Abstract: A method of coating a substrate that includes the steps of: applying by chemical vapor deposition at a temperature ranging between about 750 degrees Centigrade and about 920 degrees Centigrade an alpha-alumina coating layer wherein the alpha-alumina coating layer exhibits a platelet grain morphology at the surface thereof.

Abstract: Methods and apparatuses for separately injecting gases into a reactor for a substrate processing system. The flow profiles of the gases are controlled with two or more sets of adjustable gas flow injectors. The methods are particularly useful for selective deposition of gases in a CVD system using volatile combinations of precursors and etchants. In either case, the gases are provided along separate flow paths that intersect in a relatively open reaction space, rather than in more confined upstream locations.

Abstract: A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.

Abstract: Among others, techniques are described for forming nanotubes. In one aspect, a method includes forming a base layer of a transition metal on a substrate. The method also includes heating the substrate with the base layer in a mixture of gases to grow nanotubes on the base layer.

Abstract: Provided are large area and uniform VHF plasma CVD apparatus and method wherein a plasma generating source constitutes the VHF plasma CVD apparatus for manufacturing a tandem-type thin film silicon solar cell, and influences of standing waves, generation of harmful plasma other than between a pair of electrodes and supply power consumption other than between the pair of electrodes are suppressed. First and second power feed points are arranged on an electrode at positions facing each other. A distance between the power feed points is set at an integral multiple of a half of the wavelength of the using power, and a pulse power separated in terms of time is supplied. The pulse power is outputted from two phase-variable double output high frequency power supplies which can perform pulse modulation.

Abstract: It is an object of the present invention to provide a manufacturing apparatus that reduces a manufacturing cost by enhancing efficiency in the use of an EL material and that is provided with a vapor deposition apparatus which is one of manufacturing apparatuses superior in uniformity in forming an EL layer and in throughput in the case of manufacturing a full-color flat panel display using emission colors of red, green, and blue. According to one feature of the invention, a mask having a small opening with respect to a desired vapor deposition region is used, and the mask is moved accurately. Accordingly, a desired vapor deposition region is vapor deposited entirely. In addition, a vapor deposition method is not limited to movement of a mask, and it is preferable that a mask and a substrate move relatively, for example, the substrate may be moved at a ?m level with the mask fixed.

Abstract: A method for fabricating a composite material includes providing a free-standing carbon nanotube structure having a plurality of carbon nanotubes, introducing at least two reacting materials into the carbon nanotube structure to form a reacting layer, activating the reacting materials to grow a plurality of nanoparticles, wherein the nanoparticles are spaced from each other and coated on a surface of each of the carbon nanotubes of the carbon nanotube structure.

Abstract: A structural film, typically of silicon, in MEMS or NEMS devices is fabricated by depositing the film in the presence of a gas other than nitrogen, and preferably argon as the carrier gas.

Abstract: A method for pre-conditioning a film precursor vaporization system configured to supply a film precursor vapor to a deposition system for performing a deposition process is described. Prior to the deposition process, the gas pressure within the film precursor vaporization system is adjusted to a pre-determined target pressure. For example, the gas pressure within the film precursor vaporization system can be adjusted to a pressure consistent with a flow of process gas containing the film precursor vapor and a carrier gas to the deposition system at a flow rate utilized during the deposition process without introducing the process gas to the deposition system prior to the deposition process.

Abstract: Provided is a barrier laminate having higher barrier property. The barrier laminate has an organic layer obtained by curing a polymerizable composition comprising a compound represented by the following formula (1); wherein R1's represent a substituent, and R1's each may be the same or different to each other; n's are an integer of 0 to 5, and n's each may be the same or different to each other; provided that at least one of R1's comprises a polymerizable group.

Abstract: Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material may be formed by spin-casting a conformal layer of the first material across the features, or by selective deposition along the features relative to the substrate. After the first material is formed, fill material may be provided between the features while leaving regions of the first material exposed. The exposed regions of the first material may then be selectively removed relative to both the fill material and the features to create the pattern of openings.

Abstract: An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit.

Abstract: The instant disclosure relates to a protective coating for an industrial part working surface. The protective coating includes a first protective portion, and at least one additional protective portion positioned on the first protective portion. The first protective portion includes marker particles in a first coating matrix, where the marker particles make up from about 5 to 40 volume percent of the first protective portion and each marker particle has a diameter ranging from about 0.01 microns to 100 microns. The at least one additional protective portion includes a second coating matrix, and, in the second coating matrix, either i) a decreased amount of marker particles in comparison to an amount of the marker particles in the first protective portion or ii) no marker particles.

