Abstract: An OLED display device includes a plurality of pixels including sub-pixels arranged along a first direction, the sub-pixels being arranged in an order emitting red, green, and blue lights along the first direction or in a reverse order, wherein an arrangement of colors of light emitted from sub-pixels of one pixel is symmetrical to an arrangement of colors of light emitted from sub-pixels of an adjacent pixel, and wherein a light emitting layer of the sub-pixel emitting red light includes a light emitting layer emitting red light and a light emitting layer emitting green light, a light emitting layer of the sub-pixel emitting green light includes a light emitting layer emitting green light, and a light emitting layer of the sub-pixel emitting blue light includes a light emitting layer emitting blue light and a light emitting layer emitting green light.

Abstract: An OLED display device includes a plurality of pixels including sub-pixels arranged along a first direction, the sub-pixels being arranged in an order emitting red, blue, and green lights along the first direction or in a reverse order, wherein an arrangement of colors of light emitted from sub-pixels of one pixel is symmetrical to an arrangement of colors of light emitted from sub-pixels of an adjacent pixel, and wherein a light emitting layer of the sub-pixel emitting red light includes a light emitting layer emitting red light and a light emitting layer emitting blue light, a light emitting layer of the sub-pixel emitting blue light includes a light emitting layer emitting blue light, and a light emitting layer of the sub-pixel emitting green light includes a light emitting layer emitting green light and a light emitting layer emitting blue light.

Abstract: In a GaN based semiconductor optical device 11a, the primary surface 13a of the substrate 13 tilts at a tilting angle toward an m-axis direction of the first GaN based semiconductor with respect to a reference axis “Cx” extending in a direction of a c-axis of the first GaN based semiconductor, and the tilting angle is 63 degrees or more, and is less than 80 degrees. The GaN based semiconductor epitaxial region 15 is provided on the primary surface 13a. On the GaN based semiconductor epitaxial region 15, an active layer 17 is provided. The active layer 17 includes one semiconductor epitaxial layer 19. The semiconductor epitaxial layer 19 is composed of InGaN. The thickness direction of the semiconductor epitaxial layer 19 tilts with respect to the reference axis “Cx.” The reference axis “Cx” extends in the direction of the [0001] axis. This structure provides the GaN based semiconductor optical device that can reduces decrease in light emission characteristics due to the indium segregation.

Abstract: An LED module A1 includes LED chips 3R, 3G, 3B, and a module substrate 1 on which the LED chips 3R, 3G, 3B are mounted. A wire 4R is connected to the LED chip 3R, and the LED chips 3G and 3B are arranged to face each other across the wire 4R. With this arrangement, the LED module A1 is reduced in size, and red light, green light and blue light are properly mixed.

Abstract: A light emitting diode chip includes a device for protection against overvoltages, e.g., an ESD protection device. The ESD protection device is integrated into a carrier, on which the semiconductor layer sequence of the light emitting diode chip is situated, and is based on a specific doping of specific regions of said carrier. By way of example, the ESD protection device is embodied as a Zener diode that is connected to the semiconductor layer sequence by means of an electrical conductor structure.

Abstract: The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided.

Abstract: A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.

Abstract: In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.

Abstract: A method of manufacturing a colour active matrix display device comprises forming islands over a rigid carrier substrate, forming a plastic substrate over the rigid carrier substrate, forming an array of pixel circuits over the plastic substrate and forming a display layer over the array of pixel circuits. The rigid carrier substrate is then released from the plastic substrate and the plastic substrate then has channels defined by the islands. These are filled to define colour filter portions. The formation of a plastic substrate on a rigid carrier, with the use of a subsequent lift off process, enables the circuit arrays to be made on very thin plastic sheets. The colour filters can then be made on the outside of the LC cell. Depressions are formed in the plastic substrate registered to the circuit array, and these are filled in with colour filter material, for example by ink jet printing.

Abstract: A light emitting display device includes a light emitting diode and a thin film transistor on a substrate, the light emitting diode and thin film transistor being electrically coupled to each other, and a photo diode on the substrate, the photo diode including an intrinsic region and a P-type doping region coupled to each other.

