Abstract: In a light emitting device, one hundred or more bar-like structured light emitting elements (210) each having a light emitting area of 2,500? ?m2 or less are placed on a mounting surface of one insulating substrate (200), so that the light emitting device fulfills little variation in luminance, long life, and high efficiency by dispersion of light emission with suppression of increase in temperatures in light emitting operations.

Abstract: An LED device with improved LED efficiency is presented. An LED die is positioned within a pocket formed by a substrate and an opening in a supporting layer arranged thereon. The increase in the LED efficiency is achieved by providing a device where at least a portion of the pocket surface is reflective. This portion of the pocket surface is reflective because it is covered by either a reflective layer of foil or film, or a reflective coating, or it is polished.

Abstract: According to one embodiment, in a semiconductor light emitting device, a substrate includes a first surface and a second surface opposite to each other, lateral surfaces intersected with the first surface and the second surface, first regions each provided on the lateral surface, and second regions each provided on the lateral surface. Each of the first regions has a first width and a first roughness. Each of the second regions has a second width smaller than the first width and a second roughness smaller than the first roughness. The first region is provided from a position away from the first surface by a first distance. The first regions and the second regions are alternately arranged. A semiconductor laminated body is provided above the first surface of the substrate, and includes a first semiconductor layer, an active layer and a second semiconductor layer.

Abstract: Semiconductor material is formed on a host substrate of a material exhibiting optical transparency with an intervening radiation lift off layer. A transfer device, intermediate substrate or target substrate is brought into adhesive contact with the semiconductor material and the radiation lift off layer is irradiated to weaken it, allowing the semiconductor material to be transferred off the host substrate. Electronic devices may be formed in the semiconductor layer while it is attached to the host substrate or the intermediate substrate.

Abstract: An organic light emitting device and a method for manufacturing that same are discussed, which can reduce thickness and weight of the device as well as the manufacturing cost. The organic light emitting device includes according to an embodiment an organic light emitting diode (OLED) formed on a glass substrate; an adhesive layer formed to cover the OLED; and a metal foil formed on the adhesive layer to seal the OLED and bonded to the glass substrate, wherein the metal foil is formed of an alloy having the same or substantially the same thermal expansion coefficient as that of the glass substrate.

Abstract: An electromagnetic radiation generating semiconductor chip is disclosed. A semiconductor layer sequence suitable for generating electromagnetic radiation is grown on a first main face of a radioparent, electrically conductive growth substrate, for example, a SiC growth substrate. Provided on a second main face of said growth substrate that faces away from said semiconductor layer sequence is a roughening that acts as a diffuser for an electromagnetic radiation emitted into said growth substrate by said semiconductor layer sequence and that in particular has a scattering factor higher than 0.25. A layer or layer sequence reflective of the electromagnetic radiation is applied to said roughening. A method for making the semiconductor chip is also disclosed.

Abstract: A light emitting diode (LED) substrate includes a sapphire substrate which is characterized by having a surface consisting of irregular hexagonal pyramid structures, wherein a pitch of the irregular hexagonal pyramid structure is less than 10 ?m. A symmetrical cross-sectional plane of each of the irregular hexagonal pyramid structures has a first base angle and a second base angle, wherein the second base angle is larger than the first base angle, and the second base angle is 50° to 70°. This LED substrate has high light-emitting efficiency.

Abstract: A modular LED array light source comprises an assembly of a plurality of solid-state LED array modules. Modules are abutted to provide a large area, high intensity, and high-density array that provides substantially uniform irradiance. Preferably, in each module, a linear or rectangular array of groups of LED is provided in which the density of LED die in the array is higher at ends or edges of the modules abutting other modules, to provide improved uniformity of irradiance over the illuminated area between modules. Particular arrangements of clusters of LEDs are provided that reduce or overcome the discontinuity or dip in irradiance due to edge or wall effects caused by the spacing of LED die from edges of the substrate/packaging of each module. These arrangements are advantageous for hermetically sealed LED array modules, for example, which require a minimum wall thickness for an effective seal.

