Abstract: A disclosed film deposition apparatus includes a susceptor having in one surface a substrate receiving portion provided rotatably in a chamber; a heating unit including plural independently controllable heating portions, thereby heating the susceptor; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

Abstract: Films for optical use, articles containing such films, methods for making such films, and systems that utilize such films, are disclosed.

Abstract: Techniques for vaporizing and handling a vaporized metallic element or metallic element salt with a heated inert carrier gas for further processing. The vaporized metallic element or salt is carried by an inert carrier gas heated to the same temperature as the vaporizing temperature to a heated processing chamber. The metal or salt vapor may be ionized (and implanted) or deposited on substrates. Apparatus for accomplishing these techniques, which include carrier gas heating chambers and heated processing chambers are also provided.

Abstract: Atomic-Layer deposition systems and methods provide a variety of electronic products. In an embodiment, a method uses an atomic-layer deposition system that includes an outer chamber, a substrate holder, and a gas-distribution fixture that engages or cooperates with the substrate holder to form an inner chamber within the outer chamber. The inner chamber has a smaller volume than the outer chamber, which leads to less time to fill and purge during cycle times for deposition of materials.

Abstract: The invention relates to an electronic device, having a front face 8 and a rear face 8?, fitted with at least one discrete integrated component, comprising: a) the active face 10 of the component appearing to the side of the front face 8; b) coating material 3, present at least laterally relative to the component, ensuring the so-called component is held in the device; and c) an insulating buffer layer 6, absent from the active face 10 of the component, separating the coating material 3 from this component 4.

Abstract: A reactor and method for performing chemical vapor deposition are disclosed. A chemical vapor deposition reactor can have a cylindrical chamber that comprises a cylindrical lid support and an annular gas distribution plate. Said chamber can be configured to have a horizontal laminar flow of at least one gas stream in the radial direction and a vertical downward flow of another gas stream over wafers. A large capacity of a CVD reactor with simple structures, easy maintenance and low consumption of reactants can be achieved. High uniformity, repeatability, reproducibility and consistency of depositing layers on wafers can be obtained.

Abstract: Methods for manufacturing porous nuclear fuel elements for use in advanced high temperature gas-cooled nuclear reactors (HTGR's). Advanced uranium bi-carbide, uranium tri-carbide and uranium carbonitride nuclear fuels can be used. These fuels have high melting temperatures, high thermal conductivity, and high resistance to erosion by hot hydrogen gas. Tri-carbide fuels, such as (U,Zr,Nb)C, can be fabricated using chemical vapor infiltration (CVI) to simultaneously deposit each of the three separate carbides, e.g., UC, ZrC, and NbC in a single CVI step. By using CVI, a thin coating of nuclear fuel may be deposited inside of a highly porous skeletal structure made, for example, of reticulated vitreous carbon foam.

Abstract: Disclosed is AA? graphite with a new stacking feature of graphene, and a fabrication method thereof. Graphene is stacked in the sequence of AA? where alternate graphene layers exhibiting the AA? stacking are translated by a half hexagon (1.23 ?). AA? graphite has an interplanar spacing of about 3.44 ? larger than that of the conventional AB stacked graphite (3.35 ?) that has been known as the only crystal of pure graphite. This may allow the AA? stacked graphite to have unique physical and chemical characteristics.

Abstract: Methods and apparatuses for selective epitaxial formation of films separately inject reactive species into a CVD chamber. The methods are particularly useful for selective deposition using volatile combinations of precursors and etchants. Formation processes include simultaneous supply of precursors and etchants for selective deposition, or sequential supply for cyclical blanket deposition and selective etching. In either case, precursors and etchants are provided along separate flow paths that intersect in the relatively open reaction space, rather than in more confined upstream locations.

Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.

Abstract: Methods for compensating for a thermal profile in a substrate heating process are provided herein. In some embodiments, a method of processing a substrate includes determining an initial thermal profile of a substrate that would result from subjecting the substrate to a process; determining a compensatory thermal profile based upon the initial thermal profile and a desired thermal profile; imposing the compensatory thermal profile on the substrate prior to performing the process on the substrate; and performing the process to create the desired thermal profile on the substrate. The initial substrate thermal profile can also be compensated for by adjusting a local mass heated per unit area, a local heat capacity per unit area, or an absorptivity or reflectivity of a component proximate the substrate prior to performing the process. Heat provided by an edge ring to the substrate may be controlled prior to or during the substrate heating process.

Abstract: A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.

