Abstract: A timing analysis method for a digital circuit design, a system and a computer readable storage media thereof are provided. The timing analysis method includes following steps. An integrated circuit (IC) design is obtained, wherein the IC is operated in a plurality of operating modes. A plurality of extracted timing models (ETMs) are respectively generated according to the operating modes of the IC design, wherein each of the ETMs includes a none on-chip variation (NOCV) part and an on-chip variation (OCV) part. The ETMs corresponding to the operating modes are integrated into a NOCV ETM and an OCV ETM, wherein the OCV part of the operating modes is not considered when the NOCV ETM is generated. And, a timing checking of the IC design is analyzed according to the NOCV ETM and the OCV ETM.

Abstract: A method for facilitating semiconductor device manufacturing may include the following steps: receiving a custom design data set, which complies with a first element-identification scheme; generating a compatible design data set using the custom design data set, wherein data elements in the compatible design data set correspond to data elements in the custom design data set, and wherein the compatible design data set is compatible with a dummy-pattern-data generation module; generating a first dummy-pattern data set using the dummy-pattern-data generation module and the compatible design data set; and generating a second dummy-pattern data set using the first dummy-pattern data set, wherein data elements in the second dummy-pattern data set correspond to data elements in the first dummy-pattern data set, and wherein the second dummy-pattern data set complies with the first element-identification scheme.

Abstract: Disclosed is an improved approach to implement timing signoff and optimization. Integrated MMMC timing closure functionality is provided in a single software session. The system provides the capability to perform signoff analysis, debugging, ECO, and TSO optimization for a large number of MMMC views in single software session.

Abstract: The present invention provides a SOI MOS device modeling method. The SOI MOS device is one having a source-drain injection not reaching the bottom. The method comprises: a) establishing an overall model comprising a primary MOS device model simulating an SOI MOS device having the source-drain injection reaching the bottom, a source body PN junction bottom capacitance model simulating a source body PN junction bottom capacitance, and a drain body PN junction bottom capacitance model simulating a drain body PN junction bottom capacitance; and b) extracting parameters respectively for the primary MOS device model, the source body PN junction bottom capacitance model, and the drain body PN junction bottom capacitance model in the overall model. In the prior art, the source body junction bottom capacitance and the drain body junction bottom capacitance in the SOI MOS device having a source-drain injection not reaching the bottom affect the performances of the device.

Abstract: A system, method, and computer program product for viewing analog simulation check violations in an EDA framework. Embodiments combine input data tables into a single data table for each check type using SQL inner join operations, create a SQL view of the single data table to list individual check violations, and output the view for user inspection of the corresponding check violations. Embodiments normalize the input data tables to include details of circuit nodes, elements, and paths implicated in the check violations. Additional views combine views of different check types into unified summary tables. Embodiments create a second view to aggregate individual check violations that involve the same circuit objects over time, and output the second view. Output views are self-describing, to enable a single graphical user interface to operate across multiple simulator versions. Metadata tables describe data types presented in various view columns, and user interactions allowed therewith.

Abstract: The present invention provides electrostatic discharge protectors. One aspect of the present invention provides an electrostatic discharge protector includes a substrate, an electrostatic discharge protection circuit disposed on the substrate, and a pickup ring surrounding the electrostatic discharge protection circuit. The pickup ring has a plurality of low resistance zones where a doping layer, a contact and a metal layer are connected in sequence, and the low resistance zones are distributed within the pickup ring separately and unequally.

Abstract: An intellectual property (IP) block design methodology for three-dimensional (3D) integrated circuits may comprise folding at least one two-dimensional (2D) block that has one or more circuit components into a 3D block that has multiple tiers, wherein the one or more circuit components in the folded 2D block may be distributed among the multiple tiers in the 3D block. Furthermore, one or more pins may be duplicated across the multiple tiers in the 3D block and the one or more duplicated pins may be connected to one another using one or more intra-block through-silicon-vias (TSVs) placed inside the 3D block.

Abstract: An integrated circuit (IC) is disclosed herein for managing power with flip-flops having a retention feature. In an example aspect, an IC includes a constant power rail, a collapsible power rail, multiple flip-flops, and power management circuitry. Each flip-flop of the multiple flip-flops includes a master portion that is coupled to the collapsible power rail and a slave portion that is coupled to the constant power rail. The power management circuitry is configured to combine a clock signal and a retention signal into a combined control signal and to provide the combined control signal to each flip-flop of the multiple flip-flops.

