Abstract: A process chamber (14) for processing a substrate (12) in a plasma, comprises a support for supporting the substrate having a surface with a perimeter (32). A gas distributor is provided for distributing process gas into the chamber (14). A plasma generator (40) is used to generate a plasma comprising plasma species from the process gas. A plurality of electrical ground pathways (80) around the perimeter (32) of the substrate (12) are spaced apart, electrically isolated from one another, and provide electrical paths to ground for the charge carried by the plasma species. Preferably, the ground pathways (80) extend through a dielectric surface (70) abutting and extending substantially continuously around the perimeter (32) of the substrate (12).

Abstract: Methods and devices for producing plasmas of more uniform density and greater height than plasmas generated by previously known magnetron-type plasma-generating devices. The present invention utilizes electrodes containing multiple magnets positioned such that like magnetic poles of the magnets are all facing in substantially the same direction.

Abstract: A lift pin 95 for dechucking a substrate 15 held to a chuck 50 by residual electrostatic charge, the substrate being processed in a plasma formed using RF currents, is described. The lift pin 95 comprises (a) a movable elongated member 110 having a tip 115 suitable for lifting and lowering the substrate 15 off the chuck 50, and capable of forming an electrically conductive path between the substrate 15 and a current sink 105. The electrically conductive path comprises at least one of the following: (1) a frequency selective filter capable of filtering RF currents flowing therethrough so that substantially no RF currents flow through the filter; or (2) a resistor having a resistance sufficiently elevated to reduce the voltage caused by RF currents flowing therethrough, by at least about 50%.

Abstract: A system for processing a substrate with plasma. In the system, a substrate holder includes an energy application member for energizing an exposure face other than a substrate placement portion. The energy application member energizes the exposure face by an induced current when high-frequency electromagnetic wave power is applied, by heat generated upon energization, or by ion bombardment when a high-frequency electric field is applied. Perfluorocarbon 14 gas and oxygen gas introduced by a gas introduction mechanism form plasma by a power supply mechanism for etching and removing a thin film deposited on the exposure face. At this time, the etching is accelerated by energy given by the energy application member.

Abstract: There are provided a plasma processing apparatus and a plasma processing method which are suitable for processing a processed substance using a gas plasma containing fluorine atoms.Structural materials used for a high vacuum processing chamber of a plasma processing apparatus are aluminum, aluminum having an anodic oxide coating processed surface and a material having a film of aluminum oxide or a film having aluminum oxide as a main component. A part or the whole of the inner surfaces of the processing chamber is constructed with a pre-fluorinated material.When plasma processing of a processed substance is performed using a gas plasma containing fluorine atoms in the processing chamber having the pre-fluorinated inner surfaces, time-varying processing characteristic can be suppressed.

Abstract: An electrode unit of a thermal CVD apparatus is used to generate plasma discharge for an in-situ cleaning process. The electrode unit is configured by a substrate holder and a shield member connected to a high frequency power supply, the gas supply section electrically grounded, and an auxiliary electrode disposed in the gas supply section. In a film deposition process, a reactive gas is supplied from the gas supply section, and the reactive gas is excited in a space in front of a substrate to deposit a thin film onto the substrate. In a periodical in-situ cleaning process, a cleaning gas is supplied from the gas supply section and a cleaning discharge is generated to remove unwanted films deposited on the substrate holder and the shield member. The auxiliary electrode causes the cleaning discharge to be concentrated in a space around unwanted films.

Abstract: An apparatus (20) for uniformly processing substrates (25) having a surface with a center (80) and a peripheral edge (85). The apparatus (20) comprises (i) a process chamber (30) having a gas distributor (55) for distributing process gas in the process chamber (30); (ii) a support (75) for supporting a substrate (25) in the process chamber (30); (iii) a plasma generator for forming a plasma from the process gas in the process chamber (30); and (iv) a focus ring (90) in the process chamber (30). The focus ring (90) comprises (a) a wall (95) surrounding the substrate (25) to substantially contain the plasma on the substrate surface, and (b) a channel (100) in the wall (95). The channel (100) has an inlet (105) adjacent to, and extending substantially continuously around the peripheral edge (85) of the substrate surface.

