Abstract: A method for fabricating a light-emitting integrated device, comprises overlying three layers, wherein each of the three layers emits light at a different wavelength, and wherein the overlying comprises one of: performing an atomic species implantation, performing a laser lift-off, performing an etch-back, or chemical-mechanical polishing (CMP).

Abstract: A light emitting diode includes a substrate, a number of light emitting units formed on the substrate, and an insulating layer. Each light emitting unit includes a first electrode layer, a number of light emitting nanowires and a second electrode layer. Each light emitting nanowire includes a zinc-oxide-nanowire buffering segment extending from the first electrode layer, an N-type gallium nitride nanowire segment and a P-type gallium nitride nanowire segment. The N-type gallium nitride nanowire segment is interconnected between the zinc-oxide-nanowire buffering segment and the P-type gallium nitride nanowire segment. The P-type gallium nitride nanowire segment has a distal portion embedded in the second electrode layer. The insulating layer is formed on the substrate and the first electrode layer. The light emitting nanowires is embedded in the insulating layer and insulated from each other.

Abstract: A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range.

Abstract: Certain example embodiments of this invention relate to techniques for improving the performance of Lambertian and non-Lambertian light sources. In certain example embodiments, this is accomplished by (1) providing an organic-inorganic hybrid material on LEDs (which in certain example embodiments may be a high index of refraction material), (2) enhancing the light scattering ability of the LEDs (e.g., by fractal embossing, patterning, or the like, and/or by providing randomly dispersed elements thereon), and/or (3) improving performance through advanced cooling techniques. In certain example instances, performance enhancements may include, for example, better color production (e.g., in terms of a high CRI), better light production (e.g., in terms of lumens and non-Lambertian lighting), higher internal and/or external efficiency, etc.

Abstract: An optical duplexer intended to receive light at a first optical wavelength and to transmit back light at a second optical wavelength, including, on a substrate, successive layers forming a photoreceptor of the first optical wavelength, a selective filter letting through the first optical wavelength, and a waveguide having a surface including a grating which is transparent for the first optical wavelength and diffracting for the second optical wavelength.

Abstract: An electrooptical device having a plurality of light-emitting regions includes a substrate, a bank disposed in a region other than the light-emitting regions on the substrate so as to surround the light-emitting regions, and a functional layer disposed in openings surrounded by the bank. The bank includes an upper bank segment and a plurality of lower bank segments having a higher wettability than the upper bank segment. The number of the lower bank segments exposed is smaller in second regions of the openings than in first regions of the openings.

Abstract: A device structure includes a substrate; a group-III nitride layer over the substrate; a metal nitride layer over the group-III nitride layer; and a light-emitting layer over the metal nitride layer. The metal nitride layer acts as a reflector reflecting the light emitted by the light-emitting layer.

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Abstract: Disclosed are a light emitting device, a light emitting device package and a lighting system. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer over the first conductive semiconductor layer, and a second conductive semiconductor layer over the active layer; a dielectric layer over a first region of the first conductive semiconductor layer; a second electrode over the dielectric layer; and a first electrode over a second region of the first conductive semiconductor layer.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a passivation layer protecting a surface of the light emitting structure. The passivation layer includes a first passivation layer on a top surface of the light emitting structure and a second passivation layer having a refractive index different from that of the first passivation layer, the second passivation layer being disposed on a side surface of the light emitting structure. The second passivation layer has a refractive index greater than that of the first passivation layer.

Abstract: There is provided a method of growing a nitride single crystal. A method of growing a nitride single crystal according to an aspect of the invention may include: growing a first nitride single crystal layer on a substrate; forming a dielectric pattern having an open area on the first nitride single crystal layer, the open area exposing a part of an upper surface of the first nitride single crystal layer; and growing a second nitride single crystal layer on the first nitride single crystal layer through the open area while the second nitride single crystal layer grows to be equal to or larger than a height of the dielectric pattern, wherein the height of the dielectric pattern is greater than a width of the open area so that dislocations in the second nitride single crystal layer move laterally, collide with side walls of the dielectric pattern, and are terminated.

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.

Abstract: The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact.

Abstract: A semiconductor structure includes a substrate which may be formed from a ZnS single crystal of wurtzite (2H) structure with a predetermined crystal orientation, and which has a first surface and a second surface. The structure includes a layer of a group III-nitride crystalline material deposited as an epitaxial layer on the first surface of the substrate. In one embodiment, the group III-nitride deposit is epitaxially grown using a MOCVD (or MOVPE) technique or a HVPE technique or a combination thereof. There may be a mask and/or a buffer layer on the first surface and/or a protective layer on the second surface.

