Abstract: To control reactive magnetron sputtering process using a reactive gas or reactive gases the process overall pressure is regulated by means of the flow of the re-active gas or the reactive gases, respectively. Oscillations of the flow of the reactive gas or the reactive gases, respectively are determined and used as feedback to determine the process overall pressure.

Abstract: An ion accelerator includes a plasma ion source and a micro-collimator. The micro-collimator has a plurality of channels. The length-to-width ratio of each channel is greater than five, and the channel width is less than one micron. The ion source is coupled to the micro-collimator such that ions from the ion source pass into the channels, and then through the plurality of channels. In one specific example, the ion source produces cold ions that have only a small amount of lateral momentum. Each channel is an individually gated acceleration channel that is formed into a solid dielectric material. Ions are accelerated down the acceleration channel. The ion accelerator forms a part of an ionjet head of a Direct Write On Wafer (DWOW) printing system. The DWOW printing system is useful in semiconductor processing in that it can direct write an image onto a 300 mm diameter wafer in one minute.

Abstract: A thin film deposition apparatus includes a process chamber that includes a reaction space, a plasma generating unit, and a sputtering unit. The plasma generating unit generates a plasma in the reaction space. The sputtering unit is independently driven from the plasma generating unit to form an electric field in the reaction space and to perform a sputtering process on a target using the plasma.

Abstract: In accordance with the present invention, deposition of LiCoO2 layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO2 with a desired <101> or <003> orientation. Some embodiments of the deposition address the need for high rate deposition of LiCoO2 films, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (>700° C.) anneal step that is conventionally needed to crystallize the LiCoO2 layer.

Abstract: A coated article includes a substrate, and a coating deposited on the substrate by magnetron sputtering. The coating includes micropores, and each micropore is sealed by a sealing element.

Abstract: A thin film forming apparatus includes a substrate holding portion and a target portion. The target portion has a plurality of targets arranged at predetermined intervals and parallel to a substrate held by the substrate holding portion. The substrate holding portion is configured to move the substrate parallel to the target portion. A shield portion configured to block sputtered particles flying from the target portion is placed on the target portion side of the substrate so as to face a gap between adjoining ones of the targets.

Abstract: A plasma CVD apparatus comprising a vacuum chamber, and a main roll and a plasma generation electrode in the vacuum chamber, wherein a thin film is formed on a surface of a long substrate which is conveyed along the surface of the main roll is provided. At least one side wall extending in transverse direction of the long substrate is provided on each of the upstream and downstream sides in the machine direction of the long substrate, and the side walls surrounds the film deposition space between the main roll and the plasma generation electrode. The side walls are electrically insulated from the plasma generation electrode. The side wall on either the upstream or the downstream side in the machine direction of the long substrate is provided with at least one raw of gas supply holes formed by gas supply holes aligned in the transverse direction of the long substrate.

Abstract: The present invention provides a gas barrier laminate film containing a substrate film having on at least one surface thereof plural layers of an inorganic thin film layer, from a first layer to an n-th layer (wherein n represents an integer of 1 or more) of the inorganic thin film layer on a side of the substrate film being formed by a non-plasma film forming method, and an (n+1)-th layer formed thereon in contact therewith being formed by a facing target sputtering method, and a method for producing a gas barrier laminate film containing a substrate film having on at least one surface thereof one or plural layers of an inorganic thin film layer, the method containing: forming from a first layer to an n-th layer of the inorganic thin film layer on a side of the substrate film by a non-plasma film forming method; and forming an (n+1)-th layer thereon in contact therewith by a facing target sputtering method, and thus provides a gas barrier laminate film with high gas barrier property and excellent productivit

Abstract: A system for substrate deposition is disclosed. The system includes a wafer pallet and an anode. The wafer pallet has a bottom and a top. The top of the wafer pallet is configured to hold a substrate wafer. The anode has a substantially fixed position relative to the wafer pallet and is configured to move with the wafer pallet through the deposition chamber. The anode is electrically isolated from the substrate wafer.