Abstract: This invention provides a vapor phase processing apparatus which forms a film on a substrate by using a source gas, and includes a processing chamber for accommodating the substrate, a gas supply unit, having a gas supply hole, for supplying a source gas into the processing chamber, and a detection unit for detecting a degree of clogging of the gas supply holes.

Abstract: A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.

Abstract: The present invention provides a method and apparatus for introducing gases into a processing chamber and cleaning isolated surfaces thereof. In one embodiment, the apparatus provides a gas distribution system which comprises a face plate and a blocker plate located adjacent the face plate wherein the blocker plate is electrically insulated from the face plate. An RF power source is electrically connected to the face plate and a switch that selectively connects the blocker plate to the RF power source or grounds the blocker plate. When the power source is applied to the faceplate and the blocker plate is grounded, an energy potential is formed between the face plate and the blocker plate. The energy potential is sufficient to strike a plasma from cleaning gases introduced into the gas distribution system to clean the apertures and surfaces of both the face plate and the blocker plate.

Abstract: A thin film coating system incorporates separate, separately-controlled deposition and reaction zones for depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated deposition and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.

Abstract: The present invention relates to a process for producing crystallographic oriented oxide thin films having an NaCl-type structure, a spinel structure or a Wurtzite structure used as a buffer layer to obtain a functional oxide thin film such as a superconductive oxide thin film and a ferroelectric thin film, and a chemical vapor deposition apparatus used therefor. A rotatable substrate holder is provided in a reaction chamber. The substrate holder, which holds substrates thereunder, includes a substrate heater. The substrate holder is grounded to provide an electrode. Another electrode, which is connected to a high frequency power source, is located opposing the substrate holder in the reaction chamber. At a side wall of the reaction chamber, an exhaust is arranged. In a plasma electric discharge area formed between the substrate holder and the electrode, a material gas supplier is located, having a predetermined tilt angle .theta. with respect to the substrate holder.

Abstract: A plasma processing method and a plasma processing apparatus are provided in which a deposition film is formed, on a substrate serving also as an electrode, by application of high frequency power ranging from 20 MHz to 450 MHz with simultaneous application of DC voltage ranging from 30 to 300 V or -30 to -300 V and/or AC voltage ranging from 30 to 600 V to the substrate in an evacuatable reaction chamber. This method make it practicable to uniformize the plasma and the film thickness distribution independently of the discharge frequency and the applied high frequency power, thereby broadening the allowable range of conditions of the processing such as film formation and the allowable range of the design of the apparatus.

Abstract: A plasma processing apparatus has first and second electrodes disposed around a tubular chamber for generating a plasma. Each of the first and second electrodes comprises a plurality of web-shaped electrode segments spaced by a constant distant and disposed substantially halfway around the chamber. Each of the web-shaped electrode segments has opposite ends fastened to a pair of respective insulators disposed diametrically opposite to each other across the chamber. The web-shaped electrode segments of the first electrode are electrically connected to each other by a conductor on one of the insulators, and the web-shaped electrode segments of the second electrode are electrically connected to each other by a conductor on the other conductors. The first electrode is connected to a high-frequency power supply, and the second electrode is connected to ground.

Abstract: A dielectric member is provided at the upper portion of a grounded vacuum reaction vessel. Other portion of the vacuum reaction vessel is grounded. A flow path is formed within the dielectric member. The flow path is covered with a conductive member and an insulation member. The conductive member is grounded at the same voltage as the vacuum reaction vessel. Also, a temperature measuring element is buried within the dielectric member. The temperature measured by the temperature measuring element is fed back so that the temperature of the hot insulation medium is controlled. Thus, the temperature of the dielectric member is maintained constant within a range of 60.degree. to 160.degree. C.

