Abstract: System for flash-free overmolding of LED array substrates. In an aspect, a method is provided for molding encapsulations onto an LED array substrate. The method includes attaching a protective tape onto a substrate surface of the substrate so that openings in the protective tape align with LED devices of the substrate and applying molding material onto a molding surface of a molding tool and to portions of the substrate exposed through the openings in the protective tape. The method also includes pressing the molding surface and the substrate surface together at a selected pressure and a selected temperature so that encapsulations are formed on the portions of the substrate exposed through the openings in the protective tape, separating the molding surface from the substrate surface, and removing the protective tape so that molding material flash is removed from the substrate leaving a clean molded substrate.

Abstract: A power semiconductor module includes a housing element into which one or more connecting lugs are inserted. Each connecting lug has a foot region on the topside of which one or more bonding connections can be produced. In order to fix the foot regions, press-on elements are provided, which press against the end of the connecting lug.

Abstract: A multi-chip package comprises a first chip accommodated in a first housing and a second chip accommodated in a second housing. The first housing and the second housing are arranged in a laterally spaced-apart relationship defining a gap between the first housing and the second housing. An interconnecting structure is configured to span the gap and to electrically couple the first chip and the second chip.

Abstract: Aspects and examples include electrical components and methods of forming electrical components. In one example, a method includes selecting a substrate, forming a pattern of a first conductive material on a top surface of the substrate, forming a pattern of a second conductive material on a bottom surface of the substrate, dicing the substrate into one or more die having a first diced surface and a second diced surface, securing the first diced surface of each of the one or more die to a retaining material, encapsulating the one or more die in an encapsulent to form a reconstituted wafer, and forming a pattern of a third conductive material on the second diced surface by metalizing a surface of the reconstituted wafer.

Abstract: A multi-chip electronic package and methods of manufacture are provided. The method comprises adjusting a piston position of one or more pistons with respect to one or more chips on a chip carrier. The adjusting comprises placing a chip shim on the chips and placing a seal shim between a lid and the chip carrier. The seal shim is thicker than the chip shim. The adjusting further comprise lowering the lid until the pistons contact the chip shim. The method further comprises separating the lid and the chip carrier and removing the chip shim and the seal shim. The method further comprises dispensing thermal interface material on the chips and lowering the lid until a gap filled with the thermal interface material is about a particle size of the thermal interface material. The method further comprises sealing the lid to the chip carrier with sealant.

Abstract: Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a thermal spreader having graduated thermal expansion parameters. In some embodiments, the thermal spreader may have a first layer with a first coefficient of thermal expansion (CTE) and a second layer with a second CTE that is greater than the first CTE. Other embodiments may be described and/or claimed.

Abstract: A power semiconductor module includes an electrically insulating substrate, copper metallization disposed on a first side of the substrate and patterned into a die attach region and a plurality of contact regions, and a semiconductor die attached to the die attach region. The die includes an active device region and one or more copper die metallization layers disposed above the active device region. The active device region is disposed closer to the copper metallization than the one or more copper die metallization layers. The copper die metallization layer spaced furthest from the active device region has a contact area extending over a majority of a side of the die facing away from the substrate. The module further includes a copper interconnect metallization connected to the contact area of the die via an aluminum-free area joint and to a first one of the contact regions of the copper metallization.

Abstract: A semiconductor device package includes a semiconductor device having connection pads formed thereon, with the connection pads being formed on first and second surfaces of the semiconductor device with edges of the semiconductor device extending therebetween. A first passivation layer is applied on the semiconductor device and a base dielectric laminate is affixed to the first surface of the semiconductor device that has a thickness greater than that of the first passivation layer. A second passivation layer having a thickness greater than that of the first passivation layer is applied over the first passivation layer and the semiconductor device to cover the second surface and the edges of the semiconductor device, and metal interconnects are coupled to the connection pads, with the metal interconnects extending through vias formed through the first and second passivation layers and the base dielectric laminate sheet to form a connection with the connection pads.

Abstract: The present technology is directed toward semiconductors packaged by electrically coupling a plurality of die to an upper and lower lead frame. The opposite edges of each corresponding set of leads in the upper lead frame are bent. The leads in the upper lead frame are electrically coupled between respective contacts on respective die and respective lower portion of the leads in the lower lead frame. The bent opposite edges of each corresponding set of leads of the upper lead frame support the upper lead frame before encapsulation, for achieving a desired position of the plurality of die between the leads of the upper and lower lead frames in the packaged semiconductor. After the encapsulated die are separated, the upper leads have an L-shape and electrically couple die contacts on upper side of the die to leads on the lower side of the die so that the package contacts are on the same side of the semiconductor package.

