Abstract: An LED chip includes a substrate and a p-n junction type semiconductor light-emitting structure. The substrate has a first surface and a second surface opposite to the second surface. The p-n junction type semiconductor light-emitting structure is arranged on the first surface of the substrate. A plurality of blind holes is defined in the second surface of the substrate and extends from the second surface towards the first surface. A heat conductive material is filled in each of the plurality of blind holes thereby forming a plurality of heat conductive poles in the plurality of blind holes.

Abstract: A device for forming a Group III-V semiconductor on a substrate. The device has a primary chamber comprising a substrate and a heat source for heating the substrate to a first temperature. A secondary chamber comprises a metal source and a second heat source for heating the secondary chamber to a second temperature. A first source is provided which is capable of providing HCl to the secondary chamber wherein the HCl and the metal form metal chloride. A metal-organic source is provided. A metal chloride source is provided which comprises a metal chloride. At least one of the metal chloride, the metal-organic and the second metal chloride react with the nitrogen containing compound to form a Group III-V semiconductor on the substrate.

Abstract: An object of the present invention is to provide a group III nitride semiconductor stacked structure having a high-quality A-plane group III nitride semiconductor layer on an R-plane sapphire substrate. The inventive group III nitride semiconductor stacked structure comprises a substrate composed of R-plane sapphire (?-Al2O3), a buffer layer composed of aluminum gallium nitride (AlxGa1-xN: 0?X?1) formed on said substrate and an underlying layer composed of an A-plane group III nitride semiconductor (AlxGayInzN1-aMa: 0?X?1, 0?Y?1, 0?Z?1, and X+Y+Z=1; wherein, M represents a group V element other than nitrogen (N), and 0?a?1) formed on said buffer layer, wherein the pit density of the surface of said underlying layer is 1×1010 cm?2 or less.

Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. A transparent, conductive non-III-nitride material is disposed in direct contact with the n-type region. A total thickness of semiconductor material between the light emitting layer and the transparent, conductive non-III-nitride material is less than one micron.

Abstract: A gallium nitride (GaN) light emitting device and a method of manufacturing the same are provided, the method including sequentially forming a buffer layer and a first nitride layer on a silicon substrate, and forming a plurality of patterns by dry etching the first nitride layer. Each pattern includes a pair of sidewalls facing each other. A reflective layer is deposited on the first nitride layer so that one sidewall of the pair is exposed by the reflective layer. An n-type nitride layer that covers the first nitride layer is formed by horizontally growing an n-type nitride from the exposed sidewall, and a GaN-based light emitting structure layer is formed on the n-type nitride layer.

Abstract: Disclosed is a light emitting device having an isolating insulative layer for isolating light emitting cells from one another and a method of fabricating the same. The light emitting device comprises a substrate and a plurality of light emitting cells formed on the substrate. Each of the light emitting cells includes a lower semiconductor layer, an upper semiconductor layer positioned on one region of the lower semiconductor layer, and an active layer interposed between the lower and upper semiconductor layers. Furthermore, an isolating insulative layer is filled in regions between the plurality of light emitting cells to isolate the light emitting cells from one another. Further, wirings electrically connect the light emitting cells with one another. Each of the wirings connects the lower semiconductor layer of one light emitting cell and the upper semiconductor layer of another light emitting cell adjacent to the one light emitting cell.

Abstract: A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.

Abstract: An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm?2 and at most 1×106 cm?2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.

Abstract: The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.

Abstract: A method for manufacturing light-emitting diode (LED) first provides a substrate, then a protrusive patterned layer is formed on the substrate. The protrusive patterned layer exposes portions of the substrate, and the exposed portions are defined as a plurality of exposed regions. Next, a plurality of island semiconductor multi-layer is individually formed in each exposed region of the substrate.

