Abstract: The invention is directed to an arrangement for generating EUV radiation particularly for source modules in exposure installations for EUV lithography for semiconductor chip fabrication. The object of the invention, to find a novel possibility for realizing an EUV source module which appreciably improves the ratio of resources to results in the transfer of radiation from the primary source location (plasma 3) to the secondary source location (output opening (6) of the source module (1)/intermediate focus plane (62)), is met according to the invention in that the plasma (3) is formed as a volume emitter for direct illumination of the output opening (6) without collector optics (5), and the transverse dimension (d) of the plasma (3) is greater than the diameter (D) of the output opening (6), wherein the extent to which the diameter is exceeded depends on the distance (L) between the plasma (3) and the output opening (6) and on the numerical aperture (NA) of the illumination system downstream.

Abstract: Process for producing a target by thermal spraying, especially by plasma spraying, said target comprising at least one compound chosen from refractory metals, resistive oxides and volatile oxides, characterized in that at least one fraction of said compound in the form of a powder composition of said compound is sprayed by thermal spraying, onto at least one surface portion of the target, in a controlled atmosphere and in that powerful cryogenic cooling jets directed onto the target during its construction are used.

Abstract: A method of depositing phosphosilicate glass (PSG) is disclosed. The method includes a first deposition step for depositing a first PSG layer with a sputtering deposition ratio of 0.10 to 0.16, and a second deposition step for depositing a second PSG layer with a sputtering deposition ratio of 0.18 to 0.22 after the first deposition step. The first PSG layer has a thickness smaller than that of the second PSG layer. With such two-step deposition method, flower pattern having a dramatically reduced size can be formed without occurrence of clipping or formation of sidewall voids in the resultant gate patterns. Specifically, the formed flower pattern has a height reduced by about 50% and a thickness reduced by about 30%.

Abstract: An article comprising a thickness of a first film from a surface of the article, the first film having a gradient chemical composition within at least a portion of the thickness of the first film in a vertical and/or horizontal direction relative to the surface of the article, and methods and systems for producing same.

Abstract: A method of manufacturing a functionalized implant, in particular a dental implant, is provided, including first providing a substrate for the implant and applying a highly porous, hydrophilic coating which contains at least one of the following materials for functionalization: zirconium or titanium or zirconium alloy or titanium alloy, zirconium oxide or titanium oxide, calcium phosphate, calcium titanate or calcium zirconate. Further provision is made for a functionalized implant, in particular a dental implant.

Abstract: An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The Mn, Cr, or V containing layer also promotes strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use, as well as protecting against failure by electromigration of the copper during use of the devices and protecting the copper from corrosion by oxygen or water from its surroundings. In forming such integrated circuits, certain embodiments of the invention provide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces while reducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces.

Abstract: Disclosed herein is a metal-air battery having a cathode, an anode, and an electrolyte. The cathode has a cathode current collector and a composite of a porous carbon structure and a pseudocapacitive coating. The coating does not completely fill or obstruct a majority of the pores, and the pores can be exposed to a gas. The electrolyte is in contact with the anode and permeates the composite without completely filling or obstructing a majority of the pores.

Abstract: An integrated circuit package system includes: mounting an integrated circuit die adjacent to a lead; forming a first encapsulation around and exposing the integrated circuit die and the lead; and forming a planar interconnect between the integrated circuit die and the lead with the planar interconnect on the first encapsulation.

Abstract: A method for providing hermetic sealing within a silicon-insulator composite wafer for manufacturing a hermetically sealed structure, comprising the steps of: patterning a first silicon wafer to have one or more recesses that extend at least partially through the first silicon wafer; filling said recesses with an insulator material able to be anodically bonded to silicon to form a first composite wafer having a plurality of silicon-insulator interfaces and a first contacting surface consisting of insulator material; and using an anodic bonding technique on the first contacting surface and an opposing second contacting surface to create hermetic sealing between the silicon-insulator interfaces, wherein the second contacting surface consists of silicon.

