Abstract: Disclosed is a channel filter for separating microparticles, and more particularly to a channel filter which can easily separate a sample having various sized microparticles by using a surface topology. In the disclosed channel filter, a topology having an upward/downward reference height from a sample inlet to an outlet is continuously or discontinuously formed, and thus it is possible to efficiently separate microparticles from a sample liquid.

Abstract: Method of selectively etching a first material on a substrate with a high selectivity towards a second material by flowing a liquid etchant across a substrate surface at a flow sufficiently fast to generate a minimum mean velocity parallel to the substrate's surface, wherein the first material is selected from a group including materials with semiconducting properties based on at least two different chemical elements.

Abstract: Disclosed is a method of etching semiconductor nanocrystals, which includes dissolving semiconductor nanocrystals in a halogenated solvent containing phosphine so that anisotropic etching of the surface of semiconductor nanocrystals is induced or adding a primary amine to a halogenated solvent containing phosphine and photoexciting semiconductor nanocrystals thus inducing isotropic etching of the surface of the nanocrystals, thereby reproducibly controlling properties of semiconductor nanocrystals including absorption wavelength, emission wavelength, emission intensity, average size, size distribution, shape, and surface state.

Abstract: Selective etching techniques are used to manufacture a basic filtration element, which can then be used as a basis for constructing various devices for different applications. In this process, sheets of etchable material are etched from one or both sides of that sheet to form channels in a premasked pattern, which controls the minimum opening of the filtration element. The desired channel opening is only limited by the capability of the photochemical etching system being used. Alternatively, a filter element may be made by rolling or extruding a first sheet to form a plurality of recessed areas bordered by lands, selectively etching or punching through the recessed pattern areas, and bonding a second sheet having a plurality of etched or punched through areas to the first sheet, and, aligning the etched through areas to the second sheet with the recessed areas of the first sheet.

Abstract: Disclosed is a metal etching method, a metal etching control method and a control device thereof. The metal etching control method is employed in a metal wet etching machine and comprises steps below: performing etching to a metal film and acquiring an etching end time of the metal film; multiplying the etching end time with a constant ratio to acquire the over etching time of the metal film; and performing etching to the metal film with the over etching time to complete the etching to the metal film. The present invention can precisely judge a total real etching time needed for each of a batch of metal films as performing metal etching to the metal films to reduce the issue of unstable etching qualities as the metal film thicknesses are not regular.

Abstract: A high purity, non-toxic, environmentally friendly method for anisotropically etching single crystal silicon and etching polysilicon, suitable for microelectronics, optoelectronics and microelectromechanical (MEMS) device fabrication, using high purity aqueous ammonium hydroxide (NH4OH) solution generated at the point of use, is presented. The apparatus of the present invention supports generation of high purity aqueous NH4OH solution from ammonia NH3 gas dissolved into distilled/deionized water and maintained in equilibrium with an overpressure of NH3, within a hermetically enclosed chamber at the optimal temperature between 70-90° C., preventing evaporation of NH3 gas from aqueous NH4OH solution for achieving a high anisotropic etching rate. Other liquid anisotropic etching methods for silicon may use tetramethylammonium hydroxide (TMAH).

Abstract: A method of reducing defect heights of iron mound defects on a mill glass coated electrical steel, comprises contacting at least a portion of a surface of a mill glass coated electrical steel with an acidic solution for a contacting time sufficient to reduce an average height of iron defects on the surface to a an average height in a range of 0 percent to 150 percent of the thickness of the mill glass coating, without effectively removing the mill glass coating. After contacting, the acid contacted mill glass coated electrical steel is rinsed with water and dried.

Abstract: A method includes forming a chemical guide layer above a process layer. A template having a plurality of elements is formed above the process layer. The chemical guide layer is disposed on at least portions of the process layer disposed between adjacent elements of the template. A directed self-assembly layer is formed over the chemical guide layer. The directed self-assembly layer has alternating etchable components and etch-resistant components. The etchable components of the directed self-assembly layer are removed. The process layer is patterned using the template and the etch-resistant components of the directed self-assembly layer as an etch mask.

