Abstract: A method of depositing an amorphous layer of AlON includes providing an aluminum sputter target in a chamber, exposing the target and chamber to O2 to saturate the exposed surfaces with oxygen, introducing a substrate into the chamber in an atmosphere containing at least nitrogen and oxygen, and sputtering the target in the nitrogen and oxygen atmosphere to deposit an amorphous AlON film.

Abstract: A vacuum deposition system for forming a dense coating includes a substrate holder for holding a substrate having a substrate surface to be coated, a magnetic field generator, an optional electron source, an optional electron drain, and a deposition source. The magnetic field generator generates a magnetic field in which the substrate is at least partially immersed such that a component of the magnetic field is parallel to the substrate surface such that electrons are forced along a path that causes ionization in the vicinity of the substrate surface. The magnetic field strength at the substrate surface is between 5 and 1000 Gauss. The deposition source provides material to coat the substrate. The vacuum deposition system includes the optional electron source if the deposition source does not provide a source of electrons. A method for depositing a dense coating is also provided.

Abstract: A method for forming a coating on an ionic liquid includes placing an ionic liquid on a surface of a substrate, thereby forming an ionic liquid coated substrate. The ionic liquid coated substrate is introduced into a physical deposition chamber having a physical deposition target. One or more materials are directed from the physical deposition target onto the ionic liquid of the ionic liquid coated substrate by physical vapor deposition to form a coating on the ionic liquid of the ionic liquid coated substrate.

Abstract: A coated substrate including a substrate having a surface, a bond coat proximate to the substrate surface, a yttrium stabilized zirconia (YSZ) thermal barrier layer opposite the substrate surface, and at least one interlayer disposed between the bond coat and the thermal barrier layer, wherein the interlayer contains an alloy having a nanocrystalline grain structure. A method for coating a substrate to be exposed to high in service temperatures and/or temperature cycles including depositing a bond coating on substrate surface, depositing at least one nanocrystalline interlayer on the bond coat opposite the substrate surface, and depositing a yttrium stabilized zirconia (YSZ) thermal barrier coating on the nanocrystalline interlayer opposite the bond coat, wherein the service life of the YSZ thermal barrier coating is extended relative to a substrate coated with the bond coating and the thermal barrier without the interlayer disposed therebetween.

Abstract: The invention is directed toward a method and apparatus which can be used to allow the sputter deposition of material onto at least one article to form a coating on the same. The new form of magnetron described herein allows an increase in sputter deposition rates to be achieved at higher powers and without causing damage to the coating being created. This can be achieved by improved cooling and use of a relatively high magnetic field in the magnetron while at the same time increasing the power to the magnetron by increasing the current at a rate faster than the voltage.

Abstract: A sputtering system having a processing chamber with an inlet port and an outlet port, and a sputtering target positioned on a wall of the processing chamber. A movable magnet arrangement is positioned behind the sputtering target and reciprocally slides behinds the target. A conveyor continuously transports substrates at a constant speed past the sputtering target, such that at any given time, several substrates face the target between the leading edge and the trailing edge. The movable magnet arrangement slides at a speed that is at least several times faster than the constant speed of the conveyor. A rotating zone is defined behind the leading edge and trailing edge of the target, wherein the magnet arrangement decelerates when it enters the rotating zone and accelerates as it reverses direction of sliding within the rotating zone.

Abstract: The present invention relates to a sputtering method using a sputtering device, wherein entire scan region is defined from one side to the other side of a sputtering target, and the sputtering target is scanned with a magnet moving back and forth along the entire scan region multiple times. The entire scan region of a sputtering target is divided by N parts to be uniformly eroded, such that a magnet moves back and forth along some part of the divided entire scan region. A sputtering method using a sputtering device can therefore extend an alternating cycle of a sputtering target, by virtue of improving utilization efficiency of the sputtering target through uniform erosion of the sputtering target, and can also reduce manufacturing cost.

Abstract: An apparatus for generating sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cm2 is provided. The apparatus comprises a power supply that is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.