Abstract: The present invention relates to highly functional composite nanoparticles including a support body formed of nanoparticles and first phase nanoparticles which are condensed on the surfaces of the support body particles after being evaporated through a physical vapor deposition process, and to a method for producing same. According to the present invention, a physical vapor deposition process is used instead of a wet process so as to produce eco-friendly composite nanoparticles that do not emit hazardous chemicals while having high economic feasibility and process reproducibility.

Abstract: A method for preparing an electrolyte separator for an electrochemical device is described. The method includes the step of applying a beta?-alumina coating composition, or a precursor thereof, to a porous substrate, by an atmospheric, thermal spray technique. An electrochemical device is also described. Some of these devices include an anode, a cathode, and an electrolyte separator disposed between the anode and the cathode. The separator includes a thermally-sprayed layer of beta?-alumina, disposed on a porous substrate. The electrochemical device can be used as an energy storage system, or for other types of end uses.

Abstract: A method for producing a transparent and conductive metal oxide layer on a substrate, includes atomizing at least one component of the metal oxide layer by highly ionized, high power pulsed magnetron sputtering to condense on the substrate. The pulses of the magnetron have a peak power density of more than 1.5 kW/cm2, the pulses of the magnetron have a duration of ?200 ?s, and the average increase in current density during ignition of the plasma within an interval, which is ?0.025 ms, is at least 106 A/(ms cm2).

Abstract: A sputtering target including a sintered body including In, Ga and Mg, the sintered body including one or more compounds selected from a compound represented by In2O3, a compound represented by In(GaMg)O4, a compound represented by Ga2MgO4 and a compound represented by In2MgO4, and having an atomic ratio In/(In+Ga+Mg) of 0.5 or more and 0.9999 or less and an atomic ratio (Ga+Mg)/(In+Ga+Mg) of 0.0001 or more and 0.5 or less.

Abstract: A method of forming an array of aligned, uniform-length carbon nanotubes on a planar surface of a substrate employing a composite catalyst layer of iron and cobalt. The carbon nanotubes have visible length and are useful for producing spun threads of carbon nanotubes having improved spinability and mechanical and electrical properties.

Abstract: A mold base of an embodiment is a mold base for use in manufacture of a mold that has a porous alumina layer over its surface, including: a base; and an aluminum alloy layer provided on the base, wherein the aluminum alloy layer contains aluminum, a non-aluminum metal element, and nitrogen. The aluminum alloy layer of the mold base of an embodiment of the present invention has high specularity.

Abstract: A method of depositing a layer of a material on a substrate is described. The method includes igniting a plasma of a sputter target for material deposition while the substrate is not exposed to the plasma, maintaining the plasma at least until exposure of the substrate to the plasma for deposition of the material on the substrate, exposing the substrate to the plasma by moving at least one of the plasma and the substrate, and depositing the material on the substrate, wherein the substrate is positioned for a static deposition process.

Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.

Abstract: An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film forming apparatus includes a target disposed on a top surface side of a substrate and having a sputtering surface defining a sharp angle to the top surface of the substrate, a transfer table that transfers the substrate in a predetermined direction, and an ion source disposed on the top surface side of the substrate in such a way that an ion beam is irradiated on the sputtering surface of the target. An ion beam reflected at the sputtering surface is irradiated on a sputtering film formed on the substrate.

Abstract: Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.

Abstract: A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 ?m.

Abstract: A coated device comprising a body, a coating on at least a portion of a surface of the body, wherein the coating comprises, a terminal layer, and at least one underlayer positioned between the terminal layer and the body, the underlayer comprising a hardness of greater than 61 HRc, wherein prior to the addition of the terminal layer, at least one of the body and the underlayer is polished to a surface roughness of less than or equal to 1.0 micrometer Ra.