Abstract: A method for providing waveguide structures for an energy assisted magnetic recording (EAMR) transducer is described. The waveguide structures have a plurality of widths. At least one waveguide layer is provided. Mask structure(s) corresponding to the waveguide structures and having a pattern are provided on the waveguide layer(s). The mask structure(s) include a planarization stop layer, a planarization assist layer on the planarization stop layer, and a hard mask layer on the planarization assist layer. The planarization assist layer has a low density. The pattern of the mask structure(s) is transferred to the waveguide layer(s). Optical material(s) that cover the waveguide layer(s) and a remaining portion of the mask structure(s) are provided. The optical material(s) have a density that is at least twice the low density of the planarization assist layer. The method also includes performing a planarization configured to remove at least a portion of the optical material(s).

Abstract: An artificial leather etching process is provided with mixing predetermined weight percentages of PU, PVC, PE, PET, and EVA to form a wet etching agent; rotating a pair of opposite rollers wherein a lower one of the rollers is partially submerged in the wet etching agent; moving a continuous artificial leather member through a joining line of the opposite rollers so that the wet etching agent adhered on the lower one of the rollers etches a bottom surface of the continuous artificial leather member into an uneven surface; and producing a finished continuous artificial leather when the continuous artificial leather member leaves the opposite rollers. The finished continuous artificial leather has a leather-like finish.

Abstract: A substrate treatment method includes a substrate holding unit which horizontally holds a substrate; a rotating unit which rotates the substrate held by the substrate holding unit about a vertical axis; and a first nozzle having an opposing face to be opposed to a lower surface of the substrate inward of a peripheral portion of the substrate in spaced relation to the lower surface of the substrate during rotation of the substrate by the rotating unit and a treatment liquid spout provided in the opposing face for filling a space defined between the lower surface of the substrate and the opposing face with a treatment liquid spouted from the treatment liquid spout to keep the space in a liquid filled state; wherein the treatment liquid spreads outwardly over the lower surface of the substrate and further, flows around to a peripheral portion of an upper surface of the substrate.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?1.

Abstract: A method of making an article 2 comprising an ultra-thin sheet 26 of material secured at lateral regions to a support member, the method comprises laying the ultra-thin sheet on a substrate 20, forming the support member on the lateral regions of the ultra-thin sheet such that the lateral regions of the ultra-thin sheet are sandwiched between the support member and the substrate and adhered to the support member, and removing the substrate by vaporisation or by a dissolution step using a solvent, to leave the article. The ultra-thin sheet is supported around its periphery and has a central region in which the ultra-thin sheet is free from contact with any other material.

Abstract: An apparatus for altering a surface of a cylindrical object includes at least one container containing a fluid resist therein and having at least one opening from which the fluid resist is discharged; at least one roller operatively associated with the at least one container and having a surface sized and shaped to be exposed to the at least one opening, the surface area including a pattern of shapes and upon which the fluid resist is deposited; and at least one support member adjacent the at least one roller for supporting the cylindrical object during transit for contacting the at least one roller. A method is also provided.

Abstract: A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad.

Abstract: An etching apparatus includes a receiving container which receives a substrate, and a first spraying unit which supplies etchant into the receiving container. The receiving container includes a bottom plate, a plurality of bottom through holes defined in the bottom plate and through which the etchant is drained from the receiving container; and a plurality of side walls extended from the bottom plate.

Abstract: A glass article having an anti-glare surface. The anti-glare surface has a distinctness-of-reflected image of less than 95, and a haze of less than or equal to 50%. In one embodiment, the glass article further includes a smudge-resistant surface disposed on the anti-glare surface. Methods of making the glass article and anti-glare surface are also described.

Abstract: A method for treating silicon to form pillars, especially for use as the active anode material in Li-ion batteries, is disclosed. The process is simple to operate on a commercial scale since it uses a solution containing only a small number of ingredients whose concentration needs to be controlled and it can be cheaper to operate than previous processes. The solution includes: 0.01 to 5M HF 0.002 to 0.2M of metal ions capable of nucleating on and forming a porous layer comprising regions of elemental metal on the silicon surface; 0.001 to 0.7M of an oxidant selected from the group O2, O3, H2O2, the acid, ammonium or alkali metal salt of NO3?, S2O82?, NO2?, B4O72? and ClO4? or a mixture thereof. The treated silicon is suitably removed from the solution.

Abstract: In one embodiment, a rotary device includes a multiwall nanotube that extends substantially perpendicularly from a substrate. A rotor may be coupled to an outer wall of the multiwall nanotube, be spaced apart from the substrate, and be free to rotate around an elongate axis of the multiwall nanotube.

