Transistor-type Device (i.e., Able To Continuously Respond To Applied Control Signal) Patents (Class 257/E29.173)
E Subclasses
- Structurally associated with other devices (EPO) (Class 257/E29.175)
- Device being resistive element (e.g., ballasting resistor) (EPO) (Class 257/E29.176)
- Point contact transistors (EPO) (Class 257/E29.177)
- Schottky transistors (EPO) (Class 257/E29.178)
- Tunnel transistors (EPO) (Class 257/E29.179)
- Avalanche transistors (EPO) (Class 257/E29.18)
- Transistors with hook collector (i.e., collector having two layers of opposite conductivity type (e.g., SCR)) (EPO) (Class 257/E29.181)
- Bipolar thin-film transistors (EPO) (Class 257/E29.182)
- Vertical transistor (EPO) (Class 257/E29.183)
- Lateral transistor (EPO) (Class 257/E29.187)
- Hetero-junction transistor (EPO) (Class 257/E29.188)
- Vertical transistors (EPO) (Class 257/E29.189)
- Having two-dimensional base (e.g., modulation-doped base, inversion layer base, delta-doped base) (EPO) (Class 257/E29.19)
- Having emitter comprising one or more nonmonocrystalline elements of Group IV (e.g., amorphous silicon) alloys comprising Group IV elements (EPO) (Class 257/E29.191)
- Resonant tunneling transistors (EPO) (Class 257/E29.192)
- Comprising lattice mismatched active layers (e.g., SiGe strained layer transistors) (EPO) (Class 257/E29.193)
- Gated diode structure (EPO) (Class 257/E29.195)
- Insulated gate bipolar mode transistor (e.g., IGBT; IGT; COMFET) (EPO) (Class 257/E29.197)
- Transistor with vertical current flow (EPO) (Class 257/E29.198)
- With both emitter and collector contacts in same substrate side (EPO) (Class 257/E29.199)
- With nonplanar surface (e.g., with nonplanar gate or with trench or recess or pillar in surface of emitter, base, or collector region for improving current density or short-circuiting emitter and base regions) (EPO) (Class 257/E29.2)
- Thin-film device (EPO) (Class 257/E29.202)