Abstract: The invention relates to the deposition of thin silver films on various substrates, particularly superconductor substrates. The method consists of CVD deposition of silver on a substrate with the aid of a silver precursor solution. The silver precursor is an RCO2Ag silver carboxylate, wherein R is a linear or branched radical having 3-7 carbon atoms, used in the form of an organic liquid solution. The precursor concentration of the solution ranges from 0.01 to 0.6 mol/l. The organic liquid comprises an amine and/or a nitrile and, optionally, a solvent whose evaporation temperature is lower than the decomposition temperature of the precursor. The percentage by volume of the amine and/or nitrile in the organic liquid is more than 0.1%.

Abstract: Turbine components with different types of coatings on different parts thereof are described. The coatings are chosen such that they are especially adapted to the thermal and corrosive conditions being present on the parts of the component during use. A method to coat a turbine component is also described.

Abstract: A silicon carbide substrate has a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz is effective to mount and operate electronic components. The silicon carbide substrate is heated at 2000° C. or more to be reduced to the high-frequency loss equal to 2.0 dB/mm or less at 20 GHz. Moreover, manufacturing the silicon carbide substrate by CVD without flowing nitrogen into a heater enables the high-frequency loss to be reduced to 2.0 dB/mm or less.

Abstract: Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 ?, such as about 15 ?. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.

Abstract: The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: XIrYA, wherein A is equal to 1 or 2 and i) when A is 1, X is a dienyl ligand and Y is a diene ligand; ii) when A is 2, a) X is a dienyl ligand and Y is selected from CO and an ethylene ligand, b) X is a ligand selected from H, alkyl, alkylamides, alkoxides, alkylsilyls, alkylsilylamides, alkylamino, and fluoroalkyl and each Y is a diene ligand, and c) X is a dienyl ligand and Y is a diene ligand; reacting the at least one iridium containing precursor in the reactor at a temperature equal to or greater than 100° C.; and depositing an iridium containing film formed from the reaction of the at least one iridium containing precursor onto the at least one substrate.

Abstract: This invention relates to a vapor or liquid phase reagent dispensing apparatus that may be used for dispensing vapor or liquid phase reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices. This invention reduces the number of container designs required to support different applications. A standard two port container without a tube can be converted to a container capable of being used in applications which require a tube (i.e., bubbler tube for gas delivery or a dip tube for liquid delivery), by inserting a gasket/tube adapter between one of the ports and the corresponding valve in accordance with this invention.

Abstract: A method for making zinc aluminate nano-material, the method comprises the following steps. Firstly, providing a growing substrate and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of reacting materials into the reaction room, and the reacting materials comprising zinc and aluminum. Thirdly, introducing an oxygen-containing gas into the reaction room. Lastly, heating the reaction room to a temperature of 660˜1100° C.

Abstract: The present invention provides improved synthetic polymer hydrogel permeation layers for use on active electronic matrix devices for biological assays. The present invention includes methods for forming a permeation layer on an array of microelectrodes including the steps of attaching a linker to the surface of the array and providing a polymerization solution that includes a porogen. The surface of the array is then contacted with the polymerization solution and the polymerization solution is then polymerized on the surface of the array to form a permeation layer that is attached o the surface of the array through the linker. The porogen is then removed from the permeation layer, thereby creating void spaces in the permeation layer.

Abstract: The present invention relates to a metal cutting tool insert with a coating comprising a metal oxide multilayer, which exhibits especially high resistance to plastic deformation as well as excellent resistance to flank and crater wear and high resistance to flaking, particular when used for machining of low carbon steel and stainless steel. The invention also relates to a method of making such a cutting tool insert.

Abstract: The present invention relates to vapor-deposition materials comprising Ta2Ox, where x=4.81 to 4.88, to processes for the preparation of the vapor-deposition materials, and to the use thereof for the production of layers of high refractive index.

