Abstract: The present embodiment provides for methods and systems for use in processing objects such as wafers, including polishing and/or grinding wafers. Some embodiments provide systems that include a front-end module and a processing module. The front end module couples with a storage device that stores objects for processing. The front-end module can comprise a single robot, a transfer station, and a plurality of end effectors. The processing module is coupled with the front-end module such that the single robot delivers objects from the storage device to the processing module. The processing module comprising a rotating table, and a spindle with a carrier configured to retrieve the delivered object and process the object on the rotating table.

Abstract: A precision machining apparatus and a precision machining method capable of carrying out grinding with accuracy by performing switching control, for example, on a device for rotating a grinding wheel according to grinding stages through the amount of movement and constant pressure changed stepwise. To a second pedestal 3 supporting a rotary device 6b for rotating a grinding wheel b, an actuator 5 and a feed screw mechanism 4 constituted by at least a feed screw 41 and a nut 42 are attached. In a rough grinding stage, the movement of the rotary device 6b and the second pedestal 3 is adjusted through a predetermined amount of movement of the nut 42. In a super-precision grinding stage, the movement of the rotary device 6b and the second pedestal 3 is adjusted by pressure control using stepwise a plurality of pneumatic actuators 5a, 5b differing in pressure performance. An attitude control device 7 is interposed between a first pedestal 2 and a rotary device 6a for rotating an object a to be ground.

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

Abstract: An ultrasonic CMP polishing pad analyzer is disclosed. The analyzer provides a manufacturer or other user an ability to inspect a CMP polishing pad without removing the pad from the CMP machine by creating and displaying a topographical image of an in-service polishing pad. The analyzer includes an ultrasonic transducer and an analyzer body mounted to the CMP machine such that the ultrasonic transducer is positioned to receive reflected ultrasonic signals from a surface of the polishing pad.

Abstract: The present invention relates to an apparatus and method for polishing semiconductor substrates with improved throughput and reduced foot print. One embodiment of the present invention provides an apparatus for polishing a substrate. The apparatus comprises a base, four polishing stations disposed on the base, two load cups disposed on the base, a first wash station disposed on the base adjacent to the first of the four polishing station, and a carousel rotatable about a carousel axis and supported by the base, wherein the carousel comprises six substrate heads alignable to any of the four polishing stations, the two load cups and the first wash station.

Abstract: A substrate polishing apparatus for polishing a polishing surface of a substrate has a film thickness monitoring device for monitoring a state of a film thickness of a thin film on the polishing surface of the substrate during polishing. The apparatus includes a table, a polishing member fixed on a surface of the table, a substrate support member for pressing the substrate onto the polishing member, an optical system composed of an optical fiber for irradiating the polishing surface of the substrate with a light of irradiation and an optical fiber for receiving a reflected light reflected on the polishing surface of the substrate, an analysis-processing system for processing an analysis of the reflected light received with the optical system, and the film-thickness monitoring device. The table is provided with a liquid-feeding opening for feeding a translucent liquid into a through-hole disposed in the polishing member.

Abstract: A control system for controlling processing of workpieces such as jewelry has gantry and gimbal units having x, y, z translational and x, y, z rotational degrees of freedom, the units carrying a gripper for holding a piece of jewelry. Drive motors are associated with each translational and rotational degree of freedom and an actuator operates the gripper. A controller is linked to the gantry and gimbal unit motors, the gripper unit actuator, and actuators associated with a series of work stations for carrying out processing operations such as lapping and grinding. The controller controls movement of the gripper unit from a start position to pick up a workpiece and move it along a programmed path between the processing stations, and controls operation of actuators at each processing station to process workpieces according to stored program instructions. A user input device provides optional operator control of the movement and processing for system training purposes.

