Abstract: Method and apparatus for depositing film on flexible (plastic/metal) foil and/or temperature sensitive substrates (101) by combustion chemical vapor deposition (C-CVD). A substrate (101) is held in place to provide physical and conductive thermal contact between the substrate (101) and a substrate holder (102). The substrate holder (102) is cooled using a cooling fluid and the substrate (101) and burner are moved relative to each other as C-CVD takes place. Heating of the substrate (101) during C-CVD is controlled and deterioration by heating is avoided. The foil or substrate (101) is suitable, in particular, for use in flat and flexible displays.

Abstract: A process for controlling fatigue debit when coating an article includes the steps of: cleaning at least one surface of an article including a structural material; depositing a bond coat material upon at least one cleaned surface of the article to form a bond coat layer substantially free of the structural material; depositing an oxidation resistant material in the presence of an activator upon the bond coat layer at a temperature range from about 1,775° F. (968° C.) to about 1,825° F. (996° C.) to form an additive layer substantially free of the structural material; and wherein the bond coat layer and the additive layer together form a thin film, oxidation resistant coating having a thickness of at least about 0.5 mils.

Abstract: In a film deposition apparatus, a turntable is disposed in a vacuum container and includes a substrate placement area in which a substrate is placed. A substrate heating unit is disposed to heat the substrate placed on the turntable. First and second reactive gas supplying units are disposed at mutually distant locations in a rotational direction of the turntable to respectively supply first and second reactive gases to first and second processing areas adjacent to the substrate placement area. A separation gas supplying unit is disposed to supply a separation gas to a separation area located between the first and second processing areas in the rotational direction. An exhaust port is arranged to exhaust the first and second reactive gases and the separation gas from the turntable. A temperature control part is arranged to heat or cool the vacuum container.

Abstract: A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65) extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.

Abstract: Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: wherein M comprises a metal chosen from Ti, Zr, and Hf; R and R1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R2 is an alkyl group comprising from 1 to 10 carbon atoms; R3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms; R4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R2 and R4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.

Abstract: The embodiments of present invention provide method for imparting tone-controlled colors into colorless crystals such as gemstones or decorative objects by coating a atomically mixed thin film comprising of a color causing reagent and a toner material onto the surface of colorless gemstones or transparent crystals and subjecting them to a heat treatment to produce colors of desired shades in the crystals. The method employed is radiation-free, eco-friendly and avoid the use of any hazardous material. The method highlights that controlling the amount of toner material could easily control the shade of color induced by the colorant material. The coating of atomically mixed single film onto the surface of crystals results in reduction of diffusion time significantly at a reasonable temperature, to impart colors to crystals such as gemstones and colorless decorative objects.

Abstract: A film formation method, in a vertical batch CVD apparatus, is preset to repeat a cycle a plurality of times to laminate thin films formed by respective times. The cycle alternately includes an adsorption step of adsorbing a source gas onto a surface of the target substrates and a reaction step of causing a reactive gas to react with the adsorbed source gas. The adsorption step is arranged to make a plurality of times a supply sub-step of performing supply of the source gas to the process field with an intermediate sub-step of stopping supply of the source gas to the process field interposed therebetween, while maintaining a shut-off state of supply of the reactive gas. The reaction step is arranged to continuously perform supply of the reactive gas to the process field, while maintaining a shut-off state of supply of the source gas.

Abstract: A process for the coating of substrates comprising insertion of a substrate into a process oven, dehydration of the substrate, withdrawal of a metered amount of one or more chemicals from one or more chemical reservoirs, vaporizing the withdrawn chemicals in one or more vapor chambers, and transfer of the vaporized chemicals into a process oven, thereby reacting with the substrate. An apparatus for the coating of substrates comprising a process oven, a metered chemical withdrawal subsystem, and a vaporization subsystem.

Abstract: A Te precursor containing Te, a 15-group compound (for example, N) and/or a 14-group compound (for example, Si), a method of preparing the Te precursor, a Te-containing chalcogenide thin layer including the Te precursor, a method of preparing the thin layer; and a phase-change memory device. The Te precursor may be deposited at lower temperatures for forming a Te-containing chalcogenide thin layer doped with a 15-group compound (for example, N) and/or a 14-group compound (for example, Si). For example, the Te precursor may employ plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD) at lower deposition temperatures.