Abstract: A nitride semiconductor light emitting device is provided with a substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an n-side pad electrode, a translucent electrode and a p-side pad electrode, wherein the translucent electrode is formed from an electrically conductive oxide, the n-side pad electrode adjoins the periphery of the translucent electrode and the p-side pad electrode is disposed so as to satisfy the following relationships: 0.3L?X?0.5L and 0.2L?Y?0.5L where X is the distance between ends of the p-side pad electrode and the n-side pad electrode, Y is the distance between the end of the p-side pad electrode and the periphery of the translucent electrode, L is the length of the translucent electrode on the line connecting the centroids of the p-side pad electrode and the n-side pad electrode minus the outer diameter d of the p-side pad electrode.

Abstract: The invention concerns a method for preparing a NIII-V semiconductor. According to the invention, the method includes at least one step of doping a semiconductor of general formula AlxGa1-xN, wherein the atomic number x represents the number between 0 and 1 with a p-type electron-accepting dopant, as well as a co-doping step with a codopant capable of modifying the structure of the valency band. The invention also concerns a semiconductor as well as its use in electronics or optoelectronics. The invention further concerns a device as well as a diode using such a semiconductor.

Abstract: There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.

Abstract: A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.

Abstract: A nanopyramid LED and method for forming. The nanopyramid LED includes a silicon substrate, a III-nitride layer deposited thereon, a metal layer deposited thereon; and a nanopyramid LED grown in ohmic contact with the metal layer. The nanopyramid LED can be seeded on the III-nitride layer or metal layer. The metal layer can be a reflecting surface for the nanopyramid LED. The method for forming nanopyramid LEDs includes obtaining a silicon substrate, depositing a III-nitride layer thereon, depositing a metal layer thereon, depositing a dielectric growth layer thereon, etching a dielectric growth template in the growth layer, and growing III-nitride nanopyramid LEDs through the dielectric growth template in ohmic contact with the metal layer. The etching can be performed by focused ion beam etching. The etching can stop in the metal layer or III-nitride layer, so that the nanopyramid LEDs can seed off the metal layer or III-nitride layer, respectively.

Abstract: A group III nitride semiconductor optical device includes: a substrate comprising a group III nitride semiconductor; a first group-III nitride semiconductor region on a primary surface of the substrate; a second group-III nitride semiconductor region on the primary surface of the substrate; and an active layer between the first group-III nitride semiconductor region and the second group-III nitride semiconductor region. The primary surface of the substrate tilts at a tilt angle in the range of 63 degrees to smaller than 80 degrees toward the m-axis of the group III nitride semiconductor from a plane perpendicular to a reference axis extending along the c-axis of the group III nitride semiconductor. The first group-III nitride semiconductor region, the active layer, and the second group-III nitride semiconductor region are arranged in the direction of the normal axis to the primary surface of the substrate. The active layer is configured to produce light having a wavelength in the range of 580 nm to 800 nm.

Abstract: A method of making a vertically structured light emitting diode includes: providing a sacrificial substrate having first and second portions; forming a first buffer layer on a surface of the sacrificial substrate; forming a second buffer layer on a surface of the first buffer layer; forming a light emitting unit on a surface of the second buffer layer; forming a device substrate on a surface of the light emitting unit; etching the first portion of the sacrificial substrate such that the second portion of the sacrificial substrate remains on the first buffer layer; dry-etching the second portion of the sacrificial substrate; dry-etching the first buffer layer; and etching the second buffer layer. An etch rate of a material of the second buffer layer is lower than an etch rate of a material of the first buffer layer.

Abstract: A light emitting device and a light emitting device package including the same are provided. The light emitting device may include a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode on the light emitting structure, the first electrode including a pattern, and a pad electrode on the first electrode.

Abstract: The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.

Abstract: A semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further comprises a curvature control layer grown on a first layer. The curvature control layer is disposed between the n-type region and the first layer. The curvature control layer has a theoretical a-lattice constant less than the theoretical a-lattice constant of GaN. The first layer is a substantially single crystal layer.

