Abstract: An electrical device includes a substrate with a compressive layer, a neutral stress buffer layer and a tensile stress compensation layer. The stress buffer layer and the stress compensation layer may each be formed with aluminum nitride using different processing parameters to provide a different intrinsic stress value for each layer. The aluminum nitride tensile layer is configured to counteract stresses from the compressive layer in the device to thereby control an amount of substrate bow in the device. This is useful for protecting fragile materials in the device, such as mercury cadmium telluride. The aluminum nitride stress compensation layer also can compensate for forces, such as due to CTE mismatches, to protect the fragile layer. The device may include temperature-sensitive materials, and the aluminum nitride stress compensation layer or stress buffer layer may be formed at a temperature below the thermal degradation temperature of the temperature-sensitive material.

Abstract: Various embodiments of the present application are directed towards a group III-V device including a rough buffer layer. The rough buffer layer overlies a silicon substrate, a buffer structure overlies the rough buffer layer, and a heterojunction structure overlies the buffer structure. The buffer structure causes band bending and formation of a two-dimensional hole gas (2DHG) in the rough buffer layer. The rough buffer layer includes silicon or some other suitable semiconductor material and, in some embodiments, is doped. A top surface of the rough buffer layer and/or a bottom surface of the rough buffer layer is/are rough to promote carrier scattering along the top and bottom surfaces. The carrier scattering reduces carrier mobility and increases resistance at the 2DHG. The increased resistance increases an overall resistance of the silicon substrate, which reduces substrate loses and increases a power added efficiency (PAE).

Abstract: A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon nitride layer deposited by plasma deposition.

Abstract: A heat discharge structure that includes a film of a nitride of a group 13 element having a first main face, a second main face and an outer side end face. The structure further includes a portion for containing the light source device. The portion has a through hole opening at the first main face and the second main face, and a fixing face for fixing the light source device. The fixing face faces the through hole and contacts the light source device.

Abstract: High yield substrate assembly. In accordance with a first method embodiment, a plurality of piggyback substrates are attached to a carrier substrate. The edges of the plurality of the piggyback substrates are bonded to one another. The plurality of piggyback substrates are removed from the carrier substrate to form a substrate assembly. The substrate assembly is processed to produce a plurality of integrated circuit devices on the substrate assembly. The processing may use manufacturing equipment designed to process wafers larger than individual instances of the plurality of piggyback substrates.

Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.

Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: The present invention discloses a manufacturing method to reduce the surface roughness of the low temperature poly-silicon, including: a surface pretreatment is performed to a substrate with a a-Si layer on it, to form an oxidation layer on the a-Si layer. A first excimer laser annealing is performed on the substrate to make the a-Si layer into a poly-silicon layer; an acid liquid clean is used on the poly-silicon layer to remove the protrusions on the poly-silicon layer; a second excimer laser annealing is performed to the poly-silicon layer to obtain a low temperature poly-silicon layer with lower surface roughness. The manufacturing method is easy to operation and reduce the surface roughness of the low temperature poly-silicon layer with efficiency to obtain a low temperature poly-silicon layer with low roughness, uniform surface and well crystallization. A low temperature poly-silicon layer formed according to the present invention is also provided.

Abstract: Disclosed are a substrate regeneration method and a regenerated substrate. The substrate regeneration method comprises preparing a substrate having a surface separated from an epitaxial layer. The separated surface includes a convex portion and a concave portion, and the convex portion is comparatively flatter than the concave portion. A crystalline restoration layer is grown on the separated surface. The crystalline restoration layer is grown on the convex portion. Furthermore, a surface roughness improvement layer is grown on the crystalline restoration layer, thereby providing a continuous surface. Accordingly, it is possible to provide a regenerated substrate, which has a flat surface, without using physical polishing or chemical etching technology.

Abstract: Provided is a composite substrate manufacturing method, including at least: a first raw board deforming step of preparing a first substrate by deforming a first raw board having at least one surface as a minor surface into a state in which the minor surface warps outward; and a joining step of joining, after the first raw board deforming step, a protruding surface of the first substrate and one surface of a second substrate to each other, thereby manufacturing a composite substrate including the first substrate and the second substrate, in which the second substrate is any one substrate selected from a substrate having both surfaces as substantially flat surfaces and a substrate that warps so that a surface thereof to be joined to the first substrate warps outward. Also provided are a semiconductor element manufacturing method, a composite substrate and a semiconductor element manufactured.