Abstract: An organic light emitting device having multiple separate emissive layers is provided. Each emissive layer may define an exciton formation region, allowing exciton formation to occur across the entire emissive region. By aligning the energy levels of each emissive layer with the adjacent emissive layers, exciton formation in each layer may be improved. Devices incorporating multiple emissive layers with multiple exciton formation regions may exhibit improved performance, including internal quantum efficiencies of up to 100%.

Abstract: The present invention discloses a light device and a fabrication method thereof. An object of the present invention is to provide the light device and the fabrication method thereof an electric/thermal/structural stability is obtained, and a P-type electrode and an N-type electrode can be simultaneously formed. In order to achieve the above object, the inventive light device includes: a GaN-based layer; a high concentration GaN-based layer formed on the GaN-based layer; a first metal-Ga compound layer formed on the high concentration GaN-based layer; a first metal layer formed on the first metal-Ga compound layer; a third metal-Al compound layer formed on the first metal layer; and a conductive oxidation preventive layer formed on the third metal-Al compound layer.

Abstract: A method of making a semiconductor light emitting device having one or more light emitting surfaces includes positioning a stencil on a substrate such that a chip disposed on the substrate is positioned within an opening in the stencil. Phosphor-containing material is deposited in the opening to form a coating on one or more light emitting surfaces of the chip. The opening may or may not substantially conform to a shape of the chip. The phosphor-containing material is cured with the stencil still in place. After curing, the stencil is removed from the substrate and the coated chip is separated from the substrate. The chip may then be subjected to further processing.

Abstract: A light emitting diode is provided, comprising: a substrate; a metal wiring layer disposed on the substrate; alight emitting element provided on the metal wiring layer; wherein the light emitting element comprises: a semiconductor light emitting layer having a first semiconductor layer, an active layer, and a second semiconductor layer formed from the substrate side sequentially; a transparent insulating layer provided on the substrate side of the semiconductor light emitting layer; a first electrode part and a second electrode part provided on the substrate side of the transparent insulating layer in such a manner as being separated from each other, and joined to the metal wiring layer; a first contact part provided so as to pass through the transparent insulating layer and electrically connecting the first electrode part and the first semiconductor layer; and a second contact part provided so as to pass through the transparent insulating layer, the first semiconductor layer, and the active layer, and electr

Abstract: In the Group III nitride-based compound semiconductor light-emitting device of the invention, an non-light-emitting area is formed in a light-emitting layer. In a light-emitting diode where light is extracted on the side of an n-layer, an outer wiring trace portion and an inner wiring trace portion of an n-contact electrode impedes light emission from the light-emitting layer. Therefore, there are provided, at the interface between a p-layer and a p-contact electrode, high-resistance faces having a width wider than the orthogonal projections of contact areas between the outer and inner wiring trace portions and the n-layer on the interface between the p-contact electrode and the p-layer. Through this configuration, current flow is limited, and portions having a total area equivalent to that of the high-resistance faces of the light-emitting layer serve as non-light-emitting areas.

Abstract: A light emitting device package comprises: a substrate; first and second conduction members on the substrate; a light emitting diode on the substrate, the light emitting diode being electrically connected with the first and second conduction members; and a phosphor layer on the light emitting diode.

Abstract: A light-emitting device includes a cathode, an anode, a first light-emitting layer that is disposed between the cathode and the anode and that emits light of a first color, a second light-emitting layer that is disposed between the first light-emitting layer and the cathode and that emits light of a second color different from the first color, and an intermediate layer that is disposed between and in contact with the first light-emitting layer and the second light-emitting layer and that contains a first material and a second material different from the first material. The light-emitting device satisfies inequality (1): LLA?LLB?0.4 [eV]??(1) wherein LLA [eV] is the energy level of the lowest unoccupied molecular orbital of the first material, and LLB [eV] is the energy level of the lowest unoccupied molecular orbital of the second material.

Abstract: A display substrate includes a base substrate, a barrier pattern, a source electrode, a drain electrode, a semiconductor layer, an insulating layer, and a gate electrode. The barrier pattern protrudes from the base substrate. The source and gate electrodes are formed adjacent to opposite sides of the barrier pattern on the base substrate. The semiconductor layer is provided on the barrier pattern to connect the source electrode with the drain electrode, and the insulating layer covers the semiconductor layer, the source electrode, and the drain electrode. The gate electrode is provided on the insulating layer, and is overlapped with the semiconductor layer.