Abstract: This invention relates to novel apparatuses for measuring deposit thickness during composite materials production. More particularly, this invention uses a composite's emission signature or a composite's reflectance signature, to measure deposit thickness.

Abstract: An apparatus for manufacturing a semiconductor device having a stage for loading a wafer includes: a flat horizontal main surface formed so that the wafer can be fully seated thereon; a perimeter surface formed at an outer portion of the stage and spaced at a predetermined distance from the flat main surface at a height lower than that of the flat main surface; and an annular slope formed between an outer circumference of the flat main surface and an inner circumference of the perimeter surface. The annular slope has a predetermined angle of inclination with respect to the flat main surface. The apparatus prevents the occurrence of plasma buildup and minimizes poor processing uniformity due to the buildup of polymer deposits on the stage.

Abstract: In a semiconductor manufacturing apparatus, the number of fine particles is counted by a particle monitor 15 mounted to a part of an exhaust pipe 12 for exhausting a gas in a process chamber 4, and an end point detection controller 31 observes the count value in time sequence to detect an end point time of plasma etching or plasma cleaning. Further, in a semiconductor manufacturing apparatus, it is possible to calibrate a detection accuracy of the particle monitor with high accuracy.

Abstract: A gas discharging device is provided which has a function as one of opposing electrodes to plasmanize a reaction gas and executes film formation and etching with a plasma gas. The device comprises a base body having a recess portion at its central portion and a through-hole for introducing a gas into the recess portion, a gas distributing plate provided in the recess portion for introducing the gas in a radial direction, and an annular gas discharging member for discharging the gas introduced by the gas distributing plate.

Abstract: For use with CVD apparatus, an apparatus and method for detecting the end point of a post treatment after an in-situ cleaning operation is provided such that reactive chemical species which remain after an in-situ cleaning operation can be accurately removed so that they do not cause harm to a film formed after the cleaning operation. The end point detection apparatus includes a reactor, an RF electrode, an RF power supply, a gas supply pipe for forming a thin film, a gas supply pipe for in-situ cleaning, a detector for detecting discharge characteristic values (i.e. the self-bias voltage, the electrode voltage, and the discharge impedance) during the post treatment performed after the in-situ cleaning, and a monitor/determining circuit for monitoring an output from the detector.

Abstract: A short-coupled-path extender comprises a two-inch thick housing that inserts as a spacer between a plasma source and a vacuum chamber in various kinds of semiconductor processing equipment. The spacer housing is generally constructed of aluminum and is thermally well-connected to the vacuum chamber and its liquid cooling system to dispose of the heat it collects from the plasma source flow. The plasma source bolts up to a central inlet port on the spacer housing that leads to a first quartz-lined antechamber within. The plasma source flow encounters a traverse metal wall at the back of the first antechamber and is forced to flow radially outward to a system of small outer ports that connect to a second quartz-lined antechamber. The plasma source flow then collects back together and exits the second antechamber through a central outlet port that bolts up to the plasma source seat on the vacuum chamber.

Abstract: A plasma assisted chemical transport system for additive or subtractive shaping of a substrate surface employs a plasma head (30) that generates a plasma (34) and is caused to scan the surface of a workpiece (51) to provide selective shaping, either by etching or depositing material. Corrosive gases of the plasma are isolated to minimize corrosive effects on the drive mechanism (20) by encompassing the plasma head within a flexible bellows (64). Scanning is in a circular path of varying radius. Acceleration induced vibrations caused by programmed varying scan velocity are avoided by use of an oppositely rotation body (56) of equal torsional inertia. Effects of linear acceleration in the radial direction are effectively avoided by making rotational scan velocity many times greater than radial scan velocity.

