Abstract: The purpose of the present invention is to obtain a nitride-based semiconductor light emitting element capable of improving light emission efficiency by reducing sheet resistance and a forward voltage of a translucent electrode including indium cerium oxide. The nitride-based semiconductor light emitting element of the present invention is has a translucent electrode including indium cerium oxide; and cerium oxide is contained in a ratio of 10 to 20 wt % with respect to a whole of the indium cerium oxide.

Abstract: A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on a main surface of a substrate and having an emission layer, wherein the nitride-based semiconductor layer includes a first side surface formed by a (000-1) plane and a second side surface inclined with respect to the first side surface, and a ridge having an optical waveguide extending perpendicular to a [0001] direction in an in-plane direction of the main surface of the substrate is formed by a region held between the first side surface and the second side surface.

Abstract: A nitride semiconductor light emitting device includes a nitride semiconductor multilayer film. The nitride semiconductor multilayer film is formed on a substrate and made of nitride semiconductor crystals, and includes a light emitting layer. In the nitride semiconductor multilayer film, facets of a cavity are formed, and a protective film made of aluminum nitride crystals is formed on at least one of the facets. The protective film has a crystal plane whose crystal axes form an angle of 90 degrees with crystal axes of a crystal plane of the nitride semiconductor crystals constituting the facet of the cavity having the protective film formed thereon.

Abstract: The present invention provides a substrate and a semiconductor light emitting device. Convexes having a curved surface are formed on the substrate. The semiconductor light emitting device comprises a substrate on which convexes having a curved surface are formed and a semiconductor layer on the substrate.

Abstract: A small-sized and high-efficiency light emitting device capable of easily emitting green light includes a resonator including a photonic crystal having a refractive-index periodic structure and a point defect member formed in the photonic crystal to disturb the refractive-index periodic structure, and an active member provided inside the resonator and formed by an In containing nitride semiconductor, wherein a wavelength determined by a band gap energy of the active member is included in a photonic band gap range of the photonic crystal, and is set to be shorter than a peak wavelength at a shortest-wavelength side of a resonance mode of the resonator in the photonic band gap range.

Abstract: A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

Abstract: A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconductor layer using photolithography and etching processes; forming a second Group III nitride semiconductor layer on the patterned first Group III nitride semiconductor layer; forming a conductive layer on the second Group III nitride semiconductor layer; and releasing the temporary substrate by removing the first Group III nitride semiconductor layer to obtain a composite of the second Group III nitride semiconductor layer and the conductive layer.

Abstract: A group III nitride semiconductor thin film and a group III nitride semiconductor light emitting device using the same. The group III nitride semiconductor thin film includes a substrate with a concave and convex portions formed thereon; a buffer layer formed on the substrate and made of a group III nitride; and an epitaxial growth layer formed on the buffer layer and made of (11-20) plane gallium nitride. The group III nitride light emitting device includes the group III nitride semiconductor thin film. The present invention allows a high quality a-plane group III nitride semiconductor thin film and a group III nitride semiconductor light emitting device using the same.

Abstract: There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.

Abstract: An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having excellent light extraction efficiency and a high emission output in which a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length. The present light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer formed on the substrate, wherein a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length, and a side surface of the gallium nitride-based compound semiconductor layer is not vertical to a principal surface of the substrate.

Abstract: The present invention provides a nitride semiconductor light emitting device having an n-electrode that has an Au face excellent in ohmic contacts to an n-type nitride semiconductor and excellent in mounting properties, and a method of manufacturing the same. The nitride semiconductor light emitting device uses an n-electrode having a three-layer laminate structure that is composed of a first layer containing aluminum nitride and having a thickness not less than 1 nm or less than 5 nm, a second layer containing one or more metals selected from Ti, Zr, Hf, Mo, and Pt, and a third layer made of Au, from the near side of the n-type nitride semiconductor in order of mention. The n-electrode thus formed is then annealed to obtain ohmic contacts to the n-type nitride semiconductor.

