Abstract: A polishing composition of the present invention contains an oxidant, an anticorrosive, and a surfactant comprising a compound represented by Chemical Formula 1: One to three of R1 to R5 in Chemical Formula 1 are alkyl groups, alkynyl groups, alkenyl groups, aryl groups, or arylalkylene groups, one is a hydrogen atom or an alkyl group having 1 to 9 carbon atoms, and the remainder are hydrogen atoms. O—R6 is oxyethylene, oxypropylene, or a random or block conjugate of oxyethylene and oxypropylene. n is an integer of 1 or more. X is an OSO3? group, an OPO32? group, or an OH group.

Abstract: A method of fabricating a case for a portable electronic device includes: preparing a case preform; processing the inner surface of the case preform using a laser; and surface-treating the outer surface of the case preform, wherein the outer surface of the case preform shows fine prominences and depressions formed by the surface-treating of the outer surface of the case preform, and patterns formed by processing the inner surface of the case preform appear bumpily on the outer surface of the case preform.

Abstract: In the composite, an aluminum-plated steel sheet and a resin are securely and integrally joined together. Through chemical etching, the aluminum-plated steel sheet is caused to have a surface configuration, in which three-dimensional protrusions having shapes with a minor diameter of at least 0.3 ?m and a major diameter of at least 3 ?m are scattered over a plain part and a portion covered with shallow fine recesses with a diameter of 20 to 50 nm in a state of being distributed adjacent to each other on the plain part accounts for 30 to 50% of the surface area of the plain part. The surface of the three-dimensional protrusions is mainly ceramic containing silicon and the plain part is mainly ceramic containing aluminum. The resin is joined through injection molding with the aluminum-plated steel sheet having been inserted into a metallic mold.

Abstract: Some embodiments include methods of forming patterns. A block copolymer film may be formed over a substrate, with the block copolymer having an intrinsic glass transition temperature (Tg,O) and a degradation temperature (Td). A temperature window may be defined to correspond to temperatures (T) within the range of Tg,O?T?Td. While the block copolymer is in the upper half of the temperature window, solvent may be dispersed into the block copolymer to a process volume fraction that induces self-assembly of the block copolymer into a pattern. A defect specification may be defined, and the process volume fraction of solvent may be at level that achieves self-assembly within the defect specification. In some embodiments, the solvent may be removed from within the block copolymer while maintaining the defect specification.

Abstract: A method of examining a titanium alloy with an alpha phase and a beta phase is disclosed. The method includes: cutting a sample of a part made of the alloy; preparing a region of the cut surface of the sample situated in the vicinity of the edge of the sample, the edge being in common with the outside surface of the part; observing the alpha phase of the region at a magnification of greater than ×5000; deciding on whether granularity is present or absent in the alpha phase of a first zone contiguous with the edge of the sample; and concluding that the alloy has been contaminated with a gas if granularity is found to be absent in the alpha phase of the contiguous zone whereas granularity is present in the alpha phase outside the contiguous zone.

Abstract: A process for cleaning a compound semiconductor wafer; the compound semiconductor wafer comprises, taking gallium arsenide (GaAs) as a representative, a group III-V compound semiconductor wafer. The process comprises the following steps: 1) treating the wafer with a mixture of dilute ammonia, hydrogen peroxide and water at a temperature not higher than 20° C.; 2) washing the wafer with deionized water; 3) treating the wafer with an oxidant; 4) washing the wafer with deionized water; 5) treating the wafer with a dilute acid solution or a dilute alkali solution; 6) washing the wafer with deionized water; and 7) drying the resulting wafer. The process can improve the cleanliness, micro-roughness and uniformity of the wafer surface.