Abstract: Techniques generally disclosed herein relate to computation of a guard zone of a three-dimensional object. In some examples, guard zones may be computed by identifying intersection lines that couple adjacent planes of an object, and categorizing an external angle at an intersection line between adjacent planes as concave or convex. In some embodiments, for convex angles, a cylindrical surface can be determined that is located about an outside surface of the object and centered along the intersection line between the adjacent planes. In some embodiments, for concave angles, the external angle can be bisected with a bisection plane. A guard zone may be formed by one or more of (i) providing a guard zone plane parallel to the object that is a tangent to a given cylindrical surface, (ii) providing a guard zone plane parallel to the object that intersects a given bisection plane, and/or (iii) coupling adjacent guard zone planes.

Abstract: A method may include obtaining gate-level circuit design data that describes a gate-level circuit design. The gate-level circuit design data may include one or more instances of each of multiple cells that each may be associated with a corresponding default cell static timing data and a corresponding default cell stress data. The method may include selecting one of the instances of one of the multiple cells, determining in-design stress data associated with the selected instance, and determining whether the in-design stress data is not within a tolerance of the default cell stress data. In response to the in-design stress data not being within the tolerance of the default cell stress data, the method may include generating in-design static timing data describing a timing performance for the selected instance and updating the gate-level circuit design data such that the selected instance is associated with the in-design static timing data.

Abstract: A planar design to non-planar design conversion method includes following steps. At least a diffusion region pattern including a first side and a second side perpendicular to each other is received. A look-up table is queried to obtain a first positive integer according to the first side of the diffusion region pattern and a second positive integer according to the second side of the diffusion region pattern. Then, a plurality of fin patterns is formed. An amount of the fin patterns is equal to the second positive integer. The fin patterns respectively include a first fin length, and the first fin length is a product of the first positive integer and a predetermined value. The forming is performed by at least a computer-aided design (CAD) tool.

Abstract: A device for monitoring process variations across memory bitcells includes a bitcell inverter that provides an output voltage to be used for identifying skewed corners of the memory bitcells. A first comparator compares the output voltage with a first reference voltage, and a second comparator compares the output voltage with a second reference voltage. The first and the second comparators generate a corner code based on comparison results.

Abstract: Methods for modifying a layout design of an integrated circuit are provided. In one embodiment, a method for modifying an integrated circuit layout design includes providing an initial circuit layout design comprising a lower metal layer, an upper metal layer, and a first via electrically connecting the lower metal layer to the upper metal layer. The method further includes altering the initial circuit layout design by providing a second via, the second via being in electrical contact with no more than one of the upper metal layer and the lower metal layer, and the second via further being in proximity to the first via. Further, the method includes further altering the initial circuit layout design by providing a subresolution assist feature in proximity to the second via.

Abstract: Self-aligned via interconnects using relaxed patterning exposure. In accordance with a first method embodiment, a method for controlling a computer-aided design (CAD) system for designing physical features of an integrated circuit includes accessing a first pattern for first metal traces on a first metal layer, accessing a second pattern for second metal traces on a second metal layer, vertically adjacent to the first metal layer and accessing a precise pattern of intended interconnections between the first and second metal traces. The precise pattern of intended interconnections is operated on to form an imprecise via pattern that indicates a plurality of general areas in which vias are allowed. The imprecise via pattern is for use in an integrated circuit manufacturing process to form, in conjunction with operations to form the first and second metal layers, a plurality of self-aligned vias for interconnecting the intended interconnections.

Abstract: Disclosed is a technique for modeling resistance of a conductive component of a device, where the component comprises multiple conductive materials. If necessary (e.g., for a complex conductive component), the component is divided into multiple conductive regions. For a given conductive region, current flow-through and current flow-in-and-terminate axes are determined and the conductive region is divided into layers. Relative electric currents flowing along the current flow-through axis in each layer and along the current flow-in-and-terminate axis in each layer are evaluated to determine a total resistance value for the conductive region.

Abstract: A layout-legalizing system modifies a portion of a circuit layout that is selected by a user to generate a modified portion that satisfies a set of technology constraints and a set of design constraints. The system receives as input the set of technology constraints which a semiconductor manufacturing foundry requires the circuit layout to satisfy for manufacturability purposes. The system also receives a set of design constraints from the user which restricts how objects in the portion of the circuit layout can be modified to satisfy the set of technology constraints. The system can further receive a selection input from the user which identifies the portion of the circuit layout which is to be legalized. The system then modifies the identified portion of the circuit layout to obtain a modified portion which satisfies the set of design constraints and at least a subset of the set of technology constraints.