Abstract: A method of forming a device, such as an electrode array for a cochlear implant. The method comprises a step of forming a predetermined pattern of relatively electrically conductive regions and relatively electrically resistive regions in a sheet of biocompatible electrically conductive material, such as platinum foil. The method can comprise a step of working on the sheet to remove predetermined portions therefrom to form the one or more discrete relatively conducting regions. The step of working on the sheet can comprise embossing the sheet, cutting or slicing the sheet, or using electrical discharge machining (EDM) to remove unwanted portions of the sheet, the EDM equipment having a cutting tool comprising an electrode.

Abstract: The polishing apparatus is capable of transferring a work piece to a top ring without moving the work piece from the center and capable of precisely polishing the work piece. The polishing apparatus has a transfer unit for transferring the work piece to the top ring. The transfer unit comprises: a guide member having a receiving section, which centers the work piece; a mounting table vertically moving with respect to the guide member, the mounting table having a mounting section, which receives the centered work piece; and a supporting mechanism supporting the mounting table and allowing the mounting table to move downward. The mounting table is relatively moved close to the top ring and presses the work piece onto the top ring so as to transfer the work piece to the top ring.

Abstract: Monitoring the process of planarizing a workpiece, e.g., conditioning a CMP pad, can present some difficulties. Aspects of this invention provide methods and systems for monitoring and/or controlling such a planarization cycle. For example, a control system may monitor the proximity of a workpiece holder and an abrasion member by measuring the capacitance between a first sensor associated with the workpiece holder and a second sensor associated with the abrasion member. This exemplary control system may adjust a process parameter of the planarization cycle in response to a change in the measured capacitance. This can be useful in endpointing the planarization cycle, for example. In certain applications, the control system may define a pad profile based on multiple capacitance measurements and use the pad profile to achieve better planarity of the planarized surface.

Abstract: A polishing pad, platen, method of monitoring, method of manufacturing, and method of detecting using a pseudo window area, where the pseudo window area has a thickness less than a thickness of a polishing layer and a thickness greater than zero.

Abstract: The grinding machine (10) according to the invention serves in particular for the machining or production of tools. It comprises a machine bed 11 and a workpiece spindle (14) arranged thereon, which receives the workpiece (13) to be machined, as well as a grinding station (19) arranged next to the workpiece, the station having a grinding spindle for the reception of a grinding tool (20), and is provided with a workpiece guide system (23) arranged at the machine bed for the support of the workpiece at the grinding location (21).

Abstract: Methods system and apparatus, including computer program products, for monitoring polishing a substrate. A polishing pad mounted on a platen is rotated at a first rotation rate, and a carrier head is rotated at a second rotation rate that is different from the first rotation rate. The carrier head carries a substrate and presses the substrate against the polishing pad. A sequence of data traces is acquired using a sensor mounted in the platen, wherein each data trace results from a separate scan with the sensor along a path across the substrate, and wherein the first and second rotation rates are such that a plurality of paths corresponding to a predetermined number of consecutive scans are substantially evenly radially distributed across the substrate.

Abstract: An apparatus and method for polishing objects, such as semiconductor wafers, utilizes one or more polishing surfaces, multiple wafer carriers and at least one load-and-unload cup. The load-and-unload cup may be configured to move to and from the wafer carriers in a pivoting manner. The load-and-unload cup may be configured to move to and from the wafer carriers in a linear reciprocating manner. The wafer carriers may be configured to move to and from the load-and-unload cup in a pivoting manner. The wafer carriers may be configured to move to and from the load-and-unload cup in a linear reciprocating manner.

Abstract: A method and apparatus for measuring an abrasion amount and a friction force of a polishing pad using a thickness change of a slurry film in a chemical mechanical polishing operation are provided. In a preferred method, for example, a first displacement of a semiconductor wafer with respect to a polishing pad is measured during an initial stage and a first reference range of the thickness change of the slurry film is preferably set to determine a replacement time corresponding to the abrasion amount of the polishing pad. A conditioning condition of the polishing pad conditioning can also be set, and a second displacement of the semiconductor wafer with respect to the polishing pad can be measured when the surface of the semiconductor wafer is polished by the polishing pad. The first displacement is then preferably compared with the second displacement to calculate the thickness change of the slurry film formed between the polishing pad and the semiconductor wafer.