Abstract: The present invention is to provide an organic light emitting display and a method of manufacturing the same. The light emitting display according to the present invention includes: a first substrate on which a plurality of light emitting devices having first electrodes, organic light emitting layers, and second electrodes are disposed; a second substrate disposed to face the first substrate; a dam member disposed between the first substrate and the second substrate to surround the plurality of light emitting devices; an inorganic sealing material disposed between the first substrate and the second substrate in an outer area of the dam member and attaching the first substrate to the second substrate; and a silicon filling material provided between the first substrate and the second substrate inward of the dam member to be in contact with the second electrodes.

Abstract: It is an object to provide a highly reliable display device. It is a feature an IC is over a substrate and a material layer having the same height is thereover. An IC is provided on one side of the substrate, and a material layer having the same height as the IC is provided on at least another side. Further, an IC is provided on one side of the substrate, and material layers having the same height as the IC are provided on the other sides. Further, an IC is provided on one side of the substrate, and a material layer having the same height as the IC is provided at a corner of the substrate.

Abstract: A method includes providing an LED element including a substrate and a gallium nitride (GaN) layer disposed on the substrate. The GaN layer is treated. The treatment includes performing an ion implantation process on the GaN layer. The ion implantation process may provide a roughened surface region of the GaN layer. In an embodiment, the ion implantation process is performed at a temperature of less than approximately 25 degrees Celsius. In a further embodiment, the substrate is at a temperature less than approximately zero degrees Celsius during the ion implantation process.

Abstract: By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT.

Abstract: An LED package includes a substrate, a first LED module and a second LED module. The first LED module includes a plurality of first LEDs arranged at the substrate. The second LED module includes a plurality of second LEDs arranged at the substrate and surrounding the first LED module. A luminous intensity of the first LED module is less than a luminous intensity of the second LED module.

Abstract: A mounting substrate configured to mount a functional element thereon is provided. The mounting substrate includes an insulating base having a flat surface portion and a bank portion protruding from the flat surface portion and dividing the flat surface portion into a plurality of regions; and a conductor layer configured to electrically connect the functional element thereto. The conductor layer is adhered from the flat surface portion to a side surface of the bank portion on the base, and the regions divided by the bank portion are filled with the conductor layer.

Abstract: In producing a semiconductor light-emitting chip whose substrate is composed of a sapphire single crystal, cracking in semiconductor light-emitting elements in the obtained semiconductor light-emitting chip is suppressed.

Abstract: In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

Abstract: Disclosed are a light emitting apparatus and a display apparatus having the same. The light emitting apparatus comprises a first light emitting device which emits a light of a target color tinged with a first color, and a second light emitting device which emits a light of the target color tinged with a second color complementary to the first color with respect to the target color.

Abstract: A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.

Abstract: Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.

Abstract: An inspection method which simplifies an inspection step by eliminating the need to set probes on wiring or probe terminals, and an inspection device for performing the inspection step. A voltage is applied to each of inspected circuits or circuit elements to operate the same. Signal processing is performed on an output from each inspected circuit or circuit element during operation to form a signal (operation information signal) including information on the operating condition of the circuit or the circuit element. The operation information signal is amplified and the amplitude of an alternating current voltage separately input is modulated with the amplified operation information signal. The voltage of the modulated alternating current is read in a non-contact manner to determine whether the corresponding circuit or circuit element is non-defective or defective.

Abstract: A split ring-resonator includes a substrate, an inner-trench or cavity formed into the substrate, the inner trench or cavity including a split, and an outer trench or cavity formed into the substrate around the inner trench or cavity, the outer trench or cavity including another split disposed at an opposite end of the split in the inner trench or cavity, wherein the inner trench or cavity and the outer trench or cavity are configured to receive an electrically conductive gas and/or plasma to form a split-ring resonator,

Abstract: An organic light emitting device comprises an outcoupling layer having relatively high aspect ratio nanowires imbedded within an optically thick transparent high optical index film. The incorporation of nanowires increases the optical index of a light emitting assembly and provides a means for extracting light from a light emitting assembly of the organic light emitting device.

Abstract: An optical semiconductor element and a manufacturing method thereof that can improve the light extraction efficiency with maintaining the yield. The manufacturing method includes forming a plurality of recesses arranged at equal intervals along a crystal axis of a semiconductor film in a surface of the semiconductor film; and performing an etching process on the surface of the semiconductor film, thereby forming a plurality of protrusions arranged according to the arrangement form of the plurality of recesses and deriving from the crystal structure of the semiconductor film in the surface of the semiconductor film.