Abstract: The invention is a method for obtaining a reactive sputtering process with a reduced or eliminated hysteresis behavior. This is achieved by employing a target made from a mixture of metal and compound materials. In the method according to the present invention, the fraction of compound material is large enough to eliminate or significantly reduce the hysteresis behavior of the reactive sputtering process and enable a stable deposition of compound films at a rate significantly higher than what is possible from a target completely made from compound material.

Abstract: Disclosed therein is a vacuum deposition method for forming gradient patterns using a vacuum device. The vacuum device comprises vacuum chambers (8) containing a substrate (4) and metal targets (1) therein and a blocking member (7) interposed between the substrate (4) and the metal targets (1). When voltage is applied to the metal targets (1), atoms (5) popping out from the metal targets (1) are deposited onto the substrate (4) in such a way that the amount of atoms deposited on the substrate (4) is gradually decreased from the edge toward the center of the blocking member (7) due to interruption of the blocking member (7).

Abstract: A film-forming device is provided, including: a chamber in which a substrate is disposed; a target, disposed within the chamber, which contains a material from which a film is formed; a substrate-supporting table disposed inside the chamber; driving unit that rotates the substrate-supporting table; a sputtering cathode that causes sputtered particles to be incident on the substrate from an oblique direction; and a control unit that controls the driving unit by setting a rotation period so that a sputtering film formation time required to form a film having a desired thickness is an integer multiple of a rotation period of the substrate-supporting table.

Abstract: Plasma processing with enhanced charge neutralization and process control is disclosed. In accordance with one exemplary embodiment, the plasma processing may be achieved as a method of plasma processing a substrate. The method may comprise providing the substrate proximate a plasma source; applying to the plasma source a first RF power level during a first period and a second RF power level during a second period, the first and second RF power levels being greater than zero RF power level, wherein the second RF power level is greater than the first RF power level; generating with the plasma source a first plasma during the first period and a second plasma during the second period; and applying to the substrate a first bias voltage during the first period and a second bias voltage during the second period, wherein the first voltage has more negative potential than the second voltage.

Abstract: A deposition apparatus includes a processing chamber internally having a reduced-pressure space for deposition process to be carried out therein, a base material holding member for holding a base material to be subjected to the deposition process, a target support member for supporting a target thereon, and a power supply unit for applying electric power to the target support member to generate a plasma in the reduced-pressure space. In the deposition apparatus, deposition process is carried out by using the target, which has a recess portion in its surface and in which a powder target formed of a powder material is placed in an inner surface of the recess portion. Thus, the in-plane uniformity of deposition rate is improved and a stable film deposition is fulfilled.

Abstract: The invention relates to a substrate (10), provided with a thin-film multilayer comprising an alternation of n functional layers (40, 80) having reflection properties in the infrared and/or in solar radiation and (n+1) coatings (20, 60, 100), where n is an integer ?2, said coatings being composed of a plurality of dielectric layers (24, 26; 64, 66; 104), so that each functional layer (40, 80) is placed between two coatings (20, 60, 100), at least two functional layers (40, 80) each being deposited on a wetting layer (30, 70) itself deposited respectively directly onto a subjacent coating (20, 60), characterized in that two subjacent coatings (20, 60) each comprise at least one dielectric layer (24, 64) and at least one noncrystalline smoothing layer (26, 66) made from a material that is different from the material of said dielectric layer within each coating, said smoothing layer (26, 66) being in contact with said superjacent wetting layer (30, 70) and in that these two subjacent coatings (20, 60) being of d

Abstract: Methods for processing substrates are provided herein. In some embodiments, a method of processing a substrate within a process chamber having an electrostatic chuck to support a substrate in a processing region of the process chamber and a target disposed opposite the electrostatic chuck, wherein the target comprises a target material to be deposited on the substrate, may include disposing a substrate on the electrostatic chuck; providing a process gas to the processing region; igniting a plasma in the processing region from the process gas while the substrate is disposed on the electrostatic chuck with no chucking voltage provided to clamp the substrate to the electrostatic chuck; and depositing target material on the substrate to form a first barrier layer while no chucking voltage is provided, wherein the target material is sputtered from the target via the plasma.

