Metal Compound Containing Patents (Class 252/518.1)
  • Publication number: 20120145315
    Abstract: A method for forming a body comprising a mixture of a matrix and conductive particles, whereby the conductive particles are formed into aligned conductive pathways in an alignment step by applying an electric field between alignment electrodes and thereafter stabilizing the mixture wherein the conductive particles have a low aspect ratio; and a polymeric composition and method for producing such composition which is curable by UV light to an anisotropic electrically conductive polymer layer, comprising i) providing a non-conductive matrix of a flowable polymer composition having inherent photocurability, ii) adding to matrix conductive particles having low aspect ratio in an amount to allow the concentration of the conductive particles to be maintained at a level lower than the percolation threshold, and iii) placing the formed composition in a receptacle where exposure to UV light is prevented, and a method for establishing an anisotropic electrically conductive, optionally thermally conductive
    Type: Application
    Filed: December 15, 2011
    Publication date: June 14, 2012
    Applicant: CONDALIGN AS
    Inventors: Matti KNAAPILA, Mark BUCHANAN, Geir HELGESEN
  • Patent number: 8197717
    Abstract: The present invention relates to a metal ink that comprises metal nano particles that are capped by a capping material; and an organic solvent that has a solubility parameter for swelling the capping material. In addition, the present invention relates to a method for producing a metal wire, which comprises the steps of jetting the metal ink by using an ink-jet nozzle, drying the metal ink, and firing the metal ink.
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: June 12, 2012
    Assignee: LG Chem, Ltd.
    Inventors: Jung-Ho Park, Joon-Hyung Kim
  • Patent number: 8197719
    Abstract: Provided herein are electroactive agglomerated particles, which comprise nanoparticles of a first electroactive material and nanoparticles of a second electroactive materials, and processes of preparation thereof.
    Type: Grant
    Filed: October 16, 2007
    Date of Patent: June 12, 2012
    Assignee: American Lithium Energy Corp.
    Inventors: Jiang Fan, Robert M. Spotnitz
  • Patent number: 8197720
    Abstract: Disclosed are core/shell type semiconductor nanoparticles exhibiting a sufficient emission intensity without causing a blink phenomenon (blinking). The core/shell-type semiconductor nanoparticles have an average particle size of from 2 to 50 nm and comprise an intermediate layer between a core portion and a shell portion, wherein band gap widths of bulk crystals which have the same compositions as those of the core portion, the intermediate portion and the shell portion, respectively, are in the order of: core portion<shell portion<intermediate layer.
    Type: Grant
    Filed: January 18, 2008
    Date of Patent: June 12, 2012
    Assignee: Konica Minolta Medical & Graphic, Inc.
    Inventors: Kazuyoshi Goan, Kazuya Tsukada, Naoko Furusawa
  • Publication number: 20120142536
    Abstract: The present invention concerns the enhancement of critical current densities in cuprate superconductors. Such enhancement of critical current densities include using wave function symmetry and restricting movement of Abrikosov (A) vortices, Josephson (J) vortices, or Abrikosov-Josephson (A-J) vortices by using the half integer vortices associated with d-wave symmetry present in the grain boundary.
    Type: Application
    Filed: June 8, 2011
    Publication date: June 7, 2012
    Applicant: SOLAR-TECTIC, LLC
    Inventors: Praveen Chaudhari, Karin Chaudhari, Ashok Chaudhari, Pia Chaudhari
  • Publication number: 20120134914
    Abstract: Disclosed is a cathode active material and a method to produce the same at low cost. The cathode powder comprises modified LiCoO2, and possibly a second phase which is LiM?O2 where M? is Mn, Ni, Co with a stoichiometric ratio Ni:Mn?1. The modified LiCoO2 is Ni and Mn bearing and has regions of low and high manganese content, where regions with high manganese content are located in islands on the surface. The cathode material has high cycling stability, a very high rate performance and good high temperature storage properties.
    Type: Application
    Filed: December 1, 2011
    Publication date: May 31, 2012
    Inventors: Jens Martin Paulsen, Hyunjoo JE, Maxime Blangero
  • Patent number: 8189636
    Abstract: Detecting electrical overstress events in electronic circuitry such as optical emitters. In one example embodiment, a laser includes an active area and a contact region in electrical communication with the active area. A portion of the contact region is configured to manifest a change in a visual attribute of the portion in response to exposure of the portion to an electrical overstress event.
