Abstract: A method for manufacturing a Group III nitride semiconductor light-emitting device according to the present invention, comprising forming, on a substrate, a semiconductor layer comprised of a Group III nitride compound semiconductor containing Ga as a Group III element by a sputtering method, wherein during the formation of the semiconductor layer, sputtering is performed under the condition where at least the surface layer of a sputtering target comprised of Ga is liquefied.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device according to embodiments comprises a first conductive type semiconductor layer; an un-doped semiconductor layer under the first conductive type semiconductor layer; and a plurality of semiconductor structure in the un-doped semiconductor layer.

Abstract: A semiconductor device includes a diamond-like carbon film formed on the substrate. A thin film is formed on the diamond-like carbon film. The thin film has a thickness thinner than the diamond-like carbon. A semiconductor thin film having a semiconductor element is bonded onto the thin film.

Abstract: The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp.

Abstract: Semiconductor process technology and devices are provided, including a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate, wherein the substrate is exposed to at least 0.01 ?mol/cm2 of one or more organometallic compounds containing Al, in a flow of less than 5 ?mol/min. The preferred embodiments are equally related to the semiconductor structure obtained by the method, and to a device comprising said structure.

Abstract: A semiconductor laser includes an active layer, a first GaAs layer formed on the active layer, the first GaAs layer including a plurality of recessed portions periodically arranged, each of the recessed portions including a bottom surface of a (100) crystal surface and a slope including a (111) A crystal surface at least in parts, the recessed portion being disposed in contact with each other or with a minimal gap between each of adjacent ones of the recessed portions, the width of the bottom surface being greater than the minimal gaps, an InGaP layer formed on the recessed portion, and a second GaAs layer formed on the InGaAs layer over the recessed portion.

Abstract: A n-type layer, a multiquantum well active layer comprising a plurality of pairs of an InGaN well layer/InGaN barrier layer, and a p-type layer are laminated on a substrate to provide a nitride semiconductor light emitting element. A composition of the InGaN barrier included in the multiquantum well active layer is expressed by InxGa1-xN (0.04?x?0.1), and a total thickness of InGaN layers comprising an In composition ratio within a range of 0.04 to 0.1 in the light emitting element including the InGaN barrier layers is not greater than 60 nm.

Abstract: A light emitting device (LED), in which a reduced polarization interlayer is formed between an electron blocking layer (EBL) and an active layer of the LED, is disclosed. The reduced polarization interlayer is made of AlxInyGa1-x-yN, where 0?x?1 and 0?y?1.

Abstract: A transparent conductive semiconductor substrate 70 comprising a light emitting layer section 24 is directly bonded on one of main surfaces on a main compound semiconductor layer 50 composed of Group III-V compound semiconductor, wherein an alkali metal atom concentration on a bonded boundary surface between the main compound semiconductor layer 50 and the transparent conductive semiconductor substrate 70 is adjusted to be equal to or greater than 1×1014 atoms/cm2 and equal to or less than 2×1015 atoms/cm2. Herewith, it provides a light emitting device capable of sufficiently decreasing boundary surface resistance between the light emitting layer section and the transparent conductive semiconductor substrate.

Abstract: An active layer (17) is provided so as to emit light having an emission wavelength in the 440 nm to 550 nm band. A first-conductivity-type gallium nitride semiconductor region (13), the active layer (17), and a second-conductivity-type gallium nitride semiconductor region (15) are arranged along a predetermined axis (Ax). The active layer (17) includes a well layer composed of hexagonal InxGa1-xN (0.16?x?0.4, x: strained composition), with the indium fraction x represented by the strained composition. The m-plane of the hexagonal InxGa1-xN is oriented along the predetermined axis (Ax). The well-layer thickness is between greater than 3 nm and less than or equal to 20 nm. Having the well-layer thickness be over 3 nm makes it possible to fabricate light-emitting devices having an emission wavelength of over 440 nm.

Abstract: A light emitting device with an electron blocking combination layer comprises an active layer, an n-type GaN layer, a p-type GaN layer, and an electron blocking combination layer which has two Group III-V semiconductor layers with different band gaps that can be deposited periodically and repeatedly on the active layer to block overflowing electrons from the active layers.