Abstract: An optical sensor device comprises a light source, a light detector, and an opaque light barrier including a first portion to block light from being transmitted directly from the source to the detector. A second portion of the light barrier extends from the first portion in a direction towards the light source, such that a portion of the second portion covers at least a portion of light emitting element(s) of the source, to reduce an amount of specular reflections, if a light transmissive cover plate were placed over the sensor. Additionally, a third portion of the barrier can extend from the first portion, in a direction towards to the detector, such that a portion of the third portion covers at least a portion of light detecting element(s) of the detector, to reduce an amount of specular reflections that would be detected by the detecting element(s) of the detector, if a light transmissive cover plate were placed over the sensor. Additionally, an off-centered lens can cover a portion of the light source.

Abstract: A compound semiconductor light-emitting device has a light-emitting layer, on a substrate, wherein at least a part of a substrate portion of the device side surface has recessed portions in a side direction of the device.

Abstract: A light emitting diode package structure having a heat-resistant cover and a method of manufacturing the same include a base, a light emitting diode chip, a plastic shell, and a packaging material. The plastic shell is in the shape of a bowl and has an injection hole thereon. After the light emitting diode chip is installed onto the base, the plastic shell is covered onto the base to fully and air-tightly seal the light emitting diode chip, and the packaging material is injected into the plastic shell through the injection hole until the plastic shell is filled up with the packaging material to form a packaging cover, and finally the plastic shell is removed to complete the LED package structure.

Abstract: A method for forming a light source by plurality of light-emitting units, includes: step (A), determining the number of the light-emitting units based on following factors: the factors include a maximum supply voltage of a power supply circuit and a working voltage of each of the light-emitting units; step (B), determining a set power of each of the light-emitting units based on a set power of the light source and the number of the light-emitting units determined in the step (A); step (C), fabricating or selecting each of the light-emitting units based on the working voltage of each of the light emitting units and the set power of each of the light-emitting units determined in the step (B); step D), forming the light source by connecting each of the light-emitting units obtained in the step (C) in series according to the number of the light-emitting units determined in the step (A).

Abstract: A light source is described herein. An embodiment of the light source comprises a reflector cup having a cavity; a light emitter located in the cavity; a first encapsulant encompassing the light emitter; and a film located adjacent the first encapsulant, the film comprising phosphor.

Abstract: A photoelectronic element includes a composite substrate including an electrically insulative substrate having a chamber; an intermediate layer; and an electrically conductive substrate; a bonding layer including an electrically conductive region and an electrically insulative region; a first current spreading layer; a first semiconductor stacked layer including a first semiconductor layer, an active layer, and a second semiconductor layer; a current blocking layer; a second current spreading layer; and a first electrode.

Abstract: A device of a light-emitting diode and a method for fabricating the same are provided. The LED device is made by forming a patterned epitaxial layer, a light-emitting structure, etc., on a substrate. In a subsequent process, the patterned epitaxial layer serves as a weakened structure, and can be automatically broken and a rough surface is thus formed. The weakened structure is formed with a specified height, and has pillar structures. The light-emitting structure is formed on the weakened structure. During a cooling process at room temperature, the weakened structure is automatically broken and a rough surface is thus formed.

Abstract: An active device array substrate, having at least a substrate, a first metal layer, an insulator layer, a second metal layer, a plurality of pixel electrodes and a plurality of active devices, is provided. The substrate has a display area and a narrow frame area. The first metal layer disposed on the substrate includes a plurality of first gate lines arranged laterally. The insulator layer is disposed on the first metal layer. The second metal layer disposed above an insulator layer includes a plurality of data lines and second gate lines arranged vertically. The first gate lines and the data lines divide the display area into a plurality of pixel areas. The second gate line disposed between the pixel areas is electrically connected to the first gate line. Each pixel electrode is electrically connected to the data line and the first gate line via each active array device.

Abstract: A transflective LCD panel and a manufacturing method for lower substrate thereof are provided. The transflective LCD panel includes an upper substrate, a liquid crystal layer and a lower substrate. The liquid crystal layer, including a plurality of liquid crystal molecules, is disposed between the upper substrate and the lower substrate. The lower substrate includes an active array structure layer, a plurality of transparent pixel electrodes and a cushion layer. The active array structure layer includes a plurality of transparent bottom electrodes, transistor structures and an insulation layer. The insulation layer covers the transparent bottom electrode. The transparent pixel electrodes are formed on the active array structure layer, wherein each transparent pixel electrode partially overlaps the corresponding transparent bottom electrode and the overlap is located at the transmissive region.