    Type: Grant
    Filed: September 27, 2010
    Date of Patent: May 29, 2012
    Assignee: Finisar Corporation
    Inventor: David Todd Mathes
  • Patent number: 8187710
    Abstract: There are disclosed insulated ultrafine powder comprising electroconductive ultrafine powder which is in the form of sphere, spheroid or acicular each having a minor axis in the range of 1 to 100 nm and an insulating film applied thereto; a process for producing the same which is capable of covering the surfaces of the insulated ultrafine powder with the insulating film having a thickness in the range of 0.3 to 100 nm without causing any clearance or vacancy; and a resin composite material which uses the same. A high dielectric constant of the material is assured by adding a small amount of insulated ultrafine powder wherein an insulating film is applied to the electroconductive ultrafine powder, while maintaining the processability and moldability that are the characteristics inherent in a resin material.
    Type: Grant
    Filed: January 19, 2011
    Date of Patent: May 29, 2012
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Takahiro Matsumoto, Toshiaki Yamada, Hirotaka Tsuruya
  • Patent number: 8187502
    Abstract: Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid for formation of a nanotube film includes a liquid medium containing a controlled concentration of purified nanotubes, wherein the controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity, and wherein the spin-coatable liquid comprises less than 1×1018 atoms/cm3 of metal impurities. The spin-coatable liquid is substantially free of particle impurities having a diameter of greater than about 500 nm.
    Type: Grant
    Filed: July 25, 2007
    Date of Patent: May 29, 2012
    Assignee: Nantero Inc.
    Inventors: Rahul Sen, Ramesh Sivarajan, Thomas Rueckes, Brent M. Segal
  • Publication number: 20120128996
    Abstract: The present invention relates to a metal nanobelt and a method of manufacturing the same, and a conductive ink composition and a conductive film including the same. The metal nanobelt can be easily manufactured at a normal temperature and pressure without requiring the application of high temperature and pressure, and also can be used to form a conductive film or conductive pattern that exhibits excellent conductivity if the conductive ink composition including the same is printed onto a substrate before a heat treatment or a drying process is carried out at low temperature. Therefore, the metal nanobelt and the conductive ink composition may be applied very appropriately for the formation of conductive patterns or conductive films for semiconductor devices, displays, solar cells in environments requiring low temperature heating. The metal nanobelt has a length of 500 nm or more, a length/width ratio of 10 or more, and a width/thickness ratio of 3 or more.
    Type: Application
    Filed: September 10, 2009
    Publication date: May 24, 2012
    Applicant: LG Chem Ltd
    Inventors: Won-Jong Kwon, Jae-Hong Kim, Sun-Mi Jin, Sang-Uck Lee, Young-Soo Lim
  • Publication number: 20120129322
    Abstract: A composite material includes at least two components, wherein at least one component is present in the form of nanoparticles, which consist of at least three metals and at least one non-metal and the diameter of which is less than one micrometre, preferably less than 200 nm. The novel composite material is particularly well suited for the production of photoactive layers.
    Type: Application
    Filed: May 27, 2010
    Publication date: May 24, 2012
    Applicant: ISOVOLTAIC AG
    Inventors: Dieter Meissner, Thomas Rath, Eugen Maier, Gregor Trimmel, Albert Plessing, Franz Stelzer
  • Patent number: 8182721
    Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: May 22, 2012
    Assignee: Nanosolar, Inc.
    Inventors: Dong Yu, Jacqueline Fidanza, Brian M. Sager
  • Patent number: 8182720
    Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: May 22, 2012
    Assignee: Nanosolar, Inc.
    Inventors: Dong Yu, Jacqueline Fidanza, Brian M. Sager
  • Patent number: 8183174
    Abstract: A method for preparing a metal-doped ruthenium oxide material by heating a mixture of a doping metal and a source of ruthenium under an inert atmosphere. In some embodiments, the doping metal is in the form of iridium black or lead powder, and the source of ruthenium is a powdered ruthenium oxide. An iridium-doped or lead-doped ruthenium oxide material can perform as an oxygen evolution catalyst and can be fabricated into electrodes for electrolysis cells.
    Type: Grant
    Filed: October 15, 2009
    Date of Patent: May 22, 2012
    Assignee: California Institute of Technology
    Inventors: Thomas I. Valdez, Sekharipuram R. Narayanan
  • Publication number: 20120118386
    Abstract: A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.
