Abstract: A photonic crystal surface emission laser includes an active layer, and a photonic crystal layer made of a plate-shaped slab provided with modified refractive index area having a refractive index different from that of the slab, the modified refractive index areas being arranged on each of the lattice points of a first rhombic-like lattice and a second rhombic-like lattice in which both diagonals are mutually parallel and only one diagonal is of a different length, wherein ax1, ax2, ay, and n satisfy the following inequality: ? 1 a x ? ? 1 - 1 a x ? ? 2 ? ( 1 a x ? ? 1 + 1 a x ? ? 2 ) 2 + ( 2 a y ) 2 ? 1 n .

Abstract: An optical semiconductor device includes: a semiconductor substrate; a semiconductor laser part on the semiconductor substrate and having a vertical ridge; and an optical modulator part on the semiconductor substrate, having an inverted-mesa ridge, and modulating light emitted by the semiconductor laser part.

Abstract: A method of manufacturing a semiconductor optical device including a semiconductor layer includes: forming a semiconductor layer; forming a first dielectric film on a first region of a surface of the semiconductor layer; forming a second dielectric film on a second region of the surface of the semiconductor layer, the second dielectric film having a density higher than that of the first dielectric film; and performing a thermal treatment in a predetermined temperature range after the second dielectric film forming, wherein within the temperature range, as the temperature is lowered, a difference increases between a bandgap in the semiconductor layer below the second dielectric film and a bandgap in the semiconductor layer below the first dielectric film due to the thermal treatment.

Abstract: Carbon nanotube (CNT)-based devices and technology for their fabrication are disclosed. The planar, multiple layer deposition technique and simple methods of change of the nanotube conductivity type during the device processing are utilized to provide a simple and cost effective technology for large scale circuit integration. Such devices as p-n diode, CMOS-like circuit, bipolar transistor, light emitting diode and laser are disclosed, all of them are expected to have superior performance then their semiconductor-based counterparts due to excellent CNT electrical and optical properties. When fabricated on semiconductor wafers, the CNT-based devices can be combined with the conventional semiconductor circuit elements, thus producing hybrid devices and circuits.

Abstract: A semiconductor laser device includes: a substrate having a principal plane; a photonic crystal layer having an epitaxial layer of gallium nitride formed on substrate in a direction in which principal plane extends and a low refractive index material having a refractive index lower than that of epitaxial layer; an n-type clad layer formed on substrate; a p-type clad layer formed on substrate; an active layer that is interposed between n-type clad layer and p-type clad layer and emits light when a carrier is injected thereinto; and a GaN layer that covers a region directly on photonic crystal layer. Thus, the semiconductor laser device can be manufactured without fusion.

Abstract: Described are embodiments of apparatuses and systems including a hybrid laser including anti-resonant waveguides, and methods for making such apparatuses and systems. A hybrid laser apparatus may include a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor, and a second semiconductor region coupled with the first semiconductor region and having an optical waveguide, a first trench disposed on a first side of the optical waveguide, and a second trench disposed on a second side, opposite the first side, of the optical waveguide. Other embodiments may be described and/or claimed.

Abstract: An optical device includes a ridge semiconductor laser element formed on a substrate, a first insulating film coating a lateral wall portion of a ridge structure of the ridge semiconductor laser element, and a second insulating film coating the ridge structure from above the first insulating film in an end portion region of the ridge structure. The second insulating film has a density lower than a density of the first insulating film.

Abstract: Controlled-impedance out-of-substrate package structures employing electrical devices and related assemblies, components, and methods are disclosed. An out-of-substrate package structure may be used to electrically couple an electrical device to an electrical substrate, for example a printed circuit board. The out-of-substrate package structure may be electrically coupled to the electrical substrate. Ground paths of the out-of-substrate package structure may be arranged proximate to the electrical device and arranged symmetric with respect to at least one geometric plane intersecting the electrical device. In this regard, electric field lines generated by current flowing into the electrical device tend to terminate at the return or ground paths allowing for impedance to be more easily controlled. Accordingly, the out-of-substrate package structure may be impedance matched in a better way with respect to power provided from the electrical substrate enabling faster electrical device speeds.