Abstract: A through-hole forming method includes steps of forming a first impurity region (102a) around a region where a through-hole is to be formed in the first surface of a silicon substrate (101), the first impurity region (102) being higher in impurity concentration than the silicon substrate (101), forming a second impurity region (102b) at a position adjacent to the first impurity region (102a) in the depth direction of the silicon substrate (101), the second impurity region (102b) being higher in impurity concentration than the first impurity region (102a), forming an etch stop layer (103) on the first surface, forming an etch mask layer (104) having an opening on the second surface of the silicon substrate (101) opposite to the first surface, and etching the silicon substrate (101) until at least the etch stop layer (103) is exposed via the opening.

Abstract: Monocrystalline semiconductor substrates are textured with alkaline solutions to form pyramid structures on their surfaces to reduce incident light reflectance and improve light absorption of the wafers. The alkaline baths include hydantoin compounds and derivatives thereof in combination with alkoxylated glycols to inhibit the formation of flat areas between pyramid structures to improve the light absorption.

Abstract: A method of forming a metal pattern on a display substrate includes blanket depositing a copper-based layer having a thickness between about 1,500 ? and about 5,500 ? on a base substrate, and forming a patterned photoresist layer on the copper-based layer. The copper-based layer is over-etched by an etching composition containing an oxidizing moderating agent where the over-etch factor is between about 40% and about 200% while using the patterned photoresist layer as an etch stopping layer, and where the etching composition includes ammonium persulfate between about 0.1% by weight and about 50% by weight, includes an azole-based compound between about 0.01% by weight and about 5% by weight and a remainder of water. Thus, reliability of the metal pattern and that of manufacturing a display substrate may be improved.

Abstract: A method for patterning a substrate is described. The patterning method may include performing a lithographic process to produce a pattern and a critical dimension (CD) slimming process to reduce a CD in the pattern to a reduced CD. Thereafter, the pattern is doubled to produce a double pattern using a sidewall image transfer technique.

Abstract: A method of patterning a first material on a polymeric substrate is described. The method includes providing a polymeric film substrate having a major surface with a relief pattern including a recessed region and an adjacent raised region, depositing a first material onto the major surface of the polymeric film substrate to form a coated polymeric film substrate, forming a layer of a functionalizing material selectively on the raised region of the coated polymeric film substrate to form a functionalized raised region and an unfunctionalized recessed region, and etching the first material from the polymeric substrate selectively from the unfunctionalized recessed region.

Abstract: A method of making a porous SiOC membrane is provided. The method comprises disposing a SiOC layer on a porous substrate, and etching the SiOC layer to form through pores in the SiOC layer. A porous SiOC membrane having a network of pores extending through a thickness of the membrane is provided.

Abstract: Disclosed is a method for fabricating nanofluidic channels having a height of from about 1 nm to about 10 nm. Generally, the method includes formation of doped silicon parallel strips in a silicon substrate, formation of a native oxide layer on the substrate, and etching of the native oxide layer at one of the strips to form a channel of a depth of between about 1 nm and about 10 nm. The method also includes bonding a second wafer to the surface, the second wafer including through etched windows to provide probe contacts to two of the parallel strips during use. These parallel strips provide high-frequency transmission lines in the device that can provide broadband dielectric spectroscopy measurement within the nanochannels.

Abstract: A method of combinatorial processing involving etching a first material and a second material on a substrate comprising: etching the first material with a high first etch rate with a first etchant; etching the second material with a high second etch rate with a second etchant, wherein the first etchant and the second etchant are used sequentially without being separated by a rinse.

Abstract: The present application relates to a porous thin film having holes, wherein the holes are formed in the top part and/or the bottom part of the thin film and the holes are linked to the pores of the thin film; and the present invention also relates to a production method for a porous thin film having holes, comprising the use of a particle alignment layer as a mold.

Abstract: A mold of an embodiment of the present invention has a surface that has a shape which is inverse of a surface shape of a moth-eye structure. This surface has a plurality of protrusions, a plurality of ridges extending between the plurality of protrusions via saddle portions, and a plurality of holes, each of which is defined by at least any three of the plurality of protrusions and ridges extending between the at least any three of the plurality of protrusions, and an average distance between centers of adjacent holes, p, and an average depth of the saddle portions, r, satisfy the relationship of 0.15?r/p?0.60.

