Abstract: Embodiments of a polishing article for processing a substrate are provided. In one embodiment, a polishing article for processing a substrate comprises a fabric layer having a conductive layer disposed thereover. The conductive layer has an exposed surface adapted to polish a substrate. The fabric layer may be woven or non-woven. The conductive layer may be comprised of a soft metal and, in one embodiment, the exposed surface may be planar.

Abstract: An article or polishing pad for altering a surface of a work piece includes a polymer matrix created by reaction injection molding of size controlled gas bubbles within a polyurethane matrix. The proposed liquid urethane precursor is first injected into an actuated mold and cured. The molded product is then removed from the mold and double side faced or ground to form a single thin polishing pad comprising a single layer of homogeneous material.

Abstract: An optical sensor that includes a light source and a detector is located within a cavity in a polishing pad so as to face the surface that is being polished. Light from the light source is reflected from the surface being polished and the detector detects the reflected light. The electrical signal produced by the detector is conducted to a hub located at the central aperture of the polishing pad. The disposable polishing pad is removably connected, both mechanically and electrically to the hub. The hub contains electronic circuitry that is concerned with supplying power to the optical sensor and with transmitting the electrical signal to a non-rotating station. Several techniques are described for accomplishing these tasks. The system permits continuous monitoring of an optical characteristic of a surface that is being polished, even while the polishing machine is in operation, and permits the end point of the polishing process to be determined.

Abstract: A chemical mechanical polishing pad and a system and a method for using such a pad are described. The polishing pad includes pockets of continuous porosity, each of the pockets being separated from the other pockets by a non-porous matrix. The non-porous matrix may include a network of trenches, or may have pores which have been filled with a material. The material may include a polymer resin. A system for polishing a wafer includes the polishing pad mounted on a platen. A drive assembly creates relative rotation between the wafer and the polishing pad through a drive shaft. The drive shaft may be connected to the platen or it may be connected to a wafer holder which holds the wafer. Alternatively, one drive shaft may be connected to the platen and another drive shaft may be connected to the wafer holder, and a pair of drive assemblies drive the drive shafts.

Abstract: There is provided a method for polishing a semiconductor wafer, in which by using a specific polishing cloth as one for use in a mirror polishing step for the semiconductor wafer, especially in a final polishing stage thereof, generation of micro-scratches and blind scratches on a wafer surface is prevented. In a polishing step of mirror polishing the semiconductor wafer using a polishing cloth, the polishing is performed using the polishing cloth with a nap layer of 500 ?m or more in thickness.

Abstract: Embodiments of a ball assembly are provided. In one embodiment, a ball assembly includes a housing, a ball, a conductive adapter and a contact element. The housing has an annular seat extending into a first end of an interior passage. The conductive adapter is coupled to a second end of the housing. The contact element electrically couples the adapter and the ball with is retained in the housing between seat and the adapter.

Abstract: The invention is directed to chemical-mechanical polishing pads comprising a transparent window. In one embodiment, the transparent window comprises an inorganic material and an organic material, wherein the inorganic material comprises about 20 wt. % or more of the transparent window. In another embodiment, the transparent window comprises an inorganic material and an organic material, wherein the inorganic material is dispersed throughout the organic material and has a dimension of about 5 to 1000 nm, and wherein the transparent window has a total light transmittance of about 30% or more at at least one wavelength in the range of about 200 to 10,000 nm. In yet another embodiment, the transparent window comprises an inorganic/organic hybrid sol-gel material. In an additional embodiment, the transparent window comprises a polymer resin and a clarifying material, wherein the transparent window has a total light transmittance that is substantially higher than a window comprising only the polymeric resin.

Abstract: A polishing pad characterized by having a mechanism for supplying water to the plane of the polishing pad in contact with the article to be polished, in particular, in case the mechanism comprises a domain structure having an area of 1×10?6 m2 or smaller, reduces the generation of scratches and the dust adhesion on the surface of the article to be polished, while increasing polishing rate at low dishing and erosion; hence, the product is applicable to the field of surface polishing of semiconductor thin films.