Abstract: Preventing a chemical vapor deposition (CVD) chamber from particle contamination in which a higher low-frequency radio frequency (LFRF) power and longer process time are provided to vacate the chamber and perform a pre-heat process. Following that, a pre-oxide layer is formed on the chamber wall, while a high-frequency radio frequency bias is provided to the chamber. The high-power LFRF is continuously provided to the chamber to sustain the temperature of the chamber, and then a main oxide layer deposition process is performed. The method is able to form an oxide layer of better quality on a CVD chamber wall, so as to solve the particle problem in the prior art. Therefore, yield is improved and the maintenance cost is reduced.

Abstract: Non-production wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. They may have thicknesses of 0.725 to 2 mm and be roughened on both sides. Nitride may be grown on the non-production wafers to a thickness of over 2 ?m without flaking. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. Both sides are ground to introduce sub-surface damage and then oxidized and etch cleaned. An all-silicon hot zone of a thermal furnace, for example, depositing a nitride layer, may include a silicon support tower placed within a silicon liner and supporting the polysilicon non-production wafers with silicon injector tube providing processing gas within the liner.

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

Abstract: There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.

Abstract: Methods and systems for depositing a film on a substrate are disclosed. In one embodiment, a method includes converting a non-gaseous precursor into vapor phase. Converting the precursor includes: forming a fluidized bed by flowing gas at a sufficiently high flow rate to suspend and stir a plurality of solid particles, and converting the phase of the non-gaseous precursor into vapor phase in the fluidized bed. The method also includes transferring the precursor in vapor phase through a passage; and performing deposition on one or more substrates with the transferred precursor in vapor phase.

Abstract: A method of preparing an ultra sharp tip, in particular a single atom tip, is provided, comprising providing a tip having a shank, an apex, and a coating covering the shank and the apex; locally removing the coating from the apex by field evaporation; and partially or fully restoring the coating at the apex.

Abstract: Method of manufacturing carbon-carbon composite brake disc comprising a dense reusable core. Preferably, the reusable core has a density of 1.8-2.05 g/cc. The method includes: forming a dense carbon-carbon composite core; positioning the dense core in a location within a carbon-carbon composite brake disc; and fixing the dense carbon-carbon composite core in place in its location within the carbon-carbon composite brake disc. It is economically advantageous to recover the dense core from a worn brake disc prior to positioning it in the brake disc. Also, an annular carbon-carbon composite brake disc made up of a friction surface containing 15-75 weight-% carbon-containing fibers and 25-85 weight-% resin binder and a dense carbon-carbon composite core comprising 40-75 weight-% carbon-containing fibers and 25-60 weight-% resin binder.

Abstract: Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor, and at least one substrate disposed in the reactor, are provided. A metal containing precursor with at least one ?-diketiminate ligand is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Metal is deposited onto the substrate through a deposition process to form a thin film on the substrate.

Abstract: Disclosed is a barrier laminate comprising an organic layer, a protection layer and an inorganic layer in that order, wherein the organic layer comprises a main component other than a polyparaxylylene, and the protection layer comprises a polyparaxylylene as a main component.

Abstract: The invention relates to a method for coating one or more substrates with a layer the components of which are passed into a process chamber (7) in the form or at least two gases by means of a gas inlet element. The gases are introduced into respective chambers (1, 2) of the gas inlet element that arranged one on top of the other and enter the process chamber (7) through gas outlet openings (3, 4) leading to the process chamber (7). The aim of the invention is to improve the aforementioned method or aforementioned device for producing homogeneous layers. For this purpose, each of the two chambers is subdivided into two compartments (1a, 1b; 2a, 2b) each which are arranged one on top of the other to be substantially congruent.

Abstract: A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion.

Abstract: The present invention relates to a process for producing CuInSe2 and CuIn1XGa,Se2 thin films used as an absorption layer for a solar cell such that they have a structure near to chemical equivalence ratio. The present invention provides a process for producing a thin film for a solar cell, comprising forming an InSe thin film on a substrate by Metal Organic Chemical Vapor Deposition using a [Me2In-(?SeMe)]2 precursor; forming a Cu2Se thin film on the InSe thin film by Metal Organic Chemical Vapor Deposition using a (hfac)Cu(DMB) precursor, and forming a CuInSe2 thin film on the Cu2Se thin film by Metal Organic Chemical Vapor Deposition using a [Me2In-(?SeMe)]2 precursor. Further, the process may further comprise forming a CuIn1,Ga,Se2 thin film on the CuInSe2 thin film by Metal Organic Chemical Vapor Deposition using a [Me2Ga-(?SeMe)]2 precursor.

Abstract: Methods for recycling a low permeability gas such as krypton in the consolidation process of optical fiber manufacturing. The low permeability gas is sent to a purification unit or plant before being reutilized in the consolidation process. The low permeability gas can be used to produce holes or voids in a cladding region of an optical fiber preform. Upon drawing the optical preform into an optical fiber, the voids become elongated in the direction of draw.