Abstract: An exemplary nitride-based semiconductor light emitting device includes a substrate, a nitride-based multi-layered structure epitaxially formed on the substrate, a first-type electrode and a second-type electrode formed on the nitride-based multi-layered structure and connected with the first-type layer and the second-type layer, respectively. The multi-layered structure includes a first-type layer, an active layer and a second-type layer arranged along a direction away from the substrate in the order written. The second-type layer defines a number of grooves at the top surface. Each groove has a side surface and a bottom surface adjoining the side surface. The side surface and the bottom surface cooperatively form an included angle which is in a range from 140 degree to 160 degree.

Abstract: Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer.

Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Abstract: A new structure of a semiconductor optical device and a method to produce the device are disclosed. One embodiment of the optical device of the invention provides a blocking region including, from the side close to the mesa, a p-type first layer and a p-type second layer. The first layer is co-doped with an n-type impurity and a p-type impurity. The doping concentration of the p-type impurity in the first layer is smaller than that in the second layer, so, the first layer performs a function of a buffer layer for the Zn diffusion from the second layer to the active layer in the mesa structure.

Abstract: In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle ? from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle ? is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP? with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP? and the gallium nitride based semiconductor layer P.

Abstract: The present invention relates to III-nitride semiconductor light emitting device and a method for fabricating the same. The III-nitride semiconductor light emitting device includes: a substrate; a plurality of III-nitride semiconductor layers grown over the substrate and including an active layer for generating light by recombination of electrons and holes; and a protrusion formed on a surface of the substrate over which the semiconductor layers are to be grown, a section of the protrusion which is in parallel to the growth direction of the semiconductor layers being formed in a triangular shape.

Abstract: A compound semiconductor light-emitting diode includes a light-emitting layer (133) formed of aluminum-gallium-indium phosphide, a light-emitting part (13) having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer (14) bonded to one of the outermost surface layers (135) of the light-emitting part (13) and transparent to the light emitted from the light-emitting layer (133), and a bonding layer (141) formed between the supporting layer (14) and the one of the outermost surface layers (135) of the light-emitting part (13) containing oxygen atoms at a concentration of 1×1020 cm?3 or less.

Abstract: A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

Abstract: A nitride semiconductor device according to the present invention includes a n-GaN substrate 10 and a semiconductor multilayer structure arranged on the principal surface of the n-GaN substrate 10 and including a p-type region, an n-type region and an active layer between them. An SiO2 layer 30 with an opening and a p-side electrode, which makes contact with a portion of the p-type region of the semiconductor multilayer structure, are arranged on the upper surface of the semiconductor multilayer structure. An n-side electrode 36 is arranged on the back surface of the substrate 10. The p-side electrode includes a p-side contact electrode 32 that contacts with the portion of the p-type region and a p-side interconnect electrode 34 that covers the p-side contact electrode 2 and the SiO2 layer 30. Part of the p-side contact electrode 32 is exposed under the p-side interconnect electrode 34.

Abstract: A solid-state light source includes at least one stack of light emitting elements. The elements are an inorganic light emitting diode chip and at least one wavelength conversion chip or the elements are a plurality of light emitting diode chips and one or more optional wavelength conversion chips. The wavelength conversion chip may include an electrical interconnection means. The light emitting diode chip may include at least one GaN-based semiconductor layer that is at least ten microns thick and that is fabricated by hydride vapor phase epitaxy. A method is described for fabricating the solid-state light source.

Abstract: A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first semiconductor layer emitting electrons, a second semiconductor layer emitting holes, and an active layer emitting light by combination of the electrons and holes. At least one of the layers comprises an photo enhanced minority carriers.

