Abstract: A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.

Abstract: The geometry of transition from cylindrical to rectangular shape through the conical part in hydride vapor phase epitaxial (HVPE) systems for deposition of III-nitride films is disclosed. It is used to ensure the laminar gas flow inside the growth zone of the system. For the velocity of flow within the atmospheric pressure reactor to be sufficient, the precursors are injected through the narrow diameter tubing injectors. The quartz reactor geometry is introduced to control the transition from jet to laminar flow.

Abstract: An apparatus for depositing a layer of material at different thicknesses on a substrate using atomic layer deposition (ALD) to form patterns that exhibit different colors. The patterns may be formed using a printer head that moves in a two-dimensional plane over the substrate along a path while injecting the precursor gases onto the substrate. Patterns are formed on the substrate along the path along which the printer head moves. The refraction of light incident on the layer of material on the substrate causes the deposited material to exhibit different colors.

Abstract: A method of depositing a material on a substrate is provided for use in manufacturing electronic and display devices such as semiconductors, liquid crystal displays, and organic light emitting diode displays. A deposition material stored in a first deposition source section is heated to evaporate the deposition material. A second deposition source section, which is separate from the first deposition source section, is cooled. The first deposition source section is cooled, and deposition material stored in a second deposition source section is heated so as to alternately supply evaporated deposition material from the first and second deposition source sections to a feed section. The evaporated deposition material from the feed section is supplied to a nozzle section. A substrate can be provided to receive the evaporated deposition material from the nozzle section. A thin film of deposition material can then be formed on the substrate.

Abstract: A deposition apparatus comprising a vaporizer chamber configured to hold a solid precursor of a dopant element therein. Gas input and output lines are connected to the vaporizer chamber and flow rate controllers are coupled to each of the gas input and output lines. The flow rate controllers are configured to adjust a rate of carrier gas flow into and out of the vaporizer chamber through the gas input and output lines. The vaporizer chamber has a temperature controller and pressure controller to produce vapors of the solid precursor in the vaporizer chamber that can be carried with the carrier gas flow through the output line.

Abstract: A film deposition method includes rotating a rotary table by a first angle while supplying a separation gas from a separation gas supplying part and a first reaction gas from a first gas supplying part; supplying a second reaction gas from a second gas supplying part and rotating the rotary table by a second angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; rotating the rotary table by a third angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; and supplying a third reaction gas from the second gas supplying part and rotating the rotary table by a fourth angle while supplying the separation gas and the first reaction gas.

Abstract: A multi-layer structure including an interlayer to relieve stress in the structure, a device including the structure, and a method of forming the device and structure are disclosed. The structure includes a substrate having a first coefficient of thermal expansion, an interlayer, and a coating having a second coefficient of thermal expansion. The interlayer reduces stress in the structure that would otherwise exist in the structure as a result of the difference in coefficients of thermal expansion of the substrate and the coating.

Abstract: A sensor array comprises a carrier substrate and a ferro electric layer disposed on the carrier substrate, wherein the sensor array comprises means for reading the permittivity of the ferro electric layer. The sensor array is such that the ferro electric layer is disposed in a crystalline manner on the carrier substrate. A method for producing the sensor array and to use of the same is also disclosed.

Abstract: A coating method, coated article and coating are provided. The coated article includes a low temperature component, and a graphene coating formed from a graphene derivative applied over the low temperature component. The coating method includes providing a graphene derivative, providing a low temperature component, applying the graphene derivative over the low temperature component, and forming a graphene coating. The graphene coating reduces corrosion and fouling of the low temperature component. The coating includes a graphene derivative, and modified functional groups on the graphene derivative. The modified functional groups increase adherence of the coating on application to a low temperature component.

Abstract: Self-assembled monolayer hybrid materials having a modified carboxylic acid deposited from the gas-phase onto a metal oxide substrate, methods of using targeted ?-carbon modified carboxylic acids to rapidly deposit activated organic molecules into a self-assembled monolayer on metal oxide substrates, and the self-assembled monolayer hybrid materials capable of being used in various industries, such as optoelectronics and separation science.