Abstract: To provide a highly reliable semiconductor device including an oxide semiconductor. Further to provide a highly reliable light-emitting device including an oxide semiconductor. A second electrode sealed together with a semiconductor element including an oxide semiconductor hardly becomes inactive. A hydrogen ion and/or a hydrogen molecule produced by reaction of the active second electrode with moisture remaining in the semiconductor device and/or moisture entering from the outside of the device increase the carrier concentration in the oxide semiconductor, which causes a reduction in the reliability of the semiconductor device. An adsorption layer of a hydrogen ion and/or a hydrogen molecule may be provided on the other surface side of the second electrode having one surface in contact with the organic layer. Further, an opening which a hydrogen ion and/or a hydrogen molecule passes through may be provided for the second electrode.

Abstract: An embodiment of the present invention has an insulating substrate in which a first concave hole for mounting an LED chip and a second concave hole for connecting a metallic small-gauge wire are formed, where a metallic sheet that serves as a first wiring pattern is formed at a portion that includes the first concave hole, a metallic sheet that serves as a second wiring pattern is formed at a portion that includes the second concave hole, an LED chip is mounted upon the metallic sheet inside the first concave hole, the LED chip is electrically connected to the metallic sheet inside the second concave hole via a metallic small-gauge wire, and the chip-type LED is sealed with a clear resin.

Abstract: Manufacturing a laser diode includes growing an active layer, a first InP layer, and a diffraction grating layer; forming an alignment mark having a recess by etching the diffraction grating layer and the first InP layer; forming a first etching mask; forming a diffraction grating in the diffraction grating layer using the first etching mask; forming a modified layer containing InAsP on a surface of the alignment mark recess by supplying a first source gas containing As and a second source gas containing P; growing a second InP layer on the diffraction grating layer and on the alignment mark; forming a second etching mask on the second InP layer; selectively etching the second InP layer embedded in the recess of the alignment mark through the second etching mask by using the modified layer serving as an etching stopper; and forming a waveguide structure using the alignment mark.

Abstract: An electronically active sheet includes a bottom substrate having a bottom electrically conductive surface. A top substrate having a top electrically conductive surface is disposed facing the bottom electrically conductive surface. An electrical insulator separates the bottom electrically conductive surface from the top electrically conductive surface. At least one bare die electronic element is provided having a top conductive side and a bottom conductive side. Each bare die electronic element is disposed so that the top conductive side is in electrical communication with the top electrically conductive surface and so that the bottom conductive side is in electrical communication with the bottom electrically conductive surface.

Abstract: A display device including a transparent substrate, and a plurality of thin film transistors formed on the transparent substrate, wherein each of the thin film transistors have a gate electrode, a source electrode and a drain electrode, a first semiconductor film, an insulation film, a second semiconductor film, and a third semiconductor film. The third semiconductor film is connected with the source electrode and the drain electrode by an ohmic contact, and the second semiconductor film is formed below the third semiconductor film and has a resistance higher than resistance of the third semiconductor film.

Abstract: The present disclosure provides systems and methods for forming a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite the first side. A first heat producing element is formed on the first side of the substrate. A second heat producing element is formed on the first side of substrate co-planar with, but not touching the first heat producing element. A heat spreader is coupled to the second side of the substrate using a thermal interface material. The heat spreader includes a first and second vapor chambers. The first vapor chamber is embedded in the heat spreader substantially opposite the first heat producing element. The second vapor chamber is embedded in the heat spreader substantially opposite the second heat producing element. As an example, the first heat producing element may be a light-emitting diode (LED) and the second heat producing element may be a driver circuit for the LED.

Abstract: A light emitting diode comprises a substrate, a buffer layer, a semiconductor layer and a semiconductor light emitting layer. The buffer layer is disposed on the substrate. The semiconductor layer is disposed on the buffer layer. The semiconductor light emitting layer is disposed on the semiconductor layer. A plurality of voids is defined within the semiconductor layer. Each void encloses air therein. A method for manufacturing the light emitting diode is also provided. Light generated by the semiconductor light emitting layer toward the substrate is reflected by the voids to emit out of the light emitting diode.

Abstract: A semiconductor light-emitting device has an n-type DBR layer (3), an n-type cladding layer (4), an active layer (5), a p-type cladding layer (6), a p-type intermediate layer (7), a p-type contact layer (8), a p-type transparent substrate (9), ohmic electrodes (10 and 11), and a reflecting layer (12). The n-type DBR layer (3) has reflectivity for the emission wavelength of the active layer (5).