Abstract: A CMP conditioning apparatus enhanced end effector arm for improving the reliability of the apparatus and the quality of the conditioning and polishing operations includes a conditioner head with features that provide for simplified alignment/attachment of a conditioning disk to the arm, while also providing a “quick release” mechanism for maintenance operations. The enhanced arm also includes an improved actuator that provides for a static friction (“stiction”)-free movement of the arm and better control of the downforce applied by the conditioning disk to the polishing pad. A dual-drive pulley system is used within the enhanced end effector arm to minimize the tilting of the drive belts within the effector arm as the arm pivots to follow the contour of an “aging” polishing pad.

Abstract: A substrate polishing apparatus is used to polish a surface of a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table and a polishing pad mounted on the polishing table for polishing a semiconductor substrate. The polishing pad has a through hole formed therein. The substrate polishing apparatus also has a light emission and reception device for emitting measurement light through the through hole formed in the polishing pad to the semiconductor substrate and receiving reflected light from the semiconductor substrate so as to measure a film on the semiconductor substrate. The light emission and reception device is disposed in the polishing table. The substrate polishing apparatus includes a supply passage for supplying a fluid to a path of the measurement light. The supply passage has an outlet portion detachably mounted on the polishing table.

Abstract: In an apparatus for machining workpieces, in particular workpieces provided with cutting teeth, such as bandsaw blades or circular-saw blades for example, comprising a base (12), a machining device (18) displaceable relative to the base (12) and having at least one machining tool (20) rotationally drivable about a drive axis, and a clamping device (14) for securing the workpiece to be machined, the machining device (18) being designed with a multiaxis arrangement (24), by means of which the machining tool (20) can be positioned in different machining positions relative to the workpiece to be machined, it is provided that the multiaxis arrangement (24) is received within a support frame (26) open on at least one side and coupled to the base (12).

Abstract: Monitoring the process of planarizing a workpiece, e.g., conditioning a CMP pad, can present some difficulties. Aspects of this invention provide methods and systems for monitoring and/or controlling such a planarization cycle. For example, a control system may monitor the proximity of a workpiece holder and an abrasion member by measuring the capacitance between a first sensor associated with the workpiece holder and a second sensor associated with the abrasion member. This exemplary control system may adjust a process parameter of the planarization cycle in response to a change in the measured capacitance. This can be useful in endpointing the planarization cycle, for example. In certain applications, the control system may define a pad profile based on multiple capacitance measurements and use the pad profile to achieve better planarity of the planarized surface.

Abstract: Chemical-mechanical planarization (CMP) apparatus and methods for detecting polishing pad properties using ultrasonic imaging is presented. An ultrasonic probe assembly transmits ultrasonic signals onto the surface of a polishing pad during a CMP process. Reflected ultrasonic signals are collected and analyzed to monitor polishing pad properties in real-time. This allows CMP process adjustments to be made during the CMP process.

Abstract: A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed.

Abstract: A method and apparatus for chemical mechanical polishing includes a platen supports a polishing article, a robot located proximate the platen, a carrier head having a retaining ring, and a carrier heads support mechanism. The robot is configured to position a substrate on the polishing article, and the carrier heads support mechanism is configured to move the carrier head into a position that the retaining ring surrounds the substrate.

Abstract: Methods are provided for calibrating a tool using an eddy current probe and calibration wafers that each have a measurable predetermined property and a measurement of the measurable predetermined property of a first calibration wafer is different than a measurement of the measurable predetermined property of a second calibration wafer. The methods include determining a first set of impedance measurements of the calibration wafers while each is disposed in the tool and the tool has a tool parameter that is at a first condition, collecting a second set of impedance measurements of the calibration wafers while each is disposed in the tool and the tool parameter is at a second condition, establishing a reference point, based upon a first and a second data point from the first set of impedance measurements and a first and a second data point from the second set of impedance measurements.

