Abstract: Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.

Abstract: A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes the in situ generation of a neutral-enriched deposition medium that is conducive to the formation of thin film materials having a low intrinsic defect concentration at any speed. In one embodiment, the deposition medium is created by forming a plasma from an energy transferring gas; combining the plasma with a precursor gas to form a set of activated species that include ions, ion-radicals, and neutrals; and selectively excluding the species that promote the formation of defects to form the deposition medium. In another embodiment, the deposition medium is created by mixing an energy transferring gas and a precursor gas, forming a plasma from the mixture to form a set of activated species, and selectively excluding the species that promote the formation of defects.

Abstract: Methods for the deposition via chemical vapor deposition or atomic layer deposition of metal containing films, such as, for example, metal silicate or metal silicon oxynitride films are described herein. In one embodiment, the method for depositing a metal-containing film comprises the steps of introducing into a reaction chamber, a metal amide precursor, a silicon-containing precursor, and an oxygen source wherein each precursor is introduced after introducing a purge gas.

Abstract: Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.

Abstract: Alkyl cyclopentadienyl precursors for use in ALD processes are disclosed. The present invention particularly relates to La alkyl cyclopentadienyl precursors, such as tris(isopropyl-cyclopentadienyl) Lanthanum.

Abstract: Conductive polymer coatings and methods of forming the same are provided.

Abstract: A wear-, erosion- and chemically-resistant material containing tungsten alloyed with carbon, the carbon being present in an amount of 0.01 wt % up to 0.97 wt % of the total weight, wherein the material preferably comprises a matrix of metallic tungsten with dispersed tungsten carbide nanoparticles having a particle size not greater than 50 nanometres, preferably not greater than 10 nanometres. The material is optionally also alloyed with fluorine, the fluorine being present in an amount of 0.01 wt % up to 0.4 wt % of the total weight. The material is extremely hard and tough.

Abstract: The present invention describes a layer system applied onto a transparent substrate, which layer system contains, embedded in functional layers, one or more blocker layers.

Abstract: An exemplary housing includes a metallic glass main body; and two coatings formed on the metallic glass main body. The coatings include an adhesive layer on the metallic glass main body, and an outer layer formed on the adhesive layer. Surface treating methods for making present housing are also provided.

Abstract: A reaction apparatus for a semiconductor fabrication apparatus, wherein the reaction apparatus includes at least two adjustable outlet ports for withdrawing reactant gases from the reaction chamber. Adjustment of the flow rate through each of the outlet ports selectively modifies the flow pattern of the reactant gases within the reaction chamber to maintain a desired flow pattern therewithin, such as a substantially uniform flow over the surface of a substrate being processed, and/or minimization of turbulence within the reactor.

Abstract: The present invention is related to an apparatus for the production of inorganic fullerene-like (IF) nanoparticles and nanotubes. The apparatus comprises a chemical reactor, and is further associated with a feeding set up and with a temperature control means for controlling the temperature along the reaction path inside the reactor so as to maintain the temperature to be substantially constant. The invention is further directed to a method for the synthesis of IF-WO3 nanoparticles having spherical shape and having a size up to 0.5 mu m and nanotubes having a length of up to several hundred mu m and a cross-sectional dimension of up to 200 nanometer.

Abstract: In a method of inhibiting the deposition of aluminium within a vacuum pump during the pumping from a process chamber of a gas stream containing an organoaluminium precursor, chlorine is supplied to the gas stream upstream of the vacuum pump to react with the precursor to form aluminium chloride, which can pass harmlessly through the pump in its vapour phase.

Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

Abstract: The present invention provides a method of manufacturing a solid support for biological analysis using a plastic material, the method including: depositing a metal film on a plastic substrate on which a microstructure is formed; depositing an inorganic oxide on the metal film; and anchoring a compound with an amino functional group or a compound with a water contact angle of 70 to 95 degrees on the inorganic oxide.