Abstract: A semiconductor light emitting device or a semiconductor device produced using a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce the structured substrate, the second average dislocation density being greater than the first average dislocation density, a light emitting region of the semiconductor light emitting device or an active region of the semiconductor device is formed in such a manner that it does not pass through any one of the second regions.

Abstract: A light emitting element includes a first electrode, a second electrode formed on a same side as the first electrode and including an area less than the first electrode, a first bump formed on the first electrode, and a second bump formed on the second electrode and including a level at a top thereof higher than that of the first bump. A flip-chip type light emitting element includes a spreading electrode, the spreading electrode including an extended part, and plural intermediate electrodes formed on the spreading electrode and arranged in a longitudinal direction of the extended part and centrally in a width direction of the extended part. The intermediate electrodes are disposed such that a distance of half a pitch thereof in the longitudinal direction is equal to or shorter than a distance from one of the intermediate electrodes to an edge of the extended part.

Abstract: A nitride semiconductor light emitting device includes: a substrate for growing nitride semiconductor of a hexagonal crystal structure; a first nitride semiconductor layer of a first conductivity type formed above the substrate; an active layer formed on the first nitride semiconductor layer for emitting light when current flows; a second nitride semiconductor layer of a second conductivity type opposite to the first conductivity type formed on the active layer; texture formed above at least a partial area of the second nitride semiconductor layer and having a plurality of protrusions of a pyramid shape, each of the protrusions including a lower layer made of nitride semiconductor doped with impurities of the second conductivity type and an upper layer made of nitride semiconductor not intentionally doped with impurities; and a transparent electrode covering surfaces of the second nitride semiconductor layer and the texture.

Abstract: A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.

Abstract: In the process for production of a gallium nitride-based compound semiconductor light emitting device, when an n-type semiconductor layer, a light emitting layer obtained by alternately stacking an n-type dopant-containing barrier layer and a well layer, and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, are grown in that order on a substrate, the ratio of the supply rates of n-type dopant and Group III element during growth of the barrier layer (M/III) is controlled to a range of 4.5×10?7?(M/III)<2.0×10?6 in terms of the number of atoms.

Abstract: A composite semiconductor light-emitting device includes a first semiconductor element portion made of a first semiconductor material and a second semiconductor element portion made of a second semiconductor material different from the first semiconductor material. The first semiconductor element portion has a first semiconductor layered structure, and the second semiconductor element portion has a second semiconductor layered structure. The first semiconductor element portion has a plurality of light-emitting regions that emit lights of different wavelengths. The second semiconductor element portion has at least one light-emitting region that emits light whose wavelength is different from the lights emitted by the light-emitting regions of the first semiconductor element portion. The light-emitting regions of the first semiconductor element portion and at least one light-emitting region of the second semiconductor element portion are electrically connected to each other.

Abstract: In one embodiment of the present invention, in a method of fabricating a nitride semiconductor laser device, after an insulating film is formed on a layered nitride semiconductor portion on a substrate, a resist mask is formed on the insulating film, such that the insulating film is exposed near a position where an exit-side cleaved facet and a reflection-side cleaved facet are formed. The insulating film near a position where the exit-side cleaved facet and the reflection-side cleaved facet are formed is then removed, and, after the resist mask is removed, cleavage is performed. As a result, even if the substrate and the layered nitride semiconductor portion are cleaved at a position where the exit-side cleaved facet and the reflection-side cleaved facet are formed, the insulating film is not broken. This helps prevent fragments produced from the insulating film from being adhered to the exit-side cleaved facet and to the reflection-side cleaved facet.

Abstract: A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlxGa1-x-yInyN (wherein 0.001?x<0.1, 0<y<1 and x+y<1).

Abstract: A gallium nitride-based light emitting device with a roughened surface is described. The light emitting device comprises a substrate, a buffer layer grown on the substrate, an n-type III-nitride semiconductor layer grown on the buffer layer, a III-nitride semiconductor active layer grown on the n-type III-nitride semiconductor layer, a first p-type III-nitride semiconductor layer grown on the III-nitride semiconductor active layer, a heavily doped p-type III semiconductor layer grown on the first p-type III-nitride semiconductor, and a roughened second p-type III-nitride semiconductor layer grown on the heavily doped p-type III semiconductor layer.