Abstract: An eyeglass lens processing apparatus includes: a processing tool that processes a periphery of an eyeglass lens; a lens chucking shaft that holds the lens; a rotating unit that rotates the chucking shaft; a first moving unit that relatively moves the chucking shafts with respect to the processing tool; a lens holding arm that is provided with first and second lens holders for holding the lenses; a second moving unit that moves the lens holding arm; and a controller that controls the first and second moving units so that the first lens holder and the chucking shaft are moved to a first transfer position to transfer the lens therebetween, and, following the processing of the lens which is held by the first lens holder, the second lens holder and the chucking shaft are moved to a second transfer position to transfer the lens therebetween.

Abstract: A centerless grinding apparatus (10) includes an outer diameter surface grinding wheel (11) for grinding the outer diameter surface of a work (1) of a substantially cylindrical shape, a regulating wheel (12) for supporting the outer diameter surface of the work (1) in conjunction with the outer diameter surface grinding wheel (11) and an end surface grinding wheel (21) for grinding the end surface of the work (1). The end surface grinding wheel (21) grinds the end surface of the work (1) while the outer diameter surface grinding wheel (11) grinds the outer diameter surface of the work (1) in a state that the work (1) is disposed between the outer diameter surface grinding wheel (11) and the regulating wheel (12).

Abstract: A honing machine for super finishing workpieces, e.g. by honing using a tool spindle (7), can be rotatably driven and can receive a tool. A motor rotates the tool spindle, the tool spindle (12) being arranged on a carriage (12), which can be displaced on a machine frame (16), by means of a drive device, in the direction of the rotational axis of the tool spindle. The drive device consists of a flat primary part (13) and a secondary part (17) of an electric linear motor (18), the secondary part being linearly displaceable along the primary part. One (13) of the components primary part/secondary part (13, 17) of the linear motor (18) is disposed on the machine frame (16), and the other (17) on the carriage (12).

Abstract: A polishing apparatus can detect completion of initialization of a polishing pad quantitatively. The polishing apparatus has a polishing table having a polishing pad attached thereto and a substrate holder configured to bring a surface of a substrate into contact with the polishing pad and press the substrate against the polishing pad. The polishing apparatus also has a drive mechanism operable to drive at least one of the polishing table and the substrate holder so as to provide a relative movement between the polishing pad and the substrate. The polishing apparatus includes a current sensor operable to detect a drive current supplied to the driving mechanism. The polishing apparatus also includes a polishing pad condition detector operable to detect a condition of the polishing pad based on the drive current detected by the current sensor when the dummy substrate is polished by a relative movement between the polishing pad and a dummy substrate held by the substrate holder.

Abstract: A chemical mechanical polishing (CMP) apparatus and method for polishing semiconductor wafers utilizes multiple wafer carriers that are transferred to different positions about a polishing pad to polish at least one semiconductor wafer while another semiconductor wafer is being loaded onto or unloaded from one of the wafer carriers. The different positions include multiple polishing positions and one or more loading/unloading positions. In some embodiments, the CMP apparatus is configured such that a semiconductor wafer is polished at a loading/unloading position. The CMP apparatus may also be configured to continuously polish one or more semiconductor wafers while the wafer carriers are being transferred to different positions. Thus, the CMP apparatus can continuously process the semiconductor wafers without significant idle periods. Consequently, in these embodiments, the efficiency of the CMP apparatus is significantly increased.

Abstract: The tool unit for the ultrasonically assisted rotary machining of a workpiece comprises a converter (23) including at least one electroacoustic transducer (22) for generating and transmitting ultrasonic oscillations, a tool (30) that is coupled to the converter, and a holder (21) in which the converter including the transducer is arranged and which is insertable at least partially in the retainer (11) of a tool spindle (10) and connectable thereto by means of a detachable connection (27).