Abstract: According to one embodiment, a perpendicular magnetic recording layer comprises a granular film type recording layer and a continuous film type recording layer. The granular film type recording layer comprises a first granular film type recording layer in which magnetic crystal grains in a film plane has an average crystal grain diameter of 3 to 7 nm, and a second granular film type recording layer including magnetic crystal grains having an in plane average crystal grain diameter larger than that of the magnetic crystal grains of the first granular film type recording layer.

Abstract: According to the invention there is a method of depositing SiO2 onto a substrate by pulsed DC reactive sputtering which uses a sputtering gas mixture consisting essentially of oxygen and krypton.

Abstract: The invention describes two methods for manufacturing metal dichalcogenide materials. The invention also includes a coated dichalcogenide substrate.

Abstract: Disclosed is a thin film solar cell including a substrate, a first electrode, a light absorbing layer, a buffer layer, a window layer, and a second electrode, wherein a compound layer of MxSy or MxSey (here, M is metal, and x and y each are a natural number) is present in an interface between the first electrode and the light absorbing layer, the thickness of the compound layer of MxSy or MxSey being 150 nm or less.

Abstract: A plasma processing method of the present disclosure includes attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material.

Abstract: In a method for forming a metal fluoride film, a metal fluoride film is formed on a substrate by sputtering using a metal target and a mixed gas containing O2 gas and a reactive gas being a fluorocarbon gas.

Abstract: A vacuum film formation method for forming at least one inorganic layer on a support, which comprise transporting a support of which the area of the surface to be coated with an inorganic layer formed thereon is a (unit: cm2) into a first vacuum tank having a capacity of at most 100a (unit: cm3) under atmospheric pressure, degassing the first vacuum tank into a vacuum, transporting the support from the first vacuum tank to a second vacuum tank while the vacuum condition is kept as such, and forming at least one inorganic layer on the support in the second vacuum tank.

Abstract: A proton conductor includes an electrolytic layer having first and second main surfaces; and a plurality of catalyst particles. The first main surface of the electrolytic layer includes a flat portion and a plurality of recessed portions. The plurality of catalyst particles are respectively located in the plurality of recessed portions. The flat portion of the first main surface and parts of surfaces of the plurality of catalyst particles exposed from the plurality of recessed portions form a third main surface. The electrolytic layer is formed of a single crystal of a perovskite-type oxide having a proton conductivity. The catalyst particles are formed of a single crystal of a noble metal material. The perovskite-type oxide of the electrolytic layer) has a crystal orientation that matches a crystal orientation of the noble metal material of the plurality of catalyst particles.

Abstract: A hard mask is provided which, while having a film density to demonstrate etching resistance, is low in film stress. The hard mask HD of this invention, which is provided to restrict the range of processing to the surface of a to-be-processed object W at the time of performing a predetermined processing to the to-be-processed object, is constituted by a titanium nitride film. This titanium nitride film is made into a two-layer structure. A lower-side layer L1 has a film thickness h1 within a range of 5 to 50% of the total film thickness ht of the hard mask, and also has a film density within a range of 3.5 to 4.7 g/cm3. An upper-side layer has a film density within a range of 4.8 to 5.3 g/cm3.

Abstract: The subject of the invention is a process for obtaining a substrate coated on at least part of its surface with at least one film of oxide of a metal M the physical thickness of which is 30 nm or less, said oxide film not being part of a multilayer comprising at least one silver film, said process comprising the following steps: at least one intermediate film of a material chosen from the metal M, a nitride of the metal M, a carbide of the metal M and an oxygen-substoichiometric oxide of the metal M is deposited by sputtering, said intermediate film not being deposited above or beneath a titanium-oxide-based film, the physical thickness of said intermediate film being 30 nm or less; and at least part of the surface of said intermediate film is oxidized using a heat treatment, during which said intermediate film is in direct contact with an oxidizing atmosphere, especially air, the temperature of said substrate during said heat treatment not exceeding 150° C.

Abstract: A photosensitive resin composition for a color filter includes (A) an acrylic-based binder resin including a structural unit represented by the following Chemical Formula 1, wherein the definitions of R1, R2, R3 and R4 are the same as set forth in specification; (B) an acrylic-based photopolymerizable monomer; (C) a photopolymerization initiator; (D) a colorant; and (E) a solvent.