Abstract: A process of fabricating a flexible TFT back-panel on a glass support includes a step of providing a flat glass support member sufficiently thick to prevent bending during the processing. A layer of etch stop material is positioned on the upper surface of the glass support member and an insulating buffer layer is positioned on the layer of etch stop material. A TFT back-panel is positioned on the insulating buffer layer and a flexible plastic carrier is affixed to the TFT back-panel. The glass support member is etched away, whereby a flexible TFT back-panel is provided. The TFT back-panel can include a matrix of either OLED cells or LCD cells.

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm?2.

Abstract: To provide a light-emitting device including the plurality of light-emitting elements having a structure in which a light-emitting area is large and defects in patterning of light-emitting elements are suppressed. To provide a lighting device including the light-emitting device. The light-emitting device includes a first wiring provided over a substrate having an insulating surface, an insulating film provided over the first wiring, a second wiring provided over the insulating film, and a light-emitting element unit including a plurality of light-emitting elements provided over the first wiring with the insulating film provided therebetween. The plurality of light-emitting elements each include a first electrode layer having a light-blocking property, a layer containing an organic compound in contact with the first electrode layer, and a second electrode layer having a light-transmitting property in contact with the layer containing an organic compound.

Abstract: A method of forming an integrated circuit structure includes forming an insulation layer over at least a portion of a substrate; forming a plurality of semiconductor pillars over a top surface of the insulation layer. The plurality of semiconductor pillars is horizontally spaced apart by portions of the insulation layer. The plurality of semiconductor pillars is allocated in a periodic pattern. The method further includes epitaxially growing a III-V compound semiconductor film from top surfaces and sidewalls of the semiconductor pillars.

Abstract: A method for manufacturing trench type super junction device is disclosed. The method includes the step of forming one or more P type implantation regions in the N type epitaxial layer below the bottom of each trench. By using this method, a super junction device having alternating P type and N type regions is produced, wherein the P type region is formed by P type silicon filled in the trench and P type implantation regions below the trench. The present invention can greatly improve the breakdown voltage of a super junction MOSFET.

Abstract: Provided is a method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001}, designated by choice, the III-nitride crystal manufacturing method including: a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation; a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; and a step of growing III-nitride crystal onto the major surfaces of the substrates.

Abstract: Semiconductor alloy fin structures can be formed by recessing a semiconductor material layer including a first semiconductor material to form a trench, and epitaxially depositing a semiconductor alloy material of the first semiconductor material and a second semiconductor material within the trench. The semiconductor alloy material is epitaxially aligned to the first semiconductor material in the semiconductor material layer. First semiconductor fins including the first semiconductor material and second semiconductor fins including the semiconductor alloy material can be simultaneously formed. In one embodiment, the first and second semiconductor fins can be formed on an insulator layer, which prevents diffusion of the second semiconductor material to the first semiconductor fins. In another embodiment, shallow trench isolation structures and reverse biased wells can be employed to provide electrical insulation among neighboring semiconductor fins.

Abstract: According to one embodiment, a semiconductor device includes an element region partitioned by an isolation region in a semiconductor substrate, and a source region and a drain region formed in a surface layer of the element region by being isolated by a gate trench along a predetermined direction across the element region. The semiconductor device includes a gate electrode formed to reach a position deeper than the source region and the drain region by embedding at least part thereof in the gate trench with a gate dielectric film interposed therebetween. An interface in the drain region, which is in contact with the gate dielectric film, includes a projection projecting toward the gate electrode side.

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm?2.

Abstract: (a) Forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids. (b) Forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids. (c) Forming on the n-type layer an active layer made of a group III nitride compound semiconductor. (d) Forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor. (e) Bonding a support substrate above the p-type layer. (f) Peeling off the growth substrate at the boundary where the void are produced. (g) Planarizing the n-type layer. Step (b) comprises (b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak and (b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong.

Abstract: The disclosure provides a method for fabricating a semiconductor layer having a textured surface, including: (a) providing a textured substrate; (b) forming at least one semiconductor layer on the textured substrate; (c) forming a metal layer on the semiconductor layer; and (d) conducting a thermal process to the textured substrate, the semiconductor layer and the metal layer, wherein the semiconductor layer is separated from the textured substrate by the thermal process to obtain the semiconductor layer having the metal layer and a textured surface.