Abstract: A film is deposited to a predetermined thickness on a wafer by allowing the wafer placed on a susceptor to alternately move through plural process areas where corresponding plural reaction gases are supplied from corresponding plural reaction gas supplying portions and a separation area where a separation gas is supplied from a separation gas supplying portion in order to separate the plural reaction gases. Such movement is achieved by rotating the susceptor relative to the plural reaction gas supplying portions and the separation gas supplying portion, or rotating the plural reaction gas supplying portions and the separation gas supplying portion relative to the susceptor. Then, when the film is deposited in the above manner to a predetermined thickness, the film deposition is temporarily stopped; the wafer is rotated around its center; and the film is deposited to another predetermined thickness in the same manner.

Abstract: A gas injector system is provided that allows for improved distribution and directional control of the vapor material in a CVD or CVI process. Gas injector systems may be used without experiencing significant clogging of gas injector tube apertures over multiple CVD procedures. Further, a gas injector system include a dual aperture release system and/or allow vapor material to flow both substantially horizontally and substantially vertically.

Abstract: An energy storage device structure comprises a first electrode layer, an electrolyte layer and a second electrode layer. At least one of the electrode layers comprise a metallic foil base layer and a layer of carbon nanotubes grown on the base layer, the carbon nanotube layer being arranged to face the electrolyte layer. The structure may be made in such a way that its width and length are much larger than its thickness, so that it can rolled up or folded and then hermetically sealed to form an energy storage unit. The layer of carbon nanotubes is grown on the metallic foil base layer by a chemical vapor deposition process at a temperature no higher than 550° C. The carbon nanotubes in the carbon nanotube layer are at least partially aligned in a direction that is perpendicular to the surface of the metallic base layer.

Abstract: Methods are disclosed of determining a fill level of a precursor in a bubbler. The bubbler is fluidicly coupled with a substrate processing chamber through a vapor-delivery system. The bubbler and vapor-delivery system are backfilled with a known dose of a backfill gas. A pressure and temperature of the backfill gas are determined, permitting a total volume for the backfill gas in the bubbler and vapor-delivery system to be determined by application of a gas law. The fill level of the precursor in the bubbler is determined as a difference between (1) a total volume of the bubbler and vapor-delivery system and (2) the determined total volume for the backfill gas.

Abstract: This invention discloses a method of making an oxygen scavenging particle comprised of an activating component and an oxidizable component wherein one component is deposited upon the other component from a vapor phase and is particularly useful when the activating component is a protic solvent hydrolysable halogen compound and the oxygen scavenging particle is a reduced metal.

Abstract: The invention provides a method for forming a composite membrane, including: (a) loading a substrate into a chamber; (b) performing a first cycle step in the chamber to form a single aluminum oxide (Al2O3) layer; and (c) performing a second cycle step in the chamber to form a single hafnium oxide (HfO2) layer. The steps include: (1) introducing an Al element containing a first reactant into the chamber; (2) removing the first reactant from the chamber; (3) introducing an O element containing a second reactant into the chamber; (4) removing the second reactant from the chamber; (5) introducing an Hf element containing a third reactant into the chamber; and (6) removing the third reactant from the chamber. The first cycle step is composed of steps (1) to (4), and the second cycle step is composed of steps (3) to (6).

Abstract: A metal precursor, selected from among: (i) precursors of the formula (NR1R2)4-xM(chelate)x, and (ii) precursors of the formula (NR10R11)4-2yM(12RN(CH2)zNR13)y, wherein: x=1, 2, 3, or 4; M=Ti, Zr, or Hf; each chelate is independently selected from among guanidinate, amidinate, and isoureate ligands of specific formula; y is 0, 1, or 2; and each of R1, R2, R10, R11, R12 and R13 is independently selected from among H, C1-C12 alkyl, C1-C12 alkylamino, C1-C12 alkoxy, C3-C10 cycloalkyl, C2-C12 alkenyl, C7-C12 aralkyl, C7-C12 alkylaryl, C6-C12 aryl, C5-C12 heteroaryl, C1-C10 perfluoroalkyl, and silicon-containing groups selected from the group consisting of silyl, alkylsilyl, perfluoroalkylsilyl, triarylsilyl and alkylsilylsilyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl, acetylalkyl, and N-bonded functionality between two different nitrogen atoms of the precursor can be C1-C4 alkylene, silylene (—SiH2—), or C1-C4 dialkylsilylene.