Abstract: The present invention describes a method for creating a differential polish rate across a semiconductor wafer. The profile or topography of the semiconductor wafer is determined by locating the high points and low points of the wafer profile. The groove pattern of a polish pad is then adjusted to optimize the polish rate with respect to the particular wafer profile. By increasing the groove depth, width, and/or density of the groove pattern of the polish pad the polish rate may be increased in the areas that correspond to the high points of the wafer profile. By decreasing the groove depth, width, and/or density of the groove pattern of the polish pad the polish rate may be decreased in the areas that correspond to the low points of the wafer profile. A combination of these effects may be desirable in order to stabilize the polish rate across the wafer surface in order to improve the planarization of the polishing process.

Abstract: As one of many embodiments of the present invention, a seamless polishing apparatus for utilization in chemical mechanical polishing is provided. The seamless polishing apparatus includes a polishing pad where the polishing pad is shaped like a belt and has no seams. The seamless polishing apparatus also includes a base belt where the base belt includes a reinforcement layer where the reinforcement layer is a fibrous-type material. In addition, the polishing pad is located over the base belt.

Abstract: A porous polishing pad for use chemical/mechanical planarization of semiconductor wafers is provided with a transparent section formed in a section of the porous polishing pad by direct injection of a polymeric material into a modified portion of the pad. The modified section may be either a low density area, or may be created by removing a complete vertical section of the pad. The injected polymer forms an integral window with the pad by flowing into the matrix of the pad at the pad/window interface. No additional reinforcement is required to hold the window in place; however, adhesive and/or another impervious layer may be attached behind the window for additional support. In an alternative embodiment, a separate and distinct window-plug is inserted into a cutout section of the pad, and bonded to the pad by one or more binding film layers on the back, non-working surface of the pad.

Abstract: A chemical mechanical polishing (CMP) pad includes a unitary body having a first side and a second side, the first side having a plurality of holes formed therein, and the second side having a plurality of grooves formed therein. Each of the plurality of holes in the first side is aligned with one of the plurality of grooves in the second side.

Abstract: The invention provides polishing pads for chemical-mechanical polishing comprising a porous foam and a method for their production. In one embodiment, the porous foam has an average pore size of about 50 ?m or less, wherein about 75% or more of the pores have a pore size within about 20 ?m or less of the average pore size. In another embodiment, porous foam has an average pore size of about 20 ?m or less. In yet another embodiment, the porous foam has a multi-modal pore size distribution. The method of production comprises (a) combining a polymer resin with a supercritical gas to produce a single-phase solution and (b) forming a polishing pad from the single-phase solution, wherein the supercritical gas is generated by subjecting a gas to an elevated temperature and pressure.

Abstract: In a stepping motor in which a cylindrical magnet which is magnetized in an axial direction is coupled with a rotary shaft and the magnet is clamped with rotor stacks formed by laminating annular magnetic plates, the surfaces of which are electrically insulated, to form a rotor, and around the outer circumference of the rotor stator cores which are wound with stator coil are disposed, a sleeve is pressed in between the magnet and the rotor stacks, and the rotary shaft and interposed therebetween. The cutting operation for the outer diameter of the rotor during the manufacturing processes is carried out while holding both ends of the sleeve, subsequently, the rotary shaft is inserted, thereby, regardless of the length of the rotary shaft, the manufacturing processes are carried out to reduce the number of the molds.

Abstract: A superabrasive wire saw having a plurality of individual coated superabrasive particles attached to a wire with an organic binder is disclosed and described. The superabrasive particle can be coated with a solidified coating of a molten braze alloy that is chemically bonded to the superabrasive particle. The organic binder can optionally contain filler materials and/or an organometallic coupling agent to improve the retention of coated superabrasive particles. The resulting superabrasive wire saws can be produced having diameters of less than 0.5 mm which significantly reduce kerf loss. Various methods for making and using such a superabrasive wire saw are additionally disclosed and described.

Abstract: An abrasive pad is suitable for the wet-chemical grinding of a substrate surface. The novel abrasive pad has a polymer matrix with a defined water-solubility. The water-solubility is realized by the level of nonpolar and polar repeat units in the polymers.

Abstract: The present invention relates to a polishing pad. In particular, the polishing pad of the present invention comprises a sublayer, a middle layer, and a top layer which can function as a polishing layer. The polishing pad of the present invention is useful for polishing articles and particularly useful for chemical mechanical polishing or planarization of a microelectronic device, such as a semiconductor wafer.

