Abstract: The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being configured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf, and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question.

Abstract: A manufacturing method of a photonic crystal is provided. In the method, a high-refractive-index material is conformally deposited on an exposed portion of a periodic template composed of a low-refractive-index material by an atomic layer deposition process so that a difference in refractive indices or dielectric constants between the template and adjacent air becomes greater, which makes it possible to form a three-dimensional photonic crystal having a superior photonic bandgap. Herein, the three-dimensional structure may be prepared by a layer-by-layer method.

Abstract: A process for the coating of substrates comprising insertion of a substrate into a process oven, plasma cleaning of the substrate, rehydration of the substrate, dehydration of the substrate, withdrawal of a metered amount of one or more chemicals from one or more chemical reservoirs, vaporizing the withdrawn chemicals in one or more vapor chambers, and transfer of the vaporized chemicals into a process oven, thereby reacting with the substrate. An apparatus for the coating of substrates comprising a process oven, a gas plasma generator, a metered chemical withdrawal subsystem, and a vaporization subsystem.

Abstract: A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.

Abstract: A vapor growth apparatus according to an aspect of the present invention includes a reaction chamber into which a wafer is loaded, a first valve which is connected to the reaction chamber and controls a flow rate of a first exhaust gas discharged from the reaction chamber, a first pump which is provided on a downstream side of the first valve and discharges the first exhaust gas, a first pressure gauge which detects a first pressure that is a pressure of the reaction chamber, a first pressure control unit which controls the first valve based on the first pressure, a second pressure gauge which detects a second pressure that is a pressure between the first valve and the first pump, and a second pressure control unit which controls an operation volume of the first pump based on the first pressure and the second pressure.

Abstract: Disclosed are precursors having a pyrrolecarbaldiminates ligand and methods of synthesizing the same. The pyrrolecarbaldiminates ligand may be substituted.

Abstract: Disclosed are non-pyrophoric mixtures of silicon compounds and solvents. Also disclosed are methods of stabilizing the pyrophoric silicon compounds (precursors). The non-pyrophoric mixtures may be used to deposit silicon-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.

Abstract: Embodiments relate to depositing on one or more layers of materials on a fiber or fiber containing material using atomic layer deposition (ALD) to provide or enhance functionalities of the fibers or fiber containing material. Such functionalities include, for example, higher rigidity, higher strength, addition of resistance to bending, addition of resistance to impact or addition of resistance to tensile force of a fiber or fiber containing material. A layer of material is deposited coated on the fibers or the fiber containing material and then the surface of the material is oxidized, nitrified or carbonized to increase the volume of the material. By increasing the volume of the material, the material is subject to compressive stress. The compressive stress renders the fibers or the fiber containing material more rigid, stronger and more resistant against bending force, impact or tensile force.

Abstract: The present invention relates to a silver complex obtained by reacting at least one silver compound represented by the formula 2 below with at least one ammonium carbamate compound or ammonium carbonate compound represented by the formula 3, 4 or 5 below:

Abstract: A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.

Abstract: A novel metal compound of general formula (1), a material for chemical vapor phase growth containing the compound, and a process for forming a metal-containing thin film by chemical vapor phase growth using the material. Among the compounds of formula (1), those wherein X is a chlorine atom are preferred because of inexpensiveness and high volatility. When M is titanium, those wherein m is 1 are preferred as having a greater difference between a volatilization temperature (vapor temperature) and a deposition temperature (reaction temperature), which provides a broader process margin. In formula (1), M is titanium, zirconium, or hafnium; X is a halogen atom; and m is 1 or 2.

Abstract: A method for forming an aperture includes stamping an aperture into the article using a pellet, and refining aperture shape(s) and/or aperture dimensions. Methods for forming articles having reduced residual compressive stress are also disclosed. Very generally, the methods include establishing a diamond coating on at least a portion of a substrate, and applying a stress-relief process to the diamond coating, the substrate, or combinations thereof.

Abstract: Methods for crosslinking nanoparticles and coated substrates made according to the methods are described. The crosslinked nanoparticles on substrates can be used in electrochromic devices and/or photovoltaic devices.

Abstract: A vapor deposition apparatus, which is capable of performing a thin film deposition process and improving characteristics of a formed thin film, includes: a chamber having an exhaust opening; a stage disposed in the chamber, and comprising a mounting surface on which the substrate may be mounted; an injection unit having at least one injection opening for injecting a gas into the chamber in a direction parallel with a surface of the substrate, on which the thin film is to be formed; a guide member facing the substrate to provide a set or predetermined space between the substrate and the guide member; and a driving unit conveying the stage and the guide member.

