can comprise a suitable dopant activator, such as a rare earth metal element dopant.

Abstract: The present invention relates to a process for the preparation of a silicate comprising at least silicon and oxygen, comprising (1) mixing of silicon dioxide and/or of a silicon dioxide precursor with an aqueous solution comprising at least one tetraalkylammonium compound comprising R1R2R3R4N+ and at least one base, wherein R1 and R2 are methyl and both R3 and R4 are n-propyl; (2) heating of the colloidal solution obtained according to (1) to a temperature in the range of from greater than the boiling point of the colloidal solution under the chosen pressure to 180° C. at atmospheric pressure to give a suspension comprising at least one silicate, wherein the silicate comprising at least silicon and oxygen is added as a crystallization auxiliary in (1).

Abstract: A method for preparation of high purity silicon suitable for photovoltaic cells using reduction of silica, which is pre-purified in an aqueous solution, in presence of a reducing agent, preferably carbonaceous agent, where the pre-purified silica has a low amount of boron suitable for photovoltaic cells is described.

Abstract: A method of depositing a material on a substrate comprises placing a substrate into a process space in fluidic communication with a Gaede pump stage (GPS). A precursor gas is then injected into the process space while injecting a draw gas at a draw gas flow rate into the GPS such that the injected precursor gas achieves a precursor pressure and a precursor gas flow rate in the process space. Subsequently, substantially all of the precursor gas remaining in the process space is swept from the process space by injecting a sweep gas into the process space such that the injected sweep gas achieves a sweep pressure and sweep gas flow rate in the process space. The precursor pressure is higher than the sweep pressure, and the precursor gas flow rate is lower than the sweep gas flow rate.

Abstract: Provided are a method of preparing a zinc silicate-based phosphor and a zinc silicate-based phosphor prepared using the method. The method includes: (a) preparing a solution including a Zn precursor compound and a Si precursor compound; (b) adding a coprecipitant to the solution to form precipitation; and (c) heat treating the solution in which the precipitation is formed to synthesize zinc silicate (Zn2SiO4), wherein a solvent of the solution including the Zn precursor compound and the Si precursor compound includes at least one selected from the group consisting of ethanol, methanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, 1-pentanol, 2-pentanol, 3-pentanol, 1-hexanol, and 1-heptanol, and hydrazine is used as the coprecipitant.

Abstract: A method for processing an amorphous carbon film which has been formed on a substrate and wet-cleaned after being dry-etched includes preparing the substrate having the wet-cleaned amorphous carbon film and modifying a surface of the amorphous carbon film, before forming an upper layer on the wet-cleaned amorphous carbon film.

Abstract: The present invention provides for evaporation induced self-assembly (EISA) within microdroplets produced by a vibrating orifice aerosol generator (VOAG) for the production of monodisperse mesoporous silica particles. The process of the present invention exploits the concentration of evaporating droplets to induce the organization of various amphiphilic molecules, effectively partitioning a silica precursor to the hydrophilic regions of the structure. Promotion of silica condensation, followed by removal of the surfactant, provides ordered spherical mesoporous particles.

Abstract: A process of producing a ceramic powder including providing a plurality of precursor materials in solution, wherein each of the plurality of precursor materials in solution further comprises at least one constituent ionic species of a ceramic powder, combining the plurality of precursor materials in solution with an onium dicarboxylate precipitant solution to cause co-precipitation of the ceramic powder precursor in a combined solution; and separating the ceramic powder precursor from the combined solution. The process may further include calcining the ceramic powder precursor.

Abstract: The invention concerns a silicon designed in particular for making solar cells containing a total of impurities ranging between 100 and 400 ppm, a boron content ranging between 0.5 and 3 ppm, a phosphorus/boron content ratio ranging between 1 and 3, and a content of metal elements ranging between 30 and 300 ppm. The invention also concerns a method for making such a silicon from an oxygen- or chorine-refined metallurgical silicon containing at least 500 ppm of metal elements, and comprising: refusion under neutral atmosphere of the refined silicon, in an electric furnace equipped with a hot crucible; transferring the molten silicon, to provide a plasma refining, in an electric furnace equipped with a hot crucible; plasma refining with as plasma-forming gas a mixture of argon and of at least a gas belonging the group consisting of chlorine, fluorine, HCI and HF; casting under controlled atmosphere in an ingot mold wherein is produced segregated solidification.