    Type: Application
    Filed: May 10, 2011
    Publication date: May 17, 2012
    Inventors: Han-Yi CHEN, Chia-Hsiang Chen, Huan-Chieh Su, Kuo-Liang Liu, Tri-Rung Yew
  • Patent number: 8178009
    Abstract: There is provided a slurry for a secondary battery electrode and an electrode for a secondary battery that produce satisfactory charge-discharge characteristics for secondary batteries, as well as a secondary battery that exhibits satisfactory charge-discharge characteristics. The invention provides a slurry for a secondary battery electrode comprising an electrode active material and an ambient temperature molten salt composed of a cation component and an anion component, an electrode for a secondary battery wherein an electrode active material layer is formed by coating the slurry for a secondary battery electrode onto a current collector, a process for production of an electrode for a secondary battery whereby the slurry for a secondary battery electrode is coated onto a current collector metal foil to form a coated film, and a secondary battery comprising a positive electrode and/or negative electrode fabricated using the electrode for a secondary battery, and an electrolyte.
    Type: Grant
    Filed: October 25, 2007
    Date of Patent: May 15, 2012
    Assignee: Sumitomo Bakelite Co., Ltd.
    Inventor: Tsuyoshi Watanabe
  • Patent number: 8178008
    Abstract: A semiconductor material for radiation absorption and detection comprising a composition of stoichiometry Li(M12+, M22+, M32+, . . . )(G1V, G2V, G3V, . . . ) and exhibiting an antifluorite-type order, where Li=1, (M12++M22++M32++ . . . )=1, and (G1V+G2V+G3V+ . . . )=1. The material provides two useful characteristics: [1] a high Li-site density, which when enriched in 6Li, produces exceptional neutron-absorbing capabilities and [2] a semiconducting band-gap for the efficient conversion of absorbed photon and neutron energies into electrical currents. These characteristics can be exploited in applications for power generation or the spectroscopic detection of gamma and neutron radiation. The material can be tailored so as to detect only gamma photons, detect only neutron particles, or simultaneously detect gamma photons and neutron particles.
    Type: Grant
    Filed: September 17, 2008
    Date of Patent: May 15, 2012
    Assignee: General Electric Company
    Inventors: Brent Allen Clothier, Adrian Ivan, Daniel Bruno McDevitt
  • Patent number: 8173050
    Abstract: A conductive pattern formation ink which can be stably ejected in the form of liquid droplets and form a conductive pattern having high reliability, a conductive pattern having high reliability, and a wiring substrate provided with the conductive pattern and having high reliability are provided. The conductive pattern formation ink is used for forming a conductive pattern by ejecting the ink in the form of liquid droplets on a surface of a ceramic molded body using a liquid droplet ejecting method, the ceramic molded body being made of a material containing ceramic particles and a binder. The ink contains a water-based dispersion medium, and metal particles dispersed in the water-based dispersion medium, wherein the water-based dispersion medium contains oxygen molecules and nitrogen molecules, and wherein when the water-based dispersion medium is analyzed using a gas chromatography method, a total amount of the oxygen and nitrogen molecules contained in the water-based dispersion medium is 12 ppm or less.
    Type: Grant
    Filed: December 10, 2008
    Date of Patent: May 8, 2012
    Assignee: Seiko Epson Corporation
    Inventors: Naoyuki Toyoda, Toshiyuki Kobayashi, Sachiko Endo, Noboru Uehara, Akihiko Tsunoya
  • Patent number: 8173051
    Abstract: There are disclosed insulated ultrafine powder comprising electroconductive ultrafine powder which is in the form of sphere, spheroid or acicular each having a minor axis in the range of 1 to 100 nm and an insulating film applied thereto; a process for producing the same which is capable of covering the surfaces of the insulated ultrafine powder with the insulating film having a thickness in the range of 0.3 to 100 nm without causing any clearance or vacancy; and a resin composite material which uses the same. A high dielectric constant of the material is assured by adding a small amount of insulated ultrafine powder wherein an insulating film is applied to the electroconductive ultrafine powder, while maintaining the processability and moldability that are the characteristics inherent in a resin material.
    Type: Grant
    Filed: September 11, 2009
    Date of Patent: May 8, 2012
    Assignee: Mitsubishi Gas Chemical Co., Inc.