Abstract: The present invention provides a method of easily chamfering and polishing an inner peripheral face and an outer peripheral face of a glass disk at low cost. By continuously supplying fresh etchants to an inner peripheral face and an outer peripheral face of a glass disk stacked body in which a plurality of glass disks are stacked, the inner and outer peripheral faces are polished.

Abstract: Embodiments of the invention may provide a method of printing one or more print tracks on a print support, or substrate, comprising two or more printing steps in each of which a layer of material is deposited on the print support according to a predetermined print profile. In each printing step, subsequent to the first step, each layer of material is deposited at least partially on top of the layer of material printed in the preceding printing step, so that each layer of printed material has an identical or different print profile with respect to at least a layer of material underneath. The method may further comprise depositing material in each printing step that is equivalent to or different from the material deposited in at least one of other the print layers.

Abstract: The present invention relates to a method for treating a block copolymer solution, wherein the method comprises: providing a solution comprising a block copolymer in a non aqueous solvent; and, treating the solution to remove metals using an ion exchange resin. The invention also relates to a method of forming patterns using the treated block copolymer.

Abstract: This invention provides a method of making a photovoltaic cell. The method uses an etching composition comprising one or more onium salts selected from the group consisting of iodonium salts and sulfonium and an organic medium to etch the anti-reflection coating. Also provided is a photovoltaic cell made by this method.

Abstract: A method of fabricating a touch screen panel according to an embodiment of the present invention includes: forming a reinforcing layer on the top and the bottom of a glass substrate by reinforcing the entire surface of the glass substrate defining a plurality of unit cell regions; forming the touch screen panels in the unit cell regions on a side of the glass substrate with the reinforcing layers; cutting the reinforced glass substrate into the touch screen panels; forming passivation layers on the outer surfaces of the touch screen panels and sequentially stacking the touch screen panels; and simultaneously with the stacking, performing healing on the non-reinforced cut-sides of the stacked touch screen panels.

Abstract: There is provided a method and system for adjusting the weight of a golf clubs. The method includes receiving a target additional weight for the golf club. A weighted filler is selected corresponding to the target additional weight and the interior volume of the golf club. The initially viscous weighted filler is injected into the golf club interior and allowed to cure.

Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.

Abstract: There is provided a semiconductor device manufacturing method for forming a step-shaped structure in a substrate by etching the substrate having thereon a multilayer film and a photoresist film on the multilayer film and serving as an etching mask. The multilayer film is formed by alternately layering a first film having a first permittivity and a second film having a second permittivity different from the first permittivity. The method includes a first process for plasma-etching the first film by using the photoresist film as a mask; a second process for exposing the photoresist film to hydrogen-containing plasma; a third process for trimming the photoresist film; and a fourth process for etching the second film by using the trimmed photoresist film and the plasma-etched first film as a mask. The step-shaped structure is formed in the multilayer film by repeatedly performing the first process to the fourth process in this sequence.

Abstract: A method for manufacturing a semiconductor device includes forming a patterned photoresist layer over a substrate, performing a plasma ashing process to the patterned photoresist layer, thereby removing a portion of the patterned photoresist layer, exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone, thereby removing other portions of the patterned photoresist layer, and performing a cleaning of the patterned photoresist layer after exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone.

Abstract: Disclosed is a thin-film transistor (10) manufacturing method that includes a process for forming a nitrate film (12x) that includes residual nickel (22) on a surface thereof, by bringing a nitric acid solution into contact with a polysilicon layer (11x); and a process for removing the nitrate film (12x) that includes residual nickel (22) from the polysilicon layer (11x) surface. With this surface treatment process, a polysilicon layer (11) with reduced concentration of a surface residual nickel (22) is provided, and a thin-film transistor (10) having excellent surface smoothness is attained.

Abstract: A protective chuck is disposed on a substrate with a gas layer between the bottom surface of the protective chuck and the substrate surface. The gas layer protects a surface region against a fluid layer covering the substrate surface. In some embodiments, the pressure fluctuation at the gas layers is monitored, and through the dynamic feedback, the gas flow rate can be adjusted to achieve a desired operation regime. The dynamic control of operation regime setting can also be applied to high productivity combinatorial systems having an array of protective chucks.

Abstract: A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers.

