Abstract: An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.

Abstract: It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.

Abstract: An organic light-emitting substrate includes a base substrate, a gate line, a data line, a bias line, an organic light-emitting diode, a switching transistor, a driving transistor and a repair line. The bias line is spaced apart from the gate line and the data line. The organic light-emitting diode includes a pixel electrode, a common electrode and an organic light-emitting part. The switching transistor is connected to the gate line and the data line. The driving transistor is connected to the bias line, the pixel electrode and the switching transistor. The repair line is formed from a pixel metal layer that is identical to the pixel electrode to be spaced apart from the pixel electrode, and is formed along the first direction to be overlapped with the gate line. Therefore, the repair line may repair electric defects of the gate line.

Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

Abstract: Provided is a white LED including a substrate having a reflecting body provided thereon; an LED chip mounted on the substrate; a fluorescence reflecting layer formed on the LED chip; and a phosphor layer formed on the fluorescence reflecting layer and having a higher refractive index than the fluorescence reflecting layer.

Abstract: Disclosed are a light emitting apparatus and a display apparatus having the same. The light emitting apparatus comprises a first light emitting device which emits a light of a target color tinged with a first color, and a second light emitting device which emits a light of the target color tinged with a second color complementary to the first color with respect to the target color.

Abstract: A light source module includes a circuit board on which a circuit pattern is formed; a semiconductor light emitting element; an electrode pad; and a connecting body. The semiconductor light emitting element includes a first surface formed into an oblong shape, and a second surface positioned facing opposite the first surface. The second surface is connected with a second part of the circuit pattern. The electrode pad is provided on the first surface of the semiconductor light emitting element and includes a connecting portion. The connecting body is connected with the connecting portion of the electrode pad and a first part of the circuit pattern. The electrode pad is provided on a portion of the semiconductor light emitting element that includes one end portion of the first surface. The connecting portion of the electrode pad is provided at a position in one of a continuous and spaced manner in the lengthwise direction of the electrode pad.

Abstract: To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.

Abstract: The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided.

Abstract: A thin film transistor array panel is provided, which includes a substrate, a plurality of gate line formed on the substrate, a plurality of common electrodes having a transparent conductive layer on the substrate, a gate insulating layer covering the gate lines and the common electrodes, a plurality of semiconductor layers formed on the gate insulating layer, a plurality of data lines including a plurality of source electrodes and formed on the semiconductor layer and the gate insulating layer, a plurality of drain electrodes formed on the semiconductor layer and the gate insulating layer, and a plurality of pixel electrodes overlapping the common electrodes and connected to the drain electrodes.

Abstract: There is provided a mounting structure in which a component is mounted on a substrate. In the mounting structure, substrate-side first wirings, substrate-side first terminals formed in a mounting area where the component is mounted on the substrate, substrate-side second terminals formed in the mounting area and substrate-side second wirings are disposed over the substrate. Component-side first terminals and component-side second terminals are provided to the component. The substrate-side first wirings and the substrate-side second wirings extend in a first direction. The substrate-side first terminals are connected to corresponding substrate-side first wirings, and the substrate-side second terminals are connected to corresponding substrate-side second wirings. The substrate-side second wirings pass between corresponding adjacent two substrate-side first wirings and between corresponding adjacent two substrate-side first terminals.

Abstract: A thin film transistor (TFT) substrate, a display device having the same, and a method for manufacturing the same are disclosed. The TFT substrate includes: a substrate; a TFT formed on the substrate, the TFT including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode; and a light blocking film formed on the TFT and overlapping with the semiconductor layer.

Abstract: The invention is an organic luminescence transistor device including: a substrate; a first electrode layer provided on a side of an upper surface of the substrate; a layered structure provided locally on a side of an upper surface of the first electrode layer, the layered structure covering an area of a predetermined size in a plan view, the layered structure including an insulation layer, an assistance electrode layer and an electric-charge-injection inhibiting layer in this order; an organic EL layer provided on the side of an upper surface of the first electrode layer at least at an area not provided with the layered structure; and a second electrode layer provided on a side of an upper surface of the organic EL layer.