Abstract: A WSP die having a redistribution layer (“RDL”) with an RDL capture pad that has an RDL pad central axis RR and a RDL pad outer peripheral edge arranged about the RDL capture pad central axis RR and an under bump metal (UBM) pad positioned above the RDL capture pad. The UBM pad has a UBM pad central axis UU and a UBM pad outer peripheral edge arranged around the UBM pad central axis UU. The UBM pad central axis UU is laterally offset from the RDL pad central axis RR.

Abstract: Disclosed herein are a power package module and a method for fabricating the same, including: a base substrate; a plurality of high power chips and a plurality of low power chips electrically connected to the base substrate; and a plurality of metal lead plates electrically connecting the plurality of high power chips and the plurality of low power chips to the base substrate.

Abstract: The present invention provides a TSV-based oscillator WLP structure and a method for fabricating the same. The method of the present invention comprises steps: providing a silicon base having an oscillator unit disposed thereon; forming on the silicon base at least one package ring surrounding the oscillator unit; and disposing a silicon cap on the package ring to envelop the oscillator unit. The present invention adopts a cap and a base, which are made of the same material, to effectively overcome the problem of thermal stress occurring in a conventional sandwich package structure. Further, the present invention elaborately designs the wiring on the lower surface of the base to reduce the package size and decrease consumption of noble metals.

Abstract: An interposer includes a substrate having a contact pad structure and a stud operably coupled to the contact pad structure. A solder ball is seated on the contact pad structure and formed around the stud. The stud is configured to regulate a collapse of the solder ball when a top package is mounted to the substrate.

Abstract: A substrate and a method of making thereof are disclosed. The substrate comprises an electrically conductive leadframe, the leadframe having a plurality of lands on a first side of the leadframe with a first recessed portion between the lands, and a plurality of routing leads on an opposing second side of the leadframe with a second recessed portion between the routing leads. The substrate also comprises a first bonding compound filling the first recessed portion. In one embodiment, the substrate also comprises a support material attached to the first bonding compound for holding the leadframe together. In another embodiment, the substrate comprises a second bonding compound filling the second recessed portion.

Abstract: Semiconductor devices with external wirebond sites that include copper and methods for fabricating such semiconductor devices are disclosed. One embodiment of a method for fabricating a semiconductor device comprises forming a dielectric layer on an active side of a semiconductor substrate. The dielectric layer has openings aligned with corresponding wirebond sites at the active side of the substrate. The method further includes forming a plurality of wirebond sites located at the openings in the dielectric layer. The wirebond sites are electrically coupled to an integrated circuit in the semiconductor substrate and electrically isolated from each other. Individual wirebond sites are formed by electrolessly depositing nickel into the openings and forming a wirebond film on the nickel without forming a seam between the nickel and the dielectric layer.

Abstract: A chip unit includes: a first semiconductor chip and a second semiconductor chip disposed such that their surfaces for forming first bonding pads and second bonding pads face each other; first and second connection members disposed on the surfaces of the first and second semiconductor chips for forming the first and second bonding pads, and having redistribution lines which have one ends connected with the first and second bonding pads and the other ends projecting beyond one edges of the first and second semiconductor chips and films; an adhesive member interposed between the first connection members and the second connection members; and via patterns passing through the adhesive member and connecting projecting portions of the redistribution lines of the first and second connection members with each other.

Abstract: Apparatus and methods for forming a heat spreader on a substrate to release heat for a semi-conductor package are disclosed. The apparatus comprises a substrate. A dielectric layer is formed next to the substrate and in contact with a surface of the substrate. A heat spreader is formed next to the substrate and in contact with another surface of the substrate. A passivation layer is formed next to the dielectric layer. A connection pad is placed on top of the passivation layer. The substrate may comprise additional through-silicon-vias. The contact surface between the substrate and the heat spreader may be a scraggy surface. The packaging method further proceeds to connect a chip to the connection pad by way of a connection device such as a solder ball or a bump.

Abstract: A semiconductor device is provided and includes a semiconductor die, and a plurality of bond pads having exposed surfaces arranged in an alternating interleaved pattern on the semiconductor die. Each of the surfaces of the bond pads have a first bond placement area that overlaps with a second bond placement area, with the first bond placement area having a major axis that is orthogonal to a major axis of the second bond placement area. A connecting bond is located at an intersection of the major axes of the first bond placement area and the second bond placement area on one or more of the bond pads.

