Abstract: The invention relates to apparatus and a method for applying coatings to substrates such as, for example, a lens or electronic component. The apparatus includes a coating chamber in which there is provided one or more magnetrons which include, typically, an at least partially oxidised metal or metal alloy. A carrier is provided for the substrates to be moved and held in the coating chamber and the carrier is formed from a plurality of units on which the substrates are positioned and the units can be brought together to form the carrier.

Abstract: Embodiments provided herein describe methods and systems for depositing material onto a surface. A target including a material in a porous state is provided. The density of the material in the porous state is less than 89% of the absolute density of the material. The target is positioned over a surface. At least some of the material is caused to be ejected from the target and deposited onto the surface.

Abstract: Embodiments provided herein describe methods and systems for depositing material onto a surface. A target including a material in a porous state is provided. The density of the material in the porous state is less than 93% of the absolute density of the material. The target is positioned over a surface. At least some of the material is caused to be ejected from the target and deposited onto the surface. Films deposited from the porous targets exhibit significantly fewer particle defects than films of the same material deposited from the conventionally preferred higher-density targets. Brittle materials, such as alloys of refractory metals and silicon, seem to particularly benefit. The larger, less-uniform layered grains of the porous targets seem less prone to 10-micron-scale delamination than the smaller, more uniform grains of denser targets.

Abstract: A shielding component and a sputter gun are described. The sputter gun has a housing. The housing has a region configured to expose a target surface. The shielding component extends around an inward facing periphery of the region. The shielding component comprises metal foam. The shielding component is configured to provide a fluid proximate to the target surface. An annular channel may be arranged to provide a gas through pores of the metal foam of the shielding component, to the region proximate to the target.

Abstract: A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone.

Abstract: A chamber for physical vapor deposition is provided. The chamber includes a housing, a door for opening and closing the housing, and a bearing for receiving a target, wherein the bearing is oriented in a first direction. Further, the chamber is adapted so that the target is at least partially removable from the chamber in the first direction. According to an embodiment, a chamber for physical vapor deposition is provided. The chamber is adapted for receiving at least one target and a substrate. The chamber includes a housing, a door, and at least one bearing for mounting the target, wherein the bearing is attached to the door.

Abstract: A method for making low emissivity panels, including control the ion characteristics, such as ion energy, ion density and ion to neutral ratio, in a sputter deposition process of a layer deposited on a thin conductive silver layer. The ion control can prevent or minimize degrading the quality of the conductive silver layer, which can lead to better transmittance in visible regime, block more heat transfer from the low emissivity panels, and potentially can reduce the requirements for other layers, so that the overall performance, such as durability, could be improved.

Abstract: It is an object to provide a method for packaging a target material with which a thin film that is less contaminated with an impurity in the air such as a compound containing a hydrogen atom can be formed. In addition, it is an object to provide a method for mounting a target with which a thin film that is less contaminated with an impurity can be formed. In order to achieve the objects, a target material in a target is not exposed to the air and kept sealed after being manufactured until a deposition apparatus on which the target is mounted is evacuated.

Abstract: An adjustable shunt assembly for use with a sputtering magnetron having at least two magnets spaced from one another and disposed with respect to a sputtering target having a sputtering surface. The magnets define a longitudinal axis and the adjustable shunt assembly moves a shunt between the two magnets for altering the magnetic field therebetween. A transporter is used for moving the shunt so that such movement may be occurred without disassembling the components of the magnetron and such movement may also be done remotely. A method for moving such shunts is also disclosed.

Abstract: A method of manufacturing or surface treating a wire wrapped screen for use in a wellbore improves the erosion resistance of the wire-wrapped screen. The wire-wrapped screen can be disposed on an axle positioned in a chamber containing a source of erosion resistant surface coating. The coating is then deposited on the exterior of the wire-wrapped screen using a deposition process, such as physical vapor deposition or thermal spraying. Alternatively, a spray system proximate the wire-wrapped screen can have a deposition nozzle to coat the exterior surface of the screen with an elastomer coating by spraying an elastomer. In additional embodiments, the wire for the wire-wrapped screen can first be treated for erosion resistance and then wound about a mandrel to form the wire-wrapped screen.