Abstract: A known method of forming organic semiconductor devices employs the deposition of a conductive polymer onto a substrate to form electrodes or conductive tracks and then to apply an electrical material such as an organic semiconductor on top of these tracks. Although the conductive polymer serves as a highly efficient injector of electrons into the semiconductor, it is not a good conductor. This introduces undesirable inefficient in the supply of current to and from the semiconductor. Worse still the conductivity may deteriorate with time. A solution to this problem has been found by printing the polymer (7) onto a conductive layer (6) carried on a substrate (5). The printed polymer (7) is then used as a resist during a process in which parts of the conductive polymer not protected by the polymer are removed. The resulting device benefits from the good electron injection qualities of the conductive polymer (7) and efficient conduction by virtue of the underlying conductive layer (6).

Abstract: A base surface processing method includes forming a protective film on a base surface; thinning a part of a base by grinding a part of the base surface; and etching a ground surface ground by the thinning.

Abstract: The invention relates to a method and device for characterizing wafers during the production of solar cells. Characterizing wafers includes a) providing a wafer and carrying out a production process with the wafer for producing a solar cell or a plurality of solar cells; b) carrying out a wet chemical step with the wafer during the production process, wherein the wet chemical step decreases an influence of the wafer surface on a lifetime of charge carriers in the wafer; c) irradiating the wafer with light for creating the charge carriers in the wafer during the wet chemical step or after the wet chemical step; d) determining the lifetime of the charge carriers created in step c); and e) characterizing the wafer by means of the lifetime determined in step d).

Abstract: Fabrication of thin sheets of glass or other substrate material for use in devices such as touch sensor panels is disclosed. A pair of thick glass sheets, typically with thicknesses of 0.5 mm or greater each, may each be patterned with thin film on a surface, sealed together to form a sandwich with the patterned surfaces facing each other and spaced apart by removable spacers, either or both thinned on their outside surfaces to thicknesses of less than 0.5 mm each, and separated into two thin glass sheets. A single thick glass sheet, typically with a thickness of 0.5 mm or greater, may be patterned, covered with a protective layer over the pattern, thinned on its outside surface to a thickness of less than 0.5 mm, and the protective layer removed. This thinness of less than 0.5 mm may be accomplished using standard LCD equipment, despite the equipment having a sheet minimum thickness requirement of 0.5 mm.

Abstract: A laser processing method for forming a hole in a sheet-like object to be processed made of silicon comprises a depression forming step of forming a depression in a part corresponding to the hole on a laser light entrance surface side of the object, the depression opening to the laser light entrance surface; a modified region forming step of forming a modified region along a part corresponding to the hole in the object by converging a laser light at the object after the depression forming step; and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the hole in the object; wherein the modified region forming step exposes the modified region or a fracture extending from the modified region to an inner face of the depression.

Abstract: Disclosed is a method for treating semiconductor wafer including: providing a layer that contains lanthanum oxide or a lanthanide oxide (e.g. Dy2O3, Pr2O3, Ce2O3) applying an aqueous solution, wherein the aqueous solution is carbonated water, whereby the layer that contains lanthanum oxide or a lanthanide oxide is removed at specific areas, so that the surface, on which the layer that contains lanthanum oxide or a lanthanide oxide has been deposited, is exposed.

Abstract: The invention is directed to the provision of a method for manufacturing a crystal oscillator manufacturing method that can achieve a highly precise fine adjustment without applying unnecessary external force to a crystal oscillator, and that can adjust a plurality of crystal oscillators in a collective manner. More specifically, the invention provides a method for manufacturing a crystal oscillator includes a first etching step for forming a prescribed external shape, an electrode forming step for forming an electrode at least in a portion of a surface of the external shape, a leakage amount measuring step for measuring leakage amount associated with leakage vibration of the external shape, and a second etching step for etching the external shape by an amount that is determined based on a measurement result of the leakage amount measuring step so as to adjust balance.

Abstract: A method for manufacturing a touch panel includes the following steps. A mother plate is provided. A plurality of adhesive materials are formed on the mother plate. A plurality of cover glasses are disposed on the adhesive materials respectively. The adhesive materials are cured, whereby the cover glasses are attached to the mother plate. A plurality of circuit units are formed on the cover glasses respectively. The cover glass having the circuit unit is removed from the mother plate, wherein the bonding strength of the cured adhesive material is within a range about between 5 g/25 mm and 600 g/25 mm, whereby the adhesive material provides enough adhesive force between the cover glass and the mother plate, and the adhesive material cannot be stayed on a surface of the cover glass during a removing process.