Abstract: A light-emitting diode (10) includes a transparent substrate and a compound semiconductor layer that contains a light-emitting part (12) containing a light-emitting layer (133) formed of (AlXGa1?X)YIn1?YP; in which 0?X?1 and 0<Y?1), and that is joined to the transparent substrate (14). wherein the light-emitting diode (10) has on a main light-extracting surface thereof a first electrode (15) and a second electrode (16) different in polarity from the first electrode, the transparent substrate has side faces that are a first side face (142) roughly perpendicular to a light-emitting surface of the light-emitting layer on a side near the light-emitting layer and a second side face (143) inclined relative to the light-emitting surface on a side distant from the light-emitting layer and coarsened with irregularities falling in a range of 0.05 ?m to 3 ?m The light-emitting diode provided on the light-extracting surface with the two electrodes manifests a high efficiency of light extraction and high brightness.

Abstract: A group III nitride semiconductor light emitting device with a double sided electrode structure which has a low driving voltage as well as excellent light emission efficiency is provided, and the group III nitride semiconductor light emitting device includes at least an impurity layer 30 composed of a high concentration layer 3b made of a group III nitride semiconductor containing high concentration of impurity atoms, and a low concentration layer 3a made of a group III nitride semiconductor containing impurity atoms whose concentration is lower than that of the high concentration layer 3b; and a group III nitride semiconductor layer 2, and the lower concentration layer 3a and the high concentration layer 3b are continuously formed on the group III nitride semiconductor layer 2 in this order to form the group III nitride semiconductor light emitting device.

Abstract: In a laser chip 1 using a nitride semiconductor having a hexagonal crystal structure, the ?c plane is used as a first resonator facet A, which is the side of the laser chip 1 through which light is emitted. On the first resonator facet A, that is, on the ?c plane, a facet protection film 14 is formed. This ensures firm joint between the first resonator facet A and the facet protection film 14 and alleviates deterioration of the first resonator facet A.

Abstract: An etching process includes forming a metal-fluoride layer at least as a part of an etching mask formed over a semiconductor layer at a temperature of 150° C. or higher; patterning the metal-fluoride layer; and etching the semiconductor layer using the patterned metal-fluoride layer as a mask. Using this etching method, even an etching-resistant semiconductor layer such as a Group III-V nitride semiconductor can be easily etched by a relatively simpler process.

Abstract: A method of producing an optoelectronic substrate by detaching a thin layer from a semi-conducting nitride substrate and transferring it to an auxiliary substrate to provide at least one semi-conducting nitride layer thereon, metallizing at least a portion of the surface of the auxiliary substrate that includes the transferred nitride layer, bonding to a final substrate the metallized surface portion of the transferred nitrate layer of the auxiliary substrate, and removing the auxiliary substrate to provide an optoelectronic substrate comprising a semi-conducting nitride surface layer over a subjacent metallized portion and a supporting final substrate. Resultant optoelectronic substrates having low dislocation densities are also included.

Abstract: A light emitting diode includes a current leakage passage electrically connected in parallel to an active layer to better protect the light emitting diode from static electricity. The light emitting diode includes a substrate, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer, a p-type semiconductor layer on the active layer, a p-electrode on the p-type semiconductor layer, and an n-electrode formed from the n-type semiconductor layer, exposed by etching, to a portion of the p-type semiconductor layer.

Abstract: A group-III nitride compound semiconductor device of the present invention comprises a substrate, an intermediate layer provided on the substrate, and a base layer provided on the intermediate layer in which a full width at half maximum in rocking curve of a (0002) plane is 100 arcsec or lower and a full width at half maximum in rocking curve of a (10-10) plane is 300 arcsec or lower. Also, a production method of a group-III nitride compound semiconductor device of the present invention comprises forming the intermediate layer by using a sputtering method.