Abstract: A semiconductor assembly includes a semiconductor device and a connecting structure. The semiconductor device includes an interconnect region over a semiconductor substrate and a pillar layer having a plurality of pillar contacts on the interconnect region. The pillar layer also includes a plurality of radial heat conductors that have at least a portion overlying a heat source that is within and overlies the semiconductor substrate. Each radial heat conductor extends a length radially from the heat source that is at least twice as great as the diameter of the pillars. The connecting structure includes a connecting substrate that supports a first corresponding pillar contact that is in contact with a first pillar contact of the plurality of pillar contacts. The first connecting structure further includes a heat conductor, supported by the substrate, in contact with a first radial heat conductor of the plurality of radial heat conductors.

Abstract: An integrated circuit package includes an electronic sensor protected by a lid structure. The electronic sensor includes a transducer placed on a backside surface of a lead frame assembly. The lid structure is placed over the transducer and is attached to the lead frame assembly on the backside surface. The lid can define an air cavity around the transducer, such that mold compound, gel, or other protective chemical material is not placed in contact with the transducer. The transducer is therefore protected without a chemical protectant, lowering the cost of the integrated circuit package and maintaining the sensitivity and performance of the transducer.

Abstract: A lead finger of a lead frame has a number of channels or grooves in a portion of its top surface that provide a locking mechanism for securing a bond wire to the lead finger. The bond wire may be attached to the lead finger by stitch bonding.

Abstract: Methods and apparatus are disclosed to form a WLP device that comprises a first chip made of a first technology, and a second chip made of a second technology different from the first technology packaged together by a molding material encapsulating the first chip and the second chip. A post passivation interconnect (PPI) line may be formed on the molding material connected to a first contact pad of the first chip by a first connection, and connected to a second contact pad of the second chip by a second connection, wherein the first connection and the second connection may be a Cu ball, a Cu via, a Cu stud, or other kinds of connections.

Abstract: Provided are power device packages, which include thermal electric modules using the Peltier effect and thus can improve operational reliability by rapidly dissipating heat generated during operation to the outside, and methods of fabricating the same. An exemplary power device package includes: a thermal electric module having a first surface and a second surface opposite each other, and a plurality of n-type impurity elements and a plurality of p-type impurity elements alternately and electrically connected to each other in series; a lead frame attached to the first surface of the thermal electric module by an adhesive member; at least one power semiconductor chip and at least one control semiconductor chip, each chip being mounted on and electrically connected to the lead frame; and a sealing member sealing the thermal electric module, the chips, and at least a portion of the lead frame, but exposing the second surface of the module.

Abstract: In various aspects of the disclosure, a package may be provided. The package may include at least one semiconductor device rotated about an axis with respect to an edge of the package, at least one bond pad on each semiconductor device, and at least one conductive trace electrically connected to the semiconductor device through the at least one bond pad.

Abstract: A semiconductor package includes a baseplate having a die attach region and a peripheral region, a transistor die having a first terminal attached to the die attach region, and a second terminal and a third terminal facing away from the baseplate, and a frame including an electrically insulative member having a first side attached to the peripheral region of the baseplate, a second side facing away from the baseplate, a first metallization at the first side of the insulative member and a second metallization at the second side of the insulative member. The insulative member extends outward beyond a lateral sidewall of the baseplate. The first metallization is attached to the part of the first side which extends outward beyond the lateral sidewall of the baseplate. The first and second metallizations are electrically connected at a region of the insulative member spaced apart from the lateral sidewall of the baseplate.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a substrate, a semiconductor element, a package body and a conductive part. The substrate has an electrical contact. The semiconductor element is disposed on the substrate. The package body covers the semiconductor element and defines a through hole from which the electrical contact is exposed. Wherein, the package body includes a resin body and a plurality of fiber layers. The fiber layers are disposed in the resin body and define a plurality of fiber apertures which is arranged as an array. The conductive part is electrically connected to the substrate through the through hole.

Abstract: In one embodiment, a method of forming a multi-die semiconductor device is provided. A plurality of dice is mounted on a semiconductor substrate, and neighboring ones of the dice are separated by a distance at which a first one of the neighboring dice will contact a meniscus of a flange of the neighboring die during underfill to form a capillary bridge between the neighboring dice. Solder bumps are reflowed to electrically connect contact terminals of the plurality of dice to contact terminals on a top surface of the substrate. Underfill is deposited along one or more edges of one or more of the plurality of dice. As a result of the capillary bridge formed between neighboring dice, flow of underfill is induced between the bottom surfaces of the neighboring dice and the top surface of the substrate. The dispensed underfill is cured.