Abstract: An apparatus and related method for distributing process gas in a vapor deposition system is described. The gas distribution system includes a vertically movable piston within its plenum, and the movement of the piston controls the flow rate of process gas through the vapor distribution plate of the gas distribution system. The piston can be used to accommodate changes in processing parameters that affect flow characteristics and to create edge-enhanced, uniform, and center-enhanced profiles of deposited material on a substrate without the need to replace the vapor distribution plate.

Abstract: Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium.

Abstract: In one aspect, a method of forming a silicon layer on a substrate is provided, including the steps providing a substrate; and introducing hydrogen and silane into a chamber containing the substrate such that a layer of silicon is deposited on the substrate; wherein the silane is less than about 99.999% pure. Numerous other aspects are provided.

Abstract: The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. The present invention is an organoruthenium compound for use in chemical vapor deposition which does not require the coexistence of oxygen during the thin film formation, and moreover, is liquid at ordinary temperature, thereby having good handleability and recyclability. wherein the substituents, R1 to R6, of the arene group are each hydrogen or an alkyl group, and the total number of carbons of R1 to R6 (R1+R2+R3+R4+R5+R6) is 6 or less.

Abstract: A novel tantalum compound, a method for producing the novel tantalum compound, and a method for stably forming a tantalum-containing thin film which contains the desired element. The tantalum compound enables one to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element.

Abstract: An arbitrary three-dimensional shaped structure which is integrally formed with only carbon nanotubes having desired physical properties and electrical properties, and anisotropy, and a method for producing the same are disclosed. The carbon nanotube structure is constituted of a carbon nanotube aggregate comprising plural carbon nanotubes oriented in the same direction, wherein the carbon nanotube has weight density of 0.1 g/cm3 or more, the structure comprises a first part contacting a base, a second part separated from the base, and a curved third part which connects the first part and the second part, and orientation axes of at least a part of carbon nanotubes in the first part, the second part and the third part are continued.

Abstract: In a vacuum chamber 42 comprising a film forming chamber 44 and a catalyst chamber 46 including a catalyst source 48 located opposed to a substrate S, the film forming chamber 44 is connected to the catalyst chamber 46 through an opening 47, the catalyst source being displace at a position satisfying ???, where ? is an angle included between the shortest linear line connecting the periphery of a substrate on the substrate supporting stage with the periphery of the opening and the substrate and where ? is an angle included between the shortest linear line connecting the periphery of the substrate with the edge of the catalyst source and the substrate. By using such a film forming apparatus, a radical produced at the catalyst source can be prevented from being deactivated so that the reaction between a source gas and the radical will be efficiently performed to form the desired film.

Abstract: Embodiments of the invention provide an apparatus and a method for generating a gaseous chemical precursor that may be used in a vapor deposition processing system. In one embodiment, the apparatus contains a valve manifold assembly, which includes a valve assembly body having at least one embedded electric heater, an inlet channel passing through the valve assembly body, a first pneumatic valve and a first manual valve coupled to the valve assembly body and positioned to control fluid flow within the inlet channel, an outlet channel passing through the valve assembly body, and a second pneumatic valve and a second manual valve coupled to the valve assembly body and positioned to control fluid flow within the outlet channel. The valve manifold assembly further contains a bypass channel connected to and between the inlet and outlet channels, and containing a bypass valve positioned to control fluid flow within the bypass channel.

Abstract: A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 4000 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.

Abstract: A method and system for treating a substrate is described. For example, the method and system may be used to deposit a thin film on a substrate using a vapor deposition process. The processing system comprises a gas distribution device for controlling the temperature of a process gas, such as one or more constituents of a film forming composition. The gas distribution device comprises one or more porous gas distribution elements configured to be temperature controlled and distribute a process gas flowing through the one or more porous gas distribution elements. The gas distribution device may be configured to pyrolize the process gas.

Abstract: A coated article includes a substrate and a substantially pure metal layer coated thereon. The substantially pure metal layer is configured to enhance the strength of the underlying substrate. A method is also disclosed for making a coated article by providing a substrate and coating a substantially pure metal layer thereon.