Abstract: A nitride-based light emitting device is manufactured by using a single-crystal nitride-based semiconductor substrate. A seed material layer is deposited on a first substrate where organic residues including a natural oxide layer are removed from an upper surface of the first substrate. A multifunctional substrate is grown from the seed material layer. The single-crystal nitride-based semiconductor layer including a nitride-based buffer layer is formed on the multifunctional substrate. The seed material layer primarily assists the growth of the multifunctional substrate, which is essentially required for the growth of the single-crystal nitride-based semiconductor substrate. The multifunctional substrate is prepared in the form of a single-crystal layer or a poly-crystal layer having a hexagonal crystalline structure.

Abstract: Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. In the nitride semiconductor light emitting element, a buffer layer 2, an undoped GaN layer 3, an n-type GaN contact layer 4, an InGaN/GaN superlattice layer 5, an active layer 6, an undoped GaN-based layer 7, and a p-type GaN-based contact layer 8 are stacked on a sapphire substrate 1. A p-electrode 9 is formed on the p-type GaN-based contact layer 8. An n-electrode 10 is formed on a surface where the n-type GaN contact layer 4 is exposed as a result of mesa-etching. An intermediate semiconductor layer is formed between a well layer closest to a p-side in the active layer having a quantum well structure and the p-type GaN-based contact layer 8.

Abstract: The present invention discloses a semiconductor light emitting device including an active layer for generating light by recombination of electron and hole between a first semiconductor layer having first conductivity and a second semiconductor layer having second conductivity different from the first conductivity, the second semiconductor layer being disposed on the active layer. The semiconductor light emitting device comprises first array including a trench having a first inclination angle, and second array including a trench having a second inclination angle different from the first inclination angle.

Abstract: The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured using the same. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention includes: forming a mask layer on a substrate; removing a portion of the mask layer to form openings provided as regions where light emitting structures are formed; forming a light emitting structure by sequentially growing a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer on the substrate through each of the openings of the mask layer; and forming first and second electrodes to be electrically connected to the first and second conductivity type nitride semiconductor layers, respectively.

Abstract: A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. The nitride semiconductor layer is formed of the same constituent elements of the semiconductor substrate. A composition ratio of the lightest element among the group III elements of the nitride semiconductor layer is higher than a composition ratio of the corresponding element of the semiconductor substrate.

Abstract: The present invention relates to a nitride semiconductor light emitting device including: a substrate having a predetermined pattern formed on a surface thereof by an etch; a protruded portion disposed on a non-etched region of the substrate, and having a first buffer layer and a first nitride semiconductor layer stacked thereon; a second buffer layer formed on the etched region of the substrate; a second nitride semiconductor layer formed on the second buffer layer and the protruded portion; a third nitride semiconductor layer formed on the second nitride semiconductor layer; an active layer formed on the third nitride semiconductor layer to emit light; and a fourth nitride semiconductor layer formed on the active layer. According to the present invention, the optical extraction efficiency of the nitride semiconductor light emitting device can be enhanced.

Abstract: A nitride semiconductor light emitting device and a method of manufacturing the same, which can prevent crystal defects such as dislocation while ensuring uniform current spreading into an active layer. The nitride semiconductor light emitting device includes a first n-nitride semiconductor layer formed on a substrate, a first intermediate pattern layer formed on the first n-nitride semiconductor layer, the first intermediate pattern layer having a nanoscale dot structure made of Si compound, a second n-nitride semiconductor layer formed on the first n-nitride semiconductor layer, a second intermediate pattern layer formed on the second n-nitride semiconductor layer, the second intermediate pattern layer having a nanoscale dot structure made of Si compound, which is electrically insulating, a third n-nitride semiconductor layer formed on the second n-nitride semiconductor layer, an active layer formed on the third n-nitride semiconductor layer, and a p-nitride semiconductor layer formed on the active layer.