Abstract: A TiN film is formed to have a predetermined thickness on a semiconductor wafer by heating the semiconductor wafer at a film formation temperature within a process container and performing a cycle including a first step and a second step at least once. The first step is arranged to supply a TiCl4 gas and a NH3 gas to form a film of TiN by CVD. The second step is arranged to stop the TiCl4 gas and supply the NH3 gas. In film formation, the semiconductor wafer is set at a temperature of less than 450° C. and the process container is set to have therein a total pressure of more than 100 Pa. The NH3 gas is set to have a partial pressure of 30 Pa or less within the process container in the first step.

Abstract: A process for producing a silicon compound can minimize the number of steps and can form a desired compound in a low-temperature environment. The process comprises: allowing a radical of a halogen gas to act on a member 11 to be etched, which is disposed within a chamber 1 and is formed of a material containing an element capable of forming a compound with Si, while keeping the member 11 at a relatively high temperature, to form a gas of a precursor 24, which is a compound of the material and the halogen; holding a substrate 3 accommodated within the chamber 1 at a relatively low temperature, with the Si interface of the substrate 3 being exposed, to adsorb the precursor 24 onto the Si interface of the substrate 3; and then allowing the radical of the halogen gas to act on the precursor 24 adsorbed onto the Si interface to reduce the precursor 24, thereby producing a compound of the material and Si.

Abstract: The present invention involves injecting a liquid and gas into a vapor holding chamber held at a sufficiently high temperature to insure all the liquid injected is vaporized and held in the chamber as a vapor. The gas/vapor mixture is then delivered to the deposition chamber in which the deposition substrate is held.

Abstract: A method is provided for forming a poly-crystalline silicon film on a substrate. In one embodiment, the method comprises positioning a substrate within a processing chamber, heating the processing chamber to a deposition temperature, introducing a first silicon precursor into the processing chamber to form a buffer layer including crystal nuclei, introducing a second silicon precursor into the processing chamber to form a polysilicon film on the buffer layer, and then annealing the polysilicon film and the buffer layer.

Abstract: Hydrophobic and self-cleaning surfaces have wide applications, including glasses, camera covers, windows, solar panels and high-end finished surfaces. Many existing hydrophobic coatings either have low transmittance, making them unsuitable for high light transmission applications, or are insufficiently hydrophobic. The present invention concerns high-quality hypertransparent superhydrophobic coatings, for example SiO2-based, with double-roughness microstructure that were deposited on to, for example, glass substrates using, for example, the combustion chemical vapor deposition (CCVD) technique. Embodiments of the invention include coatings with a contact angle of higher than 165°, a rolling angle of <5°, a haze of <0.5%, and an increased transmittance by 2% higher and a reflectance of 2% lower than bare glass. The double roughness can improve wear resistance. Additionally, other surface chemistries can be applied to yield hydrophilic, oliophobic, or oliophobic surfaces.

Abstract: Transparent optical ceramic coating materials have been fabricated from europium-doped lutetium oxide (Lu2O3:Eu) using physical vapor deposition and chemical vapor deposition techniques. The non-pixilated film coatings have columnar microcrystalline structure and excellent properties for use as radiological scintillators, namely very high density, high effective atomic number, and light output and emission wavelength suitable for use with silicon-based detectors having a very high quantum efficiency. The materials can be used in a multitude of high speed and high resolution imaging applications, including x-ray imaging in medicine.

Abstract: A method for fabricating a photonic crystal structure is disclosed herein for forming a cavity-type or a pillar type photonic crystal structure of a large area. By the property that a hetero-interface inhibits epitaxial growth, a patterned film layer is formed over the epitaxy substrate, so a photonic crystal structure is grown vertically by epitaxy in area outside of the patterned film layer on the epitaxy substrate. Furthermore, by designing the pattern of the patterned film, a defect mode photonic crystal structure such as an optical waveguide, an optical resonator and a beam splitter can be formed.