Abstract: A magnetic polishing method capable of easily and satisfactorily polishing the inner peripheral end face of a circular hole (1) at the center part of a disk substrate (2) even if the diameter of the circular hole is reduced. By this method, a large quantity of disk substrates with stable quality can be supplied, thermal asperity trouble and head crush can be prevented from occurring on a magnetic disk, and the density of the information recording surface of the magnetic disk can be increased.

Abstract: The invention relates to a method for calibrating a grinding machine for sharpening bar blades by grinding at least two flanks and a top surface (K) of the bar blades, involving the following steps: producing a calibrating blade by sharpening a bar blade according to predetermined dimensions; measuring the dimensions of the calibrating blade, and; calibrating the machine with the aid of at least the measurement result. In order to produce a calibrating blade, the bar blade is, in at least two steps, ground on the flanks and on the top surface (K) in a complete calibrating grinding. The inventive method is advantageous in that the calibrating blade is ground under the same conditions as a production blade so that process-related influences, in particular, displacements associated with the grinding forces, can also be taken into consideration.

Abstract: An apparatus for grinding a surface of a nonstraight elongated workpiece has a frame, drives on the frame for rotating the workpiece about a longitudinal workpiece axis, and a guide defining a pivot axis offset from the workpiece axis on the frame. A hanging arm has an inner end juxtaposable with the workpiece and an outer end pivoted at the pivot axis on the guide. A rotary grinding tool is provided on the arm inner end.

Abstract: A polishing apparatus (10) for polishing a device (12) with a polishing pad (48) includes a pad holder (50) and an actuator assembly (432). The pad holder (50) retains the polishing pad (48). The actuator assembly (432) includes a plurality of spaced apart actuators (438F) (438S) (438T) that are coupled to the pad holder (50). The actuators (438F) (438S) (438T) cooperate to direct forces on the pad holder (50) to alter the pressure of the polishing pad (48) on the device (12). At least one of the actuators (438F) (438S) (438T) includes a first actuator subassembly (440) and a second actuator subassembly (442) that interacts with the first actuator subassembly (440) to direct a force on the pad holder (50). The second actuator subassembly (442) is coupled to the pad holder (50) and the second actuator subassembly (442) rotates with the pad holder (50) relative to the first actuator subassembly (440).

Abstract: A grinding jig set comprising a combination of several jig units and a method for grinding a number of objects are provided. The method comprises a series of steps from arranging the objects to be ground on a grinding jig (a master plate) through removing the ground objects from the grinding jig after completion of grinding process, smoothly and precisely without damaging a number of the objects to be ground and without altering the arrangement pattern of the objects to be ground from the start through the end of the series of steps. The jig set for grinding comprises a set of jig units used for a series of processing from allocation of objects to be ground on a grinding jig through removing the ground objects from the grinding jig after the grinding operation.

Abstract: The present invention relates to an apparatus and method for polishing semiconductor substrates with improved throughput and reduced foot print. One embodiment of the present invention provides an apparatus for polishing a substrate. The apparatus comprises a base, four polishing stations disposed on the base, two load cups disposed on the base and a carousel supported by the base. The carousel comprises six substrate heads and is rotatable about a carousel axis. Each of the six substrate heads is configured to align with any one of the four polishing stations and the two load cups.

Abstract: A grinder designed to provide an automatic grinding operation for the manufacture of a semiconductor device wafer. The grinder includes a base, a rotatable index table mounted to the base, and a grinding wheel assembly including a grinding wheel for grinding a flat surface on the wafer. The index table includes a wafer holder for receiving and holding the wafer. A dressing station, including a dressing element, is positioned adjacent to the index table for dressing the grinding wheel. The dressing station is rotatable between a first position and a second position where the grinding wheel is dressed by the dressing element.