Abstract: Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. The fluent gas has an average molecular weight less than 5 amu. A first high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio.

Abstract: A magnetron sputtering apparatus in which a target is disposed to face a substrate includes a magnet array body including a magnet group arranged on a base body, and a rotating mechanism for rotating the magnet array body around an axis perpendicular to the substrate. In the magnet array body, N poles and S poles constituting the magnet group are arranged to be spaced from each other along a surface facing the target such that a plasma is generated based on a drift of electrons by a cusp magnetic field. Magnets located on the outermost periphery of the magnet group are arranged in a line to prevent the electrons from being released from constraint of the cusp magnetic field and jumping out of the cusp magnetic field. A distance between the target and the substrate during sputtering is equal to or less than 30 mm.

Abstract: Methods for forming a metal containing layer onto a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of sputter depositing a metal containing layer on the substrate includes transferring a substrate in a processing chamber, supplying a gas mixture including at least Ne gas into the processing chamber, applying a RF power to form a plasma from the gas mixture, and depositing a metal containing layer onto the substrate in the presence of the plasma.

Abstract: When sputtering method is performed by disposing a plurality of targets in parallel with each other, and by charging power to the targets through a plurality of bipolar pulsed power supplies, power can be charged with higher accuracy to the targets while being subject to less effect by the switching noises by a simple control. In a sputtering method in which, for each of targets making a pair, power is supplied in a bipolar pulsed mode by switching ON or OFF of each of the switching elements SW1 through SW4 in a bridge circuit that is connected to positive and negative DC output ends from the DC power supply source, and in which each of the targets is sputtered, switching ON or OFF of the switching elements is performed in a short-circuited state of an output-short-circuiting switching element SW0 which is disposed between positive and negative DC outputs from the DC power supply source.

Abstract: Field-enhanced sputtering targets are disclosed that include: a core material; and a surface material, wherein at least one of the core material or the surface material has a field strength design profile and wherein the sputtering target comprises a substantially uniform erosion profile. Target assembly systems are also disclosed that include a field-enhanced sputtering target; and an anodic shield. Additionally, methods of producing a substantially uniform erosion on a sputtering target are described that include: providing an anodic shield; providing a cathodic field-enhanced target; and initiating a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the cathodic field-enhanced target.

Abstract: A method of deposition is provided in which a deposition operation can be immediately performed when a workpiece for deposition is carried into a deposition chamber irrespective of a shape or a structure of the workpiece for deposition. The workpiece for deposition is integrally molded with an assisting member, which is configured to maintain the workpiece for deposition in a predetermined orientation such that a deposition surface or a deposition portion thereof faces a target material when the workpiece for deposition is carried into a deposition chamber and is placed on a deposition stand, when the workpiece for deposition is injection-molded; and the workpiece for deposition is carried into the deposition chamber and is deposited.

Abstract: A system and method for managing power delivered to a processing chamber is described. In one embodiment current is drawn away from the plasma processing chamber while initiating an application of power to the plasma processing chamber during an initial period of time, the amount of current being drawn away decreasing during the initial period of time so as to increase the amount of power applied to the plasma processing chamber during the initial period of time.

Abstract: A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

Abstract: Apparatus and method for physical vapor deposition are provided. In some embodiments, a cooling ring to cool a target in a physical vapor deposition chamber may include an annular body having a central opening; an inlet port coupled to the body; an outlet port coupled to the body; a coolant channel disposed in the body and having a first end coupled to the inlet port and a second end coupled to the outlet port; and a cap coupled to the body and substantially spanning the central opening, wherein the cap includes a center hole.

Abstract: A vacuum coating apparatus and method comprising a vacuum chamber, at least one pair of opposing cathodes, a power supply adapted to supply an AC voltage to said opposing cathodes to operate them in a dual magnetron sputtering mode, wherein at least one further cathode for PVD coating is provided in said vacuum chamber, characterized in that the at least one further cathode is a magnetron cathode and a further power supply is provided in the form of a pulsed power supply or a DC power supply is provided which is connectable to the magnetron cathode or arc cathode.