Abstract: Provided are a semiconductor laser manufacturing method and a semiconductor laser with a low device resistance. First, an active layer is deposited above a GaN substrate of a first conductivity type. A first guide layer made of GaN of a second conductivity type is deposited above the active layer. An AlN layer is deposited on the first guide layer. An opening is formed in the AlN layer. A first cladding layer made of a group-III nitride semiconductor of the second conductivity type is formed on the AlN layer and the first guide layer exposed through the opening such that a first growth rate at a start of growth on the first guide layer exposed through the opening becomes greater than a second growth rate at a start of growth on the AlN layer. A contact layer of the second conductivity type is formed on the first cladding layer.

Abstract: A regenerative amplifier according to one aspect of this disclosure is used in combination with a laser device, and the regenerative amplifier may include: a pair of resonator mirrors constituting an optical resonator; a slab amplifier provided between the pair of the resonator mirrors for amplifying a laser beam with a predetermined wavelength outputted from the laser device; and an optical system disposed to configure a multipass optical path along which the laser beam is reciprocated inside the slab amplifier, the optical system transferring an optical image of the laser beam at a first position as an optical image of the laser beam at a second position.

Abstract: A semiconductor laser includes: a first reflector that is provided in a gain region and has a sampled grating in which a plurality of segments are combined; and a second reflector that is optically connected to the first reflector and has a sampled grating in which a plurality of segments are combined, the plurality of segments of the first reflector having a short-segment region and a long-segment region, the long-segment region having an optical length that is larger than that of the short-segment region and being positioned closer to the second reflector than at least one of the short-segment region, the optical length of the long-segment region being larger than that of the short-segment region in a range of integral multiple (n?1) plus-minus 25% of the optical length of the short-segment.

Abstract: A semiconductor light emitting device includes a nitride semiconductor layer, an insulating film, a first electrode, and a second electrode which are provided on a substrate. The nitride semiconductor layer includes a second cladding layer having a stripe-shaped ridge. The insulating film is provided on a portion of the second cladding layer including the at least one ridge. The first electrode is provided to contact the upper surface of the ridge. The second electrode is provided to contact the upper surface of the first electrode, the upper surface of the insulating film, and a portion of the second cladding layer exposed from the insulating film.

Abstract: Disclosed herein is a semiconductor laser element including: on a substrate, a laser structure section configured to include a semiconductor laminated structure having an n-type semiconductor layer, active layer and p-type semiconductor layer in this order, and a p-side electrode on top of the p-type semiconductor layer; a pair of resonator edges provided on two opposed lateral sides of the semiconductor laminated structure; and films made of a non-metallic material having a thermal conductivity higher than that of surrounding gas, and provided in the region of the top side of the laser structure section including the positions of the resonator edges.

Abstract: This provides a semiconductor laser device of a high light output efficiency, which is high in current confinement effect, small in leak current, and favorable in temperature property, and indicates a low threshold current, and can effectively confine laser light to a stripe region, and is favorable in beam profile. This semiconductor laser device includes the laminated structure of an n-AlInP clad layer, a superlattice active layer section, a p-AlInP first clad layer, a GaInP etching stop layer are formed, and on top of that, there are a p-AlInP second clad layer, a GaInP protective layer and a p-GaAs contact layer, which are processed into a stripe-shaped ridge. A p-side electrode is directly coated and formed on the etching stop layer of ridge top surface.

Abstract: A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.

Abstract: In one example embodiment, a DFB laser includes a substrate; an active region positioned above the substrate; a grating layer positioned above the active region, the grating layer including a portion that serves as a primary etch stop layer; a secondary etch stop layer positioned above the grating layer; and a spacer layer interposed between the grating layer and the secondary etch stop layer.

Abstract: A nitride semiconductor laser diode comprises a substrate; an n-side nitride semiconductor layer containing an n-type impurity and disposed on the substrate; an active layer having a light emitting layer including InxAlyGa1?x?yN (0<x<1, 0?y<1, and 0<x+y<1) and disposed on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer containing a p-type impurity and disposed on the active layer. The lasing wavelength of the nitride semiconductor laser diode is 500 nm or greater.

Abstract: A laser diode device is specified, comprising a housing having a mounting part and a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, wherein the laser diode chip is mounted directly on the mounting part using a solder layer, and the solder layer has a thickness of greater than or equal to 3 ?m.

Abstract: A p-type cladding layer (3) of p-type semiconductor is formed over a substrate. An active layer (5) including a p-type semiconductor region is disposed over the p-type cladding layer. A buffer layer (10) of non-doped semiconductor is disposed over the active layer. A ridge-shaped n-type cladding layer (11) of n-type semiconductor is disposed over a partial surface of the buffer layer. The buffer layer on both sides of the ridge-shaped n-type cladding layer is thinner than the buffer layer just under the ridge-shaped n-type cladding layer.

Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.

Abstract: A housing for an optoelectronic semiconductor component includes a housing body having a mounting plane and a leadframe with a first connection conductor and a second connection conductor. The housing body deforms the leadframe in some regions. The leadframe has a main extension plane which extends obliquely or perpendicularly with respect to the mounting plane. A semiconductor component having such a housing and a semiconductor chip and a method for producing a housing are also disclosed.

Abstract: The laser includes an amplifier with III-V heterostructure, designed to generate an optical wave, and a waveguide coupled optically to the amplifier, said waveguide having a hat-shaped cross section, the top of which is proximal to the amplifier. The top of the hat and the lateral sides of the hat are covered with a layer of a dielectric material in the vicinity of the amplifier. The hat is formed by a base and a protrusion of the waveguide, the material forming the base being distinct from the material forming the protrusion.

Abstract: Optoelectronic devices have a photoactive region containing semiconductor material doped with ions of a rare earth element. Characteristic transitions associated with internal energy states of the rare earth dopant ions are modified by direct interaction of those states with an energy state in the semiconductor band structure. Eu+ and Yb+ doped silicon LEDs and photodetectors are described. The LEDs are emissive of radiation in the wavelength range 1300 nm to 1600 nm, important in optical communications.

Abstract: A laser emitting chip package includes a circuit board, a laser emitting chip, and at least three gold balls. The circuit board includes at least two substrate-pad areas. The laser emitting chip includes at least two chip-pad areas. Each of the chip-pad areas spatially corresponds to a respective one of the substrate-pad areas. The at least three gold balls are explanted on the at least two chip-pad areas. The laser emitting chip is supported on the circuit board by the at least three gold balls in a triangular or square arrangement between the chip-pad areas and the substrate-pad areas. The laser emitting chip is electrically connected to the circuit board through the gold balls.

Abstract: A laser apparatus configured for epitaxial-side-down mounting on a heat sink. The laser apparatus includes a semiconductor laser structure and at least one post on a substrate where the laser structure and post are separated from each other by a channel. The laser structure and the posts optionally are coated with a heat-spreading material layer and are configured so that the maximum height of the posts is about the same as the maximum height of the laser structure. When the laser apparatus is mounted to a heat sink in an epi-down configuration using solder applied to the top of the laser structure and the at least one post, the channels between the at least one post and the laser structure provide a relief flow path for the solder and ensure that the laser structure does not come directly into contact with the solder.

Abstract: A surface emitting semiconductor laser includes a substrate, a first semiconductor multi-layer reflector formed on the substrate and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, a semi-insulating i type AlGaAs layer formed on the first semiconductor multi-layer reflector, an n type semiconductor layer formed on the AlGaAs layer, an active region formed on the semiconductor layer, a p type second semiconductor multi-layer reflector formed on the active region and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, an n side first electrode electrically connected to the semiconductor layer, and a p side second electrode electrically connected to the second semiconductor multi-layer reflector.

Abstract: A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.

Abstract: A method for producing an optoelectronic semiconductor component includes: epitaxially growing a semiconductor layer sequence including an active layer on a growth substrate, shaping a front facet at the semiconductor layer sequence and the growth substrate, coating a part of the front facet with a light blocking layer for radiation generated in the finished semiconductor component, wherein the light blocking layer is produced by a directional coating method and the light blocking layer is structured during coating by shading by the growth substrate and/or by at least one dummy bar arranged at and/or alongside the growth substrate.

Abstract: An edge-emitting semiconductor laser diode includes an epitactic semiconductor layer stack and a planarization layer. The semiconductor layer stack includes a main body and a ridge waveguide. The main body includes an active layer for generating electromagnetic radiation. The planarization layer embeds the ridge waveguide such that a surface of the ridge waveguide and a surface of the planarization layer form a flat main surface. A method for producing such a semiconductor laser diode is also disclosed.

Abstract: A method of manufacturing a surface-emitting laser that allows precise alignment of the center position of a surface relief structure and that of a current confinement structure and formation of the relief structure by means of which a sufficient loss difference can be introduced between the fundamental transverse and higher order transverse mode. Removing the dielectric film on the semiconductor layers and the first-etch stop layer along the second pattern, using a second- and third-etch stop layer are conducted in single step after forming the confinement structure. The relief structure is formed by three layers including a lower, middle and upper layer, and total thickness of three layers is equal to the optical thickness of an odd multiple of ¼ wavelength (?: oscillation wavelength, n: refractive index of the semiconductor layer). The layer right under the lower layer is the second-etch stop layer and the first-etch stop layer is laid right on this etch stop layer.