Abstract: A method of preparing a fuel cell electrode catalyst by preparing a platinum-carbon core-shell composite, which has a platinum nanoparticle core and a graphene carbon shell, using a simultaneous evaporation process, a method for preparing a fuel cell electrode comprising the catalyst prepared thereby, and a fuel cell comprising the same. A fuel cell comprising an electrode catalyst consisting of the core-shell composite prepared by simultaneously evaporating the platinum precursor and the organic precursor can have high performance and high durability, because the platinum particles are not agglomerated or detached and corroded even under severe conditions, including high-temperature, long use term, acidic and alkaline conditions.

Abstract: The invention concerns the use of ruthenium containing precursors having the formula (1) wherein R1, R2 . . . R10 are independently selected from H, C1-C4 linear, branched, or cyclic alkyl group, C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or trisalkyl), C1-C4 linear, branched, or cyclic alkylamino group, or a C1-C4 linear, branched, or cyclic fluoroalkyl group (totally fluorinated or not); for the deposition of a Ru containing film on a substrate.

Abstract: [Object] To provide a deposition method and a deposition apparatus capable of forming a metal compound layer having desired film characteristics uniformly in a substrate surface. [Solving Means] A deposition method according to an embodiment of the present invention includes evacuating an inside of a vacuum chamber 10 having a deposition chamber 101 formed inside a cylindrical partition wall 20 and an exhaust chamber 102 formed outside the partition wall 20, via an exhaust line 50 connected to the exhaust chamber 102. A process gas containing a reactive gas is introduced into the exhaust chamber 102. With the deposition chamber 101 being maintained at a lower pressure than the exhaust chamber 102, the process gas is supplied to the deposition chamber 101 via a gas flow passage 80 between the partition wall 20 and the vacuum chamber 10.

Abstract: The present invention relates generally to methods for producing metallic products comprising a substrate and a metallic, external coating. In preferred embodiments, the metallic products are jewelry articles.

Abstract: Provided is a placing table structure which is disposed in a processing container and has a subject to be processed thereon so as to form a thin film on the subject in the processing container by using raw material gas which generates thermal decomposition reaction having reversibility. The placing table structure is provided with a placing table for the purpose of placing the subject to be processed on a placing surface, i.e., an upper surface of the placing table structure, and a decomposition suppressing gas supply means which is arranged in the placing table for the purpose of supplying decomposition suppressing gas, which suppresses thermal decomposition of the raw material gas, toward a peripheral section of the subject placed on the placing surface of the placing table.

Abstract: A device and a method for continuous chemical vapour deposition under atmospheric pressure on substrates. The device is hereby based on a reaction chamber, along the open sides of which the substrates are guided, as a result of which the corresponding coatings can be effected on the side of the substrates which is orientated towards the chamber interior.

Abstract: A method and apparatus for coating and baking and deposition of surfaces on glass substrate or flexible substrate, such as films and thin glass sheets or other similar work pieces as it transitions thru and between small gaps of aero-static or hydro-static porous media bearings and differentially pumped vacuum grooves, in a non-contact manner, in order to process within a vacuum environment. The process is also intended to incorporate simultaneous and immediately sequential ordering of various processes.

Abstract: An apparatus comprising a dispersion plate, a dispersion plate, the dispersion plate including input side openings connected to holes therein, the holes following a torturous path through the dispersion plate and configured to deliver dopants through output side openings of the dispersion plate.

Abstract: The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures.

Abstract: A fluffy nano-material and method of manufacture are described. At 2000× magnification the fluffy nanomaterial has the appearance of raw, uncarded wool, with individual fiber lengths ranging from approximately four microns to twenty microns. Powder-based nanocatalysts are dispersed in the fluffy nanomaterial. The production of fluffy nanomaterial typically involves flowing about 125 cc/min of organic vapor at a pressure of about 400 torr over powder-based nano-catalysts for a period of time that may range from approximately thirty minutes to twenty-four hours.

Abstract: A high-temperature insulation assembly for use in high-temperature electrical machines and a method for forming a high-temperature insulation assembly for insulating conducting material in a high-temperature electrical machine. The assembly includes a polymeric film and at least one ceramic coating disposed on the polymeric film. The polymeric film is disposed over conductive wiring or used as a conductor winding insulator for phase separation and slot liner.