Abstract: A thin film battery manufacturing method is provided for deposition of lithium metal oxide films onto a battery substrate. The films are deposited in a sputtering chamber having a plurality of sputtering targets and magnetrons. The sputtering gas is energized by applying a voltage bias between a pair of the sputtering targets at a frequency of between about 10 and about 100 kHz. The method can provide a deposition rate of lithium cobalt oxide of between about 0.2 and about 4 microns/hr with improved film quality.

Abstract: This disclosure relates to a magnet assembly including an epicyclic gearing system. The epicyclic gearing system including a central gear configured to be rotated, at least one peripheral gear connected to the central gear and configured to rotate and translate relative to the central gear, and an annulus surrounding the at least one peripheral gear and connected with the at least one peripheral gear. The magnet assembly further includes a magnet module connected with the epicyclic gearing system, the magnet module including a support connected with the at least one peripheral gear, the axis of rotation of the support being coaxial with the axis of rotation of the at least one peripheral gear connected with the support.

Abstract: It is provided a device for supporting a rotatable target of a deposition apparatus for sputtering material onto a substrate, wherein the device includes a drive unit for rotating the rotatable target; a ring-shaped part connected to the drive unit for attaching the drive unit to the rotatable target; and, a shield for covering the ring-shaped part. The shield is adapted for rotating together with the ring-shaped part and includes a plurality of parts assembled together. Furthermore, a sputtering apparatus and a method for supporting a rotatable target are provided.

Abstract: The nanoparticle production device includes a target provided with a nanoparticle source surface, and a magnetron generating a first magnetic field, the target being mounted on the magnetron and the first magnetic field forming field lines at the level of the nanoparticle source surface. The device further includes balancing means of the first magnetic field at the level of the target, arranged to close fleeing field lines of the first magnetic field and to keep said lines closed at the level of said nanoparticle source surface, said balancing means being distinct from the magnetron.

Abstract: The invention relates to a process for depositing under vacuum a multilayers coating stack on a flat glass substrate and to a modular coater for the deposit of thin layers on a flat glass substrate. A gas separation zone disposed between two depositing zones of the modular coater comprises at least one gas injector in the vicinity of the convoying path for the glass substrate which passes through apertures from a depositing zone towards the other depositing zone via the separation zone. The invention allows improvement of the separation factor between the two depositing zones.

Abstract: The invention aims to provide a magnetron electrode for plasma treatment that is free of significant abnormal electrical discharge and able to perform electrical discharge with long-term stability. A second electrode is provided only at a position outside the inner side surface of the outer magnetic pole of a first electrode or at a position where the magnetic flux density is low.

Abstract: A housing is provided which includes an aluminum or aluminum alloy substrate, an aluminum layer and a corrosion resistant layer formed on the aluminum or aluminum alloy substrate in that order. The corrosion resistant layer is an Al—O layer. Then, Gd ions are implanted in the Al—O layer by ion implantation process. The atomic percentages of O in the Al—O gradient layer gradually increase from the side of Al—O gradient layer near the aluminum or aluminum alloy substrate to the other side of Al—O gradient layer, away from aluminum or aluminum alloy substrate. Therefore the housing has a high corrosion resistance. A method for making the housing is also provided.

Abstract: A phosphor includes semiconductor nanoparticles formed of compound semiconductor, and conductive transparent compounds. The semiconductor nanoparticles may be dispersed in or on the conductive transparent compounds. The resistivity of the conductive transparent compounds is preferably less than or equal to 10 ?cm.

Abstract: A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, a silicon substrate and a growing device, and the growing device including a reacting room are provided. Secondly, a silicon dioxide layer is formed on a surface of the silicon substrate. Thirdly, a titanium layer is formed on the silicon dioxide layer. Fourthly, the silicon substrate is placed into the reacting room, and the reacting room is heated to a temperature of 500˜1000° C. Finally, a plurality of nickel cluster is formed onto the surface of the silicon substrate.