Abstract: A substrate for light-emitting diodes, which uses no fluorescent powder, enables formation of a good light-emitting diode element, resulting in less deterioration, transmits light of the light-emitting diode element, emits light by utilizing a part of the transmitted light, and allows the transmitted light and newly emitted light to be mixed and emitted, is provided. The substrate for light-emitting diodes of the present invention is a substrate for light-emitting diodes, obtained by stacking a single crystal layer enabling to form a light-emitting diode element thereon and a ceramic composite layer for light conversion comprising a solidified body having formed therein at least two or more oxide phases selected from a single metal oxide and a complex metal oxide to be continuously and three-dimensionally entangled with each other, wherein at least one oxide phase out of oxide phases in the solidified body contains a metal element oxide capable of emitting fluorescence.

Abstract: A nitride semiconductor laser diode has a quantum well layer consisting of a mixed crystal of Alx1Iny1Ga1-x1-y1N (x1?0.5, y1?0 and 1?x1?y1?0.5) in a group III nitride semiconductor multilayer structure having a major growth surface defined by a nonpolar plane. A cavity direction of the laser diode is perpendicular to a c-axis. The major growth surface of the group III nitride semiconductor multilayer structure may be defined by an m-plane. In this case, the cavity direction may be along an a-axis.

Abstract: Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.

Abstract: There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.

Abstract: A method for manufacturing a semiconductor laser element includes forming a semiconductor laminated structure, having an active layer, on a substrate; etching the semiconductor laminated structure to form a mesa; exposing the mesa to an oxygen-containing ambient forming an oxide layer on the mesa; removing a first part of the oxide layer from the mesa at a temperature lower than a critical temperature at which bonds between atoms of the oxide layer become stronger, by etching with a gas; removing the remainder of the oxide layer from the mesa at a temperature higher than the critical temperature by etching with a gas; and forming a burying layer coating the mesa.

Abstract: It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.

Abstract: A method of growing a semi-polar nitride single crystal thin film. The method includes forming a semi-polar nitride single crystal base layer on an m-plane hexagonal system single crystal substrate, forming a dielectric pattern layer on the semi-polar nitride single crystal base layer, and growing the semi-polar nitride single crystal thin film on the semi-polar nitride single crystal base layer having the dielectric pattern layer in a lateral direction. The growing of the semi-polar nitride single crystal thin film in a lateral direction includes primarily growing the semi-polar nitride single crystal thin film in the lateral direction such that part of a growth plane on the semi-polar nitride single crystal base layer has an a-plane, and secondarily growing the semi-polar nitride single crystal thin film in the lateral direction such that sidewalls of the primarily grown semi-polar nitride single crystal thin film are combined to have a (11 22) plane.

Abstract: The present disclosure relates to a III-nitride semiconductor light emitting device which improves external quantum efficiency by using a p-type nitride semiconductor layer with a rough surface, the p-type nitride semiconductor layer including: a first nitride semiconductor layer with a first doping concentration, a second nitride semiconductor layer with a second doping concentration lower than the first doping concentration and with the rough surface, and a third nitride semiconductor layer with a higher doping concentration than a second doping concentration.

Abstract: A silicate phosphor prepared from Mg2Me+20.5Ln3Si2.5O12-2yN?3yF?1y, in which Me+2=Ca, Sr, Ba, Ln=Sc, Lu, Er, Ho, excited by one single ion or an ion pair of d, f-elements such as Ak+n=Cu+1, Ce+3, Eu+2, Ag+1, Mn+2. The phosphor has a cubic garnet architecture prepared by solid phase synthesis, and radiates at green, green-yellow, yellow-orange spectrum regions. When mixed with (Y,Gd,Ce)3Al5O12 substrate-based phosphor, the compound mixture has warm white radiation and color temperature T<4000K with high luminous intensity and high luminescence efficiency. The invention also provides a warm white semiconductor using the silicate phosphor.

Abstract: Provided is a gallium nitride semiconductor light emitting element capable of stabilizing a drive voltage by reducing carrier depletion attributable to spontaneous polarization and piezo polarization generated at the interface between an AlGaN semiconductor layer and a GaN semiconductor layer. A gallium nitride semiconductor crystal 2 including a light emitting region is formed on the R plane of a sapphire substrate 1. In addition, in another constitution, a gallium nitride semiconductor crystal 2 is formed on the A plane of a GaN substrate 3 or on the M plane of a GaN substrate 4. The growth surface of these gallium nitride semiconductor crystals 2 are not an N (nitrogen) polar face or a Ga polar face but are non-polar faces. This can decrease the strength of an electric field caused by spontaneous polarization and piezo polarization generated at the interface of GaN/AlGaN at the p side. Thus, carrier depletion can be avoided.