Abstract: A light emitting diode (LED) lighting module with an improved heat dissipative structure comprises a plurality of the LEDs and a heat pipe apparatus on which at least a circuit layer is provided. The circuit layer is directly formed on an electrical insulation layer with superior heat conductivity on a surface of the heat pipe apparatus. The LEDs are electrically connected to the circuit layer. Furthermore, the heat pipe apparatus can be a flat heat pipe or the combination of plate-shaped heat pipes, heat sinks and a fan. Because the LEDs are directly mounted on the surface of the heat pipe apparatus, the heat generated by the lighting LEDs is effectively delivered to the atmosphere due to the reaction of latent heat phase transformation in the heat pipe apparatus. Moreover, the heat is delivered to the heat sinks at far sides for heat exchange so that improved heat dissipation and a space saving result are achieved.

Abstract: A structure of light-emitting diode (LED) dies having an AC loop (a structure of AC LED dies), which is formed with at least one unit of AC LED micro-dies disposed on a chip. The unit of AC LED micro-dies comprises two LED micro-dies arranged in mutually reverse orientations and connected with each other in parallel, to which an AC power supply may be applied so that the LED unit may continuously emit light in response to a positive-half wave voltage and a negative-half wave voltage in the AC power supply. Since each AC LED micro-die is operated forwardly, the structure of AC LED dies also provides protection from electrical static charge (ESD) and may operate under a high voltage.

Abstract: A thin-type light emitting diode lamp includes a blue light emitting diode chip (6) disposed at a substantial center of an inner bottom surface of a groove-shaped recess (3) formed at an end surface and having a thin elongated rectangular opening, a red light conversion layer (7) covering the blue light emitting diode chip (6) and made of a light-transmitting synthetic resin containing powder of a red fluorescent material which emits red light when excited by blue light emitted from the blue light emitting diode chip, and a green light conversion layer (10) made of a light-transmitting synthetic resin containing powder of a green fluorescent material which emits green light when excited by the blue light. The light emitting diode lamp further includes a light transmitting layer (9) intervening between the red light conversion layer (7) and the green light conversion layer (10).

Abstract: There is provided a nitride semiconductor light emitting device in which a semiconductor layer is not broken easily even when a reverse voltage is applied or even in long time operation, and excellent reliability is obtained, by preventing semiconductor layers from deterioration when manufacturing a device. On a surface of a substrate (1), a semiconductor lamination portion (6) made of nitride semiconductor, including a first conductivity type layer (p-type layer (5)) and a second conductivity type layer (n-type layer (3)), is formed, a p-side electrode (8) is provided through a light transmitting conductive layer (7) thereon electrically connected to the p-type layer (5), and an n-side electrode (9) is provided electrically connected to the n-type layer (3) of the lower layer side of the semiconductor lamination portion(6).

Abstract: A thin film transistor (TFT) array having test circuitry includes a thin film transistor array body having a plurality of pixels. Test circuitry is integrally formed with the body. The test circuitry includes a power supply for supplying power via the test circuitry to the body; and a plurality of wireless switches to activate selected pixels.

Abstract: An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.

Abstract: A transistor array substrate includes a plurality of driving transistors which are arrayed in a matrix on a substrate. The driving transistor has a gate, a source, a drain, and a gate insulating film inserted between the gate, and the source and drain. A plurality of signal lines are patterned together with the gates of the driving transistors and arrayed to run in a predetermined direction on the substrate. A plurality of supply lines are patterned together with the sources and drains of the driving transistors and arrayed to cross the signal lines via the gate insulating film. The supply line is electrically connected to one of the source and the drain of the driving transistor. A plurality of feed interconnections are formed on the supply lines along the supply lines, respectively.

Abstract: A wavelength conversion member provided with a composite phosphor obtained by coating surfaces of phosphor particles with coating material particles and has an average particle diameter of the coating material of not more than 1/10 of an average particle diameter of the phosphor particles, and a light emitting device using the same. It is possible to control dispersibility of the phosphor particles in the wavelength conversion member, and it is possible to provide a light emitting device free from color variability and having good light emission efficiency by combining the wavelength conversion member with a semiconductor light emitting element.

Abstract: While suppressing the frequency of a signal line driver circuit, a blur of a moving image of a light-emitting device using a light-emitting transistor can be prevented, without reducing a frame frequency. A switching element is provided in a path of a current which flows between a source and a drain of a light-emitting transistor, and the light-emitting transistor is made not to emit light by turning off the switching element, whereby pseudo-impulse driving is performed. Switching of the switching element can be controlled by a scan line driver circuit. In a specific structural example, the light-emitting device includes, in a pixel, a light-emitting transistor, a first switching element which controls supply of a potential of a video signal to a gate of the light-emitting transistor, and a second switching element which controls a current which flows between a source and a drain of the light-emitting transistor.