Abstract: A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high frequency potential is applied is arranged in the work table. First lower and second upper supply heads are arranged between the partition plate and the work table in the process chamber. SiH.sub.4 and H.sub.2 gas and He gases are supplied through the first and second supply heads. He gas is transformed into plasma while SiH.sub.4 and H.sub.2 gas is excited and decomposed by the plasma thus formed. Two coils are arranged in the upper chamber and high frequency voltages are applied to the coils to generate electromagnetic field to induce the transforming of He gas into plasma.

Abstract: An electrostatic chuck includes a pedestal having a metallic upper surface, and a layer of a porous dielectric material formed on said upper surface of the pedestal. The dielectric layer is impregnated with a plasma-resistant sealant.

Abstract: The invention provides apparatus and methods for improving systems that expose samples to reactive plasmas, and more particularly for igniting plasma within a process module. The systems are of the type which have an electrode pair and a radiofrequency generator connected to one electrode. Gas is injected between the electrodes where it is ionized and transformed into a plasma. The invention includes (i) ignition means for ionizing gas, e.g., silane, between electrodes which are separated by a small gap of less than approximately one centimeter; and (ii) a radiofrequency energy generator that preferably operates at high frequencies, e.g., 60 MHz, to transform molecules into plasma. Several embodiments of ignition means are taught by the invention, including: an electron source, an ultraviolet source, a second radiofrequency energy generator, and radioactive sources, among others.

Abstract: An improved low-volume gas distribution assembly for a chemical downstream etch tool includes a focusing collar positioned within a process chamber and having a depending shroud in close proximity to a wafer chuck. An apertured gas delivery conduit rests on channels formed in slanted sides of a central tube of the focusing collar. The apertures in the gas delivery conduit are patterned and dimensioned to provide substantially uniform distribution of a process gas over the upper surface of the workpiece. The central tube is sealed with a cover plate and the process chamber is covered with a chamber lid.

Abstract: A gas injector for use in a semiconductor etching process including a plurality of injecting holes on the central portion thereof, for injecting process gases, a plurality of bolt holes formed on edges of the gas injector, facewise against a gas supply for securing the gas injector, a plurality of bolt head-accommodating slots formed on a first gas injecting face, for receiving the heads of the bolts, and a second gas injecting disposed plurality of bolt head accommodating slots on a face opposite to the first gas injecting face, whereby the gas injector can be successively installed each side down and thus, reused after the side first disposed towards the semiconductor workpieces has become too etched to provide the desired injection pattern.

Abstract: An apparatus for subjecting a semiconductor wafer having an uncovered marginal portion, from which a photoresist film is removed, to an anisotropic etching. The apparatus comprises a process chamber which can be set to a vacuum. Upper and lower electrodes opposite to each other are provided in the process chamber. An etching gas is made into plasma between these electrodes. An electrostatic chuck is arranged on the lower electrode. A wafer is mounted on the electrostatic chuck. A ring made of dielectric material, movable upward and downward, is arranged between the electrodes. A central portion of the ring is formed as a hood having a recessed shape corresponding to the marginal portion of the wafer. During the etching, the hood covers the marginal portion of the wafer under a plasma sheath, so as to be out of contact with the wafer, thereby preventing the marginal portion of the wafer from being etched.

Abstract: An improved integrated circuit processing apparatus is disclosed wherein a protective coating of aluminum nitride (AlN), on the inner surface of a quartz (SiO.sub.2) window in the wall of the integrated circuit processing apparatus provides an enhanced resistance to the corrosive effects of halogen-containing reagents, particularly fluorine-containing gases, on the protected inner surface of the quartz window. Formation of an AlN coating having a minimum thickness of about 1 micron up to a maximum thickness of about 15 microns with a coating uniformity of .+-.15% of the average coating thickness, provides the desired protection of the inner surface of the quartz window from corrosive attack by fluorine-containing gases, such as NF.sub.3, SF.sub.6, and fluorine-containing hydrocarbons, e.g., C.sub.2 F.sub.6.