Abstract: The invention relates to a method for manufacturing a decorated glass sheet covered with a functional coating, including the sequential steps of applying at least one decorative pattern onto at least a portion of a surface of the glass sheet by printing, drying the printed decorative pattern, and depositing the functional coating such that it at least partially covers said decorative pattern, by magnetron cathode sputtering. The invention further relates to the use of the resulting covered decorated glass sheet as a facing element.

Abstract: In a process for coating a substrate, the substrate is arranged opposite a removal surface of a target and the coating material is atomized by sputtering under an inert or reactive-gas-containing process gas and deposited on the substrate. The coating takes place from a mixed target with at least one target component A and a target component B. At the beginning of the sputtering process, the distribution of the target components A and B in a superficial target layer of the removal surface is modified by high-power impulse magnetron sputtering.

Abstract: The present invention provides a method of controlling a reactive sputtering system used in coating processes. More specifically, the present invention provides a microprocessor-based control system for reactive gases in a sputtering system, particularly during the start-up phase of operation. The preferred demand for such a reactive gas is predicted for every stage of the operation, and the reactive gas supply is amenable to predictive control provided by object program-driven mathematical formulae. The injection of reactive gas using time-advanced, sequential, mathematically-derived procedures simplifies overall system operation and provides a system with an optimal amount of reactive gas at an optimal time.

Abstract: A housing is provided which includes an aluminum or aluminum alloy substrate, an aluminum layer and a corrosion resistant layer formed on the aluminum or aluminum alloy substrate in that order. The corrosion resistant layer is an Al—C—N layer. Then, Ce ions are implanted in the Al—C—N layer by ion implantation process. The atomic percentages of N and C in the Al—C—N gradient layer gradually increase from the side of Al—C—N gradient layer near the aluminum or aluminum alloy substrate to the other side of Al—C—N gradient layer, away from aluminum or aluminum alloy substrate. Therefore the housing has a high corrosion resistance. A method for making the housing is also provided.

Abstract: A housing is provided which includes an aluminum or aluminum alloy substrate, an aluminum layer and a corrosion resistant layer formed on the aluminum or aluminum alloy substrate in that order. The corrosion resistant layer is an Al—O layer. Then, La ions are implanted in the Al—O layer by ion implantation process. The atomic percentages of O in the Al—O gradient layer gradually increase from the side of Al—O gradient layer near the aluminum or aluminum alloy substrate to the other side of Al—O gradient layer, away from aluminum or aluminum alloy substrate. Therefore the housing has a high corrosion resistance. A method for making the housing is also provided.

Abstract: A magnetron sputtering system generates a high density plasma on a target by applying magnetic fields intersecting an electric field by using a plurality of magnets that are rotatably supported. The respective magnets are revolved and rotated so that the time variation of regions where a magnetic field (line of magnetic force) generated by the each magnet is orthogonal to an electric field is prevented from becoming monotonous. Further, the respective magnets are arranged to make the distances between the center of rotation and the center of revolution of the respective magnets different from each other, so that the regions where the magnetic field (line of magnetic force) generated by the each magnet is orthogonal to the electric field are dispersed in the radial direction of a target.

Abstract: A housing is provided which includes an aluminum or aluminum alloy substrate, an aluminum layer and a corrosion resistant layer formed on the aluminum or aluminum alloy substrate in that order. The corrosion resistant layer is an Al—O layer. Then, Nd ions are implanted in the Al—O layer by ion implantation process. The atomic percentages of O in the Al—O gradient layer gradually increases from the side of Al—O gradient layer near the aluminum or aluminum alloy substrate to the other side of Al—O gradient layer, away from aluminum or aluminum alloy substrate. Therefore the housing has a high corrosion resistance. A method for making the housing is also provided.

