Abstract: A composition is provided that is effective for removing post etch treatment (PET) polymeric films and photoresist from semiconductor substrates. The composition exhibits excellent polymer film removal capability while maintaining compatibility with copper and low-? dielectrics and contains water, ethylene glycol, a glycol ether solvent, morpholinopropylamine and a corrosion inhibiting compound and optionally one or more metal ion chelating agent, one or more other polar organic solvent, one or more tertiary amine, one or more aluminum corrosion inhibition agent, and one or more surfactant.

Abstract: Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

Abstract: A method is provided for producing a microstructure. The method includes the first step of forming a supporting layer on a base substrate including a silicon substrate provided with recessed sections at a first surface thereof and a metal structure filling the recessed sections so as to come in contact with the metal structure at the first surface, the second step of forming a structure including the metal structure and the supporting layer by selectively etching the silicon substrate to expose at least the surface of the metal structure opposite the surface in contact with the supporting layer from the silicon substrate, and the third step of selectively etching the supporting layer of the metal structure.

Abstract: Methods for fabricating sublithographic, nanoscale arrays of openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the invention use a self-templating or multilayer approach to induce ordering of a self-assembling block copolymer film to an underlying base film to produce a multilayered film having an ordered array of nanostructures that can be removed to provide openings in the film which, in some embodiments, can be used as a template or mask to etch openings in an underlying material layer.

Abstract: Hot melt etch resist is selectively applied to an anti-reflective coating or a selective emitter on a semiconductor wafer. The exposed portions of the anti-reflective coating or selective emitter are etched away using an inorganic acid containing etch to expose the semiconductor surface. The hot melt etch resist is then stripped from the semiconductor with an alkaline stripper which does not compromise the electrical integrity of the semiconductor. The exposed semiconductor is then metalized to form current tracks.

Abstract: There is provided a process for producing an end member capable of improving adhesiveness without not always requiring grooves or rough surfaces at a fitting portion of the end member, at the time of joining a photo conductor drum having an aluminum-made or aluminum alloy-made substrate and a crystalline resin-made end member with an adhesive. A process for producing an end member to be mounted on an end portion of a photo conductor drum and formed of a material including a crystalline resin, wherein the end member has a fitting portion to be fitted to the end portion of the photo conductor drum and the process has a step of subjecting at least an outer surface of the fitting portion to an oxidation treatment.

Abstract: Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming etch resistant fill control topographical features that overlie a semiconductor substrate. The etch resistant fill control topographical features define an etch resistant fill control confinement well. A block copolymer is deposited into the etch resistant fill control confinement well. The block copolymer is phase separated into an etchable phase and an etch resistant phase. The etch resistant fill control topographical features direct the etch resistant phase to form an etch resistant plug in the etch resistant fill control confinement well.

Abstract: A pressure-based chemical etch method is used to shape polymer nanopores into cones. By varying the pressure, the pore tip diameter can be controlled, while the pore base diameter is largely unaffected. The method provides an easy, low-cost approach for conically etching high density nanopores.

Abstract: A method of forming an implant to be implanted into living bone is disclosed. The method comprises the act of roughening at least a portion of the implant surface to produce a microscale roughened surface. The method further comprises the act of immersing the microscale roughened surface into a solution containing hydrogen peroxide and a basic solution to produce a nanoscale roughened surface consisting of nanopitting superimposed on the microscale roughened surface. The nanoscale roughened surface has a property that promotes osseointegration.

Abstract: A microfluidic cartridge having a microfluidic channel may have at least one surface that has been roughened, etched or otherwise treated to alter its surface characteristics. In some instances, a microfluidic cartridge may have a microfluidic channel that is configured to provide even distribution of a lysing reagent across the channel. The surface may be roughened or etched using a laser, an abrasive, application of a solvent or in any other suitable manner.