Abstract: A semiconductor device and a method of manufacturing the same are disclosed. In one embodiment, the semiconductor device includes a substrate, a first silicon nitride layer formed over the substrate, a first silicon oxide layer formed directly on the first silicon nitride layer and having a thickness of about 1000 ? or less, and a hydrogenated polycrystalline silicon layer formed directly on the first silicon oxide layer.

Abstract: A GaN substrate storage method of storing, within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3, a GaN substrate (1) having a planar first principal face (1m), and whose plane orientation in an arbitrary point (P) along the first principal face (1m) and separated 3 mm or more from the outer edge thereof has an off-inclination angle ?? of ?10° or more, 10° or less with respect to the plane orientation of an arbitrarily designated crystalline plane (1a) that is inclined 50° or more, 90° or less with respect to a plane (1c), being either the (0001) plane or the (000 1) plane, through the arbitrary point. In this way a method of storing GaN substrates whose principal-face plane orientation is other than (0001) or (000 1), with which semiconductor devices of favorable properties can be manufactured is made available.

Abstract: A method for treating the threading dislocation within a GaN-containing semiconductor layer is provided. The method includes a substrate is provided. A GaN-containing semiconductor layer with the threading dislocation is formed on the substrate. An etching process with an etching gas is performed to remove the threading dislocation in the GaN-containing semiconductor layer so as to increase the efficiency for the light emitting device.

Abstract: The present invention provides an SOI semiconductor structure with a hybrid of coplanar germanium (Ge) and III-V, and a method for preparing the same. A heterogeneous integrated semiconductor structure with a hybrid of Ge and the group III-V semiconductor material coplanar on an insulator includes at least one Ge substrate formed on the insulating layer, and the other substrate is a group III-V semiconductor material formed on the Ge semiconductor.

Abstract: A substrate is provided with a main surface having an off angle of 5° or smaller relative to a reference plane. The reference plane is a {000-1} plane in the case of hexagonal system and is a {111} plane in the case of cubic system. A silicon carbide layer is epitaxially formed on the main surface of the substrate. The silicon carbide layer is provided with a trench having first and second side walls opposite to each other. Each of the first and second side walls includes a channel region. Further, each of the first and second side walls substantially includes one of a {0-33-8} plane and a {01-1-4} plane in the case of the hexagonal system and substantially includes a {100} plane in the case of the cubic system.

Abstract: A method of manufacturing a free-standing gallium nitride (GaN) substrate, by which a free-standing GaN substrate can be manufactured without warping or cracks. The method includes the steps of collecting polycrystalline GaN powder that is deposited in a reactor or on a susceptor in a process of growing single crystalline GaN, loading the collected polycrystalline GaN powder into a forming mold, preparing a polycrystalline GaN substrate by sintering the loaded polycrystalline GaN powder, and forming a single crystalline GaN layer by growing single crystalline GaN over the polycrystalline GaN substrate. It is possible to reduce warping and cracks that are caused, due to the difference in the coefficient of thermal expansion, during the growth or cooling of single crystalline GaN in the process of manufacturing the free-standing GaN substrate.

Abstract: A semiconductor thin-film manufacturing method includes: forming, above a substrate, an amorphous silicon film (precursor film) having a photoluminescence (PL) intensity greater than or equal to 0.65 when photon energy is 1.1 eV in a PL spectrum normalized to have a maximum PL intensity of 1; and annealing the amorphous silicon film to form a crystalline silicon film.

Abstract: A multi junction solar cell having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The solar cell includes an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by the AlAs nucleating layer. The AlAs nucleating layer provides improved morphology of the solar cell and a means to control the position of a p-n junction near the surface of the group IV substrate through diffusion of As and/or P and near the bottom of the III/V structure through minimized diffusion of the group IV element.

Abstract: A silicon carbide substrate capable of reducing on-resistance and improving yield of semiconductor devices is made of single-crystal silicon carbide, and sulfur atoms are present in one main surface at a ratio of not less than 60×1010 atoms/cm2 and not more than 2000×1010 atoms/cm2, and oxygen atoms are present in the one main surface at a ratio of not less than 3 at % and not more than 30 at %.