Abstract: A light emitting device includes a transparent substrate having first and second surfaces, a semiconductor layer provided on the first surface, a first light emission layer provided on the semiconductor layer and emitting first ultraviolet light including a wavelength corresponding to an energy larger than a forbidden bandwidth of a semiconductor of the semiconductor layer, a second light emission layer provided between the first light emission layer and the semiconductor layer, absorbing the first ultraviolet light emitted from the first light emission layer, and emitting second ultraviolet light including a wavelength corresponding to an energy smaller than the forbidden bandwidth of the semiconductor of the semiconductor layer, and first and second electrodes provided to apply electric power to the first light emission layer.

Abstract: A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps.

Abstract: The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer therebetween, wherein the light emitting device comprises a gallium-containing nitride semiconductor layer prepared by crystallization from supercritical ammonia-containing solution in the nitride semiconductor layer.

Abstract: A manufacturing method of a nitride substrate includes the steps of preparing a ground substrate; forming a mask on the ground substrate; placing the ground substrate in a reactor, and heating the ground substrate to a temperature of 850° C. to 1100° C. In the step of heating the ground substrate, HCl and NH3 are supplied into the reactor so that partial pressure PHCl satisfies (1.5+0.0005 p) kPa?PHCl?(4+0.0005 p) kPa and partial pressure PNH3 satisfies (15?0.0009 p) kPa?PNH3?(26?0.0017 p) kPa, whereby an AlxGayIn1-x-yN crystal (0?x<1, 0<y?1) is grown, and whereby a ridge-volley structure including a plurality of ridges and valleys parallel to one another is formed. The AlxGayIn1-x-yN crystal is grown so that the ridge-valley structure is not buried while a height of the volleys from the ground substrate is allowed to exceed 2.5 (p?s).

Abstract: This application discloses alight-emitting diode device, comprising an epitaxial structure having a light-emitting layer, a first-type conductivity layer, and a second-type conductivity layer wherein the thicknesses of the first-type conductivity confining layer is not equal to the second-type conductivity confining layer and the light-emitting layer is not overlapped with the portion of the epitaxial structure corresponding to the peak zone of the wave intensity distribution curve along the direction of the epitaxy growth.

Abstract: Provided is a Group III nitride-based compound semiconductor light-emitting device including aluminum regions. The Group III nitride-based compound semiconductor light-emitting device includes a sapphire substrate; aluminum regions which are formed on the substrate; an AlN buffer layer; an Si-doped GaN n-contact layer; an n-cladding layer formed of multiple layer units, each including an undoped In0.1Ga0.9N layer, an undoped GaN layer, and a silicon (Si)-doped GaN layer; an MQW light-emitting layer including alternately stacked eight well layers formed of In0.2Ga0.8N and eight barrier layers formed of GaN and Al0.06Ga0.94N; a p-cladding layer formed of multiple layers including a p-type Al0.3Ga0.7N layer and a p-type In0.08Ga0.92N layer; a p-contact layer having a layered structure including two p-type GaN layers having different magnesium concentrations; and an ITO light-transmitting electrode.

Abstract: Semiconductor wafers, semiconductor devices, and methods of making semiconductor wafers and devices are provided. Embodiments of the present invention are especially suitable for use with substrate substitution applications, such in the case of fabricating vertical LED. One embodiment of the present invention includes a method of making a semiconductor device, the method comprising providing a substrate; forming a plurality of polishing stops on the substrate; growing one or more buffer layers on the substrate; growing one or more epitaxial layers on the one or more buffer layers; and applying one or more metal layers to the one or more epitaxial layers. Additionally, the steps of affixing a second substrate to the one or more metal layers and removing the base substrate using a mechanical thinning process may be performed.