Abstract: A coated article includes a substrate, a catalyst layer, a bonding layer and a hydrophobic layer. The catalyst layer made of tin is formed on the substrate. The bonding layer is formed on the catalyst layer, including titanium, tin, stannic oxide and titanium dioxide. The hydrophobic layer made of silicon-nitrogen is formed on the bonding layer.

Abstract: A droplet-free wear-resistant coating is manufactured by depositing a wear resistant nitride coating containing a nitride layer which contains at least one metal or metal compound of a metal selected from the group consisting of Ti, Cr, Al, Si and combinations thereof, on a surface of a substrate by cathodic-arc evaporation using a Venetian blind filter system in front of an arc cathode; to reduce metal microdroplets and/or metal microparticles in the wear resistant coating compared to an wear resistant coating obtained without a Venetian blind filter system.

Abstract: A plasma lens for enhancing the quality and rate of sputter deposition onto a substrate is described herein. The plasma lens serves to focus positively charged ions onto the substrate while deflecting negatively charged ions, while at the same time due to the line of sight positioning of the lens, allowing for free passage of neutrals from the target to the substrate. The lens itself is formed of a wound coil of multiple turns, inside of which are deposed spaced lens electrodes which are electrically paired to impress an E field overtop the B field generated by the coil, the potential applied to the electrodes increasing from end to end towards the center of the lens, where the applied voltage is set to a high potential at the center electrodes as to produce a potential minimum on the axis of the lens.

Abstract: A sputtering target is provided that includes a planar backing plate and a target material formed over the planar backing plate and including an uneven sputtering surface including thick portions and thin portions and configured in conjunction with a sputtering apparatus such as a magnetron sputtering tool with a fixed magnet arrangement. The uneven surface is designed in conjunction with the magnetic fields that will be produced by the magnet arrangement such that the thicker target portions are positioned at locations where target erosion occurs at a high rate. Also provided is the magnetron sputtering system and a method for utilizing the target with uneven sputtering surface such that the thickness across the target to become more uniform in time as the target is used.

Abstract: A gas-timing control method for depositing metal oxynitride and transition metal oxynitride (Mx(ON)y) films on glass and flexible substrates using reactive radio frequency magnetron sputtering, without substrate heating. A system includes a sputtering chamber, substrates, targets, three mass flow controllers controlled respective flow rates of argon, nitrogen and oxygen gases alternately and intermittently into the sputtering chamber, and a radio frequency generator with 13.56 MHz which irradiated in the sputtering chamber to decompose sputtering gases. The flow rate ratio of oxygen+nitrogen/argon is at least 0.02, the flow rate ratio of oxygen/nitrogen is at least 0.01, and the sequence timing of argon, nitrogen and oxygen gases alternately or mixed into the sputtering chamber at least 1 sec.

Abstract: A vacuum processing apparatus includes an evacuatable vacuum chamber, a substrate holder which is provided in the vacuum chamber, has a substrate chuck surface vertically facing down, and includes an electrostatic chuck mechanism which electrostatically chucks a substrate, a substrate support member which is provided in the vacuum chamber to keep the substrate parallel to the substrate chuck surface and support the substrate in an orientation that allows the substrate chuck surface to chuck the substrate, and a moving mechanism which moves at least one of the substrate holder and the substrate supported by the substrate support member so as to bring the substrate and the substrate holder into contact with each other, thereby causing the substrate holder to chuck the substrate.

Abstract: A coating includes a deposited layer. The deposited layer is a nickel-titanium carbonitride layer.

Abstract: A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

Abstract: A coating includes a nano-composite base comprising a number of films, the films stacked together one after another. Each film includes a nickel-titanium carbonitride layer and a titanium carbonitride layer.