Abstract: A method of forming a magnetic tunnel junction (MTJ) device includes forming a first MTJ cap layer on a MTJ structure. The first MTJ cap layer includes a first non-nitrified metal. The method also includes forming a second MTJ cap layer over the first MTJ cap layer. The second MTJ cap layer includes a second non-nitrified metal. The method further includes forming a top electrode layer over the second MTJ cap layer. The second MTJ cap layer is conductive and configured to reduce or prevent oxidation.

Abstract: A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, a non-transitory computer-readable medium includes processor executable instructions. The instructions, when executed by a processor, cause the processor to initiate deposition of a capping material on a free layer of a magnetic tunneling junction structure to form a capping layer. The instructions, when executed by the processor, cause the processor to initiate oxidization of a first layer of the capping material to form a first oxidized layer of oxidized material.

Abstract: A method for accurately determining the shape of currents in a current spectrum for a circuit design is provided. The method includes determining timing and power consumption characteristics. In one embodiment, timing characteristics are provided through a electronic design automation tool. The timing characteristics yield a current pulse time width. In another embodiment, power consumption characteristics are provided by an EDA tool. The power consumption characteristics yield a current pulse amplitude. The shape of the current pulse is obtained by incrementally processing a power analyzer tool over relatively small time increments over one or more clock cycles while capturing the switching nodes of a simulation of the circuit design for each time increment. In one embodiment, the time increments are one nanosecond or less.

Abstract: A via disposition information acquiring unit acquires via disposition information indicating a disposition of the plurality of first vias (212). A second conductor information acquiring unit acquires second conductor information indicating disposition positions of a plurality of second conductors (232) repeatedly disposed in the second conductor layer (230). A via extracting unit extracts an extraction via with respect to each of the plurality of second conductors (232). The extraction via is each of the first vias (212) overlapping the second conductor (232). A via selecting unit selects a selection via with respect to each of the plurality of second conductors (232). The selection via is each of first vias (212) selected in a predetermined number from the extraction vias. An opening introducing unit introduces a first opening (234) to each of the plurality of second conductors (232). The first opening (234) overlaps the extraction via not selected by the via selecting unit in plan view.

Abstract: A method, an apparatus, and a computer program product for wireless communication are provided. The apparatus generates a plurality of interconnect patterns for a set of longitudinal channels that are occupied by horizontal interconnects. Each interconnect pattern may be different from the other interconnect patterns. Each interconnect pattern may define relative locations for the set of horizontal interconnects and gap channels. Highest crosstalk is determined for each of the interconnect patterns and the interconnect pattern with the minimum highest crosstalk is selected as a preferred pattern. The highest crosstalk may comprise far-end crosstalk or near-end crosstalk and may be calculated for a range of frequencies or for a plurality of frequencies. The crosstalk may be calculated by modeling the interconnects as transmission lines.

Abstract: A method and circuit for implementing sense amplifiers for sensing local write driver with bootstrap write assist for Static Random Access Memory (SRAM) arrays, and a design structure on which the subject circuit resides are provided. The circuit includes a sense amplifier used in both read and write operations with a write assist boost circuitry. The sense amplifier captures and amplifies write data at a selected SRAM cell column and drives the write data onto local bit lines. The write assist boost circuitry temporarily supplies an increased device voltage differential to the SRAM cell during write operations to significantly increase SRAM cell write ability.

Abstract: A method for designing a transformer in an integrated circuit includes receiving one or more desired characteristics of the transformer from user input and iteratively determining a design solution for the transformer through one or more simulations and modifications using a rule-set. The method combines the one or more desired characteristics with other preset characteristics of the transformer or the integrated circuit. A first model of the transformer is defined with typical load impedances and simulated having the combined characteristics to determine performance. Results of the simulation are processed to calculate performance with the load impedances specified by the user. The results are further processed to obtain a mathematical model that includes tuning capacitors.