Abstract: The invention provides polishing pads for chemical-mechanical polishing comprising a porous foam and a method for their production. In one embodiment, the porous foam has an average pore size of about 50 ?m or less, wherein about 75% or more of the pores have a pore size within about 20 ?m or less of the average pore size. In another embodiment, porous foam has an average pore size of about 20 ?m or less. In yet another embodiment, the porous foam has a multi-modal pore size distribution. The method of production comprises (a) combining a polymer resin with a supercritical gas to produce a single-phase solution and (b) forming a polishing pad from the single-phase solution, wherein the supercritical gas is generated by subjecting a gas to an elevated temperature and pressure.

Abstract: The invention provides polishing pads for chemical-mechanical polishing comprising a porous foam and a method for their production. In one embodiment, the porous foam has an average pore size of about 50 ?m or less, wherein about 75% or more of the pores have a pore size within about 20 ?m of less of the average pore size. In another embodiment, porous foam has an average pore size of about 20 ?m or less. In yet another embodiment, the porous foam has a multi-modal pore size distribution. The method of production comprises (a) combining a polymer resin with a supercritical gas to produce a single-phase solution and (b) forming a polishing pad from the single-phase solution, wherein the supercritical gas is generated by subjecting a gas to an elevated temperature and pressure.

Abstract: A web-format polishing pad for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies, and methods for making and using such a web-format pad. In one aspect of the invention, a web-format polishing pad for planarizing a microelectronic substrate is made by slicing a cylindrical body of pad material along a cutting line that is at least substantially parallel to a longitudinal centerline of the body and at a radial depth inward from an exterior surface of the body. For example, a web of pad material can be sliced from the body by rotating the cylindrical body about the longitudinal centerline and pressing a cutting element against the rotating cylindrical body along the cutting line. The cutting element can be a knife with a sharp edge positioned at the cutting line and a face extending along a tangent of the cylindrical body.

Abstract: A polishing pad having an optical assembly that does not cause excess wear on a wafer workpiece. The optical assembly is disposed within the pad such that it may move in response to forces applied to the optical assembly. A damping pad may be disposed on the optical assembly to reduce vibrations and further increase the sensitivity of optical measurements.

Abstract: Ceramic aggregate particles comprising a plurality of solid particulates bonded together by ceramic binding material and methods of providing a plurality of such particles having substantially uniform cross-sectional shape are provided. The ceramic aggregate particles may incorporate a high percentage of solid particulates. The ceramic binding material may closely conform to the outermost surfaces of the solid particulates contained within the ceramic aggregate particle. When abrasive particulates are employed as the solid particulates, abrasive articles can be made which provide consistent high cut rates and consistent surface finish over relatively long periods of time.

Abstract: A porous polishing pad for use chemical/mechanical planarization of semiconductor wafers is provided with a transparent section formed in a section of the porous polishing pad by direct injection of a polymeric material into a modified portion of the pad. The modified section may be either a low density area, or may be created by removing a complete vertical section of the pad. The injected polymer forms an integral window with the pad by flowing into the matrix of the pad at the pad/window interface. No additional reinforcement is required to hold the window in place; however, adhesive and/or another impervious layer may be attached behind the window for additional support. In an alternative embodiment, a separate and distinct window-plug is inserted into a cutout section of the pad, and bonded to the pad by one or more binding film layers on the back, non-working surface of the pad.

Abstract: There is provide a polishing member including photocatalyst particles that exhibit photocatalysis on light irradiation, and a support material that supports the photocatalyst particles. There is also provided a method of manufacturing a semiconductor device, including polishing a surface of a workpiece that is to be used as at least a portion of the semiconductor device with the polishing member with a fluid interposed between the polishing member and the surface of the workpiece while performing light irradiation onto the polishing member.

Abstract: A method of joining sections of polishing pad for use in the chemical mechanical planarization of a semiconductor wafer. Two sections of polishing pad are positioned so that they contact one another. The two sections are then welded together to create a robust joint. The joint is resistant to infiltration of slurry and is not susceptible to delamination that commonly occurs in a typical laminate joint.

