Semiconductor device

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Description

FIG. 1 is a front, bottom, right side perspective view of a semiconductor device showing our new design;

FIG. 2 is a rear, top, right side perspective view thereof;

FIG. 3 is a front view thereof;

FIG. 4 is a rear view thereof;

FIG. 5 is a left side view thereof;

FIG. 6 is a right side view thereof;

FIG. 7 is a top view thereof; and,

FIG. 8 is a bottom view thereof.

The dashed broken lines are for the purpose of illustrating portions of the semiconductor device and form no part of the claimed design.

The dot-dash broken lines define the bounds of the claimed design and form no part thereof.

Claims

The ornamental design for a semiconductor device as shown and described.

Referenced Cited
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Patent History
Patent number: D1156338
Type: Grant
Filed: Jun 3, 2025
Date of Patent: Nov 3, 2026
Assignee: Mitsubishi Electric Corporation (Tokyo)
Inventors: Yuki Matsutaka (Tokyo), Toshiya Tadakuma (Tokyo)
Primary Examiner: Catherine S Posthauer
Assistant Examiner: Mary Claire Nemeth
Application Number: 30/006,582