Abstract: Object: The present invention provides a method for forming a copper-containing film having a low resistance at a low temperature, according to the CVD technique.

Abstract: A film formation method is provided for masking a part of a surface of an object and subsequently forming a film, by a chemical vapor deposition method, on a surface on which a film should be formed that is an exposed part of the surface of the object. The film formation method includes, upon film formation in a reaction chamber, masking the object by using a mask having a gas path formed therewithin and vents connecting the gas path with an outer surface of the mask, and controlling concentration distribution of raw material substances in the reaction chamber so that a film formation rate in the surface on which a film should be formed is constant by discharging or attenuating raw material gases, using the gas path within the mask, supplied to a surface which is covered with the mask and on which no film is formed.

Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

Abstract: For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a ?c-Si layer (19) deposited on a large-surface substrate, (15) before each substrate is single treated at least parts of the addressed wall are precoated with a dielectric layer (13).

Abstract: The present invention discloses an organic zinc precursor for depositing an zinc oxide layer on a substrate by metal organic chemical vapor deposition (MOCVD), which is a zinc-ligand complex having the following formula: wherein Y is O or NR7; R1, R2 and R3 independently are H, halogen, C1-8 alkyl, C1-8 haloalkyl, aryl or haloaryl; R4, R5 and R7 independently are C1-8 alkyl, C1-8 haloalkyl, aryl or haloaryl; R6 is H, halogen, C1-8 alkyl or C1-8 haloalkyl.

Abstract: A method is disclosed for producing graphenic materials by templated growth along a preformed graphenic material lattice edge, wherein at least one of the graphenic material or template is translated during growth of the graphenic material. A method for preparing CNTs from preformed CNT substrates in the presence of cylindrical templating structures and a reactive carbon source in a fluid phase is also disclosed, wherein at least one of the CNT substrate or the cylindrical templating structure is translated during addition of carbon atoms to the CNT substrate. A method is also disclosed for preparing CNTs from preformed CNT substrates in the presence of cylindrical templating structures and a carbon source in a fluid phase, wherein non-thermalized excited states are produced on the CNT substrate and at least one of the CNT substrate or the cylindrical templating structure is translated during addition of carbon atoms to the CNT substrate.

Abstract: A substrate processing system which utilizes reactive substances or carrier gases to process the surface of a substrate is provided. The system includes a gas supply source for supplying a process gas containing a reactive substance, a reservoir tank connected to the gas supply source for reserving the process gas, a reactor for exposing a substrate placed therein to the process gas, a first circulation pipe for circulating the process gas inside the reactor to the reservoir tank, a second circulation pipe for circulating at least part of the process gas in the reservoir tank to the reactor, and a flow regulating valve disposed in the second circulation pipe for controlling the amount of process gas introduced into the reactor.

Abstract: A method of forming a polymer film on a surface of a substrate is described. The method comprises placing a substrate on a substrate holder in a vapor deposition system, and introducing a process gas to the vapor deposition system, wherein the process gas comprises a monomer, a cross-linking monomer, and an initiator. Thereafter, the substrate is exposed to the process gas in order to form a polymer film on the substrate, wherein the polymer film thermally decomposes at a decomposition temperature.

Abstract: The invention relates to a method for producing a displacer component that is coated with a diamond coating or layer as well as such a structural component (as a tribologically loaded part). In order to convey or dose a chemically aggressive fluid, a basic structural component (2, 3) is accurately produced in a first dimension (m1) from a chemically not sufficiently resistant but mechanically sufficiently stable first material (A) in a material removing manner. At least the surface sections of said first accurately sized basic component (2, 3) which are actively involved in the displacement are then coated with an at least 1 ?m thick layer (10) of synthetic diamond in a coating process such that a second size (m2) of the structural component is obtained that fits the displacer unit (1). The inventive method makes it possible to produce a chemically resistant, friction reduced structural component for displacing the chemically aggressive fluid.