Abstract: A chemical vapor deposition process and article formed by a chemical vapor deposition process are disclosed. The process includes pretreating a substrate by exposing the substrate to an oxidative environment for a period of time, decomposing a material to form a layer on the substrate, and functionalizing one or both of the layer and the substrate. The pretreating pre-oxidizes the substrate.

Abstract: A system and method for continuous atomic layer deposition. The system and method includes a housing, a moving bed which passes through the housing, a plurality of precursor gases and associated input ports and the amount of precursor gases, position of the input ports, and relative velocity of the moving bed and carrier gases enabling exhaustion of the precursor gases at available reaction sites.

Abstract: A chemical vapor deposition raw material for producing a platinum thin film or a platinum compound thin film by a chemical vapor deposition method, wherein the chemical vapor deposition raw material includes an organoplatinum compound having cyclooctadiene and alkyl anions coordinated to divalent platinum, and the organoplatinum compound is represented by the following formula. Here, one in which R1 and R2 are any combination of propyl and methyl, propyl and ethyl, or ethyl and methyl is particularly preferred. wherein R1 and R2 are alkyl groups, and R1 and R2 are different; and a number of carbon atoms of R1 and R2 is 3 to 5 in total.

Abstract: The microacoustic component has a substrate that has at least one layer (composed of a dielectric or piezoelectric material, and a metallic strip structure. The layer is composed of a dielectric or piezoelectric material and/or the metallic strip structure have/has been produced or can be produced by the atomic layer deposition method.

Abstract: A coating installation includes at least one recipient which can be evacuated and which is provided to receive a substrate, at least one gas supply device which can introduce at least one gaseous precursor into the recipient, and at least one activation device which contains at least one heatable activation element, the end thereof being secured to a securing point on a support element. A shielding element which can protect at least the securing point at least partially against the effect of the gaseous precursor is provided. The shielding element has a longitudinal extension having a first side and a second side, the first side being arranged on the support element and a locking element being arranged on the second side of the shielding element, the locking element having at least one outlet. At least one separation wall is arranged inside the shielding element, the wall separating the inner volume of the shielding element into a first partial volume and into a second partial volume.

Abstract: The present invention relates to pigments with improved and adjustable sparkling effect comprising A) a plate-like substrate of perlite coated with (a) dielectric material, and/or metal; and B) a plate-like substrate of mica, coated with (a) dielectric material, and/or a metal; and a process for their production and their use in paints, ink jet printing, for dyeing textiles, for pigmenting coatings (paints), printing inks, plastics, cosmetics, glazes for ceramics and glass. The pigments show an improved sparkle effect; in particular an attractive high sparkle intensity.

Abstract: Systems and methods of reducing outgassing of a substance within a reaction chamber of a reactor are disclosed. Exemplary methods include depositing a barrier layer within the reaction chamber and using a scavenging precursor to react with species on a surface of the reaction chamber. Exemplary systems include gas-phase deposition systems, such as atomic layer deposition systems, which include a barrier layer source and/or a scavenging precursor source fluidly coupled to a reaction chamber of the system.

Abstract: The present invention relates generally to methods for producing a coated jewelry article or a coated component of a jewelry article, comprising a jewelry article or a component of a jewelry article, a first metallic coating, and a second metallic coating.

Abstract: Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (Tgr) of the processing chamber for the step.

Abstract: Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted ?3-allyl)(carbonyl)metal complexes.

Abstract: A method of producing a patterned inorganic thin film dielectric stack includes providing a substrate. A first patterned deposition inhibiting material layer is provided on the substrate. A first inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the first deposition inhibiting material layer is not present using an atomic layer deposition process. The first deposition inhibiting and first inorganic thin film dielectric material layers are simultaneously treated after deposition of the first inorganic thin film dielectric material layer. A second patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the second deposition inhibiting material layer is not present using an atomic layer deposition process.