    Inventors: Takahiro Matsumoto, Toshiaki Yamada, Hirotaka Tsuruya
  • Publication number: 20120104325
    Abstract: Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, imaging devices, phase change layers, and sensor devices.
    Type: Application
    Filed: April 23, 2010
    Publication date: May 3, 2012
    Applicant: THE UNIVERSITY OF CHICAGO
    Inventors: Dmitri V. Talapin, Maksym V. Kovalenko, Jong-Soo Lee, Chengyang Jiang
  • Publication number: 20120104930
    Abstract: The invention relates to an electron emission material for use in fluorescent lamps that releases a significantly reduced amount of decomposition material, predominantly CO2, during in-lamp heat-treatment. Consequently, there is a significant reduction in the amount of electrode decomposition-related contaminants in the lamp. In addition, the emission material of the invention requires a much lower temperature in-lamp heat-treatment during manufacturing than that of conventional lamps of the same type. The invention, while described herein for use primarily with fluorescent lamps, has broader application to any device where the primary means of electron emission is of the thermionic type.
    Type: Application
    Filed: November 3, 2010
    Publication date: May 3, 2012
    Inventors: Zoltan Somogyvari, Laszlo Balazs, Csaba Horvath
  • Patent number: 8168089
    Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: May 1, 2012
    Assignee: Nanosolar, Inc.
    Inventors: Dong Yu, Jacqueline Fidanza, Brian M. Sager
  • Patent number: 8163198
    Abstract: A process for producing a lithium-containing composite oxide having a large volume capacity density, high safety, excellent durability for charge/discharge cycles, and excellent low temperature characteristics. An oxide of general formula LipNxMyOzFa (wherein N is at least one of Co, Mn or Ni, M is at least one of Al, an alkali earth metal element, a transition metal element other than N, 0.9?p?1.2, 0.97?x?1.00, 0?y?0.03, 1.9?z?2.2, x+y=1 and 0?a?0.02) can be produced.
    Type: Grant
    Filed: November 15, 2007
    Date of Patent: April 24, 2012
    Assignee: AGC Seimi Chemical Co., Ltd.
    Inventors: Naoshi Saito, Takeshi Kawasato, Tokumitsu Kato, Kazushige Horichi
  • Publication number: 20120091402
    Abstract: The present invention involves synthesizing conducting polymer nanofibers by mixing an oxidant solution with a monomer solution, which includes a monomer and an oligomer of the monomer that is used as an initiator. The oxidant solution includes an oxidizing agent, or oxidant, such as ferric chloride to oxidize the monomer, the oligomer, or both, and begin polymerization. By including an initiator in the form of the oligomer, which may have a lower oxidation potential than the monomer, the rate of polymerization is accelerated, resulting in the nanofibrous morphology. Therefore, the conducting polymer nanofibers may be synthesized without the use of surfactants, hard templates, or seeds, resulting in a simplified and accelerated polymerization process, which enhances homogenous nucleation of the conducting polymer nanofibers.
    Type: Application
    Filed: December 22, 2011
    Publication date: April 19, 2012
    Applicant: The Regents of the University of California
    Inventors: Richard B. Kaner, Koo Shin, Henry Hiep D. Tran
  • Publication number: 20120091404
    Abstract: The inventors demonstrate herein that various Zintl compounds can be useful as thermoelectric materials for a variety of applications. Specifically, the utility of Ca3AlSb3, Ca5Al2Sb6, Ca5In2Sb6, Ca5Ga2Sb6, is described herein. Carrier concentration control via doping has also been demonstrated, resulting in considerably improved thermoelectric performance in the various systems described herein.
    Type: Application
    Filed: October 19, 2011
    Publication date: April 19, 2012
    Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY
    Inventors: G. Jeffrey Snyder, Eric Toberer, Alex Zevalkink
  • Patent number: 8153305
    Abstract: The invention relates to a solid electrolyte, to a process for its manufacture and also to devices comprising it. The electrolyte of the invention is an amorphous solid of formula SivOwCxHyLiz, in which v, w, x, y and z are atomic percentages with 0?v?40, 5?w?50, x>12, 10?y?40, 1?z?70, and 95%?v+w+x+y+z?100%. The electrolyte of the invention finds application in the field of electronics and microbatteries in particular.