Abstract: In a light-emitting device and its manufacturing method, mounting by batch process with surface-mount technology, high light extraction efficiency, and low manufacturing cost are realized. The light-emitting device comprises semiconductor layers of p-type and n-type nitride semiconductor, semiconductor-surface-electrodes to apply currents into each of the semiconductor layers, an insulating layer which holds the semiconductor layers, and mount-surface-electrodes. The semiconductor layers has a non-deposited area where the other semiconductor layer is not deposited. The insulating layer has VIA which electrically connect the mount-surface-electrodes and the semiconductor-surface-electrodes.

Abstract: A light emitting device with magnetic field includes a light emitting device, a thermal conductive material layer and a magnetic layer. The thermal conductive material layer is coupled with the light emitting device to dissipate heat generated by the light emitting device. The magnetic layer is coupled with thermal conductive material layer to produce a magnetic filed on the light emitting device.

Abstract: A semiconductor light-emitting device having high reliability is obtained while suppressing separation between a support substrate and a semiconductor element layer. This semiconductor light-emitting device includes a support substrate (1), a first bonding layer (2a) formed on the support substrate (1), a second bonding layer (2b) formed on the first bonding layer (2a), a third bonding layer (2c) formed on the second bonding layer (2b), and a semiconductor element layer (3) formed on the third bonding layer (2c). The melting point of the second bonding layer (2b) is lower than the melting points of the first bonding layer (2a) and the third bonding layer (2c).

Abstract: An electro-optical device includes a substrate that holds an electro-optical material; and a flexible substrate that is connected to the substrate. The flexible substrate has a first connecting portion that is arranged on one surface of the substrate; and a second connecting portion that is arranged on the other surface of the substrate.

Abstract: There are provided a light emitting diode substrate module and a method of manufacturing the same, and a backlight unit and a method of manufacturing the same. A light emitting diode substrate module according to an aspect of the invention includes: a metal plate; an insulating film having a predetermined thickness and provided on an entire outer surface of the metal plate; a reflective film having a predetermined thickness and provided on an entire outer surface of the insulating film; and at least one light emitting diode package electrically connected to a driving circuit provided on the reflective film by pattern printing. Unnecessary material costs can be avoided by forming a predetermined driving circuit by pattern printing, and optical characteristics can be improved by stably maintaining reflection characteristics.

Abstract: A semiconductor device is formed on a low cost substrate 312 onto which is deposited a metal film 314 that serves as an intermediate bonding layer with a transferred film 324 of semiconducting material from a bulk semiconductor substrate 322. The metal film forms an intermetallic compound such as a silicide 316 and functions as a bonding agent between the low cost substrate and the semiconducting substrate, as a back surface field for reflection of minority carriers, and as a textured optical reflector of photons. The silicide also forms a low resistivity back-side ohmic contact with the semiconductor layer. This results in a low cost, flexible, high efficiency, thin film solar cell device.

Abstract: The present invention relates to novel organic electroluminescent compounds exhibiting high luminous efficiency, and organic electroluminescent devices comprising the same.

Abstract: The present disclosure relates to increasing the external efficiency of light emitting diodes, and specifically to increasing the outcoupling of light from an organic light emitting diode utilizing a diffraction grating.

Abstract: In an organic thin film transistor display substrate, a thin film transistor and a pixel electrode electrically connected to the thin film transistor are formed on an array substrate in which a plurality of pixel areas is defined. Also, color filters are formed in the pixel areas. Each color filter is provided with an opening formed therethrough and an active pattern of thin film transistor is received into the opening. Since the active pattern is formed on the array substrate through an inkjet method, the color filter may receive the active pattern therein in lieu of a bank pattern, thereby simplifying the structure of the organic thin film transistor display substrate and improving its productivity.

Abstract: A thin film transistor having excellent electric characteristics, a display device including the thin film transistor, and a manufacturing method thereof are provided. In a thin film transistor in which a microcrystalline germanium film, a gate insulating film in contact with one surface of the microcrystalline germanium film, and a gate electrode overlap with one another and a display device including the thin film transistor, a buffer layer is formed over the other surface of the microcrystalline germanium film. By using a microcrystalline germanium film for a channel formation region, a thin film transistor with high field-effect mobility and high on-current can be manufactured, and by providing a buffer layer between the microcrystalline germanium film functioning as a channel formation region and a source and drain regions, a thin film transistor with low off-current can be manufactured, that is, a thin film transistor with excellent electric characteristics can be manufactured.