Abstract: Coated film is removed at an outer peripheral edge of a substrate before heat-treating in CSD method by spraying or dropping liquid for removing CSD coated film including water and organic solvent mixed in a weight ratio of 50:50 to 0:100, in which the organic solvent is one or more selected from the group consisting of ?-diketones, ?-ketoesters, polyhydric alcohol, carboxylic acids, alkanolamines, ?-hydroxy carboxylic acid, ?-hydroxy carbonyl derivatives, and hydrazone derivatives.

Abstract: A pickling solution for the surface pre-treatment of plastic surfaces in preparation for metallization, the solution comprising a source of Mn(VII) ions; and an inorganic acid; wherein the pickling solution is substantially free of chromium (VI) ions, alkali ions, and alkaline-earth ions.

Abstract: Methods of fabricating the fusible link are directed to processing a multi-layer clad foil having a first layer suitable for forming a fusible link and a second layer suitable for forming one or more welding tabs. In some embodiments, the first layer is an aluminum layer and the second layer is a nickel layer. A two-step etching process or a single step etching process is performed on the clad foil to form an etched clad foil having multiple tabs made of the second layer and connected to the current collector conductor pads and battery cell conductor pads, and one or more connections made of the first layer that form aluminum conductors. The aluminum conductors are shaped and sized to form aluminum fusible conductors during either the etching process or a subsequent stamping process. A single fusible link or an array of fusible links can be formed.

Abstract: A patterned transparent conductor including a conductive layer coated on a substrate is described. More specifically, the transparent conductor can be patterned by screen-printing an acidic etchant formulation on the conductive layer. A screen-printable etchant formulation is also disclosed.

Abstract: A method for marking an item including a shape memory polymer (SMP) having a visual readable and/or machine readable graphic element on the surface of the item. The method includes pretreating the surface of the item; colouring the surface of the item with a dye solution containing an organic dye and an organic solvent; cleaning and drying the surface of the item; and engraving by at least partially ablating the surface of the item. The dyeing process is suitable for colouring the surface of a shape memory polymer (SMP), wherein the information is engraved in a form of a code or other label on the coloured surface. The colouring causes an increased contrast and thus facilitates machine readability of marking and coding without affecting the other properties of the SMP.

Abstract: A chemical treatment apparatus and a method for performing a chemical treatment of a wafer, etc., by supplying a chemical via a cell. The apparatus includes a cylindrical inner cell and a cylindrical outer cell with open ends disposed at an outer circumference of the inner cell. The outer cell is axially movable to vary the width of a slit formed between a bottom end of the outer cell and a top surface of the substrate-holding means by the axial movement, thereby adjusting the discharge rate of the chemical and varying the pressure of the chemical.

Abstract: A piezo-resistive MEMS resonator comprising an anchor, a resonator mounted on the anchor, an actuator mounted to apply an electrostatic force on the resonator and a piezo-resistive read-out means comprising a nanowire coupled to the resonator.

Abstract: A method according to one embodiment includes contacting an oxidant with an AlTiC portion of a magnetic head for recessing TiC grains of the AlTiC portion. A method according to another embodiment includes contacting a peroxide with an AlTiC portion of a magnetic head for recessing TiC grains of the AlTiC portion from a media bearing surface of the AlTiC portion.

Abstract: An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove metal shorts (222), smearing and eaves resulting from CMP or in failure analysis for uniform removal of a metal layer (218) without damaging the vias, contact, or underlying structures.

Abstract: A tool and method is provided for mixing multiple components and feeding a single blend of the multiple components into the tool. The method includes adjusting a concentration of etchant solution. The method includes determining an etch target for each batch of wafers of a plurality of batches of wafers entering an etch chamber of a wafer processing tool. The method further includes adjusting a concentration of 40% NH4F to 49% HF for the each batch of wafers of the plurality of batches of wafers entering the wafer processing tool during a single run.