Abstract: A Metal Organic Vapor Phase Epitaxy step of growing a light emitting layer section 24, composed of a first Group III-V compound semiconductor, epitaxially on a single crystal growth substrate 1 by Metal Organic Vapor Phase Epitaxy, and a Hydride Vapor Phase Epitaxial Growth step of growing a current spreading layer 7 on the light emitting layer section 24 epitaxially by Hydride Vapor Phase Epitaxial Growth Method, are conducted in this order. Then, the current spreading layer 7 is grown, having a low-rate growth layer 7a positioned close to the light emitting layer side and then a high-rate growth layer 7b, having a growth rate of the low-rate growth layer 7a lower than that of the high-rate growth layer 7b, so as to provide a method of fabricating a light emitting device capable of preventing hillock occurrence while forming the thick current spreading layer.

Abstract: A semiconductor device includes a substrate comprising a first surface having a first orientation and a second surface having a second orientation and a plurality of III-V compound layers on the substrate, wherein the plurality of III-V compound layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V compound layers.

Abstract: The present invention provides a light-emitting element, a method of manufacturing the light-emitting element, a light-emitting device, and a method of manufacturing the light-emitting device. A method of manufacturing a light-emitting element includes: forming a first conductive layer of a first conductive type, a light-emitting layer, and a second conductive layer of a second conductive type on at least one first substrate, forming an ohmic layer on the second conductive layer and bonding the at least one first substrate to a second substrate. The second substrate being larger than the first substrate. The method further includes etching portions of the ohmic layer, the second conductive layer, and the light-emitting layer to expose a portion of the first conductive layer.

Abstract: Disclosed is a semiconductor device which is improved in output power efficiency since reflection by the substrate is reduced. This semiconductor device is also excellent in strength characteristics of a supporting substrate. Also disclosed is a method for producing such a semiconductor device. Specifically disclosed is a nitride semiconductor device wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially stacked in this order on a substrate. This nitride semiconductor device is characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer.

Abstract: There is provided a nitride semiconductor light emitting device having a vertical type device in which a pair of electrodes is formed on both sides of a chip, by using a semiconductor substrate, and having high luminous efficiency by using MgxZn1-xO (0?x?0.5) as the substrate which is enable to prevent light absorption by the substrate while maintaining high thermal conductivity, and also enable to reduce dislocation density of a nitride semiconductor layer grown on the substrate. A substrate (1) is made of a zinc oxide based compound such as MgxZn1-xO (0?x?0.5), a first nitride semiconductor layer (2) is provided in contact with the substrate (1), a mask layer (4) having opening portions and a second nitride semiconductor layer (5) selectively grown laterally from the opening portions are formed on the first nitride semiconductor layer, and nitride semiconductor layers (6) to (8) are laminated on the second nitride semiconductor layer so as to form a semiconductor element.

Abstract: An optoelectronic semiconductor chip (12) is disclosed comprising a thin-film semiconductor body (8), which comprises a semiconductor layer sequence (2, 20) having an active region (3) suitable for generating radiation, and comprising a carrier layer (7), which is formed on the semiconductor layer sequence and carries the thin-film semiconductor body.

Abstract: A manufacturing method of a semiconductor device comprises the steps of: providing a substrate; forming a plurality of grooves on the substrate by photolithograph etching or laser engraving, wherein the plurality of grooves divides a surface of the substrate into a plurality of mesas and the substrate is a patterned substrate; and growing a semiconductor device (e.g. photo-electronic device or LED) on the patterned substrate. The semiconductor device comprises at least one layer, wherein the layer directly disposed on the patterned substrate is the first layer. The first layer comprises a plurality of separated regions divided by the grooves.

Abstract: A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.

Abstract: A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a plurality of concave portions, a reflector in at least one of the concave portions of the first nitride semiconductor layer, and a second nitride semiconductor layer on the first nitride semiconductor layer.

Abstract: A structure and method for a light-emitting diode are presented. A preferred embodiment comprises a substrate with a conductive, poly-crystalline, silicon-containing layer over the substrate. A first contact layer is epitaxially grown, using the conductive, poly-crystalline, silicon-containing layer as a nucleation layer. An active layer is formed over the first contact layer, and a second contact layer is formed over the active layer.