Abstract: A crystalline structure comprising a substrate, which has a surface. The surface has one or more wells formed therein defining one or more growing area and at least one layer of dissimilar crystalline material epitaxially grown on the growing area. A method of making a crystalline structure having a low threading dislocation density comprising the steps of (a) patterning a surface of a substrate material such that one or more wells defining a growing area is formed therein; and (b) epitaxially growing at least one strained layer of dissimilar crystalline material on the growing area of the surface of the substrate material, such that the threading dislocation density of the at least one strained layer is reduced by the one or more wells.

Abstract: A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.

Abstract: A method of forming a semiconductor device is provided, in which extension regions are formed atop the substrate in a vertical orientation. In one embodiment, the method includes providing a semiconductor substrate doped with a first conductivity dopant. Raised extension regions are formed on first portions of the semiconductor substrate that are separated by a second portion of the semiconductor substrate. The raised extension regions have a first concentration of a second conductivity dopant. Raised source regions and raised drain regions are formed on the raised extension regions. The raised source regions and the raised drain regions each have a second concentration of the second conductivity dopant, wherein the second concentration is greater than the first concentration. A gate structure is formed on the second portion of the semiconductor substrate.

Abstract: A glass ribbon coated with a flexible material, the flexible coating forming a flexible web portion that extends from an edge of the glass ribbon at least one millimeter. The flexible web portion can be used to facilitate handling of the glass ribbon in a manufacturing process, and may include registration markings, or perforations, that further facilitate precise positioning of the ribbon.

Abstract: The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal (20) having a major surface (20m) of plane orientation other than {0001}, designated by choice, includes: a step of slicing III-nitride bulk crystal (1) into a plurality of III-nitride crystal substrates (10p), (10q) having major surfaces (10pm), (10qm) of the designated plane orientation; a step of disposing the substrates (10p), (10q) adjoining each other sideways in such a way that the major surfaces (10pm), (10qm) of the substrates (10p), (10q) parallel each other and so that the [0001] directions in the substrates (10p), (10q) are oriented in the same way; and a step of growing III-nitride crystal (20) onto the major surfaces (10pm), (10qm) of the substrates (10p), (10q).

Abstract: A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as ruthenium, rhodium, and iridium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.

Abstract: Affords a method of storing GaN substrates from which semiconductor devices of favorable properties can be manufactured, the stored substrates, and semiconductor devices and methods of manufacturing the semiconductor devices. In the GaN substrate storing method, a GaN substrate (1) is stored in an atmosphere having an oxygen concentration of 18 vol. % or less, and/or a water-vapor concentration of 12 g/m3 or less. Surface roughness Ra of a first principal face on, and roughness Ra of a second principal face on, the GaN substrate stored by the storing method are brought to no more than 20 nm and to no more than 20 ?m, respectively. In addition, the GaN substrates are rendered such that the principal faces form an off-axis angle with the (0001) plane of from 0.05° to 2° in the <1 100> direction, and from 0° to 1° in the <11 20> direction.

Abstract: A semiconductor system having a trench MOS barrier Schottky diode is described, including an n-type epitaxial layer, in which at least two etched trenches are located in a two-dimensional manner of presentation on an n+-type substrate which acts as the cathode zone. An electrically floating, p-type layer, which acts as the anode zone of the p-n type diode, is located in the n-type epitaxial layer, at least in a location below the trench bottom. An oxide layer is located between a metal layer and the surface of the trenches. The n-type epitaxial layer may include two n-type layers of different doping concentrations.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer on a first side of a first silicon wafer. The first silicon wafer has a second side opposite the first side. The first layer has a coefficient-of-thermal-expansion (CTE) that is lower than that of silicon. The method includes bonding the first wafer to a second silicon wafer in a manner so that the first layer is disposed in between the first and second silicon wafers. The method includes removing a portion of the first silicon wafer from the second side. The method includes forming a second layer over the second side of the first silicon wafer. The second layer has a CTE higher than that of silicon.

Abstract: A method of manufacturing a semiconductor wafer, the method comprising: a first monocrystalline layer comprising semiconductor regions, overlaying the first monocrystalline layer with an isolation layer; preparing a second monocrystalline layer comprising semiconductor regions overlying the isolation layer; and etching portions of the first monocrystalline layer as part of forming at least one transistor on said first monocrystalline layer.

