Abstract: A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum efficiency.

Abstract: A semiconductor light emitting apparatus for emitting a desired colored light by coating the top surface thereof with a wavelength conversion member prevents the color unevenness from occurring due to the unevenness of the coating thickness of the wavelength conversion member. The semiconductor light emitting apparatus can include a semiconductor layer having a light emitting layer with a light emitting surface having at least one corner area, a supporting substrate configured to support the semiconductor layer, and a wavelength conversion material layer formed on top of the semiconductor layer, the wavelength conversion layer having a thickness thinner from a center portion of the semiconductor layer to an outer peripheral portion. The at least one corner area can include a non-emitting portion where light cannot be projected. The non-emitting portion can be a light shielding portion, a non-light emission portion or a current confined portion.

Abstract: Embodiments of the invention include methods and devices for producing light by injecting electrons from field emission cathode across a gap into nanostructured semiconductor materials, electrons issue from a separate field emitter cathode and are accelerated by a voltage across a gap towards the surface of the nanostructured material that forms part of the anode. At the nanostructure material, the electrons undergo electron-hole (e-h) recombination resulting in electroluminescent (EL) emission. In a preferred embodiment lighting device, a vacuum enclosure houses a field emitter cathode. The vacuum enclosure also houses an anode that is separated by a gap from said cathode and disposed to receive electrons emitted from the cathode. The anode includes semiconductor light emitting nano structures that accept injection of electrons from the cathode and generate photons in response to the injection of electrons.

Abstract: There is provided a process for forming a layer of electroactive material. The process includes: depositing a liquid composition containing an electroactive material and at least one solvent onto a workpiece to form a wet layer; placing the wet layer on the workpiece into a vacuum chamber containing solid absorptive material; and treating the wet layer at a controlled temperature in the range of ?25° C. to 80° C. and under an applied vacuum in the range of 10?6 Torr to 1,000 Torr for a period of 1-100 minutes.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.

Abstract: A circuit structure of a package carrier including a plurality of chip pads, a first electrode, a second electrode, a third electrode and a fourth electrode is provided. These chip pads are arranged in an M×N array. A first bonding pad, a second bonding pad, a third bonding pad and a fourth bonding pad are disposed clockwise in the peripheral area of each chip pad in sequence. The orientations of each of the first, second, third, and fourth bonding pads of the (S?1)th row rotated by 90 degrees are equal to the orientations of each of the first, second, third and fourth bonding pads of the Sth row, respectively. The first electrode is connected with each first bonding pad. The second electrode is connected with each second bonding pad. The third electrode is connected with each third bonding pad. The fourth electrode is connected with each fourth bonding pad.

Abstract: A compound semiconductor device includes: an Au alloy electrode, an interlayer insulating film, a metal interconnection, and an oxide film. The Au alloy electrode is formed on a compound semiconductor. The interlayer insulating film is formed on the Au alloy electrode. The metal interconnection is connected to the Au alloy electrode via a contact hole formed in the interlayer insulating film. The oxide film is formed at an interface between the Au alloy electrode and the interlayer insulating film, dominating component of the oxide film is a constituent element of the compound semiconductor.

Abstract: A thin film transistor array panel comprises a plurality of gate lines formed on an insulating substrate; a repair line formed on the insulating substrate; a gate insulating layer formed on the gate lines and the repair line; a plurality of data lines formed on the gate insulating layer; an electricity dissipation line formed on the gate insulating layer crossing the gate lines and the repair line; and a first diode connecting the repair line and the electricity dissipation line. When static electricity is introduced through the repair lines, the static electricity is transferred to the electricity dissipation line and is dispersed or exhausted before it reaches to the data lines. As a result, the TFTs and wires in the display area are prevented from being destroyed by the static electricity.

Abstract: Provided is a light-emitting apparatus which can prevent a shadow mask from contacting a light-emitting medium to suppress damage of the medium, by using a conductive layer formed on a device isolation layer as a pressing member for the shadow mask, and can attain more secure conduction between a second electrode and an auxiliary electrode.

Abstract: Light emitting devices, and related components, processes, systems and methods are disclosed.

Abstract: A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm?2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.

Abstract: A thin-film plasmonic device including a layer of a conductive material positioned over an array of electrodes of alternating polarity.

Abstract: A method of fabricating an optical transformer is provided. A substrate is provided first, wherein the substrate includes a first region and a second region. Then a first material layer is formed on the substrate, and the portion of the first material layer other than in the first region is removed. Then a second material layer is formed on the substrate, and the portion of the second material in the first region and the second region is removed. Lastly, a first conductive layer is formed on the substrate and the portion of the first conductive layer other than in the second region is removed to make the first material layer, the second material layer and the first conductive layer have the same height such that the first material layer becomes a part of the optical transformer.