Abstract: A magnetron sputtering device includes alternating current power supplies each connected to a first target and a second target in a pair, and a controller configured to control a phase difference between voltages output from the alternating current power supplies connected to the first targets and the second targets in the pairs adjacent to each other.

Abstract: A sputtering system for depositing a thin film on the surface of a disc substrate in which high precision positioning of an inner mask and an outer mask is facilitated. The sputtering system has a mask member placed on the surface of the substrate mounted on a substrate holder to cover a partial region on the surface of the substrate. A thin film is deposited by sputtering in a region on the surface of the substrate not covered by the mask member. A section for carrying in and carrying out the substrate has mechanically holds and releases the substrate holder mounting the substrate, and mechanically holds and releases the mask member.

Abstract: A magnetron sputtering coating device includes a deposition chamber, sputtering cathodes, a rotating stand within the deposition chamber, a support platform on the rotating stand, a first rotation system for driving the rotating stand to rotate around a central axis of the rotating stand, and a baffle fixed on the rotating stand. The sputtering cathodes are arranged around and perpendicular to the rotating stand.

Abstract: A rotary cylindrical sputtering target includes a plurality of target pieces bonded to the periphery of a backing tube, wherein the target pieces are arranged in the axis direction of the tube so that a gap is formed between the adjacent target pieces, wherein the gap has a straight section which extends from the outer periphery of the target pieces toward the axis of the backing tube, and a tapered section which is positioned between the straight section and the backing tube, and which slopes in the longitudinal direction of the straight section.

Abstract: A method of sputtering with sputtering apparatus is for depositing a layer upon a substrate. The apparatus includes a sputter target with a face exposed to the substrate and a magnetron providing a magnetic field that moves relative to the target face. The speed of movement of the field is controlled such that the uniformity of the deposition on the substrate is enhanced. A particular method includes monitoring uniformity verses speed, selecting the speed that gives the preferred uniformity and controlling the field to the selected speed. The selected speed may vary over the life of the target, with increased speeds becoming desirable as the target thins.

Abstract: A sputtering apparatus for ensuring high target utilization efficiency is provided. The sputtering apparatus 1 of the present invention comprises a moving means 28a, 28b so that first and second magnet members 23a, 23b can be moved by the moving means 28a, 28b in planes parallel to the surfaces of first and second targets 21a, 21b. When the first and second magnet members 23a, 23b move, magnetic field lines as well as deeply eroded regions on the surfaces of the first and second targets 21a, 21b also move, whereby large areas on the surfaces of the first and second targets 21a, 21b are sputtered.

Abstract: Disclosed is a method of preparing a positive active material for a lithium battery. The method comprises: depositing a positive active material on an electrode on a substrate (1); and putting metal chips on a metal oxides target and performing a sputtering process, thereby depositing mixed metal-oxides on the positive active material (2). In another aspect, the method comprises: preparing an electrode active material; preparing a precursor solution including the electrode active material; and printing the precursor solution on the substrate, and evaporating a solvent at a temperature of 80-120° C.

Abstract: The invention relates to a coating method for depositing a layer system formed from hard material layers on a substrate, by depositing at least one contact layer including the evaporation material on the surface of the substrate only by means of a cathodic vacuum arc evaporation source. After the depositing of the contact layer, at least one intermediate layer is deposited in the form of a nano-layer intermediate layer in a hybrid phase or as a nanocomposite layer, including the evaporation material and the discharge material, by parallel operation of a cathodic vacuum arc evaporation source and of a magnetron discharge source.

Abstract: A method of magnetron sputtering, comprises rotating a magnet of a magnetron with an angular frequency ?, and, during sputtering of material from a source of the magnetron onto a substrate, periodically modulating a power level applied to the source with at least a component comprising a frequency f which is a harmonic of the angular frequency ? of rotation of the magnet other than the first harmonic.

Abstract: A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 ?s.