Abstract: The disclosure facilitates testing and binning of multiple LED chip or other optoelectronic chip packages fabricated on a single semiconductor wafer. The testing can take place prior to dicing. For example, in one aspect, metallization on the front-side of a semiconductor wafer electrically connects together cathode pads (or anode pads) of adjacent sub-mounts such that the cathode pads (or anode pads) in a given column of sub-mounts are electrically connected together. Likewise, metallization on the back-side of the wafer electrically connects together anode pads (or cathode pads) of adjacent sub-mounts such that the anode pads (or cathode pads) in a given row of sub-mounts are electrically connected together. Probe pads, which can be located one or both sides of the wafer, are electrically connected to respective ones of the rows or columns.

Abstract: A thermal energy dissipating arrangement includes a semiconductor device and a thermally conductive medium. The semiconductor device includes a semiconductor circuit defining a semiconductor junction and encapsulating material in physical contact with and surrounding the semiconductor circuit. The thermally conductive medium defines an opening sized to receive the semiconductor device such that the thermally conductive medium defining the opening is in physical, thermally conductive contact with an exterior surface of the encapsulating material about the semiconductor device with the thermally conductive medium defining the opening intersecting an angle of less than or equal to a predefined angle relative to a plane defined by the semiconductor junction about a periphery of the semiconductor circuit.

Abstract: A method of manufacturing a display device includes forming a thin film transistor on an insulating substrate, forming an electrode which is electrically connected with the thin film transistor, forming a wall which surrounds the electrode, supplying a first solvent to the electrode that is surrounded by the wall, and supplying ink which comprises an organic material and a second solvent to the electrode which has previously received the first solvent. Thus, the manufacturing method produces a display device which has a uniform organic layer.

Abstract: Disclosed herein is an exemplary photoelectric sensor having an emitting portion for emitting light toward a target and a receiving portion for receiving, through a receive lens, reflected light that is at least some of the emitted light that is reflected by the target. The sensor further includes a refraction block having a block first surface and a block second surface wherein the reflected light received from the receive lens is refracted by at least one of the block first surface and the block second surface as it passes through the refraction block. The sensor also includes a photodetector for receiving the reflected light refracted by the refraction block and provides a detection signal indicative of the reflected light received.

Abstract: A ferrous-metal-alkaline-earth-metal mixed silicate based phosphor is used in form of a single component or a mixture as a light converter for a primarily visible and/or ultraviolet light emitting device. The phosphor has a rare earth element as an activator. The rare earth element is europium (Eu). Alternatively, the phosphor may have a coactivator formed of a rare earth element and at least one of Mn, Bi, Sn, and Sb.

Abstract: Provided is a light-emitting element including a cathode; an anode; a first light-emitting layer that is disposed between the cathode and the anode and emits in a first color; a second light-emitting layer that is disposed between the first light-emitting layer and the cathode and emits in a second color that is different from the first color; and an intermediate layer that is disposed between the first light-emitting layer and the second light-emitting layer so as to be in contact with these layers and has a function of controlling the migration of holes and electrons between the first light-emitting layer and the second light-emitting layer.

Abstract: A light emitting diode (10) includes an LED chip (14) and an encapsulant (16) enclosing the LED chip. The LED chip has a light emitting surface (141), and the encapsulant has a light output surface (161) over the light emitting surface. The light output surface defines a plurality of annular, concentric grooves (163). Each groove is cooperatively enclosed by a first groove wall (165) and a second groove wall (166). The first groove wall is a portion of a circumferential side surface of a cone, and a conical tip of the cone is located on the light emitting surface of the LED chip.

Abstract: A semiconductor device includes a substrate having an insulating surface; a light-transmitting first electrode provided over the substrate; a light-transmitting second electrode provided over the substrate; a light-transmitting semiconductor layer provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected to the first electrode; an insulating layer provided so as to cover at least the semiconductor layer; a light-transmitting third electrode provided over the insulating layer in a region overlapping with the semiconductor layer; and a second wiring electrically connected to the third electrode.

Abstract: Provided is a light emitting device. The light emitting device comprises a body, a light emitting diode on the body, a resin layer on the light emitting diode, and a primer layer containing a metal material on the resin layer.