Abstract: Disclosed herein is a method for manufacturing a printed circuit board, wherein a protective film for stripping and a metal layer closely adhered to the protective film for stripping are formed on an inner layer pad to protect the inner layer pad at the time of laser processing related to cavity processing and applying an etchant, thereby making it possible to improve reliability of a product.

Abstract: Disclosed method and apparatus embodiments provide a photonic device with optical isolation from a supporting substrate. A generally rectangular cavity in cross section is provided below an element of the photonic device and the element may be formed from a ledge of the supporting substrate which is over the cavity.

Abstract: Methods and apparatus for etching materials using tetramethylammonium hydroxide (TMAH) are described. The methods may involve including an additive when applying the TMAH to the material to be etched. The additive may be a gas, and in some situations may be clean dry air. The clean dry air may be provided with the TMAH to minimize or prevent the formation of hillocks in the etched structure. Apparatus for performing the methods are also described.

Abstract: The present invention provides a process of etching or plating comprising the steps of: i) ink jet printing an alkali removeable water insoluble hot melt ink jet ink onto a substrate to form a resist image; ii) etching or plating the substrate in an aqueous acid medium; and iv) removing the resist image with an aqueous alkali.

Abstract: The present invention relates to a method for selectively etching and patterning with high resolution of flexible polymer matrices, which may comprise Ag nano tubes.

Abstract: A substrate processing apparatus and method includes, a plate that has a size equal to or larger than a principal face of the substrate, and has a horizontal and flat liquid holding face opposing the principal face of the substrate from below. A processing liquid supply unit supplies a processing liquid to the liquid holding face. A control unit controls the processing liquid supply unit and a movement unit to supply the processing liquid to the liquid holding face to form a processing liquid film, a contact step of bringing the principal face of the substrate and the liquid holding face close to each other to bring the principal face of the substrate into contact with the processing liquid film, and a liquid contact maintenance step of maintaining the processing liquid in contact with the principal face of the substrate.

Abstract: Two-part implant for attachment of artificial teeth comprising a base body having a bone contact surface and a soft tissue contact surface. The soft tissue contact surface is at least partially hydroxylated or silanated which results in an improved soft tissue integration.

Abstract: A method and apparatus is disclosed for producing precision marks for a metrological scale in the form of a stainless steel ribbon. A laser is used to produce ultra-short pulses which have a fluence at the ribbon such that ablation takes place. The laser light can be scanned via scanner and the pitch of the marks can be controlled. The ablative technique causes little thermal input and improves the accuracy of the scale.

Abstract: A method for manufacturing a touch screen panel includes reinforcing a glass substrate, the glass substrate to be formed with a plurality of touch screen panels in unit cells, reinforcing the glass substrate including forming a reinforcing layer on an upper and a lower side of the glass substrate by performing a reinforcement treatment on a whole surface of the glass substrate, cutting the reinforced glass substrate in each unit cell, removing a part of the reinforcing layer formed in the upper and the lower side of the glass substrate adjacent to a cut cross section, performing a chemical HF treatment on a cross section of the glass substrate corresponding to the cut cross section and exposing the glass substrate by partially removing the reinforcing layer, and forming a touch screen panel per region of the unit cells, respectively.

Abstract: A cover glass element can extend to the edges of an electronic device while maintaining the optical flatness and thickness needed for the cover glass. A first glass sheet with the desired thickness and flatness can be thermally bonded to a second glass sheet machined to include an opening to be received by the edges of the electronic device. The resulting three-dimensional cover element forms a uni-body frame that is significantly stiffer than a single sheet of glass, and the larger surface area of the edge provides for enhances pressure distribution, particularly after chemical strengthening, thus enhancing the durability of the electronic device. Further, the thermal bonding process uses lower temperatures than processes such as slumping or pressing, which could potentially affect the flatness and optical clarity of the original sheet glass.