Abstract: In a method for imaging a solid state substrate, a vapor is condensed to an amorphous solid water condensate layer on a surface of a solid state substrate. Then an image of at least a portion of the substrate surface is produced by scanning an electron beam along the substrate surface through the water condensate layer. The water condensate layer integrity is maintained during electron beam scanning to prevent electron-beam contamination from reaching the substrate during electron beam scanning. Then one or more regions of the layer can be locally removed by directing an electron beam at the regions. A material layer can be deposited on top of the water condensate layer and any substrate surface exposed at the one or more regions, and the water condensate layer and regions of the material layer on top of the layer can be removed, leaving a patterned material layer on the substrate.

Abstract: The present disclosure describes a method of coating a substrate, the method including forming a layer of sputtered material on the substrate. Forming the layer of sputtered material may include: sputtering material from at least one rotatable target over the substrate; varying the relative position between the at least one target and the substrate. In addition, the present disclosure describes varying the distance between a target and a substrate during the sputter process. The present disclosure further describes a system for coating a substrate.

Abstract: A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.

Abstract: A housing is provided which includes an aluminum or aluminum alloy substrate, an aluminum layer and a corrosion resistant layer formed on the aluminum or aluminum alloy substrate in that order. The corrosion resistant layer is an Al—C—N layer. Then, Nd ions are implanted in the Al—C—N layer by ion implantation process. The atomic percentages of N and C in the Al—C—N gradient layer gradually increase from the side of Al—C—N gradient layer near the aluminum or aluminum alloy substrate to the other side of Al—C—N gradient layer, away from aluminum or aluminum alloy substrate. Therefore the housing has a high corrosion resistance. A method for making the housing is also provided.

Abstract: A method of fabricating a layer of a thin film battery comprises providing a sputtering target and depositing the layer on a substrate using a physical vapor deposition process enhanced by a combination of plasma processes. The deposition process may include: (1) generation of a plasma between the target and the substrate; (2) sputtering the target; (3) supplying microwave energy to the plasma; and (4) applying radio frequency power to the substrate. A sputtering target for a thin film battery cathode layer has an average composition of LiMaNbZc, wherein 0.20>{b/(a+b)}>0 and the ratio of a to c is approximately equal to the stoichiometric ratio of a desired crystalline structure of the cathode layer, N is an alkaline earth element, M is selected from the group consisting of Co, Mn, Al, Ni and V, and Z is selected from the group consisting of (PO4), O, F and N.

Abstract: A housing is provided which includes an aluminum or aluminum alloy substrate, an aluminum layer and a corrosion resistant layer formed on the aluminum or aluminum alloy substrate in that order. The corrosion resistant layer is an Al—C—N layer. Then, Gd ions is implanted in the Al—C—N layer by ion implantation process. The atomic percentages of N and C in the Al—C—N gradient layer gradually increase from the side of Al—C—N gradient layer near the aluminum or aluminum alloy substrate to the other side of Al—C—N gradient layer, away from aluminum or aluminum alloy substrate. Therefore the housing has a high corrosion resistance. A method for making the housing is also provided.

Abstract: A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

Abstract: A housing is provided which includes an aluminum or aluminum alloy substrate, an aluminum layer and a corrosion resistant layer formed on the aluminum or aluminum alloy substrate in that order. The corrosion resistant layer is an Al—C—N layer. Then, La ions is implanted in the Al—C—N layer by ion implantation process. The atomic percentages of N and C in the Al—C—N gradient layer gradually increase from the side of Al—C—N gradient layer near the aluminum or aluminum alloy substrate to the other side of Al—C—N gradient layer, away from aluminum or aluminum alloy substrate. Therefore the housing has a high corrosion resistance. A method for making the housing is also provided.