Abstract: A method for fabricating a composite gas separation module includes depositing a preactivated powder over a porous substrate; depositing a binder metal onto the preactivated powder; and depositing a dense gas-selective membrane to overlie the preactivated powder and binder metal, thereby forming the composite gas separation module. The preactivated powder can be, for example, selected from the group consisting of preactivated metal powders, preactivated metal oxide powders, preactivated ceramic powders, preactivated zeolite powders, and combinations thereof. The preactivated powder can be deposited, for example, from a slurry such as a water-based slurry. In some embodiments, the dense gas-selective membrane is a dense hydrogen-selective membrane.

Abstract: Provided are scratch-, wear- and corrosion-resistant coatings for metal substrates, including orthopedic implants and other metal-containing constructs, as well as methods for making such coatings. The inventive coatings comprise multiple micron-width layers of titanium nitride, titanium carbonitride, or both titanium nitride and titanium carbonitride, and may also contain a layer of aluminum oxide, and may be characterized by alternating layers of titanium nitride and titanium carbonitride. The present coatings curtail the growth of microcracks that can otherwise result from surface cracks or scratches on coated substrates, and thereby provide improved wear characteristics, resist scratching, and prevent the penetration of corrosive fluids to the substrate material.

Abstract: The present invention provides organometallic compounds and methods of forming thin films including using the same. The organometallic compounds include a metal and a ligand linked to the metal. The ligand can be represented by the following formula (1): wherein R1 and R2 are each independently hydrogen or an alkyl group. The thin films may be applied to semiconductor structures such as a gate insulation layer of a gate structure and a dielectric layer of a capacitor.

Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.

Abstract: The disclosure related to a method for making a nanowire structure. The method includes fabricating a free-standing carbon nanotube structure, introducing reacting materials into the carbon nanotube structure, and activating the reacting materials to grow a nanowire structure.

Abstract: Some embodiments include methods of forming metal-containing structures. A first metal-containing material may be formed over a substrate. After the first metal-containing material is formed, and while the substrate is within a reaction chamber, hydrogen-containing reactant may be used to form a hydrogen-containing layer over the first metal-containing material. The hydrogen-containing reactant may be, for example, formic acid and/or formaldehyde. Any unreacted hydrogen-containing reactant may be purged from within the reaction chamber, and then metal-containing precursor may be flowed into the reaction chamber. The hydrogen-containing layer may be used during conversion of the metal-containing precursor into a second metal-containing material that forms directly against the first metal-containing material. Some embodiments include methods of forming germanium-containing structures, such as, for example, methods of forming phase change materials containing germanium, antimony and tellurium.

Abstract: A disclosed substrate position detection apparatus includes an imaging portion configured to take an image of a substrate subject to a position detection; a panel member provided between the imaging portion and the substrate and including a first opening that ensures a field of view for the imaging portion with respect to the substrate, the panel member having a light scattering property; a first illuminating portion configured to illuminate the panel member; and a processing portion capable of determining a position of the substrate in accordance with the image taken through the first opening by the imaging portion.

Abstract: A data storage device comprising a storage medium having a recordable surface, a transducing head having a bearing surface positioned adjacent to the recordable surface of the storage medium, and at least one compound disposed between the recordable surface and the bearing surface, the at least one compound comprising at least one functional group that imparts corrosion resistance and at least one functional group that imparts lubricating properties.

Abstract: An alkoxide compound of formula (I) suitable as a material for thin film formation used in thin film formation involving vaporization of a material such as CVD, a material for thin film formation including the alkoxide compound, and a process for thin film formation using the material. The process includes vaporizing the material for thin film formation, introducing the resulting vapor containing the alkoxide compound, onto a substrate, and causing the vapor to decompose and/or chemically react to form a thin film on the substrate. wherein one of R1 and R2 represents an alkyl group having 1-4 carbon atoms, the other representing a hydrogen atom or an alkyl group having 1-4 carbon atoms; R3 and R4 each represent an alkyl group having 1-4 carbon atoms; A represents an alkanediyl group having 1-8 carbon atoms; M represents a silicon atom or a hafnium atom; and n represents 4.