    Type: Grant
    Filed: May 7, 2008
    Date of Patent: April 10, 2012
    Assignees: Commissariat a l'Energie Atomique, St Microelectronics SA
    Inventors: Steve Martin, Raphaël Salot, Pascal Faucherand, Sami Oukassi, Lucie Jodin
  • Patent number: 8153033
    Abstract: An amorphous transparent conductive film containing as a main component a six oxygen-coordinated metal oxide, and satisfying, in a radial distribution function (RDF) obtained by an X-ray scattering measurement, a relationship of A/B>1, providing that the maximum value of RDF at an interatomic distance of from 0.30 nm to 0.36 nm is A and the maximum value of RDF at an interatomic distance of from 0.36 nm to 0.42 nm is B.
    Type: Grant
    Filed: March 7, 2006
    Date of Patent: April 10, 2012
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Yukio Shimane, Kazuyoshi Inoue, Masato Matsubara, Nobuo Tanaka, Tokie Tanaka, legal representative, Shigekazu Tomai, Koki Yano, Shigeo Matsuzaki
  • Patent number: 8153031
    Abstract: An oxide sintered body including an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and including a compound shown by Ga2In6Sn2O16 or (Ga,In)2O3.
    Type: Grant
    Filed: November 30, 2007
    Date of Patent: April 10, 2012
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Kazuyoshi Inoue
  • Publication number: 20120080649
    Abstract: A process for preparing transition metal particles with a gradient in composition from the core of the particle to the outer layers. In particular, the process involves contacting a first transition metal solution with a second transition metal solution to form a transition metal source solution under specific process conditions. The transition metal particles with desired composition gradients are precipitated from the transition metal source solution. The transition metal particles may be combined with metals such as lithium to form cathode active metal oxides.
    Type: Application
    Filed: September 30, 2010
    Publication date: April 5, 2012
    Inventors: Gary M. Koenig, JR., Ilias Belharouak, Khalil Amine, Haixia Deng
  • Publication number: 20120077082
    Abstract: Electrodes for lithium batteries are coated via an atomic layer deposition process. The coatings can be applied to the assembled electrodes, or in some cases to particles of electrode material prior to assembling the particles into an electrode. The coatings can be as thin as 2 ?ngstroms thick. The coating provides for a stable electrode. Batteries containing the electrodes tend to exhibit high cycling capacities.
    Type: Application
    Filed: June 13, 2011
    Publication date: March 29, 2012
    Inventors: Lee Se-Hee, Steven M. George, Andrew S. Cavanagh, Jung Yoon Seok, Anne C. Dillon
  • Patent number: 8142688
    Abstract: The present disclosure provides a conductive pattern formed body with a conductive pattern formed efficiently and highly precisely in a simple process, a conductivity variable laminated body used for formation of the conductive pattern, and the like. The disclosure provides a conductivity variable composition characterized by containing insulating particle including a conductive inorganic material and an organic material adhered on the circumference of the conductive inorganic material, and a photocatalyst.
    Type: Grant
    Filed: March 28, 2006
    Date of Patent: March 27, 2012
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Yoshihiro Kobayashi, Kiyoshi Itoh
  • Publication number: 20120069531
    Abstract: A conducting paste and method of forming the paste for device level interconnection. The conducting paste contains metal loading in the range 80-95% that is useful for making five micron device level interconnects. The conducting paste is made by mixing two different conducting pastes, each paste maintaining its micro level individual rich region in the mixed paste even after final curing. One paste contains at least one low melting point alloy and the other paste contains noble metal fillers such as gold or silver flakes. In general, average flake size below five micron is suitable for five micron interconnects. However, 1 micron or smaller silver flakes and an LMP mixture is preferred for five micron interconnects. The amount of LMP based paste in the final mixture is preferably 20-50% by weight. The nano micro paste embodiment shows good electrical yield (81%) and low contact resistance.
    Type: Application
    Filed: September 17, 2010
    Publication date: March 22, 2012
    Applicant: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
    Inventors: Rabindra N. Das, Roy H. Magnuson, Mark D. Poliks, Voya R. Markovich
  • Publication number: 20120068070
    Abstract: A pyroelectric material is made of lithium tantalate treated to an extent that a bulk resistivity is in a range of less than 2e+14?*cm, preferably less than 5e+12?*cm, but more than a lower threshold is obtained.