Abstract: Disclosed herein is a hard coating film of laminate type which comprises more than one layer of a first kind, which has a composition represented by the formula (1a) below and a thickness of 1 to 80 nm, and more than one layer of a second kind, which has a composition represented by the formula (2a) below and a thickness of 1 to 80 nm, the layers being placed alternately one over another. (Cr(1-a)Ala)(C(1-x)Nx) ??(1a) (Zr(1-k)Hfk)(C(1-y)Ny) ??(2a) where each subscript denotes the atomic ratio specified below. 0.2?a?0.8 0.7?x?1 0?k?1 0.5?y?1 The hard coating film has outstanding high-temperature characteristics.

Abstract: This Invention concerns a ring (11) or other accessory and jewelry goods provided with a pattern resulting from processing a metal underlayer (111) of a noble metal and/or a metal plating layer (112) formed on the metal underlayer (111). The noble metal jewelry goods has the metal plating layer (112) formed in a uniform thickness on the whole upper surface of the metal underlayer (111) and has the metal underlayer (111) and/or the metal plating layer (112) enabled by the rod-shaped grinding tool (12) to form glossy regions (111-1) and (111-2) exposing the metal underlayer (111). The noble metal jewelry goods of this invention is enabled to form the metal plating layer region (112) that has not been ground by the rod-shaped grinding tool (12) at all and expose the metal plating layer.

Abstract: A delivery device for thin-film material deposition has at least first, second, and third inlet ports for receiving a common supply for a first, a second and a third gaseous material, respectively. Each of the first, second, and third elongated emissive channels allow gaseous fluid communication with one of corresponding first, second, and third inlet ports. The delivery device can be formed from apertured plates, superposed to define a network of interconnecting supply chambers and directing channels for routing each of the gaseous materials from its corresponding inlet port to a corresponding plurality of elongated emissive channels. The delivery device comprises a diffusing channel formed by a relief pattern between facing plates. Also disclosed is a process for thin film deposition. Finally, more generally, a flow diffuser and a corresponding method of diffusing flow is disclosed.

Abstract: An object of the present invention is to produce an oxide film having good surface morphology and crystal quality, by a metal organic chemical vapor deposition using two or more raw material gases of metal organic compounds and oxygen gas. It is used a film forming system having a first supply hole 11A, a second supply hole 11B, a third supply hole 11C and a film forming chamber 7. A first raw material gas “A” containing al first metal organic compound is supplied through the first supply hole 11A into the chamber 7. A second raw material gas “B” containing the second metal organic compound is supplied through the second supply hole 11B into the chamber 7, and oxygen gas “C” is supplied through the third supply hole 11C into the chamber 7. The oxygen gas “D” contacts the first raw material gas “E” before the oxygen gas is mixed with the second raw material gas “F” in the chamber 7.

Abstract: An embodiment of the present invention provides a method of making an electronically tunable dielectric material comprising mixing particles of at least one electronically tunable dielectric phase and particles of at least one compound of low loss complex perovskites, and particles of optional one other family of materials; and sintering the material.

Abstract: Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.

Abstract: The present invention concerns a method and an apparatus for removing substances from gases discharged from gas phase reactors. In particular, the invention provides a method for removing substances contained in gases discharged from an ALD reaction process, comprising contacting the gases with a “sacrificial” material having a high surface area kept at essentially the same conditions as those prevailing during the gas phase reaction process. The sacrificial material is thus subjected to surface reactions with the substances contained in the gases to form a reaction product on the surface of the sacrificial material and to remove the substances from the gases. The present invention diminishes the amount of waste produced in the gas phase process and reduces wear on the equipment.

Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula (I), wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

Abstract: A metal strip member (1) comprising a metal strip (2) having a thickness of less than 3 mm, and at least adjacent one side (3) consists of a substrate alloy with a chromium content of at least 10 wt %. The substrate alloy is on at least one side of the metal strip provided with a surface layer (4) of nickel, ruthenium, cobalt, palladium or an alloy thereof. Carbon and/or nitrogen atoms (5) are dissolved in the substrate alloy adjacent the surface layer providing compressive stresses, and essentially no carbides and/or nitrides are present in the substrate alloy. The invention also relates to resilient electrical contact spring member made of such a metal strip member and a method of manufacturing such a metal strip member.

