Device Comprising Three Or More Electrodes (epo) Patents (Class 257/E21.369)
E Subclasses
- Heterojunction transistor (EPO) (Class 257/E21.371)
- Bipolar thin film transistor (EPO) (Class 257/E21.372)
- Lateral transistor (EPO) (Class 257/E21.373)
- Schottky transistor (EPO) (Class 257/E21.374)
- Silicon vertical transistor (EPO) (Class 257/E21.375)
- Planar transistor (EPO) (Class 257/E21.376)
- Mesa-planar transistor (EPO) (Class 257/E21.377)
- Inverse transistor (EPO) (Class 257/E21.378)
- With single crystalline emitter, collector or base including extrinsic, link or graft base formed on th e silicon substrate, e.g., by epitaxy, recrystallization, after insulating device isolation (EPO) (Class 257/E21.379)
- Where main current goes through whole of silicon substrate, e.g., power bipolar transistor (EPO) (Class 257/E21.38)
- Field-effect controlled bipolar-type transi stor, e.g., insulated gate bipolar transistor (IGBT) (EPO) (Class 257/E21.382)
- Active layer, e.g., base, is Group III-V compound (EPO) (Class 257/E21.386)