Abstract: A method and apparatus for depositing a film on a substrate includes introducing a material and a carrier gas into a heated chamber. The material may be a semiconductor material, such as a cadmium chalcogenide. A resulting mixture of vapor and carrier gas containing no unvaporized material is provided. The mixture of vapor and carrier gas are remixed to achieve a uniform vapor/carrier gas composition, which is directed toward a surface of a substrate, such as a glass substrate, where the vapor is deposited as a uniform film.

Abstract: Methods for repairing gas turbine engine components are provided. In this regard, a representative method includes: applying a surface treatment to the component such that locations at an exterior surface of the component exhibiting inter-granular attack are protected from erosion during a cleaning process; and cleaning the component using hydrogen fluoride ion cleaning to clean the component.

Abstract: There are provided a thermal processing apparatus, a method for regulating a temperature of a thermal processing apparatus, and a program, by which a temperature can be easily regulated. A control part 50 of a thermal processing apparatus 1 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W, and judges whether the SiO2 films satisfy an in-plane uniformity. When the in-plane uniformity is not judged to be satisfied, the control part 50 calculates a temperature of a preheating part 23 by which temperature the in-plane uniformity can be satisfied. The control part 50 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W under process conditions in which the temperature of the preheating part 23 has been varied into the calculated temperature, and the temperature of the preheating parts 23 is regulated.

Abstract: It is possible to compose a chart by filtering measurement information using a product wafer number in a server device including: an instruction receiving unit for storing therein plural measurement information, which is time sequential information measured in a plurality of manufacturing apparatuses and has a product wafer number and time information, and for receiving an output instruction of a chart containing the product wafer number; a fault detection unit for, when the instruction receiving unit receives the output instruction, reading a multiplicity of measurement information satisfying a product wafer number condition contained in the output instruction, and determining whether the read multiplicity of measurement information satisfies the condition information; an output information composing unit for composing the output information according to a determination result of the fault detection unit; and an output unit for outputting the output information composed by the output information composing un

Abstract: A crucible includes a main body and a cover. The main body includes a first end surface, an opposite second end surface, a hollow part and a solid part. The hollow part and the solid part extend from the first end surface to the second end surface. The hollow part defines a receiving space. The first end surface defines an opening communicating with the receiving space, and includes a step positioned between the hollow part and the solid part. The solid part includes a heat end adjacent to the step. The heat end is heated by an electro-beam. The cover covers the opening, and defines a number of gas holes. The main body and the cover are made of thermal conductive refractory material.

Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.

Abstract: A cured organopolysiloxane resin film having gas barrier properties comprising a fiber-reinforced film made of a hydrosilylation-cured organopolysiloxane resin and having a transparent inorganic layer selected from silicon oxynitride layer, silicon nitride layer, and silicon oxide layer formed on the fiber-reinforced film wherein a layer of cured organopolysiloxane that contains an organic functional group, silanol group, hydrosilyl group, or an organic group produced by the polymerization of polymerizable organic functional groups is interposed between said fiber-reinforced film and inorganic layer. Also, a method of producing this cured organopolysiloxane resin film having gas barrier properties.

Abstract: The present application relates to methods of forming patterned thin films on a substrate. In some embodiments a first patterned layer may be deposited on a substrate by a imprint lithography technique, such as microcontact printing. A second layer of a desired composition is selectively deposited over the first patterned layer by a vapor phase deposition process, such as ALD or CVD.

Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

Abstract: A method of applying an aluminide coating to an internal cavity of a metal part, such as an airfoil. The method includes inserting a perforated sealed container containing a source of aluminide into the internal cavity and vaporizing the aluminide source to form an aluminide coating on the wall surface of the cavity.

Abstract: A method for directly growing carbon nanotubes, and in particular single-walled carbon nanotubes on a flat substrate, such as a silicon wafer, and subsequently transferring the nanotubes onto the surface of a polymer film, or separately harvesting the carbon nanotubes from the flat substrate.