Abstract: The present disclosure relates to an apparatus and method utilizing double glow discharge for sputter cleaning of a selected surface. The surface may include the inner surface of a hollow substrate such as a tube which inner surface may then be coated via magnetron sputter deposition.

Abstract: The invention relates to a method and to a device for reversing the feeding of a sputter coating system, particularly when coating a photovoltaic module, in clean rooms, having the following characteristics: a) a transport frame (11) for receiving a substrate wafer (19) of a photovoltaic module, b) a rotary device having means for mounting the transport frame (11), having means for rotating the transport frame (11), and having means for transporting the transport frame (11), c) means for precisely aligning the rotary device relative to the sputter coating system, d) a detection device (18) for checking a sputter process, and computer program having a program code for performing the process steps.

Abstract: A method for depositing a material on a graphene layer includes arranging a graphene layer having an exposed substantially planar surface proximate to a magnetron assembly that is operative to emit a plasma plume substantially along a first line, wherein the exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the first line where the first line intersects the exposed planar surface; and emitting the plasma plume from the magnetron assembly such that a layer of deposition material is disposed on the graphene layer without appreciably damaging the graphene layer.

Abstract: A sputter gun assembly is provided. The sputter gun assembly includes a target and a target backing plate coupled to the back of the target. A magnetron is positioned within a cooling chamber and is disposed over the target backing plate and defines a gap between the magnetron and the target backing plate. A fluid inlet and a fluid outlet are connected to the cooling chamber. A restriction bar is positioned within the cooling chamber, wherein the restriction bar is configured to prevent a flow of fluid through the inlet to the outlet unless the fluid traverses the gap defined between the magnetron and the target backing plate. The sputter gun assembly further includes a diverter surrounding the magnetron. The diverter further includes slots in its surface that serve to direct cooling fluid through the gap formed between defined between the magnetron and the target backing plate.

Abstract: A method of patterning a gate stack on a substrate is described. The method includes preparing a gate stack on a substrate, wherein the gate stack includes a high-k layer and a gate layer formed on the high-k layer. The method further includes transferring a pattern formed in the gate layer to the high-k layer using a pulsed bias plasma etching process, and selecting a process condition for the pulsed bias plasma etching process to achieve a silicon recess formed in the substrate having a depth less than 2 nanometer (nm).

Abstract: The present invention provides a hard multilayer film formed body which has an intermediate layer excellent in its adhesion to a base material and a DLC film which is a surface layer excellent in its wear resistance, prevents peeling from occurring between the DLC film and the intermediate layer, and is excellent in its wear resistance and a method for producing the same. A hard multilayer film formed body 1 consists of a multilayer film formed on a surface of a base material 2 consisting of a cemented carbide material or a ferrous material. The multilayer film has (1) a film, composed mainly of DLC, which is formed as a surface layer 5 of the multilayer film; (2) an intermediate layer 3, composed mainly of a metallic material, which is formed between the surface layer 5 and the base material 2; and (3) a stress relaxation layer 4, composed mainly of carbon, which is formed between the intermediate layer 3 and the surface layer 5.

Abstract: A process for treating a non-ferrous metal component, comprising placing the component into a process chamber at an elevated temperature, biasing the component to have a potential capable of attracting ions, introducing oxygen into the chamber at a pressure such that a glow discharge comprising oxygen ions is generated, the process chamber additionally comprising a glow discharge ionization enhancing means, and activating the glow discharge ionization enhancing means thereby increasing charged species density of the glow discharge, the oxygen ions flowing towards the component and colliding the surface thereof at least some of which diffuse into the component.