Abstract: There is provided a method for forming a Ge—Sb—Te film having a composition of Ge2Sb2Te5 on a substrate by a CVD method using a gaseous Ge source material, a gaseous Sb source material and a gaseous Te source material. The method includes loading the substrate within a processing chamber (Process 1); performing a first stage film forming process on the substrate by supplying the gaseous Ge source material and the gaseous Sb source material (Process 2); and performing a second stage film forming process on a film obtained through the first stage film forming process by supplying the gaseous Sb source material and the gaseous Te source material (Process 3). The Ge—Sb—Te film is formed by the film obtained through Process 2 and by a film obtained through Process 3.

Abstract: Some embodiments described herein relate to a substrate with a surface comprising a silane or a silane derivative covalently attached to optionally substituted cycloalkene or optionally substituted heterocycloalkene for direct conjugation with a functionalized molecule of interest, such as a polymer, a hydrogel, an amino acid, a nucleoside, a nucleotide, a peptide, a polynucleotide, or a protein. In some embodiments, the silane or silane derivative contains optionally substituted norbornene or norbornene derivatives. Method for preparing a functionalized surface and the use in DNA sequencing and other diagnostic applications are also disclosed.

Abstract: A nozzle and nozzle head arranged to subject a surface of a substrate to gaseous precursors. The nozzle includes an output face via which the precursor is supplied, a longitudinal precursor supply element for supplying precursor and a longitudinal discharge channel open to and along the output face for discharging at least a fraction of the precursor supplied from the precursor channel. The precursor supply element is arranged to extend inside the discharge channel such that the precursor supply element divides the discharge channel in the longitudinal direction to a first discharge sub-channel and a second discharge sub-channel on opposite sides of the precursor supply element for supplying precursor through the discharge channel.

Abstract: A vapor phase growth method is disclosed. The method includes a step of preparing a substrate in a chamber, a first step of adsorbing only a first element to the substrate by supplying a first source material into the chamber, a second step of stopping supply of the first source material into the chamber, a third step of adsorbing only a second element to the substrate by supplying a second source material into the chamber, wherein the supply of the second source material is started while the first source material remains in an atmosphere of the chamber, a fourth step of stopping supply of the first source material into the chamber, and a fifth step of repeating from the first step to the fourth step.

Abstract: The present invention relates to a film formation apparatus for forming thin films having high gas barrier performance, such as a DLC (Diamond Like Carbon) film, SiOx film, SiOC film, SiOCN film, SiNx film, and AIOx film, on the inner surface and/or outer surface of containers such as PET bottles. The film formation apparatus is provided with: a vacuum chamber for forming, in a vacuum state, a film on a surface of a container (4) using a heat generating element (21); a vacuum evacuation device for vacuumizing the vacuum chamber; and a relative shifting device for relatively shifting the container (4) and the heat generating element (21) in the vacuum chamber after starting vacuumization of the vacuum chamber.

Abstract: A coated article and a chemical vapor deposition process are disclosed. The coated article includes a functionalized layer applied to the coated article by chemical vapor deposition. The functionalized layer is a layer selected from the group consisting of an oxidized-then-functionalized layer, an organofluoro treated layer, a fluorosilane treated layer, a trimethylsilane treated surface, an organofluorotrialkoxysilanes treated layer, an organofluorosilylhydrides-treated layer, an organofluoro silyl treated layer, a tridecafluoro 1,1,2,2-tetrahydrooctylsilane treated layer, an organofluoro alcohol treated layer, a pentafluoropropanol treated layer, an allylheptafluoroisopropyl ether treated layer, a (perfluorobutyl) ethylene treated layer, a (perfluorooctyl) ethylene treated layer, and combinations thereof. The process includes applying the functionalized layer.

Abstract: Ceramic matrix composite materials and a process for making said composite materials are disclosed.

Abstract: A film forming apparatus includes a first supply unit configured to supply a first reaction gas into the reaction vessel under an environment of a first pressure, a second supply unit configured to supply a second reaction gas into the reaction vessel under an environment of a second pressure lower than the first pressure, a first vacuum exhaust mechanism connected to the reaction vessel through a first exhaust path in order to create the environment of the first pressure within the reaction vessel, a second vacuum exhaust mechanism connected to the reaction vessel through a second exhaust path in order to create the environment of the second pressure, the second vacuum exhaust mechanism being lower in an operation pressure zone than the first vacuum exhaust mechanism, and a switching unit configured to switch exhaust destinations of the reaction vessel between the first path and the second path.