Abstract: An isotope-doped carbon nanotube (40) includes at least two kinds of carbon nanotube segments, each kind of carbon nanotube segment having a unique carbon isotope. The at least two kinds of carbon nanotube segments are arranged along a longitudinal direction of the carbon nanotube alternately or non-alternately. The carbon isotope is selected from the group consisting of a carbon-12 isotope, a carbon-13 isotope and a carbon-14 isotope. Three preferred methods employ different single isotope sources to form isotope-doped carbon nanotubes. In a chemical vapor deposition method, different isotope source gases are alternately or non-alternately introduced. In an arc discharge method, a power source is alternately or non-alternately switched between different isotope anodes. In a laser ablation method, a laser is alternately or non-alternately focused on different isotope targets.

Abstract: Methods for performing periodic plasma annealing during atomic layer deposition are provided along with structures produced by such methods. The methods include contacting a substrate with a vapor-phase pulse of a metal source chemical and one or more plasma-excited reducing species for a period of time. Periodically, the substrate is contacted with a vapor phase pulse of one or more plasma-excited reducing species for a longer period of time. The steps are repeated until a metal thin film of a desired thickness is formed over the substrate.

Abstract: Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials.

Abstract: The invention relates to a process and a device for the production of mouldings containing a layer of polyurethane in shot operation, in which a gas stream is introduced into the flow channel of the spray device in at least two positions.

Abstract: An apparatus for generating a gaseous chemical precursor is provided and contains a canister having a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending into the canister and having an inlet end and an outlet end, wherein the inlet end is coupled to the inlet port. The apparatus further contains a gas dispersion plate coupled to the outlet end of the inlet tube, wherein the gas dispersion plate is at an angle within a range from about 3° to about 80°, relative to a horizontal plane which is perpendicular to a vertical axis of the canister.

Abstract: A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into a rotating-disc reactor and directed downwardly onto a wafer carrier and substrates which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-250° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

Abstract: A furnace temperature control method for thermal budget balance includes the steps of: placing a plurality of batches of wafers in the furnace; processing the wafers in the furnace via a heat deposition process; adjusting temperature in the furnace during the heat deposition process so that the temperature in the furnace has a temperature gradient; and controlling and inverting the temperature gradient so that the wafers in the furnace have the same thermal budget, whereby the electric parameters of the processed wafers tend to become uniform. Accordingly, considering the influence of the thermal budget, the present invention adjusts the temperature in the furnace and balances the thermal budget of the wafers in the furnace to avoid that the electric parameters of the processed wafers have extreme values, thereby improving the yield rate.

Abstract: Disclosed herein is a method for producing a 1-IH-VI2 compound thin film on a substrate through a single Metal Organic Chemical Vapor Deposition (MOCVD) process, wherein a Group III element and Group VI element-containing single precursor, a Group I metal-containing precursor, and a Group VI element-containing precursor or a Group VI element-containing gas are concurrently supplied to a substrate and subjected to MOCVD to form a I-III-VI2 compound thin film on the substrate. The method employs a single deposition process to form the thin film and is thus provides a more economical, simplified process as compared to conventional methods. In addition, the method is capable of producing a thin film with an even surface and few or no inner pores, and, advantageously, is thus useful as a light-absorbing layer for a solar cell.

Abstract: In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.

Abstract: Embodiments of the invention generally relate to a concentric gas manifold assembly used in deposition reactor or system during a vapor deposition process. In one embodiment, the manifold assembly has an upper section coupled to a middle section coupled to a lower section. The middle section contains an inlet, a manifold extending from the inlet to a passageway, and a tube extending along a central axis and containing a channel along the central axis and in fluid communication with the passageway. The lower section of the manifold assembly contains a second manifold extending from a second inlet to a second passageway and an opening concentric with the central axis. The tube extends to the opening to form a second channel between the tube and an edge of the opening. The second channel is concentric with the central axis and is in fluid communication with the second passageway.