Abstract: A plasma processing method of carrying out curing processing on a low dielectric constant film produced on a to-be-processed substrate by applying plasma thereto in a processing chamber of a plasma processing apparatus, includes the steps of: a) introducing, in the plasma processing chamber, a first gas having a function of stabilizing plasma and a second gas generating active hydrogen, and, after that; b) generating plasma, and carrying out curing processing on the low dielectric constant film.

Abstract: A golden ornament includes a base material; a Ti coating film which is formed on a surface of the base material in an atmosphere of an inert gas other than nitrogen and whose Ti atom content is constant in the thickness direction; a TiN gradient coating film which is formed on the Ti coating film and whose N atom content has a gradient in the thickness direction; a TiN coating film which is formed on the TiN gradient coating film and whose contents of Ti atoms and N atoms are constant in the thickness direction; an Au—TiN mixture gradient coating film which is formed on the TiN coating film and whose Au atom content has a gradient in the thickness direction; and an Au—TiN mixture coating film which is formed on the Au—TiN mixture gradient coating film and whose contents of Au atoms, Ti atoms, and N atoms are constant in the thickness direction.

Abstract: In a hydrogen atom generation source in a vacuum treatment apparatus which can effectively inhibit hydrogen atoms from being recombined due to contact with an internal wall surface of a treatment chamber of the vacuum treatment apparatus and an internal wall surface of a transport passage, and being returned into hydrogen molecules, at least a part of a surface facing a space with the hydrogen atom generation source formed therein of a member surrounding the hydrogen atom generation source is coated with SiO2. In a hydrogen atom transportation method for transporting hydrogen atoms generated by the hydrogen atom generation source in the vacuum treatment apparatus to a desired place, the hydrogen atoms are transported via a transport passage whose internal wall surface is coated with SiO2.

Abstract: A method of forming a nitrided high-k film by disposing a substrate in a process chamber and forming the nitrided high-k film on the substrate by a) depositing a nitrogen-containing film, and b) depositing an oxygen-containing film, wherein steps a) and b) are performed in any order, any number of times, so as to oxidize at least a portion of the thickness of the nitrogen-containing film. The oxygen-containing film and the nitrogen-containing film contain the same one or more metal elements selected from alkaline earth elements, rare earth elements, and Group IVB elements of the Periodic Table, and optionally aluminum, silicon, or aluminum and silicon. According to one embodiment, the method includes forming a nitrided hafnium based high-k film. The nitrided high-k film can be formed by atomic layer deposition (ALD) or plasma-enhanced ALD (PEALD).

Abstract: The present invention provides a method for depositing self-aligned carbon nanomaterials (carbon nanoflake, carbon nanotube, carbon nanorod and carbon nanosphere), by inducing a gas chemistry for the carbon nanomaterials, on a substrate having a large area of several inches in diameter, under the conventional CVD diamond deposition conditions. The well-aligned carbon nanomaterials on the large area are applicable for sensitive base materials in the fields including biochemistry and electrochemistry.

Abstract: The invention relates to hard-coated bodies with a single- or multi-layer system containing at least one Ti1-xAlxN hard layer and a method for production thereof. The aim of the invention is to achieve a significantly improved wear resistance and oxidation resistance for such hard-coated bodies. Said hard-coated bodies are characterised in that the bodies are coated with at least one Ti1-xAlxN hard layer, generated by CVD without plasma stimulation present as a single-phase layer with cubic NaCl structure with a stoichiometric coefficient x>0.75 to x=0.93 and a lattice constant afcc between 0.412 nm and 0.405 nm, or as a multi-phase layer, the main phase being Ti1-xAlxN with a cubic NaCl structure with a stoichiometric coefficient x>0.75 to x=0.93 and a lattice constant afcc between 0.412 nm and 0.405 nm, with Ti1-xAlxN with a wurtzite structure and/or as TiNx with NaCl structure as further phase. Another feature of said hard layer is that the chlorine content is in the range of only 0.05 to 0.9 atom %.

Abstract: A method for depositing a film onto a substrate is provided. The substrate is contained within a reactor vessel at a pressure of from about 0.1 millitorr to about 100 millitorr. The method comprises subjecting the substrate to a reaction cycle comprising i) supplying to the reactor vessel a gas precursor at a temperature of from about 20° C. to about 150° C. and a vapor pressure of from about 0.1 torr to about 100 torr, wherein the gas precursor comprises at least one organo-metallic compound; and ii) supplying to the reactor vessel a purge gas, an oxidizing gas, or combinations thereof.