Abstract: The adhesion of metal thin films onto polymeric substrates can be significantly enhanced by contacting the surface of the polymeric substrate with a non-complexing solvent before or after depositing the metal film.

Abstract: A method and system for conditioning a vapor deposition target is described. In one illustrative embodiment, a vapor deposition system is operated in which a vapor deposition target is used, the occurrence of electrical arcs in the vapor deposition system is detected, and the vapor deposition target is conditioned by adjusting an output current of a power supply that powers the vapor deposition system and adjusting an interval during which energy is delivered to each arc to deliver substantially the same energy to each arc. In some embodiments, the energy delivered to each arc is approximately equal to the maximum energy that the vapor deposition target can withstand without being damaged. The described method and system significantly reduces the time required to remove impurities from a target and does not require the venting of the vacuum chamber or the removal of the target from the chamber.

Abstract: The present invention has been achieved to provide a method and apparatus for speedily and homogeneously fabricating polycrystalline silicon films or similar devices at low cost. A silicon target is attached to a water-cooled electrode, while a substrate made of a desired material is set on the other, heated electrode. When atmospheric pressure hydrogen plasma is generated between the two electrodes, silicon atoms will be released from the low-temperature target on the side and deposited on the high-temperature substrate. A doped silicon film can be created by using a target containing a doping element. Since there is no need to handle expensive and harmful gases (e.g. SiH4, B2H6 and PH3), the apparatus can be installed and operated at lower costs. In an application of the film producing method according to the present invention, an objective substance can be selectively purified from a target containing a plurality of substances.

Abstract: A vacuum processing system includes a vacuum chamber that can contain a workpiece therein, a deposition source unit that provides a material to be deposited on the workpiece in vacuum, and a cooling module in thermal contact with the deposition source unit. The cooling module includes one or more holding wells that can contain a cooling liquid. The cooling module can cool the deposition source unit by a loss of latent heat during the evaporation of the cooling liquid.

Abstract: An apparatus and method for manufacturing a highly efficient flexible thin metal film-laminated strip by improves adhesiveness between a polyimide strip and a thin metal film, and removes stress from thin films laminated through magnetron sputtering, which is a dry deposition process. The stress-free flexible circuit board manufacturing method includes the steps of: a) depositing a seed layer on the substrate using the magnetron deposition source; b) depositing a compressive thin film using the single magnetron deposition source arranged next to the magnetron deposition source; c) depositing tensile thin film using the dual magnetron deposition source arranged next to the single magnetron deposition source; and d) repeating the steps b) and c) so as to sequentially and alternately deposit compressive thin films and tensile thin films thereby obtaining a thick film with a desired thickness.

Abstract: A rotating magnetron sputtering cathode apparatus comprising a radio frequency power supply, a power delivery assembly, a cylindrical rotating cathode, a shaft and a drive motor, wherein the power delivery assembly comprises a magnetic field source positioned within the cathode and an electrode extending within said cathode to transmit radio frequency energy to target material on the outer surface of the cathode. The electrode is electrically isolated from the shaft, and is formed from non-ferrous materials, and the shaft is mechanically connected to the cathode such that they remain electrically isolated while the cathode rotates about the magnetic field source and a portion of the electrode. The power supply is adapted to supply radio frequency energy at frequencies of 1 MHz or higher and is electrically connected to the electrode.

Abstract: The invention relates to a substrate comprising at least one photocatalytic compound active under the conditions of illuminating an interior of a building or transport vehicle, intended to neutralize the microorganisms with which it comes into contact, and also to its preparation processes and its uses as glazing or another substrate for disinfection, filtration, ventilation, etc.

Abstract: A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, providing a silicon substrate and a growing device, and the growing device including a reacting room. Secondly, forming a silicon dioxide layer on a surface of the silicon substrate. Thirdly, forming a titanium layer on the silicon dioxide layer. Fourthly, placing the silicon substrate into the reacting room, and heating the reacting room to a temperature of 500˜1000° C. Finally, forming a plurality of nickel cluster onto the surface of the silicon substrate.