    Type: Application
    Filed: January 7, 2010
    Publication date: March 22, 2012
    Applicant: EXCELITAS TECHNOLOGIES GMBH & CO. KG
    Inventors: Fred Plotz, Gerhard Knaup, Henrik Ernst
  • Publication number: 20120064719
    Abstract: A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non- metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.
    Type: Application
    Filed: March 17, 2010
    Publication date: March 15, 2012
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Jorge A. Lubguban, JR., Thomas M. Cameron, Chongying Xu, Weimin Li
  • Patent number: 8133413
    Abstract: This invention relates to a composition using a ruthenium oxide and/or a polynary ruthenium oxide as conducting components and using a Cu containing glass frit.
    Type: Grant
    Filed: April 17, 2009
    Date of Patent: March 13, 2012
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Keiichiro Hayakawa, Jerome David Smith, Yuko Ogata, Marc H. Labranche, Kenneth Warren Hang
  • Publication number: 20120052511
    Abstract: In one embodiment, an aerogel or xerogel includes column structures of a material having minor pores therein and major pores devoid of the material positioned between the column structures, where longitudinal axes of the major pores are substantially parallel to one another. In another embodiment, a method includes heating a sol including aerogel or xerogel precursor materials to cause gelation thereof to form an aerogel or xerogel and exposing the heated sol to an electric field, wherein the electric field causes orientation of a microstructure of the sol during gelation, which is retained by the aerogel or xerogel. In one approach, an aerogel has elongated pores extending between a material arranged in column structures having structural characteristics of being formed from a sol exposed to an electric field that causes orientation of a microstructure of the sol during gelation which is retained by the elongated pores of the aerogel.
    Type: Application
    Filed: July 11, 2011
    Publication date: March 1, 2012
    Applicant: LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
    Inventors: Marcus A. Worsley, Theodore F. Baumann, Joe H. Satcher, JR., Tammy Y. Olson, Joshua D. Kuntz, Klint A. Rose
  • Publication number: 20120052375
    Abstract: A positive electrode is disclosed for a non-aqueous electrolyte lithium rechargeable cell or battery. The electrode comprises a lithium containing material of the formula NayLixNizMn1-z-z?Mz?Od, wherein M is a metal cation, x+y>1, 0<z<0.5, 0?z?<0.5, y+x+1 is less than d, and the value of d depends on the proportions and average oxidation states of the metallic elements, Li, Na, Mn, Ni, and M, if present, such that the combined positive charge of the metallic elements is balanced by the number of oxygen anions, d. The inventive material preferably has a spinel or spinel-like component in its structure. The value of y preferably is less than about 0.2, and M comprises one or more metal cations selected preferably from one or more monovalent, divalent, trivalent or tetravalent cations, such as Mg2+, Co2+, Co3+, B3+, Ga3+, Fe2+, Fe3+, Al3+, and Ti4+.
    Type: Application
    Filed: August 25, 2010
    Publication date: March 1, 2012
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Christopher Johnson, Sun-Ho Kang
  • Patent number: 8123986
    Abstract: A plasma display device and a method of manufacturing a plasma display panel (PDP) are provided. The method includes applying onto a substrate a black matrix paste for forming a black matrix and an electrode paste for forming an electrode; laminating a dielectric material on the substrate; and firing the black matrix paste, the electrode paste, and the dielectric material at the same time. Therefore, it is possible to simplify the manufacture of a PDP by firing electrodes, black matrices, and a dielectric material at the same time. In addition, it is possible to reduce the probability of the generation of air bubbles by appropriately reducing the amount of glass frit in a paste. Moreover, it is possible to enhance the efficiency of driving a PDP and the reliability of a plasma display device.
    Type: Grant
    Filed: June 26, 2007
    Date of Patent: February 28, 2012
    Assignee: LG Electronics Inc.
    Inventors: Jung Sok Noh, Young Woo Seo, Chang Min Han
  • Patent number: 8119095
    Abstract: The present invention relates to a composite sintering materials using a carbon nanotube (including carbide nano particles, hereinafter the same) and a manufacturing method thereof, the method comprises the steps of: combining or generating carbon nanotubes in metal powers, a compacted product, or a sintered product; growing and alloying the carbon nanotubes by compacting or sintering the metal powers, the compacted product, or the sintered product; and strengthening the mechanical characteristics by repeatedly performing the sintering process and the combining process or the generating process of the carbon nanotubes.