Abstract: A film in a dry state is efficiently dissolved and removed. A film removing method includes steps of moving a nozzle head (10B) close to a soluble film (201) formed on a substrate (200), forming a liquid pool (302) of chemical liquid (300) between the nozzle head (10B) and the film (201) by continuously and simultaneously discharging and sucking the chemical liquid (300) from the nozzle head (10B), and horizontally moving the substrate (100) in a state in which the nozzle head (10B) and the surface of the film (201) are not contacted so as to relatively move the liquid pool (302) of the chemical liquid on the substrate (100).

Abstract: A method for renewing an organic solvent includes an ultraviolet irradiation step in which an organic solvent containing a resin is irradiated with ultraviolet rays so as to enhance the ability of the organic solvent to dissolve the resin. A method for using an organic solvent and a method for producing an inkjet recording head utilize the method for renewing an organic solvent.

Abstract: Provided is a fine-processing agent which, when fine-processing a laminated film stacked at least with a silicon dioxide film and a silicon nitride film, can selectively fine-process the silicon dioxide film. Also provided is a fine-processing method utilizing the fine-processing agent. The fine-processing agent is characterized by including: (a) 0.01-15.0 weight % hydrogen fluoride and/or 0.1-40.0 weight % ammonium fluoride, (b) water, and (c) 0.001-10.00 weight % water-soluble polymer selected from among a group consisting of acrylic acid, ammonium acrylate, acrylic acid ester, acrylamide, styrenesulfonic acid, ammonium styrenesulfonate, and styrenesulfonic acid ester.

Abstract: A method for balancing a rotor, notably of a turbomachine, includes a step of determining an unbalancing mass, and a step of balancing by chemical machining of the rotor. The chemical machining includes arranging a bath containing a chemical machining agent so that the bath has a capacity of heterogeneous material removal as a function of the depth in the bath, an amount of material removal at a first depth in the bath is greater than an amount of material removal at a second depth in the bath; immersing the rotor in the bath; and orienting the rotor in the bath taking account of the capacity of heterogeneous material removal so that the quantity of material removed from the rotor in a zone of the unbalancing mass is sufficient to balance the rotor.

Abstract: Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off the liquid remaining on the substrate, a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate, and a temperature decrease suppressing step of supplying, in parallel to the hydrogen peroxide water supplying step, pure water having high temperature to a lower surface of the substrate.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off a liquid remaining on the substrate, and a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate.

Abstract: The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method. The CMP slurry includes a polishing abrasive, a linear anionic polymer, a compound including a phosphoric acid group, and water, and the ratio of CMP polishing speed to a silicon oxide layer: CMP polishing speed to a silicon nitride layer is 30:1 to 50:1.

Abstract: A pattern-forming method includes forming a prepattern on a substrate. A space other than a space in which the prepattern is formed on the substrate is filled with a resin composition containing a compound which is diffusible into the prepattern. The compound is diffused into a part of the prepattern. Portions in which the compound is undiffused in the prepattern are removed using a removing liquid.

Abstract: A method for cleaning a dielectric and metal structure within a microelectronic structure uses an oxygen containing plasma treatment, followed by an alcohol treatment, in turn followed by an aqueous organic acid treatment. Another method for cleaning a dielectric and metal structure within a microelectronic structure uses an aqueous surfactant treatment followed by an alcohol treatment and finally followed by an aqueous organic acid treatment. The former method may be used to clean a plasma etch residue from a dual damascene aperture. The second method may be used to clean a chemical mechanical polish planarizing residue from a dual damascene structure. The two methods may be used sequentially, absent any intervening or subsequent sputtering method, to provide a dual damascene structure within a microelectronic structure.

Abstract: Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

Abstract: Methods to fabricate reaction cartridges for biological sample preparation and analysis are disclosed. A cartridge may have a reaction chamber and openings to allow fluids to enter the chamber. The cartridge may also have handles to facilitate its use. Such cartridges may be used for polymerase chain reaction.