Abstract: A shadow mask for patterning a substrate during a semiconductor process. In one implementation, a method for performing a Physical vapor deposition (PVD) on a substrate is provided. The method includes placing a substrate on a susceptor disposed below one or more PVD guns and below a plasma shield assembly having an aperture piece comprising a bellows and a shadow mask coupled to a bottom side of the bellows, the aperture piece detachably coupled to the plasma shield assembly, wherein a region defined between sides of the bellows is smaller than a width of the substrate. The method includes lowering the bellows toward the substrate to place the shadow mask in contact with the substrate and depositing a material on an isolated region on the substrate through the shadow mask.

Abstract: A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface and a back surface opposite to the sputtering surface. A backing plate can be positioned facing the back surface of the target and non-bonded to the back surface of the target. A non-bonding attachment mechanism can removably hold the target within the sputtering cathode such that the back surface is facing the backing plate during sputtering.

Abstract: A physical vapor deposition (PVD) system includes a chamber and a plurality of electromagnetic coils arranged around the chamber. First and second annular bands of permanent magnets are arranged around the chamber with poles oriented perpendicular to a magnetic field imposed by the electromagnetic coils. Each of the permanent magnets in the first annular band is arranged with poles having a first polarity closest to a central axis of the chamber. Each of the permanent magnets in the second annular band is arranged anti-parallel with respect to the permanent magnets in the first annular band.

Abstract: A method induces plasma vapor deposition of metal into a recess in a workpiece. The method achieves re-sputtering of the metal at the base of the recess with a sputter gas by utilizing a mixture of Ar and He and/or Ne as the sputter gas with a ratio of He and/or Ne:Ar of at least about 10:1.

Abstract: To provide a filmy structure of a nanometer size having a phase-separated structure effective for the case where a compound can be formed between two kinds of materials. A structure constituted by a first member containing a compound between an element A except both Si and Ge and SinGe1-n (where 0?n?1) and a second member containing one of the element A and SinGe1-n (where 0?n?1), in which one of the first member and the second member is a columnar member, formed on a substrate, whose side face is surrounded by the other member, the ratio Dl/Ds of an average diameter Dl in the major axis direction to an average diameter Ds in the minor axis direction of a transverse sectional shape of the columnar member is less than 5, and the element A is one of Li, Na, Mg, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Cs, Ba, La, Hf, Ta, W, Re, Os, Ir, Pt, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and B.

Abstract: A method of producing a gas barrier laminate comprises: the steps of forming an inorganic compound layer on a substrate by vapor-phase film deposition, applying surface roughening treatment to a surface of the inorganic compound layer, and subsequently forming an organic compound layer on the roughened surface of the inorganic compound layer by flash evaporation.

Abstract: A dual purpose processing chamber is provided. The dual purpose processing chamber includes a lid disposed over a top surface of a processing region of the processing chamber. A plurality of sputter guns with a target affixed to one end of each of the sputter guns is included. The plurality of sputter guns extend through the lid of the process chamber, wherein each of the plurality of sputter guns is oriented such that a surface of the target affixed to each gun is angled toward an outer periphery of a substrate. In another embodiment, each of the sputter guns is affixed to an extension arm and the extension arm is configured to enable movement in four degrees of freedom. A method of performing a deposition process is also included.

Abstract: This invention relates to a fixture for use in a physical vapor deposition coating operation which comprises a support structure 14 comprising a circular base member 10, a circular top member 11 opposite the circular base member 10, and a plurality of structural members 12 joining said top member 11 to said base member 10; a plurality of panel members 13 aligned in a vertical direction around the outer periphery of said support structure 14 forming a cylinder structure; said panel members 13 including a plurality of apertures for holding workpieces 19 and 35 to which a coating is to be applied; and said apertures positioned on said panel members 13 so that said workpieces 19 and 35 are aligned in a staggered vertical direction. This invention also relates to a method for simultaneously coating a plurality of workpieces 19 and 35, such as gas turbine compressor blades and vanes, with erosion resistant coatings using the fixture of this invention.