Abstract: An apparatus for providing a light beam has a solid-state laser to emit a polarized input laser light beam that has a first aspect ratio of etendue R1. First and second cylindrical lenses collimate the light along orthogonal directions. An edge of a bisecting reflective surface splits the laser light beam into a first portion directed along a first beam path and a second portion along a second beam path, wherein the first and second beam paths each contain emitted light from the solid-state laser. One or more folding reflective surfaces are disposed along the first or second or both beam paths. A polarization rotator rotates polarization of the light along the second beam path. A polarization combiner combines light from the first and second beam paths to form an output beam, wherein the output beam has a second aspect ratio of etendue R2 not equal to R1.

Abstract: A nitride semiconductor laser diode includes a substrate, an n-side nitride semiconductor layer formed on the substrate, an active layer formed on the n-side nitride semiconductor layer and having a light emitting layer including InxAlyGa1-x-yN (0<x<1, 0 y<1, 0<x+y<1), and a p-side nitride semiconductor layer formed on the active layer.

Abstract: It is the object of the present invention to specify a light source with high efficiency and high eye safety at the same time. For this purpose, the active layer (10), the first cladding layer (14), the first waveguide layer (12), the second waveguide layer (16), and the second cladding layer (18) should be designed such that 0.01 ?m?dWL?1.0 ?m and ?n?0.04, where dWL is the sum total of the layer thickness of the first waveguide layer (12), the layer thickness of the active layer (10), and the layer thickness of the second waveguide layer (16) and ?n is a maximum of the refractive index difference between the first cladding layer (14) and the first waveguide layer (12) and the refractive index difference between the second waveguide layer (16) and the second cladding layer (18).

Abstract: A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of Inx1Aly1Ga1-x1-y1N, where x1>0 and y1>0, the second cladding layer being made of Inx2Aly2Ga1-x2-y2N, where0?x2?about 0.02 and about 0.03?y2?about 0.07.

Abstract: Hybrid plasmonic waveguides are described that employ a high-gain semiconductor nanostructure functioning as a gain medium that is separated from a metal substrate surface by a nanoscale thickness thick low-index gap. The waveguides are capable of efficient generation of sub-wavelength high intensity light and have the potential for large modulation bandwidth >1 THz.

Abstract: A multi-beam semiconductor laser apparatus includes three or more stripe semiconductor laser emission units which are arranged on a substrate, isolation grooves which separate the semiconductor laser emission units from each other, and pad electrodes which are disposed on outer sides of the outermost semiconductor laser emission units. The isolation grooves are formed between the pad electrodes and the semiconductor laser emission units adjacent to the pad electrodes and between adjacent semiconductor laser emission units. A distance between two isolation grooves formed on outer sides of the outermost semiconductor laser light emission units is smaller than a distance between two isolation grooves formed on both sides of inner ones of the semiconductor laser light emission units.

Abstract: Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.

Abstract: A light (2) emitting system (1) includes an optical cavity (10) having at least one optical mode and including at least one transmissive reflector (12), a first set (20) of quantum wells (21, 22) and elements (31, 32, 33) of electrical injection of the quantum wells of the first set. The quantum wells of the first set are arranged so that at least one of their electronic resonances is a strong coupling regime with an optical mode of the optical cavity and emits a light according to a mixed exciton-polariton mode. The optical cavity further includes a second set (40) of quantum wells (41, 42, 43, 44, 45) arranged outside of the direct range of the elements of electrical injection and arranged in relation to the quantum wells of the first set so that at least one of their electronic resonances is in a strong coupling regime with the mixed exciton-polariton mode of the optical cavity.

Abstract: A semiconductor laser includes: a semiconductor layer including an active layer and a ridge portion, the ridge portion facing a current injection region of the active layer; and an embedded film covering a side surface of the ridge portion and a top surface of the semiconductor layer, wherein the embedded film includes a first layer configured of a silicon oxide film, a second layer made of a silicon compound having a refractive index lower than that of the active layer and having a silicon content higher than a stoichiometric ratio, and a third layer made of an inorganic insulating material in this order of closeness to the ridge portion and the semiconductor layer.