Abstract: A production method, comprising a step of synthesizing silicon particle-containing silicon oxide particles by performing a gas phase reaction of monosilane gas and oxidizing gas for oxidizing the monosilane gas and a step of removing the silicon oxide with hydrofluoric acid after holding the silicon oxide particle powder in an inert atmosphere at 800-1400°, provides high-purity silicon nanoparticles which are highly practical as material powder for high-performance light-emitting elements and electronic parts in an industrial scale.

Abstract: There is described an apparatus, a tubular laminar flow, plug flow reactor, for making silylamines and particularly trisilylamine (TSA) in high yields from ammonia gas and a monohalosilane gas. The apparatus can be a tubular flow reactor comprising a first portion of the reactor defining a gas entry zone, a second portion of the reactor defining a reaction zone and a third portion of the reactor defining a separation zone, the reaction zone providing a reactant contacting region. Trisilylamine can be recovered in the separation zone in a cold trap collection vessel.

Abstract: The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.

Abstract: The invention provides adducts comprising a carbon nanotube with covalently attached silane moieties, and methods of making such adducts. Examples of silane moieties include trimethoxysilane; hexaphenyldisilane; silylphosphine; 1,1,1,3,5,5,5-heptamethyltrisiloxane; polydimethylsiloxane, poly(N-bromobenzene-1,3-disulfonamide); N,N,N?,N?-tetrabromobenzene-1,3-disulfonamide; hexamethyldisilazane (HMDS); chlorotrimethylsilane (TMCS); trichloromethylsilane (TCMS); an alkyl(alkylamino)silane; a tri(alkoxy)silane; tert-butyldimethylsilane; monochloroaminosilane; dichloroaminosilane; trichloroaminosilane; and dimethylaminosilane.

Abstract: A facile synthesis route for preparing SBA-15 silica of platelet shape and very short mesochannels was developed by introducing a small amount of Zr(IV) ions in the first synthesis solution. The synthesis route can be easily extended to prepare SBA-15 materials with various organic functional groups in one pot.

Abstract: The invention relates to powder comprising at least one element M, at least one element A and at least one element X, in the respective proportions (n+1±?1), 1±?2 and n±?3, in which: A is chosen from Cd, Al, Ga, In, Tl, Si, Ge, Sn, Pb, P, As and S; M is a transition metal; X is chosen from B, C and N; n is an integer equal to 1, 2 or 3; and ?1, ?2 and ?3 independently represent a number ranging from 0 to 0.2, said powder having a mean particle size of less than 500 nm.

Abstract: A method according to the invention comprises: starting plasma discharge for forming the gas barrier layer in a film deposition chamber; and producing the gas barrier layer by using a plasma after a first predetermined period of time has elapsed from a start of the plasma discharge.

Abstract: Methods of converting olivine to lizardite without formation of chrysotile or brucite are disclosed. The methods comprise heating a mixture of olivine, silica, water, and a caustic agent. The addition of silica allows for complete conversion of the olivine to lizardite through a more thermodynamically favorable reaction. The olivine and silica are preferably of small particle size to increase reactivity.

Abstract: A process for providing silicon compounds from a silicon dioxide compound, preferably sand, with the following steps: a) introducing the silicon dioxide compound into a combustion zone; b) heating the combustion zone together with the silicon dioxide compound; c) conversion of silicon dioxide from the silicon dioxide compound into silicon (Si2), wherein a reducing agent is supplied in order to remove the oxygen from the silicon dioxide; d) injecting a gaseous reaction partner in order to produce the silicon compound from the silicon (Si2).

Abstract: An inorganic polymer which comprises one or more organic functional groups and which has the following empirical formula: Rm[M2O]x[Al2O3]y[SiO2]zXqPH2O, in which: R represents an organic functional group; M is an alkali metal; X is selected from chlorine and fluorine; m is >0; q is ?0; x is from 1 to 1.6; y is from 1.0; x/y is from 1.0 to 1.6; z is from 3 to 65; z/y is ?1.0; and P is from 3 to 5.

Abstract: A method is disclosed whereby a functional nanomaterial such as a monolayer carbon nanotube, a monolayer boron nitride nanotube, a monolayer silicon carbide nanotube, a multilayer carbon nanotube with the number of layers controlled, a multilayer boron nitride nanotube with the number of layers controlled, a multilayer silicon carbide nanotube with the number of layers controlled, a metal containing fullerene, and a metal containing fullerene with the number of layers controlled is produced at a high yield. According to the method, when a multilayer carbon nanotube (3) is formed by a chemical vapor deposition or a liquid phase growth process, an endothermic reaction aid (H2S) is introduced in addition to a primary reactant (CH4, H2) in the process to form a monolayer carbon nanotube (4).