Abstract: Disclosed herein are an apparatus for high-density plasma chemical vapor deposition and a method of forming an insulating layer using the same. The use of the apparatus and method enables efficient formation of the insulating layer in the gap between semiconductor devices with a high aspect ratio by dispersing a total demand amount of gas in the formation process. The high-density plasma chemical vapor deposition apparatus includes a plurality of gas suppliers to supply a gas into a chamber and to form an insulating layer between semiconductor devices, each of the gas suppliers including a gas injection valve to perform an on/off operation and a valve controller to control the on/off operation of the gas injection valve and to disperse a total demand amount of the gas.

Abstract: The present invention relates to a method for forming a conformal coating having a reactive surface. In the method, an ultrathin layer composed of a polymer having repeating units derived from unsubstituted p-xylylene, substituted p-xylylene, phenylene vinylene, phenylene ethynylene, 1,4-methylene naphthalene, 2,6-methylene naphthalene, 1,4-vinylene naphthalene, 2,6-vinylene naphthalene, 1,4-ethynylene naphthalene, 2,6-ethynylene naphthalene, combinations thereof, precursors therefor or combinations of precursors therefor, is deposited on a substrate by a thermal CVD process. The ultrathin layer is optionally exposed to a source of oxygen and then exposed to a reagent selected from ammonium hydroxide, tetramethylammonium hydroxide, ammonium sulfide, dimethyl sulfide, thioacetic acid, sodium hydrosulfide, sodium sulfide, hydrazine, acetamide and combinations thereof. The surface may be modified readily after the treatment.

Abstract: The alkoxide compound of the present invention is represented by general formula (I) below. The alkoxide compound of the present invention is an iron compound that can be delivered in a liquid state and is easily vaporized due to its high vapor pressure. The compound particularly enables production of thin films with excellent composition controllability, and hence is suitable for producing multi-component thin films by CVD. (In the formula, R1 and R2 each independently represent a hydrogen atom or C1-4 alkyl group, R3 and R4 each represent a C1-4 alkyl group, and A represents a C1-8 alkanediyl group.

Abstract: A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.

Abstract: A vapor deposition apparatus is provided, which does not cause changes in composition, decomposition and quality change of an organic vapor deposition material. The organic vapor deposition material is placed on a conveying unit by an amount for a single substrate, and conveyed into a vapor deposition vessel preliminarily heated. Since a small amount of the organic vapor deposition material is heated and exhausted through generation of an organic material vapor under heating condition for each substrate, neither decomposition nor quality change with moisture occurs because heating time is short. Even though different organic compounds are mixed, no change in composition occurs so that an organic vapor deposition material in which a base material is mixed with a coloring substance can be pooled in a pooling tank and then placed in the conveying unit.

Abstract: The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses.

Abstract: A composite article includes a substrate including a first metallic material having a nominal composition, and a bond coat disposed on the substrate. The bond coat includes a second metallic material having the nominal composition of the first metallic material. A ceramic top coat is disposed on the bond coat.

Abstract: A method of reducing dye fade of a printed inkjet image comprises the step of depositing a layer of Al2O3 over the image. Also contemplated is an inkjet printer that contains a depositable source of Al2O3.

Abstract: Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate with sufficient pressure drop to more evenly distribute the gases prior to passing through the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.

Abstract: A chiral inorganic mesoporous material characterized by having a chiral twisted structure and being mesoporous; a process for producing the material; and a method of using the material. The process for inorganic mesoporous material production is a method in which one or more polymerizable inorganic monomers selected from the group consisting of polymerizable inorganic monomers and polymerizable inorganic monomers having a functional group capable of having a charge are polymerized in the presence of a solvent using as a template a self-assembly of a chiral surfactant such as an N-(higher alkanoyl)amino acid salt. Examples of the use of the inorganic mesoporous material include the separation of racemates and reaction fields for asymmetric syntheses.