Abstract: Disclosed are a light emitting device having a plurality of light emitting cells connected in series and a method of fabricating the same. The light emitting device includes a buffer layer formed on a substrate. A plurality of rod-shaped light emitting cells are located on the buffer layer to be spaced apart from one another. Each of the light emitting cells has an n-layer, an active layer and a p-layer. Meanwhile, wires connect the spaced light emitting cells in series or parallel. Accordingly, arrays of the light emitting cells connected in series are connected to be driven by currents flowing in opposite directions. Thus, there is provided a light emitting device that can be directly driven by an AC power source.

Abstract: A light source and method for making the same are disclosed. The light source includes a substrate and a light emitting structure that is deposited on the substrate. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first segment in series with the second segment. A first blocking diode between the light emitting structure and the substrate prevents current from flowing between the light emitting structure and the substrate when the light emitting structure is emitting light. The barrier extends through the light emitting structure into the first blocking diode.

Abstract: The present invention provides a semiconductor light-emitting device that includes a compound semiconductor layer formed by laminating a first clad layer, a light-emitting layer and a second clad layer, a plurality of first ohmic electrodes formed on the first clad layer, a plurality of second ohmic electrodes formed on the second clad layer, a transparent conductive film that is formed on the first clad layer of the compound semiconductor layer and is conductively connected to the first ohmic electrodes, a bonding electrode formed on the transparent conducting film, and a support plate that is positioned on the second clad layer side of the compound semiconductor layer and is conductively connected to the second ohmic electrodes.

Abstract: Disclosed is a light emitting device. The light emitting device comprises a conductive substrate, an insulating layer on the conductive substrate, a plurality of light emitting device cells on the insulating layer, a connection layer electrically interconnecting the light emitting device cells, a first contact section electrically connecting the conductive substrate with at least one light emitting device cell, and a second contact section on the at least one light emitting device cell.

Abstract: A light emitting device for generating infrared light includes a substrate, a first metal layer, a dielectric layer and a second metal layer. The substrate has a first surface. The first metal layer is formed on the first surface of the substrate. The dielectric layer is formed on the first metal layer. A thickness of the dielectric layer is greater than a particular value. The second metal layer is formed on the dielectric layer. When the light emitting device is heated, the dielectric layer has a waveguide mode such that the infrared light generated by the light emitting device can be transmitted in the dielectric layer. A wavelength of the infrared light generated in the waveguide mode relates to the thickness of the dielectric layer.

Abstract: The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply.

Abstract: Provided are a light emitting package capable of controlling a color temperature, a fabricating method thereof, and a color temperature controlling method of the light emitting package. The light emitting package includes a package body, a first electrode and a second electrode formed on the package body and spaced apart from each other, a light emitting element formed on the package body and electrically connected to the first electrode and the second electrode, and a thin film resistor connected in series to the first electrode.

Abstract: A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.

Abstract: Disclosed is a light emitting device having a plurality of light emitting cells. The light emitting device comprises a thermally conductive substrate, such as a SiC substrate, having a thermal conductivity higher than that of a sapphire substrate. The plurality of light emitting cells are connected in series on the thermally conductive substrate. Meanwhile, a semi-insulating buffer layer is interposed between the thermally conductive substrate and the light emitting cells. For example, the semi-insulating buffer layer may be formed of AlN or semi-insulating GaN. Since the thermally conductive substrate having a thermal conductivity higher than that of a sapphire substrate is employed, heat-dissipating performance can be enhanced as compared with a conventional sapphire substrate, thereby increasing the maximum light output of a light emitting device that is driven under a high voltage AC power source.

Abstract: An ultra-violet light-emitting device and method for fabricating an ultraviolet light emitting device, 12, (LED or an LD) with an AlInGaN multiple-quantum-well active region, 10, exhibiting stable cw-powers. The device includes a non c-plane template with an ultraviolet light-emitting structure thereon. The template includes a first buffer layer, 321, on a substrate, 100, then a second buffer layer, 421, on the first preferably with a strain-relieving layer, 302, in both buffer layers. Next there is a semi-conductor layer having a first type of conductivity, 500, followed by a layer providing a quantum-well region, 600. Another semi-conductor layer, 700, having a second type of conductivity is applied next. Two metal contacts, 980 and 990, are applied to this construction, one to the semiconductor layer having the first type of conductivity and the other to the semiconductor layer having the second type of conductivity, to complete the light emitting device.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of isolation layers formed along an outer peripheral portion of the light emitting structure below the light emitting structure, a metal layer interposed between the isolation layers, and a second electrode layer formed below the light emitting structure.