Abstract: Disclosed are methods for making ultrafine particles, apparatus for making ultrafine particles, and coating compositions comprising ultrafine particles made by such methods and/or apparatus.

Abstract: Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain at least about 3×1020 atoms cm?3 of an electrically active dopant. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.

Abstract: A process for forming metallic nitride film by atomic layer deposition (ALD), which comprises steps for feeding into a reaction space vapor phase alternated pulses of metal source material and silicon source material in a plurality of cycles, and feeding into the reaction space vapor phase pulses of nitrogen source material. wherein a nitrogen source pulse is fed intermittently in selected cycles such that a ratio of nitrogen source pulses to silicon source pulses is less than 1:1 and a ratio of nitrogen source pulses to metal source pulses is less than 1:1, the ratio selected to produce the thin film with a resistivity between 1,000 ??cm and 15,000 ??cm.

Abstract: An anode material capable of improving cycle characteristics, and a battery using the anode material are provided. A disk-shaped cathode contained in a package can and a disk-shaped anode contained in a package cup are laminated with a separator in between. The anode includes an alloy or a compound including iron in addition to at least either tin or silicon. The ratio of iron in the alloy or the compound is preferably about 15% by mass or less. Moreover, it is preferable that the alloy or the compound further includes chromium in an amount of less than 1500 ppm by mass.

Abstract: There is obtained a silicon wafer which has a large diameter, where no slip generated therein in a wide range of a density of oxygen precipitates even though a heat treatment such as SLA or FLA is applied thereto, and which has high strength. First, by inputting as input parameters combinations of a plurality of types of oxygen concentrations and thermal histories set for manufacture of a silicon wafer, a Fokker-Planck equation is solved to calculate each of a diagonal length L and a density D of oxygen precipitates in the wafer after a heat treatment step to form the oxygen precipitates (11) and immediately before a heat treatment step of a device manufacturing process is calculated.

Abstract: The synthesis of precipitated silica having improved chemical and physical properties of use as a reinforcing filler in polymeric matrices is described. Improvements in the properties result from the synthesis of the silica al a reduced ionic strength. In particular, the use of silicia acid during synthesis, provides a solution of reduced ionic strength, which favors the formation of improved colloidal structure via increased aggregation and reduced agglomeration. In addition, the surface of the silica precipitate formed may be modified by the addition of surface modifying agents, during synthesis to further enhance the desired reinforcing properties of the precipitated silica. The invention also embodies polymeric compositions of improved tensile and elongation strengths, with the compositions including precipitated silica, synthesized at reduced ionic strengths and having modified surfaces, in combination with a polymeric compound.

Abstract: Non-spherical siliceous particles having a plurality of porous branches are disclosed and claimed. The porous branches are randomly oriented and elongated, ring-like, and/or aggregated. An additive introduced during synthesis of the particles modifies pore volume and morphology. The tunability of the pore volume includes an inner diameter ranging from about 2 ? to about 50,000 ?. Synthesizing the particles includes mixing under constant or intermittent stirring in a reaction vessel an aqueous silicic acid solution with an acidic heel solution to form a mixture. The stirring may optionally be performed at a variable speed. An additive is introduced into the mixture at a controlled rate, wherein the additive imposes a pH change from a lower pH to a higher pH to the mixture to induce siliceous particle precipitation.

Abstract: The present invention relates to a for controlled synthesis of hydrogen-rich cyclosiloxanes of the (H2SiO)n type. where n is an integer equal to or greater than 3, by reacting: a.) a halosilane of the H2SiX2 type where X=halogen with b.) a lithium salt, copper(II) salt or a salt of a metal from main group 2 or transition group 2 of the periodic table of the elements, or a mixture of these salts. The ring size is advantageously adjustable to n=3, 4, 5, 6 (especially n=4 to 6), such that larger rings are not formed. In a particularly advantageous embodiment of the process, for the selective preparation of cyclohexasiloxane (H2SiO)6, after the reaction, the solvent is at least partly removed and then solvent is added again.

Abstract: Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides a predominantly p-type semiconductor for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of aluminum or/and gallium. The process further melts the silicon feedstock together with a predetermined amount of aluminum or/and gallium to form a molten silicon solution from which to perform directional solidification and, by virtue of adding aluminum or/and gallium, maintains the homogeneity the resistivity of the silicon ingot throughout the silicon ingot. In the case of feedstock silicon leading to low resistivity in respective ingots, typically below 0.4 ?cm, a balanced amount of phosphorus can be optionally added to aluminum or/and gallium.