Abstract: A semiconductor device has a substrate. A first conductive layer is formed over the substrate. A duplex plated bump on lead pad is formed over the substrate. An insulating layer is formed over the first conductive layer and the substrate. A portion of the insulating over the duplex plated bump on lead pad is removed using a laser direct ablation process. The insulating layer is a lamination layer. The duplex plated bump on lead pad has a wide bump on lead pad. A semiconductor die is mounted over the substrate. The semiconductor die has a composite conductive interconnect structure. The semiconductor die has a first bump and a second bump with a pitch ranging from 90-150 micrometers between the first bump and the second bump. A duplex plated contact pad is formed on a surface of the substrate opposite the duplex plated bump-on-lead pad.

Abstract: A semiconductor device has a carrier with a die attach area. A semiconductor die is mounted to the die attach area with a back surface opposite the carrier. A modular interconnect unit is mounted over the carrier and around or in a peripheral region around the semiconductor die such that the modular interconnect unit is offset from the back surface of the semiconductor die. An encapsulant is deposited over the carrier, semiconductor die, and modular interconnect unit. A first portion of the encapsulant is removed to expose the semiconductor die and a second portion is removed to expose the modular interconnect unit. The carrier is removed. An interconnect structure is formed over the semiconductor die and modular interconnect unit. The modular interconnect unit includes a vertical interconnect structures or bumps through the semiconductor device. The modular interconnect unit forms part of an interlocking pattern around the semiconductor die.

Abstract: A semiconductor device utilizing die edge contacts is provided. An integrated circuit die has a post-passivation layer with a trench filled with a conductive material extending from a contact to a die edge, thereby forming a die edge contact. Optionally, a through substrate via may be positioned along the die edge such that the conductive material in the trench is electrically coupled to the through-substrate via, thereby forming a larger die edge contact. The integrated circuit die may be placed in a multi-die package wherein the multi-die package includes walls having a major surface perpendicular to a major surface of the integrated circuit die. The die edge contacts are electrically coupled to contacts on the walls of the multi-die package. The multi-die package may include edge contacts for connecting to another substrate, such as a printed circuit board, a packaging substrate, a high-density interconnect, or the like.

Abstract: A disclosed semiconductor device includes a wiring board, a semiconductor element mounted on a principal surface of the wiring board with flip chip mounting, a first conductive pattern formed on the principal surface along at least an edge portion of the semiconductor element, a second conductive pattern formed on the principal surface along the first conductive pattern and away from the first conductive pattern, a passive element bridging between the first conductive pattern and the second conductive pattern on the principal surface of the wiring board, and a resin layer filling a space between the wiring board and the semiconductor chip, wherein the resin layer extends between the semiconductor element and the first conductive pattern on the principal surface of the wiring board.

Abstract: Bump electrodes (conductive members) bonded onto lands disposed at a peripheral portion side than terminals (bonding leads) electrically coupled to pads (electrode pads) of a microcomputer chip (semiconductor chip) are sealed with sealing resin (a sealing body). Thereafter, the sealing resin is ground (removed) partially such that a part of each of the bump electrodes is exposed. The step of protruding the part of each of the bump electrodes from a front surface of the sealing resin is performed, after the grinding step.

Abstract: A semiconductor package with a die pad, a die disposed on the die pad, and a first lead disposed about the die pad. The first lead includes a contact element, an extension element extending substantially in the direction of the die pad, and a concave surface disposed between the contact element and the extension element. A second lead having a concave surface is also disposed about the die pad. The first lead concave surface is opposite in direction to the second lead concave surface.

Abstract: Methods and apparatus for direct connection to a through via. An apparatus includes a substrate having a front side surface and a back side surface; conductive through vias formed in the substrate and having through via protrusions extending from the back side surface; solder connectors on another device and coupling the another device to the substrate, wherein the solder connectors correspond to the through via protrusions and enclose the through via protrusions to form solder joints; and connectors on the front side surface of the substrate for forming additional electrical connections. Methods include providing a substrate with through vias; thinning the substrate; etching the substrate to create through via protrusions; aligning another device with solder connectors on a surface corresponding to the through via protrusions; placing the solder connectors in contact with the protrusions; and performing a thermal reflow to form solder joints around the through via protrusions.