Abstract: A plurality of process liquid supply nozzles 10 are arranged at different levels on right and left sides of a semiconductor wafer W in a process bath 1. A discharge port of each of the nozzles 10 is directed toward the semiconductor wafer W. In accordance with a predetermined procedure, a process liquid is discharged from one or more nozzles 10 selected from the plurality of nozzles 10. In order to perform a chemical liquid treatment, a chemical liquid is discharged from the lowermost nozzle 10, for example, and thereafter, the nozzles 10 on the upper levels sequentially discharge the chemical liquid. In order to perform a rinse liquid treatment by replacing the chemical liquid in the process bath 1 with a rinse liquid, the rinse liquid is discharged from the lowermost nozzle 10 at first, for example. Thereafter, the rinse liquid is discharged from all the nozzles 10. In this manner, efficiency and uniformity in the liquid treatment can be improved.

Abstract: A method of forming a patterned substrate is provided. The method includes providing a substrate (300) having a structured surface region comprising one or more recessed features (310). The method includes disposing a first liquid (325) onto at least a portion of the structured surface region. The method includes contacting the first liquid with a second liquid (330). The method includes displacing the first liquid with the second liquid from at least a portion (315) of the structured surface region. The first liquid is selectively located in at least a portion of the one or more recessed features.

Abstract: This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition.

Abstract: The object of the present invention is a new inkjet printable etching composition comprising an etchant, which is activated by a second component. Thus, a further object is the use of this new composition in a process for the etching of surfaces semiconductor devices or surfaces of solar cell devices.

Abstract: A method of forming an implant to be implanted into living bone is disclosed. The method comprises the act of roughening at least a portion of the implant surface to produce a microscale roughened surface. The method further comprises the act of immersing the microscale roughened surface into a solution containing hydrogen peroxide and a basic solution to produce a nanoscale roughened surface consisting of nanopitting superimposed on the microscale roughened surface. The nanoscale roughened surface has a property that promotes osseointegration.

Abstract: Methods for fabricating arrays of nanoscaled alternating lamellae or cylinders in a polymer matrix having improved long range order utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: A method includes applying a final etch-resistant material to an in-process substrate so that the final etch-resistant material at least partially covers first microcontact portions integral with the substrate and projecting upwardly from a surface of the substrate, and etching the surface of the substrate so as to leave second microcontact portions below the first microcontact portions and integral therewith, the final etch-resistant material at least partially protecting the first microcontact portions from etching during the further etching step. A microelectronic unit includes a substrate, and a plurality of microcontacts projecting in a vertical direction from the substrate, each microcontact including a base region adjacent the substrate and a tip region remote from the substrate, each microcontact having a horizontal dimension which is a first function of vertical location in the base region and which is a second function of vertical location in the tip region.

Abstract: A method of forming a device is provided. A substrate having a component is provided and a sacrificial layer is formed over the component. The sacrificial layer includes a cavity portion disposed about the component and a tunnel portion adjacent to the cavity portion. In addition, an encapsulation layer having a cover portion and a perimeter portion is formed over the sacrificial layer. The cover portion encapsulates the cavity portion such that the cavity portion forms a cavity within the cover portion. The perimeter portion is disposed over the tunnel portion. Moreover, an access hole is formed in the perimeter portion of the encapsulation layer.