Abstract: A wafer W is arranged on a susceptor 22 in a chamber 21, and a metal film is formed on a surface of the wafer W by continuously supplying the chamber 21 with a metal compound gas from a metal compound gas supply unit 51 and a reducing organic compound gas from a reducing organic compound gas supply unit 52 of a gas supply mechanism 50.

Abstract: A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

Abstract: A gas distribution system for a reactor having at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece deposition surface such that at least a lower one of the gas source orifice arrays is located between a higher one of the gas source orifice arrays and the work-piece deposition surface. Orifices in the higher one of the gas source orifice arrays may spaced an average of 0.2-0.8 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface, while orifices in the lower one of the gas source orifice arrays may be spaced an average of 0.1-0.4 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface.

Abstract: A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula (I), wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

Abstract: A method of manufacturing a thin-film magnetic head, the thin-film magnetic head including a recording head, includes the steps of: forming a first magnetic layer; forming a recording gap layer on the first magnetic layer; forming a second magnetic layer on the recording gap layer; and forming a thin-film coil. The recording gap layer is formed by stacking a plurality of insulating films formed by chemical vapor deposition.

Abstract: In one embodiment, a rotary device includes a multiwall nanotube that extends substantially perpendicularly from a substrate. A rotor may be coupled to an outer wall of the multiwall nanotube, be spaced apart from the substrate, and be free to rotate around an elongate axis of the multiwall nanotube.

Abstract: A film forming method comprising: supplying a reactive gas comprising a compound including a metal atom between facing electrodes; arranging a substrate between the electrodes; making the reactive gas in a plasma state by applying a voltage between the electrodes under atmospheric pressure or under a pressure in a vicinity of the atmospheric pressure and discharging; and forming a metal film on a surface of the substrate by supplying a reducing gas having a reducing property into a plasma atmosphere in which the reactive gas in the plasma state exists.

Abstract: A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.

Abstract: A method of manufacturing commercial grade, carbon-coated or core-shell type metal powders with highly thermostable characteristics utilizes high-temperature carbonyl decomposition in the presence of carbon monoxide under normal atmospheric conditions.

Abstract: The invention relates to methods and apparatus in which precursor vapor is guided along at least one in-feed line into a reaction chamber of a deposition reactor, and material is deposited on surfaces of a batch of vertically placed substrates by establishing a vertical flow of precursor vapor in the reaction chamber and having it enter in a vertical direction in between said vertically placed substrates.

Abstract: A dielectric layer having atomic layer deposited zirconium aluminum oxide and a method of fabricating such a dielectric layer may produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The zirconium aluminum oxide may be formed in an atomic layer deposition process that includes pulsing a zirconium-containing precursor onto a substrate and pulsing an aluminum-containing precursor.

Abstract: The present invention relates to a thermal processing method includes a first thermal processing step that carries out thermal processing steps using a plurality of first substrates, wherein thin films are formed on surfaces of the plurality of first substrates by means of less consumption of the process gas than on surfaces of production substrates. Then, a second thermal processing step carries out thermal processing steps by using a plurality of second substrates, wherein thin films are formed on surfaces of the plurality of second substrates by means of more consumption of the process gas than on the surfaces of the plurality of first substrates, and wherein heating units are respectively adjusted to respective temperature set values set during the previous step.

Abstract: Highly volatile MOCVD (Metal-Organic Chemical Vapor Deposition) precursors are disclosed comprising a complex between a fluoroalkoxide ligand and one or more alkali, alkaline earth, lanthanoids or yttrium metals and one or more donor molecules. In one example, the fluoroalkoxide ligand is perfluoro-tert-butoxide and the complex is a heterobimetallic complex. These MOCVD precursors are highly volatile, non-oligomeric, non-pyrophoric and can be synthesized with high yields. They are ideally suited for MOCVD applications because of their ability to vaporize at low temperatures and at atmospheric pressure thus enabling the deposition of a more uniform and homogeneous metal coating of known stoichiometry on to a substrate.

Abstract: This invention discloses a method of making an oxygen scavenging particle comprised of an activating component and an oxidizable component wherein one component is deposited upon the other component from a vapour phase and is particularly useful when the activating component is a protic solvent hydrolysable halogen compound and the oxygen scavenging particle is a reduced metal.

Abstract: In forming a TiN film on a base material (10) by a MOCVD method, a space between a showerhead (3) and a trapping member (5) is heated by a heater (2) up to a temperature at which TDMAT is thermally decomposed, or higher. Next, source gas containing TDMAT, and so on are emitted from the showerhead (3) into a chamber (1). As a result, the TDMAT emitted into the chamber (1) is thermally decomposed into TiN, carbon, and hydrocarbon by the heater (2) in the space between the showerhead (3) and the trapping member (5). Then, the TiN, carbon, and hydrocarbon move toward the base material (10). Then, the carbon and hydrocarbon are trapped by the trapping member (5). On the other hand, the TiN passes through the trapping member (5) without being trapped to reach the base material (10). As a result, a TiN film containing neither carbon nor hydrocarbon grows on a surface of the base material (10).