Abstract: A plasma CVD apparatus comprises an outer chamber having an exhaust hole, an inner chamber disposed in the outer chamber, a reactive gas inlet pipe communicating with the inner chamber, a first exhaust pipe disposed so as to communicate with the inner chamber, the first exhaust pipe extending at least to an inner wall surface of the outer chamber, and a second exhaust pipe communicating with the exhaust hole. Preferably the forward end of the first exhaust pipe is inserted into the exhaust hole, the forward end of the first exhaust pipe projects outward beyond the inner wall surface of the outer chamber, and a spacing is formed between the first exhaust pipe and the exhaust hole. The reactive gases flow into the inner chamber through the reactive gas inlet pipe and directly flow out of the outer chamber through the first exhaust pipe, thereby preventing the reactive gases from flowing into the outer chamber.

Abstract: Replaceable parts for a vacuum chamber including an aluminum lid and a quartz door and shield, are treated to clean and roughen their surfaces to increase adhesion of materials deposited thereon during substrate processing in said chamber, thereby reducing downtime of the equipment. The parts can be chemically cleaned, rinsed to remove the chemicals and dried in a first step; subjected to bead blasting to roughen the surface of the part and improve adhesion thereon of deposited material; in a succeeding step the part be cleaned ultrasonically to remove all loose particles; and in a last step the parts rinsed and dried to remove moisture, prior to packaging or using the part. A novel single-piece machined aluminum lid has an extension wall from a first surface that fits into the door of the chamber, and an overlying portion of said first surface that sealingly engages the door when the lid is closed.

Abstract: The plasma processing apparatus of the present invention increases the throughput of plasma processing. This objective is achieved by a composition which comprises a processing chamber (10) for performing surface processing of substrates (W) by means of a plasma discharge, load-lock chambers (20R) and (20L) whereto passage from the processing chamber (10) is possible through slots (11R) and (11L) formed in a wall portion (10a) of the processing chamber (10), a gate element (30) which opens and closes the slots (11R) and (11L) from within the processing chamber 10, and transport element(s) for transporting substrates (W) between the processing chamber (10) and the load-lock chambers (20R) and (20L).

Abstract: There are disclosed method and apparatus for producing a magnetic recording medium including a non-magnetic substrate, a magnetic layer formed on one surface of said non-magnetic substrate and a back coat layer formed on an opposite surface of said non-magnetic substrate. By using the method and the apparatus, the magnetic recording medium having the back coat layer, which exhibits a high lubricating property and a low dynamic friction coefficient, can be produced with a high operating efficiency. The method includes the steps of forming the back coat layer by a plasma chemical vapor deposition and supplying a lubricant, substantially at the time when the back coat layer is formed by the plasma chemical vapor deposition, such that the lubricant is introduced into the back coat layer.

Abstract: The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line from the supply to the gas distribution apparatus. In a preferred embodiment, the gas distribution apparatus includes a center member surrounded by at least one annular member with a gap therebetween comprising the slotted aperture. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species.

Abstract: A thermal spray apparatus for depositing a coating on to a substrate is provided which includes a plasma generator for selectively changing gas from a gaseous state to a plasma, and apparatus for filtering plasma. Powder particles entrained in the plasma change from a solid state to a molten state. The apparatus for filtering the plasma permits only a high intensity region of the plasma to pass through to the substrate.

Abstract: Supplying gases towards the web as it separates from the drum in a plasma-enhanced chemical vapor deposition system reduces the sticking of the web to the drum, and thus prevents power supply dropouts. The gas supplied can form into a plasma that helps dissipate the static charge which builds onto the web as it rolls off of the drum. By reducing the arcing and power supply dropouts, the quality of the deposited layer formed in a deposition zone can be improved.