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a substrate and a light emitting structure. The substrate comprises a plurality of discontinuous fusion spots on at least one side surface thereof. The light emitting structure comprises a plurality of compound semiconductor layers on the substrate.

Abstract: A method for manufacturing a display apparatus includes preparing first and second substrates, forming a bonding spacer on the first substrate having a first height, forming a supporting spacer on the second substrate having a second height less than the first height, forming an image display part on one of the first substrate or the second substrate, and coupling the first substrate and the second substrate together until an upper surface of the supporting spacer contacts the first substrate and the second substrate is bonded to the bonding spacer.

Abstract: The present invention provides a substrate for LED packaging and a fabrication method thereof. The substrate can dissipate heat quickly and enhance light emitting efficiency. For this purpose, several via holes are formed in the substrate and metal layers are coated to act as light reflector. In the substrate, the via holes are filled with the material with high thermal conductivity, such as Copper, to conduct the heat efficiently; and the reflector are coated the metal with high reflection factor to visible light, such as Ag, Au, Al, to enhance the light emitting efficiency.

Abstract: A light emitting diode package comprises a substrate with a first surface and a second surface opposite to each other, a circuit on the substrate, a support on the substrate for reinforcing strength of the substrate, a plurality of light emitting diodes on the substrate and electrically connected to the circuit, and a cover layer on the plurality of light emitting diodes. A method for manufacturing a light-emitting diode package is further provided.

Abstract: A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

Abstract: An electroluminescent device comprising: a first charge carrier injecting layer for injecting positive charge carriers; a second charge carrier injecting layer for injecting negative charge carriers; and a light-emissive layer located between the charge carrier injecting layers and comprising a mixture of: a first component for accepting positive charge carriers from the first charge carrier injecting layer; a second component for accepting negative charge carriers from the second charge carrier injecting layer; and a third, organic light-emissive component for generating light as a result of combination of charge carriers from the first and second components; at least one of the first, second and third components forming a type II semiconductor interface with another of the first, second and third components.

Abstract: A liquid crystal display includes a first substrate, a second substrate having a first surface and a second surface facing the first substrate, a liquid crystal layer between the first and second substrates, and a touch sensor layer on the first surface. The touch sensor layer includes a first electrode in a first direction on the first surface, a second electrode in a second direction crossing the first direction on the first surface and including first and second portions that are separated by the first electrode, a bridge wire including first and second contacts on the first surface. The first contact is electrically connected to the first portion of the second electrode, and the second contact is electrically connected to the second portion of the second electrode. An insulating layer insulates the bridge wire from the first electrode and exposes the first contact and the second contact.

Abstract: A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a first depressed portion, a second depressed portion, a stacked structure disposed on the second depressed portion and a remained first semiconductor layer disposed on the depressed portion, wherein the stacked structure comprises a patterned second semiconductor layer, a patterned emitting layer, and a patterned first semiconductor layer; forming a first electrode on the remained first semiconductor layer of the first depressed portion; and forming a second electrode correspondingly disposed on the patterned second semiconductor layer of the second depressed portion.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting portion, a first transparent conductive layer, and a second transparent conductive layer. The light emitting portion is provided between the first and second semiconductor layers. The second semiconductor layer is disposed between the first transparent conductive layer and the light emitting portion. The first transparent conductive layer includes oxygen. The second transparent conductive layer is provided between the second semiconductor layer and the first transparent conductive layer. The second transparent conductive layer has a refractive index higher than a refractive index of the first transparent conductive layer, and includes oxygen at a concentration higher than a concentration of oxygen included in the first transparent conductive layer.

Abstract: An organic light emitting diode display device having a frit which can improve mechanical strength and adhesion between the upper substrate and the lower substrate, and a method of fabricating the same are disclosed. The organic light emitting diode display device includes a lower substrate, an organic light emitting diode disposed on the lower substrate, an upper substrate to be coupled to the lower substrate, and a frit disposed between the lower substrate and the upper substrate to couple both the lower substrate and the upper substrate to each other where the frit has a plurality of pores.

Abstract: A semiconductor device, a print head comprising the semiconductor device and an image forming apparatus comprising the print head are supplied which are able to reduce cost through miniaturizing element size and minishing chip area. The semiconductor device comprises a plurality of light emitting elements; and a shift register circuit that has output terminals respectively corresponding to the plurality of light emitting elements and stores emitting-light instruction data of the light emitting elements, wherein each light emitting element has a first electrode and a second electrode to that lightening electricity of the light emitting element flows, and a third electrode for controlling the light emitting element whether to emit light, the output terminals of the shift register circuit are respectively connected with the third electrodes of the corresponding light emitting element.