Abstract: A device and a method of facing target sputtering are provided, which can easily change magnetic flux line patterns between facing targets, thereby enabling to conveniently perform a plurality of kinds of sputtering such as facing target sputtering with facing mode, facing target sputtering with mixed mode composed of facing mode and magnetron mode. Thus, the device and the method of facing target sputtering effective for each material is provided. The sputtering device for forming a thin film in which a pair of target holders 2 having targets 1 arranged thereon is provided so as to arrange targets faced to each other. A pole group including a plurality of pole elements having at least a different pole direction is arranged at the back side of the target holders opposite to surfaces on which the targets are arranged. The pole elements are any of a permanent magnet 4, a yoke 7, 8 and an electromagnet 13 or a combination of them.

Abstract: A control system and method for controlling two motors determining the azimuthal and circumferential position of a magnetron rotating about the central axis of the sputter chamber in back of its target sputtering and capable of a nearly arbitrary scan path, e.g., with a planetary gear mechanism. A system controller periodically sends commands to the motion controller which closely controls the motors. Each command includes a command ticket, which may be one of several values. The motion controller accepts only commands having a command ticket of a different value from the immediately preceding command. One command selects a scan profile stored in the motion controller, which calculates motor signals from the selected profile. Another command instructs a dynamic homing command which interrogates sensors of the position of two rotating arms to determine if the arms in the expected positions. If not, the arms are rehomed.

Abstract: A film forming method includes mounting a substrate on a mounting member after loading the substrate into a reaction chamber, adsorbing a compound of a first metal on a surface of the substrate by supplying a source gas containing the compound of the first metal into the reaction chamber, reducing the compound of the first metal adsorbed on the substrate by making a reducing gas contact therewith to thereby obtain a first metal layer, and alloying the first metal and a second metal to obtain an alloy layer of the first metal and the second metal by injecting the second metal into the first metal layer. The second metal is ejected from a target electrode facing the substrate by making a sputtering plasma contact with the target electrode, and at least a surface of the target electrode is formed of the second metal different from the first metal.

Abstract: Method for performing a HIPIMS coating process, whereby a minimal distance 5 between target and substrate is reduced till achieving an essentially maximal bias current at substrate during coating process, and thereby improving considerably coating quality and increasing deposition rate in comparison with conventional HIPIMS coating processes.

Abstract: A substrate processing method may include forming a plasma; extracting ions from the plasma and accelerating the ions to have uniform or substantially uniform directivity using a grid system; irradiating the ions at a reflector, wherein the reflector includes a plurality of reflecting plates each having a metal plate and an insulating layer on the metal plate, wherein the reflecting plates are parallel or substantially parallel such that the insulating layers are exposed to the ions; reflecting the ions incident on the reflecting plates away from the insulating layers of the reflecting plates; colliding the ions reflected away from the insulating layers with the metal plates to convert the ions into neutral beams; and irradiating the neutral beams onto a substrate to process the substrate.

Abstract: A vacuum processing apparatus includes an evacuatable vacuum chamber, a substrate holder which is provided in the vacuum chamber, has a substrate chuck surface vertically facing down, and includes an electrostatic chuck mechanism which electrostatically chucks a substrate, a substrate support member which is provided in the vacuum chamber to keep the substrate parallel to the substrate chuck surface and support the substrate in an orientation that allows the substrate chuck surface to chuck the substrate, and a moving mechanism which moves at least one of the substrate holder and the substrate supported by the substrate support member so as to bring the substrate and the substrate holder into contact with each other, thereby causing the substrate holder to chuck the substrate.

Abstract: Methods for forming a thin film layer on a substrate are provided. The method can include: rotating a cylindrical target about a center axis; ejecting atoms from the sputtering surface with a plasma; transporting a substrate across the plasma at a substantially consistent speed; and depositing the atoms ejected from the sputtering surface onto the substrate to form a thin film layer. The cylindrical target generally includes a source material forming a sputtering surface about the cylindrical target, with the source material having a plurality of first areas and a plurality of second areas. Each first area includes a first compound, and each second area includes a second compound, while the first compound is different than the second compound.