Abstract: A fiber optic polishing apparatus including a support system, a polishing sub-assembly coupled to the support system including a plurality of pads, and a fixture to hold a plurality of fiber optic connectors. The fixture is positioned adjacent to the plurality of pads so that an end surface of each of the plurality of fiber optic connectors is held in contact with a corresponding pad. A drive mechanism is coupled to the support system to move the fixture to polish the end surface of each of the plurality of fiber optic connectors. Each of the plurality of pads may travel independently in a vertical direction. The polishing sub-assembly may further include a web polishing film, a fluid injection module configured to direct water onto the film, and a rinsing module to rub against a face of each of the plurality of fiber optic connectors to remove debris.

Abstract: Monitoring the process of planarizing a workpiece, e.g., conditioning a CMP pad, can present some difficulties. Aspects of this invention provide methods and systems for monitoring and/or controlling such a planarization cycle. For example, a control system may monitor the proximity of a workpiece holder and an abrasion member by measuring the capacitance between a first sensor associated with the workpiece holder and a second sensor associated with the abrasion member. This exemplary control system may adjust a process parameter of the planarization cycle in response to a change in the measured capacitance. This can be useful in endpointing the planarization cycle, for example. In certain applications, the control system may define a pad profile based on multiple capacitance measurements and use the pad profile to achieve better planarity of the planarized surface.

Abstract: An attitude control device and a precision machining apparatus capable of accurately controlling the attitude of an object mounted on the attitude control device according to grinding stages. The attitude control device is constituted by a first flat-plate member 21 and a second flat-plate member 22 disposed in parallel with the first flat-plate while being spaced apart from the same by a distance L. A spherical member 3 is interposed between the first and second flat-plate members 21, 22 while fitting its portions in recesses 21a, 22a respectively formed in the first and second flat-plate members 21, 22. A first actuator 4a expandable in a Z-axis direction perpendicular to a plane defined by an X-axis and a Y-axis is interposed between the flat-plate members. Second actuators 4b, 4b expandable in a suitable direction in the plane defined by the X-axis and the Y-axis are connected to the second flat-plate member 22.

Abstract: A polishing apparatus has a polishing table (12) with a polishing surface (10) attached thereon, and a top ring (20) for pressing a workpiece (W) against the polishing surface (10). The top ring (20) has a housing (40) and a retainer ring (44) vertically movable in the housing (40) for holding an outer circumferential edge of the workpiece (W). The polishing apparatus includes a vertically moving mechanism operable to vertically move the top ring (20), a bracket (28) vertically movable together with the top ring (20), a stopper (32) adjustable in vertical position to prevent downward movement of the bracket (28), and a sensor (36) for detecting a distance between the stopper (32) and the bracket (28).

Abstract: A substrate holding apparatus can accurately control temperature of a substrate in a direct manner with a relatively simple arrangement. The substrate holding apparatus has a top ring configured to hold a substrate to be polished and press the substrate against a polishing surface, and an air bag attached to the top ring so as to be brought into contact with a rear face of the substrate. The substrate holding apparatus also has a regulator operable to regulate a temperature control fluid to be supplied into the air bag, and a flow regulating valve operable to regulate a flow rate of the temperature control fluid discharged from the air bag.

Abstract: A system and method for in situ measurement and maintenance of preferred pad smoothness in a CMP process is disclosed. The system includes a linear polisher having one or more sensors for detecting fluid pressure, fluid flow or motor current at the linear polisher during a polishing process. A controller receiving the information provided by the sensors includes an algorithm for adjusting the pad conditioning process to achieve a desired pad smoothness based on the sensor data. The method includes obtaining baseline data on preferred linear polisher characteristics associated with desired pad smoothness and using the baseline data to adjust a pad conditioning regimen on a linear polisher to achieve the desired pad smoothness in situ.