Abstract: The present invention discloses a section of tubing including a fluoropolmer tubular body which has an interior surface defining a fluid passage through the tubular body. At least a first portion of the interior surface has a first hydrophobicity which is less than that of the remainder of the tubular body. At least a first portion of the interior surface can have a molar ratio of fluorine to oxygen of no greater than 30 to 1. Products can include the tubular bodies of the present invention attachable to fluid processing instruments such as immunodiagnostic instruments. The present invention also discloses methods for manufacturing the disclosed tubular bodies.

Abstract: A method of forming at least one curved plate having first and second layers, the first layer being formed of a first material and the second layer being formed of a second material, the method including forming one or more blocks of a fusible material on a surface of a substrate; baking the one or more blocks to deform their shape; and depositing the first and second materials over the one or more deformed blocks to form the first and second layers.

Abstract: Methods of metal assisted chemical etching III-V semiconductors are provided. The methods can include providing an electrically conductive film pattern disposed on a semiconductor substrate comprising a III-V semiconductor. At least a portion of the III-V semiconductor immediately below the conductive film pattern may be selectively removed by immersing the electrically conductive film pattern and the semiconductor substrate into an etchant solution comprising an acid and an oxidizing agent having an oxidation potential less than an oxidation potential of hydrogen peroxide. Such methods can form high aspect ratio semiconductor nanostructures.

Abstract: A method for manufacturing electrical and/or optical components, wherein a hot melt composition including an alkane based wax and an amorphous material as a masking material is used. The hot melt composition has a melting point of between 40° C. and 85° C. and a viscosity of between 5 and 20 mPa·s at not less than one temperature within the range of between 50° C. and 140° C. A hot melt composition includes between 40 weight % and 89.9 weight % of an alkane based wax; between 10 weight % and 50 weight % of an amorphous material; and between 0.1 weight % and 10 weight % of a phosphonium based ionic liquid. A system and a method for manufacturing electronic and/or optical components is provided, wherein after the etch processes and/or plating processes, the hot melt composition is removed from the substrate with the aid of hot water.

Abstract: A method is described for etching ceramic phosphor converters. The method includes contacting a surface of the converter with a solution of phosphor acid for a time sufficient to etch the converter. The method is applicable to ceramic phosphor converters comprising a phosphor having a general formula MxAlyOz:RE wherein M is a metal and RE is a rare earth element.

Abstract: A method for manufacturing a symbol on an exterior of an electronic device is provided. The method includes preparing a support layer, preparing a nanograting layer on the support layer, the nanograting layer including a first nanograting area corresponding to a preset symbol and a second nanograting area corresponding to an area other than the preset symbol, wherein each of the first nanograting area and the second nanograting area includes three-dimensional (3D) nanostructures and a pitch between the 3D nanostructures arranged in the first nanograting area is different from a pitch between the 3D nanostructures arranged in the second nanograting area.

Abstract: A gas bearing seal using porous materials for distribution of gas flow can provide site isolation during wet processing. In some embodiments, a flow cell comprises a porous media gas bearing surrounding a periphery of the flow cell, isolating the liquid inside the flow cell from the ambient air outside the flow cell. In some embodiments, a protective chuck comprises a porous media gas bearing disposed in a middle of the protective chuck, isolating the liquid outside the protective chuck with the gaseous ambient generated by the porous media gas bearing.

Abstract: A method of forming an imaging blanket for a printing apparatus comprises preparing a support structure (e.g., mold) for receipt of a polymer blanket compound, introducing the polymer blanket compound in liquid state over the support structure, curing the polymer blanket compound to produce an imaging blanket, releasing the imaging blanket from the support structure, and etching a surface of the imaging blanket to form a texture pattern therein, the surface forming an imaging surface of said imaging blanket. An imaging surface providing desirable dampening fluid retention is provided. Wet etch, dry etch or a combination of both may be used. The polymer may be a silicone compound, may include 3 percent by weight granular material.