Abstract: An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer. The first n-type GaN layer, the connecting layer, and the second n-type GaN layer are formed on the substrate in sequence. The connecting layer is etchable by alkaline solution, and a bottom surface of the second n-type GaN layer facing towards the connecting layer has a roughed exposed portion. The GaN on the bottom surface of the second n-type GaN layer is N-face GaN. A top surface of the second n-type GaN layer facing away from the connecting layer includes a first area and a second area. The light emitting layer and the p-type GaN layer are formed on the first area of the top surface of the second n-type GaN layer in sequence.

Abstract: Disclosed is a display device including: a gate electrode; a semiconductor layer formed into an island shape on an upper side of the gate electrode; a side wall oxide film formed on a lateral surface of the semiconductor layer; and a drain electrode and a source electrode formed on an upper side of the semiconductor layer extending from a lateral side of the semiconductor layer, wherein the side wall oxide film has a thickness of 2.1 nm or more.

Abstract: The present invention relates to a bar on which a plurality of LEDs are mounted. The bar has a first side surface having a plurality of grooves and a second side surface having a plurality of grooves, wherein the plurality of first grooves formed at the first side surface and the plurality of second grooves formed at the second side surface intersect each other such that the bar can be easily bent in a widthwise direction.

Abstract: A circuit comprising an array of light emitting diodes (LEDs), and a layer of VSD material positioned to contact an input and an output of each LED in the array of LEDs, so as to protect each LED from both a forward surge and a reverse surge of voltage on the array of LEDs. The layer of VSD material is able to switch into a carrying current state in response to either of the forward or reverse surge exceeding a characteristic voltage level (VCL) of the VSD material.

Abstract: A broad stripe laser (1) comprising an epitaxial layer stack (2), which contains an active, radiation-generating layer (21) and has a top side (22) and an underside (23). The layer stack (2) has trenches (3) in which at least one layer of the layer stack (2) is at least partly removed and which lead from the top side (22) in the direction of the underside (23). The layer stack (2) has on the top side ridges (4) each adjoining the trenches (3), such that the layer stack (2) is embodied in striped fashion on the top side. The ridges (4) and the trenches (3) respectively have a width (d1, d2) of at most 20 ?m.

Abstract: A method for making a polarization rotator includes the steps of forming a structure including a semiconductor substrate and a mesa part, forming a first semiconductor layer on a main surface of the semiconductor substrate and around the mesa part, forming a second semiconductor layer on the first semiconductor layer, forming a semiconductor laminate by forming a third semiconductor layer on the second semiconductor layer, forming a mask layer on the third semiconductor layer, forming a mesa including a first semiconductor core by etching the semiconductor laminate, and forming a first semiconductor cladding by forming a fourth semiconductor layer around the mesa. The first semiconductor core and the first semiconductor cladding form a polarization rotating unit. An inclined surface of a mesa-part-adjacent portion extends in a second direction forming an acute angle with the main surface. An inclined portion of the second semiconductor layer extends in the second direction.

Abstract: A substrate-free semiconducting sheet has an array of semiconducting elements dispersed in a matrix material. The matrix material is bonded to the edge surfaces of the semiconducting elements and the substrate-free semiconducting sheet is substantially the same thickness as the semiconducting elements.

Abstract: A light-emitting element disclosed includes a first electrode layer; a second electrode layer which transmits light; and a light-emitting layer interposed between the first electrode layer and the second electrode layer. The first electrode layer includes a first conductive layer which is able to reflect light, a second conductive layer provided over the first conductive layer and including titanium, and a third conductive layer which transmits light and contains a metal oxide having work function higher than that of a material of the first conductive layer.

Abstract: A first light emitting element 310 and a second light emitting element 320 are serially laminated over a substrate 300. The first light emitting element 310 has a light emitting layer 312 between a first anode 311 and a first cathode 313, and the second light emitting element 320 has a light emitting layer 322 between a second anode 321 and a second cathode 323. Here, the light emitting layer 312 shows a first emission spectrum 330 having peaks both in a blue to blue green wavelength range and in a yellow to orange wavelength range, and the light emitting layer 322 shows a second emission spectrum 340 having peaks both in a blue green to green wavelength range and in an orange to red wavelength range.