Abstract: A low resistance light emitting device with an ultraviolet light-emitting structure having a first layer with a first conductivity, a second layer with a second conductivity; and a light emitting quantum well region between the first layer and second layer. A first electrical contact is in electrical connection with the first layer and a second electrical contact is in electrical connection with the second layer. A template serves as a platform for the light-emitting structure. The ultraviolet light-emitting structure has a first layer having a first portion and a second portion of AlXInYGa(1-X-Y)N with an amount of elemental indium, the first portion surface being treated with silicon and indium containing precursor sources, and a second layer. When an electrical potential is applied to the first layer and the second layer the device emits ultraviolet light.

Abstract: A structure for improving the mirror facet cleaving yield of (Ga,Al,In,B)N laser diodes grown on nonpolar or semipolar (Ga,Al,In,B)N substrates. The structure comprises a nonpolar or semipolar (Ga,Al,In,B)N laser diode including a waveguide core that provides sufficient optical confinement for the device's operation in the absence of p-type doped aluminum-containing waveguide cladding layers, and one of more n-type doped aluminum-containing layers that can be used to assist with facet cleaving along a particular crystallographic plane.

Abstract: A Metal Organic Vapor Phase Epitaxy step of growing a light emitting layer section 24, composed of a first Group III-V compound semiconductor, epitaxially on a single crystal growth substrate 1 by Metal Organic Vapor Phase Epitaxy, and a Hydride Vapor Phase Epitaxial Growth step of growing a current spreading layer 7 on the light emitting layer section 24 epitaxially by Hydride Vapor Phase Epitaxial Growth Method, are conducted in this order. Then, the current spreading layer 7 is grown, having a low-rate growth layer 7a positioned close to the light emitting layer side and then a high-rate growth layer 7b, having a growth rate of the low-rate growth layer 7a lower than that of the high-rate growth layer 7b, so as to provide a method of fabricating a light emitting device capable of preventing hillock occurrence while forming the thick current spreading layer.

Abstract: A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.

Abstract: A substrate for light-emitting diodes, obtained by stacking a single crystal layer to form a light-emitting diode element onto a ceramic composite layer for light conversion, the ceramic composite layer having been formed by a unidirectional solidification method so that the ceramic composite layer comprises a solidified body having formed therein at least two or more oxide phases selected from single metal oxides and complex metal oxides to be continuously and three-dimensionally entangled with each other, with each oxide phase having a single crystal orientation, wherein at least one oxide phase out of the oxide phases in the solidified body contains a metal element oxide capable of emitting fluorescence.

Abstract: A group III nitride semiconductor light-emitting device includes: a conductive support; a p-electrode positioned on the support, a p-type layer containing a group III nitride semiconductor, an active layer and an n-type layer having a first surface, which are positioned in turn on the p-electrode; and an n-electrode positioned on the first surface of the n-type layer. A groove is formed in the first surface of the n-type layer in a pattern such that the first surface of the n-type layer is continuous. A light-transmitting insulating film is formed on side surface and bottom surface of the groove. The groove has a depth at least reaching the p-type layer. The n-electrode is formed in wiring form.

Abstract: There are provided a group III nitride semiconductor light emitting device which is constituted of a substrate, an intermediate layer formed thereon having a favorable level of orientation properties, and a group III nitride semiconductor formed thereon having a favorable level of crystallinity, and having excellent levels of light emitting properties and productivity; a production method thereof; and a lamp, the group III nitride semiconductor light emitting device configured so that at least an intermediate layer 12 composed of a group III nitride compound is laminated on a substrate 11, and an n-type semiconductor layer 14 having a base layer 14a, a light emitting layer 15 and a p-type semiconductor layer 16 are sequentially laminated on the intermediate layer 12, wherein when components are separated, based on a peak separation technique using an X-ray rocking curve of the intermediate layer 12, into a broad component having the full width at half maximum of 720 arcsec or more and a narrow component,

Abstract: Embodiments of the invention include a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. A contact disposed on the p-type region includes a transparent conductive material in direct contact with the p-type region, a reflective metal layer, and a transparent insulating material disposed between the transparent conductive layer and the reflective metal layer. In a plurality of openings in the transparent insulating material, the transparent conductive material is in direct contact with the reflective metal layer.