Abstract: In a transparent electroconductive film including a transparent substrate and a transparent electroconductive oxide layer disposed on the transparent substrate, when the transparent electroconductive oxide layer is composed of zinc oxide, the surface resistivity of the transparent electroconductive oxide layer increases with time and thus it has been difficult to obtain a transparent electroconductive film stable against an environmental variation. Consequently, hard carbon films are provided on the surfaces of a transparent electroconductive oxide layer including at least one layer and containing zinc oxide as a main component in “the order of transparent substrate-hard carbon film-transparent electroconductive oxide layer-hard carbon film” or “the order of hard carbon film-transparent substrate-transparent electroconductive oxide layer-hard carbon film”. Alternatively, an organosilicon compound covering layer is provided on a surface of the transparent electroconductive oxide layer.

Abstract: Methods are provided for pulsed chemical vapor deposition (CVD) of complex nitrides, such as ternary metal nitrides. Pulses of metal halide precursors are separated from one another and nitrogen-containing precursor is provided during the metal halide precursor pulses as well as between the metal halide precursor pulses. Two different metal halide precursors can be provided in simultaneous pulses, alternatingly, or in a variety of sequences. The nitrogen-containing precursor, such as ammonia, can be provided in pulses simultaneously with the metal halide precursors and between the metal halide precursors, or continuously throughout the deposition. Temperatures can be kept between about 300° C. and about 700° C.

Abstract: Embodiments of the invention provide a method for depositing materials on substrates. In one embodiment, the method includes depositing a barrier layer containing tantalum or titanium on a substrate, depositing a ruthenium layer or a cobalt layer on the barrier layer, and depositing a tungsten bulk layer thereover. In some examples, the barrier layer may contain tantalum nitride deposited by an atomic layer deposition (ALD) process, the tungsten bulk layer may be deposited by a chemical vapor deposition (CVD) process, and the ruthenium or cobalt layer may be deposited by an ALD process. The ruthenium or cobalt layer may be exposed to a soak compound, such as hydrogen, diborane, silane, or disilane, during a soak process prior to depositing the tungsten bulk layer. In some examples, a tungsten nucleation layer may be deposited on the ruthenium or cobalt layer, such as by ALD, prior to depositing the tungsten bulk layer.

Abstract: Exemplary methods of producing single-walled carbon nanotubes (SWCNTs) are disclosed. A plurality of seed cap molecules having a same diameter and a same chirality are prepared. The plurality of seed cap molecules are attached to a plurality of catalyst particles to form a plurality of catalyst-cap composites. Carbon atoms are provided to the catalyst-cap composites. Carbon nanotubes having the same diameter and the same chirality are grown on the plurality of catalyst-cap composited by exposing the composites to the carbon atoms.

Abstract: Systems and techniques involving optical coatings for semiconductor devices. An implementation includes a substantially isotropic, heterogeneous anti-reflective coating having a substantially equal thickness normal to any portion of a substrate independent of the orientation of the portion.

Abstract: Some embodiments include deposition systems configured for reclaiming unreacted precursor with one or more traps provided downstream of a reaction chamber. Some of the deposition systems may utilize two or more traps that are connected in parallel relative to one another and configured so that the traps may be alternately utilized for trapping precursor and releasing trapped precursor back into the reaction chamber. Some of the deposition systems may be configured for ALD, and some may be configured for CVD.

Abstract: A cyclic deposition process to make a metal oxide film on a substrate, which comprises the steps: introducing a metal ketoiminate into a deposition chamber and depositing the metal ketoiminate on a heated substrate; purging the deposition chamber to remove unreacted metal ketominate and any byproduct; introducing an oxygen-containing source to the heated substrate; purging the deposition chamber to remove any unreacted chemical and byproduct; and, repeating the cyclic deposition process until a desired thickness of film is established.