Abstract: Cylindrical sputtering targets, along with methods of their manufacture and use, are provided. The cylindrical sputtering target includes a tubular member having a length in a longitudinal direction and defining a tube surface, and a source material positioned about the tube surface of the tubular member and forming a sputtering surface about the tubular member. The source material generally defines an inner surface opposite of the sputtering surface and non-bonded to the tube surface of the tubular member. The inner surface of the source material is mechanically engaged to the tube surface of the tubular member, and/or the source material can include a first cylindrical ring directly stacked onto a second cylindrical ring with the first cylindrical ring being mechanically engaged to the second cylindrical ring.

Abstract: A film formation apparatus and film formation method that improve film thickness uniformity. A rotation mechanism holds a target having a sputtered surface in a state inclined relative to a surface of a substrate. The rotation mechanism rotatably supports the target about an axis extending along a normal of the sputtered surface. The target supported by the rotation mechanism is sputtered to form a thin film on the surface of the substrate. When forming the thin film, the rotation mechanism maintains the rotational angle of the target.

Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

Abstract: An energetic composite having a plurality of reactive particles each having a reactive multilayer construction formed by successively depositing reactive layers on a rod-shaped substrate having a longitudinal axis, dividing the reactive-layer-deposited rod-shaped substrate into a plurality of substantially uniform longitudinal segments, and removing the rod-shaped substrate from the longitudinal segments, so that the reactive particles have a controlled, substantially uniform, cylindrically curved or otherwise rod-contoured geometry which facilitates handling and improves its packing fraction, while the reactant multilayer construction controls the stability, reactivity and energy density of the energetic composite.

Abstract: The subject of the invention is a process for obtaining a substrate (1) provided on at least one of its sides with a coating (2), comprising a step of depositing said coating (2) then a step of heat treatment of said coating using a main laser radiation (4), said process being characterized in that at least one portion (5, 14) of the main laser radiation (4) transmitted through said substrate (1) and/or reflected by said coating (2) is redirected in the direction of said substrate in order to form at least one secondary laser radiation (6, 7, 18).

Abstract: A target material supply apparatus for an extreme ultraviolet (EUV) light source includes a tube that includes a first end, a second end, and a sidewall defined between the first and second ends. At least a portion of an outer surface of the tube includes an electrically insulating material, the first end receives a pressurized target material, and the second end defines an orifice through which the pressurized target material passes to produce a stream of target material droplets. The target material supply apparatus also includes an electrically conductive coating on the outer surface of the tube. The coating is configured to electrically connect the outer surface of the tube to ground to thereby reduce surface charge on the outer surface.

Abstract: A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

Abstract: The present invention provides a film forming method which can reduce deterioration of film thickness distribution even if the thickness of a film to be formed is extremely small while improving use efficiency of a target and a sputtering apparatus. A film forming method by a sputtering apparatus according to one embodiment of the present invention has a first step of fixing a magnet to a first position and performing film formation on a substrate on a substrate support surface, a second step of moving the magnet to a second position different from the first position after finishing the film formation on the substrate and then fixing it thereto, and a third step of performing film formation on the substrate on the substrate support surface by using the magnet fixed to the second position.

Abstract: A method of depositing a metallization structure (1) comprises depositing a TaN layer (4) by applying a power supply between an anode and a target in a plurality of pulses to reactively sputter Ta from the target onto the substrate (2) to form a TaN seed layer (4). A Ta layer (5) is deposited onto the TaN seed layer (4) by applying the power supply in a plurality of pulses and applying a high-frequency signal to a pedestal supporting the substrate (2) to generate a self-bias field adjacent to the substrate (2).