Abstract: A method for using a film formation apparatus includes performing a main cleaning process and a post cleaning process in this order inside a reaction chamber. The main cleaning process is arranged to supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching a film formation by-product containing silicon. The post cleaning process is arranged to remove a silicon-containing fluoride generated by the main cleaning process and remaining inside the reaction chamber and to alternately repeat, a plurality of times, supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization, and supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product.

Abstract: Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.

Abstract: A method of making a solid oxide fuel cell electrolyte includes preheating a substrate on which an oxide electrolyte layer is to be deposited to a substrate temperature of about 1100° C. and above, impinging a surface of a source comprising the oxide with an electron beam in an evacuated chamber at a pressure of about 10?3 or less mm of Hg devoid of process gas, such as oxygen, to evaporate the oxide in the chamber, and placing the preheated substrate in the chamber where the oxide deposits on the preheated substrate. The oxide fuel cell electrolyte is deposited having a columnar oxide microstructure.

Abstract: A method for improving the heat stability of polyparaxylylene and a derivative film thereof to improve the heat resistance of the polyparaxylylene and the derivative film thereof without deteriorating deposition characteristics or profitability, and a polyparaxylylene derivative whose heat resistance is improved are provided. When the polyparaxylylene or the derivative film thereof represented by a below-described general formula 1 is formed by a chemical vapor deposition method, an amino-(2.2)-paracyclophane compound represented by a below-described general formula 3 is mixed in a (2.2)-paracyclophane compound represented by a below-described general formula 2 to form a film. (In the formula 1, X1 and X2 designate hydrogen, lower alkyl or halogen. X1 and X2 may be the same or different. n represents a degree of polymerization.) (In the formula 2, X1 and X2 have the same meanings as those of the formula 1.) (In the formula 3, X3 designates hydrogen or a lower alkyl group.

Abstract: A method for depositing a thin film on a substrate in a vapor deposition system is described. Prior to the deposition process, the substrate is provided within the vapor deposition system and coupled to an upper surface of a substrate holder within the vapor deposition system, whereby the substrate is heated to a deposition temperature in a first gaseous atmosphere. Thereafter, the first gaseous atmosphere is displaced by a second gaseous atmosphere, and the pressure is adjusted to a deposition pressure. The second gaseous atmosphere comprises a gaseous composition that is substantially the same as the carrier gas utilized to transport film precursor vapor to the substrate and the optional dilution gas utilized to dilute the carrier gas and film precursor vapor.

Abstract: The invention relates to the field of methods of depositing a material on a substrate. It relates to a method of depositing, onto a substrate, a material that acts as a thermal barrier and that prior to deposition is in powder form. The powder is introduced into the plasma jet of a first plasma torch and into the plasma jet of at least one second plasma torch, the first plasma torch and at least the second plasma torch being disposed in an enclosure and oriented in such a manner that their plasma jets cross, so as to create a resultant plasma jet in which the powder is vaporized, the substrate being placed on the axis of the resultant plasma jet.

Abstract: The aim of the invention is to provide particles or coatings for splitting water, which are largely protected from corrosive damage. To this end, the particles or the coating consist(s) of a nucleus or a sub-layer and a shell or top layer, the nucleus or the sub-layer forming a reactive unit and consisting of a material which, on input of energy from sunlight, releases electrons capable of splitting water into hydrogen and oxygen, and the shell or top layer forming a protective unit capable of keeping the cleavage products away from the surface of the reactive unit and simultaneously having conductive fractions. Surprisingly, it has been found that corrosive damage to the reactive particles is (largely) prevented by the targeted separation of the reaction particles and the cleavage products over the kinetic range of the released electrons.

Abstract: The present invention provides a catalyst having high activity and excellent stability, a process for preparation of the catalyst, a membrane electrode assembly, and a fuel cell. The catalyst of the present invention comprises an electronically conductive support and catalyst fine particles. The catalyst fine particles are supported on the support and are represented by the formula (1): PtuRuxGeyTz (1). In the formula, u, x, y and z mean 30 to 60 atm %, 20 to 50 atm %, 0.5 to 20 atm % and 0.5 to 40 atm %, respectively. When the element represented by T is Al, Si, Ni, W, Mo, V or C, the content of the T-element's atoms connected with oxygen bonds is not more than four times as large as that of the T-element's atoms connected with metal bonds on the basis of X-ray photoelectron spectrum (XPS) analysis.

Abstract: The invention discloses isostatic-pressing (IP) applied to polymer (e.g., PTFE) coated razor blade edges to produce thin, dense, and uniform blade edges which in turn exhibit low initial cutting forces correlating with a more comfortable shaves. The isostatic press utilized may be a hot isostatic press (HIP) or cold isostatic press (CIP) or any other isostatic press process. The HIP conditions may include an environment of elevated temperatures and pressures in an inert atmosphere. The HIP conditions may be applied to non-sintered coatings or sintered coatings or before or after a Flutec® process is applied to coatings. CIP conditions may include room temperature and elevated pressure. The polymeric material may be a fluoropolymer or a non-fluoropolymer material or any composite thereof. It may be deposited initially by any method, including but not limited to, dipping, spin coating, sputtering, or thermal Chemical Vapor Deposition (CVD).

Abstract: Ultra-thin hybrid and/or microporous materials and methods for their fabrication are provided. In one embodiment, the exemplary hybrid membranes can be formed including successive surface activation and reaction steps on a porous support that is patterned or non-patterned. The surface activation can be performed using remote plasma exposure to locally activate the exterior surfaces of porous support. Organic/inorganic hybrid precursors such as organometallic silane precursors can be condensed on the locally activated exterior surfaces, whereby ALD reactions can then take place between the condensed hybrid precursors and a reactant. Various embodiments can also include an intermittent replacement of ALD precursors during the membrane formation so as to enhance the hybrid molecular network of the membranes.

Abstract: A system of fabricating a composite membrane from a membrane substrate using solvent-less vapor deposition followed by in-situ polymerization. A first monomer and a second monomer are directed into a mixing chamber in a deposition chamber. The first monomer and the second monomer are mixed in the mixing chamber providing a mixed first monomer and second monomer. The mixed first monomer and second monomer are solvent-less vapor deposited onto the membrane substrate in the deposition chamber. The membrane substrate and the mixed first monomer and second monomer are heated to produce in-situ polymerization and provide the composite membrane.

Abstract: A silicon-containing film-forming material includes at least one organosilane compound shown by the following general formula (1). wherein R1 to R6 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, a phenyl group, a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, provided that at least one of R1 to R6 represents a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, and n represents an integer from 0 to 3.

Abstract: A method of depositing material on a substrate comprises providing a reactor with a reaction chamber having a first volume, and contacting a surface of a substrate in the reaction chamber with a first precursor at the first chamber volume to react with and deposit a first layer on the substrate. The method further includes enlarging the reaction chamber to a second, larger volume and removing undeposited first precursor and any excess reaction product to end reaction of the first precursor with the substrate.

Abstract: A seal-protected perimeter partition valve apparatus defines a vacuum and pressure sealed space within a larger space confining a substrate processing chamber with optimized geometry, minimized footprint, and 360° substrate accessibility. A compact perimeter partitioned assembly with seal protected perimeter partition valve and internally contained substrate placement member further provides processing system modularity and substantially minimized system footprint.

Abstract: The present invention provides apparatus and methods for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom. In some embodiments, an interior-flow substrate includes a porous surface and one or more interior passages that provide reactant gas to an interior portion of a densely packed nanotube forest as it is growing. In some embodiments, a continuous-growth furnace is provided that includes an access port for removing nanotube forests without cooling the furnace substantially. In other embodiments, a nanotube film can be pulled from the nanotube forest without removing the forest from the furnace. A nanotube film loom is described. An apparatus for building layers of nanotube films on a continuous web is described.

Abstract: A static chemical vapor deposition (CVD) process may be used to deposit a coating including a ?-Ni+??-Ni3Al phase constitution over a substrate. A static CVD process is performed in a closed system that may include the substrate, and coating material and an activator. The ?-Ni+??-Ni3Al coating may be modified by one or more additional elements, including, for example, Hf, Y, Zr, Ce, La, Si, Cr, Pt, or additional elements present in the substrate. A static CVD process may include co-deposition of two or more elements, and may also include sequential static CVD steps, each of which is performed in a closed system.