    Type: Grant
    Filed: September 7, 2007
    Date of Patent: February 21, 2012
    Assignee: C & Tech Co., Ltd.
    Inventors: Sang-chul Ahn, Sun-hwa Yang, Hyeung-eun Ahn
  • Patent number: 8119040
    Abstract: A method for forming an embedded passive device module comprises depositing a first amount of an alkali silicate material, co-depositing an amount of embedded passive device material with the amount of alkali silicate material; and thermally processing the amount of alkali silicate material and the amount of embedded passive device material at a temperature sufficient to cure the amount of alkali silicate material and the amount of embedded passive device material and form a substantially moisture free substrate.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: February 21, 2012
    Assignee: Rockwell Collins, Inc.
    Inventors: Nathan P. Lower, Ross K. Wilcoxon, Alan P. Boone, Nathaniel P. Wyckoff, Brandon C. Hamilton
  • Publication number: 20120037855
    Abstract: An aluminum paste and a solar cell, the aluminum paste including aluminum powder; an organic vehicle; and antimony oxide, the antimony oxide being present in an amount of about 0.001 wt % to less than about 1.0 wt %, based on a total weight of the aluminum paste.
    Type: Application
    Filed: March 7, 2011
    Publication date: February 16, 2012
    Inventors: Byung Chul LEE, Dong Suk Kim, Jae Ho Kim, Jae Hwan Oh, Hyun Don Kim
  • Publication number: 20120037901
    Abstract: The present invention provides highly-stable oxide semiconductors which make it possible to provide devices having an excellent stability. The oxide semiconductor according to the present invention is an amorphous oxide semiconductor including at least one of indium (In), zinc (Zn), and Tin (Sn) and at least one of an alkaline metal or an alkaline earth metal having an ionic radius greater than that of gallium (Ga), and oxygen.
    Type: Application
    Filed: April 24, 2009
    Publication date: February 16, 2012
    Applicants: CAMBRIDGE ENTERPRISE LTD., PANASONIC CORPORATION
    Inventors: Kiyotaka Mori, Henning Sirringhaus, Kulbinder Kumar Banger, Rebecca Lorenz Peterson
  • Patent number: 8114309
    Abstract: A lithium-manganese composite oxide for a lithium ion battery having a good cycle property at high-temperature and battery property of high capacity is provided. A spinel type lithium-manganese composite oxide for a lithium ion battery represented by a general formula: Li1+xMn2-yMyO4 (wherein M is one or more elements selected from Al, Mg, Si, Ca, Ti, Cu, Ba, W and Pb, and, ?0.1?x?0.2, and 0.06?y?0.3), and when D10, D50 and D90 are defined as a particle size at which point the cumulative frequency of volume reaches 10%, 50% and 90% respectively, d10 is not less than 2 ?m and not more than 5 ?M, d50 is not less than 6 ?m and not more than 9 ?m, and d90 is not less than 12 ?m and not more than 15 ?M, and BET specific surface area thereof is greater than 1.0 m2/g and not more than 2.0 m2/g, and the tap density thereof is not less than 0.5 g/cm3 and less than 1.0 g/cm3.
    Type: Grant
    Filed: April 14, 2008
    Date of Patent: February 14, 2012
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Yoshio Kajiya, Hirohito Sato, Ryuichi Nagase
  • Patent number: 8115587
    Abstract: A ceramic main body 1 is composed of a (Mn,Ni)3O4- or (Mn,Co)3O4-based ceramic material. A first phase has a spinel structure. A second phase is formed of high-resistance plate crystals. The second phase is present in the first phase in a dispersed state. A heated pathway having a predetermined pattern is formed on a surface of the ceramic main body by the application of heat by laser irradiation. In the heated pathway, the second phase disappears and is crystallographically equivalent to the first phase. The plate crystals of the second phase precipitate at 800° C. or lower in the cooling substep during firing. The formation of the heated pathway facilitates the adjustment of the resistance of an NTC thermistor. Thereby, provided are an NTC thermistor ceramic with a resistance that can be easily adjusted to a lower value even after sintering, a method for producing the NTC thermistor ceramic, and an NTC thermistor.