Abstract: A method of fabricating optoelectronic devices with embedded void-gap structures on semiconductor layers through bonding is provided. The embedded void-gaps are fabricated on a semiconductor structure by bonding a patterned layer or slab onto a flat surface, or by bonding a flat layer or slab onto a patterned surface. The void-gaps can be filled with air, gases, conductive or dielectric materials, or other substances, in order to provide better isolation of optical modes from dissipative regions, or better light extraction properties.

Abstract: An organic light-emitting display apparatus includes a plurality of pixels arranged on a substrate, each pixel includes: a display region including at least one pixel thin film transistor and an organic light-emitting device electrically connected to the pixel thin film transistor; and a sensor region electrically connected to the display region to affect an image display of the display region.

Abstract: The present invention provides a light emitting device. The light emitting device has a light distribution in which a light distribution I (?, ?) obtained when light emitted from a chip of the light emitting device is directly measured is not dependent on a direction ? and is substantially represented by I (?, ?)=I (?). I (?, ?) represents a light intensity distribution in a direction (?, ?), ? represents an angle from a direction of a normal to a light extraction surface of the light emitting device (0???90°), ? represents a rotation angle around the normal (0???360°), and I (?) represents a monotone decreasing function with which 0 is approached when ?=90° is satisfied.

Abstract: A thin film deposition apparatus includes: a deposition source for discharging a deposition material; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; a patterning slit sheet disposed opposite to the deposition source nozzle unit and having a plurality of patterning slits arranged in the first direction; a barrier plate assembly including a plurality of barrier plates that are disposed between the deposition source nozzle unit and the patterning slit sheet in the first direction, the plurality of barrier plates partitioning a deposition space between the deposition source nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces; and a capacitive vacuum gauge disposed at a side of the deposition source and configured to measure a pressure inside the deposition source.

Abstract: An array substrate for a display device includes a substrate; gate and data lines crossing each other on the substrate to define a pixel region; a thin film transistor connected to the gate and data lines and including a gate electrode, a gate insulating layer on the gate electrode, an active layer on the gate insulating layer, an ohmic contact layer on the active layer, and source and drain electrodes on the ohmic contact layer; and a pixel electrode connected to the drain electrode, wherein the source and drain electrodes are separated from each other to define a separate region, wherein the separate region includes first to third regions in different directions, and wherein the active layer is removed in at least one of the first to third regions.

Abstract: A stacked organic light-emitting device having a first organic compound layer and a second organic compound layer stacked on a substrate includes: a first light-emitting device in which the first organic compound layer is sandwiched between a first electrode and a second electrode; and a second light-emitting device in which the second organic compound layer is sandwiched between the second electrode and a third electrode. An electrode of a TFT circuit which is electrically connected to the third electrode is formed on the substrate in a region different from a region in which the first light-emitting device and the second light-emitting device emit light. In order to prevent the third electrode which extends to the electrode of the TFT circuit from being electrically connected to the second electrode, the second organic compound layer is formed so as to cover an end portion of the second electrode.

Abstract: A light emitting diode packaging structure includes a package body, a red LED chip, a blue LED chip, a green LED chip, a package material and a yellow phosphor. Three LED chips are disposed within an accommodating room of the body package and covered by the package material. The yellow phosphor is uniformly mixed with the package material. A white light is formed by a mix of three types of light from the LED chips. Additionally, a yellow light which is generated from the excitement of the yellow phosphor with the blue light is mixed with a part of the blue light to further form the white light.

Abstract: An illuminator (1) has bare semiconductor die light emitting diodes (7) on pads (11) of Ag/Ni/Ti material. A Si wafer (13) has a rough upper surface, and this roughness is carried through an oxide layer (12) and the pads (11) to provide a rough but reflective upper surface of the pads (11), thus forming a diffuser. Epoxy encapsulant (9) is deposited in a layer over the diodes (7) and the pads (11), and it is index matched with a top diffuser plate (8) of opal glass.

Abstract: An optoelectronic component with a desired color impression in the switched-off state includes, in particular, a semiconductor layer sequence with an active region, that during operation radiates electromagnetic radiation with a first spectrum, and a wavelength conversion layer that is disposed downstream from the semiconductor layer sequence in the beam path of the electromagnetic radiation with the first spectrum, and that at least partially converts a subspectrum of the electromagnetic radiation with the first spectrum into electromagnetic radiation with a second spectrum, and a filter layer that reflects at least a part of the radiation incident from outside onto the optoelectronic component.