Abstract: In a dual cathode magnetron, an adjustment circuit is provided between a pair of sputter targets having a coaxial (preferably frusto-conical) relationship to modify the distribution of ion and electron currents flowing from the plasma discharge to a substrate residing within a sputter chamber. A stress adjustment circuit is used to modify the ion bombardment of the growing films on the substrate resulting in a mechanism for control of the stress in the deposited films. In a preferred embodiment, the adjustment circuit comprises a variable resistor disposed between an internal shield that acts as a passive anode and a target. The value of the variable resistor influences the plasma discharge current distribution between the split sputter targets and the internal shields, and can effectively be used to adjust the properties of the deposited films.

Abstract: The invention relates to a process for the continuous production of a flexible substrate, preferably a plastics film containing a multi-layer coating in a roll-to-roll coating process, in which at least one vacuum coating process and at least one wet coating process are combined together, and to a device for use in such a process.

Abstract: The invention concerns a transparent substrate carrying a layer of a transparent dielectric nanocomposite, comprising a matrix of SiNyOz, y being in the range 0 to 4/3, z being in the range 0 to 2 and y and z not being equal to 0 simultaneously, said matrix including nanoparticles selected from the group consisting of aluminum nitrides, zirconium nitrides, titanium nitrides, aluminum oxides, zirconium oxides, zinc oxides, titanium oxides, tin oxides, tantalum oxides and mixtures thereof.

Abstract: In a simple method and device for producing plasma flows of a metal and/or a gas electric discharges are periodically produced between the anode and a metal magnetron sputtering cathode in crossed electric and magnetic fields in a chamber having a low pressure of a gas. The discharges are produced so that each discharge comprises a first period with a low electrical current passing between the anode and cathode for producing a metal vapor by magnetron sputtering, and a second period with a high electrical current passing between the anode and cathode for producing an ionization of gas and the produced metal vapor. Instead of the first period a constant current discharge can be used. Intensive gas or metal plasma flows can be produced without forming contracted arc discharges. The selfsputtering phenomenon can be used.

Abstract: A method of forming a thin-film includes: a normal deposition step of depositing a thin-film on a substrate by performing discharge among a plurality of targets, and by providing an inert gas and a reactive gas into a processing chamber, with a magnet section being reciprocated along a target section formed by these targets; and a discharge starting step of starting a discharge at the target section prior to the normal deposition step, in a state in which a flow ratio of the reactive gas to the inert gas is larger than a flow ratio of the reactive gas to the inert gas in the normal deposition step.

Abstract: A vacuum coating and plasma treatment system includes a magnetron cathode with a long edge and a short edge. The magnetic pole of the magnetron results in an electromagnetic barrier. At least one remote arc discharge is generated separate from the magnetron cathode and in close proximity to the cathode so that it is confined within a volume adjacent to the magnetron target. The remote arc discharge extends parallel to the long edge of the magnetron target and is defined by the surface of the target on one side and the electromagnetic barrier on all other sides. There is a remote arc discharge cathode hood and anode hood extending over the arc discharge and across the short edge of the magnetron cathode. Outside of the plasma assembly is a magnetic system creating magnetic field lines which extend into and confine the plasma in front of the substrate.

Abstract: A coating system includes a vacuum chamber and a coating assembly. The coating assembly includes a vapor source, a substrate holder, a remote anode electrically coupled to the cathode target, and a cathode chamber assembly. The cathode chamber assembly includes a cathode target, an optional primary anode and a shield which isolates the cathode target from the vacuum chamber. The shield defines an opening for transmitting an electron emission current of a remote arc discharge from the cathode target to the remote anode that streams along the target face long dimension. A primary power supply is connected between the cathode target and the primary anode while a secondary power supply is connected between the cathode target and the remote anode. Characteristically, a linear remote anode dimension and a vapor source short dimension are parallel to a dimension in which an arc spot is steered along the cathode target.