Abstract: An etchant for forming double-layered signal lines and electrodes of a liquid crystal display device includes hydrogen peroxide (H2O2), a phosphate, F-ions, an organic acid having a carboxyl group (—COOH), a copper (Cu) inhibitor, and a hydrogen peroxide (H2O2) stabilizer, wherein each of the double-layered signal lines and electrodes of the liquid crystal display device includes a first layer of one of aluminum (Al), aluminum alloy (Al-alloy), titanium (Ti), titanium alloy (Ti-alloy), tantalum (Ta), and a tantalum alloy (Ta-alloy) and a second layer of copper (Cu).

Abstract: Disclosed is a light emitting device including a support substrate, a transistor unit disposed at one side of the upper surface of the support substrate, a light emitting device unit disposed at the other side of the upper surface of the support substrate, and an insulating layer disposed between the transistor unit and the light emitting device unit and between the support substrate and the transistor unit and isolating the transistor unit from the light emitting device unit.

Abstract: Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series.

Abstract: A method for controlling color accuracy of a light-emitting semiconductor-based device, and a process for producing a light-emitting semiconductor-based device with desired color accuracy is disclosed. The color accuracy is controlled by defining a desired color accuracy of a light produced by mixing colors emitted by at least two light sources over a first range of operating conditions; determining characteristics of the light as a function of operating conditions; and establishing desired light characteristics of the at least two light sources over a second range of operating condition in accordance with the step of defining and the step of determining.

Abstract: An illuminating device (4) includes a light emitting diode substrate (8). A connector (20) is provided at a predetermined position on one end in the longitudinal direction of the light emitting diode substrate (8). Two light emitting diode substrates (8) are adjacent in an arrangement direction, and a plurality of light emitting diodes (18r), (18g), and (18b) included in light emitting diode units (19a) to (19h) in each of the two light emitting diode substrates (8) are provided so as to be symmetrical with respect to a point that is in the center of these two light emitting diode substrates (8).

Abstract: Embodiments of displays with embedded MEMS sensors and related methods are described herein. Other embodiments and related methods are also disclosed herein.

Abstract: A light emitting module includes a light emitting package and a lead frame. The light emitting package includes a light emitting chip emitting light, a first lead electrically connected to the light emitting chip, and a second lead spaced apart from the first lead and electrically connected to the light emitting chip. The light emitting package is mounted on the lead frame. The lead frame includes a third lead electrically connected to the first lead, a fourth lead electrically connected to the second lead and a molding part including the third lead and the fourth lead therein.

Abstract: Provided is a package of a light emitting diode. The package according to an embodiment includes a base layer, a light emitting diode chip on the base layer, a lead frame electrically connected to the light emitting diode chip, a reflective coating layer directly on the lead frame, and a molding material covering the light emitting diode chip in a predetermined shape.

Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.

Abstract: A light emitting device comprises a novel low-loss array of conductive vias embedded in a dielectric multilayer stack, to act as an electrically-conductive, low-loss, high-reflectivity reflector layer (CVMR). In one example the CVMR stack is employed between a reflective metal bottom contact and a p-GaN semiconductor flip chip layer. The CVMR stack comprises at least (3) layers with at least (2) differing dielectric constants. The conductive vias are arranged such that localized and propagating surface plasmons associated with the structure reside within the electromagnetic stopband of the CVMR stack, which in turn inhibits trapped LED modes coupling into these plasmonic modes, thereby increasing the overall reflectivity of the CVM R. This technique improves optical light extraction and provides a vertical conduction path for optimal current spreading in a semiconductor light emitting device. A light emitting module and method of manufacture are also described.