Abstract: A semiconductor light emitting device includes a substrate, and a light emitting portion that is disposed on the substrate, and includes an active layer formed of a group III nitride semiconductor using a nonpolar plane or a semipolar plane as a growth principal surface, in which side end surfaces of the active layer are specular surfaces.

Abstract: A semiconductor light emitting device comprises a first electrode contacting layer, a first active layer on the first electrode contacting layer, a second electrode contacting layer on the first active layer, a second active layer on the second electrode contacting layer, and a third electrode contacting layer on the second active layer.

Abstract: A nitride semiconductor light emitting device comprises a first nitride semiconductor layer, an active layer of a single or multiple quantum well structure formed on the first nitride semiconductor layer and including an InGaN well layer and a multilayer barrier layer, and a second nitride semiconductor layer formed on the active layer. A fabrication method of a nitride semiconductor light emitting device comprises: forming a buffer layer on a substrate, forming a GaN layer on the buffer layer, forming a first electrode layer on the GaN layer, forming an InxGa1?xN layer on the first electrode layer, forming on the first InxGa1?xN layer an active layer including an InGaN well layer and a multilayer barrier layer for emitting light, forming a p-GaN layer on the active layer, and forming a second electrode layer on the p-GaN layer.

Abstract: A method for producing a semiconductor light emitting device is disclosed. The method comprises the step of growing a nitride type III-V group compound semiconductor layer that forms a light emitting device structure on a principal plane of a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce a semiconductor light emitting device, the second average dislocation density being greater than the first average dislocation density. The nitride type III-V group compound semiconductor layer does not directly contact the second regions on the principal plane of the nitride type III-V group compound semiconductor substrate.

Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Abstract: A light-emitting device is disclosed, including a light-emitting element and a surface plasmon coupling element, having an intermediary layer connected to the light-emitting element and a metal structure on the intermediary layer, wherein the intermediary layer is conductive under low-frequency injection current and has the characteristics as dielectric material in a wavelength range 100 nm˜20000 nm.

Abstract: A semiconductor light-emitting device includes a semiconductor multilayer (25) including a cavity structure having two facets facing each other, and a first protective film (23a) formed on at least one of the two facets and of metal nitride. The metal nitride contains aluminum and nitrogen as main components, and at least one of yttrium and lanthanum.

Abstract: A method of forming a diffraction grating according to the present invention includes a step of preparing a mold having projections and recesses for forming a diffraction grating, a step of bringing the projections and recesses of the mold into contact with a resin layer in a chamber at a first pressure less than atmospheric pressure, a step of setting a pressure in the chamber to a second pressure more than the first pressure while maintaining the contact, and a step of hardening the resin layer while maintaining the contact between the resin layer and the projections and recesses so as to form a pattern for the diffraction grating on the hardened resin layer. The recesses in the projections and recesses of the mold form a closed pattern in the plane of the mold including the projections and recesses.

Abstract: Disclosed is a compound semiconductor light emitting diode 101 including: a device structure portion 10 formed on a transparent base portion 25, the device structure portion 10 including a compound semiconductor layer having a first conductivity type, a light emitting layer 13 made of mixed crystals of aluminum phosphide gallium indium (having a composition of (AlXGa1-X)0.5In0.5P; 0?X<1), and a compound semiconductor layer having a conductivity type opposite to the first conductivity type; and a first ohmic electrode 1 formed on the device structure portion 10, wherein the second ohmic electrode 5 is formed on the opposite side to the transparent base portion 25, the metal coating film 6 is formed to cover the second ohmic electrode 5, and a metallic pedestal portion 7 covering the metal coating film 6 is formed to electrically connect to the second ohmic electrode 5.

Abstract: A light-emitting diode with (a) a substrate having at least one recessed portion on one main surface; (b) a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and (c) a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer, wherein, a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface.