Variable Threshold (e.g., Floating Gate Memory Device) Patents (Class 257/314)
- With additional contacted control electrode (Class 257/316)
- With irregularities on electrode to facilitate charging or discharging of floating electrode (Class 257/317)
- Additional control electrode is doped region in semiconductor substrate (Class 257/318)
- Plural additional contacted control electrodes (Class 257/319)
- With thin insulator region for charging or discharging floating electrode by quantum mechanical tunneling (Class 257/321)
- With charging or discharging by control voltage applied to source or drain region (e.g., by avalanche breakdown of drain junction) (Class 257/322)
- With means to facilitate light erasure (Class 257/323)