Abstract: A process for the preparation of active surfaces terminated by a desired form of organic, organic-inorganic, or inorganic nature comprising growing with a gas phase deposition technique preferable the ALCVD (atomic layer chemical vapour deposition) technique. As an example, trimethylaluminium (TMA), hydroquinone (Hq) and phloroglucinol (Phl) have been used as precursors to fabricate surfaces that are terminated by hydroxyl groups attached to aromates. Further types of active surfaces are described. These surfaces can be used to produce surfaces: suitable for adhesion through the use of glue or other adhesive, providing receptors for biological molecules, making the surfaces biocompatible, of catalytically active materials, where upon subsequent types of chemical reactions can take place, with different degrees of wetting properties.

Abstract: A process for producing bismuth-containing oxide thin films by Atomic Layer Deposition, including using an organic bismuth compound having at least one silylamido ligand as a source material for the bismuth oxide. Bismuth-containing oxide thin films produced by the preferred embodiments can be used, for example, as ferroelectric or dielectric material in integrated circuits and/or as superconductor materials.

Abstract: A substrate support system comprises a substrate holder for supporting a substrate. The substrate holder comprises a central portion sized and shaped to extend beneath most or all of a substrate supported on the substrate holder. The central portion has one or more recesses defining thinned portions of the central portion. The one or more thinned portions may comprise at least about 10% of an upper or lower surface of the central portion. The central portion is formed of a porous material, such as a material having a porosity between about 10-40%, configured to allow gas flow therethrough.

Abstract: The diameter of carbon nanotubes grown by chemical vapor deposition is controlled independent of the catalyst size by controlling the residence time of reactive gases in the reactor.

Abstract: A flash evaporation apparatus includes: a reaction chamber; a drum to support a continuously conveyed film; a plurality of evaporators; monomer tanks which are connected to the respective evaporators and hold different kinds of liquid monomers therein; liquid feeding pumps for feeding the monomers from the monomer tanks to the evaporators; a merging section for merging vaporized monomers discharged from the evaporators; a mixer connected to the merging section; and a nozzle connected to the mixer. Accordingly, the flash evaporation apparatus can vaporize different kinds of monomers using separate evaporators and mix the monomers.

Abstract: A processing device, comprising a processing container, a shower head structure provided at the ceiling part of the processing container and having a plurality of gas jetting holes for jetting specified processing gas into the processing container formed in the gas jetting surface thereof facing the inside of the processing container, and a placing stand disposed in the processing container so as to face the shower head structure, wherein a head distance between the gas jetting surface and the placing stand and the blowing speed of gas from the gas jetting holes are set within the range surrounded by connecting, in a square shape with straight lines in a plane coordinate system having the head distance plotted on an abscissa and the gas jetting speed plotted on a coordinate, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 32 m/sec, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 67 m/sec, a point wher

Abstract: A film forming apparatus comprises a processing chamber for holding therein a to-be-processed substrate, a first gas supplying means for supplying into the processing chamber a first vapor source including a metal alkoxide having a tertiary butoxyl group as a ligand, and a second gas supplying means for supplying into the processing chamber a second vapor source including a silicon alkoxide source, wherein the first gas supplying means and the second gas supplying means are connected to a pre-reaction means for causing pre-reactions of the first vapor source and the second vapor source, and the film forming apparatus is configured to supply the first vapor source and the second vapor source after the pre-reactions into the processing chamber.

Abstract: The present invention relates to an optical interconnection structure and a method for manufacturing the same. The present invention provides an optical interconnection structure comprising: a substrate on which a hole penetrating through a predetermined region is formed; and an optical guide member fixed to the inside of the hole of the substrate, wherein the optical guide member and the substrate are fixed by metal oxide. The present invention provides the optical interconnection structure that can facilitate the optical interconnection between the active optoelectronic devices that transmit/receive the optical signals and the optical waveguide, making it possible to enhance heat dissipation efficiency and improve operation speed.

Abstract: This relates to an improvement to the process of aluminization or activated cementation in which a donor cement containing the aluminium is attacked at high temperature and in a neutral or reducing atmosphere by a gaseous ammonium halide to form a gaseous aluminium halide which decomposes on contact with a nickel-based substrate depositing aluminium metal thereon. According to the invention the aluminium halide is at least partly replaced by a zirconium halide leading to the inclusion of zirconium in the deposit. Improvement in the protection of the hot parts of aircraft engines made of nickel-based superalloy. No figure is to be published.