Abstract: A process for manufacturing a membrane of nozzles of a spray device, comprising the steps of laying a substrate, forming a membrane layer on the substrate, forming a plurality of nozzles in the membrane layer, forming a plurality of supply channels in the substrate, each supply channel being substantially aligned in a vertical direction to a respective nozzle of the plurality of nozzles and in direct communication with the respective nozzle.

Abstract: A method includes bonding a wafer on a carrier through an adhesive, and performing a thinning process on the wafer. After the step of performing the thinning process, a portion of the adhesive not covered by the wafer is removed, while the portion of the adhesive covered by the wafer is not removed.

Abstract: Provided are a micro-electromechanical systems (MEMS) microphone and a method of manufacturing the same. A manufacturing process is simplified compared to a conventional art using both upper and lower substrate processes. Since defects which may occur during manufacturing are reduced due to the simplified manufacturing process, the manufacturing throughput is improved, and since durability of the MEMS microphone is improved, system stability against the external environment is improved.

Abstract: In some embodiments, the present invention discloses an etchant solution hydrochloric acid and nitric acid to etch doped polysilicon at low etch rates. The doped polysilicon can be doped with Ge, In, B and Ga. Preferably, the concentration of hydrochloric acid can be greater than 1 vol %, and the concentration of nitric acid is greater than 15 vol %.

Abstract: A protective chuck is disposed on a substrate with a gas bearing layer between the bottom surface of the protective chuck and the substrate surface. The gas bearing layer protects a surface region against a fluid layer covering the substrate surface. The protection of the gas bearing is a non-contact protection, reducing or eliminating potential damage to the substrate surface due to friction. The gas bearing can enable combinatorial processing of a substrate, providing multiple isolated processing regions on a single substrate with different material and processing conditions.

Abstract: An optical element having a three-dimensional structure which can function in a visible range and can improve adherence at a structural interface of the element, and a method of manufacturing the optical element. The optical element includes a substrate, and at least a first layer and a second layer on the substrate are manufactured such that each of the first layer and the second layer has a repetition structure of spaces and structural parts at a pitch equal to or less than a wavelength of visible light, and at an interface between the first layer and the second layer, overlapped structures are provided in which the repetition structure of the first layer and the repetition structure of the second layer overlap in a stack direction of the layers.

Abstract: Provided is a touch panel manufacturing method wherein the number of exposure masks needed for pattern formation is reduced, and a method for manufacturing a display device provided with a touch panel. A transparent conductive film layer (11) and a metal layer (12) are laminated on a transparent substrate (1), and the transparent conductive film layer (11) and the metal layer (12) are formed into predetermined electrode patterns, with use of one resist pattern. A protective film (13) covering the transparent conductive film layer (11) and the metal layer (12) is formed, and openings (14, 15, and 16) are provided at predetermined positioned in the protective film (13). By etching with use of the protective film (13) having the openings (14, 15, and 16), the metal layer (12) is removed so that the transparent conductive film layer (11) is exposed, whereby at least either touch electrodes (2) or connection terminals (5) are formed.

Abstract: A method of manufacturing a substrate for a liquid discharge head having a supply port passing through a silicon substrate provided with an energy-generating element generating the energy used to discharge a liquid and allowing liquid to be supplied to the energy-generating element, includes preparing a silicon substrate in which a first etching mask having a first opening is provided on a first face, and a second etching mask having a second opening is provided on a second face that is the rear face of the first face; forming a first recess towards the second face from the first face within the first opening, and forming a second recess towards the first face from the second face within in the second opening; and performing crystalline anisotropic etching using the first and second etching masks as masks from both of the first and second faces, to form the supply port.

Abstract: A method for removing a plurality of dielectric materials from a supporting substrate by providing a substrate with a plurality of materials, contacting the substrate at a first temperature with a solution to more quickly remove a first dielectric material than a second dielectric material at the first temperature, and then contacting the substrate at a second temperature with a solution to more quickly remove the second dielectric material than the first dielectric material at the second temperature. Thus, the dielectric materials exhibit different etch rates when etched at the first and second temperatures. The solutions to which the first and second dielectric materials are exposed may contain phosphoric acid. The first dielectric material may be silicon nitride and the second dielectric material may be silicon oxide. Under these conditions, the first temperature may be about 175° C., and the second temperature may be about 155° C.