Abstract: A single chamber of a vapor deposition system is used to deposit both Ti and TiN. A Ti layer is deposited on the sample using a noncollimated process. N.sub.2 gas is then introduced in the chamber. A TiN layer is then deposited over the Ti layer. A second Ti layer is deposited over the TiN layer. A separate Ti pasting of a TiN chamber is eliminated, thereby increasing throughput. Further, only three physical vapor deposition chambers are used, thereby allowing the fourth chamber to be used for other metal deposition. Moreover, the second Ti layer eliminates the first wafer effect and reduces sheet resistance relative to a same chamber Ti/TiN underlayer. Lastly, the Al deposited on this new stack has a stronger <111> crystallographic texture, which leads to better electromigration resistance.

Abstract: Method and device for detecting the end point of a plasma process, the method and device being capable of making it unnecessary to set a threshold every process or every processed object and also capable of correctly detecting the end point of the plasma process even if process conditions are changed. The method and device can be therefore used for more purposes. According to the end point detecting method realized by the end point detecting device, the emission spectrum of an active species having a specific wavelength and caused when a semiconductor wafer W is processed with plasma P is detected by a photodetector and the end point of the plasma process is detected on the basis of light strength changes of the emission spectrum. More specifically, an average value m and dispersed ones .sigma..sup.2 of light strengths I are calculated for a predetermined time period T.sub.

Abstract: A multiple electrode plasma reactor power splitter and delivery system to provide balanced power to a plurality of powered electrodes by utilizing the properties of quarter wave length transmission lines. Each electrode is supplied power by a separate (2N+1).lambda./4 wavelength cable, where N=0,1,2 . . . , connected to a common point at a load matching network's output. The impedance transformation properties of these lines are also employed to convert the plasma load to one that is more efficiently matched into by a standard network. Also disclosed is a technique of splitting a single large active electrode into smaller active electrodes powered by the above distribution scheme in order to achieve maximum uniformity of the reactive plasma throughout the working volume.

Abstract: The present invention discloses an apparatus and method for transferring heat from a hot electrostatic chuck to an underlying cold plate. Further, the overall structure of the electrostatic chuck in combination with the heat transfer apparatus of the present invention permits the thermal and pressure isolation of the high-temperature, vacuum process chamber containing the work piece processing surface of the electrostatic chuck from the low-temperature, atmospheric pressured heat transfer apparatus of the present invention.

Abstract: A method and apparatus for generation of a discharge in own vapors of a radio frequency electrode for sustained self-sputtering and evaporation comprising the steps of: (a) generation of a radio frequency discharge by a radio frequency electrode of a hollow geometry in an auxiliary gas introduced into the discharge area at a pressure necessary for an initiation of a hollow cathode discharge inside the hollow electrode causing sputtering and/or evaporation of the electrode surface; (b) increasing the radio frequency power to said hollow electrode to enhance density of vapors containing particles released from the electrode by the sputtering and/or evaporation in the radio frequency generated hollow cathode discharge up to a density at which a self-sustained discharge remains after the inflow of said auxiliary gas is closed and the pumping of gas is adjusted to a value necessary for the maintenance of the discharge. The hollow radio frequency electrode may serve as an inlet of said auxiliary gas.

Abstract: A plastic wrapping film is provided with one or more aluminum layers by vapor deposition and the or each layer is only partially oxidized in an oxidizing plasma so that the resulting barrier layer is distinguishable by slight reduction in transparency but excellent prevention of penetration by moisture and oxygen.

Abstract: A method of obtaining an electric discharge effected by a device for obtang an electric discharge resides in that on the surface of a cathode (3) is formed a layer (4) of oxides from the cathode material and together with an anode (2) made in the form of a hollow cylinder which encompasses the cathode (3) they are installed in a vacuum chamber (1). Equality of impedances is insured at each point on the surface of the anode (2) facing the cathode (3). Then an electric discharge is initiated in the gap between the anode (2) and the cathode (3). The movement and removal of the plasma-forming substance flow from the gap between the anode (2) and the cathode (3) is regulated by means of diaphragms (17, 18).