Abstract: To provide a liquid processing apparatus capable of processing substrates with a high throughput with the lesser number of nozzles for chemical-liquid, when the substrates that are horizontally held in cup bodies are liquid-processed by supplying a chemical liquid to the substrates. Taking a developing process as an example of a liquid process, two-types of developing nozzles are prepared for two types of developing methods. The developing nozzle, which is used in the method in which the nozzle is engaged with the process for a longer period of time, is individually disposed on each of a first processing module 1 and a second processing module 2. On the other hand, the developing nozzle, which is used in the method in which the nozzle is engaged with the process for a shorter period of time, is used in common in the first liquid processing module 1 and the second liquid processing module 2. The common developing nozzle is configured to wait on an intermediate position between the modules 1 and 2.

Abstract: An etching method includes: applying a radiation to an etching aqueous solution; and etching a material to be etched by using the etching aqueous solution irradiated with the radiation.

Abstract: An etching paste includes an acid compound, an organic binder, a nitrogen-containing component, the nitrogen-containing component including one or more of an amine compound or an ammonium compound, a cobalt aluminum oxide, and a solvent.

Abstract: Disclosed herein is an interface treatment method for germanium-based device, which belongs to the field of manufacturing technologies of ultra large scaled integrated (ULSI) circuits. In the method, the natural oxide layer on the surface of the germanium-based substrate is removed by using a concentrated hydrochloric acid solution having a mass percentage concentration of 15%˜36%, and dangling bonds of the surface are performed a passivation treatment by using a diluted hydrochloric acid solution having a mass percentage concentration of 5%˜10% so as to form a stable passivation layer on the surface. This method makes a good foundation for depositing a high-K (high dielectric constant) gate dielectric on the surface of the germanium-based substrate after cleaning and passivating, enhances quality of the interface between the gate dielectric and the substrate, and improves the electrical performance of germanium-based MOS device.

Abstract: The invention relates to a method for modification of a biocompatible component comprising the steps of a) providing a biocompatible component at least partly covered by metallic oxide; and b) treating at least a part of said component, which part is covered by said metallic oxide, with an aqueous composition comprising oxalic acid; whereby a modified metallic oxide is obtained. The invention also relates to a biocompatible component comprising a substrate having a surface comprising a) a microstructure comprising pits separated by plateus and/or ridges; and b) a primary nanostructure being superimposed on said microstructure, said primary nanostructure comprising depressions arranged in a wave-like formation.

Abstract: A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged.

Abstract: Provided in one embodiment is a method of forming a movable joint or connection between parts that move with respect to one another, wherein at least one part is at least partially enclosed by at least one second part. The method includes positioning an etchable material over an at least one first part, molding or forming an at least one second part over at least the etchable material, and removing the etchable material.

Abstract: A method for etching an ultra thin film is provided which includes providing a substrate having the ultra thin film formed thereon, patterning a photosensitive layer formed over the ultra thin film, etching the ultra thin film using the patterned photosensitive layer, and removing the patterned photosensitive layer. The etching process includes utilizing an etch material with a diffusion resistant carrier such that the etch material is prevented from diffusing to a region underneath the photosensitive layer and removing portions of the ultra thin film underneath the photosensitive layer.

Abstract: A method using directed self-assembly of BCPs enables the making of a master disk for nanoimprinting magnetic recording disks that have patterned data islands and patterned binary encoded nondata marks. The method uses guided self-assembly of a BCP to form patterns of sets of radial lines and circumferential gaps of one of the BCP components, which can be used as an etch mask to make the master disk. The sets of radial lines and circumferential gaps can be patterned so as to encode binary numbers. The pattern is replicated as binary encoded nondata marks into the nanoimprinted disks, with the marks functioning as binary numbers for data sector numbers and/or servo sector numbers. If the disks also use a chevron servo pattern, the binary numbers can function to identify groups of tracks associated with the chevron servo pattern.

Abstract: A method and device for treating silicon wafers. In a first step, the silicon wafers (22) are conveyed flat along a continuous, horizontal conveyor belt (12, 32) and nozzles (20) or the like spray an etching solution (21) from the top onto the wafers to texture them, only little etching solution (21) being applied to the silicon wafers (22) from below. In a second step, the silicon wafers (22), which are aligned as in the first step, are wetted exclusively from below with the etching solution (35) to etch-polish them.