Abstract: A method of monitoring the wear of a grinding wheel measures the force exerted between the wheel and a workpiece, and generates a warning signal when the measured force exceeds a predetermined threshold value. A signal proportional to the normal grinding force is obtained by measuring the electrical power drawn by the wheelfeed drive motor during grinding. The value of the force proportional signal is compared with corresponding values obtained during the grinding of one or more preceding similar workpieces. Where the grinding wheel includes an annular ridge for grinding an undercut in a workpiece, the ridge portion of the wheel will normally perform more work than the remainder of the wheel, will be liable to the greatest wear, and the force signals will be measured while such portions of the wheel are performing work. The method may be used with electroplated CBN grinding wheels.

Abstract: In a method of grinding a component, a reduction in the finish grinding time is achieved by rotating the component through only a single revolution during a final grinding step and controlling the depth of cut and the component speed of rotation during that single revolution, so as to maintain a substantially constant specific metal removal rate during the final grinding step. The headstock velocity can vary between 2 and 20 rpm during a single revolution of the cam during the final grinding step. Using a grinding machine having 17.5 kw of available power for rotating the wheel, and cutting with a grinding wheel in the range 80–120 mm diameter typically the depth of cut lies in the range of 0.25 to 0.5 mm.

Abstract: A method for selectively sensing and removing asperities from the surface of hard disk drive media is disclosed. A thermally controlled flying height burnish slider is flown on a test stand with its thermal flying height control deactivated. The burnish slider flies at a nominal flying height over the surface of the media to remove any existing loose particles from the surface. A glide slider coupled to a PZT sensor is then flown over the surface of the media, the PZT sensor head mapping locations of any asperities on the surface of the media. The thermal flying height controlled burnish slider is next flown over the surface of the media with the thermal flying height control activated. The thermal flying height control is actuated when a mapped location of an asperity on the surface is proximate to the burnish slider, causing the burnish slider to protrude, wearing off the asperity.

Abstract: A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. The eddy current monitoring system or the optical monitoring system can be used to determine the substrate edge. A focusing optic can be used to improve the accuracy of the optical monitoring system in detecting the edge of the substrate.

Abstract: A system for selectively sensing and removing asperities from hard disk drive disk is disclosed. The system includes a test stand supporting the disk, the test stand having at least one suspension for flying over a surface of the disk. The system also includes a glide pad coupled to the at least one suspension for flying over the surface and locating asperities. A PZT sensor is coupled to the glide pad for sensing and mapping asperities on the surface of the disk. A burnish pad is coupled to the at least one suspension for wearing-away sensed and mapped asperities on the surface of the disk and a thermal fly height controller is coupled to the burnish pad for protruding the burnish pad when it is proximate to one of the mapped asperities for facilitating the wearing-away of the mapped asperity.

Abstract: In a system and a method according to the present invention, a sensor signal, such as a motor current signal, from a drive assembly of a pad conditioning system is used to estimate the status of one or more consumables in a CMP system.

Abstract: A polishing tool that includes: an arbor with a shank having a first cylindrical axis; an offset cylinder extending from the shank, the offset cylinder having a second cylindrical axis, the first cylindrical axis being offset from the second cylindrical axis and parallel thereto, the offset cylinder terminating at a distal end thereof with a support surface that is angled in a range of from about 1° to about 20° from perpendicular to the first and second cylindrical axes; and a toroidal polishing head supported on the support surface, rotation of the shank causing an oscillating rotational movement of the toroidal polishing head.

Abstract: The object of the present invention is to provide a double side polisher capable of maintaining thickness control accuracy over a long period of time without being affected by a gradual change in thickness of a polishing pad, and a thickness control method. The first polishing operation is finished based on the polishing duration time, and the second and subsequent polishing operations are finished based on the measured distance values of a distance sensor, and after each polishing operation including the first polishing, the measured value of the distance sensor is calibrated based on the measured value and target value of finishing thickness of the work piece. Since the calibration is performed for each polishing operation, it is possible to maintain thickness control accuracy over a long period of time.