Abstract: The invention provides a method for growing a nitride single crystal on a silicon wafer and a method for manufacturing a light emitting device using the same. In growing the nitride single crystal according to one aspect of the invention, first, a silicon substrate having a surface in (111) crystal orientation is prepared. A first nitride buffer layer is formed on the surface of the silicon substrate. Then, an amorphous oxide film is disposed on the first nitride buffer layer. A second buffer layer is disposed on the amorphous oxide film. Thereafter, the nitride single crystal is formed on the second nitride buffer layer.

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.

Abstract: A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In2O3 crystal having a bixbyite structure. Also discussed is a method of manufacturing the device.

Abstract: A semiconductor light emitting device includes a substrate 11 including a group III-V nitride semiconductor; a first-conductivity-type layer 12 formed on the substrate 11, the first-conductivity-type layer including a plurality of group III-V nitride semiconductor layers of first conductivity type; an active layer 13 formed on the first semiconductor layer 12; and a second-conductivity-type layer 14 formed on the active layer 13, the second-conductivity-type layer including a group III-V nitride semiconductor layer of second conductivity type. The first-conductivity-type layer 12 includes an intermediate layer 23 made of Ga1-nInxN (0<x<1).

Abstract: Embodiments provide a semiconductor light emitting device which comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a semiconductor layer on the second conductive semiconductor layer, and comprising a plurality of a semiconductor structures apart from each other and microfacets.

Abstract: A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.

Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

Abstract: 4H—InGaAlN alloy based optoelectronic and electronic devices on non-polar face are formed on 4H—AlN or 4H—AlGaN on (11-20) a-face 4H—SiC substrates. Typically, non polar 4H—AlN is grown on 4H—SiC (11-20) by molecular beam epitaxy (MBE). Subsequently, III-V nitride device layers are grown by metal organic chemical vapor deposition (MOCVD) with 4H-polytype for all of the layers. The non-polar device does not contain any built-in electric field due to the spontaneous and piezoelectric polarization. The optoelectronic devices on the non-polar face exhibits higher emission efficiency with shorter emission wavelength because the electrons and holes are not spatially separated in the quantum well. Vertical device configuration for lasers and light emitting diodes (LEDs) using conductive 4H—AlGaN interlayer on conductive 4H—SiC substrates makes the chip size and series resistance smaller. The elimination of such electric field also improves the performance of high speed and high power transistors.

Abstract: This invention discloses a GaN semiconductor device comprising a substrate; a metal-rich nitride compound thin film on the substrate; a buffer layer formed on the metal-rich nitride compound thin film, and a semiconductor stack layer on the buffer layer wherein the metal-dominated nitride compound thin film covers a partial upper surface of the substrate. Because metal-rich nitride compound is amorphous, the epitaxial growth direction of the buffer layer grows upwards in the beginning and then turns laterally, and the epitaxy defects of the buffer layer also bend with the epitaxial growth direction of the buffer layer. Therefore, the probability of the epitaxial defects extending to the semiconductor stack layer is reduced and the reliability of the GaN semiconductor device is improved.

Abstract: A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlxGa1?x?yInyN (wherein 0.001?x<0.1, 0<y<1 and x+y<1).

Abstract: Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.

Abstract: A nitride semiconductor device includes a semiconductor substrate composed of gallium nitride, and a stack which is provided on the semiconductor substrate and includes at least one nitride semiconductor layer containing aluminum, wherein substrate thickness T of the semiconductor substrate and a sum S of products of proportions of aluminum and thicknesses of all of the nitride semiconductor. layer containing aluminum among the stack satisfy a relationship of: T/860<=S<=T/530.

Abstract: A semiconductor element is disclosed having a layered body of a first conductivity type, a light emitting layer, a layered body of a second conductivity type, a constriction layer having a constriction hole, and a first electrode having a lighting hole, a second electrode positioned such that charge traveling between the first and second electrodes passes through the light emitting layer. The constriction hole area is larger than the lighting hole area, and the lighting hole and the constriction hole expose a part of the layered body of the second conductivity type. A mirror is positioned such that the mirror receives light emitted from the light emitting layer that passes through the layered body of the first conductivity type, and the mirror is constructed to have a high reflection ratio for light having peak wavelengths between 200 nm to 350 nm.