Abstract: A method for diffusing titanium and nitride into a base material having a coating thereon using conventional surface treatments or coatings. The method generally includes the steps of providing a base material having a coating thereon; providing a salt bath which includes sodium dioxide and a salt selected from the group consisting of sodium cyanate and potassium cyanate; dispersing metallic titanium formed by electrolysis of a titanium compound in the bath; heating the salt bath to a temperature ranging from about 430° C. to about 670° C.; and soaking the base material in the salt bath for a time of from about 10 minutes to about 24 hours. In accordance with another aspect of the present invention, titanium and nitride may be diffused into a base material without a coating. The treated base material may further be treated with conventional surface treatments or coatings.

Abstract: A substrate is placed and heated in a process chamber. A gas of a pentadienyl compound of ruthenium, such as 2,4-dimethylpentadienyl ethylcyclopentadienyl ruthenium, and oxygen gas are supplied into the process chamber. These gases react with each other on the substrate thus heated, and a ruthenium film is thereby formed on the substrate.

Abstract: System and method for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the vaporizer, vaporizing the precursor in the vaporizer and supplying the vaporized precursor to a reaction chamber in fluid communication with the vaporizer, and shutting down the vaporizer and the reaction chamber after a period of time. The method can also include conducting maintenance of the injector at the vaporizer by using a vapor solvent rinse.

Abstract: An alkoxide compound of formula (I) suitable as a material for thin film formation used in thin film formation involving vaporization of a material such as CVD, a material for thin film formation including the alkoxide compound, and a process for thin film formation using the material. The process includes vaporizing the material for thin film formation, introducing the resulting vapor containing the alkoxide compound, onto a substrate, and causing the vapor to decompose and/or chemically react to form a thin film on the substrate. wherein one of R1 and R2 represents an alkyl group having 1-4 carbon atoms, the other representing a hydrogen atom or an alkyl group having 1-4 carbon atoms; R3 and R4 each represent an alkyl group having 1-4 carbon atoms; A represents an alkanediyl group having 1-8 carbon atoms; M represents a silicon atom or a hafnium atom; and n represents 4.

Abstract: Thermal processing system and method for forming an oxide layer on substrates. The thermal processing system has a gas injector with first and second fluid lumens confining first and second process gases, such an molecular hydrogen and molecular oxygen, from each other and another fluid lumen that receives the process gases from the first and second fluid lumens. The first and second process gases combine and react in this fluid lumen to form a reaction product. The reaction product is injected from this fluid lumen into a process chamber of the thermal processing system, where substrates are exposed to the reaction product resulting in formation of an oxide layer.

Abstract: A member having high non-electrostatic properties and high hydrophilicity and preventing an adhesion of contaminants, a surface-treating process and an apparatus for the surface-treating process are provided. A surface-treatment apparatus comprises a water vapor-generating unit 1, a superheating unit 5 for superheating a water vapor to generate a superheated water vapor, and a processing unit 11 for spraying the superheated water vapor to a member 14 to be treated (a ceramic, a metal) or for exposing the member to the superheated water vapor. Treating the untreated member with a superheated water vapor having a temperature 300 to 1000° C., hydrophilicity and antistatic properties are imparted to the member. The untreated member may be a member (a window member) contacting with a processing space in a vapor phase surface process apparatus (e.g., a chamber) for the surface process of a substrate by a vapor phase method such as a PVD, a CVD, or a dry etching.

Abstract: The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.

Abstract: A method of thermal stress compensation includes providing a substrate. A first film is then formed on the substrate. Thereafter, a second film is also formed on the substrate. The second film has a negative coefficient of thermal expansion.