Abstract: A tablet for ion plating enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell, and a noduleless film-formation not generating splash, an oxide sintered body most suitable for obtaining the same, and a production method thereof. A tablet for ion plating obtained by processing an oxide sintered body includes indium and cerium as oxides, and having a cerium content of 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an In2O3 phase of a bixbyite structure as a main crystal phase, has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 ?m, as a second phase. The oxide sintered body is produced by (a) mixing raw material powder consisting of indium oxide powder with an average particle diameter of equal to or smaller than 1.

Abstract: A technique capable of forming an oxide semiconductor target with a high quality in a low cost is provided. In a step of manufacturing zinc tin oxide (ZTO target) used in manufacturing an oxide semiconductor forming a channel layer of a thin-film transistor, by purposely adding the group IV element (C, Si, or Ge) or the group V element (N, P, or As) to a raw material, excessive carriers caused by the group III element (Al) mixed in the step of manufacturing the ZTO target are suppressed, and a thin-film transistor having good current (Id)-voltage (Vg) characteristics is achieved.

Abstract: A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-shaped structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film and thereby growing a plurality of nano coral-shaped structures on the petal-shaped structure. Therefore, the composite field emission source with high strength and nano coral-shaped structures can be obtained, whereby improving the effect and life of electric field emission.

Abstract: A touch panel includes a first substrate; a mask layer formed on the first substrate, and on a marginal region thereof; a first high density conductive layer covering the mask layer and the first substrate. An adaptive method for manufacturing the touch panel incorporating a HiPIMS-assisted-DC sputtering process is provided as well.

Abstract: A stack includes a substrate and a magnetic recording layer. Disposed between the substrate and magnetic recording layer is an MgO—Ti(ON) layer.

Abstract: A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO3) and the other of which is made of aluminum oxide (Al2O3). Then, transport and load a substrate into the vacuum chamber. Next, introduce a chosen sputtering gas into this chamber. Thereafter, perform sputtering of both the targets at a time to thereby form a lanthanoid aluminate film on the substrate surface. This film is well adaptable for use as ultra-thin high dielectric constant (high-k) gate dielectrics in highly miniaturized metal oxide semiconductor (MOS) transistors.

Abstract: This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S403) of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in a process chamber, a voltage application step (step S407) of applying a voltage to the target after the first gas introduction step, and a second gas introduction step (step S405) of introducing a process gas from a second gas introduction port formed outside the sputtering space.

Abstract: An exemplary embodiment of the present invention relates to a conductive structure body that comprises a darkening pattern layer having AlOxNy, and a method for manufacturing the same. The conductive structure body according to the exemplary embodiment of the present invention may prevent reflection by a conductive pattern layer without affecting conductivity of the conductive pattern layer, and improve a concealing property of the conductive pattern layer by improving absorbance. Accordingly, a display panel having improved visibility may be developed by using the conductive structure body according to the exemplary embodiment of the present invention.

Abstract: A method for manufacturing a surgical implant. A metal layer is deposited onto a polyaryletherketone (PAEK) substrate by generating a series of pulses using a high power impulse magnetron sputtering process. Each pulse is applied in a series of micro pulse steps comprising (i) micro pulse on steps ranging from 10 ?s to 100 ?s and (ii) micro pulse off steps ranging from 5 ?s as to 400 ?s; at a repetition frequency ranging from 50-2000 Hz with 2 micropulses to 20 micropulses per repetition, a total pulse on time ranging from 25 ?s to 800 ?s for 5 minutes to 300 minutes at averaged power ranging from 200 W to 3000 W. The series of pulses are performed in a unipolar mode or a bipolar mode.

Abstract: System and method of insulating film deposition. A sputter deposition chamber comprises a pair of targets made of the same insulating material. Each target is applied with a high frequency power signal concurrently. A phase adjusting unit is used to adjust the phase difference between the high frequency power signals supplied to the pair of targets to a predetermined value, thereby improving the in-plane thickness distribution of a resultant film. The predetermined value is target material specific.

