Bipolar Transistor Structure Patents (Class 257/565)
- With separate emitter areas connected in parallel (Class 257/579)
- With current ballasting means (e.g., emitter ballasting resistors or base current ballasting resistors) (Class 257/582)
- With means to reduce transistor action in selected portions of transistor (e.g., heavy base region doping under central web of emitter to prevent secondary breakdown) (Class 257/583)
- With housing or contact (i.e., electrode) means (Class 257/584)