Abstract: An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate. The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/?m2.

Abstract: A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract: A light emitting diode (LED) chip has a multilayer semiconductor structure that is at least 10 microns thick and does not require an attached growth substrate or transfer substrate for structural rigidity or support. The multilayer semiconductor structure includes a first doped layer, a second doped layer and an active region interposed between the first doped layer and the second doped layer. Optionally, the multilayer semiconductor structure includes an undoped layer. At least one of the layers of the multilayer semiconductor structure is at least 5 microns thick and is preferably deposited by hydride vapor phase epitaxy.

Abstract: Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates and methods of manufacturing the light-emitting devices, a III nitride crystal substrate has a major face whose surface area is not less than 10 cm2 and, in a major-face principal region excluding the peripheral margin of the major face from its outer periphery to a 5 mm separation from its outer periphery, the total dislocation density is from 1×104 cm?2 to 3×106 cm?2, and the ratio of screw-dislocation density to the total dislocation density is 0.5 or greater.

Abstract: The present invention provides a manufacturing method of a group III nitride semiconductor light-emitting device, including a lamination step of forming a plurality of lamination films including a group III nitride semiconductor on a substrate, in which a substrate on which is formed a foundation layer including a monocrystalline group III nitride semiconductor is used as the substrate, and lamination films are formed on the foundation layer by a sputtering method, with the substrate including the foundation layer and a target made from a group III metal or an alloy including a group III metal being placed in a sputtering chamber.

Abstract: A nitride semiconductor device includes: a semiconductor substrate; a p-type semiconductor layer formed over the semiconductor substrate, made of a nitride semiconductor, and containing first impurities; and an insulating film contacting the p-type semiconductor layer and having an impurity region containing second impurities for trapping hydrogen. Since residual hydrogen in the p-type semiconductor layer is trapped in the impurity region, the hydrogen concentration in the impurity region is higher than that in the insulating film excluding the impurity region.

Abstract: Light-emitting devices, and related components, systems and methods are disclosed.

Abstract: A compound semiconductor light-emitting diode includes a light-emitting layer formed of aluminum-gallium-indium phosphide, a light-emitting part 13 having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer 14 bonded to one of the outermost surface layers 135 of the light-emitting part 13 and transparent to the light emitted from the light-emitting layer 133, and a bonding layer 141 formed between the supporting layer 14 and the one of the outermost surface layers 135 of the light-emitting part 13 containing oxygen atoms at a concentration of 1×1020 cm?3 or less.

Abstract: It is an object of the present invention to provides the light emitting diode having a light emitting part of an AlGaInP type, and having a current diffusion layer which includes In on a light emitting side of the light emitting part, so that the generation of hillocks is effectively inhibited and the brightness of the light emitting diode is increased.

Abstract: The present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer having high crystallinity. An embodiment of the present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer on a substrate 11 using a sputtering method. The apparatus includes: a chamber 41; a target 47 that is arranged in the chamber 41 and includes a group-III element; a first plasma generating means 51 that generates a first plasma for sputtering the target 47 to supply raw material particles to the substrate 11; a second plasma generating means 52 that generates a second plasma including a nitrogen element; and a control means that controls the first plasma generating means 51 and the second plasma generating means 52 to alternately generate the first plasma and the second plasma in the chamber 41.

Abstract: Semiconductor structures include a substantially untextured substrate layer, a textured buffer layer disposed over the substrate layer, and a semiconductor layer disposed over the textured buffer layer.

Abstract: The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the single particle layer, a hole having an inner diameter smaller than a diameter of a particle and centering on a position on the substrate where each particle constructing the single particle layer has been placed is formed by etching.