Abstract: A method for making an oxidation resistant article, including (a) depositing a layer of a Pt group metal on a substrate to form a platinized substrate; and (b) depositing on the platinized substrate layer of Pt group metal a layer of a reactive element selected from the group consisting of Hf, Y, La, Ce and Zr and combinations thereof to form a surface modified region thereon, wherein the surface modified region includes the Pt-group metal, Ni, Al and the reactive element in relative concentration to provide a ?-Ni+??-Ni3Al phase constitution.

Abstract: The invention is a method of vacuum evaporation of a multi-element sulfur bearing thin film compositions onto a substrate. The method comprises targeting a source of gas or vapour sulfur species at one or more source materials that make up at least part of the thin film composition during evaporation of the source materials. The sulfur species is heated to a high temperature as it reaches the one or more source materials and there is a chemical interaction of the sulfur species with evaporant from the one or more source materials during deposition of said thin film composition. The method is particularly useful for the deposition of phosphors for full colour ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.

Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

Abstract: The present disclosure relates to a method for producing a coating on a substrate. The method may include depositing metal atoms on one or more surfaces of a substrate, subjecting the metal atoms to a reactive gas, and producing a coating layer of a metal compound, wherein the metal compound may include nanocrystals of a transition metal compound in a ceramic matrix, wherein the transition metal compound may be selected from the group consisting of metal nitrides, metal carbides, metal silicides and combinations thereof. The reactive gas may be supplied from a precursor containing silicon, carbon and hydrogen, wherein the precursor may have a MW of greater than or equal to 100.

Abstract: The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.

Abstract: A cutting tool with a hard coating layer coating a surface of a substrate formed of a hard sintered body, the hard coating layer being harder than the substrate. A polishing is performed on a cutting edge part ranging from a rake face side on a surface of the hard coating layer to a flank face side with a crossing ridge interposed therebetween. The polishing is performed so that a crack is present in a polished surface, and a depth of an adjacent region of the crack increases gradually with decreasing distance to the crack. This enables to provide the cutting tool having an excellent wear resistance and having an improvement in the chipping resistance of the cutting edge.

Abstract: Layer transfer approaches are described to take advantage of large area, thin inorganic foils formed onto a porous release layer. In particular, since the inorganic foils can be formed from ceramics and/or crystalline materials that do not bend a large amount, approaches are described to provide for gradual pulling along an edge to separate the foil from a holding surface along a curved surface designed to not excessively bend the foil such that the foil is not substantially damaged in the transfer process. Apparatuses are described to perform the transfer with a rocking motion or with a rotating cylindrical surface. Furthermore, stabilization of porous release layers can improve the qualities of resulting inorganic foils formed on the release layer. In particular, flame treatments can provide improved release layer properties, and the deposition of an interpenetrating stabilization composition can be deposited using CVD to stabilize a porous layer.

Abstract: A system and method for mixing a plurality of gases for an atomic layer deposition (ALD) reactor. The mixer is configured to mix the plurality of gases while minimizing the potential for re-circulation within the mixer. The mixer is further configured to maintain the flow velocity of the plurality of gases as the gases pass through the mixer.

Abstract: A carbon nanohorn carried material for producing a carbon nanotube by a chemical vapor deposition (CVD) method, including a catalytic metal or a compound thereof contained inside carbon nanohorns or supported on exterior walls of the carbon nanohorns is provided. A carbon nanotube is produced by a CVD reaction using the carbon nanohorn carried material. A novel technical means for producing a carbon nanotube which does not use any noncarbon type carrier, can easily collect and purify the carbon nanotube and can control the length of the carbon nanotube can be provided.

Abstract: A fluidic device includes a porous substrate, a non-wetting region extending through a first portion of the porous substrate from a first side of the substrate, in which the non-wetting region is impermeable to fluid transport, and a wetting region extending through a second portion of the porous substrate from a second side of the substrate, in which the wetting region is permeable to fluid transport.