Abstract: A substrate surface comprises at least partially at least one elongated structure, wherein each elongated structure comprises a plurality of channels, said channels extending in the direction of the longitudinal axis of the elongated structure, wherein said at least one elongated structure comprises silicon dioxide. The structures are manufactured by: a) providing a reaction solution comprising a silicate, a micelle forming agent, an alkane, a salt, and at least 1.5 M HCl, having a pH of 2 or lower, b) stirring not more than 10 minutes, c) bringing the reaction solution into contact with a substrate surface and d) treating the obtained material with one method selected from a) heat treating the material above 300° C., b) treating the material with at least one selected from H2O2, and H2SO4, c) treating the material with microwaves to digest the micelle forming agent.

Abstract: Systems and methods may provide electrical contacts to an array of substantially vertically aligned nanorods. The nanorod array may be fabricated on top of a conducting layer that serves as a bottom contact to the nanorods. A top metal contact may be applied to a plurality of nanorods of the nanorod array. The contacts may allow I/V (current/voltage) characteristics of the nanorods to be measured.

Abstract: Methods and etchant compositions for wet etching to selectively remove a hafnium aluminum oxide (HfAlOx) material relative to silicon oxide (SiOx) are provided.

Abstract: A protective chuck is magnetically levitated on a substrate with a gas layer between the bottom surface of the protective chuck and the substrate surface. The gas layer protects a surface region of the substrate against a fluid layer covering the remaining of the substrate surface without contacting the substrate, reducing or eliminating potential damage to the substrate surface. The magnetically levitated protective chuck can enable combinatorial processing of a substrate, providing multiple isolated processing regions on a single substrate with different material and processing conditions.

Abstract: A method for encapsulating structures (11) (typically MEMS structures) supported by a carrier substrate (12) (typically made of glass or silicon), includes: application, on the carrier substrate (12), of at least one cover (7) supported by a mould (1, 2, 6), the mould including a catching layer (6), each cover (7) being in contact with the catching layer (6); then fastening of at least one cover (7) onto the carrier substrate (12); and then separation of the mould (1, 2, 6) from the at least one cover (7). The catching layer (6) includes a fluoropolymer. Preferably, the mould (1, 2, 6) is mechanically separated from the at least one cover (7), by pulling the mould (1, 2, 6) away from the at least one cover (7). Thus, the mould (1) can be reused, which considerably simplifies encapsulating operations carried out on an industrial scale.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract: A method of removing an alumina layer around a main pole layer during perpendicular magnetic recording head fabrication is disclosed. The alumina etch sequence includes immersing a substrate in a series of aqueous solutions purged with an inert gas to remove oxygen thereby avoiding corrosion of the main pole. Initially, the substrate is soaked and heated in deionized (DI) water. Once heated, the substrate is immersed in an etching bath at about 80° C. and pH 10.5. Bath chemistry is preferably based on Na2CO3 and NaHCO3, and N2 purging improves etch uniformity and reduces residue. Thereafter, the substrate is rinsed in a second DI water bath between room temperature and 80° C., and finally subjected to a quick dump rinse before drying. Inert gas, preferably N2, may be introduced into the aqueous solutions through a purge board having a plurality of openings and positioned proximate to the bottom of a bath container.

Abstract: A chrome-free composition of an acidic suspension of manganese compounds and manganese ions are applied to an organic polymer surface to etch the surface. The etched surface is then plated with metal.

Abstract: According to embodiments of the present invention, a method of processing a wafer is provided. The wafer includes a plurality of through-wafer interconnects extending from a frontside surface of the wafer to a backside surface of the wafer. The method includes removing a part of wafer material of the back-side such that a portion of the wafer material between the through-wafer interconnects is removed, thereby exposing a portion of the through-wafer interconnects, forming a layer of low-k dielectric material between the through-wafer interconnects, and planarizing the layer of low-k dielectric material such that a surface of the portion of the through-wafer interconnect is exposed.