Abstract: A waveguide-type optical semiconductor device includes a substrate with a main surface; a structure including a stacked semiconductor layer including a core layer provided on the main surface of the substrate, a stripe-shaped mesa portion protruding in a first direction orthogonal to the main surface and extending in a second direction parallel to the main surface, and a pair of stripe-shaped grooves defining the stripe-shaped mesa portion and extending in the second direction; a protrusion provided in the pair of stripe-shaped grooves, the protrusion protruding from the structure in the first direction; and a resin portion covering a side face of the protrusion, the resin portion being buried in the stripe-shaped grooves. The relative position of the protrusion with respect to the structure is fixed. In addition, the side face of the protrusion intersects with the second direction when viewed from the first direction.

Abstract: A laser light source apparatus is provided that can prevent an output mirror from breaking and can simplify adjustment of the attachment position of the output mirror. The laser light source apparatus includes: a semiconductor laser that outputs an excitation laser beam; a solid-state laser element that is excited by the excitation laser beam, to output a fundamental laser beam; and an output mirror that forms a resonator together with the solid-state laser element. The output mirror includes: a base part formed of a glass substrate; a convex part that is formed in the base part by dry etching; and a groove that is formed in the base part around the convex part while the dry etching proceeds. The convex part has a convex surface on which a film is formed.

Abstract: A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound semiconductor layer made of a GaN-based compound semiconductor and including a light emission region, and a second compound semiconductor layer of a second conductivity type made of a GaN-based compound semiconductor, the second conductivity type being different from the first conductivity type, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the laminate structure body includes a ridge stripe structure, and a minimum width Wmin and a maximum width Wmax of the ridge stripe structure satisfy 1<Wmax/Wmin<3.3 or 6?Wmax/Wmin?13.3.

Abstract: A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer.

Abstract: Provided are a user-selectable laser and an optical transmitter including the same. The user-selectable laser is an external cavity laser including a semiconductor laser diode for outputting an optical signal, and a wavelength selection filter. The user-selectable laser may allow a user to select a wavelength selection filter which is optically coupled with the semiconductor laser diode and selectively causes oscillation at the wavelength of an optical signal output from the semiconductor laser diode.

Abstract: A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole.

Abstract: A semiconductor laser device includes a semiconductor-layer lamination (20) having an active layer (26) formed over a substrate (11). The semiconductor-layer lamination (20) includes a front face which emits light, a strip-shaped optical waveguide formed in a direction transverse to the front face, a first region (20A) extending in a direction transverse to the front face, a second region (20B) having a top surface whose height is different from that of the first region (20A), and a planar region (20C) formed between the first region (20A) and the second region (20B), and having periodic surface undulations whose variation is smaller than that of the second region (20B). The optical waveguide is formed in the planar region (20C).

Abstract: A light emitting device includes a substantially cuboid package made up of a molded article and a lead that is embedded in the molded article, and a light emitting element that is installed in the package. The lead has a connector where the light emitting element is installed, and a terminal part and an exposed part that are linked to the connector. The package has a bottom face, a front face that is a light emission face contiguous with the bottom face, and a rear face that is contiguous with the bottom face and is opposite the front face. The first terminal part and the exposed part are linked to the rear face side of the connector are exposed from the molded article and contiguous with the bottom face and the rear face, and are isolated at the bottom face.

Abstract: The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.

Abstract: A device includes a semiconductor layer including first and second cladding layers sandwiching an active layer, a groove electrically separates receiving and emitting areas, an active layer part forms a continuous region between first and second end surfaces on a first side of the active layer, the gain region has a reflection surface between the first and second end surfaces reflecting gain region generated light, a first gain region portion extending from the first end surface and a second gain region portion extending from the second end surface are tilted, some light from the first portion is reflected to be emitted from the second end surface, some light from the second portion is reflected to be emitted from the first end surface, and some light transmits through a mirror portion of the reflection surface and is received in the receiving area.

Abstract: There is provided a method of manufacturing a semiconductor laser device. The method includes: preparing a production substrate on a hexagonal-system group III nitride semiconductor substrate having a semi-polar plane, the production substrate having an epitaxial layer that includes a luminous layer of a semiconductor laser device; forming a cutting guide groove in a partial region on a surface of the production substrate, the partial region being on a scribe line on a resonator-end-face side of the semiconductor laser device and including one or more corners of the semiconductor laser device, and the cutting guide groove being formed in an extending direction along the scribe line and being V-shaped in cross section when viewed from the extending direction; and cutting, along the scribe line, the production substrate in which the cutting guide groove is formed.