Abstract: A metal recovery apparatus recovers metal components from an exhaust gas exhausted from a processing chamber in which a thin film is formed on the surface of a target substrate by using a source gas formed of an organic metal compound serving as a source, and scrubs the exhaust gas. The metal recovery apparatus 66 includes a trap unit having an adsorption member for attaching thereon metal components included in the source gas by heating the exhaust gas and thus thermally decomposing an unreacted source gas included in the exhaust gas; and the scrubbing unit including a catalyzer for oxidizing and thus scrubbing harmful gas components included in the exhaust gas that has flowed through the trap unit.

Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

Abstract: Graphene layers can be formed on a dielectric substrate using a process that includes forming a copper thin film on a dielectric substrate; diffusing carbon atoms through the copper thin film; and forming a graphene layer at an interface between the copper thin film and the dielectric substrate.

Abstract: A first element (10) adapted to selectively engage a second element (20), wherein the first element comprises a coating (12) and at least an engaging portion (14) of the first element is coated in said coating, wherein the coating is formed by vapour deposition to provide a thermo-chemically stable layer for temperatures up to 800° C. The coating (12) may comprise one or more of a nitride, oxide or carbide of titanium, chromium or aluminium.

Abstract: Methods of vapor depositing metal-containing films using certain organometallic compounds containing a carbonyl-containing ligand are disclosed.

Abstract: Hydrogen selective coatings, coated articles and methods for their formation and for hydrogen separation or purification. The coatings are formed by atomic layer deposition of suitable metal oxides with desirable hydrogen activation energy or hydrogen flux, e.g., silicon dioxide, and can be borne on a nonporous, thin-film metal or cermet substrate, e.g., a palladium sheet or layer. The coated substrate may include a porous support for the sheet or layer. The coated article may be used as a purification membrane and the coating can protect the metal layer from contaminants in the gas or process stream from which hydrogen is being purified. In some embodiments, the coated article can provide such protection at elevated temperatures in excess of 300° C.; and in other embodiments, can provide protection at temperatures in excess of 600° C. and even in excess of 800° C.

Abstract: Porous media may be infused with a layer of chemical upon an extended surface of the porous media by forming a vapor of the chemical and condensing the vapor onto exposed surfaces of the porous media.

Abstract: In imprint lithography, the mold is coated with a surface release layer for a non-sticking separation. Bonding strength of the release layer to the mold depends on the cleanness of the surface and the process of release layer deposition. In accordance with the invention, the mold is disposed in an evacuable chamber, cleaned to remove surface organic contamination and coated with the surface release layer in a chamber, all without relocation or undesired time delay. The chamber encloses a support chuck for the mold or substrate, a surface cleaner unit adjacent the support, a heating source adjacent the support, and advantageously, sensors of measuring chamber pressure, vapor partial pressure and moisture concentration. A vapor source connected to the chamber supplies release surfactant vapor. The mold is cleaned, and the cleaning is followed by vapor phase deposition of the surfactant. The mold is advantageously heated. Typical ways of cleaning include exposure to ozone or plasma ion etch.

Abstract: An object of the present invention is to provide a single-phase film of a metal sulfide with good quality, and a method for preparing a metal sulfide film at a low cost in a convenient manner. The present invention provides a preparation method of a metal sulfide film, comprising the steps of providing metal halide, such as iron halide (FeCl3, FeI3, FeBr3, FeCl2, FeI2 and FeBr2), as a first raw material and a thioamide compound, such as thioacetamide, as a second raw material, preferably vaporizing these raw materials and reacting them at atmospheric pressure; and a metal sulfide film prepared by this method.

Abstract: A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.

Abstract: The present invention provides vapor deposition methods that overcome the kinetic restrictions imposed by more conventional vapor deposition processes and liquid-cooling techniques to form amorphous molecular solids with greatly enhanced stabilities. The present methods produce amorphous molecular solids having stabilities, as measured by fictive temperature, that cannot be achieved using liquid-cooling methods.

Abstract: In a deposited thin film for use in a semiconductor device or the like, adsorption of contaminants is a problem. In the case in which a gas pressure in a chamber is maintained in a viscous flow region, the adsorption of the organic substances is significantly decreased as compared with the case in which the gas pressure is maintained in a molecular flow region. The gas pressure is controlled so that it can be set in the molecular flow region when forming the deposited thin film, and set in the viscous flow region when such deposition is not being performed. Thus, the deposited thin film is formed with less contamination from the organic substances.

Abstract: Disclosed are processes for forming hydrophilic surfaces on aluminum and aluminum substrates having highly hydrophilic surfaces.