Abstract: Verification-result ranking techniques for root cause analysis are disclosed using violation report analysis and violation weighting. Violation reports are unwieldy and result from a variety of design and process checks. The check coverage can overlap, causing a specific violation to trigger multiple reported violations. High turn around times for violation report analysis increase the risk that selective violation analysis will inadvertently suppress real design bugs. This reduces the odds that static checker reports alone will meet design sign-off criteria. Determining relationships among a plurality of violations for a design permits clustering violations into hot spots. Identification of primary and subsequent contributors to the plurality of violations is based on the relationships among violations. The hot spot with the highest weight is identified, and then subsequent violations are identified to maximize violation coverage.

Abstract: A method of designing, for a magneto-resistive (MR) sensor, a protection circuit having a first and a second N-channel field-effect transistor (NFET) and at least one positive-negative (PN) diode is disclosed. The method may include determining a safe operating voltage range for the MR sensor and determining, within the safe operating voltage range, a normal operating voltage range for the MR sensor. The method may also include determining a protection threshold voltage range outside of the normal operating voltage range and within the safe operating voltage range of the MR sensor. The method may also include selecting device parameters to configure the first and second NFETs and the at least one PN diode to, in response to a voltage applied to the MR sensor being within a protection threshold voltage range, limit, by shunting current, the voltage applied to the MR sensor.

Abstract: Described herein is a fixed-point piece-wise linear (FP PWL) approximation technique for computations of nonlinear functions. The technique results in circuit designs having relatively few and simple arithmetic operations, short arithmetic operands and small-sized look-up tables and the circuits resultant there from can be efficiently pipelined to run at multi-GSamples/s throughputs. In one exemplary embodiment, the FP PWL approximation technique was used in the design of an energy-efficient high-throughput and high-precision signal component separator (SCS) for use with in an asymmetric-multilevel-outphasing (AMO) power amplifier. The FP PWL approximation technique is appropriate for use in any application requiring high-throughput, area and power constrained hardware implementations of nonlinear functions.

Abstract: An integrated circuit includes a first conductive structure of a device configured to have a first voltage potential, a second conductive structure of the device configured to have a second voltage potential that is different than the first voltage potential, and a peacekeeper structure disposed between and separating the first conductive structure and the second conductive structure. The peacekeeper structure is separated from at least one of the first conductive structure and the second conductive structure by a fixed spacing distance for conductive lines for a self-aligned double patterning (“SADP”) process from the integrated circuit was formed.

Abstract: A method for making a matrix device including a matrix of photodetecting or photoemitting elements, the method including designing operations for: a) identifying, from at least one topology of the matrix device, one or more spurious conducting closed circuits; b) selecting at least one photodetecting or photoemitting element of the matrix device belonging to at least one of the spurious conducting closed circuits identified, the at least one element selected being made inactive.

Abstract: A method for routing a design may comprise receiving a design for implementing in a target device, wherein the design includes an input/output (I/O) signal of a functional block, and wherein the functional block is assigned to a physical component of the target device; based on the design and on a routing resource graph representing the target device, calculating a route including the physical component and a physical pin of the target device; and assigning the physical pin of the target device to the I/O signal based on the calculated route.

Abstract: A method for designing a transformer in an integrated circuit includes receiving one or more desired characteristics of the transformer from user input and iteratively determining a design solution for the transformer through one or more simulations and modifications using a rule-set. The method combines the one or more desired characteristics with other preset characteristics of the transformer or the integrated circuit. A first model of the transformer is defined with typical load impedances and simulated having the combined characteristics to determine performance. Results of the simulation are processed to calculate performance with the load impedances specified by the user. The results are further processed to obtain a mathematical model that includes tuning capacitors.

Abstract: A method and apparatus for improving physical synthesis of a circuit design is described. In one exemplary embodiment, preliminary routing information of nets in the circuit design is analyzed. The preliminary routing information includes track assignment information. Timing-critical nets are identified based on statistical distribution of the preliminary routing information of the nets. The identified timing-critical nets are assigned to a set of routing layers and removed from future net pattern matching. The remaining nets are clustered into multiple net patterns based on their physical attributes. The scaling factor for each net pattern is updated based on the scaling factor standard deviation and net length of the net pattern. Nets that are outside multiple standard deviations of a net pattern are assigned to routing layers. The scaling factors of the net patterns and the layer assignments are applied to the next phase of placement-based optimizations.

Abstract: A method generally comprises arranging a plurality of layer combinations into a plurality of groups such that each of the layer combinations is assigned to at least one group. A shifting analysis is performed on a plurality of benchmark circuits for each of the groups. At least one tuning vector value is calculated based, at least in part, on a plurality of criteria vectors of the benchmark circuits. A shift is applied on each of the groups by the tuning vector value and a technology file, such as a 2.5 dimensional RC techfile, is regenerated.

Abstract: A method for determining an interface timing of an integrated circuit includes: reading a netlist file and a timing constraint file of the integrated circuit, and determining a first interface port of the netlist file according to the netlist file and the timing constraint file; determining a first transmission path and a load on the first transmission path between the first interface port and a specific circuit element in the netlist file; generating an interface circuit file according to the first transmission path and the load on the first transmission path; and calculating a first signal transmission time of the first transmission path out according to the interface circuit file.

Abstract: The capacitance or inductance of electrical circuits is adjusted by measuring inductance or capacitance values of passive components fabricated on a first substrate, storing individual associations between the passive components and the respective measured values of the passive components, and determining electrical connections for the passive components based on the stored individual associations between the passive components and the respective measured values of the passive components.

Abstract: A finFET block architecture uses end-to-end finFET blocks in which the fin lengths are at least twice the contact pitch, whereby there is enough space for interlayer connectors to be placed on the proximal end and the distal end of a given semiconductor fin, and on the gate element on the given semiconductor fin. A first set of semiconductor fins having a first conductivity type and a second set of semiconductor fins having a second conductivity type can be aligned end-to-end. Interlayer connectors can be aligned over corresponding semiconductor fins which connect to gate elements.

Abstract: A method for using computing equipment to perform timing analysis on an integrated circuit design includes identifying a timing arc of the integrated circuit design. The timing arc may be a clock path or a data path in the integrated circuit design. A probability of the timing arc may be obtained and an aging effect for the timing arc may be calculated. The aging effect of the timing arc is calculated based on the probability. The timing arc may include maximum and minimum delays that are adjusted based at least partly on the calculated aging effect on the timing arc.

Abstract: Methods and systems for determining a numerical delay model based on one or more discretized delay models are described. A discretized delay model is a delay model in which the delay behavior is represented using a set of discrete data points of delay behavior. A numerical delay model is a delay model that can be used by a numerical solver to optimize a cost function. In general, computing delay using a numerical delay model is significantly faster than computing delay using discretized delay models. This performance improvement is important when optimizing a design for various metrics like timing, area and leakage power, because repeated delay computations are required in circuit optimization approaches.

Abstract: In one embodiment, a method of designing an integrated circuit is disclosed, including receiving a plurality of top level timing constraints and a description of the integrated circuit design defining a hierarchy of partitions having multiple levels with one or more nested partitions; generating timing models for each partition of the plurality of partitions in response to the description of the integrated circuit design; and concurrently generating timing budgets level by level for all partitions at each level, beginning with the lowest level to each next upper level of the hierarchy of the partitions in response to the description of the integrated circuit design, the timing models, and the plurality of top level timing constraints. Please see the detailed description and claims for other embodiments that are respectively disclosed and claimed.

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

Abstract: A method includes forming a first poly-silicon gate of a first transistor, the first poly-silicon gate having a first length. The first transistor is located in a first core. The method also includes forming a second poly-silicon gate of a second transistor, the second poly-silicon gate having a second length that is shorter than the first length. The second transistor is located in a second core. The first core is located closer to a center of a semiconductor die than the second core.

Abstract: A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.

Abstract: A method for analyzing an IC design, comprises: using a computer implemented electronic design automation tool to perform a parasitic RC extraction for a layout of the IC design, the parasitic RC extraction outputting for each of a plurality of routing paths, a nominal capacitive coupling, a minimum capacitive coupling and a maximum capacitive coupling, where the minimum and maximum capacitive couplings correspond to circuit patterning in the presence of double patterning mask misalignments; and performing one of a setup time analysis or a hold time analysis of the IC design using a computer implemented static timing analysis tool. For a given flip-flop having a launch path and a capture path, the setup or hold time analyses is performed using the minimum capacitive coupling for one of the launch and capture paths and the maximum capacitive coupling for the other of the launch and capture paths.

Abstract: Device structures and design structures for passive devices that may be used as electrostatic discharge protection devices in fin-type field-effect transistor integrated circuit technologies. A device region is formed in a trench and is coupled with a handle wafer of a semiconductor-on-insulator substrate. The device region extends through a buried insulator layer of the semiconductor-on-insulator substrate toward a top surface of a device layer of the semiconductor-on-insulator substrate. The device region is comprised of lightly-doped semiconductor material. The device structure further includes a doped region formed in the device region and that defines a junction. A portion of the device region is laterally positioned between the doped region and the buried insulator layer of the semiconductor-on-insulator substrate. Another region of the device layer may be patterned to form fins for fin-type field-effect transistors.