Abstract: A film-deposition apparatus and a film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method are provided. The film-deposition apparatus for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition apparatus comprises: a process vessel capable of being evacuated; a table on which the object to be processed can be placed, the table being disposed in the process vessel; and a source-gas supply part connected to the process vessel, the source-gas supply part being configured to supply, into the process vessel, a source gas including an organic metal material containing manganese or a metal complex material containing manganese.

Abstract: A method of growing carbon nanomaterials such as carbon ?anotubes, carbon nanofibers, and carbon whiskers on a variety of substrates is provided which includes exposing at least a portion of the substrate surface to an oxidizing gas, followed by forming catalysts on the substrate surface, either by immersing the carbon substrate in a catalyst solution or by electrodeposition. The treated substrate is then subjected to chemical vapor deposition to facilitate the growth of carbon nanomaterials on the surface thereof. The carbon nanomaterials may be grown on a variety of substrates including carbon substrates, graphite, metal, metal alloys, intermetallic compounds, glass, fiberglass, and ceramic substrates.

Abstract: The invention relates to a process for fabricating a hydrogenated amorphous silicon carbide film having through-pores, which comprises: a) the formation on a substrate of a film consisting of an amorphous hydrogenated silicon carbide matrix in which silicon oxide through-nanowires are dispersed; and then b) the selective destruction by a chemical agent of the silicon oxide nanowires present in the film formed at step a). Applications: microelectronics and micro-technology, in all fabrication processes that involve the degradation of a sacrificial material by diffusion of a chemical agent through a film permeable to this agent for the production of air gaps, in particular the fabrication of air-gap interconnects for integrated circuits.

Abstract: The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses.

Abstract: A method is described that can be used in electrodes for electrochemical devices and includes disposing a precious metal on a top surface of a corrosion-resistant metal substrate. The precious metal can be thermally sprayed onto the surface of the corrosion-resistant metal substrate to produce multiple metal splats. The thermal spraying can be based on a salt solution or on a metal particle suspension. A separate bonding process can be used after the metal splats are deposited to enhance the adhesion of the metal splats to the corrosion-resistant metal substrate. The surface area associated with the splats of the precious metal is less than the surface area associated with the top surface of the corrosion-resistant metal substrate. The thermal spraying rate can be controlled to achieve a desired ratio of the surface area of the metal splats to the surface area of the corrosion-resistant metal substrate.

Abstract: A substrate processing device comprises a reaction vessel 11 forming a space receiving a substrate 1 and adapted to have a plurality of reaction gases supplied thereto to perform desired processing of the substrate, an exhaust port 16 formed in the reaction vessel 11 for exhausting the reaction vessel 11, and a gas supply system 70A, 70B for supplying at least a plurality of reaction gases into the reaction vessel 11, the gas supply system 70A, 70B including a cleaning gas supply unit for supplying a cleaning gas to perform desired processing of the substrate 1 to thereby remove adherents in the reaction vessel 11, and a post-processing gas supply unit for supplying a post-processing gas capable of removing the elements contained in the cleaning gas remaining in the reaction vessel 11 after the adherents have been removed by supplying the cleaning gas, the post-processing gas containing all of the reaction gases used in performing desired processing of the substrate.

Abstract: A process for producing a semiconductor device, in which in the formation of a boron doped silicon film from, for example, monosilane and boron trichloride by vacuum CVD technique, there can be produced a film excelling in inter-batch homogeneity with respect to the growth rate and concentration of a dopant element, such as boron. The process includes the step of performing the first purge through conducting at least once of while a substrate after treatment is housed in a reaction furnace, vacuuming of the reaction furnace and inert gas supply thereto and the steps of performing the second purge through conducting at least once of after carrying of the substrate after treatment out of the reaction furnace, prior to carrying of a substrate to be next treated into the reaction furnace and while at least no product substrate is housed in the reaction furnace, vacuuming of the reaction furnace and inert gas supply thereto.