Abstract: The present invention generally relates to a semiconductor film and a method of depositing the semiconductor film. The semiconductor film comprises oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin. Additionally, the semiconductor film may be doped. The semiconductor film may be deposited by applying an electrical bias to a sputtering target comprising the one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin, and introducing a nitrogen containing gas and an oxygen containing gas. The sputtering target may optionally be doped. The semiconductor film has a mobility greater than amorphous silicon. After annealing, the semiconductor film has a mobility greater than polysilicon.

Abstract: A method of making a coated article includes providing a substrate; forming a nickel layer on the substrate by magnetron sputtering; forming a titanium layer on the nickel layer by magnetron sputtering; and applying a thermal oxidative treatment to the nickel and titanium layered substrate to form a catalyst layer and a self-cleaning layer. The self-cleaning layer includes metallic titanium, metallic nickel, nickel oxide and titanium dioxide.

Abstract: The present invention concerns a method for depositing mixed crystal layers with at least two different metals on a substrate by means of PVD methods. To provide a method of depositing mixed crystal layers with at least two different metals on a substrate by means of PVD methods, which gives mixed crystal layers which are as free as possible of macroparticles (droplets) and which have a proportion as high as possible of a desired crystalline phase and which are highly crystalline, it is proposed according to the invention that deposition of the mixed crystal layer is effected with simultaneous application of i) the cathode sputtering method of dual magnetron sputtering or high power impulse magnetron sputtering and ii) arc vapour deposition.

Abstract: A turbine engine, an engine structure, and a method of forming an engine structure are provided herein. In an embodiment, an engine structure includes a metal substrate, a thermal barrier coating layer, and a metal silicate protective layer. The thermal barrier coating layer overlies the metal substrate, and the thermal barrier coating layer has columnar grains with gaps defined between the columnar grains. The metal silicate protective layer is formed over the thermal barrier coating layer, and the metal silicate protective layer covers the columnar grains and the gaps between the columnar grains.

Abstract: Disclosed is a coating material for aluminum die casting and a method for coating the same, the coating material including: a CrN adhesion layer formed on a surface of a base material; a TrAlN/CrN support layer formed on a surface of the CrN adhesion layer; and a TiAl(CrSi)VCN functional layer formed on a surface of the TiAlN/CrN support layer. The present coating material solves the hot stamping and sticking problem of a conventional aluminum die casting mold and the like, enhances thermal resistance, and further has enhanced thermal resistance, high-temperature wear resistance, sticking resistance and thermal impact resistance compared to that of a conventional coating material.

Abstract: Disclosed is a method of manufacturing an organic-inorganic composite film. The method includes co-sputtering an inorganic target and a fluorine-containing organic polymer target, thereby simultaneously depositing atoms from the inorganic target and atoms from the fluorine-containing organic polymer target on a substrate. As such, an organic-inorganic composite film is obtained. The organic-inorganic composite film includes a homogeneous, amorphous, and nonporous material composed of carbon, fluorine, oxygen and/or nitrogen, and M. M can be silicon, titanium, aluminum, chromium, or combinations thereof.

Abstract: A process for coating a part comprises the steps of providing a chamber which is electrically connected as an anode, placing the part to be coated in the chamber, providing a cathode formed from a coating material to be deposited and platinum, and applying a current to the anode and the cathode to deposit the coating material and the platinum on the part.

Abstract: Micro-fluid ejection devices, methods for making micro-fluid ejection heads, and micro-fluid ejection heads, including a micro-fluid ejection head. One such micro-fluid ejection head has relatively high resistance thin film heaters adjacent to a substrate. The thin film material comprises silicon, metal, and carbon (SiMC wherein M is a metal). Each thin film heater has a sheet resistance ranging from about 100 to about 600 ohms per square and a thickness ranging from about 100 to about 800 Angstroms.