Abstract: A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Abstract: A method and device for generating terahertz radiation comprising a substrate; a plurality of segments of polar crystal material formed on the substrate, the segments having an internal electric polarization; each segment comprising at least two edges oriented substantially perpendicular to the polar axis such that the electric polarization terminates at the edges and the segment comprises a majority of positive charges on one edge and a majority of negative charges on the opposite edge thereby leading to creation of an internal electric field; whereby when irradiated by a pulsed source of duration less than one picosecond, electron-hole pairs are generated within the segments and the internal electric field separates and accelerates the electron-hole pairs to thereby produce terahertz radiation.

Abstract: There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards. When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.

Abstract: A display device includes an array of light emitting cells. Banks define each of the light emitting cells. The light emitting cells include a first light emitting cell that is located in a central region of the array and a second light emitting cell that is located in a peripheral region of the array. First and third banks border the first light emitting cell with the first bank being closer to a periphery of the array than the second bank. Second and fourth banks border the second light emitting cell with the third bank being closer to the periphery of the array than the fourth bank. An inclination angle of an innermost sidewall of the third bank that is adjacent the second light emitting cell is different than an inclination angle of an innermost sidewall of the first bank that is adjacent the first light emitting cell.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a first electrode layer under the second conductive semiconductor layer; an electrode including a top surface making contact with a part of a bottom surface of the first conductive semiconductor layer; and an insulating member for covering an outer peripheral surface of the electrode, wherein a part of the insulating member extends into a region between the second conductive semiconductor layer and the first electrode layer from a bottom surface of the electrode.

Abstract: A method is described for manufacturing a semiconductor device that comprises the steps of providing on a substrate a layer of a conducting material in a pattern comprising isolated elements having a first set of edges. The method further includes providing, on the substrate, a series of wall structures for forming one or more cavities there between. The wall structures have a second set of edges cooperating with the first set of edges. The second set of edges is positioned outside the first set of edges by a pre-defined distance. The method furthermore includes depositing a liquid material in the cavities. A display and an electronic apparatus incorporating the above described features is also disclosed.

Abstract: Proposed is an epitaxial substrate, particularly for making thin-film semiconductor chips based on III-V semiconductors, comprising a sacrificial layer that is applied to a wafer substrate and whose band gap is smaller than the band gap of the surrounding substrate, and a method of making the epitaxial substrate. Further described is a method of making a thin-film semiconductor chip, particularly an LED, wherein an epitaxial substrate is prepared, wherein at least one LED structure is grown on said epitaxial substrate and the LED structure is bonded to an acceptor substrate, and wherein the semiconductor wafer is released by at least partially destroying the sacrificial layer, and the at least one LED structure is singulated.

Abstract: This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by AlxGayInzN in which each of X, Y and Z indicates a rational number satisfying a relationship of X+Y+Z=1.0, even if Al content is as high as 1.0>X?0.5. It is achieved that a proportion of a hole concentration at 30° C. to an acceptor impurity atom concentration is 0.001 or more in the p-type group III nitride semiconductor of the invention, by doping acceptor impurity atoms such as Mg in concentration of 5×1018 to 1×1020 cm?3 using the method, for example, MOCVD with attention not to incorporate an impurity atom other than the acceptor impurity atom or not to form dislocation in the crystal when producing the group III nitride semiconductor expressed by the above composition.

Abstract: A thin film transistor (TFT) and an organic light emitting display apparatus are provided. The TFT includes: a substrate; a gate electrode on the substrate; an active layer insulated from the gate electrode; source/drain electrodes electrically connected to the active layer; a first insulating film on the source/drain electrodes; a light blocking layer on the first insulating film; and a second insulating film on the light blocking layer.

Abstract: A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.

Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

Abstract: A Group III nitride semiconductor device of the present invention is obtained by laminating at least a buffer layer (12) made of a Group III nitride compound on a substrate (11), wherein the buffer layer (12) is made of AlN, and a lattice constant of a-axis of the buffer layer (12) is smaller than a lattice constant of a-axis of AlN in a bulk state.

Abstract: An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction.

Abstract: A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.

Abstract: A light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a refractive layer on the active layer, and a second conductive semiconductor layer on the refractive layer.

Abstract: A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.

Abstract: A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.

Abstract: A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and light transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.

Abstract: A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm?2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.

Abstract: A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield.

Abstract: A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield.

Abstract: A semiconductor device (10) includes a support substrate (14), an adhered device part (11) adhered to the support substrate (14), a multilayer device part (13) stacked on the adhered device part (11), and an adjacent device part (12) formed in a region adjacent to the adhered device part on the support substrate (14). The adhered device part (11), the multilayer device part (13), and the adjacent device part (12) are electrically connected to one another.

Abstract: A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an emitter contact coupled with the second tunnel junction, and a base contact coupled with the base; whereby, signals applied with respect to the collector, base, and emitter contacts causes light emission from the base by radiative recombination in the base.