Abstract: Provided is a magnetron source, which comprises a target material, a magnetron located thereabove and a scanning mechanism connected to the magnetron for controlling the movement of the magnetron above the target material. The scanning mechanism comprises a peach-shaped track, with the magnetron movably disposed thereon; a first driving shaft, with the bottom end thereof connected with the origin of the polar coordinates of the peach-shaped track, for driving the peach-shaped track to rotate about the axis of the first driving shaft; a first driver connected to the first driving shaft for driving the first driving shaft to rotate; and a second driver for driving the magnetron to move along the peach-shaped track via a transmission assembly. A magnetron sputtering device including the magnetron and a method for magnetron sputtering using the magnetron sputtering device are also provided.

Abstract: A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.

Abstract: A coated member includes a base material and a coating film formed on the surface thereof. At least one layer in the coating film is a hard film of a cubic metal compound including at least one element selected from the group consisting of the group 4 elements (Ti, Zr, Hf, etc.), group 5 elements (V, Nb, Ta, etc.) and group 6 elements (Cr, Mo, W, etc.) of the periodic table, Al, Si, B, Y and Mn together with at least one element selected from the group consisting of C, N and O. In the pole figure for the face (111) of the hard film, the X-ray intensity distribution in the ?-axis shows the maximum intensity in the ?-angle range of 50-65°. In the pole figure for the face (200), the X-ray intensity distribution in the ?-axis shows the maximum intensity in the ?-angle range of 60-80°.

Abstract: The present invention relates to a glass product, comprising a glass substrate with a transparent and conductive indium tin oxide layer having a covering layer, which forms a redox barrier for the indium tin oxide layer, wherein the indium tin oxide layer is obtained by pulsed, highly ionizing high-power magnetron sputtering (HPPMS) in which—the pulses of the magnetron have a peak power density greater than 1.5 kW/cm2,—the pulses of the magnetron have a time duration that is ?200 ?s, and—the mean current flow density rise upon ignition of the plasma within a time interval that is ?0.025 ms is at least 106 ?(ms cm2), and the indium tin oxide layer has a crystalline structure, in such a way that the (222)-reflection of an X-ray diffraction spectrum after the production of the indium tin oxide layer is shifted relative to the powder spectrum of indium tin oxide by a maximum of 1 degree, preferably by 0.3 degrees to 0.

Abstract: Sputtering chambers including a mesh material covering the inner surfaces within the chamber are generally provided. The sputtering chamber can include a cathode positioned in working proximity to a sputtering target, a target shield extending over at least a portion of the sputtering target while leaving a majority of the sputtering target exposed, and a mesh material positioned on an outer surface of the target shield. Additionally, or alternatively, the sputtering chamber candefine a pair of side walls, a top wall, and a bottom wall, with the mesh material positioned on an inner surface of the side walls, the top wall, and/or the bottom wall. Methods are also generally provided for sputtering a target in a sputtering chamber to deposit a thin film on a substrate.

Abstract: A method for applying power to target material in a magnetron sputtering process is provided. The method includes: 10) connecting a main power supply and a maintaining power supply to the target material (2) respectively; 20) applying a particular main power in the form of pulses to the target material (2) by the main power supply; applying a particular maintaining power which is smaller than the main power to the target material (2) by the maintaining power supply at least during the pulse interval time (t2) of the main power supply, so as to maintain a glow discharge procedure of the sputtering process during the purse interval time (t2) of the main power supply. The method for applying power to target material can obviously enhance the metal ionization rate while the process stability and controllability are guaranteed.

Abstract: Disclosed herein is a flexible fuel cell, including: (i) an anode comprising an anode end plate structure made of a polymer material and provided with a hydrogen flow channel and a collector made of a metal layer deposited on the anode end plate structure; (ii) a cathode comprising a cathode end plate structure made of a polymer material and provided with an air flow channel having air holes and a collector formed of a metal layer deposited on the cathode end plate structure; and (iii) a membrane electrode assembly (MEA) comprising a polymer electrolyte membrane whose surface is coated with a catalyst layer and a gas diffusion layer (GDL) provided on at least one side thereof, wherein the membrane electrode assembly is interposed and pressed between the anode and the cathode.