Abstract: It is an object to provide a novel material that can quickly form metal silver even at a low temperature of approximately 210° C. or less. This serves as a metal silver forming material that includes a silver ?-ketocarboxylate. By heating this forming material, it is possible to form metal silver quickly even at a low temperature of approximately 210° C. or less. Examples of the silver ?-ketocarboxylate include silver isobutyrylacetate, silver benzoylacetate, silver acetoacetate, silver propionylacetate, silver ?-methylacetoacetate, and silver ?-ethylacetoacetate.

Abstract: Embodiments of the invention provide a method for forming a material on a substrate during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a method is provided which includes flowing at least one process gas through at least one conduit to form a circular gas flow pattern, exposing a substrate to the circular gas flow pattern, sequentially pulsing at least one chemical precursor into the process gas and igniting a plasma from the process gas to deposit a material on the substrate. In one example, the circular gas flow pattern has circular geometry of a vortex, a helix, a spiral, or a derivative thereof. Materials that may be deposited by the method include ruthenium, tantalum, tantalum nitride, tungsten or tungsten nitride. Other embodiments of the invention provide an apparatus configured to form the material during the PE-ALD process.

Abstract: The use of deposition modules groups for each CVD deposition position including at least two deposition modules, together with a Motion Control System that controls and confines the motion of said deposition modules, enables a quick deposition module exchange at the deposition locations of On-Line or Off-Line CVD coating system. This results in a high volume large area CVD coating system that can increase the commercial viability of a given CVD system design through production throughput increases, production cost reductions, overall higher process flexibility and/or improved film quality.

Abstract: A deposition apparatus includes plural first plate members arranged within a hermetically-sealable cylindrical chamber, wherein the plural first plate members each having an opening are arranged in a first direction along a center axis of the chamber with a first clearance therebetween; and plural second plate members arranged in the first direction with the first clearance therebetween, the plural second plate members being reciprocally movable through the openings of the plural first plate members. A first pair of first plate members among the plural first plate members provides a first passage for a first gas flowing in a second direction toward an inner circumferential surface of the chamber. A second pair of first plate members among the plural first plate members provides a second passage for a second gas flowing in the second direction. A pair of second plate members among the plural second plate members supports a wafer.

Abstract: A substrate processing apparatus includes a transport chamber and a processing chamber that processes substrates. The transport chamber has a first substrate transport member transporting the substrates from the transport chamber to the processing chamber. The processing chamber has a first processing unit which is adjacent to the transport chamber and has a first substrate placing base, a second processing unit which is adjacent to the other side of the transport chamber in the first processing unit and has a second substrate placing base, a second substrate transport member transporting the substrates between the first processing unit and the second processing unit, and a control unit controlling at least the second substrate transport member.

Abstract: A gas supply method supplies a source gas produced by heating and sublimating a solid source material in a source material container to a consuming area. The method includes the steps of: (a) flowing a carrier gas through a processing gas supply line and measuring a gas pressure therein; (b) heating the solid source material to produce the source gas; (c) supplying a carrier gas which has the same flow rate as the carrier gas in the step (a) to the source material container and measuring a gas pressure in the processing gas supply line while flowing the source gas together with the carrier gas through the processing gas supply line; and (d) calculating the flow rate of the source gas based on the pressure measurement values obtained in the steps (a) and (c), and the flow rate of the carrier gas.

Abstract: A lithographic apparatus is disclosed in which a specific coating is applied to a specific surface. The coating is made from at least 99 wt % of at least one of the following: a transition metal oxide; a poor metal oxide, sulfide or selenide; a compound with the formula ATiOn where A is an element from Group 2 of the Periodic Table; or TiO2 doped with a metal from Group 3, 5 or 7 of the Periodic Table, wherein the coating is less than or equal to 49 nm thick.

Abstract: A film deposition apparatus includes a turntable rotatably provided in a chamber. First and second reaction gas supplying portions supply first and second reaction gases to one surface of the turntable, respectively. A separation gas is discharged from a separation gas supplying portion to a separation area between a first process area to which the first reaction gas is supplied and a second process area to which the second reaction gas is supplied. A ceiling surface is provided in the separation area to form a thin space between the turntable to allow the separation gas flowing from the separation area to a process area side. An elevation mechanism to move the substrate upward and downward is provided in a substrate placement part. The elevation mechanism is movable in upward and downward directions relative to the turntable and movable in a radial direction of the turntable.