Abstract: An efficient and low-cost method is intended for forming a flexible nanostructured material suitable for use as an active element of a photovoltaic panel. The method consists of evaporating a colloidal solution, which contains nanoparticles of various sizes and/or masses, from a flat surface of a rotating body on which the solution forms a thin and easily vaporizable layer, and simultaneously releasing the nanoparticles from the solution for their free flight through a gaseous medium toward the flexible substrate. As a result, the particles of different sizes and/or types of material are deposited onto the flexible substrate in a predetermined sequence that corresponds to the magnitude of resistance experienced by the nanoparticles during their free flight.

Abstract: A method for forming a nanowire field effect transistor (FET) device including forming a first silicon on insulator (SOI) pad region, a second SOI pad region, a third SOI pad region, a first SOI portion connecting the first SOI pad region to the second SOI pad region, and a second SOI portion connecting the second SOI pad region to the third SOI pad region on a substrate, patterning a first hardmask layer over the second SOI portion, forming a first suspended nanowire over the semiconductor substrate, forming a first gate structure around a portion of the first suspended nanowire, patterning a second hardmask layer over the first gate structure and the first suspended nanowire, removing the first hardmask layer, forming a second suspended nanowire over the semiconductor substrate, forming a second gate structure around a portion of the second suspended nanowire, and removing the second hardmask layer.

Abstract: Electronic and opto-electronic devices having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The devices include an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by the AlAs nucleating layer. The AlAs nucleating layer provides improved morphology of the devices and a means to control the position of a p-n junction near the surface of the group IV substrate through diffusion of As and/or P and near the bottom of the III/V structure through minimized diffusion of the group IV element.

Abstract: A substrate has at least one recess and/or protrusion formed in and/or on a surface thereof so as to scatter or diffract light generated in an active layer. The recess and/or protrusion is formed in such a shape that can reduce crystalline defects in semiconductor layers.

Abstract: A radiation-hardened semiconductor structure including an insulator material doped with at least one of a transition metal, a lanthanide, and an actinide, and a semiconductor material located over the insulator material. A semiconductor device including the radiation-hardened semiconductor structure is also disclosed as are method of forming the radiation-hardened semiconductor structure and the semiconductor device.

Abstract: Manufacturing semiconductor heterostructures by way of molecular beam epitaxy, including placing a substrate into a first vacuum chamber, heating the substrate to a first temperature, depositing from at least one molecular beam a first epitaxial layer of a first material containing a binary, ternary or quaternary compound of elements of main group III and V, cooling the substrate to a second temperature, interrupting the molecular beam by elements of main group III and V, heating the substrate to a third temperature and depositing from at least one molecular beam a second epitaxial layer of a second material containing a binary, ternary, or quaternary compound of elements of main group III and V and that is deposited from at least one molecular beam; and semiconductor components produced thereby.

Abstract: A method of forming a strained semiconductor-on-insulator (SSOI) substrate that does not include wafer bonding is provided. In this disclosure a relaxed and doped silicon layer is formed on an upper surface of a silicon-on-insulator (SOI) substrate. In one embodiment, the dopant within the relaxed and doped silicon layer has an atomic size that is smaller than the atomic size of silicon and, as such, the in-plane lattice parameter of the relaxed and doped silicon layer is smaller than the in-plane lattice parameter of the underlying SOI layer. In another embodiment, the dopant within the relaxed and doped silicon layer has an atomic size that is larger than the atomic size of silicon and, as such, the in-plane lattice parameter of the relaxed and doped silicon layer is larger than the in-plane lattice parameter of the underlying SOI layer.

Abstract: A method for manufacturing trench type super junction device is disclosed. The method includes the step of forming one or more P type implantation regions in the N type epitaxial layer below the bottom of each trench. By using this method, a super junction device having alternating P type and N type regions is produced, wherein the P type region is formed by P type silicon filled in the trench and P type implantation regions below the trench. The present invention can greatly improve the breakdown voltage of a super junction MOSFET.

Abstract: A method of forming a semiconductor device includes forming a buried oxide (BOX) layer on a semiconductor substrate, forming a silicon-on-insulator (SOI) layer on the BOX layer, depositing a hard mask including one of silicon, a nitride, and a metal oxide on the SOI layer, removing the hard mask from a first region of the semiconductor device, performing a cleaning process on the semiconductor device, wherein the hard mask is not removed from a second region of the semiconductor device by the cleaning process, epitaxially growing a semiconductor material in the first region of the semiconductor device, and removing the hard mask from the second region of the semiconductor device.