    Type: Grant
    Filed: September 28, 2010
    Date of Patent: February 14, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Kiyohiro Koto, Makoto Kumatoriya
  • Patent number: 8105507
    Abstract: Nanocrystal-metal oxide-polymer composites and their methods of preparation are described. The composites comprises a number of nanocrystals within a metal oxide matrix, and an oligomer or polymer covalently bonded to organic reactive groups of the metal oxide matrix. The composites can be applied to a variety of electronic devices. The electronic devices constructed from the composites do not decrease in performance rapidly due to degradation and exhibit improved stability.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: January 31, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyo Sook Jang, Eun Joo Jang, Shin Ae Jun, Jung Eun Lim
  • Publication number: 20120021163
    Abstract: A semiconductor compound material, preferably a III-N-bulk crystal or a III-N-layer, is manufactured in a reactor by means of hydride vapour phase epitaxy (HVPE), wherein in a mixture of carrier gases a flow profile represented by local mass flow rates is formed in the reactor. The mixture can carry one or more reaction gases towards a substrate. Thereby, a concentration of hydrogen important for the reaction and deposition of reaction gases is adjusted at the substrate surface independently from the flow profile simultaneously formed in the reactor.
    Type: Application
    Filed: January 20, 2011
    Publication date: January 26, 2012
    Inventors: Gunnar LEIBIGER, Frank Habel, Stefan Eichler
  • Patent number: 8097186
    Abstract: A method is disclosed for producing a non-linear powder having microvaristor particles which have a non-linear current-voltage characteristic. The production steps includes mixing non-metallic particles with the microvaristor particles, thermally treating the non-metallic particles for decomposing them into electrically conductive particles and fusing the electrically conductive particles onto the microvaristor particles. Embodiments, among other things, relate to: breaking up agglomerates of the non-metallic particles during mixing; keeping the decomposition temperature below a sintering or calcination temperature of the microvaristor particles; and choosing micron-sized or nano-sized non-conductive particles for microvaristor decoration. The production method produces varistor powder with improved reproducibility of the non-linear electric current-voltage characterstic and with reduced switching fields (Es).
    Type: Grant
    Filed: April 3, 2009
    Date of Patent: January 17, 2012
    Assignee: ABB Research Ltd
    Inventors: Markus Hoidis, Lise Donzel
  • Patent number: 8097802
    Abstract: A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A8TMy11TMy22 . . . TMynnMzX46-y1-y2- . . . -yn-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM1, TM2, and TMn are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y1, y2, yn and Z are actual compositions of TM1, TM2, TMn, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8·qA?|?q1|y1?|?q2|y2? . . . ?|?qn|yn, wherein qA is a charge state of A, and wherein ?q1, ?q2, ?qn are, respectively, the nominal charge state of the first, second, and n-th TM.
    Type: Grant
    Filed: May 1, 2009
    Date of Patent: January 17, 2012
    Assignee: GM Global Technology Operations LLC
    Inventors: Jihui Yang, Xun Shi, Shengqiang Bai, Wenqing Zhang, Lidong Chen, Jiong Yang
  • Patent number: 8088220
    Abstract: In accordance with various embodiments, crystalline structures are formed by providing, at a growth temperature, a liquid comprising AlN and having a quality factor greater than approximately 0.14 and forming solid AlN from the liquid, the growth temperature being lower than the melting point of AlN.
    Type: Grant
    Filed: May 23, 2008
    Date of Patent: January 3, 2012
    Assignee: Crystal IS, Inc.
    Inventors: Glen A. Slack, Sandra B. Schujman
  • Publication number: 20110311453
    Abstract: An alloyed semiconductor quantum dot comprising an alloy of at least two semiconductors, wherein the quantum dot has a homogeneous composition and is characterized by a band gap energy that is non-linearly related to the molar ratio of the at least two semiconductors; a series of alloyed semiconductor quantum dots related thereto; a concentration-gradient quantum dot comprising an alloy of a first semiconductor and a second semiconductor, wherein the concentration of the first semiconductor gradually increases from the core of the quantum dot to the surface of the quantum dot and the concentration of the second semiconductor gradually decreases from the core of the quantum dot to the surface of the quantum dot; a series of concentration-gradient quantum dots related thereto; in vitro and in vivo methods of use; and methods of producing the alloyed semiconductor and concentration-gradient quantum dots and the series of quantum dots related thereto.
    Type: Application
    Filed: June 9, 2011
    Publication date: December 22, 2011
    Applicant: Indiana University Research and Technology Corporation
    Inventors: Shuming Nie, Robert E. Bailey