Abstract: The disclosure is directed to a tube. The tube includes a silicone elastomer and at least one reinforcement member substantially embedded within the silicone elastomer. The disclosure is also directed to a tube including a first layer and a second layer adjacent the first layer. The first layer includes a fluoropolymer liner and the second layer includes a silicone elastomer and at least one reinforcement member substantially embedded within the silicone elastomer. This disclosure is further directed to a method for making the aforementioned tubes.

Abstract: Coated cemented carbide milling tool inserts are disclosed comprising a cemented carbide body and a coating. The cemented carbide body has a composition of about 7-15 wt % Co, cubic carbonitride phase and WC with a surface zone with a thickness of at least about 5 ?m which is binder phase enriched and essentially free of cubic carbonitride phase and a wear resistant coating comprising at least one layer of Al2O3 with a thickness of about 1-15 ?m.

Abstract: The present invention is related to an apparatus and a method for chemical vapor deposition (CVD) using a showerhead through which a reactive gas of at least one kind and a purge gas is injected over a substrate on which a film is growing. A plural number of reactive gas showerhead modules are laid on a purge gas showerhead module. Each reactive gas is injected from a bottom of the showerhead after flowing through the showerhead as separated, thereby preventing the reactive gases from causing homogeneous gas phase reactions and from generating unwanted particles at the inside of the showerhead. And purge gas is injected from the bottom surface of the showerhead by forming a protective curtain, thereby suppressing diffusion of the reactive gas injected backwardly.

Abstract: A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices.

Abstract: The invention relates to a method for producing layers on work pieces (30) in which at least one component for producing the layer is metered, wherein this component is located in liquid phase during the metering and is transformed at least partially into a different aggregate state in a subsequent processing step.

Abstract: A method and apparatus for performing ALD deposition of hafnium oxide on a substrate is provided. The apparatus includes a process chamber, a precursor delivery subsystem, an oxidizer delivery subsystem, a purge gas subsystem, a solvent flush subsystem, and optional solvent recovery and purification subsystems. The method includes pulsing precursor compounds into the process chamber in sequence. While one precursor is pulsed, purge gas is provided through the other precursor line. After pulsing, precursor lines are purged, and the chamber is evacuated and purged. A solvent flush step is employed to remove precursor deposits that build up in piping over time.

Abstract: This invention relates to organometallic precursor compounds represented by the formula (L)M(L?)2(NO) wherein M is a Group 6 metal, L is a substituted or unsubstituted anionic ligand and L? is the same or different and is a ? acceptor ligand, a process for producing the organometallic precursor compounds, and a method for producing a film, coating or powder from the organometallic precursor compounds.

Abstract: The use of an aerosol transport operation for producing a nanoparticle film or a nanocomposite film on a substrate, wherein the substrate is heated.

Abstract: A hard metal or cermet body has a 2 to 100 ?m thick first layer having a binder metal proportion of 2 to 25 mass % and up to 25 volume % of a nitride or carbonitride of one or more metals of Group IVa of the periodic system or up to 10 volume % of a carbide or carbonitride of V, Nb, Ta or Cr, balance WC, whereby the amount of nitride, carbonitride or carbide of the afore-mentioned metals amounts to at least 0.01 volume %. Under the first layer is a 2 to 40 ?m thick second layer with an enhanced nitrogen proportion relative to the first layer, is disposed. Thereunder is a transition zone with a thickness of 2 to 100 ?m in which the composition gradually changes to a homogeneous composition in the inner core of the hard metal or cermet body.

Abstract: A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers W is cleaned by discharging Cl2 gas as a cleaning gas from a shower head 10 into the chamber 1. During this cleaning, the temperature of each of the susceptor 2, the shower head 10, and the wall portion of the chamber 1 is independently controlled so that the temperature of the susceptor 2 is not lower than the decomposition start temperature of Cl2 gas and the temperature of the shower head 10 and the wall portion of the chamber 1 is not higher than the decomposition start temperature.

Abstract: This invention relates to organometallic precursor compounds represented by the formula (Cp(R?)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

Abstract: A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.