Abstract: The present invention relates to a method for manufacturing polysilicon. According to the present invention, meltdown can be prevented during the growth of silicon rod, and a polycrystalline silicon rod having a larger diameter can be shortly manufactured with a minimal consumption of energy.

Abstract: Methods and systems for coating articles are described herein. The methods and systems described herein include, but are not limited to, steps for actively or passively controlling the temperature during the coating process, steps for providing intimate contact between the substrate and the support holding the substrate in order to maximize energy transfer, and/or steps for preparing gradient coatings. Methods for depositing high molecular weight polymeric coatings, end-capped polymer coatings, coatings covalently bonded to the substrate or one another, metallic coatings, and/or multilayer coatings are also disclosed. Deposition of coatings can be accelerated and/or improved by applying an electrical potential and/or through the use of inert gases.

Abstract: This disclosure provides systems, methods and apparatus for processing multiple substrates in a processing tool. An apparatus for processing substrates can include a process chamber, a common reactant source, and a common exhaust pump. The process chamber can be configured to process multiple substrates. The process chamber can include a plurality of stacked individual subchambers. Each subchamber can be configured to process one substrate. The common reactant source can be configured to provide reactant to each of the subchambers in parallel. The common exhaust pump can be connected to each of the subchambers.

Abstract: A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into a rotating-disc reactor and directed downwardly onto a wafer carrier and substrates which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-250° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

Abstract: To provide a method of manufacturing a semiconductor device, including: forming a thin film different from a silicon oxide film on a substrate by supplying a processing gas into a processing vessel in which the substrate is housed; removing a deposit including the thin film adhered to an inside of the processing vessel by supplying a fluorine-containing gas into the processing vessel after executing forming the thin film prescribed number of times; and forming a silicon oxide film having a prescribed film thickness on the inside of the processing vessel by alternately supplying a silicon-containing gas, and an oxygen-containing gas and a hydrogen-containing gas into the heated processing vessel in which a pressure is set to be less than an atmospheric pressure after removing the deposit.

Abstract: A deposition device includes a deposition source for discharging a deposition material to be deposited on a substrate, an angle control member at least partly in a discharging path of the deposition material for controlling a discharging angle of the deposition material, and an angle control member driver coupled to the angle control member, the angle control member driver for moving the angle control member in a discharging direction of the deposition material to control the discharging angle.

Abstract: In the method, silver is protected against tarnishing using an Atomic Layer Deposition method. In the Atomic Layer Deposition method, a thin film coating is formed on the surface of silver by depositing successive molecule layers of the coating material. For example aluminium oxide (Al2O3) or zirconium oxide may be used as the coating material.

Abstract: Embodiments herein relate to a heat sink having nano- and/or micro-replication directly embossed in a bulk solidifying amorphous alloy comprising a metal alloy, wherein the heat sink is configured to transfer heat out of the heat sink by natural convection by air or forced convection by air, or by fluid phase change of a fluid and/or liquid cooling by a liquid. Other embodiments relate apparatus having the heat sink. Yet other embodiments relate to methods of manufacturing the heat sink and apparatus having the heat sink.

Abstract: Disclosed herein is a method for producing a plastic container coated with a thin film that is excellent in gas barrier properties, film coloration and film adhesiveness without using an external electrode having a special shape while suppressing deposition of foreign matters such as carbon powders.

Abstract: The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material before the start of the film formation. Used is a film forming apparatus including: an evaporation chamber 16; a film forming chamber 17 in which a substrate 21 is provided; an evaporation source 19 holding a film formation material 15 and including an opening surface 14; a moving mechanism 35 configured to cause the evaporation source 19 to move; and a conductance variable structure 34. The film forming chamber 17 and the evaporation chamber 16 are evacuated. In a state where the differential pressure between these chambers can be secured by the conductance variable structure 34, the nonreactive gas is introduced to the evaporation chamber 16 to adjust the pressure in the evaporation chamber 16 to predetermined pressure or more.