Abstract: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

Abstract: An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoint detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the invention comprises a water-insoluble matrix material such as crosslinked 1,2-polybutadiene, and a water-soluble particle such as ?-cyclodextrin dispersed in this water-insoluble matrix material, and has a light transmitting properties so that a polishing endpoint can be detected with a light.

Abstract: A method of making an abrading implement includes the steps of disposing a porous member for aiding in abrasion adjacent a first surface within a mold and supplying two reactive liquid components into the mold in a manner in which the two materials enter onto a second surface of the mold opposing the first surface, whereupon a reaction between the components form a raw implement of structural foam which is bonded to the porous member. Subsequent the reaction, the raw implement is removed from the mold and cut, preferably sawn, in a manner to provide an abrasive implement having a surface portion the foam exposed from the cut to aid in gripping the same by one's hand. An abrading implement is also provided by the method.

Abstract: A polishing pad for use in chemical mechanical polishing of substrates that being made of a porous structure comprising a matrix consisting of fibers, such as cotton linter cellulose bound with a thermoset resin, such as phenolic resin. The polishing pad surface has voids in which polishing slurry flows during chemical mechanical polishing of substrates, and in which debris formed during the chemical-mechanical polishing of substrates is temporarily stored for subsequent rinsing away. The polishing surface of the pad is ground to form asperities that aid in slurry transport and polishing, as well as opening the porous structure of the pad. The porous pad contains nanometer-sized filler-particles that reinforce the structure, imparting an increased resistance to wear as compared to prior-art pads. Also disclosed is a method of making the polishing pad.

Abstract: The present invention is directed to a method of making a three-dimensional fixed abrasive article, and a three dimensional fixed abrasive made thereby. The method comprises providing an abrasive composition comprising a plurality of abrasive particles and a binder precursor. The binder precursor comprises a polymerizable material consisting essentially of an ethylenically unsaturated material having one or more terminal functional groups of the same type of reactive functionality, a photoinitiator, and a thermal initiator. The abrasive composition is then applied onto a backing. The method then comprises at least partially curing the binder precursor by activating the photoinitiator, and further curing the binder precursor by activating the thermal initiator to provide a three-dimensional fixed abrasive.

Abstract: An object of the present invention is to provide a polishing pad for a semiconductor wafer which can perform a stable polishing while preventing a polishing layer from floating up from a supporting layer and a surface of a polishing pad from bending during polishing using a polishing pad having a multi-layered structure of a polishing layer and a supporting layer, and a polishing process using thereof. The polishing pad of the present invention is characterized in that it is comprising a supporting layer which is a non-porous elastic body and a polishing layer which is laminated on one surface of the supporting layer, and a polishing process using thereof. Shore D hardness of the polishing layer is preferably 35 or more, and hardness of the supporting layer is preferably lower than that of the polishing layer.

Abstract: The invention provides a backing for an abrasive article comprising a sheet-like polymeric substrate having a first major surface including a pattern of non-abrasive raised areas and depressed areas and an opposite second major surface including a plurality of shaped engaging elements that are one part of a two-part mechanical engagement system. An abrasive product is provided by coating at least the raised areas of the backing with an abrasive coating.

Abstract: An objective of the present invention is to provide a burnishing pad, capable of removing dirt by burnishing a place (i.e., a dirty point) onto which dirt attaches to impart sufficient luster, and being biodegraded; a burnishing machine equipped with the burnishing pad; and a burnishing method using the burnishing pad. The burnishing pad of the invention is comprised of a lock-like fiber composite in which adjacent fibers are bonded at intersection thereof, wherein said fiber is at least one selected from the group consisting of a vegetable fiber and an animal fiber. And another burnishing pad is a fiber composite comprised of thick fibers of 150 ?m or more in fiber diameter. These pads can be equipped with a porous supporting layer, respectively. The porous supporting layer has a mean 5% modulus strength of 20 N/5 cm width or more at 70° C. and a unit area weight of 100 g/m2 or less.