Abstract: The invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing a silicon-containing substrate. A method of the invention comprises the steps of contacting a silicon-containing substrate with a polishing pad and an aqueous CMP composition, and causing relative motion between the polishing pad and the substrate while maintaining a portion of the CMP composition in contact with the surface of the substrate to abrade at least a portion of the substrate. The CMP composition comprises a ceria abrasive, a polishing additive bearing a functional group with a pKa of about 4 to about 9, a nonionic surfactant with an hydrophilic portion and a lipophilic portion wherein the hydrophilic portion has a number average molecular weight of about 500 g/mol or higher, and an aqueous carrier, wherein the pH of the composition is 7 or less. The method reduces defects on the wafers, particularly local areas of high removal.

Abstract: A method of manufacturing a metallized ceramic substrate includes forming a metal layer on a ceramic substrate, and forming on the metal layer a resist having a first patterned resist opening and a second patterned resist opening for the metal layer to be exposed therefrom. A first width of the first patterned resist opening is greater than the thickness of the metal layer, and a second width of the second patterned resist opening is less than the thickness of the metal layer. A wet-etching process is conducted, to form in the first patterned resist opening a patterned metal layer opening and form in the second patterned resist opening a patterned metal layer dent. Therefore, an internal stress between the metal layer and the ceramic substrate is reduced, and the yield rate and reliability of the metallized ceramic substrate is increased.

Abstract: Disclosed herein are methods of making micropores of a desired height and/or width between two isotropic wet etched features in a substrate which comprises single-level isotropic wet etching the two features using an etchant and a mask distance that is less than 2× a set etch depth. Also disclosed herein are methods using the micropores and microfluidic devices comprising the micropores.

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract: To provide an electromagnetic-wave shielding plate superior in an electromagnetic-wave shielding property, a light-transmitting property and non-visibility of a mesh pattern at low cost. A pattern of a resin layer is printed on a metal layer of a transparent substrate by a printing method. After that, the metal layer is over-etched with the resin layer used as an etching mask, and a part of the resin layer protruding from the remaining metal layer in a plate-surface direction is removed. As a result, an electromagnetic-wave shielding plate superior in an electromagnetic-wave shielding property and non-visibility and having, for example, a pattern line width of 3 ?m or more and 25 ?m or less.

Abstract: A method for processing a surface involves depositing at least one class of enzymes (2) onto the surface (1); introducing at least a reactant (3) into an environment of the surface (1), and causing interaction between the enzymes (2) and the reactant (3), thereby to cause processing of a region of the surface (1), the processed region of the surface (1) being defined with respect to a region thereof that is proximate (4) to where the enzymes (3) have been deposited.

Abstract: Adherence of contaminant residues or particles is suppressed, corrosion of exposed surfaces is substantially reduced or eliminated during the process of dicing a wafer by sawing. A fluoride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; a hydroxycarboxylic acid and/or salt thereof or amine group containing acid, a surfactant and deionized water is employed.

Abstract: The present invention relates to articles comprising a cobalt-chromium alloy and bearing a surface oxide layer that has a thickness of 20 to 40 ?, is enriched in chromium relative to said article, and includes a plurality of indentions that, independently, have a diameter of from about 40 to about 500 nm. Such articles can be suitable for implantation in a mammal.

Abstract: Disclosed herein are methods of controlling the etching of a layer of silicon nitride relative to a layer of silicon dioxide. In one illustrative example, the method includes providing an etch bath that is comprised of an existing etchant adapted to selectively etch silicon nitride relative to silicon dioxide, performing an etching process in the etch bath using the existing etchant to selectively remove a silicon nitride material positioned above a silicon dioxide material on a plurality of semiconducting substrates, determining an amount of the existing etchant to be removed based upon a per substrate silicon loading of the etch bath by virtue of etching the plurality of substrates in the etch bath and determining an amount of new etchant to be added to the etch bath based upon a per substrate silicon loading of the etch bath by virtue of etching the plurality of substrates in the etch bath.