Abstract: A main package includes a plurality of stacked semiconductor chips and a plurality of first terminals associated with different ones of the semiconductor chips. An additional package includes an additional semiconductor chip and at least one second terminal electrically connected to the additional semiconductor chip. The additional semiconductor chip is to substitute for one of the plurality of semiconductor chips in the main package. The main package and the additional package are arranged in one of a plurality of relative positional relationships that is selected according to which one of the plurality of semiconductor chips in the main package is to be substituted with the additional semiconductor chip.

Abstract: A semiconductor device has a semiconductor die. The semiconductor die has a contact pad. A first conductive layer is formed over the contact pad. A conductive shell having a hollow core is formed over the first conductive layer. A compliant material is deposited in the hollow core. The semiconductor die is mounted over a substrate with the conductive shell electrically connected to a conductive trace on the substrate. A second conductive layer is formed over the conductive shell. The compliant material is an insulating material. A bump material is deposited around the conductive shell. A pre-solder material is deposited over the conductive trace. The conductive shell has a cross-sectional width less than 7 micrometers. The second conductive layer is a conductive lip. Mounting the semiconductor die over the substrate further includes mounting the semiconductor die over the substrate in a bump on lead (BOL) configuration.

Abstract: An integrated circuit 15 is placed onto a lead frame 101 having lead fingers 109 of substantially constant thickness along their length. Wires are formed from the lead fingers 109 to corresponding electrical contacts the integrated circuit. Following the wire bonding process, the thickness of the tips of the lead fingers 109 is reduced by a laser process, to form tips of reduced thickness desirable for a subsequent moulding operation. Thus, at the time of the wire bonding the tips of the fingers 109 need not have a gap beneath them, so that more secure wire bonds to the lead fingers 109 can be formed.

Abstract: A mechanism is provided by which optically-inspectable features formed during surface mount bonding of no-leads packages are enhanced. Embodiments of the present invention use a lead frame having features that will lie upon the edges of the finished semiconductor device package, where molding material is prevented from lying in those features through the use of a preplaced film on the lead frame or film-assisted molding in conjunction with a mold chase that conforms to the features provided on the lead frame. Embodiments use a lead frame that has a pre-plated solderable surface, such that the exposed features enhance formation of the optically-inspectable features during solder reflow operations of PCB mounting.

Abstract: A flip chip package may include package substrate, a semiconductor chip, conductive bumps, a molding member and a heat sink. The semiconductor chip may be arranged over an upper surface of the package substrate. The conductive bumps may be interposed between a lower surface of the semiconductor chip and the upper surface of the package substrate to electrically connect the semiconductor chip and the package substrate with each other. The molding member may be formed on the upper surface of the package substrate to cover the semiconductor chip. The heat sink may make contact with the semiconductor chip to dissipate a heat in the semiconductor chip. An ultrasonic wave may pass through only one interface between the semiconductor chip and the molding member, so that scattering of the ultrasonic wave may be suppressed.

Abstract: A lead frame has a flag, a peripheral frame, and main tie bars coupling the flag to the peripheral frame. At least one cross tie bar extends between two of the main tie bars and an inner row of external connector pads extending from an inner side of the cross tie bar and an outer row of external connector pads extending from an outer side of the cross tie bar. Both an inner non-electrically conductive support bar and an outer non-electrically conductive support bar are attached across the two of the main tie bars. The inner non-electrically conductive support bar is attached to upper surfaces of the two of the main tie bars and to upper surfaces of the inner row of the external connector pads.

Abstract: In one embodiment, a method of forming a semiconductor package includes applying a film layer having through openings over a carrier and attaching a back side of a semiconductor chip to the film layer. The semiconductor chip has contacts on a front side. The method includes using a first common deposition and patterning step to form a conductive material within the openings. The conductive material contacts the contacts of the semiconductor chip. A reconfigured wafer is formed by encapsulating the semiconductor chip, the film layer, and the conductive material in an encapsulant using a second common deposition and patterning step. The reconfigured wafer is singulated to form a plurality of packages.

Abstract: A packaging structure for plural bare chips includes a substrate, a plurality of bare light-emitting chips, and a transparent light guide. The substrate has a supporting surface. The bare light-emitting chips are disposed on the supporting surface of the substrate. The transparent light guide covers and seals up the bare light-emitting chips, with a side of the transparent light guide facing away from the supporting surface forming a light-outputting layer with a light gathering member. Alternatively, a reflective layer can be arranged on the supporting surface and covered by the transparent light guide. Accordingly, a packaging structure for plural bare chips with high illuminous efficiency, high heat-dissipating efficiency, and low cost of manufacture is provided.