Abstract: A method for producing a polishing pad comprising (a) providing a porous polymer structure, (b) compressing at least a region of the porous polymer structure to provide a translucent region, and (c) forming a polishing pad comprising the porous polymer structure, whereby a polishing pad is produced comprising the translucent region. Also provided is a polishing pad produced according to this method, and a polishing pad comprising a region that is at least translucent, wherein the translucent region is porous, as well as a method of polishing a substrate using a pad of the invention.

Abstract: A high quality polishing pad suitable for chemical mechanical polishing (CMP) of semiconductor wafer, etc. which is not affected by the change of polishing conditions during polishing and can attain excellent removal rate, capacity of step height reduction and uniformity is described, wherein a polyurethane-based foam 12 having fine and uniform cells 20 suitable for polishing of semiconductor material, etc. obtained by reaction-injection molding a gas-dissolved raw material prepared by dissolving an inert gas in a mixture of a polyurethane or polyurea as a main raw material and various subsidiary raw materials under pressure is used.

Abstract: A processing method of a polishing pad for semiconductor wafer capable of forming a groove, a concave portion, a through hole and the like having a small surface roughness of the inner surface of the groove and the like of 20 &mgr;m or less, a high dimensional accuracy and a uniform cross-sectional shape, and a polishing pad for semiconductor wafer. In the processing method, a surface of a polishing pad including a water-insoluble matrix containing a crosslinked polymer and a water-soluble particle dispersed in the water-insoluble matrix is processed by cutting and the like. Additionally, when a groove and the like are formed, it is preferable that a polishing pad is placed on one surface side of a machining table having a sucking hole, the pad is fixed on the one surface side of the machining table by vacuuming sucking it from the other surface of the machining table, and then a groove and the like are formed.

Abstract: An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate and a mounting surface. A plurality of perforations may be formed in the polishing article for flow of material therethrough. In another aspect, a polishing article for polishing a substrate includes a body having a polishing surface and a conductive element disposed therein. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. The polishing surface may have one or more pockets formed therein. The conductive element may be disposed in each of the polishing pockets.

Abstract: Abrasive body (1) capable of being used in surface processing devices that has an active face (2a) provided with appropriate means of abrasion (3) intended to perform finishing operations on the surface of an object when the said body is set in motion. The abrasive body has a predetermined number of substantially passing cuts (6) defined by the respective flaps (7, 8) lying side by side. When the abrasive body is set in motion on an object to be processed, flaps (7, 8) deform in such a manner as to create appropriate opening that will permit the abraded dust particles to be removed solely and exclusively from that part of the abrasive body actually in contact with the object (FIG. 2).

Abstract: A chemical mechanical polishing to polish a substrate having a layer to be polished thereon is described. A pre-polishing process is performed using a softer polishing pad to remove partially raised parts of the layer to be polished before conducting a polishing process using a harder polishing pad. Since the first polishing pad is flexible, porous and with low density, the first polishing pad can be deformed to increase contact areas between the first polishing pad and the raised part of the layer to be polished, and the abrasives are embedded easily in holes of the surface of the first polishing pad. Ultimately, the layer to be polished can be polished directly during the pre-polishing process. Therefore, the processing time is reduced, the consumption of the slurry is decreased and the process cost can be cut down substantially.

Abstract: An abrasive molding consisting essentially of inorganic particles having an average particle diameter in the range of 0.005 &mgr;m to 0.3 &mgr;m, and having a relative density in the range of 45% to 90%, provided that pores having a diameter of at least 0.5 &mgr;m are excluded from the molding. The abrasive molding is used for polishing a material to be polished by using a polishing liquid, preferably water or an aqueous solution of an alkali metal hydroxide, which does not contain a loose abrasive grain.

Abstract: There are provided a polishing pad which exhibits excellent polishing stability and excellent slurry retainability during polishing and even after dressing, can prevent a reduction in polishing rate effectively and is also excellent in an ability to flatten an substrate to be polished, and a method for producing the polishing pad. The method comprises dispersing water-soluble particles such as &bgr;-cyclodextrin into a crosslinking agent such as a polypropylene glycol so as to obtain a dispersion, mixing the dispersion with a polyisocyanate such as 4,4′-diphenylmethane diisocyanate and/or an isocyanate terminated urethane prepolymer, and reacting the mixed solution so as to obtain a polishing pad having the water-soluble particles dispersed in the matrix.