Abstract: A photo-excited processing apparatus includes a reaction chamber to be filled with reaction gas, photo-excitation means for irradiating a light beam from light source means through a light transmissive window formed in the reaction chamber to excite the raw gas, and multi-holed transparent diffusion means arranged between the light transmissive window of the reaction chamber and a substrate to be mounted in the reaction chamber. The multi-holed transparent diffusion means has a diffusion plane on at least one surface thereof having a plurality of holes formed therein and being transparent to the light beam.

Abstract: A method of making a gas-impermeable, chemically inert container wall structure comprising the steps of providing a base layer of an organic polymeric material; conducting a pair of reactive gases to the surface of the base layer preferably by pulsed gas injection; heating the gases preferably by microwave energy pulses sufficiently to create a plasma which causes chemical reaction of the gases to form an inorganic vapor compound which becomes deposited on the surface, and continuing the conducting and heating until the compound vapor deposit on the surface forms a gas-impermeable, chemically inert barrier layer of the desired thickness on the surface. Various wall structures and apparatus for making them are also disclosed.

Abstract: Non-bonded ceramic protection is provided for metal surfaces in a plasma processing chamber, particularly heated metal electrode surfaces, in a plasma processing chamber, to prevent or inhibit attack of the heated metal surfaces by chemically aggressive species generated in the plasma during processing of materials, without bonding the ceramic material to the metal surface. In accordance with the invention the ceramic protection material comprises a thin cover material which is fitted closely, but not bonded, to the heated metal. This form of ceramic protection is particularly useful for protecting the surfaces of glow discharge electrodes and gas distribution apparatus in plasma process chambers used for processing semiconductor substrates to form integrated circuit structures.

Abstract: A plasma processing apparatus comprises a vacuum chamber, a plasma beam generator arranged in the vacuum chamber, and a main hearth located in the vacuum chamber and is for carrying out a step of a plasma beam produced by the plasma beam generator to the main hearth. The plasma processing apparatus further comprises a permanent magnet and a hearth coil arranged in the vicinity of the main hearth to be concentric with a center axis of the main hearth to be concentric with a center axis of the main hearth. The meltability of a material and the flight distribution of the vapor particles derived from a vaporizable material are adjusted by varying an electric current supplied to the hearth coil.

Abstract: An electrostatic chuck applicable to, e.g., an epitaxial apparatus or an etching apparatus for electrostatically chucking a semiconductor substrate or wafer is disclosed. The chuck includes a stage for electrostatically retaining the wafer thereon. A plurality of lift pins are elevatable to thrust up the wafer. A plurality of release pins are arranged on the stage for thrusting up the peripheral portion of the wafer. A plurality of drive mechanisms respectively thrust up the release pins stepwise within the allowable elastic deformation range of the wafer. A control device selectively actuates the release pins via the associated drive mechanisms.

Abstract: A static chuck and a workpiece push-up pin are disposed on a susceptor which is one of opposed electrodes generating plasma. The push-up pin and the susceptor are electrically connected. A grounding circuit which discharges electric charges remaining on the susceptor is disposed in parallel with an RF power supply circuit which supplies RF power to the susceptor. Thus, electric charges remaining in the power supply circuit can be discharged and an abnormal discharging between the push-up pin and the susceptor can be prevented.

Abstract: Method and apparatus for treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. An implantation chamber defines a chamber interior into which one or more workpieces can be inserted. A support positions one or more workpieces within an interior region of the implantation chamber so that implantation surfaces of the workpieces are facing the interior region. A dopant material in the form of a gas is injected into the implantation chamber to cause the gas to occupy a region of the implantation chamber in close proximity to the one or more workpieces. A plasma of implantation material is created within the interior region of the implantation chamber. First and second conductive electrodes positioned within the implantation chamber include conductive surfaces in proximity to the chamber interior occupied by the one or more workpieces. A voltage source outside the chamber relatively biases the first and second conductive electrodes.