Abstract: An organoruthenium complex represented by the general formula (1-1), bis(acetylacetonato)(1,5-hexadiene)ruthenium and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, show excellent stability against moisture, air and heat, and are suitable for the film formation by a CVD method. (1-1) wherein X represents a group represented by the general formula (1-2); Y represent a group represented by the general formula (1-2) or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds: (1-2) wherein Ra and Rb independently represent a linear or branched alkyl group having 1 to 5 carbon atoms.

Abstract: A film deposition apparatus is configured to deposit a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to stack multiple layers of a reaction product in a vacuum chamber so that a thin film is formed. The film deposition apparatus includes a rotation table, a substrate providing area, a first reaction gas supplying part, a second reaction gas supplying part, a separation area, a center part area, an evacuation opening, and a substrate cooling part.

Abstract: A film deposition apparatus for forming a thin film by supplying a first reactant gas and a second reactant gas in a vacuum container includes a rotation table, a first reactant gas supply unit and a second reactant gas supply unit extending radially at a first angular position and at a second angular position with respect to a rotation center, respectively, a first purge gas supply unit disposed at a third angular position between the first angular position and the second angular position, a first space having a first height in an area including the first angular position, a second space having a second height in an area including the second angular position, a third space disposed in an area including the third angular position having a height lower than the first height and the second height, and a heating unit configured to heat the first purge gas.

Abstract: In chemical vapor deposition apparatus, a water carrier (32) has a top surface (34) holding the wafers and a bottom surface (36) heated by radiant heat transfer from a heating element (28). The bottom surface (36) of the wafer carrier is non-planar due to features such as depressions (54) so that the wafer carrier has different thickness at different locations. The thicker portions of the wafer carrier have higher thermal resistance. Differences in thermal resistance at different locations counteract undesired non-uniformities in heat transfer to the wafer. The wafer carrier may have pockets with projections (553, 853) for engaging spaced-apart locations on the edges of the wafer.

Abstract: A film deposition apparatus to form a thin film by supplying first and second reaction gases within a vacuum chamber includes a turntable, a protection top plate, first and second reaction gas supply parts extending from a circumferential edge towards a rotation center of the turntable, and a separation gas supply part provided therebetween. First and second spaces respectively include the first and second reaction gas supply parts and have heights H1 and H2. A third space includes the separation gas supply part and has a height H3 lower than H1 and H2. The film deposition apparatus further includes a vacuum chamber protection part which surrounds the turntable and the first, second and third spaces together with the protection top plate to protect the vacuum chamber from corrosion.

Abstract: A disclosed film deposition apparatus includes a turntable including a substrate receiving area; a first reaction gas supplier for supplying a first reaction gas to a surface of the turntable having the substrate receiving area; a second reaction gas supplier, arranged away from the first reaction gas supplier along a circumferential direction of the turntable, for supplying a second reaction gas to the surface; a separation area located along the circumferential direction between a first process area of the first reaction gas and a second process area of the second reaction gas; a separation gas supplier for supplying a first separation gas to both sides of the separation area; a first heating unit for heating the first separation gas to the separation gas supplier; an evacuation opening for evacuating the gases supplied to the turntable; and a driver for rotating the turntable in the circumferential direction.

Abstract: A film deposition apparatus for depositing a thin film on a substrate by feeding at least two kinds of reaction gases in a vacuum chamber includes a turntable; a substrate placement part on the turntable; a first and a second reaction gas feed part provided apart from each other to feed a first and a second reaction gas into a first and a second process region, respectively, on the turntable; a separation region positioned between the first and second process regions and including a first separation gas feed part to feed a first separation gas and a ceiling surface; a center part region positioned inside the vacuum chamber and including an ejection opening for ejecting a second separation gas; an evacuation port; and a drive part to rotate the turntable so that the substrate passes through the first and second process regions at different angular velocities of the turntable.