Abstract: A method of making quasi-vertical light emitting devices includes growing semiconductor layers on a growth substrate and etching the semiconductor layers to produce device isolation trenches forming separable semiconductor devices and holes. Blind holes are drilled in the substrate at the location of each of the holes in the semiconductor layers. The drilling of the blind holes defines blind hole walls and a blind hole end in each of the blind holes. N-semiconductor metal is deposited in each of the blind holes. An n-electrode contact is formed in each of the blind holes by plating each of the blind holes with an n-electrode metal connected to the n-semiconductor metal. The substrate is thinned to expose the n-electrode metal as an n-electrode. Bonding metal is deposited to the n-electrode for packaging.

Abstract: A gate drive circuit includes plural stages connected together one after each other. Each of the plural stages includes a circuit transistor, a capacitor part, a first connection part and a second connection part. The circuit transistor outputs the gate signal through a source electrode in response to a control signal applied through a gate electrode. The capacitor part includes a first electrode, a second electrode formed on the first electrode, and a third electrode formed on the second electrode. The first connection part electrically connects the gate electrode of the circuit transistor and the second electrode of the capacitor part. The second connection part electrically connects the source electrode of the circuit transistor and the first electrode of the capacitor part. Thus, an integrated size of a gate drive circuit may be decreased, and a reliability of a gate drive circuit may be enhanced.

Abstract: Light emitting diode (LED) devices, systems, and methods are disclosed. In one aspect, an illumination panel can be configured to provide backlighting for a liquid crystal display (LCD) panel. The illumination panel can include one or more LEDs arranged in an array. The one or more LEDs can be attached using metal-to-metal die attach methods over an illumination panel, or attached within packages disposed over the illumination panel. In one aspect, the one or more LEDs can be attached using robust metal-to-metal die attach techniques and/or materials disclosed herein.

Abstract: This invention relates to relates to silicon light emitting devices (SiLEDs), and its application into current Complementary Metal Oxide Semiconductor (CMOS) technology, as well into future Silicon on Insulator (SOI) technology. According to the invention, a silicon based light emitting device is designed to operate by means of avalanche carrier multiplication and emitting at the below threshold wavelength detection range for Silicon of 850 nm and such that it is compatible with CMOS silicon nitride, silicon oxi-nitride and polymer waveguide technology. This favours diverse electro-optical system applications such as electro-optical couplers, fast data transfer on and from chip, various optical interconnect configurations as well as diverse on-chip sensor, fluidic and micro-optical-mechanical sensor applications. Under particular operating conditions emissions at specific wavelengths (for example the longer wavelengths) may be favoured, while in other cases tuning of the emitted radiation may be obtained.

Abstract: The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer includes, as a main component, at least one oxide of a metal selected from a group of metals consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.

Abstract: Provided is a ceramic package for headlamp, and a headlamp module having the same. The ceramic package for headlamp includes a body part, a pair of internal electrodes, and an electrode exposing part. The body part has a cavity formed therein. The cavity is upwardly opened to expose a light emitting diode mounted on a mounting part. The pair of internal electrodes in the body part is electrically connected to the light emitting diode. The electrode exposing part is stepped at either side of the body part to upwardly expose the internal electrode to the outside.

Abstract: A light emitting diode (LED) apparatus with temperature control and current regulation functions is provided. The LED apparatus includes at least one LED die and at least one temperature control and current regulation (TCCR) device. The TCCR device is electrically connected between the LED die and a power source, and is placed within an effective temperature sensing distance of the LED die, so as to sense temperature changes of the LED die. The resistance of the TCCR device is proportional to the temperature in a range of 25° C. to 85° C., i.e., the resistance increases with temperature. Moreover, the resistance difference of the TCCR device between 50° C. and 80° C. is greater than or equal to 100 m?.

Abstract: Present embodiments provide a display apparatus including a substrate; a sealing substrate facing the substrate; a display unit between the substrate and the sealing substrate; a first sealing member between the substrate and the sealing substrate to be spaced apart from the display unit, so as to bond the substrate and the sealing substrate to each other; a second sealing member between the substrate and the sealing substrate to be spaced apart from the display unit and the first sealing member, so as to bond the substrate and the sealing substrate to each other; and a light pattern layer on a surface of the sealing substrate opposite to a surface facing the display unit, so as to adjust light intensity transmitted through the sealing substrate. The light pattern layer includes a first pattern corresponding to the first sealing member and a second pattern corresponding to the second sealing member.