Abstract: A method comprises: receiving a circuit design comprising networks of first devices fabricated by a first fabrication process; selecting second devices to be fabricated by a second process; substituting the second devices for the first devices in the networks of the circuit design; sorting the second devices within a selected one of the networks by device area from largest device area to smallest device area; and assigning each second device in the selected network to be fabricated in a respective one of a plurality of tiers of a 3D IC for which a total area of second devices previously assigned to that tier is smallest, the second devices being assigned sequentially according to the sorting.

Abstract: Methods, systems, and techniques for estimating a transient diffusion potential of a diffusive property involve modeling, as a circuit, diffusive behavior of a diffusion region and then simulating operation of the circuit to estimate the transient diffusion potential at a location in the diffusion region by determining circuit potential at a node in the circuit that corresponds to the location in the diffusion region. The circuit has steady-state and transient portions that model the steady-state and transient behavior of the diffusion region, respectively. The transient behavior is modeled using a capacitive circuit element. The diffusive property diffuses linearly within the diffusion region and generation of the diffusive property is distributed within the diffusion region.

Abstract: A method of assigning layout patterns includes identifying a first set of layout patterns of a current layout design that is new or has been modified in comparison with a reference layout design. A second set of layout patterns of the current layout design is identified. A member of the second set of layout patterns that is not a member of the first set of layout patterns has a distance, less than a predetermined threshold distance, to at least another member of the second set of layout patterns. A third set of layout patterns is not modified in comparison with the reference layout design. The third set of layout patterns is assigned to a plurality of masks according to the reference pattern-assigning result.

Abstract: Device structures and design structures for a silicon controlled rectifier, as well as methods for fabricating a silicon controlled rectifier. The device structure includes first and second layers of different materials disposed on a top surface of a device region containing first and second p-n junctions of the silicon controlled rectifier. The first layer is laterally positioned on the top surface in vertical alignment with the first p-n junction. The second layer is laterally positioned on the top surface of the device region in vertical alignment with the second p-n junction. The material comprising the second layer has a higher electrical resistivity than the material comprising the first layer.

Abstract: A circuit analysis device includes: a processor configured to execute a procedure by: calculating, for power supply noise included in a power supply voltage supplied to a semiconductor memory device, variation characteristics of an electric potential relative to the power supply voltage in a specific memory cell included in a memory cell array; calculating power supply noise of a power supply system that occurs when a current is supplied to an equivalent circuit of the power supply system under a predetermined condition, the power supply system including a power supply line and an element for supplying a power supply voltage from a voltage source to a semiconductor device; calculating, from the variation characteristics, the electric potential obtained when the power supply noise is equal to a specific magnitude; and determining, by comparing the calculated electric potential with a threshold, whether memory latch-up will occur in the specific memory cell.

Abstract: A system, method, and computer program product for automatically approximating conventional Monte Carlo statistical device model evaluation for circuit simulation with drastic speed improvements, while preserving significant accuracy. Embodiments enable quick inspection of the effects of process mismatch variations on single devices and even large circuits compared to standard computationally prohibitive Monte Carlo analysis. Statistical device model variation is calculated as if all such variation is due to changes in threshold voltage, even though other physical phenomena are known to contribute. Threshold voltage variation is modeled as a function of statistical variation, device size, and working bias condition. Circuit simulation is faster when the full internal device model parameter set is not rebuilt for every Monte Carlo analysis iteration. Embodiments are compatible with both conventional SPICE and newer Fast SPICE simulations.

Abstract: A system, method, and computer program product is disclosed for performing electrical analysis of a circuit design. A voltage-based approach is described for performing two-stage transient EM-IR drop analysis of an electronic design. A two-stage approach is performed in some embodiments, in which the first stage operates by calculating the voltage at certain interface nodes. In the second stage, simulation is performed to simulate the circuit to concurrently obtain the current at the interface nodes. In some embodiments, multiple adjacent devices as identified as interface devices for purposes of the analysis. One situation where it may be useful to analyze a larger portion of the circuitry in this way where the analysis is being performed on a netlist having a power gate.