Abstract: A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

Abstract: An optoelectronic semiconductor chip is disclosed which emits electromagnetic radiation from its front side (7) during operation, comprising: a semiconductor layer sequence (1) having an active region (4) suitable for generating the electromagnetic radiation, and a self-supporting and electrically conductive mechanical supporting layer (10) formed on the semiconductor layer sequence, which supporting layer mechanically supports the semiconductor layer sequence (1) and is transmissive to radiation of the semiconductor chip.

Abstract: An illumination system, comprising a radiation source and a luminescent material comprising at least one phosphor capable of absorbing a part of the light emitted by the radiation source and emitting light having a wavelength different from that of the absorbed light; wherein said at least one phosphor is a yellow to red-emitting europium(II)-activated ortho-phosphosilicate of general formula EA2-x-yAxPxSi1-xO4:Euy, wherein EA is at least one bivalent metal selected from the group comprising calcium, magnesium, strontium, barium, zinc and manganese, A is at least one monovalent metal chosen from the group of lithium, sodium, potassium, rubidium, cesium, copper and silver, and wherein 0.01?x?1 and 0.0025?y?0.1 can provide light sources having high luminosity and color-rendering index, especially in conjunction with a light emitting diode as a radiation source.

Abstract: There is provided an electric device which can prevent a deterioration in a frequency characteristic due to a large electric power external switch connected to an opposite electrode and can prevent a decrease in the number of gradations. The electric device includes a plurality of source signal lines, a plurality of gate signal lines, a plurality of power source supply lines, a plurality of power source control lines, and a plurality of pixels. Each of the plurality of pixels includes a switching TFT, an EL driving TFT, a power source controlling TFT, and an EL element, and the power source controlling TFT controls a potential difference between a cathode and an anode of the EL element.

Abstract: The present application discloses a light source comprising an LED die having an emitting surface and an optical element including a base, an apex smaller than the base, and a converging side extending between the base and the apex, wherein the base is optically coupled to and is no greater in size than the emitting surface, and wherein the optical element directs light emitted by the LED die to produce a side emitting pattern.

Abstract: An island submount used for carrying at least one light-emitting element having at least one electrical contact. The island submount includes a substrate, at least one island structure having a top surface and an inclined surface, and a conductive layer. The island structure is located on the substrate and corresponds to the electrical contact. The conductive layer is formed on the surface of the island structure and at least covers the top surface, so as to be electrically connected with the electrical contact. The island submount is capable of enhancing the light extraction efficiency of the light-emitting element, and avoids the energy loss due to re-absorption when the light emerging from below the light-emitting element is reflected back to the light-emitting element.

Abstract: Disclosed is a semiconductor micro-emitter array for use in a full-color microdisplay. Each pixel includes three vertically-stacked red, green, and blue micro-emitters which minimizes pixel size. The microdisplay may be exclusively based on Group III-nitride semiconductors, with differing indium concentrations in three respective InGaN/GaN active regions for emitting the three RGB colors. Alternatively the microdisplay may be based on hybrid integration of InGaN based III-nitride semiconductors for blue and green emissions, and AlGaInP based (e.g., Group III-V) semiconductors for red emissions.

Abstract: An organic electroluminescence device and a method for manufacturing the same are disclosed. The organic electroluminescence device includes a transparent substrate, a semiconductor layer including a source region, a channel region and a drain region, a gate insulating film having first contact holes on the source and drain regions and formed on the substrate including the semiconductor layer, a gate electrode formed on the gate insulating film above the channel region, an interlayer insulating film having second contact holes on the source and drain regions and formed on an entire surface of the gate insulating film including the gate electrode, and a source electrode and a drain electrode formed on the interlayer insulating film to be electrically connected to the source and drain regions through the first and second contact holes, wherein at least one of the source electrode and the drain electrode is formed to cover the semiconductor layer.

Abstract: A light emitting device is disclosed herein. An embodiment of the light emitting device comprises a substrate and a reflector extending from the substrate. The reflector forms a cavity in conjunction with the substrate. A light emitter is located in the cavity. At least one first recessed portion is located in the reflector, the at least one first recessed portion extends substantially axially around the reflector.