Abstract: In accordance with a representative embodiment, a method, comprises: providing a substrate; forming a first piezoelectric layer having a compression-negative (CN) polarity over the substrate; and forming a second piezoelectric layer having a compression-positive (CP) over the substrate and adjacent to the first piezoelectric layer.

Abstract: This disclosure provides systems, methods, and apparatus related to physical vapor deposition. In one aspect, an apparatus includes a magnet assembly including a magnet element, a substrate holder configured to hold a substrate, a target holder configured to hold a target positioned between the magnet assembly and the substrate, a motor configured to move the magnet assembly across a face of the substrate, and a controller. The controller includes program instructions for conducting a process including moving the magnet assembly across the face of the substrate using the motor to sputter material from the target onto the substrate. The material sputtered onto the substrate may have a substantially uniform thickness.

Abstract: The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2 A/cm2 are obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded.

Abstract: One embodiment is directed to a magnetron assembly comprising a plurality of magnets, and a yoke configured to hold the plurality of magnets in at least four straight, parallel, independent linear arrays. The plurality of magnets is arranged in the yoke so as to form a pattern comprising an outer portion and an inner portion, wherein the outer portion substantially surrounds the perimeter of the inner portion. The end portions of the linear array comprise a pair of turnaround sections, wherein each turnaround section substantially spans respective ends of the pair of elongated sections of the outer portion. The magnets in each turnaround section are arranged to form at least two or more different curves in the magnetic field that are offset from each along the target rotation axis.

Abstract: In the present invention, in forming a LaB6 thin film by magnetron sputtering, the single-crystal properties in the wide domain direction in the obtained LaB6 thin film are improved. In one embodiment of the present invention, in a magnetron sputtering apparatus, parallel magnetic field strength on a surface of the substrate is set to 0.1 times or less parallel magnetic field strength on a surface of the target.

Abstract: A device and a method of facing target sputtering are provided, which can easily change magnetic flux line patterns between facing targets, thereby enabling to conveniently perform a plurality of kinds of sputtering such as facing target sputtering with facing mode, facing target sputtering with mixed mode composed of facing mode and magnetron mode. Thus, the device and the method of facing target sputtering effective for each material is provided. The sputtering device for forming a thin film in which a pair of target holders 2 having targets 1 arranged thereon is provided so as to arrange targets faced to each other. A pole group including a plurality of pole elements having at least a different pole direction is arranged at the back side of the target holders opposite to surfaces on which the targets are arranged. The pole elements are any of a permanent magnet 4, a yoke 7, 8 and an electromagnet 13 or a combination of them.

Abstract: Improved thin film getter devices (300, 500) comprise a layer (350, 550) of getter material deposited on a substrate (320, 520). The layer has a main portion (340, 540) and a cap portion (360, 560), which forms an external surface of the device. The cap portion has a lower specific area than the main portion.

Abstract: A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.

Abstract: A method and control system are provided for depositing a layer in a sputter-deposition system having a target cathode. A first dependence relationship of a deposition rate of the layer on an operating parameter, selected from cathode voltage, cathode current, and cathode power, is provided prior to deposition of the layer. A second dependence relationship of the operating parameter on time is measured during deposition of the layer, while a different operating parameter, also selected from cathode voltage, cathode current, and cathode power, is held substantially constant. On the basis of the first and second dependence relationships, a deposition time for the layer is dynamically determined during deposition of the layer.

Abstract: A cylindrical magnetron sputtering apparatus includes a rotating cylindrical sputtering target, a non-rotating magnet structure within the cylindrical sputtering target and at least one non-rotating trim magnet adjacent an end of the magnet structure. The trim magnets are manipulated during operation of the apparatus to alter a magnetic field produced by the magnet structure within the cylindrical sputtering cathode. As a result the shape of a racetrack discharge plasma formed at an end of the sputtering target is altered such that the formation of an erosion groove is avoided.