Electrode plate for semiconductor manufacturing apparatus

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Description

FIG. 1 is a top perspective view of an electrode plate for semiconductor manufacturing apparatus, showing our new design;

FIG. 2 is a bottom perspective view thereof;

FIG. 3 is a top plan view thereof;

FIG. 4 is a bottom plan view thereof;

FIG. 5 is a front side elevational view thereof;

FIG. 6 is a back side elevational view thereof;

FIG. 7 is a right side elevational view thereof;

FIG. 8 is a left side elevational view thereof;

FIG. 9 is an enlarged portion view taken from encircled portion labeled, “9,” in FIG. 1;

FIG. 10 is an enlarged portion view taken from encircled portion labeled, “10,” in FIG. 3; and,

FIG. 11 is a cross-sectional view taken along lines 11-11 in FIG. 3.

The dot-dashed lines illustrate the boundary of the enlarged portion views of FIGS. 9 and 10 in FIGS. 1, 3, 9, and 10 and form no part of the claimed design.

Claims

The ornamental design for an electrode plate for semiconductor manufacturing apparatus, as shown and described.

Referenced Cited
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Foreign Patent Documents
301138490 November 2021 KR
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Other references
  • Baibos 40PCS Round Graphite Plate Carbon Electrode Graphite Foil Diameter 10-20mm, Thickness 5mm Graphite Wafer Graphite Disc Electrode Plate Corrosion Resistant (Size : D13mm),https://www.amazon.de/-/en/Graphite-Electrode-Thickness-Corrosion-Resistant/dp/B0BLHHBD33?th=1,Nov. 4, 2022. (Year: 2022).
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  • TIPO; Office Action dated Feb. 21, 2023 in Application No. 111305570.
Patent History
Patent number: D1092423
Type: Grant
Filed: May 19, 2022
Date of Patent: Sep 9, 2025
Assignee: ASM IP Holding B.V. (Almere)
Inventors: JaeHyun Kim (Hwaseong-si), JeongHo Lee (Seoul), HyunSoo Jang (Osan-si)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/839,251