Abstract: A semiconductor light emitting apparatus can include a housing filled with a wavelength conversion material-containing resin material which seals a semiconductor light emitting device inside the recess of the housing. A transparent resin material can be charged on the wavelength conversion material-containing resin material, and can be configured to prevent the resin materials from being detached from each other or from other portions, such as a housing. Furthermore, such a semiconductor light emitting apparatus can emit light with less color unevenness. The housing can include a first recessed portion and a second recessed portion. The second recessed portion can have a larger diameter than the first recessed portion so as to form a stepped area at the boundary therebetween. The first recessed portion is filled with the wavelength conversion material-containing resin material as a first resin.

Abstract: A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.

Abstract: A method of lifting off includes forming a first material layer on a substrate; forming a photoresist pattern including first and second holes and on the first material layer; patterning the first material layer using the photoresist pattern as a patterning mask to form a material pattern having first and second grooves within the material pattern, the first and second grooves corresponding to the first and second holes, respectively; forming a second material layer on an entire surface of the substrate including the photoresist pattern and the first and second grooves; and removing the photoresist pattern and the second material layer on the photoresist pattern at the same time, wherein a portion of the material pattern between the first and second grooves and portions of the material pattern at sides of the first and second grooves constitute a line as a whole.

Abstract: An object of the invention is to provide a light emitting device in which the variation in emission spectrum depending on an angle for seeing a surface through which light is emitted is reduced. The light emitting device of the invention includes a first insulating layer formed over a substrate, a second insulating layer formed over the first insulating layer, and a semiconductor layer formed over the second insulating layer. A gate insulating layer is formed to cover the second insulating layer and the semiconductor layer. A gate electrode is formed over the gate insulating layer. A first interlayer insulating layer is formed to cover the gate insulating layer and the gate electrode. An opening is formed through the first interlayer insulating layer, the gate insulating layer and the second insulating layer. A second interlayer insulating layer is formed to cover the first insulating layer and the opening. A light emitting element is formed over the opening.

Abstract: An apparatus is provided for modulating the photon output of a plurality of free standing quantum dots. The apparatus comprises a first electron injection layer (210, 310, 410) disposed between a first electrode (212, 312, 412) and a layer (208, 308, 408) of the plurality of free standing quantum dots. A hole transport layer (206, 306, 406) is disposed between the layer (208, 308, 408) of the plurality of quantum dots and a second electrode (204, 304, 404). A light source (224, 324, 424) is disposed so as to apply light to the layer (208, 308, 408) of the plurality of free standing quantum dots. The photon output of the layer (208, 308, 408) of the plurality of free standing quantum dots is modulated by applying a voltage to the first and second electrodes (212, 312, 412, 204, 304, 404).

Abstract: A semiconductor apparatus has a substrate to which is attached a thin semiconductor film including at least one semiconductor device. An interconnecting line links the semiconductor film with electrical circuitry on the substrate. The interconnecting line includes a pad located on the substrate, between the thin semiconductor film and the electrical circuitry. The pad, which is wider than other parts of the interconnecting line, can be used as a probe pad for testing the apparatus, and in particular for testing the electrical circuitry on the substrate before the thin semiconductor film is attached.

Abstract: An optoelectronic component is described, comprising a semiconductor body that emits electromagnetic radiation of a first wavelength when the optoelectronic component is in operation, and a separate optical element disposed spacedly downstream of the semiconductor body in its radiation direction. The optical element comprises at least one first wavelength conversion material that converts radiation of the first wavelength to radiation of a second wavelength different from the first.

Abstract: The present invention relates to a light emitting diode and a method of fabricating the same, wherein the distance between a fluorescent substance and a light emitting diode chip is uniformly maintained to enhance luminous efficiency. To this end, there is provided a light emitting diode comprising at least one light emitting diode chip, lead terminals for use in applying electric power to the light emitting diode chip, and a frame that is used for mounting the light emitting diode chip thereon and is formed to have a predetermined height and a shape corresponding to that of the light emitting diode chip.

Abstract: An LED extractor has an input surface adapted to optically couple to an emitting surface of an LED die, and is composed of a glass (including a glass-ceramic) material whose refractive index is at least 2, or at least 2.2.