Abstract: A pixel structure is disposed on a substrate and includes a gate, a gate insulating layer, a patterned metal-oxide layer, an etching stop layer, a source, and a drain. The gate is disposed on the substrate. The gate insulating layer is disposed on the substrate to cover the gate. The patterned metal-oxide layer is disposed on the gate insulating layer and includes an active layer located above the gate and a pixel electrode. The etching stop layer is disposed on a portion of the active layer. Conductivity of a portion of the patterned metal-oxide layer uncovered by the etching stop layer is greater than conductivity of a portion of the patterned metal-oxide layer covered by the etching stop layer. The source and the drain are electrically connected to a portion of the active layer uncovered by the etching stop layer. The drain is electrically connected to the pixel electrode.

Abstract: Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable.

Abstract: A thin-film LED includes an insulating substrate, an electrode on the insulating substrate, and an epitaxial structure on the electrode.

Abstract: A white organic light-emitting device is provided by the present invention. The white organic light-emitting device includes an anode, a hole transport layer, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, an electron transport layer and a cathode, wherein the second light-emitting layer is formed between the first and the third light-emitting layers, the emission wavelength of the second light-emitting layer is longer than that of the first and third light-emitting layers, and the host material of the first and third light-emitting layer are different. The white organic light-emitting device of the present invention is capable of effectively increasing the luminous efficiency, reducing operating voltage, and providing color stability.

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract: A light emission device and a display device including the same. The light emission device includes: a substrate body having a concave portion recessed into the substrate body and extending along a first direction; a first electrode in the concave portion and extending along the first direction; a second electrode on a front surface of the substrate body and extending along a second direction crossing the first electrode; an anti-conduction electrode disposed at an edge portion of the substrate body and extending along the second direction to be parallel with the second electrode; and an electron emission unit on the first electrode and spaced apart from the second electrode. Here, each of the second electrode and the anti-conduction electrode includes: a mesh unit having a plurality of opening portions; and a support unit joined to the substrate body while surrounding the mesh unit.

Abstract: Provided are a nitride semiconductor light emitting element, including an n-type nitride semiconductor substrate including a dislocation bundle concentration region, and a nitride semiconductor stacked body having an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer in this order on the n-type nitride semiconductor substrate, the nitride semiconductor light emitting element having a dielectric region in a region of the nitride semiconductor stacked body corresponding to the dislocation bundle concentration region, an electrode for p-type provided to be in contact with a portion of the p-type nitride semiconductor layer and a portion of the dielectric region, and an electrode for n-type provided on a side of the n-type nitride semiconductor substrate opposite to a side on which the nitride semiconductor stacked body is provided, and a manufacturing method thereof.

Abstract: A light emitting element of the present invention includes an electrode substrate; a thin-film electrode; and an electron acceleration layer sandwiched between the electrode substrate and the thin-film electrode. In the electron acceleration layer, as a result of a voltage applied between the electrode substrate and the thin-film electrode, electrons are accelerated so as to be turned into hot electrons. The hot electrons excite surfaces of the silicon fine particles contained in the electron acceleration layer so that the surfaces of the silicon fine particles emit light. Such a light emitting element of the present invention is a novel light emitting element, which has not been achieved by the conventional techniques. That is, the light emitting element of the present invention is able to (i) be produced by using a silicon material, which is available at low price, through a simple production method, and (ii) efficiently emit light.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system including the light emitting device and the light emitting device package. The light emitting device includes a light emitting structure, a dielectric, a second electrode layer, a semiconductor region, and a first electrode. The light emitting device includes a plurality of semiconductor layers that form a heterojunction that produces light and a homojunction that protects the device from a reverse current.

Abstract: A semiconductor light emitting diode (1, LED), comprising a first and a second electrode (40, 11) for applying a voltage across an active region (4) for generation of light, a light emitting surface (6), and a plurality of photonic crystals (101, 102). Further, at least two photonic crystals (101, 102) of a first and a second type are adapted to extract light from the active region (4) and differ from each other with respect to at least one lattice parameter. Each of said at least two photonic crystals (101, 102) are associated with a respective far field pattern, wherein an arrangement of said plurality of photonic crystals (101, 102) is provided to arrange said at least two photonic crystals (101, 102). In this manner, a far field pattern is created by combining the respective far field patterns associated with each of said at least two photonic crystals (101, 102).

Abstract: There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof.

Abstract: An integrated circuit including ESD device is disclosed. One embodiment includes a semiconductor region being electrically isolated from adjacent semiconductor regions by an isolating region. Both an ESD device and a device configured to emit radiation are formed within the semiconductor region.

Abstract: The present invention provides a semiconductor light emitting device and a method for manufacturing the same. The semiconductor device comprises (i) a semiconductor layer with convex portions in a shape selected from a cone and a truncated cone and (ii) electrodes, wherein in the case of the convex portions with the shape of the truncated cone, the convex portions has a height of from 0.05 to 5.0 ?m and a bottom base diameter of from 0.05 to 2.0 ?m; in case of the convex portions with the shape of the cone, the convex portions has a height of from 0.05 to 5.0 ?m and a base diameter of from 0.05 to 2.0 ?m. A method for manufacturing a semiconductor light emitting device comprising the steps of (a) growing a semiconductor layer on a substrate, (b) forming on the semiconductor layer a region having particles with an average particle diameter of 0.