Abstract: An exemplary light emitting diode (LED) light source includes a frame and light emitting units. The frame includes a supporting surface having a curved surface and one or more receiving holes configured in the curved surface. Each of the light emitting units is received in a respective receiving hole. Each of the light emitting units includes an LED die for generating light of two polarization states, a reflective polarizer for preferentially reflects one polarization state back into the LED die and preferentially transmitting the other polarization state out of the light emitting unit, a polarization converting film for converting the reflected light of the first polarization state into light of the second polarization state, and a reflective film for reflecting light of the converted second polarization state to the reflective polarizer.

Abstract: A light emitting diode (LED) includes a substrate, a temperature detecting pattern, and a semiconductor structure. The temperature detecting pattern is formed on the substrate. Then the semiconductor structure is formed on the temperature detecting pattern and the substrate. The semiconductor structure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer. Per above-mentioned structural design, the temperature detecting pattern directly integrated into the LED can measure the actual temperature of PN junction with high precision.

Abstract: The apparatus, methods, system and devices of the present invention provides transflective LCD system structure wherein each pixel is composed of at least three reflective sub-pixels and at least one transmissive sub-pixel. The reflective sub-pixels have a color filter layer for displaying color reflective images and the transmissive sub-pixel it is driven by color sequential imaging method for displaying a color transmissive image. The configuration of the sub-pixels and the location of the sub-pixel electronics increases the aperture ratio of both transmissive sub-pixel and reflective sub-pixel to improve the image brightness and lower the overall power consumption of the device.

Abstract: The present invention provides a method for producing a light-emitting diode, the method comprising a lamination step of forming a laminated semiconductor layer by sequentially laminating an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer onto a substrate, as well as forming a plurality of reflective p-type electrodes on top of the p-type semiconductor layer, a plating step of forming a seed layer that covers the reflective p-type electrodes and the p-type semiconductor layer, and fowling a plating layer on top of the seed layer, a removal step of removing the substrate from the n-type semiconductor layer, thereby exposing a light extraction surface of the n-type semiconductor layer, and an electrode formation step of performing dry etching of the light extraction surface of the n-type semiconductor layer using an etching gas containing the same element as a dopant element within the n-type semiconductor layer, and subsequently forming an n-type electrode on the light extra

Abstract: A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.

Abstract: A light emitting device and a method of fabricating thereof are provided. The method of fabricating the light emitting device comprises: providing a substrate having a first major surface and a second major surface; forming a plurality of light-emitting stacks on the first major surface; forming an etching protection layer on each of the light emitting stacks; forming a plurality of holes by a discontinuous laser beam on the substrate; etching the plurality of holes; and slicing off the substrate along the plurality of holes to form a light emitting device. The light emitting device has a substrate wherein the sidewall of the substrate comprising a first area with a substantially flat surface and a second area with substantially textured surface.

Abstract: Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.

Abstract: The invention discloses a light-emitting diode including a substrate, a main stack structure, a plurality of secondary pillars, a transparent insulating material, a transparent conducting layer, a first electrode and a second electrode. The pillars are formed on the substrate and surrounding the main stack structure. The main stack structure and each of the pillars has a first conducting-type semiconductor layer, a luminescing layer, and a second conducting-type semiconductor layer formed on the substrate in sequence. The transparent insulating material fills the gaps between the pillars and is as high as the pillars. The transparent conducting layer is coated on the main stack, the pillars and the transparent insulating material. The first electrode is formed on the transparent conducting layer and second electrode is formed on the first conducting-type semiconductor layer.

Abstract: Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes steps of forming a semiconductor element layer on a first substrate; bonding a second substrate to the semiconductor element layer; and replacing the first substrate with a combining substrate, wherein the combining substrate has a thermal conductivity larger than that of the first substrate.

Abstract: A light emitting diode (LED) structure, a LED packaging structure, and a method of forming LED structure are disclosed. The LED structure includes a sub-mount, a stacked structure, an electrode, an isolation layer and a conductive thin film layer. The sub-mount has a first surface and a second surface opposite the first surface. The stacked structure has a first semiconductor layer, an active layer and a second semiconductor layer that are laminated on the first surface. The electrode is disposed apart from the stacked structure on the first surface. The isolation layer is disposed on the first surface to surround the stacked structure as well as cover the lateral sides of the active layer. The conductive thin film layer connects the electrode to the stacked structure and covers the stacked structure.