Abstract: The present invention relates generally to methods for producing a coated jewelry article or a coated component of a jewelry article, comprising a jewelry article or a component of a jewelry article, a first metallic coating, and a second metallic coating.

Abstract: An intraocular lens with a hydrophilic polymer coating composition and method of preparing same are provided. Specifically, a composition suitable for reducing tackiness in intraocular lenses is provided wherein an acrylic intraocular lens is treated by vapor deposition with an alkoxy silyl terminated polyethylene glycol polymer composition.

Abstract: Some embodiments include methods of forming metal-containing structures. A first metal-containing material may be formed over a substrate. After the first metal-containing material is formed, and while the substrate is within a reaction chamber, hydrogen-containing reactant may be used to form a hydrogen-containing layer over the first metal-containing material. The hydrogen-containing reactant may be, for example, formic acid and/or formaldehyde. Any unreacted hydrogen-containing reactant may be purged from within the reaction chamber, and then metal-containing precursor may be flowed into the reaction chamber. The hydrogen-containing layer may be used during conversion of the metal-containing precursor into a second metal-containing material that forms directly against the first metal-containing material. Some embodiments include methods of forming germanium-containing structures, such as, for example, methods of forming phase change materials containing germanium, antimony and tellurium.

Abstract: The present invention relates to a process for depositing films on a substrate by chemical vapour deposition (CVD) or physical vapour deposition (PVD), said process employing at least one boron compound. This process is particularly useful for fabricating photovoltaic solar cells. The invention also relates to the use of boron compounds for conferring optical and/or electrical properties on materials in a CVD or PVD deposition process. This process is also particularly useful for fabricating a photovoltaic solar cell.

Abstract: A Fabry-Perot filter is applied as a thin coating on a film, for example, a packaging film, and permits interesting color effects. The coating has a layered construction in which both reflecting layers of the filter may be made of aluminum and the intermediate layer between the reflecting layers may be made of aluminum oxide.

Abstract: A method and a system are provided for forming planar absorber layers or structures by planarizing and reacting precursor layers in a reactor. A precursor structure is first formed over the front surface of a foil substrate and then planarized through application of pressure by a smooth surface while heated to a first temperature range to obtain a planar layer. The planar layer may be only partially reacted. The planar layer is further reacted at a second temperature range to form a fully or completely reacted planar absorber layer. The planar absorber layer may include at least one Group IB material, at least one Group IIIA material and at least one Group VIA material. The planar absorber layer may be a Group IBIIIAVIA compound layer.

Abstract: An organic layer deposition apparatus capable of protecting or preventing a patterning slit sheet from sagging, and a frame sheet assembly for the organic layer deposition apparatus.

Abstract: A device for coating an exterior of an elongate object includes a housing structure with an elongate chamber having first and second opposite ends. A port communicates with the first end for receiving the elongate object and an outlet is located at the second end. An air supply passage and a coating material supply passage communicate with the elongate chamber. Pressurized air and coating material are adapted to enter the elongate chamber through the air supply passage and the coating material supply passage, respectively, to form a mist in the elongate chamber moving toward the outlet while coating the exterior of the object. A method of coating an exterior surface of the elongate object with the coating material includes holding the elongate object lengthwise in the elongate chamber, mixing the pressurized air and the coating material to form a mist, and coating the exterior surface while directing the mist around the exterior surface and toward the outlet of the elongate chamber.

Abstract: A method comprises transporting a first stream of a carrier gas to a delivery device that contains a solid precursor compound. The first stream of carrier gas is at a temperature greater than or equal to 20° C. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream and the second stream are combined to form a third stream, such that the dewpoint of the vapor of the solid precursor compound in the third stream is lower than the ambient temperature. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.

Abstract: A method of bonding a metal to a substrate is disclosed herein. The method involves forming a nano-brush on a surface of the substrate, where the nano-brush includes a plurality of nano-wires extending above the substrate surface. In a molten state, the metal is introduced onto the substrate surface, and the metal surrounds the nano-wires. Upon cooling, the metal surrounding the nano-wires solidifies, and during the solidifying, at least a mechanical interlock is formed between the metal and the substrate.

Abstract: A method of bonding a metal to a substrate involves forming an oxide layer on a surface of the substrate, and in a molten state, over-casting the metal on the substrate surface. The over-casting drives a reaction at an interface between the over-cast metal and the oxide layer to form another oxide. The other oxide binds the metal to the substrate surface upon solidification of the over-cast metal.