Abstract: A grinding wheel for polishing, which comprises a grinding substrate and diamond-containing resin fibers implanted in the substrate in a form of a brush.

Abstract: The present invention provides an abrasive pad for abrading a surface to be abraded in the presence of an abrasive solution, which includes a hydrophobic polymer as a base material, and in which a graft-polymer chain having a hydrophilic group is introduced into the surface of the hydrophobic polymer. The hydrophilic group possessed by the graft-polymer chain is preferably a nonionic hydrophilic group selected from the group consisting of hydrophilic groups having an N-monoalkyl substituted structure and hydrophilic groups having an N-dialkyl substituted amide group. An amount of the hydrophilic graft-polymer to be introduced into the base material is preferably 10.0% to 150.0% in terms of graft ratio.

Abstract: A method for selectively altering a polishing pad adhesive layer includes providing a mask having transparent regions and opaque regions and directing radiation toward the mask so that the radiation passes through the transparent regions and impinges onto the adhesive layer on the polishing pad. The area of the adhesive layer corresponding to the transparent regions of the mask is cured to be less adhesive. The area of the adhesive layer corresponding to the opaque regions remain adhesive.

Abstract: A cutting disc core for a circular shaped saw blade which has a circular shaped body which has a center hole and a circular peripheral edge upon which is to be mounted a plurality of spaced apart cutting segments that is to perform the cutting of the saw blade. Surrounding the center hole and formed within the body are a plurality of slits with there being a solid tab that is integrally connected to the body located between each directly adjacent pair of slits. The tab constitutes a frangible seal with the circular ring or bushing which is formed about the center hole to be removable by being forcibly physically separated from the body.

Abstract: Agglomerate abrasive grain is disclosed. The agglomerate abrasive grain can be incorporated into abrasive products such as coated abrasives, bonded abrasives, nonwoven abrasives, and abrasive brushes. A method of making agglomerate abrasive grain is also disclosed.

Abstract: A supporting disk for a surface grinding wheel comprises a glass-fiber reinforced phenolic resin body which has an upper covering layer of a textile glass fabric or a glass-yarn layer, an intermediate layer of a fiber mat, and a lower covering layer of a textile glass fabric or a glass-yarn layer.

Abstract: The invention provides polishing pads for chemical-mechanical polishing comprising a porous foam and a method for their production. In one embodiment, the porous foam has an average pore size of about 50 &mgr;m or less, wherein about 75% or more of the pores have a pore size within about 20 &mgr;m or less of the average pore size. In another embodiment, porous foam has an average pore size of about 20 &mgr;m or less. In yet another embodiment, the porous foam has a multi-modal pore size distribution. The method of production comprises (a) combining a polymer resin with a supercritical gas to produce a single-phase solution and (b) forming a polishing pad from the single-phase solution, wherein the supercritical gas is generated by subjecting a gas to an elevated temperature and pressure.

Abstract: The invention provides polishing pads for chemical-mechanical polishing comprising a porous foam and a method for their production. In one embodiment, the porous foam has an average pore size of about 50 &mgr;m or less, wherein about 75% or more of the pores have a pore size within about 20 &mgr;m or less of the average pore size. In another embodiment, porous foam has an average pore size of about 20 &mgr;m or less. In yet another embodiment, the porous foam has a multi-modal pore size distribution. The method of production comprises (a) combining a polymer resin with a supercritical gas to produce a single-phase solution and (b) forming a polishing pad from the single-phase solution, wherein the supercritical gas is generated by subjecting a gas to an elevated temperature and pressure.

Abstract: The invention provides polishing pads for chemical-mechanical polishing comprising a porous foam and a method for their production. In one embodiment, the porous foam has an average pore size of about 50 &mgr;m or less, wherein about 75% or more of the pores have a pore size within about 20 &mgr;m or less of the average pore size. In another embodiment, porous foam has an average pore size of about 20 &mgr;m or less. In yet another embodiment, the porous foam has a multi-modal pore size distribution. The method of production comprises (a) combining a polymer resin with a supercritical gas to produce a single-phase solution and (b) forming a polishing pad from the single-phase solution, wherein the supercritical gas is generated by subjecting a gas to an elevated temperature and pressure.