Abstract: A semiconductor device with efficient heat dissipating structures is disclosed. The semiconductor device includes a first semiconductor chip that is flip-chip mounted on a first substrate, a heat absorption portion that is formed between the first semiconductor chip and the first substrate, an outer connection portion that connects the first semiconductor chip to an external device and a heat conduction portion formed between the heat absorption portion and the outer connection portion to dissipate heat generated by the first semiconductor chip.

Abstract: In one implementation, an apparatus includes a semiconductor die, a lead, a non-conductive epoxy, and a conductive epoxy. The semiconductor die includes an upper surface and a lower surface opposite the upper surface. The lead is electrically coupled to the upper surface of the semiconductor die. The non-conductive epoxy is disposed on a first portion of the lower surface of the semiconductor die. The conductive epoxy is disposed on a second portion of the lower surface of the semiconductor die. In some implementations, a conductive wire extends from the lead to the upper surface of the semiconductor die to electrically couple the lead to the upper surface of the semiconductor die.

Abstract: A microelectronic unit can include a lead frame and a device chip. The lead frame can have a plurality of monolithic lead fingers extending in a plane of the lead frame. Each lead finger can have a fan-out portion and a chip connection portion extending in the lead frame plane. The fan-out portions can have first and second opposed surfaces and a first thickness in a first direction between the opposed surfaces. The chip connection portions can have a second thickness smaller than the first thickness. The chip connection portions can define a recess below the first surface. The device chip can have a plurality of at least one of passive devices or active devices. The device chip can have contacts thereon facing the chip connection portions and electrically coupled thereto. At least a portion of a thickness of the device chip can extend within the recess.

Abstract: To suppress a short circuit between neighboring wires which is caused when the loop of a wire is formed into multiple stages in a semiconductor device in which a wiring board and one semiconductor chip mounted over a main surface thereof are electrically coupled with the wire. In a semiconductor device in which a chip is mounted on an upper surface of a wiring board and a bonding lead of the wiring board and a bonding pad of the chip are electrically coupled with wires, a short circuit between the neighboring wires is suppressed by making larger the diameter of the longest wire arranged in a position closest to a corner part of the chip than the diameter of the other wires.

Abstract: An electronic assembly includes a workpiece, a through substrate via (TSV) die including a substrate and a plurality of TSVs, a topside and a bottomside having TSV connectors thereon. The TSV die is attached to the workpiece with its topside on the workpiece. A heat spreader having an inner open window is on the bottomside of the TSV die. Bonding features are coupled to the TSV connectors or include the TSV connectors themselves. The bonding features protrude from the inner open window to a height above a height of the top of the heat spreader that allows a top die to be bonded thereto.

Abstract: There are disclosed herein various implementations of semiconductor packages having a selectively conductive film interposer. In one such implementation, a semiconductor package includes a first active die having a first plurality of electrical connectors on a top surface of the first active die, a selectively conductive film interposer situated over the first active die, and a second active die having a second plurality of electrical connectors on a bottom surface of the second active die. The selectively conductive film interposer may be configured to serve as an interposer and to selectively couple at least one of the first plurality of electrical connectors to at least one of the second plurality of electrical connectors.

Abstract: Provided is a double-sided cooling structure for a semiconductor device using a low processing temperature and reduced processing time utilizing solid phase diffusion bonding. The fabrication method for this system is provided. The semiconductor device 1 comprising: a mounting substrate 70; a semiconductor chip 10 disposed on the mounting substrate 70 and a semiconductor substrate 26, a source pad electrode SP and a gate pad electrode GP disposed on a surface of the semiconductor substrate 26, and a drain pad electrode 36 disposed on a back side surface of the semiconductor substrate 26 to be contacted with the mounting substrate 70; and a source connector SC disposed on the source pad electrode SP. The mounting substrate 70 and the drain pad electrode 36 are bonded by using solid phase diffusion bonding.

Abstract: A method for forming a molded die assembly includes attaching a first major surface of a semiconductor die onto a package substrate; attaching a heat spreader to a second major surface of the semiconductor die, wherein the second major surface is opposite the first major surface, and wherein the semiconductor die, package substrate, and heat spreader form a die assembly; conforming a die release film to a transfer mold; closing the transfer mold around the die assembly such that the die release film is compressed against the heat spreader and a cavity is formed around the die assembly; transferring a thermoset material into the cavity; and releasing the die assembly from the die release film and the transfer mold.